CN1327450C - Electronic product with safety device and its using method - Google Patents
Electronic product with safety device and its using method Download PDFInfo
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- CN1327450C CN1327450C CNB021605076A CN02160507A CN1327450C CN 1327450 C CN1327450 C CN 1327450C CN B021605076 A CNB021605076 A CN B021605076A CN 02160507 A CN02160507 A CN 02160507A CN 1327450 C CN1327450 C CN 1327450C
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- programmable read
- safety feature
- erasing
- described safety
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Abstract
The present invention relates to an electronic product with a safety device, and a use method. The electronic product with a safety device is formed by that a transistor of an electronic erasable programmable read only memory (EEPROM) is connected to a receiving device used for receiving out-coming electronic signals, and a conductor wire used for storing a data assembly processing electronic signals, and thus, the drain electrode of the transistor of the EEPROM is electrically coupled to the conductor wire; the gate electrode and the source electrode of the transistor of the EEPROM are electrically coupled to a potential reference point. Before the electronic signals are received, the transistor of the EEPROM is in a non-conducting state in a mode of an ultraviolet erasing program, etc.; after the electronic signals are received, the transistor of the EEPROM is in a programmable conducting state by that a high-voltage signal is input to the conductor wire to ensure that any electronic signal which is subsequently received by a receiving end can not be stored or processed by the data assembly again.
Description
Technical field
The present invention relates to have the safety dress and the method thereof of electronic product, particularly utilize electronics can erase transistorized safety feature of formula programmable read only memory and method thereof.
Background technology
Along with development of semiconductor, increasing electronic product can provide the function of the information of carrying, for example memory card, Smart Card, CompactFlash Card, Memory Module, Smart Media Card, Secure Digital Memory Card and Multi-Media Card or the like.This type electronic product all has receiving end and data assembly basically, receives the extraneous electric signal of being imported (corresponding to the information that will store) and just see through receiving end in manufacture process, and the electric signal that is received with the storage/processing of data assembly.After the electronic product assembling was finished, just there had been this electronic product in information, and the user can see through the interface of electronic product and obtain these information.
Because the data assembly can store/receive the electric signal from receiving end.Therefore, how to avoid Manufactured electronic product in processes such as storage, conveying, sale, use, changed stored information because receiving end receives signal (as noise, upset operation or the like), just become an important problem.
Generally speaking, known technology sees through two kinds of common safety features (security latch) and avoids that store information is affected: mechanical safety device and coding type safety feature.
The notion of mechanical safety device is shown in Figure 1A and Figure 1B, and electronic product 10 has data assembly 11, receiving end 12 and lead 13 at least.At first see through receiving end 13 electric signal is inputed to data assembly 11, and in electric signal input finishing back (being that information has been stored to electronic product 10), just in the package program of electronic product 10, receiving end 12 is separated (being about to receiving end 12 removes from electronic product 10) with lead 13, make data assembly 11 can not receive any electric signal again.Certainly, to determine that lead 13 terminals are by insulation isolation effectively this moment.
The notion of coding type safety feature is shown in Fig. 1 C, and electronic product 10 has data assembly 11, receiving end 12, lead 13 and decoding assembly 14 at least.Any electric signal that comes through lead 13 from receiving end 12 all will just can be transferred to data assembly 11 and store and handle earlier through the processing of decoding assembly 14.Therefore, even if receiving end 12 receives any noise, because 14 of assemblies of decoding can allow the electric signal that meets specific format pass through, data assembly 11 can't be subjected to the influence of noise etc.
The shortcoming of mechanical safety device is: must just data be imported in the mode of electric signal before the package program end, processing procedure elasticity is relatively poor with use elasticity.Can only import predetermined data at manufacturing site location, and can not allow the user import needed personal data.And if encapsulation process is because of factors such as careless mistakes, receiving end do not removed fully and the lead terminal is suitably insulated, and the data assembly still may receive noise etc. again.
