CN1323068A - Inner emitting infrared detector with 3-5 micron Si-Ge/Si heterojunction and its prepn - Google Patents

Inner emitting infrared detector with 3-5 micron Si-Ge/Si heterojunction and its prepn Download PDF

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CN1323068A
CN1323068A CN01113204A CN01113204A CN1323068A CN 1323068 A CN1323068 A CN 1323068A CN 01113204 A CN01113204 A CN 01113204A CN 01113204 A CN01113204 A CN 01113204A CN 1323068 A CN1323068 A CN 1323068A
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diffusion
phosphorous diffusion
sio
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CN1137521C (en
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张翔九
胡际璜
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Fudan University
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Abstract

The present invention belongs to the technology of IR detector and the IR detector has window of molecular beam epitaxy SiGe/Si hetedrojuction material. The detector has working bandwidth of 3-5 microns, working temperature of 80K, highest 105K, and excellent performance. It may be operated on liquid nitrogen in room temperature and on no refrigerant in outer space. It has high blackbody responsivity and blackbody detectivity, and is manufactured with large size silicon chip. The preparation of the present invention is suitable for manufacturing large scale IR detector plane array with high performance-to-cost ration.

Description

3-5 5 micron Si-Ge/Si heterojunction inner emitting infrared detector and preparation method thereof
The invention belongs to the Infrared Detectors technical field, be specifically related to a kind of SiGe/Si heterojunction inner emitting infrared detector and preparation technology thereof.
Photoelectric emission Infrared Detectors (hereinafter to be referred as the SiGe/Si detector) is a kind of silicon-based detector that the nineties grows up in SiGe/Si (SiGe/Si) heterojunction.Because the energy gap of silicon is 1.1ev, the energy gap of germanium is 0.67ev, thereby these two kinds of materials all can't be used for the detector of development work wavelength greater than 1.5 μ m.The SiGe/Si detector be utilize between SiGe alloy and the Si material can be with the skew and work.Under infrared radiation, the hole transition among the SiGe is crossed the potential barrier of the valence band between SiGe and the Si, forms photoelectric current.This detector is a kind of detector of photovoltaic type.The SiGe/Si detector is since coming out, and people's work concentrates on always develops the Infrared Detectors of wavelength greater than 8 μ m.This detector no doubt has its importance on using, but the SiGe/Si detector that works in this wave band has a very important disadvantages, be exactly that working temperature is too low, it can only just can be worked being lower than under the temperature of 50K, thereby must be equipped with special refrigeration machine, can't do refrigerant work with liquid nitrogen.This brings a lot of troubles and difficulty to application, has also brought a lot of restrictions.The 3-5 mu m waveband is another important atmosphere infrared window.People wish to obtain a kind ofly can work in the 3-5 mu m waveband, and the SiGe/Si Infrared Detectors that can work under higher temperature, enlarge the device range of application.
The objective of the invention is to propose a kind ofly can work in the 3-5 mu m waveband, and the SiGe/Si Infrared Detectors that can under higher temperature, work.
Photoelectric emission Infrared Detectors in the SiGe/Si heterojunction that the present invention proposes is by silicon substrate film, and the SiO that makes on silicon substrate film 2Compositions such as floor, boron diffusion district, light phosphorous diffusion district, dense phosphorous diffusion district, infrared acquisition window and electrode, its structure as depicted in figs. 1 and 2.Wherein, the Infrared Detectors window adopts the Si of molecular beam epitaxial growth 1-xGe x/ Si heterojunction material; Alloy Si 1-xG xIn, 0.45≤x≤0.55, thickness is the 100-120 dust, p type doped source is B 2O 3, p type doping content is 10 20/ cm 3The order of magnitude.
