CN1313368C - Production equipment and method of silicon used for solar battery - Google Patents
Production equipment and method of silicon used for solar battery Download PDFInfo
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- CN1313368C CN1313368C CNB200310105314XA CN200310105314A CN1313368C CN 1313368 C CN1313368 C CN 1313368C CN B200310105314X A CNB200310105314X A CN B200310105314XA CN 200310105314 A CN200310105314 A CN 200310105314A CN 1313368 C CN1313368 C CN 1313368C
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 88
- 239000010703 silicon Substances 0.000 title claims abstract description 88
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 89
- 238000007670 refining Methods 0.000 claims abstract description 36
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000002893 slag Substances 0.000 claims abstract description 20
- 239000007789 gas Substances 0.000 claims abstract description 15
- 238000003723 Smelting Methods 0.000 claims abstract description 14
- 229910052786 argon Inorganic materials 0.000 claims abstract description 14
- 239000010439 graphite Substances 0.000 claims description 86
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 83
- 229910002804 graphite Inorganic materials 0.000 claims description 47
- 241000209456 Plumbago Species 0.000 claims description 38
- 238000009413 insulation Methods 0.000 claims description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 230000000630 rising effect Effects 0.000 claims description 14
- 238000007789 sealing Methods 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 7
- 238000000746 purification Methods 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
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- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
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Abstract
The present invention relates to equipment and technology for preparing solar energy photovoltaic material, particularly to equipment and technology for preparing silicon used for solar batteries, which belongs to the field of smelting technique. The equipment and technology are characterized in that the advantages of a plasma furnace and a medium frequency induction furnace are fully utilized. An induction coil connected with medium frequency power supply is arranged between the inner wall of the furnace casing of the plasma furnace and the outer wall of a crucible. A plasma torch is used for replenishing energy for the induction coil, argon is used as the working gas of a plasma body, and the partial pressure of O2 and Co in the atmosphere is extremely low so as to achieve the vacuum smelting purpose. Because the plasma body is a heat source with high energy density, the temperature of a high-temperature region can reach a plurality of thousand degrees, and the atmosphere is controllable, a melted silicon fused mass is sufficiently melted with refining slag under the action of the high temperature and the medium frequency induction coil so as to transfer impurities to the melted slag. Accordingly, the reaction speed is accelerated, and the technological processes are simplified. The equipment and technology have the characteristics of simple structure and process, easy processing and operation, large-scale equipment, large-scale industrial production, high product quality, little investment, low production cost, etc.
Description
Technical field: the invention belongs to technical field of smelting, especially relate to equipment and technology that a kind of solar energy photovoltaic material is produced---promptly produce the equipment and the technology of silicon for solar cell.
Background technology: also increasing to the demand of the energy along with the high speed development of world economy, the use of a large amount of coals, gas, oil has caused serious pressure to ecotope.Therefore to the emphasis that utilizes, the renewable solar energy resource of exploitation has been the countries in the world energy strategy.Utilize the photovoltaic effect of silicon, directly solar radiation can be transformed into electric energy, this technology is applied to many fields by various countries.But,, solar cell can't be widely used in large-scale economic construction, social development and the people's the daily life go owing to reasons such as the production technology difficulty of existing silicon for solar cell is big, complex process, qualification rate are low, production cost height.In manufacture of solar cells, silicon materials account for more than 50% of solar cell cost, and reducing the silicon materials cost is that can solar cell industry fast-developing key.So explore the production unit and the method for the special-purpose silicon of cheap solar cell, make it to guarantee to reach the specification of quality of silicon for solar cell, again can large-scale industrialized production, and realize lowering product cost significantly, become countries in the world this technical field professional and technical personnel's the task of top priority.
The production method of current domestic and international silicon for solar cell mainly is to take SiHCl
3Hydrogen reduction method and silane pyrolysis method.The traditional technology route:
Metal Si → gasification → rectifying → Si separates out → and that high purity Si → Si fuses → solidify refining is refining → and cut off and clean
↑ ↑
HCl H
2
From above operational path big, the complex process of this as can be seen Technology difficulty, initial cost is big, production cost is high.The polysilicon that this explained hereafter goes out yields poorly, and the purity height is applicable to semi-conductor industry, must modifier treatment if be used for solar cell.For large-scale developing and utilizing solar energy resources, people can reduce product cost significantly in exploration can do a large amount of work aspect the production method of scale operation silicon for solar cell again.The domestic appearance with ultra-pure quartz material (or quartz ware waste material) technology that to be raw material produce polysilicon with electric arc furnace smelting.But produce polysilicon with electric arc furnace, be restricted in the problem because of the Technology aspect aspect refining refining effect, quality product, the production cost.