The shortcoming of coding type safety feature is: not only electronic product is many coding assembly has increased cost of products and size; And need earlier the digital coding material can be imported, increased fabrication steps and manufacturing cost.
Apparently, various existing use for electronic products safety features all have its shortcoming to be improved separately.Therefore, be necessary to develop new use for electronic products safety feature, particularly can effectively prevent and treat the use for electronic products safety feature of the various shortcomings of existing safety feature.
Summary of the invention
The present invention's one fundamental purpose is the safety feature that proposition can have the use for electronic products of existing machinery formula safety feature and coding type safety feature advantage concurrently.
Another fundamental purpose of the present invention is the safety feature of use for electronic products that proposes effectively to prevent and treat the shortcoming of existing machinery formula safety feature and coding type safety feature.
Of the present invention one big essential characteristic is to utilize the electronics transistorized feature of formula programmable read only memory of can erasing: the electronics of the not on-state formula programmable read only memory transistor of can erasing, if apply enough high-tension electric signal, just can become programmable conducting state in drain electrode.Therefore, be electrically coupled to the lead that connects defeated receiving end and data assembly as if formula programmable read only memory transistor that electronics can be erased, just can see through the voltage of the electric signal that adjusts present lead, change the transmission route of electric signal, and then the data assembly is effectively isolated with extraneous.
The present invention basically, be with an electronics can erase formula programmable read only memory transistor be connected in order to the receiving trap that receives external electric signal with in order to store the lead of the data assembly of handling electric signal, make the electronics electrical lotus root of formula programmable read only memory transistor drain of can erasing be connected to lead, and its gate and source electrode are electrically coupled to the reference point of potential.And before electronic product receives electric signal, make the electronics formula programmable read only memory transistor of can erasing present not on-state in the program of erasing modes such as (as the ultraviolet erasing programs) earlier.But after electric signal receives, just make the electronics formula programmable read only memory transistor of can erasing present programmable conducting state in input high voltage signal to the mode of lead, use and guarantee that any electric signal that receiving end receives subsequently is can be more stored or handle by the data assembly.Certainly, the design of whole electronic product, normally make the electronics of handling conducting state can erase the transistorized resistance value of formula programmable read only memory less than the resistance value between lead and data assembly, use and guarantee to handle the conducting state electronics formula programmable read only memory transistor of can erasing and fully any electric signal that appears at lead all to be transmitted to the reference point of potential, and can not be transferred to the data assembly.
The invention provides a kind of safety feature of electronic product, comprise:
One data assembly is in order to handle most electric signals;
One receiving trap is in order to be received from these electric signals of extraneous input;
One lead is in order to connect this receiving trap and this data assembly; And
The one electronics formula programmable read only memory transistor of can erasing, this electronics formula programmable read only memory transistor drain of can erasing directly is electrically coupled to this lead, and can the erase transistorized gate of formula programmable read only memory and source electrode of this electronics then directly is electrically coupled to a reference point of potential.
The present invention also provides a kind of assembling and guard method of safety feature, comprises:
One data assembly, a receiving trap, a lead and the electronics formula programmable read only memory transistor of can erasing is provided;
With this data assembly of the direct electric property coupling of this lead and this receiving trap, and with this electronics can erase the transistorized drain electrode of formula programmable read only memory directly electrically lotus root be connected to this lead, and can the erase transistorized gate of formula programmable read only memory and one source pole of this electronics directly is electrically coupled to a reference point of potential;
This electronics formula programmable read only memory transistor of can erasing is carried out the program of erasing, make this electronics formula programmable read only memory transistor of can erasing present not on-state;
Be received from extraneous most electric signals of importing with this receiving trap, and these electric signals are transferred to this data assembly; And
The high voltage signal that appears at this lead is transferred to this electronics formula programmable read only memory transistor of can erasing, make this electronics formula programmable read only memory transistor of can erasing present programmable conducting state.
