CN1325561A - Superconductive resonator and filter dvices and method for manufacturing same - Google Patents
Superconductive resonator and filter dvices and method for manufacturing same Download PDFInfo
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- CN1325561A CN1325561A CN 99813031 CN99813031A CN1325561A CN 1325561 A CN1325561 A CN 1325561A CN 99813031 CN99813031 CN 99813031 CN 99813031 A CN99813031 A CN 99813031A CN 1325561 A CN1325561 A CN 1325561A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2/00—Networks using elements or techniques not provided for in groups H03H3/00 - H03H21/00
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
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Abstract
Electromagnetic resonator and filter devices are formed on a substrate having opposing sides. A superconductor layer on a first side is patterned in the form of at least one self resonant spiral. Input and output coupling structures, such as inductive loops or spirals, are formed on the opposing side of the substrate. Multi-pole filter devices are formed with several, commonly supported resonator elements disposed in a cooperative relationship on the first side of a substrate. Plural resonator elements can also be used to form multiple-output channelizing filters.
Description
Invention field
The present invention relates to rf-resonator and filter device, particularly this device made from superconductor.
Background technology
Since previous discovery, high-temperature superconductor (HTS) material just is considered as film Resonator and filter, little band or cavity structure during for example microwave communication is used in the GHZ frequency range.Because electrical loss is low, is expected to obtain high Q value so the HTS material is used for this class device.This advantage is applied to low frequency end equally, and it is big beyond forbearance that the common 1/4 wavelength parallel coupled design that still is generally used for microwave frequency causes being operated in the interior device size of MHZ scope.
It is the piecemeal elements method that but a kind of resonator of the MHZ of making scope and filter reach the method for practical dimensions, and it adopts discrete inductance and capacitor cell.A kind of such structure is made up of two circle helix tubes, and the internal digital capacitor is arranged between the circle.Another kind of structure comprises two solenoids and two capacitive coupling rings that separated by dielectric layer.The third structure comprises the self-resonance solenoid.But at low MHZ frequency end, it is longer to be used for forming solenoidal conductor length, causes resistance big and circuit Q value is lower.
Filter can be designed as and is operated under an interested frequency or a plurality of frequency.For example channel filter receives a plurality of frequency signals and to one or more output ports output signal optionally on an input port.To interesting " microwave filter, impedance matching network and coupled structure " the 16th chapter (Artech House, Dedham, MA, 1980) of channel filter referring to people such as G.Matthaei.
Summary of the invention
A target of the present invention provides a kind of small-sized, high Q value, low-loss resonator structure, is suitable for the frequency of MHZ scope.
Further object of the present invention provides a kind of filter that adopts a plurality of superconducting resonators unit, is suitable for all frequencies that the MHZ scope comprises.
According to an embodiment, electromagnetic resonator comprise have first with second the substrate relative with first.The superconducting solenoid resonator structure is positioned on first of described substrate.Input coupled structure and output coupled structure are positioned in second of substrate and go up and be placed as with the solenoid resonator and be coupled.
Reasonable, the superconducting solenoid resonator structure is made up of the high temperature superconducting materia such as yttrium barium copper oxide and thallium barium calcium copper oxide.Equally, input coupled structure and output coupled structure also can be made by similar high temperature superconducting materia.
In another embodiment, the em filtering device comprise have first with second the substrate relative with first.A plurality of superconducting solenoid resonator structures are positioned on first of described substrate.Input coupled structure and output coupled structure be positioned in second of substrate go up and with a plurality of superconducting resonators at least one coupling.
In preferred embodiment, a plurality of superconducting solenoid resonator structures have with the geometry of the elongation of first end and second end and a plurality of superconducting solenoid resonator structure to be settled with edge-to-edge's relation form side by side basically.
In a further embodiment, first end of one of them of input coupled structure and a plurality of superconducting solenoid resonator structures aligns.Equally, second end of one of them of output coupled structure and a plurality of superconducting solenoid resonator structures aligns.
A plurality of superconducting solenoid resonator structures can have the basic resonance frequency that equates and as multipole some filter collaborative work.In addition, a plurality of superconducting solenoid resonator structures can be operated under a plurality of resonance frequencys of corresponding a plurality of outputs, thereby constitute channel filter.