Summary of the invention: purpose of the present invention just provides the production unit and the method for the silicon for solar cell that a kind of technology is simple, product percent of pass is high.
A kind of production unit of silicon for solar cell by furnace shell 1, plumbago crucible 2, the hollow bell 7, the vision slit 9 that are communicated with water inlet pipe 8 and rising pipe 12, graphite hollow cathode 10, charge cavity 11, molten silicon that argon gas is passed through in the middle of it portal 13, thermal insulation layer 15 and graphite anode 16 form, furnace shell 1 is the cylinder body shape, the opening of the plumbago crucible 2 of awl staving shape upwards places the inside of furnace shell 1 and the bottom of its close furnace shell 1 in bottom, and the space between plumbago crucible 2 and the furnace shell 1 is a thermal insulation layer 15; Hollow bell 7 is sealed on the top of furnace shell 1, is communicated with in the cavity of the end sealing insertion hollow bell 7 of water inlet pipe 8 and rising pipe 12 and with this cavity; The middle part that one end of graphite hollow cathode 10 passes hollow bell 7 extend in the furnace shell 1; One end of vision slit 9 and charge cavity 11 hermetically passing hollow bell 7 respectively communicates with top in the furnace shell 1; The molten silicon of piped portals 13 oblique cutting sealing and fixing in the opening on furnace shell 1 top, the molten silicon of piped portals, and to melt the effusive circular hole of silicon body be same axle center for making of being provided with on the thermal insulation layer 15 in 13 axle center and the furnace shell 1, the even cementation glass sand of inside pipe wall thermal insulation layer, the lower port that makes the molten effusive circular hole of silicon body that is provided with on the thermal insulation layer 15 in the above-mentioned furnace shell 1 is in plumbago crucible 2 edge suitable for reading, portal 13 upper port of molten silicon is higher than its lower port, and upper port seals with flanged plate; One end of graphite anode 16 passes centre and the intermediary thermal insulation layer 15 of furnace shell and plumbago crucible 2 bottoms at 1 end and the bottom connection of plumbago crucible 2 of furnace shell 1 bottom; Raw silicon 14 is in the inside of plumbago crucible 2 in the production process, and the molten bath forms back (raw silicon 14 surface meltings) and adds by CaO and SiO from charge cavity 1
2The refining slag 5 of preparation, argon gas is opened power supply after graphite hollow cathode 10 enters in the stove, and the plasma arc 6 of forming for graphite hollow cathode 10 and graphite anode 16 power supply backs is in the bottom that graphite hollow cathode 10 stretches to furnace shell 1 an inner end.It is characterized in that: between the inwall of furnace shell 1 and plumbago crucible 2 outer walls ruhmkorff coil 3 that is connected with intermediate frequency power supply 4 is housed.
A kind of production method of silicon for solar cell, raw silicon 14 is joined by furnace shell 1 by charge cavity 11, plumbago crucible 2, the hollow bell 7 that fixedly is communicated with water inlet pipe 8 and rising pipe 12, vision slit 9, the graphite hollow cathode 10 that argon gas is therefrom passed through, molten silicon portals 13, in the plumbago crucible 2 in the furnace shell 1 of the production unit that thermal insulation layer 15 and graphite anode 16 are formed, open water inlet pipe 8 and rising pipe 12, argon gas is transferred to operating pressure to be sent in furnace shell 1 volume inside by graphite hollow cathode 10 under an atmospheric pressure state, opening power supply gives for graphite hollow cathode 10 and graphite anode 16, the height of adjusting graphite hollow cathode 10 makes plasma arc 6 be in normal operating conditions, reach and set smelting temperature more than 1600 ℃, after 30 minutes, when the top fusing of the raw silicon 14 in the plumbago crucible 2 forms the molten bath, will be by CaO and SiO
2The refining slag 5 that is mixed with joins the top of plumbago crucible 2, wherein CaO and SiO from charge cavity 11
2In a kind of content be 40%-60%, the add-on of refining slag 5 is the 10%-15% of raw silicon add-on, after 2 hours refinings purification, opening portal 13 flange of molten silicon seals, the inclination smelting furnace, silicon melt portalled from molten silicon 13 be injected into insulation behind 1410 ℃-1544 ℃ mold, white residue separates in refrigerative process gradually, polycrystal silicon ingot generates, promptly get the silicon for solar cell ingot bar by the cutting cleaning, it is characterized in that: after joining raw silicon 14 in the graphite pincers pot 2, when opening water inlet pipe 8 and rising pipe 12, open and advancing that ruhmkorff coil 3 is communicated with, effluent control device, and open the intermediate frequency power supply 4 that is connected with ruhmkorff coil 3.
