CN1320174C - Susceptor with epitaxial growth control devices and epitaxial reactor using the same - Google Patents
Susceptor with epitaxial growth control devices and epitaxial reactor using the same Download PDFInfo
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- CN1320174C CN1320174C CNB028174747A CN02817474A CN1320174C CN 1320174 C CN1320174 C CN 1320174C CN B028174747 A CNB028174747 A CN B028174747A CN 02817474 A CN02817474 A CN 02817474A CN 1320174 C CN1320174 C CN 1320174C
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- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000007789 gas Substances 0.000 claims abstract description 18
- 239000000376 reactant Substances 0.000 claims description 16
- 239000000725 suspension Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 239000003630 growth substance Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A susceptor (1) for epitaxial growth reactors comprises a body (2) having a lower base (3), an upper top (4) and some substantially flat side faces (5); the side faces are adapted to receive, in predetermined areas (6), substrates on which the epitaxial growth develops; body (2) is provided with edge side regions (7) defined by couples of adjacent side faces (5); along edge side regions (7) in the upper part of body (2) there are provided first ribs (8) adapted to control the flow of reaction gases along side faces (5); along edge side regions (7) in the lower part of body (2) there are provided second ribs (9) adapted to control the flow of reaction gases along side faces (5).
Description
Technical field
The present invention relates to susceptor that a kind of epitaxial growth reaction device uses and the epitaxial reactor that uses this susceptor.
Background technology
In the epitaxial reactor field that is used for microelectronics industry, be illustrated in the epitaxial process with term " susceptor ", can lay the thermal barrier that is subjected to of one or more substrates; This carrier utilizes its susceptance to be heated usually; Even otherwise, for example, in the reactor by the lamp heating, this carrier is still keeping the name of " susceptor " usually.The present invention is not subjected to the restriction of heating means.
The epitaxy susceptor can be divided into two big classes: a kind of is in epitaxial process, and substrate is positioned at the position of level substantially, and a kind of is in epitaxial process, and substrate is positioned at vertical substantially position (usually from the vertical direction several years).The present invention is applied to second type susceptor.
With reference to figure 5, such susceptor comprises the main body 2 of the side 5 with lower bottom part 3, upper top 4 and some flat; Side 5 is adapted at prospective region 6 and is accepted thereon and carries out epitaxially grown substrate; Main body 2 is provided with the edge side regions (edge side regions) 7 that is limited by paired (couples of) adjacent side 5.Main body 2 is a pyramidal shape, perhaps, is more typically truncated pyramid-shaped, for example, lower bottom part 3 is a heptagon, and upper top 4 also is a heptagon, and just size is littler than lower bottom part 3, side 5 is substantially similar rectangle, and thus, edge side regions 7 is substantially similar trilateral; Be substantially under the similar trapezoid situation in side 5, edge side regions 7 just is real edge.A kind of reactor with susceptor of truncated pyramid-shaped is known, for example, can know in 215,444 from the italian patent No.1 of application in 1987.
As shown in Figure 5, this susceptor is supported several substrates usually on each side, and a substrate is vertically set on another and suitably separates above substrate and each other, and the quantity of substrate depends on their diameter.
As well known in the art, susceptor is set in the Bell jar of being made by quartz; Reactant gases is injected in the described Bell jar; Reactant gases allows and has determined growth on the substrate exposure along flow (substrate is set at herein) of side 5; Obviously, there are many parameter influences described growth.
The quality of growth substance and well-balanced degree are very important for microelectronics industry is used the substrate handle like this, its by along the side 5 of susceptor, therefore also be well-balanced degree and homogeneity effect of altitude along the reactant gas flow of substrate.Therefore, must carefully control this flowing.
Past, existing patent application once applied for proposing foregoing, for example, italian patent No.1 application in 1989, the No.1 of application in 231,547 and 1992 years, 261, among the disclosures in Italian patent application No.MI99A000607 that 886 and 1999 years submit to, use along first rib (ribs) of edge side regions setting and with this and control flowing along lateral reactant gases.