Description of drawings
Figure 1A to Fig. 1 C is the synoptic diagram of two kinds of common electronics product usefulness safety features in the known technology;
Fig. 2 A to Fig. 2 C is three kinds of synoptic diagram that may change of a preferred embodiment of the present invention;
Fig. 3 is the basic flow sheet of another preferred embodiment of the present invention.
Embodiment
According to the discussion of front, a preferred embodiment of the present invention is a kind of safety feature of electronic product.Shown in Fig. 2 A, comprise data assembly 21, receiving trap 22, lead 23 and the electronics formula programmable read only memory transistor 24 of can erasing at least.
At this, receiving trap 22 is in order to be received from these electric signals of extraneous input; Data assembly 21 is in order to handle most electric signals; Lead 23 is in order to connect receiving trap 22 and data assembly 21.In general, data assembly 22 can be one of following or the combination in any of following each object: microprocessor, integrated circuit, specific use integrated circuit, storer, dynamic RAM, static RAM, the electronics formula programmable storage ROM (read-only memory) of can erasing.And receiving trap 22 can be one of following or the combination in any of following each object: metal gasket, universal sequence end.But it must be emphasized that present embodiment is the two details of restricting data assembly 21 and receiving trap 22 not, also is not subject to this.
Can the erase use of formula programmable read only memory transistor 24 of electronics is big features of present embodiment.Can the erase drain electrode of formula programmable read only memory transistor 24 of electronics directly is electrically coupled to lead 23, electronics can erase the gate of formula programmable read only memory transistor 24 and source electrode the two then all directly be electrically coupled to the reference point of potential 25.
At this, the unique mode that can reverse is that can the erase gate voltage of formula programmable read only memory transistor 24 of oneself programming electronics is increased to high voltage (for example 12 volts), uses the data programmed of erasing.But because gate ground connection (being connected to the reference point of potential 25), therefore there is not any can erase possibility of formula programmable read only memory transistor 24 of electronics of programming of erasing.
At this, for guaranteeing the electronics formula programmable read only memory transistor 24 undesired/unwanted electric signal that can prevent effectively that data assembly 21 from receiving of can erasing, generally speaking, can the erase drain electrode electric property coupling place of formula programmable read only memory transistor 24 of lead 23 and electronics is at lead 23 and receiving trap 22 places of coupling and lead 23 and data assembly 21 couple between the place.Certainly, as long as the quality better of lead 23, the electronics there that formula programmable read only memory transistor 24 lotus roots are received lead 23 of can erasing not is the emphasis that present embodiment is focused on.
The electronics formula programmable read only memory transistor 24 of can erasing can be in by erased status or programmable state:
(1) when electronic product is not imported data as yet or imported data, the electronics formula programmable read only memory transistor 24 of can erasing is to be positioned at by erased status (not on-state).At this moment, any electric signal that receiving trap 21 occurs all can be transferred to data assembly 21 via lead 23, can the erase existence not influence fully of formula programmable read only memory transistor 24 of electronics.
(2) after electronic product has been imported data and has been finished, electronics can erase formula programmable read only memory transistor 24 programme by the high voltage (electric signal) (conducting state).At this moment, any electric signal that appears at receiving trap 21, can erase formula programmable read only memory transistor 24 via lead 23 and electronics and be transferred to the reference point of potential 25 in the capital, the function of safety feature is brought into play in can the erase existence of formula programmable read only memory transistor 24 of electronics fully.At this, high voltage is normally from lead 23, particularly from receiving trap 22 (controlled import by extraneous institute).
Must lay special stress on ground be, according to the known electronics formula programmable read only memory transistor characteristic of can erasing, appear at can the erase voltage/current etc. of electric signal of formula programmable read only memory transistor drain of the electronics of programming and can not change can the erase conducting state (unless electric signal destroys to the formula programmable read only memory transistor of can erasing electronics greatly) of formula programmable read only memory transistor 24 of programmable electronic again, no matter therefore data assembly 21 is separated with receiving trap 22 by permanent, that is the data that stored any variation can not taken place again.