Description of drawings: accompanying drawing is the production unit of a kind of silicon for solar cell of the present invention and the production unit structural representation in the method, wherein:
1---furnace shell 2---plumbago crucible
3---ruhmkorff coil 4---intermediate frequency power supply
5---refining slag 6---plasma heating furnace
7---hollow bell 8---water inlet pipe
9---vision slit 10---graphite hollow cathode
11---charge cavity 12---rising pipe
13---molten silicon portals 14---raw silicon
15---thermal insulation layer 16---graphite anode
Embodiment: in conjunction with the accompanying drawings, the production unit of a kind of silicon for solar cell of narration the present invention and the implementation procedure of method.The present invention is made of equipment and production technique two portions, first narration production unit: the main body of production unit is a kind of plasma medium-frequency induction furnace, by furnace shell 1, plumbago crucible 2, the hollow bell 7, the vision slit 9 that are communicated with water inlet pipe 8 and rising pipe 12, graphite hollow cathode 10, charge cavity 11, molten silicon that argon gas is passed through in the middle of it portal 13, thermal insulation layer 15 and graphite anode 16 form; Furnace shell 1 is by steel plate processing, and tubbiness, bottom centre position have an open-work that graphite anode 16 is passed, and plumbago crucible 2 openings of awl tubbiness upwards place the inside of furnace shell 1 and the bottom of its close furnace shell 1 in bottom, and crucible is to process with high purity graphite; Space between plumbago crucible 2 and the furnace shell 1 is a thermal insulation layer 15, and thermal insulation layer 15 is a glass sand, fixes with high-strength adhesive; Hollow bell 7 is sealed on the top of furnace shell 1, and the end sealing of water inlet pipe 8 and rising pipe 12 is inserted in the cavity of hollow bell 7, and the bottom of hollow bell 7 (one side towards furnace shell 1 inside) is high temperature resistant, the anti-thermal insulation layer that washes away; The middle part that one end of graphite hollow cathode 10 passes hollow bell 7 extend in the furnace shell 1, and an end of vision slit 9 and charge cavity 11 top in hermetically passing hollow bell 7 and the furnace shell 1 respectively communicates; It 13 is a short tube that molten silicon portals, one end oblique cutting sealing and fixing is in the opening on furnace shell 1 housing top, the molten silicon of piped portals, and to melt the effusive circular hole of silicon body be same axle center for making of being provided with on the thermal insulation layer 15 in 13 axle center and the furnace shell 1, the inside pipe wall cementation has thickness homogeneous high purity degree quartz sand thermal insulation layer, the lower port that makes the molten effusive circular hole of silicon body that is provided with on the thermal insulation layer 15 in the above-mentioned furnace shell 1 is in plumbago crucible 2 edge suitable for reading, the upper port of molten silicon outlet 13 is higher than its lower port, upper port flange sealing; One end of graphite anode 16 passes centre and the thermal insulation layer 15 of furnace shell and between plumbago crucible 2 bottoms and the bottom connection of plumbago crucible 2 of furnace shell 1 bottom at 1 the end; This production unit is with the difference of general plasma heating furnace: between the outer wall of the inside of furnace shell 1 and plumbago crucible 2 ruhmkorff coil 3 that is connected with intermediate frequency power supply 4 is housed; Ruhmkorff coil 3 shape in the shape of a spiral is enclosed within the outside of plumbago crucible 2, is processed by copper pipe, fixedlys connected with the two ends outer wall of spirrillum copper pipe respectively in the two poles of the earth of intermediate frequency power supply 4, in the actual production process, and water flowing cooling in the copper pipe.