The accompanying drawing summary
Figure 1A is the end face enlarged drawing of schematic resonator solenoid structure.
Figure 1B is the enlarged diagram of Figure 1A solenoid structure detail section.
Fig. 1 C is the physical model of the schematic resonator solenoid structure of Figure 1A.
Fig. 1 D is the electrical model of corresponding diagram 1C physical model.
Fig. 2 is the profile of the resonator structure of Figure 1A, but illustrates not in scale.
Fig. 3 is for testing the relation of definite reflectivity as the function of Fig. 1 resonator solenoid structure frequency.
Fig. 4 A-4C is the schematic diagram of preferable three pole filters of preferred embodiment of the present invention.
Fig. 5 is as the reflectivity (S11) of the function of the filter frequencies of Fig. 4 C and the definite schematic diagram that concerns of experiment of insertion loss (S12).
Fig. 6 is the replacement resonator structure schematic diagram according to the further embodiment of the present invention, comprises inductance loop part and internal digital capacitor part.
Fig. 7 is the schematic diagram with resonator solenoid layout on the side of substrate of the schematic RF channel filter of three outputs.
The resonator solenoidal schematic diagram of Fig. 8 for being comprised in Fig. 7 filter.
Fig. 9 is the schematic coupling circuit schematic diagram that is formed with Fig. 7 filter of an input and three outputs on the opposite side of filter substrate.
Figure 10 is the equivalent circuit schematic diagram of Fig. 7-9 filter.
Figure 11-13 be three of Fig. 7-9 filter output loops each reflectivity and the curve chart of transmissivity.
In the accompanying drawing, unless otherwise, identical label is used for representing the identical feature of illustrated embodiment, unit, unit or part with character.Though by accompanying drawing the present invention is described, relevant with illustrated embodiment.Under the prerequisite that does not depart from claims, can make various modifications and change to the present invention.
The preferred mode that carries out an invention
Figure 1A shows schematic resonator solenoid geometry and resonance frequency is the size of the resonator embodiment about 24.5MHZ.Figure 1B is the enlarged drawing of Figure 1A, further shows schematic solenoid resonator structure, and evenly spaced 20 circles that it is formed with superconductor form, and reasonable is high-temperature superconductor (HTS).The solenoid resonator structure generally is designed to self-resonance under required frequency.The inductance that the solenoid superconductor structure provides is positioned under the resonance of inside configuration natural capacity.This solenoid resonator structure has the 40000 non-loaded Q values of surpassing when being made by superconductor.Fig. 1 C and 1D show the physics of equal value and the electrical model of the resonator structure of Figure 1A respectively.In the simple circular solenoid inductor of Fig. 1 C, inductance may be calculated:
Here
And n is the number of turn in the solenoid, D
0External diameter D for solenoid structure
iBe the internal diameter of solenoid structure, unit is a micron.Solenoidal resistance can be determined by following formula
Here K is constant (being assumed to 1 for the structure that does not have ground plane), R
sFor the sheet resistance that constitutes solenoidal material and W for constituting the width of solenoidal track.For superconductor, R
sNumerical value be the microhm magnitude, this makes and to form bigger inductance with low resistance.Solenoid resonator structure natural capacity is
C(pf)=3.5×10
-5D
0+0.06 (4)
Equation 1-4 can be by using area table aspect D
0And D
iAnd be generalized to various geometries
With
Here a
0External area a for resonator structure
iInternal area for resonator structure.
Fig. 2 is the resonator profile of Figure 1A.Resonator be formed on the substrate 200 and comprise the superconducting solenoid structure 202 that is formed on 200 1 sides 210 of substrate and substrate 200 opposite flanks 208 on the input structure 204 and the export structure 206 that form.The input and output structure can utilize common conductor material to form, for example copper or aluminium.But input of being made by superconductor and/or export structure (for example being used for constituting the material of superconducting solenoid structure 202) have keeps high circuit Q value and low-loss advantage.At an embodiment, superconducting solenoid structure 202 is the solenoid resonator structure of Figure 1A.In another embodiment, superconducting layer structure 202 can be as shown in Figure 8.In Figure 1A and 8, solenoid structure is non-circular for elongation.This feature of solenoid structure makes when a plurality of solenoid structures are placed face-to-face compact more, for example as following multipole some filter embodiment.In the solenoid resonator illustrative examples according to figure lA, substrate 200 is 2 inches aluminate lanthanums (LAO) wafer substrates, and thickness is about 20 Mills (mils).Superconducting solenoid structure 202 suitable materials are yttrium barium copper oxide (YBCO), and it is deposited on the substrate 200 as the thick one deck of 200nm.Ybco film can utilize laser ablation or sputtering deposit method to be deposited on the substrate under 700-800 ℃.LAO substrate and YBCO material are provided by several commercial supplier, comprise Dupont.The YBCO material still has superconductivity up to 770K the time.