Among the present invention, silicon substrate film thickness is 0.4-0.5mm, and resistivity is 10-20 Ω-cm.On silicon substrate film, one SiO is arranged with the thermal oxidation method growth 2Layer, thickness is the 7000-10000 dust.At SiO 2Layer glazing is carved with a square ring-type boron diffusion window p +, this p +The width of Qu Huan is 6 ± 2 μ m, and the square resistance in boron diffusion district is 10-20 Ω/, junction depth 2 ± 0.1 μ m; At p +In the inner rim institute area surrounded of Qu Huan, photoetching has the light phosphorous diffusion of square ring-type district n, and the side ring width in this n district is 6 ± 2 μ m, and the square resistance in light phosphorous diffusion district is 450-550 Ω/, junction depth 1 ± 0.1 μ m; Upside place photoetching in the n district has a dense phosphorous diffusion district n+ (figure bend part), and the square resistance in dense phosphorous diffusion district is 4-6 Ω/, and junction depth is 1 ± 0.1 μ m; Centre photoetching at figure has a square photosensitive area G (be the infrared acquisition window, represented by frame of broken lines among the figure), and the Q-RING in this district and n district partially overlaps, and with the molecular beam epitaxy technique growth Si is arranged in the photosensitive area 1-xGe xAlloy firm, thickness are the 100-120 dust, 0.45≤x≤0.55; On device, adopt low temperature deposition deposition techniques SiO 2Layer, thickness is the 7000-10000 dust; At p+ district and leaded hole C of n+ district photoetching and C '; Locate to be manufactured with aluminium electrode T at fairlead C and C ', thickness is 2.2 ± 0.3 μ m; Be deposited with the media coating that passivation is used on device, this dielectric layer can be used SiO 2Or Si 3N 4, deposition temperature is not more than 450 ℃, and thickness is the 2000-3000 dust.
Since the Infrared Detectors of the present invention's design, the Si that is adopted 1-xGe x/ Si heterojunction material (0.45≤x≤0.55) has good performance, can be in 3-5 mu m waveband work, and detector operation temperature height can be greater than 80K, the highlyest can reach 105K.Under room temperature environment, detector can be done refrigerant work with liquid nitrogen; And in space environment (ambient temperature is 105K), can carry out work by any refrigerant; Detector also has high black matrix responsiveness and black matrix detectivity; Have good performance uniformity, be suitable for developing extensive infrared detector focal plane array; Because the integrated circuit technology of the manufacture craft of detector and silicon is compatible fully, and available diameter 75cm or larger sized silicon wafer to manufacture can have high rate of finished products, its cost is far away than compound semiconductor detector to be cheap, has the superior ratio of performance to price again.
The preparation technology of the SiGe/Si heterojunction inner emitting infrared detector of the present invention's design is as follows:
1, thermal oxidation generates SiO on the silicon egative film 2Layer, thickness is 7000 dusts-10000 dusts.
2, at SiO 2Square ring-type boron diffusion window, i.e. p among the figure are left in last photoetching +The district, this p +The width in district is 6 ± 2 μ m.Carry out boron diffusion in the p district, square resistance is controlled to be 10-20 Ω/, junction depth 2 ± 0.1 μ m.
3, at P +Distinguish and make the light phosphorous diffusion of square ring-type district in the peripheral institute area surrounded by lithography, i.e. n district among the figure, the width of this annulus is 6 ± 2 μ m; Carry out light phosphorous diffusion in the n district, square resistance is controlled to be 450-500 Ω/, junction depth 1 ± 0.1 μ m.