Certainly, can not enter the data assembly again in order to ensure electric signal, usually shown in B2B figure, by a small resistor 26 between lead 223 and data assembly 21 (other method also can) is installed, allow receiving trap 22 through electronics can erase the source electrode of formula programmable read only memory transistor 24 to the resistance value of the reference point of potential 25 less than receiving trap 22 through lead 23 to the resistance value between the data assembly 21.And, shown in Fig. 2 C, can also allow the current potential of the reference point of potential 25 equate with the current potential of the zero potential point 27 of data assembly 21.
For instance, in erased status, can the erase gate voltage of formula programmable read only memory transistor 24 of electronics can be about 0.5 volt to 0.8 volt; And in programmable state, can the erase gate voltage of formula programmable read only memory transistor 24 of electronics can be about-1.5 volts.The voltage of high voltage signal then can be about 16 volts.
Assembling and guard method that another preferred embodiment of the present invention is a kind of electronic product as shown in Figure 3, comprise following basic step at least:
As prepare shown in the square 31, data assembly, receiving trap, lead and the electronics formula programmable read only memory transistor of can erasing is provided.
At this, the data assembly can be one of following or its any combination: microprocessor, integrated circuit, specific use integrated circuit, storer, dynamic RAM, static RAM, the electronics formula programmable read only memory of can erasing.And receiving trap can be one of following or its combination in any: metal gasket, universal sequence end.
As connect shown in the square 32, with lead direct electric property coupling data assembly and receiving trap, and with electronics can erase formula programmable read only memory transistor drain directly electrically lotus root be connected to lead, and can the erase transistorized gate of formula programmable read only memory and source electrode of electronics directly is electrically coupled to the reference point of potential.
In general, lead and drain electrode electric property coupling part, mostly at lead and the receiving trap place of coupling and lead and data assembly couple between the place.
As erase shown in the square 33, to the electronics formula programmable read only memory transistor program of erasing of can erasing, make the electronics formula programmable read only memory transistor of can erasing present not on-state.
In general, be to carry out the program of erasing with the method for ultraviolet ray irradiation or deep UV irradiation.And after the EOP (end of program) of erasing, the electronics transistorized gate voltage of formula programmable read only memory of can erasing can be about 0.5 volt to 0.8 volt.
As import shown in the data block 34, be received from extraneous most electric signals of importing with receiving trap, and these electric signals are transferred to the data assembly.
Shown in safe handling square 35, the high voltage signal that appears at lead is transferred to the electronics formula programmable read only memory transistor of can erasing, make the electronics formula programmable read only memory transistor of can erasing present programmable conducting state.
In general, be to see through receiving trap the high voltage signal is put on lead.That is, see through to adjust and to import the content of the electric signal of electronic product so far, and can to control be to import data electronic product so far, or will start the safety feature of this electronic product, make this electronic product no longer can receive external electric signal.
In general, when electronics can be erased formula programmable read only memory transistor when presenting programmable conducting state, the electronics transistorized gate voltage of formula programmable read only memory of can erasing can be about-1.5 volts, and the voltage of high voltage signal is about 16 volts.
Apparently because this example do not need to cut off lead or removes receiving trap, therefore when import the high voltage signal therewith the package program of electronic product to proceed to that stage irrelevant, also the last encapsulation of electronic product is irrelevant therewith.Therefore, can after all finish, whole announcement package program import the high voltage signal again and start safety feature.So do, can be on production line, the elasticity that keeps the input data time with revise the elasticity of having imported data, avoid starting the restriction that just can not revise stored content behind the safety feature (electronics can erase formula programmable read only memory transistor) again.Even, if the time guaranteeing input media, encapsulation can not receive noise, terminal user its personal data of input elasticity of restarting safety feature earlier can also be provided.
At last, comprehensively compare these two embodiment and two kinds of known safety devices, can more clearly find advantage of the present invention:
(1) the present invention does not need electric signal coding, all shortcomings that can exempt known coded formula safety feature.