When adopting YBCO to constitute superconducting layer structure 202, because the high degree of compatibility of lattice match between the relevant brilliant line structure with these materials of LAO, so LAO is preferable backing material.Other suitable backing materials comprise manganese oxide (MgO) and strontium titanates (STO).
Generally, the material thickness of formation superconducting solenoid structure 202 should surpass the infiltration thickness of material.Under the YBCO situation, infiltration thickness is about 270 nanometers, and film thickness is reasonable to be the 270-450 nanometer.Other suitable superconductors are thallium barium calcium oxides (TBCCO), and its infiltration thickness is about 450 nanometers.In this case, the thickness of TBCCO film is reasonable is in the 450-750 nanometer range.
Schematic resonator shown in Figure 1A can be by making according to the ybco film on the photoengraving pattern technology utilization cleaning LAO substrate of follow procedure.At first, photoresists (for example Microposit S1813 of the Shepley of the Marlborough in Massachusetts state manufacturing) are applied on the side 208 of substrate 200, rotate 40 seconds to set up basic film uniformly with 1500rpm subsequently.Substrate heats 3 minutes down with dry film at 120 ℃ subsequently.Remove the photoresists at substrate 200 back sides 210 subsequently, for example utilize the cotton swab of band acetone.Substrate was placed on developer solution (for example MF319 of the Shepley of the Marlborough in Massachusetts state manufacturing) interior 1 minute without exposure.This has set up protective film on side 208.
Photoresists are applied on the side 210 and rotate 40 seconds to set up basic film uniformly with 4500rpm subsequently.Substrate 200 is heated 2 minutes subsequently under 120 ℃.After the substrate cooling, the positive photomask of resonator structure is applied on the substrate 200.Photomask is subsequently at 5.6mW/cm
2Under the UV light of power through for example 25 seconds exposure.Substrate was placed in the developer (for example Microposit MF319) 1 minute once more.After in case develop, by coming implementation structure with the YBCD layer of 200 nanometers of the zone under the photoresists that eroded exposure in 40 seconds at the phosphoric acid solution of dilution (obtaining) from the Olin microelectronic material limited company of the Norwalk in Connecticut state.For the YBCO layer of 300nm, etching time is about 80 seconds, and the thick more etching time of film is long more.
Should remove substrate subsequently to remove remaining photoresists.Substrate 200 is placed on solvent (acetone) can be realized in interior about 2 minutes.
Meanwhile on side 208, form the input and output structure, the protective layer of coating as mentioned above, drying, exposure and development photoresists in order to protect the superconducting solenoid structure corrosion on the side 210.
Adopt the following step on substrate back 208, to form contact pad.Clean substrate side 208 is to remove dirt and any photoresists.Then, except the negative film mask be used for the contact pad according to mode same as described above apply, rotate, dry and exposure photoresists.Substrate was immersed chlorobenzene 5 minutes subsequently and development as mentioned above.By deposit 50 nanometer Ag/100 nanometer Au/150 nanometer Ag or 50 nanometer Ag/50 nanometer Au/200 nanometer Ag, on the contact area of removing by the exposure photoresists that develop, form metal coating.Can adopt subsequently and put forward technology, utilize acetone to remove unexposed superconductor.After annealing then can be annealed final structure 10-20 minute down at 550 ℃ in pure oxygen atmosphere if desired.