The power supply of ruhmkorff coil 3 required 100Hz, 100KW is supplied with by thyristor intermediate frequency electric source; Plumbago crucible 2 usefulness high purity graphites process, and hollow bell 7 inside are high temperature resistant, the anti-lagging material that washes away, and bell is a hollow, is cooled with circulating water; Vision slit 9 and charge cavity 11 are housed above the hollow bell 7, and vision slit 9 mainly is the situation in the stove of observing in operational process, and the refining slag 5 of raw silicon 14 and preparation in advance adds from charge cavity 11; Graphite hollow cathode 10 and graphite anode 16 all are to make with high purity graphite, and 80-100V, 400-500A power supply are powered by the plasma arc power supply; Graphite hollow cathode 10 is a hollow, produces and feeds argon gas at the very start, and operating pressure is a normal atmosphere, protects bath surface with argon atmospher; Produce the energy supplement of plasma arc 6 when graphite hollow cathode 10 and graphite anode 16 work as ruhmkorff coil 3; At high temperature, wherein impurity shifts in refining slag 5 after raw silicon 14 fusing; Through 2 hours refining purification rear-inclined body of heater, the polysilicon liquation portalled from molten silicon and 13 waters the mold polysilicon in the molten bath; Mold temperature is set in 1410 ℃-1544 ℃, and refining slag 5 precipitations are solidified under this temperature, reach white residue and separate, and after the heat exchange cooling, polycrystal silicon ingot generates; Silicon ingot takes out after the finishing section and is used to produce solar cell; Molten silicon portals and 13 uses the flange sealing in smelting process.
Production method: the raw silicon 14 that granularity, silicon content is suitable joins in the plumbago crucible 2 in the furnace shell 1, till filling it up with by charge cavity 11.Open water inlet pipe 8 and rising pipe 12, open the water-in and water-out control device that is communicated with ruhmkorff coil 3; Argon gas is sent to the inside of furnace shell 1 by graphite hollow cathode 10; Open intermediate frequency power supply 4 respectively and give graphite anode 16 and the power supply of graphite hollow cathode 10 power supplies, the height of adjusting graphite hollow cathode 10 makes plasma arc be in normal operating conditions; When seeing that from vision slit 9 raw silicon 14 in the plumbago crucible 2 begins to melt (forming the molten bath), the refining slag 5 of a certain amount of preparation is in proportion joined the top of the plumbago crucible 2 in the furnace shell 1 from charge cavity 11; After 2 hours refinings purification, opening portal 13 flange of molten silicon seals, the inclination smelting furnace, silicon melt portalled from molten silicon 13 be injected into insulation 1410 ℃-1544 ℃ mold, white residue separates in process of cooling gradually, polycrystal silicon ingot generates, and cleans by cutting and promptly gets the silicon for solar cell ingot bar.
Refining slag 5 plays a part absorption impurity in smelting process, refining is purified.Refining slag 5 has multiple choices, and refining slag 5 is CaO and SiO among the present invention
2Mixture, its add-on is the 10%-15% of raw silicon 14 add-ons, and wherein a kind of content is between 40%-60%.Two places cooling inflow temperature is not more than 25 ℃ during the whole smelting, and leaving water temperature(LWT) is not more than 50 ℃.
Production method embodiment: with 0.5 ton of plasma medium-frequency induction furnace is example, take by weighing the 160kg granularity between 10-25mm, Si content is not less than 99.0%, to be not more than 1.0% (wherein Fe≤0.6%, Al≤0.4, Ca≤0.4) industrial silicon be raw silicon 14 to the impurity summation, join in the plumbago crucible 2 in the furnace shell 1 by charge cavity 11; Open the valve of water inlet pipe 8 and rising pipe 12, open water-in and water-out control valve with ruhmkorff coil 3 copper pipe internal communication; Argon gas is sent into the inside of furnace shell 1 by graphite hollow cathode 10: open intermediate frequency power supply and give ruhmkorff coil 3 power supplies, open power supply to the power supply of graphite anode 16 and graphite hollow cathode 10, adjust the height of graphite hollow cathode 10, make its plasma arc 6 that is in the lower port in the furnace shell 1 be in normal operating conditions.After 45 minutes, when the raw silicon 14 of seeing plumbago crucible 2 middle and upper parts from vision slit 9 begins to melt, add 20kg granularity≤5mm again 2 from charge cavity 11 toward plumbago crucible, by CaO and SiO
2The refining slag 5 that mixes, wherein CaO accounts for 45%: temperature is after purifying through 2 hours refining more than 1600 ℃, opening portal 13 flange of molten silicon seals, the inclination body of heater, silicon melt portalled from molten silicon 13 is injected into insulation 1410 ℃-1544 ℃ mold, and the contamination precipitation in this moment silicon melt solidifies, white residue separates, polycrystal silicon ingot generates in the heat exchange process of cooling, and silicon ingot takes out through cutting and is weighed as 140kg after peace and quiet, and its product major ingredient is as follows:
After the finishing section, promptly can be used for solar cell again.
