CN1320147C - Preparation of nickel-barium titanate high-permittivity composite material using nitrogen protection and preparing process thereof - Google Patents

Preparation of nickel-barium titanate high-permittivity composite material using nitrogen protection and preparing process thereof Download PDF

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CN1320147C
CN1320147C CNB2005100614540A CN200510061454A CN1320147C CN 1320147 C CN1320147 C CN 1320147C CN B2005100614540 A CNB2005100614540 A CN B2005100614540A CN 200510061454 A CN200510061454 A CN 200510061454A CN 1320147 C CN1320147 C CN 1320147C
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barium titanate
preparation
nitrogen protection
sintering
specific inductivity
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CN1752253A (en
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杜丕一
黄集权
韩高荣
翁文剑
宋晨路
沈鸽
赵高凌
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Zhejiang University ZJU
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Abstract

The present invention discloses a high-dielectric Ni-barium titanate composite material and a preparing method thereof under nitrogen protection. The preparing method comprises the following steps: mixing 65% to 99% of barium titanate and 1% to 35% of metal Ni measured by volume percentage content; grinding the mixture for 1 to 5 hours; pressing and shaping the mixture at pressure of 2 to 10MPa; preparing the ceramic material in a Ni environment. The present invention is simple in formula, and the obtained ceramic material has the advantages of high dielectric constant (10000 to 80000 at 1KHz), small grain size of barium titanate, excellent temperature stability, low cost and good market prospect. The change rate (epsilon125 to epsilon25)/epsilon25 of the dielectric constant following a temperature at 30 to 170 DEG C is between 7% and 25%. Additionally, pure N2 gas which is cheap and safe is used as a sintering atmosphere to avoid the possible danger brought by the introduction of explosive gas (H2).

Description

High Jie's matrix material of Ni-Ti acid barium of nitrogen protection preparation and preparation method thereof
Technical field
The present invention relates to the dielectric ceramic technical field, specially refer to high Jie's matrix material of Ni-Ti acid barium of a kind of nitrogen protection preparation and preparation method thereof.
Background technology
In recent years, developing rapidly of power industry and electronic information industry promotes electronic devices and components to miniaturization, integrated, high reliability and cheaply direction develop.In the ceramic condenser field, miniaturization, heavy body and good temperature stability have become inevitable development trend.As laminated ceramic capacitor (MLCC) is exactly a kind of new texture of realizing the jumbo requirement design of small volume in order to reach.And for further raising capacity with reduce volume, along with preparation technology's development, MLCC is also more towards the number of plies, that medium layer is thinner, and direction develops.Yet, also more and more higher along with the continuous development of science and technology to the requirement of high dielectric constant material, because electric capacity is directly proportional with the specific inductivity of ceramic dielectic, improve heavy body and the miniaturization of specific inductivity with easier realization device.In addition, in order to reach enough good insulating property, with regard to MLCC, the thickness of the ceramic dielectric layer between adjacent two electrodes is at least about 10 times of grain-size, that is the thickness of medium layer can not unlimitedly reduce.In this case, improving the specific inductivity of stupalith, is very necessary.
Seepage theory provides a kind of thinking for the preparation high-k dielectric materials.Usually, in order to obtain high-k, people often adopt the barium titanate based ceramic material, and add Nb, Ta, and Mn, metal oxides such as Mg are properties-correcting agent.Yet the raising to specific inductivity still is not clearly, and technology is comparatively complicated.Seepage theory is then pointed out, in dielectric, add conductor, continuous increase along with the conductor content that is added, compound system turns to conductor from isolator gradually, and this isolator-conductor transformation is a kind of mutation process, the trace that is the volume fraction of conductor increases, and just can make the specific conductivity of compound system that the variation of some orders of magnitude takes place.Usually, the volume fraction of the conductive phase that contained in the system when realizing that isolator-conductor changes of people calls the seepage flow threshold value.When the volume content of conductor was near the seepage flow threshold value, non-linear enhancing also can take place in the specific inductivity of material.Specific inductivity with the variation of conductor volume content can be with the seepage flow formulate: ε=ε 0| f c-f| -q, in the formula, f cBe the seepage flow threshold value of conductor, f is the volume fraction of conductor, ε 0Be the specific inductivity of insulating body, ε is the specific inductivity of compound system, and q then is a critical exponent of seepage flow system.From this formula as seen, as the volume fraction f<f of conductor cAnd f → f cThe time, conductor-isolator compound system just can obtain the specific inductivity than high times of dielectric substrate.Research for this dielectric materials based on seep effect, can be divided into organic radical and ceramic base two big classes: for the organic radical material, the normal dielectric matrix that adopts has PVDF, PTFE etc., its advantage is without sintering, therefore technology is comparatively simple, but shortcoming is the often lower and non-refractory of specific inductivity of organic matrix, thereby the composite diphase material specific inductivity of preparation is low with respect to ceramic based materials such as barium titanates, and can not be applied to hot conditions, application is subject to certain restrictions.For ceramic based material, research is less at present, people such as Carlos Pecharrom á n in calendar year 2001 at Advanced Materials (Carlos Pecharrom á n, F.Esteban-Betegon, et al., Advanced Materials 13 (20) (2001), publish an article on P1541-1544), successfully at reducing atmosphere (90%Ar/10%H 2) (when temperature is lower than 500 ℃) and protective atmosphere (Ar, 500 ℃~1300 ℃) sintering prepared the Ni-BaTiO with ultra-high dielectric coefficient 3Matrix material; People such as Renzheng Chen are at Ceramics International (R.Z.Chen, X.H.Wang, H.Wen, et al., Ceramics International 30 (2004), delivered with nanometer Ni (granularity is about 50nm) and nanometer BaTiO on P1271-1274.) 3(granularity is 100nm) is raw material, and adds MgO and some rare earth oxides, prepared Ni-BaTiO at 1300 ℃ of sintering of reducing atmosphere (90%Ar/10%H2) equally 3Matrix material, but do not obtain ultra-high dielectric coefficient.The characteristics that these materials successfully prepare all are to utilize Ar and H 2As restitutive protection's gas of reaction, solving the metal problem of stable existence at high temperature, yet reducing atmosphere is to BaTiO 3Sintering actual be disadvantageous, cause BaTiO easily 3Semiconductor.Compare with cheap nitrogen, utilize nitrogen will reduce production costs greatly, simultaneously to preventing BaTiO as the inert protective gas of reaction 3It is originally favourable relatively serious semiconductor to occur.
Summary of the invention
The object of the present invention is to provide a kind of high Jie's matrix material of Ni-Ti acid barium in nitrogen protection preparation and preparation method thereof.This material feedstock kind is few, and preparation technology is simple, and is with low cost, and dielectric properties are good, has excellent temperature stability when having ultra-high dielectric coefficient.
The technical solution used in the present invention is as follows:
1, a kind of high Jie's matrix material of Ni-Ti acid barium of nitrogen protection preparation, the composition of this material by volume percentage composition is:
Grain-size is the barium titanate 65%~99% of 100nm~400nm;
Granularity is the metal Ni 1%~35% of 40~200nm;
Represent the volumn concentration of Ni, i.e. 0.01≤f≤0.35 with f.
2, a kind of nitrogen protection prepares the preparation method of the high Jie's matrix material of Ni-Ti acid barium; the step of this method is as follows: with barium titanate and metal Ni is raw material; by volume percentage composition is 65%~99% barium titanate with after 1%~35% metal Ni mixes; ground 1~5 hour; with pressure is 2~10MPa compression moulding, and in nitrogen sintering, sintering range is 1200~1300 ℃; the temperature rise rate span of control is 100~600 ℃/h, and soaking time is controlled at 1~3h.
Adopt nitrogen to carry out sintering for the sintering environmental gas, environmental gas airshed scope is 70~300ml/min.The stupalith for preparing, its barium titanate grain-size is 100nm~1500nm; Thereby cause material to have good temperature stability, between 30~170 ℃, the velocity of variation (ε of dielectric constant with temperature 12525)/ε 25Between 7%~25%.
The present invention compares the useful effect that has with background technology: stupalith provided by the present invention and preparation method thereof is a kind of novel stupalith system, prescription is simple, the stupalith for preparing has high-k (specific inductivity is 10000 to 80000 during 1KHz), and barium titanate grain-size little (grain-size is less than 1500nm).Undersized barium titanate crystal grain causes material to have good temperature stability, between 30~170 ℃, and the velocity of variation (ε of dielectric constant with temperature 12525)/ε 25Between 7%~25%.And sintering atmosphere is comparatively cheap and safe pure gas N 2, avoided explosion hazard gas H 2The danger that may bring of introducing, and with low cost, thereby have good market outlook.
Description of drawings
Fig. 1 is the curve of embodiment 1 in the dielectric constant with temperature variation of 1200 ℃ of agglomerating samples;
Fig. 2 is the curve of embodiment 2 in the dielectric constant with temperature variation of 1250 ℃ of agglomerating samples;
Fig. 3 is the curve of embodiment 3 in the dielectric constant with temperature variation of 1300 ℃ of agglomerating samples.
Embodiment
Embodiment 1:
Barium titanate powder and metallic nickel are mixed (the Ni volumn concentration is between 1%~35%) by the different volumes percentage composition; and in mortar, ground 1 hour; under the pressure of 10MPa, be molded into diameter then and be about 10mm; thickness is about the circular green compact of 2mm, carries out sintering in box gas shield resistance furnace.Feed nitrogen in the electric furnace and carry out sintering after 4 hours again, maintenances nitrogen flow is 250ml/min, rise to 550 ℃ with the temperature rise rate of 400 ℃/h after, rise to 1200 ℃ with the temperature rise rate of 150 ℃/h again and be incubated 3 hours, afterwards naturally cooling.The temperature spectrum of relative permittivity, dielectric loss and the specific inductivity of material is tested and calculated to sample behind the sintering 200 ℃ of following burning infiltration silver electrodes, then after surface finish.Test result sees Table 1 and accompanying drawing 1.Table 1 provides that specific inductivity and dielectric loss are with the variation relation (under the room temperature) of metal Ni volume content under the 1KHz, and accompanying drawing 1 is the specific inductivity thermogram (30 ℃~180 ℃) of part high-k sample.From table 1, when Ni volume fraction f was between 0.2~0.25, material obtained bigger specific inductivity, and when f=0.25, specific inductivity is 35000, is about 14 times with the barium titanate matrix material for preparing under the condition; When f=0.26, specific inductivity is 25700, but loss this moment is bigger, is 1.5, and is unavailable; And behind volume fraction f>0.26 of Ni, material then becomes conductor.Can find out that from accompanying drawing 1 specific inductivity of this material has good temperature stability: when temperature is between 30~170 ℃, (ε 12525)/ε 25Between 7%~12%.
The dielectric properties of table 1.1200 ℃ agglomerating sample and the relation of metal Ni volume fraction
Ni volume fraction f 0 0.01 0.15 0.2 0.22 0.24 0.25 0.26 0.30 0.35
Specific inductivity 2450 1561 2856 5982 10980 19800 35000 25700 8300 4321
Dielectric loss 0.042 0.057 0.051 0.063 0.17 0.21 0.43 1.5 21 17
Embodiment 2
Barium titanate powder and metallic nickel are mixed (the Ni volumn concentration is between 1%~35%) by the different volumes percentage composition; and in mortar, ground 3 hours; under the pressure of 5MPa, be molded into diameter then and be about 10mm; thickness is about the circular green compact of 2mm, carries out sintering in box gas shield resistance furnace.Feed nitrogen in the electric furnace and carry out sintering after 5 hours again, maintenances nitrogen flow is 170ml/rmin, rise to 400 ℃ with the temperature rise rate of 600 ℃/h after, rise to 1250 ℃ with the temperature rise rate of 200 ℃/h again and be incubated 2 hours, afterwards naturally cooling.The temperature spectrum of relative permittivity, dielectric loss and the specific inductivity of material is tested and calculated to sample behind the sintering 180 ℃ of following burning infiltration silver electrodes, then after surface finish.Test result sees Table 2 and accompanying drawing 2.Table 2 provides that specific inductivity and dielectric loss are with the variation relation (under the room temperature) of metal Ni volume content under the 1KHz, and accompanying drawing 2 is the specific inductivity thermogram (30 ℃~180 ℃) of part high-k sample.From table 2, when Ni volume fraction f was between 0.18~0.23, material obtained bigger specific inductivity, and when f=0.23, specific inductivity is about 25 times with the barium titanate matrix material for preparing under the condition near 80000; When f 〉=0.24, material becomes conductor.Can find out that from accompanying drawing 2 specific inductivity of this high dielectric constant material has good temperature stability: when temperature is between 30~170 ℃, (ε 12525)/ε 25Between 10%~15%.
The dielectric properties of table 2.1250 ℃ agglomerating sample and the relation of metal Ni volume fraction
Ni volume fraction f 0 0.10 0.15 0.18 0.20 0.21 0.22 0.23 0.24 0.30 0.35
Specific inductivity 3133 1728 2616 6842 12155 37531 45412 77669 56700 3200 1700
Dielectric loss 0.034 0.047 0.034 0.037 0.026 0.028 0.032 0.38 0.13 15 27
Embodiment 3:
Barium titanate powder and metallic nickel are mixed (the Ni volumn concentration is between 1%~35%) by the different volumes percentage composition; and in mortar, ground 5 hours; under the pressure of 2MPa, be molded into diameter then and be about 10mm; thickness is about the circular green compact of 2mm, carries out sintering in box gas shield resistance furnace.Feed nitrogen in the electric furnace and carry out sintering after 7 hours again, maintenances nitrogen flow is 70ml/min, rise to 400 ℃ with the temperature rise rate of 600 ℃/h after, rise to 1300 ℃ with the temperature rise rate of 100 ℃/h again and be incubated 1 hour, afterwards naturally cooling.The temperature spectrum of relative permittivity, dielectric loss and the specific inductivity of material is tested and calculated to sample behind the sintering 230 ℃ of following burning infiltration silver electrodes, then after surface finish.Test result sees Table 3 and accompanying drawing 3.Table 3 provides that specific inductivity and dielectric loss are with the variation relation (under the room temperature) of metal Ni volume content under the 1KHz, and accompanying drawing 3 is the specific inductivity thermogram (30 ℃~180 ℃) of part high-k sample.From table 3, when Ni volume fraction f was between 0.17~0.22, material obtained bigger specific inductivity, and when f=0.22, specific inductivity is 83000, is about 18 times with the barium titanate matrix material for preparing under the condition; When f 〉=0.23, material becomes conductor.Can find out that from accompanying drawing 3 specific inductivity of this material has good temperature stability: when temperature is between 30~170 ℃, (ε 12525)/ε 25Between 15%~25%.
The dielectric properties of table 3.1300 ℃ agglomerating sample and the relation of metal Ni volume fraction
Ni volume fraction f 0 0.10 0.15 0.17 0.19 0.21 0.22 0.23 0.30 0.35
Specific inductivity 4500 3812 5421 8700 24180 58690 83000 68700 5420 1300
Dielectric loss 0.03 0.04 0.052 0.035 0.09 0.11 0.32 20 110 87

Claims (4)

1, the high Jie's matrix material of Ni-Ti acid barium of a kind of nitrogen protection preparation, the composition that it is characterized in that this material by volume percentage composition is:
Grain-size is the barium titanate 65%~99% of 100nm~400nm;
Granularity is the metal Ni 1%~35% of 40~200nm;
Represent the volumn concentration of Ni, i.e. 0.01≤f≤0.35 with f.
2, a kind of nitrogen protection prepares the preparation method of the high Jie's matrix material of Ni-Ti acid barium; the step that it is characterized in that this method is as follows: with barium titanate and metal Ni is raw material; by volume percentage composition is 65%~99% barium titanate with after 1%~35% metal Ni mixes; ground 1~5 hour; with pressure is 2~10MPa compression moulding, and in nitrogen sintering, sintering range is 1200~1300 ℃; the temperature rise rate span of control is 100~600 ℃/h, and soaking time is controlled at 1~3h.
3, a kind of nitrogen protection according to claim 2 prepares the preparation method of the high Jie's matrix material of Ni-Ti acid barium, it is characterized in that: adopt nitrogen to carry out sintering for the sintering environmental gas, environmental gas airshed scope is 70~300ml/min.
4, a kind of nitrogen protection according to claim 2 prepares the preparation method of the high Jie's matrix material of Ni-Ti acid barium, and it is characterized in that: the stupalith for preparing, its barium titanate grain-size is 100nm~1500nm.
CNB2005100614540A 2005-11-07 2005-11-07 Preparation of nickel-barium titanate high-permittivity composite material using nitrogen protection and preparing process thereof Expired - Fee Related CN1320147C (en)

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CN1401698A (en) * 2002-09-19 2003-03-12 清华大学 High dielectric constant inorganic/organic three-component composite material and mfg. method thereof

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CN1401698A (en) * 2002-09-19 2003-03-12 清华大学 High dielectric constant inorganic/organic three-component composite material and mfg. method thereof

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