CN1313374A - Grinding milk and its application - Google Patents
Grinding milk and its application Download PDFInfo
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- CN1313374A CN1313374A CN 00102820 CN00102820A CN1313374A CN 1313374 A CN1313374 A CN 1313374A CN 00102820 CN00102820 CN 00102820 CN 00102820 A CN00102820 A CN 00102820A CN 1313374 A CN1313374 A CN 1313374A
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- cerium
- salt
- aluminium
- grinding milk
- weight part
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Abstract
A grinding slurry sued for semiconductor and IC manufacture to grind the insulating dielectric layer contains cerium oxide, aluminium hydroxide, cerium salt, water and optional acidic substance for making its pH value less than 5.
Description
The present invention relates to a kind of grinding milk that is used for unicircuit (IC) or semiconductor fabrication, particular words it, grinding milk of the present invention can be effectively applied to shallow trench isolation (shallow trench isolation, the dielectric layer flatening effect in method STI) of IC or semiconductor fabrication.
Cerium oxide in tradition is used, is used for the grinding of glass because silicon-dioxide is had very high material removal rate.Yet, in the grinding of the silicon dioxide dielectric layers of IC manufacturing processed, carry out the grinding of insulation dielectric layer to forge system silica (fumed silica) or the obtained lapping liquid of colloided silica (colloidal silica) traditionally, all need add potassium hydroxide in these lapping liquids to improve its grinding rate.Can produce the problem of alkalimetal ion diffusion owing to add potassium hydroxide, and the worn selection rate that can accept silicon dioxide/silicon nitride can't be provided, the lapping liquid that this kind used traditionally, and be not suitable for the grinding of shallow trench isolation layer in the IC manufacturing processed.Therefore, desire to seek a kind of can effectively being applied in IC and the semiconductor fabrication in this area, and the abrasive composition of the worn selection rate of higher silica/silicon nitride can be provided.
United States Patent (USP) 5,264,010 discloses a kind of grinding milk that is used for the grinding semiconductor surface, and it comprises cerium oxide, forges the system silica, precipitated silica (precipitated silica), and water.This patent has also been instructed in its grinding milk and has been added tensio-active agent, with in grinding milk as suspension agent.
United States Patent (USP) 5,759,917 disclose a kind of semi-conductor and IC manufacturing processed abrasive silica (SiO of being used for
2) and silicon nitride (Si
3N
4) and can obtain higher SiO
2/ Si
3N
4Grind the Chemicomechanically grinding composition of selection rate, said composition comprises a kind of salt, solubility cerium compound and a kind of carboxylic acid, and the pH value of said composition is between 3-11.
United States Patent (USP) 5,891,205 relate to a kind of use chemical machinery polishing slurries with the method with the oxide skin polishing of semiconducter device (semiconductor device), the alkaline aqueous dispersion liquid of its employed polishing slurry package oxidation-containing cerium and silicon-dioxide mixing abrasive particle.
United States Patent (USP) 5,766,279 to have disclosed a kind of be the polishing slurries of matrix with cerium oxide fine granular and silicon oxide, wherein be with cerium oxide fine granular and silica sol (silica so1) through mix, dry, and thermal treatment after, mixes these polishing slurries of formation with liquid medium.
United States Patent (USP) 5,938,505 have disclosed a kind of STI grinding milk that handle, that be used to improve the worn selection rate of silicon oxide/silicon nitride that is used for semiconductor fabrication, it comprises salt, alkali and the hydrogen peroxide of tetramethyl-ammonium, wherein, the salt of this tetramethyl-ammonium is preferably fluoridizes tetramethyl-ammonium, and grinding milk preferably has 11 to 13 pH value.
The Taiwan patent announcement has disclosed a kind of abrasive composition No. 301024, and it comprises the aluminum oxide or the silicon oxide of 100 weight parts, and the cerium oxide of 5-25 weight part.
Day disclosure special permission communique spy opens the chemical machinery polishing slurries that flat 10-233378 discloses a kind of STI of being used for flattening method, it has pH value, 8-16% highly filled of 11-13 and comprises fluorochemical, and these slurries can provide the selectivity of the oxide/nitride up to 10: 1.
During as the abrasive material of grinding milk, therefore cerium oxide itself is very easy to precipitate in slurries owing to have higher density in being applied to the STI flattening method.Yet teaching or mention any effective ways of promoting cerium oxide suspension character not fully in the prior art.Though prior art teaching uses tensio-active agent to increase the suspension of grinding milk, yet in storage process, abrasive grains produces sedimentation because of being subjected to influence of gravity, cause particle to be reset owing to particle has splendid flowability this moment, and form irreversible fine and close cake (cake).Therefore, the present invention's purpose promptly is to provide a kind of grinding milk that overcomes the cerium oxide sedimentation problem and have the worn selection rate of favourable silicon oxide/silicon nitride.
The invention provides a kind of grinding milk that is used for semi-conductor and IC manufacturing processed, it comprises salt, and the water of oxyhydroxide, the cerium of cerium oxide, aluminium, grinding milk of the present invention optionally can further comprise acidic substance, so that slurries of the present invention have the pH-value less than 5.During the STI that grinding milk of the present invention is specially adapted to semi-conductor or IC manufacturing processed handles as the abrasive of insulation dielectric layer.
Below the present invention will be described in detail.
The invention provides a kind of grinding milk that is used for semi-conductor or IC manufacturing processed, it comprises salt, and the water of oxyhydroxide, the cerium of cerium oxide, aluminium, grinding milk of the present invention optionally can further comprise acidic substance, so that slurries of the present invention have the pH-value less than 5.During the STI that grinding milk of the present invention is specially adapted to semi-conductor and IC manufacturing processed handles as the abrasive of insulation dielectric layer.
The present inventor finds, the oxyhydroxide of the aluminium that is comprised in the grinding milk of the present invention, can under acidic conditions, promote the suspension of cerium oxide, its major cause is, the oxyhydroxide of aluminium can form a coating layer in the cerium oxide surface under acidic conditions, and cerium oxide can be suspended in the aqueous medium equably.The cerium oxide particle that has the oxyhydroxide coating layer of aluminium on the surface, owing to have short change behavior, because of the existence of reactive force each other, pin down each other between particle between the particle, thereby unlikely generation precipitates the aggegation (reversible flocculation) that maybe can produce reversible and make.This case contriver finds, when the oxyhydroxide of cerium oxide surface metallized aluminum, can reduce the activity of cerium oxide to silicon-dioxide, and cause the grinding rate of gained slurries to descend, therefore the present composition comprises the salt of cerium in addition, overcoming the passivation on cerium oxide surface, and improve the worn selection rate of silicon dioxide/silicon nitride simultaneously.According to example hereinafter described as can be known, grinding milk of the present invention can provide and be higher than 5, preferably is higher than 7, more preferably up to the worn selection rate of the silicon dioxide/silicon nitride more than 10.
Therefore, the oxyhydroxide of the aluminium that is comprised in the grinding milk of the present invention, can be any cerium oxide suspension person that promotes, for example boehmite (boehmite), class boehmite (pseudo boehmite), aluminium colloidal sol (aluminum sol) or aluminium hydroxide or two or the mixture of multiple these materials.According to the preferred embodiments of the invention, when grinding milk of the present invention comprised 100 weight parts waters, the amount ranges of the oxyhydroxide of aluminium was 0.1 to 5 weight part.
The salt of the cerium that grinding milk of the present invention comprised can be any person known in the art, and water miscible comparatively preferred.The example of the salt of this cerium for example can be the salt of cerous nitrate, for example ceric ammonium nitrate, cerous sulfate, Cerium II Chloride, cerous carbonate or two or the mixture of multiple these compounds.Slurries of the present invention are benchmark with 100 weight parts waters, can comprise the salt of 0.01 to 2 this cerium of weight part.
Grinding milk of the present invention optionally can comprise acidic substance, so that slurries of the present invention have the pH value less than 5.These acidic substance can be and are used for regulator solution acid-basicity person in any prior art, for example nitric acid, hydrochloric acid, acetic acid, phosphoric acid, sulfuric acid or two or the mixture of multiple these acid.
Following example will the invention will be further described, and only it is non-in order to limit scope of the present invention, and modification and change that any those skilled in the art can reach easily all are covered by in the present invention's the scope.
Grind test
A. instrument: IPEC/Westech472
B. condition: pressure: 3psi
Back pressure: 0psi
Temperature: 25 ℃
The speed of mainshaft: 50rpm
Platen rotating speed: 60rpm
Base pattern: IC1400
Slurry flow rate: 200 ml/min
C. wafer: silicon oxide film and silicon nitride film, available from Silicon Valley
Microelectonics, Inc. is in 6 inches silicon with the LPCVD technology
The silicon oxide film of deposit 0.85 micron ± 5% and silicon nitride are thin on the wafer
Film.
Grind testing process:
Before and after grinding, must measure the thickness of film with elcometer.The present invention adopts the SM300 type machine of KLA-Tencor company to measure the thickness of dielectric layer.The measuring method system of polishing speed records dielectric layer thickness T with above-mentioned RS300 type machine earlier
1, grind 1 minute with the slurries in the example respectively after, the Evergreen Model 10X type machine cleaning wafer with solid-state instrument company (Solid State Equipment Corporation) afterwards, dries up wafer.Measure the thickness T of dielectric layer again with SM300 type machine
2With T
1-T
2Be the polishing speed of dielectric layer.Example 1
With 1 weight part CeO
2Add in the 100 weight part deionizations with the preparation grinding milk.The grinding test result of the grinding of gained slurries, as shown in table 1.Table 1
Example 2-7
| ?CeO 2(weight part) | Boehmite (weight part) | Ceric ammonium nitrate (weight part) | ?SiO 2(/min) | ?Si 3N 4(/min) | Selection rate | |
| 1 | ?1 | ????- | ???- | ?4895.3 | ?1043.5 | ?4.69 |
CeO with Different Weight part
2Add in the deionized water of 100 weight parts with the nitric acid of 0.1 weight part, and add the boehmite of Different Weight part, with the grinding milk of preparation example 2-7.The grinding test result of gained grinding milk, as shown in table 2.Table 2
Example 8-14
| ?CeO 2(weight part) | Boehmite (weight part) | Ceric ammonium nitrate (weight part) | ?SiO 2(/min) | Si 3N 4(/min) | Selection rate | |
| ?2 | ?1 | ?0.16 | ?- | ?3269.3 | ?888.3 | ?3.68 |
| ?3 | ?0.5 | ?0.16 | ?- | ?2130 | ?840.98 | ?2.53 |
| ?4 | ?5 | ?0.16 | ?- | ?5489 | ?731.77 | ?7.50 |
| ?5 | ?1 | ?0.32 | ?- | ?2563.3 | ?760.85 | ?3.36 |
| ?6 | ?1 | ?0.5 | ?- | ?677.99 | ?334.21 | ?2.02 |
| ?7 | ?1 | ?1.6 | ?- | ?54.9 | ?75.64 | ?0.71 |
CeO with 1 weight part
2Add in the deionized water of 100 weight parts with the nitric acid of 0.1 weight part, and add boehmite of Different Weight part and an amount of ceric ammonium nitrate ((NH
4)
2Ce (NO
3)
6), with the grinding milk of preparation example 8-14.The grinding test result of gained grinding milk, as shown in table 3.Table 3
Example 15
| ?CeO 2(weight part) | Boehmite (weight part) | Ceric ammonium nitrate (weight part) | ?SiO 2(/min) | ?Si 3N 4(/min) | Selection rate | |
| ?8 | ?1 | ?0.16 | ?0.1 | ?2082.1 | ?194.12 | ?10.73 |
| ?9 | ?1 | ?1 | ?0.05 | ?464 | ?47 | ?9.87 |
| ?10 | ?1 | ?1 | ?0.1 | ?785 | ?78 | ?10.06 |
| ?11 | ?1 | ?1 | ?0.2 | ?1720 | ?234 | ?7.32 |
| ?12 | ?1 | ?1.3 | ?0.15 | ?450 | ?61 | ?7.37 |
| ?13 | ?1 | ?1.6 | ?0.15 | ?1115 | ?107 | ?10.72 |
| ?14 | ?1 | ?1 | ?1 | ?3317.3 | ?976.6 | ?3.40 |
CeO with 1 weight part
2Add in the deionized water of 100 weight parts, and add the boehmite of 0.5 weight part and the ceric ammonium nitrate of 0.1 weight part, with the grinding milk of preparation embodiment 15.The grinding test result of gained grinding milk, as shown in table 4.Table 4
| ?CeO 2(weight part) | Boehmite (weight part) | Ceric ammonium nitrate (weight part) | ?SiO 2(/min) | ?Si 3N 4(/min) | Selection rate | |
| ?15 | ?1 | ?0.5 | ?0.1 | ?2282.8 | ?49.78 | ?45.86 |
Claims (16)
1, a kind of grinding milk, it comprises CeO
2, the oxyhydroxide of aluminium, the salt and the water of cerium, and optionally comprise acidic substance so that grinding milk has the pH value less than 5.
2, slurries according to claim 1, wherein in 100 weight parts waters, this CeO
2Amount ranges be 0.5 to 10 weight part.
3, slurries according to claim 1, wherein the oxyhydroxide of this aluminium is selected from boehmite, class boehmite, aluminium colloidal sol, aluminium hydroxide or two or the mixture of multiple these materials.
4, slurries according to claim 1, wherein in 100 weight parts waters, the amount ranges of the oxyhydroxide of this aluminium is 0.1 to 5 weight part.
5, slurries according to claim 1, wherein the salt of this cerium is a water soluble salt.
6, slurries according to claim 5, wherein the salt of this cerium is selected from ceric ammonium nitrate, cerous sulfate, Cerium II Chloride, cerous carbonate or its mixture.
7, slurries according to claim 1, wherein in 100 weight parts waters, the amount ranges of the salt of this cerium is 0.01 to 2 weight part.
8, slurries according to claim 1, wherein these acidic substance are selected from nitric acid, hydrochloric acid, acetic acid, phosphoric acid, sulfuric acid or its mixture.
9, a kind ofly be used for the method that semi-conductor or ic manufacturing process grind shallow trench insulation, it comprises with a grinding milk and grinds this shallow trench insulation, and this grinding milk comprises CeO
2, aluminium salt, and the water of oxyhydroxide, cerium, and optionally comprise acidic substance so that grinding milk has the pH value less than 5.
10, method according to claim 9, wherein in 100 weight parts waters, this grinding milk comprises the CeO of 0.5 to 10 weight part
2
11, method according to claim 9, wherein the oxyhydroxide of this aluminium is to be selected from boehmite, class boehmite, aluminium colloidal sol, aluminium hydroxide or two or the mixture of multiple these materials.
12, method according to claim 9, wherein this grinding milk comprises the oxyhydroxide of this aluminium of 0.1 to 5 weight part in 100 weight parts waters.
13, method according to claim 9, wherein the salt of this cerium is a water soluble salt.
14, slurries according to claim 13, wherein the salt of this cerium is selected from ceric ammonium nitrate, cerous sulfate, Cerium II Chloride, cerous carbonate or its mixture.
15, method according to claim 9, wherein this grinding milk comprises the salt of 0.01 to 2 this cerium of weight part in 100 weight parts waters.
16, method according to claim 9, wherein these acidic substance are selected from nitric acid, hydrochloric acid, acetic acid, phosphoric acid, sulfuric acid or its mixture.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00102820 CN1237141C (en) | 2000-03-10 | 2000-03-10 | Grinding milk and its application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00102820 CN1237141C (en) | 2000-03-10 | 2000-03-10 | Grinding milk and its application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1313374A true CN1313374A (en) | 2001-09-19 |
| CN1237141C CN1237141C (en) | 2006-01-18 |
Family
ID=4576576
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 00102820 Expired - Fee Related CN1237141C (en) | 2000-03-10 | 2000-03-10 | Grinding milk and its application |
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| Country | Link |
|---|---|
| CN (1) | CN1237141C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113122139A (en) * | 2019-12-30 | 2021-07-16 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution and use method thereof |
-
2000
- 2000-03-10 CN CN 00102820 patent/CN1237141C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113122139A (en) * | 2019-12-30 | 2021-07-16 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution and use method thereof |
| CN113122139B (en) * | 2019-12-30 | 2024-04-05 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution and application method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1237141C (en) | 2006-01-18 |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: CHANGXING DEVELOPMENT TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: CHANGXING CHEMICAL INDUSTRY CO LTD Effective date: 20060707 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20060707 Address after: Taiwan, China Patentee after: Changxing Development Technology Co., Ltd. Address before: Taiwan, China Patentee before: Changxing Chemical Industrial Co., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20060118 Termination date: 20190310 |