(2) the present invention can elasticity selects the opportunity of input high voltage signal, does not need just to start safety feature as the picture known mechanical formula safety feature before encapsulation finishes.
(3) the present invention is after starting, just can be as the known mechanical formula safety feature, and storage data is isolated from the outside forevermore.
(4) the present invention does not need to remove receiving trap, can exempt the unavoidable damage of known mechanical formula safety feature.
(5) the present invention only needs to import a high voltage signal and can start, and compared with the cutting or the coding of known technology, operation steps is the simplest, and relevant cost is also minimum.
The above is preferred embodiment of the present invention only, is not in order to limit claim of the present invention; All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should be included in the following claim.
Claims (25)
1. the safety feature of an electronic product comprises:
One data assembly is in order to handle most electric signals;
One receiving trap is in order to be received from these electric signals of extraneous input;
One lead is in order to connect this receiving trap and this data assembly; And
The one electronics formula programmable read only memory transistor of can erasing, this electronics formula programmable read only memory transistor drain of can erasing directly is electrically coupled to this lead, and can the erase transistorized gate of formula programmable read only memory and source electrode of this electronics then directly is electrically coupled to a reference point of potential.
2. as the described safety feature of claim claim 1, it is characterized in that it is one of following that this data assembly is selected from: microprocessor, integrated circuit, specific use integrated circuit, storer, dynamic RAM, static RAM, the electronics formula programmable read only memory of can erasing.
3. as the described safety feature of claim claim 1, it is characterized in that it is one of following that this receiving trap is selected from: metal gasket, universal sequence end.
4. as the described safety feature of claim claim 1, it is characterized in that, this lead and this electronics transistorized this drain electrode electric property coupling part of formula programmable read only memory of can erasing, at this lead and this receiving trap place of coupling and this lead and this data assembly couple between the place.
5. as the described safety feature of claim claim 1, it is characterized in that this electronics formula programmable read only memory transistor of can erasing is erased.
6. as the described safety feature of claim claim 5, it is characterized in that this electronics can be erased formula programmable read only memory transistor by after being erased, the high voltage of being imported by this receiving end is certainly programmed again.
7. as the described safety feature of claim claim 5, it is characterized in that this electronics formula programmable read only memory transistor of can erasing is by after being erased, programmed by the high voltage of this lead certainly again.
8. as the described safety feature of claim claim 6, it is characterized in that, this receiving trap through this electronics can erase transistorized this source electrode of formula programmable read only memory to the resistance value between this reference point of potential less than this receiving trap to the resistance value between this data assembly.
9. as the described safety feature of claim claim 7, it is characterized in that, this receiving trap through this electronics can erase transistorized this source electrode of formula programmable read only memory to the resistance value between this reference point of potential less than this receiving trap to the resistance value between this data assembly.
10. as the described safety feature of claim claim 1, it is characterized in that the current potential of this reference point of potential is to equate with the current potential of the zero potential point of this data assembly.
11., it is characterized in that this electronics transistorized gate voltage of formula programmable read only memory of can erasing is about 0.5 volt to 0.8 volt as the described safety feature of claim claim 5.
12., it is characterized in that this electronics transistorized gate voltage of formula programmable read only memory of can erasing is about-1.5 volts as the described safety feature of claim claim 6.
13., it is characterized in that this electronics transistorized gate voltage of formula programmable read only memory of can erasing is about-1.5 volts as the described safety feature of claim claim 7.
14., it is characterized in that the voltage of this high voltage signal is about 16 volts as the described safety feature of claim claim 6.
15., it is characterized in that the voltage of this high voltage signal is about 16 volts as the described safety feature of claim claim 7.