Effect and advantage: the production unit of a kind of silicon for solar cell of the present invention---plasma intermediate frequency
| Composition | Si | Al | Ca | Ti | C | Fe | Mn | P | B |
| Content % | ≥99.999 | 0.0002 | 0.00005 | 0.00005 | 0.0001 | 0.0002 | 0.0002 | 0.0001 | 0.0001 |
Induction furnace is the advantage of collection plasma heating furnace and medium-frequency induction furnace, is ruhmkorff coil 3 supplementing energy with plasma arc, with the working gas of argon gas as plasma body, the O in the atmosphere
2Extremely low with the dividing potential drop of CO, reach the vacuum metling level.
Plasma body is the very high thermal source of a kind of energy density, and the high-temperature zone temperature generally can reach several thousand degree and even degree up to ten thousand, and atmosphere is controlled.Itself is in ionized state plasma body, and reactant is on every side had very strong activation capability.Therefore it is not only a kind of cleaning, ideal high temperature heat source, and is again the person of participating in directly or the preserver of multiple physical-chemical reaction process.These characteristics of high-temperature plasma are significant to polysilicon smelting and refining purification process, and it can accelerated reaction speed, simplification or shortening Production Flow Chart.
Produce the silicon for solar cell refining, purify and in stove, once finish, with the plasma medium-frequency induction furnace so technology is simple.Technology of the present invention is:
Refining slag
↓ Pure Silicon Metal → plasma medium-frequency induction furnace → directional freeze ingot casting → cut-out is peace and quiet → the silicon for solar cell ingot bar
This as can be seen Technology advantage from artwork: technology is simple, easily grasp operation, thus produce equipment can maximize, can large-scale industrialized production, the quality product height, initial cost is few, production cost is low etc.
On Technology, take the plasma medium-frequency induction furnace as refining unit, be to give full play to the effect of plasma technology in refining, purification field.Advantages such as the temperature height, heat flow density that the plasma medium-frequency induction furnace has promptly been brought into play plasma arc is big, concentration of energy, atmosphere are controlled have been brought into play temperature raising, the high insulating effect of medium-frequency induction furnace again, and the characteristics that the molten bath stirs are significantly improved refining effect.
Under the high temperature and inert atmosphere of plasma arc, some low melting point impurity can volatilize rapidly, thereby improve the refining refining effect.Compare with the vacuum consumable remelting furnace with ordinary arc furnace, adopt the content of harmful residual element Pb, Ca, Zn etc. of plasma smelting few.The plasma medium-frequency induction furnace is purified with the refining slag refining, and it is remarkable that it takes off the O effect, and can take off S simultaneously, takes off P.Refining slag can make B, Fe in the silicon, Al etc. shift in slag in smelting process, has save vacuum and has taken off P, takes off B technology.
Claims (2)
1, a kind of production unit of silicon for solar cell, by furnace shell [1], plumbago crucible [2], be communicated with water inlet pipe [8] and rising pipe [12] hollow bell [7], vision slit [9], can make graphite hollow cathode [10], charge cavity [11] that argon gas passes through in the middle of it, melt that silicon portals [13], thermal insulation layer [15] and graphite anode [16] form, furnace shell [1] is a round barrel shape, plumbago crucible [2] opening of awl staving shape upwards places the inside of furnace shell [1] and the bottom of its close furnace shell [1] in bottom, and the space between plumbago crucible [2] and the furnace shell [1] is thermal insulation layer [15]; Hollow bell [7] is sealed on the top of furnace shell [1], the sealing of one end of water inlet pipe [8] and rising pipe [12] insert in the cavity of hollow bell [7] and with this cavity UNICOM, the middle part that one end of graphite hollow cathode [10] passes hollow bell [7] extend in the furnace shell [1], and an end of vision slit [9] and charge cavity [11] communicates on the interior top of hermetically passing hollow bell [7] and furnace shell [1] respectively; The molten silicon of piped portals [13] oblique cutting sealing and fixing in the opening on furnace shell [1] top, portal [13] axle center and the thermal insulation layer [15] in the furnace shell [1] of the molten silicon of piped gone up making of being provided with to melt the effusive circular hole of silicon body is same axle center, the even cementation glass sand of inside pipe wall thermal insulation layer, thermal insulation layer [15] in the above-mentioned furnace shell [1] is gone up the lower port that makes the molten effusive circular hole of silicon body that is provided with and is in plumbago crucible [2] edge suitable for reading, the portal upper port of [13] of molten silicon is higher than its lower port, and upper port seals with flanged plate; One end of graphite anode [16] pass the centre of furnace shell [1] bottom and the thermal insulation layer [15] between furnace shell [1] bottom and with the bottom connection of plumbago crucible [2]; It is characterized in that: be provided with the ruhmkorff coil [3] that is connected with intermediate frequency power supply [4] between the inwall of furnace shell [1] and plumbago crucible [2] outer wall.
2, a kind of production method of silicon for solar cell, raw silicon [14] is joined by furnace shell [1] by charge cavity [11], plumbago crucible [2], the hollow bell [7] that fixedly is communicated with water inlet pipe [8] and rising pipe [12], vision slit [9], the graphite hollow cathode [10] that argon gas is therefrom passed through, molten silicon portal [13], in the plumbago crucible [2] in the furnace shell [1] of the production unit that thermal insulation layer [15] and graphite anode [16] are formed, open water inlet pipe [8] and rising pipe [12], argon gas is transferred to operating pressure to be sent in furnace shell [1] volume inside by graphite hollow cathode [10] under an atmospheric pressure state, opening power supply gives for graphite hollow cathode [10] and graphite anode [16], the height of adjusting graphite hollow cathode [10] makes plasma arc [6] be in normal operating conditions, reach design temperature more than 1600 ℃, after 30 minutes, when the raw silicon [14] in the plumbago crucible [2] begins fusing and forms the molten bath from top, with a certain amount of by CaO and SiO
2The refining slag that is mixed with [5] joins the top of plumbago crucible [2], wherein CaO and SiO from charge cavity [11]
2In a kind of content be 40%-60%, the add-on of refining slag [5] is the 10%-15% of raw silicon add-on, after 2 hours refinings purification, open molten silicon the sealing of [13] of portalling, the inclination smelting furnace, with silicon melt from molten silicon portal [13] be injected into insulation 1410 ℃-1544 ℃ mold, white residue separates in refrigerative process gradually, polycrystal silicon ingot generates, promptly get the silicon for solar cell ingot bar by the cutting cleaning, it is characterized in that: after joining raw silicon [14] in the plumbago crucible [2], when opening water inlet pipe [8] and rising pipe [12], open the turnover water valve that is communicated with ruhmkorff coil [3], open the intermediate frequency power supply [4] that is connected with ruhmkorff coil [3] then.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200310105314XA CN1313368C (en) | 2003-10-10 | 2003-10-10 | Production equipment and method of silicon used for solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200310105314XA CN1313368C (en) | 2003-10-10 | 2003-10-10 | Production equipment and method of silicon used for solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1605561A CN1605561A (en) | 2005-04-13 |
| CN1313368C true CN1313368C (en) | 2007-05-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200310105314XA Expired - Fee Related CN1313368C (en) | 2003-10-10 | 2003-10-10 | Production equipment and method of silicon used for solar battery |
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| CN111397367A (en) * | 2019-01-02 | 2020-07-10 | 抚顺市鑫盛不锈钢铸造有限公司 | Furnace shell for medium-frequency induction furnace |
| WO2021212250A1 (en) * | 2020-04-20 | 2021-10-28 | 力玄科技(上海)有限公司 | Triangular plasma melting furnace |
| CN113371715B (en) * | 2021-01-05 | 2022-12-02 | 宁波广新纳米材料有限公司 | Production device for solar cell material nano silicon powder |
| CN113834328B (en) * | 2021-11-26 | 2022-02-15 | 北京煜鼎增材制造研究院有限公司 | Multifunctional high-energy beam micro-area metallurgy smelting furnace and metal material high-flux preparation system |
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