4, make dense phosphorous diffusion district n+ by lithography at n district upside, figure bend part; Carry out dense phosphorous diffusion in the n+ district, square resistance is controlled to be 4-6 Ω/, junction depth 1 ± 0.1 μ m.
5, the middle section at figure makes photosensitive area G by lithography, i.e. infrared acquisition window, part shown in the dotted line among the figure.In this district with the molecular beam epitaxial method Si that grows 1-xGe xAlloy material, control x value: 0.45≤x≤0.55, thickness are the 100-120 dust, and p type doped source is B 2O 3, p type doping content is 10 20/ cm 3The order of magnitude.The SiGe alloy beyond the G district is removed in photoetching.
6, with PECVD method low temperature deposition SiO 2Layer, thickness is the 7000-10000 dust, deposition temperature is not higher than 400 ℃.
7, lithography fair lead C and C '.
8, AM aluminum metallization film, thickness are 2.2 ± 0.3 μ m; Anti-carve electrode A l alloying, temperature 450-500 ℃.
9, low temperature deposition passivation deielectric-coating, this film can adopt SiO 2Or Si 3N 4
10, photoetching pressure welding point; Pressure welding, encapsulation promptly get required Infrared Detectors.
Fig. 1 is the structure domain of this Infrared Detectors.
Fig. 2 is in B-B place cut-away view among Fig. 1.
Number in the figure: p+ is the boron diffusion district, and n is light phosphorous diffusion district, and n+ is dense phosphorous diffusion district, and G is the photosensitive area.
C and C ' are fairlead, and T is an electrode.
Embodiment:
Silicon egative film: Si (100), P type, resistivity 10-20 Ω-cm, polished silicon wafer.
1, thermal oxidation generates SiO on the silicon egative film 2Layer, thickness 8000 dusts.
2, at SiO 2Square ring-type boron diffusion window, i.e. p in the accompanying drawing are left in last photoetching +The district, this distinguishes left and right sides outside width 86 μ m, inboard width 74 μ m, promptly the wide of ring is 6 μ m.At p +The district carries out boron diffusion, and square resistance is 15 Ω/, junction depth 2 μ m.
3, at P +Make the light phosphorous diffusion of square ring-type district by lithography in the district inner rim institute area surrounded, i.e. n district among the figure, this district's outside width is 62 μ m, and inboard width is 50 μ m, and promptly the wide of its ring is 6 μ m; Carry out light phosphorous diffusion in this n district, square resistance is 500 Ω/, and junction depth is 1 μ m.
4, making dense phosphorous diffusion district n+ by lithography at n district upper portion, is part shown in the oblique line among the figure.Carry out dense phosphorous diffusion in the n+ district, square resistance is 5 Ω/, and junction depth is 1 μ m.
5, make square photosensitive area G by lithography in the middle section of figure, its width is 56 μ m, window shown in dotted portion among the figure.In this district with the molecular beam epitaxial method Si that grows 1-xGe xAlloy material, control x=0.48, the thickness 110 Izod right sides, p type doped source is B 2O 3, p type doping content is 10 20/ cm 3The order of magnitude.The SiGe alloy beyond the G district is removed in photoetching.
6, PECVD method low temperature deposition SiO 2Layer, thickness 8000 dusts, deposition temperature are not higher than 400 ℃.
7, lithography fair lead C and C '.
8, AM aluminum metallization film, thickness 2 μ m; Anti-carve the Al electrode; The Al alloying, 480 ℃ of temperature, 15 minutes.
9, deposit passivation deielectric-coating Si 3N 4
10, photoetching pressure welding point; Pressure welding, encapsulation promptly get required SiGe/Si heterojunction inner emitting infrared detector, and its service band is 3-5 μ m, and working temperature 80K reaches as high as 105K.