(in 1989) at first propose such rib is extended to bottom part body from the main body top, and (from 1992 so far) afterwards in the execute phase from the theory to reality, preferably is limited to their extension the top of main body; This is owing to two reasons: the envrionment conditions in the useless and reaction chamber in supposition rib bottom can cause the rib distortion, and this distortion is directly proportional with its length.
Recently, in order to make microelectronic device, be extensive use of very area (several millimeters) gradually near its edge.
Can find that from the measurement that realizes if these also are considered near the zone at its edge very much, it is poor more, particularly, all the more so from the nearest substrate of lower bottom part to those that the homogeneity of growth substance will become.
In a word, having proved above-mentioned common notion---rib is extended downwards more longways, and for example, it is not effective extending to lower bottom part; In fact, the prolongation of rib causes being grown in the increase of the material thickness in proximate edge and rib zone, but for example then can cause worsening in the zone of proximate edge away from rib.
Summary of the invention
The object of the invention is to compare with the way in past, solves the thickness evenness problem of epitaxial growth substrate better.
In order to address this problem, the present invention proposes a kind of susceptor that is used for the epitaxial growth reaction device, comprise a main body, it has a lower bottom part, the side of one upper top and some flat, described side is suitable for being accepted thereon in prospective region carries out epitaxially grown substrate, and be provided with the edge side regions that limits by paired adjacent side, wherein, on main body top, be provided with mobile first rib that is suitable for controlling along lateral reactant gases along described edge side regions, it is characterized in that:, be provided with mobile second rib that is suitable for controlling along lateral reactant gases along described edge side regions in lower body part.
Use with first rib and separate and separate and second rib that is set at the susceptor lower body part has significantly improved the thickness evenness of epitaxial growth substrate, particularly in the zone of edges of substrate.
If necessary, also can provide other rib at the centre portions of substrate body.According on the other hand, the present invention also provides a kind of epitaxial reactor that comprises at least one reaction chamber, wherein is provided with the susceptor of at least one above-mentioned feature in one or each reaction chamber.
The invention provides a kind of susceptor, wherein, described first rib and/or second rib are made up of bar or paired.
The invention provides a kind of susceptor, wherein,, be provided with mobile at least the three rib that is suitable for controlling along lateral reactant gases along described edge side regions at the centre portions of main body.
The invention provides a kind of susceptor, wherein, described first rib and/or second rib and/or the 3rd rib are made up of bar or paired.
The invention provides a kind of susceptor, wherein, one or each bar are provided with a suspension hook or a tooth at first end, and preferably are provided with a centering pin at second end, and wherein, one or each bar adhere to by described suspension hook or tooth and are fixed on the described main body.
The invention provides a kind of susceptor, wherein, one or each bar also adhere to by described pin and are fixed on the described main body.
The invention provides a kind of susceptor, wherein, one or each bar are provided with a groove in a side of the main body of tendency susceptor.
The invention provides a kind of susceptor, wherein, described first rib extends to corresponding to one about described area from the height corresponding to the top of about main body, particularly near the height at the center in the zone at the top of main body.
The invention provides a kind of susceptor, wherein, second rib is from corresponding to one about described area, particularly near the terminal height of going up in the zone of the bottom of main body, extends to the height corresponding to the bottom of about main body.
The invention provides a kind of susceptor, wherein, described first rib is outstanding from main body with first quantity, and wherein, described second rib is outstanding from main body with second quantity.
The invention provides a kind of susceptor, wherein, described the 3rd rib is outstanding from main body with the 3rd quantity.