Fig. 3 shows the reflectivity Characteristics that the experiment of Figure 1A resonator is determined, resonator works is under 77 ° of K temperature.As shown in Figure 3, the resonance frequency 24.5455MHZ of schematic resonator, non-loaded Q value surpasses 40000.The input structure 204 of resonator forms one of them circular portion 102,104 of coupling loop road substantial registration resonator structure 200 under the single copper coupling loop on substrate 200 back sides 208.Second bronze medal coupling loop on substrate 210 back sides 208 is another circular portion 102,104 of the pattern of substantial registration formation export structure 206 also.It is evident that, can adopt another coupled structure to replace single loop pattern to be used for the input and output coupled structure, for example multiturn solenoid structure etc.
Fig. 4 A-4C shows another embodiment of three pole filters of the resonator structure that adopts Figure 1A.The filter construction that only is illustrative nature comprises aforesaid three resonator structures 402,404,406, is operated under the basic resonance frequency that equates and in close mode to be placed on substrate 200 first sides.Though utilize the geometry shown in Figure 1A to show resonator, also can adopt other solenoid geometries.By utilizing the geometry (as Figure 1A or shown in Figure 7) rather than the circle geometry of elongation, adopt the size of the filter of several solenoid resonators to reduce.The difference of each embodiment of Fig. 4 A-4C is the layout of input structure 204 and export structure 206.
For example, in Fig. 4 A, input structure 204 adopts big loop 408, and it is coupled with the input side of each solenoid resonator structure 402,404,406.Equally, the export structure of Fig. 4 A also adopts big loop, the outlet side coupling of it and each solenoid resonator structure 402,404,406.In Fig. 4 B, first minor loop is placed in the importation of central relatively resonator 404, and its diameter approximately is the importation diameter of solenoid resonator structure 404,406,408.Same minor loop 414 is placed by the output with respect to resonator 404.Fig. 4 C adopts and input and output structure like Fig. 4 category-B, except placing and the output placement of input loop 418 relative resonators 402 importation of input loop 416 relative resonators 406, so make interval maximum between the input and output coupled structure.
Schematic 3 pole filter embodiment according to Fig. 4 A-4C test under 77 ° of K.With HP-8712B RF network analyzer, for three peak value measurements of each filter reflection loss (S11) and insert loss (S12).Table 1 shows the measurement data of each structure shown in Fig. 4 A-4C.
Table 1.
S11 S12 S11 S12 S11 S12, (a) f[MHZ] 23.65 23.92 24.27 losses [db]-3.5-8.0-3.5-7.0 21.0-5.5, (b) f[MHZ] 22.55 63.33 24.27 losses [db]-3.03-29.56-5.48-12.88 2.70-37.28, (c) f[MHZ] 24.07 24.28 24.50 losses [db]-6.37-2.02-4.62-2.55-6.56-2.05
For the filter according to Fig. 4 C, the single peak value Q value after the coupling is about 600.Maximum insertion between the peak value Nos.1 and 3 is-6.91dB.Frequency place outside band passes to for example less than 23.77MHZ or greater than in the 25.03MHZ scope, as shown in Figure 5, inserts loss and surpasses 40dB (dynamic range).
Though the embodiment of Fig. 4 shows 3 pole filter structures, it is evident that also and can use n limit structure that n is the quantity of used resonator structure here.
Fig. 6 shows another structure that is suitable for as input structure 204 and/or export structure 206, and it comprises by a plurality of conductors or the inductive part 602 of superconductor material circle formation and the capacitor part 604 that is formed by internal digital coupling conductors or superconducting conductor lengths.Under the resonator part, the resonance under the required operating frequency of the chosen realization of the inductance of the coupled structure of Fig. 6 and capacitance.Therefore can form the more coupled structure of multi-frequency selection on side of substrate, its resonance frequency is mated the resonance frequency of a plurality of limit resonator elements on other sides of substrate relative with the I/O coupled structure basically.