Claims (3)

1, photoelectric emission Infrared Detectors in a kind of SiGe/Si heterojunction, by silicon substrate film, and silicon substrate film on the SiO that makes 2Floor, boron diffusion district, light phosphorous diffusion district, dense phosphorous diffusion district, infrared acquisition window and electrode are formed, and it is characterized in that the infrared acquisition window adopts the Si of molecular beam epitaxial growth 1-xGe x/ Si heterojunction material; Alloy Si 1-xGe xIn, 0.45≤x≤0.55, thickness is the 100-120 dust, p type doped source is B 2O 3, p type doping content is 10 20/ cm 3The order of magnitude.
2, Infrared Detectors according to claim 1 is characterized in that the SiO that thermal oxidation generates on the silicon substrate film 2Layer thickness is the 7000-10000 dust; At SiO 2Layer glazing is carved with a square ring-type boron diffusion window p +The district, p +The width of Qu Huan is 6 ± 2 μ m, and the square resistance in boron diffusion district is 10-20 Ω/, junction depth 2 ± 0.1 μ m; At p +The area surrounded photoetching of circumference institute has the light phosphorous diffusion of square ring-type district n in the district, and the width of this n district ring is 6 ± 2 μ m, and light phosphorous diffusion district square resistance is 450-550 Ω/, junction depth 1 ± 0.1 μ m; In the upside place photoetching of n district dense phosphorous diffusion district n is arranged +, the square resistance in dense phosphorous diffusion district is 4-6 Ω/, junction depth 1 ± 0.1 μ m; Centre photoetching at figure has a square photosensitive area G, by molecular beam epitaxial growth Si is arranged in G 1-xGe xAlloy; At p+ district and leaded hole C of n+ district photoetching and C '; Locate to be manufactured with aluminium electrode T at C and C ', thickness 2.2 ± 0.3 μ m; Also be deposited with the dielectric layer that passivation is used in the above.
3, the preparation method of photoelectric emission Infrared Detectors in a kind of SiGe/Si heterojunction is characterized in that concrete processing step is as follows:
(1) thermal oxidation generates SiO on the silicon egative film 2Layer, thickness is 7000 dusts-10000 dusts;
(2) at SiO 2A square ring-type boron diffusion window p is left in last photoetching +The district, this p +The width in district is 6 ± 2 μ m, at p +The district carries out boron diffusion, and square resistance is controlled to be 10-20 Ω/, junction depth 2 ± 0.1 μ m;
(3) at p +Make the light phosphorous diffusion of square ring-type district n by lithography in the district inner rim institute area surrounded, the width on the limit in this district is 6 ± 2 μ m; Carry out light phosphorous diffusion in the n district, square resistance is controlled to be 450-500 Ω/, junction depth 1 ± 0.1 μ m;
(4) make dense phosphorous diffusion district n by lithography at n district upside +, at n +The district carries out dense phosphorous diffusion, and the control square resistance is 4-6 Ω/, junction depth 1 ± 0.1 μ m;
(5) in light phosphorous diffusion district n, make photosensitive area G by lithography, in this district with the molecular beam epitaxial method Si that grows 1-xGe xAlloy material, control x value: 0.45≤x≤0.55, thickness are the 100-120 dust, and p type doped source is B 2O 3, p type doping content is 10 20/ cm 3The order of magnitude;
(6) PECVD method low temperature deposition SiO 2Layer, thickness is the 7000-10000 dust;
(7) lithography fair lead C and C ';
(8) AM aluminum metallization electrode, thickness 2.2 ± 0.3 μ m; Anti-carve Al alloying, temperature 450-500 ℃;
(9) deposit passivation deielectric-coating;
(10) photoetching pressure welding point; Pressure welding, encapsulation promptly get required Infrared Detectors.
CNB011132043A 2001-06-29 2001-06-29 Inner emitting infrared detector with 3-5 micron Si-Ge/Si heterojunction and its prepn Expired - Fee Related CN1137521C (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100349299C (en) * 2003-01-16 2007-11-14 中国科学院半导体研究所 Planar array device of large-scale photoelectric integrated RCE detector
CN100387509C (en) * 2005-08-11 2008-05-14 中国科学院微电子研究所 Manufacturing method for improving performance of uncooled infrared focal plane array device
CN100396593C (en) * 2005-06-23 2008-06-25 中国科学院微电子研究所 Method for manufacturing single-layer bi-material micro-cantilever thermal isolation focal plane array
CN102376813A (en) * 2010-08-24 2012-03-14 中国科学院微电子研究所 Uncooled infrared detector and manufacturing method thereof
CN103985788A (en) * 2014-05-21 2014-08-13 中国科学院上海微系统与信息技术研究所 Tensile strained germanium MSM photoelectric detector and manufacturing method thereof
CN105762220A (en) * 2014-12-01 2016-07-13 卢克斯特拉有限公司 Method and system for germanium-on-silicon photodetectors without germanium layer contacts
CN105789347A (en) * 2016-03-02 2016-07-20 西安电子科技大学 GeSn-GeSi material based heterogeneous phototransistor and fabrication method thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100349299C (en) * 2003-01-16 2007-11-14 中国科学院半导体研究所 Planar array device of large-scale photoelectric integrated RCE detector
CN100396593C (en) * 2005-06-23 2008-06-25 中国科学院微电子研究所 Method for manufacturing single-layer bi-material micro-cantilever thermal isolation focal plane array
CN100387509C (en) * 2005-08-11 2008-05-14 中国科学院微电子研究所 Manufacturing method for improving performance of uncooled infrared focal plane array device
CN102376813A (en) * 2010-08-24 2012-03-14 中国科学院微电子研究所 Uncooled infrared detector and manufacturing method thereof
CN103985788A (en) * 2014-05-21 2014-08-13 中国科学院上海微系统与信息技术研究所 Tensile strained germanium MSM photoelectric detector and manufacturing method thereof
CN105762220A (en) * 2014-12-01 2016-07-13 卢克斯特拉有限公司 Method and system for germanium-on-silicon photodetectors without germanium layer contacts
CN105762220B (en) * 2014-12-01 2019-11-29 卢克斯特拉有限公司 The method and system of germanium on silicon photodetector for the contact of no germanium layer
CN105789347A (en) * 2016-03-02 2016-07-20 西安电子科技大学 GeSn-GeSi material based heterogeneous phototransistor and fabrication method thereof

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