Description of drawings
In conjunction with the accompanying drawings, following explanation can make the present invention become clearer, wherein:
Fig. 1 has shown the reaction chamber according to epitaxial reactor of the present invention,
Fig. 2 has shown the partial cross section figure of the horizontal plane A-A of chamber in Fig. 1,
Fig. 3 has shown the partial cross section figure of the horizontal plane B-B of chamber in Fig. 1,
Fig. 4 has shown the susceptor that is provided with two groups of ribs according to the present invention,
Fig. 5 has shown not with ribbing susceptor main body among Fig. 4,
Fig. 6 has shown the article one that is used for susceptor according to the present invention, and
Fig. 7 has shown the second that is used for susceptor according to the present invention.
Embodiment
With reference to above-mentioned accompanying drawing, particularly Fig. 4 and Fig. 5, comprise a main body 2 according to the susceptor 1 of epitaxy susceptor of the present invention, it has the side 5 of lower bottom part 3, upper top 4 and some flat; Side 5 suitable being accepted thereon with prospective region 6 are carried out epitaxially grown substrate; Main body 2 is provided with the edge side regions 7 that is limited by paired adjacent side 5; Along edge side regions 7, be provided with first rib 8 on the top of main body 2, it is suitable for controlling along the side flowing of 5 reactant gases; In addition, still along edge side regions 7, but be provided with second rib 9 in the bottom of main body 2, it is suitable for controlling along the side flowing of 5 reactant gases.
Therefore, second rib 9 is separated and separates aptly with first rib 8, and the thickness that is grown in the material in proximate edge and rib zone with raising is set by this way, but can not worsen the thickness that is grown in other local material significantly simultaneously.
If necessary, particularly, if every substrate quantity is very big, at the centre portions of main body 2, along edge side regions 7 provide 2 the 3rd (and, under the situation if desired, more) rib, 5 the mobile of reactant gases is favourable along the side to make it to be fit to control; Therefore they separate with second rib 9 and separate aptly with first rib 8.
Rib has been limited the fact of length, except giving better flow control, has also reduced the problem of above-mentioned rib distortion; In fact, if rib has been out of shape (mainly being because the temperature in the reaction chamber is very high), the effect meeting of reactant gas flow along with the time changes, therefore, with needed opposite, is difficult to predict this effect.
According to its simplest but still effective embodiment, such rib can be made up of bar; Each bar is set at central authorities along edge side regions 7.
Alternatively, such rib can be made up of paired (strip); In pairs the article one in the bar along the first edge setting of side regions 7 and in pairs the second in the bar along the second edge setting in zone, same side 7.
Preferably use with susceptor main body identical materials and make rib, the graphite that it covers for silicon carbide; The quartz that uses silicon carbide to cover is unadvisable, because can bring problem when cleaning described; In fact, during repeating epitaxial growth reaction, need routine cleaning to fall to be deposited on their own top materials.
Although to rib and susceptor main body use identical materials is favourable, preferably they flow to rib to limit heat from main body for distinct portions; In fact, if rib promotes the heating of substrate considerablely, inhomogeneous just inevitable.
If bar is attached on the susceptor main body, bar can have a suspension hook 11 or the such mode moulding of a tooth 12 at first end, and as clear show the same in Fig. 6 and Fig. 7, hook or tooth are feasible can be fixed in the susceptor main body; In addition, preferably at second end, bar is provided with centering pin 13, and when susceptor rotated in reaction chamber, this centering pin can be avoided the vibratory movement of bar.
Obviously, be necessary for suspension hook, tooth and pin on the susceptor main body suitable hole or suitable groove are provided: this knows in the section that is presented at Fig. 4 and Fig. 5 left side.
For further restriction heat flows to bar from main body, bar can be provided with a groove 14 in a side of tendency susceptor main body; Greatly having limited the bar surface by this way contacts with main body.
As having emphasized, for reaching desired effect, the layout of rib is extremely important.
Have been found that by experiment when first rib 8 to extend to corresponding to one about area 6, during particularly near the height at the center of the regional 6a at the top 4 of main body 2, can obtain good result from height corresponding to the top 4 of about main body 2.