Fig. 7-9 shows schematic multiple-output channel RF filter, and it can utilize above-mentioned photoetching process to form.Filter can be formed at single above on the LAO substrate of YBCO layer of deposit 300 nanometer thickness.Three solenoid resonators 702,704,706 can form, and place at interval on first side 210 of substrate 200 suitably.Generally speaking, it is not to be operated under the same resonance frequency that channel filter is used, but is operated on the resonance frequency of corresponding interested particular channel or frequency.In channel filter is used, need make the mutual coupling between the adjacent resonators minimum, so the interval between the resonator 702,704,706 should be bigger.Yet physical space is very expensive, as shown in Figure 7, can hold skew to reduce coupling by providing between adjacent resonators.At the opposite side 208 of substrate 200, first end placement of input coupled structure 902 relative resonators 704 and three coupled structures 904,906,908 are placed as one of them output of each loop substantial registration resonator 702,704,706.Coupled structure 902 is as RF input coupled structure, and coupled structure 904,906,908 is as the output coupled structure of channelizing output, so each output will only allow the frequency in the selected frequency band to appear at terminal.As shown in Figure 6, coupled structure can be simple loop, multiturn solenoid or more frequency choice structure.
Figure 10 shows the equivalent circuit of the filter of Fig. 7-9.The filter of Fig. 7-9 can be with 1002 modelings of first transformer, and transformer is by the power drives that comprises ideal voltage source and series resistance (equal the system features impedance, be generally 50 ohm).The elementary expression input structure 902 of transformer 1002, and secondary representative resonator 704 parts of transformer 1002.Transformer 1004,1006,1008 is represented the coupling between resonator 702,704,706 and the export structure 906,906,908 respectively.Transformer 1010,1012 is represented the coupling between resonator 702,704 and 704,706 respectively.The total impedance of resonator 702 is distributed in elementary and transformer 1010 elementary of secondary, the transformer 1004 of transformer 1002.Equally, the total impedance of resonator 704,706 is distributed in the series transformer unit of each structure of expression. Electric capacity 1014,1016 and 1018 is represented the electric capacity of resonator 702,704 and 706 respectively. Resistor 1020,1022,1024 is represented the intrinsic resistance of resonator 702,704 and 706 respectively.The inductance of the circuit model of Figure 10, electric capacity and resistance value can be utilized by Fig. 1 C equation 1-5 relevant with 1D and determine.Resistor R L1, RL2 and RL3 represent the output loading with each output coupled structure coupling.Resistor 1026,1028 and 1030 is high resistance resistor (i.e. 1 megohms), is the simulation softward needs.
Can according to the application-specific needs select suitable reflection coefficient (S11), transmission coefficient (S12, S21), the interval between the distance between the adjacent peak in each frequency band, two passbands and the Q value of device.Device application comprises single input, exports RF and microwave filter/receiver more, can be used for satellite (in several GHz frequency ranges), cellular basestation (hundreds of MHZ), TV, wireless and LF communication system.
Similarly filter construction can be used as the collection coil of magnetic resonance imaging (MRI), is with a plurality of resonance structures on substrate one side, and is with output winding on other sides.A plurality of resonance structures are used for wireless input subsequently, and output can be used as each detected different frequency, for example in each corresponding medical diagnosis sample or organize in different chemical elements.
Though described the present invention by specific embodiment, can under the prerequisite that does not depart from spirit and scope of the invention, make various modifications and variations to the present invention.
Claims (17)
1. electromagnetic resonator is characterized in that comprising:
Have first with second the substrate relative with first;
Be formed at the superconducting solenoid resonator structure on first of the described substrate;
At least one is placed on the input coupled structure on described second of described substrate; And
At least one is placed on the output coupled structure on described second of described substrate.
2. electromagnetic resonator as claimed in claim 1 is characterized in that the superconducting solenoid resonator structure forms by being selected from the one group of material that comprises yttrium barium copper oxide and thallium barium calcium oxide.
3. electromagnetic resonator as claimed in claim 1, it is characterized in that described at least one the input coupled structure and described at least one output coupled structure make by superconductor.
4. electromagnetic resonator as claimed in claim 3 is characterized in that superconductor is by being selected from the one group of material that comprises yttrium barium copper oxide and thallium barium calcium oxide.
5. electromagnetic resonator as claimed in claim 1 is characterized in that described at least one input structure and at least one described export structure comprise the metal inductance unit.
6. electromagnetic resonator as claimed in claim 1 is characterized in that the superconducting solenoid resonator structure has the geometry of elongation.