16. the assembling of a safety feature and guard method comprise:
One data assembly, a receiving trap, a lead and the electronics formula programmable read only memory transistor of can erasing is provided;
With this data assembly of the direct electric property coupling of this lead and this receiving trap, and with this electronics can erase the transistorized drain electrode of formula programmable read only memory directly electrically lotus root be connected to this lead, and can the erase transistorized gate of formula programmable read only memory and one source pole of this electronics directly is electrically coupled to a reference point of potential;
This electronics formula programmable read only memory transistor of can erasing is carried out the program of erasing, make this electronics formula programmable read only memory transistor of can erasing present not on-state;
Be received from extraneous most electric signals of importing with this receiving trap, and these electric signals are transferred to this data assembly; And
The high voltage signal that appears at this lead is transferred to this electronics formula programmable read only memory transistor of can erasing, make this electronics formula programmable read only memory transistor of can erasing present programmable conducting state.
17. assembling and guard method as the described safety feature of claim claim 16 is characterized in that, allow this lead and this drain electrode electric property coupling part, at this lead and this receiving trap place of coupling and this lead and this data assembly couple between the place.
18. assembling and guard method as the described safety feature of claim claim 16 is characterized in that, carry out this program of erasing with the method for ultraviolet ray irradiation or deep UV irradiation.
19. assembling and guard method as the described safety feature of claim claim 16 is characterized in that, are to see through this receiving trap to receive this high voltage signal that comes from the outside.
20. assembling and guard method as the described safety feature of claim claim 16 is characterized in that, still can finish a package program of this electronics earlier after having received these electric signals, and then import this high voltage signal.
21. assembling and guard method as the described safety feature of claim claim 16; it is characterized in that, this data assembly be selected from one of following: microprocessor, integrated circuit, specific use integrated circuit, storer, dynamic RAM, static RAM, the electronics formula programmable read only memory of can erasing.
22. assembling and guard method as the described safety feature of claim claim 16 is characterized in that, this receiving trap be selected from one of following: metal gasket, universal sequence port.
23. assembling and guard method as the described safety feature of claim claim 16 is characterized in that, after this erased EOP (end of program), this electronics transistorized gate voltage of formula programmable read only memory of can erasing was about 0.5 volt to 0.8 volt.
24. assembling and guard method as the described safety feature of claim claim 16; it is characterized in that; when this electronics can be erased formula programmable read only memory transistor when presenting programmable conducting state, this electronics transistorized gate voltage of formula programmable read only memory of can erasing is about-1.5 volts.
25. assembling and guard method as the described safety feature of claim claim 16 is characterized in that, the voltage of this high voltage signal is about 16 volts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021605076A CN1327450C (en) | 2002-12-27 | 2002-12-27 | Electronic product with safety device and its using method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021605076A CN1327450C (en) | 2002-12-27 | 2002-12-27 | Electronic product with safety device and its using method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1512512A CN1512512A (en) | 2004-07-14 |
| CN1327450C true CN1327450C (en) | 2007-07-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021605076A Expired - Lifetime CN1327450C (en) | 2002-12-27 | 2002-12-27 | Electronic product with safety device and its using method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1327450C (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5197028A (en) * | 1989-08-18 | 1993-03-23 | Kabushiki Kaisha Toshiba | Semiconductor memory device with dual reference elements |
| WO1998053459A1 (en) * | 1997-05-21 | 1998-11-26 | Atmel Corporation | Semiconductor memory for secure data storage |
-
2002
- 2002-12-27 CN CNB021605076A patent/CN1327450C/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5197028A (en) * | 1989-08-18 | 1993-03-23 | Kabushiki Kaisha Toshiba | Semiconductor memory device with dual reference elements |
| WO1998053459A1 (en) * | 1997-05-21 | 1998-11-26 | Atmel Corporation | Semiconductor memory for secure data storage |
| CN1226991A (en) * | 1997-05-21 | 1999-08-25 | 爱特梅尔股份有限公司 | Semiconductor memory for secure data storage |
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| Publication number | Publication date |
|---|---|
| CN1512512A (en) | 2004-07-14 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111129 |
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Effective date of registration: 20111129 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corp. Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. |
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