As for second rib 9, have been found that by experiment when second rib 9 from corresponding to one about area 6, particularly near the terminal height of going up of the regional 6b of the bottom 3 of main body 2, when extending to the height corresponding to the bottom 3 of about main body 2, can obtain good result.
As for the 3rd rib, it can be set on all side regions 7, for example, just in time becomes delegation (perhaps becoming delegation with its first half) alignment with one in the area 6; By this way, they help to control mobile certain part of optionally crossing side 5 of reactant gases.
Except described layout, it is also important that the selection of rib size, particularly their protuberances on the susceptor main body; Incidentally, has certain proportion between the thickness of protuberance and growth substance.
In order to control flowing of reactant gases better, first rib 8 with first quantity from main body 2 outstanding and second rib 9 outstanding with second quantity from main body 2 be favourable; Naturally, first quantity and second quantity can be inequality.
For the protuberance size there being a notion, can be so briefly, high and have for the susceptor of about 350mm diameter foot for about 500mm, measured protuberance is 1mm-10mm.
Under the situation of using the 3rd rib, it can be outstanding with the 3rd quantity from main body 2, and the 3rd quantity also can be all different with second quantity with first quantity.
According to another aspect, the present invention relates to a kind of epitaxial reactor that comprises at least one reaction chamber, wherein be provided with at least one susceptor with above-mentioned feature 1.
Fig. 1 has shown a kind of reaction chamber according to epitaxial reactor of the present invention with section; From figure, can in other parts, distinguish out Bell jar 10 and the susceptor 1 that is arranged in the Bell jar 10.
Fig. 2 has shown the partial cross section figure of the horizontal plane A-A of chamber in Fig. 1, and section is limited to Bell jar and susceptor.
Fig. 3 has shown the partial cross section figure of the horizontal plane B-B of chamber in Fig. 1, and section is limited to Bell jar and susceptor.
Claims (15)
1. susceptor (1) that is used for the epitaxial growth reaction device, comprise a main body (2), it has a lower bottom part (3), the side (5) of one upper top (4) and some flat, described side (5) is suitable for being accepted thereon in prospective region (6) carries out epitaxially grown substrate, and be provided with the edge side regions (7) that limits by paired adjacent side (5), wherein, on main body top, be provided with mobile first rib (8) that is suitable for control reactant gases of (5) along the side along described edge side regions (7), it is characterized in that:, be provided with mobile second rib (9) that is suitable for control reactant gases of (5) along described edge side regions (7) along the side in lower body part.
2. susceptor as claimed in claim 1, wherein, described first rib (8) and/or second rib (9) are made up of bar or paired.
3. susceptor as claimed in claim 1 wherein, at the centre portions of main body, is provided with mobile at least the three rib that is suitable for control reactant gases of (5) along the side along described edge side regions (7).
4. susceptor as claimed in claim 3, wherein, described first rib (8) and/or second rib (9) and/or the 3rd rib are made up of bar or paired.
5. as claim 2 or 4 described susceptors, wherein, one or each bar are provided with a suspension hook (11) or a tooth (12) at first end, and wherein, and one or each bar adhere to by described suspension hook (11) or tooth (12) and be fixed on the described main body (2).
6. susceptor as claimed in claim 5, wherein, one or each bar provide a centering pin (13) in second end.
7. susceptor as claimed in claim 5, wherein, one or each bar are provided with a groove (14) in a side of the main body (2) of tendency susceptor (1).
8. susceptor as claimed in claim 6, wherein, one or each bar also adhere to by described pin (13) and are fixed on the described main body (2).
9. as arbitrary described susceptor among the claim 1-4, wherein, described first rib (8) extends to height corresponding to the center in a zone the described area (6) from the height corresponding to the top (4) of main body (2).
10. as arbitrary described susceptor among the claim 1-4, wherein, second rib (9) extends to the height corresponding to the bottom (3) of main body (2) from the terminal height of going up corresponding to a zone the described area (6).
11. as arbitrary described susceptor among the claim 1-4, wherein, described first rib (8) is outstanding from main body with first quantity, and wherein, described second rib (9) is outstanding from main body with second quantity.
12. as claim 3 or 4 described susceptors, wherein, described the 3rd rib is outstanding from main body with the 3rd quantity.
13. an epitaxial reactor that comprises at least one reaction chamber wherein, is provided with the susceptor (1) described at least one arbitrary as described above claim in one or each reaction chamber.
14. susceptor as claimed in claim 9, wherein, a described zone is near the zone (6a) at the top (4) of main body (2).
15. susceptor as claimed in claim 10, wherein, a described zone is near the zone (6b) of the bottom (3) of main body (2).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT2001MI001881A ITMI20011881A1 (en) | 2001-09-07 | 2001-09-07 | SUCCESSORS EQUIPPED WITH EPITAXIAL GROWTH CONTROL DEVICES AND EPITAXIAL REACTOR THAT USES THE SAME |
| ITMI2001A001881 | 2001-09-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1551932A CN1551932A (en) | 2004-12-01 |
| CN1320174C true CN1320174C (en) | 2007-06-06 |
Family
ID=11448343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028174747A Expired - Lifetime CN1320174C (en) | 2001-09-07 | 2002-09-05 | Susceptor with epitaxial growth control devices and epitaxial reactor using the same |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US7153368B2 (en) |
| EP (1) | EP1423558B1 (en) |
| JP (1) | JP2005503009A (en) |
| KR (1) | KR20040045433A (en) |
| CN (1) | CN1320174C (en) |
| AT (1) | ATE325207T1 (en) |
| AU (1) | AU2002339537A1 (en) |
| DE (1) | DE60211181T2 (en) |
| ES (1) | ES2262853T3 (en) |
| IT (1) | ITMI20011881A1 (en) |
| WO (1) | WO2003023093A2 (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ITMI20031841A1 (en) * | 2003-09-25 | 2005-03-26 | Lpe Spa | SUSCECTOR FOR INDUCTION EPITAXIAL REACTORS. |
| US9441295B2 (en) * | 2010-05-14 | 2016-09-13 | Solarcity Corporation | Multi-channel gas-delivery system |
| US8986451B2 (en) * | 2010-05-25 | 2015-03-24 | Singulus Mocvd Gmbh I. Gr. | Linear batch chemical vapor deposition system |
| US9169562B2 (en) | 2010-05-25 | 2015-10-27 | Singulus Mocvd Gmbh I. Gr. | Parallel batch chemical vapor deposition system |
| US9869021B2 (en) | 2010-05-25 | 2018-01-16 | Aventa Technologies, Inc. | Showerhead apparatus for a linear batch chemical vapor deposition system |
| JP4676567B1 (en) * | 2010-07-20 | 2011-04-27 | 三井造船株式会社 | Semiconductor substrate heat treatment equipment |
| KR101384430B1 (en) * | 2012-01-12 | 2014-04-10 | 주식회사 엘지실트론 | Epitaxial reactor and temperature sensor for the same |
| US9972740B2 (en) | 2015-06-07 | 2018-05-15 | Tesla, Inc. | Chemical vapor deposition tool and process for fabrication of photovoltaic structures |
| US9748434B1 (en) | 2016-05-24 | 2017-08-29 | Tesla, Inc. | Systems, method and apparatus for curing conductive paste |
| US9954136B2 (en) | 2016-08-03 | 2018-04-24 | Tesla, Inc. | Cassette optimized for an inline annealing system |
| US10115856B2 (en) | 2016-10-31 | 2018-10-30 | Tesla, Inc. | System and method for curing conductive paste using induction heating |
| CN106906455A (en) * | 2017-03-30 | 2017-06-30 | 河北普兴电子科技股份有限公司 | The trapezoidal pedestal of silicon epitaxial reaction cavity |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4638762A (en) * | 1985-08-30 | 1987-01-27 | At&T Technologies, Inc. | Chemical vapor deposition method and apparatus |
| EP0415191A1 (en) * | 1989-08-31 | 1991-03-06 | Lpe Spa | System for controlling epitaxial grow rate in vertical provided with a frustum pyramid susceptor |
| WO2000058533A1 (en) * | 1999-03-25 | 2000-10-05 | Lpe Spa | Reaction chamber for an epitaxial reactor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4579080A (en) * | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
| IT1215444B (en) | 1987-04-24 | 1990-02-14 | L P E S P A | REFINEMENTS FOR INDUCTORS AND SUSCEPTERS THAT CAN BE USED IN EPITAXIAL REACTORS. |
| JPH02212393A (en) | 1989-02-10 | 1990-08-23 | Sumitomo Electric Ind Ltd | Vapor growth method and its device |
| IT1261886B (en) | 1992-06-30 | 1996-06-03 | Lpe | Improved methods of control of epitaxial speed of growth in vertical reactors with rotating susceptors |
| WO1997041276A1 (en) * | 1996-05-02 | 1997-11-06 | Rama Venkatasubramanian | Low temperature chemical vapor deposition and etching apparatus and method |
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2001
- 2001-09-07 IT IT2001MI001881A patent/ITMI20011881A1/en unknown
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2002
- 2002-09-05 JP JP2003527151A patent/JP2005503009A/en active Pending
- 2002-09-05 US US10/488,343 patent/US7153368B2/en not_active Expired - Fee Related
- 2002-09-05 WO PCT/EP2002/010043 patent/WO2003023093A2/en active IP Right Grant
- 2002-09-05 DE DE60211181T patent/DE60211181T2/en not_active Expired - Lifetime
- 2002-09-05 KR KR10-2004-7003408A patent/KR20040045433A/en not_active Application Discontinuation
- 2002-09-05 AT AT02777038T patent/ATE325207T1/en not_active IP Right Cessation
- 2002-09-05 AU AU2002339537A patent/AU2002339537A1/en not_active Abandoned
- 2002-09-05 CN CNB028174747A patent/CN1320174C/en not_active Expired - Lifetime
- 2002-09-05 EP EP02777038A patent/EP1423558B1/en not_active Expired - Lifetime
- 2002-09-05 ES ES02777038T patent/ES2262853T3/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4638762A (en) * | 1985-08-30 | 1987-01-27 | At&T Technologies, Inc. | Chemical vapor deposition method and apparatus |
| EP0415191A1 (en) * | 1989-08-31 | 1991-03-06 | Lpe Spa | System for controlling epitaxial grow rate in vertical provided with a frustum pyramid susceptor |
| WO2000058533A1 (en) * | 1999-03-25 | 2000-10-05 | Lpe Spa | Reaction chamber for an epitaxial reactor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE60211181D1 (en) | 2006-06-08 |
| ITMI20011881A1 (en) | 2003-03-07 |
| ITMI20011881A0 (en) | 2001-09-07 |
| EP1423558A2 (en) | 2004-06-02 |
| CN1551932A (en) | 2004-12-01 |
| WO2003023093A2 (en) | 2003-03-20 |
| ATE325207T1 (en) | 2006-06-15 |
| ES2262853T3 (en) | 2006-12-01 |
| AU2002339537A1 (en) | 2003-03-24 |
| US7153368B2 (en) | 2006-12-26 |
| JP2005503009A (en) | 2005-01-27 |
| WO2003023093A3 (en) | 2003-12-11 |
| KR20040045433A (en) | 2004-06-01 |
| EP1423558B1 (en) | 2006-05-03 |
| US20050005858A1 (en) | 2005-01-13 |
| DE60211181T2 (en) | 2007-02-22 |
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