7. em filtering device is characterized in that comprising:
Have first with second the substrate relative with first;
Be positioned in a plurality of superconducting solenoid resonator structures on described first;
At least one is placed on the input coupled structure on described second of described substrate, is coupled on described at least one input coupled structure and at least one the described superconducting resonator arrangement works; And
At least one is placed on the output coupled structure on described second of described substrate, and described at least one output coupled structure is coupled with at least one described superconducting resonator structure.
8. em filtering device as claimed in claim 7, it is characterized in that described a plurality of superconducting solenoid resonator structure has the geometry with the elongation of first end and second end, and described a plurality of superconducting solenoid resonator structure is settled with edge-to-edge's relation form side by side basically.
9. em filtering device as claimed in claim 8 is characterized in that at least one described first end of described at least one input coupled structure and described a plurality of superconducting solenoid resonator structures aligns.
10. em filtering device as claimed in claim 9 is characterized in that at least one described second end of described at least one output coupled structure and described a plurality of superconducting solenoid resonator structures aligns.
11. em filtering device as claimed in claim 8 is characterized in that at least one described first end departs from first end of contiguous superconducting solenoid resonator structure.
12. em filtering device as claimed in claim 7 is characterized in that described at least one input coupled structure and described at least one output coupled structure comprise discrete inductive part and capacitor part.
13. em filtering device as claimed in claim 8 is characterized in that described a plurality of superconducting solenoid resonator structure forms by being selected from the one group of material that comprises yttrium barium copper oxide and thallium barium calcium oxide.
14. em filtering device as claimed in claim 7 is characterized in that described at least one input coupled structure and described at least one export structure comprise the metal inductance unit.
15. electromagnetic resonator as claimed in claim 7, it is characterized in that described at least one the input coupled structure and described at least one output coupled structure make by high temperature superconducting materia.
16. em filtering device as claimed in claim 7, each that it is characterized in that described a plurality of superconducting solenoid resonator structures is with basic frequency resonance that equates.
17. em filtering device as claimed in claim 7 is characterized in that described a plurality of superconducting solenoid resonator structure with a plurality of frequency resonances, one of them of corresponding described at least one the output coupled structure of each of described a plurality of frequencies.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10019998P | 1998-09-14 | 1998-09-14 | |
| US60/100,199 | 1998-09-14 | ||
| US12617399P | 1999-03-25 | 1999-03-25 | |
| US60/126,173 | 1999-03-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1325561A true CN1325561A (en) | 2001-12-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 99813031 Pending CN1325561A (en) | 1998-09-14 | 1999-09-14 | Superconductive resonator and filter dvices and method for manufacturing same |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1114512A2 (en) |
| CN (1) | CN1325561A (en) |
| AU (1) | AU2342500A (en) |
| CA (1) | CA2344327A1 (en) |
| MX (1) | MXPA01002713A (en) |
| WO (1) | WO2000021195A2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1551497B (en) * | 2003-05-20 | 2010-04-28 | 株式会社东芝 | Bandpass filter |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201603263D0 (en) | 2016-02-25 | 2016-04-13 | King S College London | Biomarkers for response to bip (rasolvir) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998000880A1 (en) * | 1996-06-28 | 1998-01-08 | Superconducting Core Technologies, Inc. | Planar radio frequency filter |
-
1999
- 1999-09-14 CN CN 99813031 patent/CN1325561A/en active Pending
- 1999-09-14 AU AU23425/00A patent/AU2342500A/en not_active Abandoned
- 1999-09-14 WO PCT/US1999/021356 patent/WO2000021195A2/en not_active Application Discontinuation
- 1999-09-14 MX MXPA01002713A patent/MXPA01002713A/en unknown
- 1999-09-14 CA CA002344327A patent/CA2344327A1/en not_active Abandoned
- 1999-09-14 EP EP99967072A patent/EP1114512A2/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1551497B (en) * | 2003-05-20 | 2010-04-28 | 株式会社东芝 | Bandpass filter |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1114512A2 (en) | 2001-07-11 |
| WO2000021195A9 (en) | 2000-08-24 |
| WO2000021195A3 (en) | 2000-07-06 |
| WO2000021195A2 (en) | 2000-04-13 |
| AU2342500A (en) | 2000-04-26 |
| CA2344327A1 (en) | 2000-04-13 |
| MXPA01002713A (en) | 2002-04-08 |
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| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |