CN1312493A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuit Download PDFInfo
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- CN1312493A CN1312493A CN 01116250 CN01116250A CN1312493A CN 1312493 A CN1312493 A CN 1312493A CN 01116250 CN01116250 CN 01116250 CN 01116250 A CN01116250 A CN 01116250A CN 1312493 A CN1312493 A CN 1312493A
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Abstract
In order to improve drive performance of a voltage regulator (on resistance of an output transistor) while suppressing increases in surface area resistance of an output transistor is reduced by changing the threshold voltage of the output transistor by controlling the back-gate voltages of output transistors of a voltage regulators.
Description
The present invention relates to a kind of SIC (semiconductor integrated circuit), when in an integrated circuit, a charge pump circuit (CP circuit hereinafter referred to as) or on-off element (SW element hereinafter referred to as) at a switching regulator, when MOS (metal-oxide semiconductor (MOS)) transistor is used as the output transistor of Voltagre regulator, can improve driveability by the substrate potential (substratepotential) that changes MOS transistor (reverse grid voltage back gate voltage).
In the circuit diagram as shown in Figure 9, Voltagre regulator output one relevant positive voltage, this is well-known.Just, an existing voltage stabilizer comprises a regulator control circuit, and this regulator control circuit is made up of an error amplifier 13 and an output transistor 14.This error amplifier 13 is used to amplify voltage difference, this voltage difference is the voltage difference between the tie point voltage of the reference voltage V ref of reference voltage circuit 10 and divider resistance 11,12, this divider resistance 11,12 is told the voltage Vout (output voltage hereinafter referred to as) of output end of voltage stabilizer 5.Positive voltage VDD is applied to power voltage terminal 15.
The output voltage of supposing error amplifier 13 is Verr, and the output voltage of reference voltage circuit 10 is Vref, and the voltage of the tie point of divider resistance 11,12 is Va, so, if Vref＞Va, Verr step-down then, on the contrary, if Vref＜Va, then Verr uprises.
Described output transistor 14 is p channel MOS transistors.Thereby, big by the voltage change of grid and source electrode when the Verr step-down, connect resistance decreasing, just make output voltage V out raise during operation.On the contrary, when Verr raise, then the connection resistance of output transistor 14 became big, and output voltage reduces, so that output voltage V out is retained as a fixed value.
The connection resistance R onGOUCHENG of output transistor 14 constitutes a function, and this function is used for voltage Vgs and the transistorized threshold voltage vt between grid and the source electrode, and makes transistorized connection resistance less, so that Vgs-Vt is bigger.Typically, little in order to make by the voltage in transistorized drain region and source region, the connection resistance in this zone is provided by formula (1):
In the formula, μ is a mobility, and Cox is the gate capacitance of unit area, and W is transistorized gate width, and L is a strobe pulse length.
In order to reduce the connection resistance of output transistor, be necessary to increase transistorized gate width W.This has just increased the surface area of integrated circuit (IC), thereby causes cost to improve.
On the other hand, shown in the circuit diagram of Figure 10, the voltage stabilizer of prior art is exported a negative voltage, and this is well-known.Just, an existing voltage stabilizer comprises a regulator control circuit, and this regulator control circuit is made up of an error amplifier 13 and an output transistor 17.This error amplifier 13 is used to amplify voltage difference, and this voltage difference is as the voltage of the tie point of the reference voltage V ref of reference voltage circuit 10 and divider resistance 11,12, and this divider resistance 11,12 is told the voltage-Vout of output end of voltage stabilizer 5.Negative supply voltage-VSS is applied to power voltage terminal 16.The output voltage of supposing error amplifier 13 is-Verr, the output voltage of reference voltage circuit 10 is-Vref, the voltage of the tie point of divider resistance 11,12 is-Va, so, if-Vref＜-Va, then-the Verr step-down (approaching-VSS), opposite, if-Vref＞-Va, then-Verr uprises (near ground voltage GND).
Described output transistor 17 is n channel MOS transistors.Thereby, when-when Verr raises, big by the voltage change of grid and source electrode, connect resistance decreasing, just make output voltage V out reduce during operation.On the contrary, when-Verr step-down, then the connection resistance of output transistor 17 becomes big, and output voltage raises, so that output voltage V out is maintained at a fixed value.
About positive voltage stabilizer, in order to reduce the connection resistance of output transistor, be necessary to increase transistorized gate width W, the connection resistance of output transistor is provided by formula (1).This has just increased the surface area of integrated circuit (IC), thereby causes cost to improve.
As shown in figure 11, show circuit structure as a kind of booster-type SW voltage stabilizer of prior art.
Usually, the energy conversion efficiency of described SW voltage regulator circuit preferably wants high.When SW element 122 is connected,, be necessary to improve energy conversion efficiency in order to reduce because of connecting the loss that resistance brings.The electric current of supposing to flow through described SW element 122 is I, and the connection resistance of described SW element 122 is Ron, and then the loss Pron when SW element 122 is connected is provided by following formula:
Pron=I
*I
*Ron ………………………(2)
For the loss Pron that makes described SW element diminishes, be necessary to reduce the connection resistance of described SW element.Typically, in order to make the voltage in drain region by MOS transistor and source region little, it is connected resistance and is provided by above-mentioned formula (1).
In order to reduce the connection resistance of described MOS transistor, be necessary to increase this transistorized gate width W.This has just increased the surface area of described IC, thereby has increased cost.Increase the gate capacitance that gate width W has also increased described MOS transistor, so when switching on and off MOS transistor, when charging of the gate capacitance of MOS transistor and discharge, loss also increases.In order to drive this bigger electric capacity, the surface area of driving circuit itself has also increased.
As shown in figure 12, show the example of circuit structure of a kind of pair of booster-type of prior art.Among Figure 12, the positive pole of input power supply 220 is connected with 224 with on-off element 221, and negative pole is connected with SW end 222.One electric capacity 225 and a SW element 223 are connected the other end of described SW element 221, and described SW element 224 is connected to the other end of this electric capacity 225.One electric capacity 226 and a load 227 are connected on the other end of described SW element 223.Described SW element 221 to 224 logical and disconnected from the signal controlling of a CP control circuit 228.
Described SW element 221,222,223 and 224 is realized logical and disconnected by the mode with a kind of complementation, just, SW element 223 and 224 disconnects when SW element 221 and 222 is connected, and when SW element 223 and 224 was connected, SW element 221 and 222 disconnected.Afterwards, these SW elements just alternately switch on and off repeatedly.At first, after SW element 221 and 222 was connected the sufficiently long time, the voltage identical with the voltage of power supply 220 was stored in the electric capacity 225.The voltage of supposing power supply 220 is VDD, and then voltage VDD is stored in the electric capacity 225.
Then, when SW element 221 and 222 disconnects and SW element 223 and 224 is connected, become voltage for power supply 220 at the voltage of the electric capacity 225 of SW element 224 sides, VDD just, the charging of electric capacity 225 is stored.So, the voltage of described SW element 223 is 2*VDD because of the voltage of electric capacity 225 becomes.This voltage is maintained in the electric capacity 226 and is applied in the load 227.
Described SW element logical and open closely often realize to the frequency of some MHz orders of magnitude with some kHz.Ideally, preferably, allow the SW element have 0 mouthful connection resistance, the charge and discharge of instantaneous realization electric capacity.Yet in fact, because the resistance of on-off element, the time constant that charge and discharge are based on described electric capacity and described SW element realizes.
During the charge and discharge of SW element, because described SW component resistance value also can produce loss.
Usually, the energy conversion efficiency of described CP circuit preferably wants high.When described SW element 221 to 224 is connected,, be necessary to improve energy conversion efficiency in order to reduce because of connecting the loss that resistance brings.The electric current of supposing to flow through described SW element is I, and the connection resistance of described SW element is Ron, so, for the loss Pron that makes the SW element diminishes, is necessary to reduce the connection resistance of SW element, and it can be provided by above-mentioned formula (2).
As shown in figure 13, be the SW element 222 that is assembled by a N-channel MOS transistor and a p channel transistor and 224 structure example.Among Figure 13, mark 230 expressions one N-channel MOS transistor, its effect is identical with SW element 222 shown in Figure 12, mark 231 expressions one P channel MOS transistor, its effect is identical with SW element 224 shown in Figure 12.Among Figure 13, the source electrode of P channel MOS transistor 231 and substrate are connected the anodal VDD of power supply.On the other hand, the source electrode of N-channel MOS transistor 230 and substrate are connected earthing power supply GND.
When described SW element was made of MOS transistor, in order to make the voltage in drain region by MOS transistor and source region little, it was connected resistance and is provided by above-mentioned formula (1).
In order to reduce connection resistance, be necessary to increase described transistorized gate width W by the described SW element of MOS transistor manufacturing.This has just increased the surface area of described IC, thereby has increased cost.Increase the gate capacitance that gate width W has also increased described MOS transistor, so when switching on and off MOS transistor, when charging of the gate capacitance of MOS transistor and discharge, loss also increases.In order to drive this bigger electric capacity, the surface area of driving circuit itself has also increased
Yet, in order to reduce the connection resistance of output transistor or SW element, be necessary to increase the surface area of described MOS transistor, thereby this has also increased the cost of IC circuit.
In order to solve the problems referred to above that run in the prior art, the objective of the invention is to reduce the connection resistance of MOS transistor, and suppressed the increase of surface area of the MOS transistor of SW element.
Fig. 1 illustrates the voltage regulator circuit of first embodiment of the invention;
Fig. 2 illustrates the voltage regulator circuit of second embodiment of the invention;
Fig. 3 illustrates the voltage regulator circuit of third embodiment of the invention;
Fig. 4 illustrates the voltage regulator circuit of fourth embodiment of the invention;
Fig. 5 illustrates the booster-type SW voltage stabilizer of fifth embodiment of the invention;
Fig. 6 illustrates the step-by-step movement SW voltage stabilizer of sixth embodiment of the invention;
Fig. 7 illustrates the step-by-step movement CP voltage stabilizer of seventh embodiment of the invention;
Fig. 8 illustrates eighth embodiment of the invention;
Fig. 9 illustrates a kind of voltage regulator circuit of prior art, and it exports a positive voltage;
Figure 10 illustrates a kind of voltage regulator circuit of prior art, and it exports a negative voltage;
Figure 11 illustrates a kind of switch stabilizer control circuit of prior art;
Figure 12 illustrates a kind of CP circuit of prior art;
Figure 13 illustrates a kind of SW element of prior art.
In order to address the above problem, the invention provides a kind of underlayer voltage on-off circuit, it is used for the voltage-stablizer electricity The output transistor of the SW element of road, SW voltage-stablizer or CP circuit, like this, when this SW element During connection, the underlayer voltage of this SW element changes, so that the threshold voltage of this SW element reduces this SW Connection resistance thereby the reduction of element.
First embodiment
Below, will be described the preferred embodiments of the present invention in conjunction with the accompanying drawings.Fig. 1 is a kind of V/R circuit diagram of first embodiment of the invention.Reference voltage circuit 10, divider resistance 11 and 12, and error amplifier 13 and are used for the identical of existing voltage stabilizer, and it exports a positive voltage.
In the circuit of prior art, the substrate potential of output transistor 20 is connected with the supply voltage VDD of positive voltage end 15, but is changed by underlayer voltage on-off circuit 21.The substrate potential of transistor 20 can be compared the output signal conversion of device 25.This comparer 25 with the voltage Va of divider resistance 11 and 12 tie points and from the output voltage V ref of reference voltage circuit 10 deduct the voltage V26 of bucking voltage power supply 26 and the voltage (Vref-V26 just) that obtains as input, like this, if Va＞(Vref-V26), then the output of comparer 25 is just high, otherwise, if Va＜(Vref-V26), then the output of comparer 25 is just low.When the output of comparer 25 was high, the switch of underlayer voltage on-off circuit 21 22 was connected, and just, when Va＞(Vref-V26), the substrate potential of transistor 20 is connected on the VDD.
On the other hand, when the output of comparer 25 is low, the switch 23 of underlayer voltage on-off circuit 21 is connected, just, when Va＜(Vref-V26), the voltage V24 that the substrate potential of transistor 20 is regulated power supply 24 by a underlayer voltage is connected to one than on the low voltage of VDD, promptly is connected on the VDD-V24.
In load relatively hour, when the voltage stabilizer regular event, the voltage Verr of error amplifier 13 changes by this way, that is, the voltage Vref of reference voltage circuit 10 equates with the voltage Va of divider resistance 11 and 12 tie points, i.e. Vref=Va.At this moment, because switch 22 is connected, the substrate potential of transistor 20 is connected to VDD, so action is identical with prior art just.
When the load that is connected to output end of voltage stabilizer 5 is big, the driveability deficiency of transistor 20, the voltage Vout of output voltage terminal 5 reduces, and when becoming Va＜(Vref-V26), because switch 23 is connected, the substrate potential of transistor 20 is connected to VDD-V24.When the substrate potential of transistor 20 was connected to VDD-V24, the threshold voltage vt that then is used for transistor 20 reduced.When threshold voltage vt reduced, according to above-mentioned formula (1), then the connection resistance of transistor 20 also reduced, thereby a bigger electric current can be applied in the load.
The value that underlayer voltage is regulated the voltage V24 of power supply 24 is used as the substrate potential that causes transistor 20 and reduces about value of 0.1 to 0.5V with respect to the source voltage of transistor 20.The threshold voltage of transistor 20 reduces to such an extent that more strengthen with respect to voltage V24.Therefore the connection resistance of transistor 20 reduces, and still, when the reduction amount surpasses 0.6V with respect to the source voltage of transistor 20, is present in the source electrode of transistor 20 and the pn knot of the parasitism between the substrate and is switched on.Therefore, be necessary voltage V24 is arranged in magnitude of voltage in the scope, in this scope, parasitic pn knot can not connected.It must not be power supply that underlayer voltage is regulated power supply 24, also can be one to be used to produce the circuit of voltage V24.In addition, switch 22 and 23 MOS transistor that can be played single on-off action replace.If switch 23 is replaced with the position relation that underlayer voltage is regulated power supply 24, also can obtain same result.
The value of approximately several mV to 100mV is by the special use voltage V26 of voltage source 26 by way of compensation.
If comparer 25 has magnetic hysteresis knot, then operation can become more stable.Second embodiment
Fig. 2 is a kind of V/R circuit diagram of second embodiment of the invention.Reference voltage circuit 10, divider resistance 11 and 12, and error amplifier 13 and are used for the identical of existing voltage stabilizer, and it exports a positive voltage.
In the circuit of prior art, the substrate potential of output transistor 20 is connected with supply voltage VDD, but in the present invention, the substrate potential of transistor 20 can be changed by underlayer voltage on-off circuit 21.The substrate potential of transistor 20 can be compared the output signal conversion of device 27.This comparer 27 with the voltage Vout of the output terminal 5 of voltage stabilizer and from the input supply voltage VDD of voltage stabilizer deduct the voltage V28 of bucking voltage power supply 28 and the voltage (being VDD-V28) that obtains as input, like this, if Vout＜(VDD-V28), then the output of comparer 27 is just high, otherwise, if Vout＞(VDD-V28), then the output of comparer 27 is just low.When the output of comparer 27 was high, the switch of underlayer voltage on-off circuit 21 22 was connected, and just, when Vout＜(VDD-V28), the substrate potential of transistor 20 is connected to VDD.On the other hand, when the output of comparer 27 is low, the switch 23 of underlayer voltage on-off circuit 21 is connected, just, when Vout＞(VDD-V28), the voltage V24 that the substrate potential of transistor 20 is regulated power supply 24 by a underlayer voltage is connected to one than on the low voltage of VDD, promptly is connected on the VDD-V24.When high relatively and VDD-Vout was enough big when the input supply voltage of voltage stabilizer, because switch 22 is connected, the substrate potential of transistor 20 was connected to VDD, so action is identical with prior art just.
When the input supply voltage VDD of voltage stabilizer reduced, the grid by being used for oxide-semiconductor control transistors 20 and the voltage of source electrode can not be greater than supply voltages.Because the connection resistance of transistor 20 increases, the electric current that voltage stabilizer can offer load reduces driveability thereby deficiency.Yet when VDD was reduced to Vout＞(VDD-V28), because switch 23 is connected, the substrate potential of transistor 20 was connected to VDD-V24.When the substrate potential of transistor 20 was connected to VDD-V24, the threshold voltage vt of transistor 20 reduced.When threshold voltage vt reduced, according to above-mentioned formula (1), transistorized connection resistance also reduced, thereby a bigger electric current can be applied in the load.
The value that underlayer voltage is regulated the voltage V24 of power supply 24 is used as the substrate potential that causes transistor 20 and reduces about value of 0.1 to 0.5V with respect to the source voltage of transistor 20.The threshold voltage of transistor 20 reduces to such an extent that more strengthen with respect to voltage V24.Therefore the connection resistance of transistor 20 reduces, and still, when the reduction amount surpasses 0.6V with respect to the source voltage of transistor 20, is present in the source electrode of transistor 20 and the pn knot of the parasitism between the substrate and is switched on.Therefore, be necessary voltage V24 is arranged in magnitude of voltage in the scope, in this scope, parasitic pn knot can not connected.In addition, switch 22 and 23 MOS transistor that can be played single on-off action replace.If switch 23 is replaced with the position relation that underlayer voltage is regulated power supply 24, also can obtain same result.
The value of approximately several mV to V is by the special use voltage V28 of voltage source 28 by way of compensation.
If comparer 27 has magnetic hysteresis knot, then operation can become more stable.The 3rd embodiment
Fig. 3 is a kind of V/R circuit diagram of third embodiment of the invention.Reference voltage circuit 10, divider resistance 11 and 12, and error amplifier 13 and are used for the identical of existing voltage stabilizer, and it exports a negative voltage.
In the circuit of prior art, the substrate potential of output transistor 30 is connected with the supply voltage-VSS of negative supply voltage end 16, but in the present invention, the substrate potential of transistor 30 can be changed by underlayer voltage on-off circuit 31.The substrate potential of transistor 30 can be compared the output signal conversion of device 35.This comparer 35 with the voltage of the output voltage-Vref of the voltage Va of divider resistance 11 and 12 tie points and reference voltage circuit 10 and bucking voltage power supply 36 V36's and voltage (promptly-Vref+V36) as input, like this, if-Va＞(Vref+V36), then the output of comparer 35 is just high, otherwise, if-Va＜(Vref+V36), then the output of comparer 35 is just low.When the output of comparer 35 was low, the switch 32 of underlayer voltage on-off circuit 31 was connected, just, and when-Va＜(Vref+V36) time, the substrate potential of transistor 30 is connected to-VSS.On the other hand, when the output of comparer 35 is high, the switch 33 of underlayer voltage on-off circuit 31 is connected, just, as-Va＞(Vref+V36) time, the voltage V34 that the substrate potential of transistor 30 is regulated power supply 34 by a underlayer voltage is connected on the high voltage of a ratio-VSS, promptly be connected to-VSS+V34 on.
In load relatively hour, when the voltage stabilizer regular event, the voltage-Verr of error amplifier 13 changes by this way, that is, the voltage-Vref of reference voltage circuit 10 equates with the voltage-Va of divider resistance 11 and 12 tie points, promptly-and Vref=-Va.At this moment, because switch 32 is connected, the substrate potential of transistor 30 is connected to-VSS, so action is identical with prior art just.
When the load that is connected to output end of voltage stabilizer 5 is big, the driveability deficiency of transistor 20, the voltage of output voltage terminal 5-Vout raises (near ground voltage), when becoming-Va＞(Vref+V36) time, because switch 33 is connected, the substrate potential of transistor 30 is connected to-VSS+V34.When the substrate potential of transistor 30 be connected to-during VSS+V34, the threshold voltage vt that then is used for transistor 30 reduces.When threshold voltage vt reduced, according to above-mentioned formula (1), then the connection resistance of transistor 30 also reduced, thereby a bigger electric current can be applied in the load.
The value that underlayer voltage is regulated the voltage V34 of power supply 34 is used as the substrate potential that causes transistor 30 and reduces about value of 0.1 to 0.5V with respect to the source voltage of transistor 30.The threshold voltage of transistor 30 reduces to such an extent that more strengthen with respect to voltage V34.Therefore the connection resistance of transistor 30 reduces, and still, when the reduction amount surpasses 0.6V with respect to the source voltage of transistor 30, is present in the source electrode of transistor 30 and the pn knot of the parasitism between the substrate and is switched on.Therefore, be necessary voltage V34 is arranged in magnitude of voltage in the scope, in this scope, parasitic pn knot can not connected.In addition, switch 32 and 33 MOS transistor that can be played single on-off action replace.If switch 33 is replaced with the position relation that underlayer voltage is regulated power supply 34, also can obtain same result.
The value of approximately several mV to 100mV is by the special use voltage V36 of voltage source 36 by way of compensation.
If comparer 35 has magnetic hysteresis knot, then operation can become more stable.The 4th embodiment
Fig. 4 is a kind of V/R circuit diagram of fourth embodiment of the invention.Reference voltage circuit 10, divider resistance 11 and 12, and error amplifier 13 and are used for the identical of existing voltage stabilizer, and it exports a negative voltage.
In the circuit of prior art, the substrate potential of output transistor 30 is connected with the supply voltage-VSS of negative supply voltage end 16, but in the present invention, the substrate potential of transistor 30 can be changed by underlayer voltage on-off circuit 31.The substrate potential of transistor 30 can be compared the output signal conversion of device 37.This comparer 37 with the voltage of the input supply voltage-VSS of the voltage-Vout of the output terminal 5 of voltage stabilizer and voltage stabilizer and bucking voltage power supply 38 V38's and voltage (promptly-VSS+V38) as input, like this, if-Vout＜(VSS+V38), then the output of comparer 37 is just high, otherwise, if-Vout＞(VSS+V38), then the output of comparer 37 is just low.When the output of comparer 37 was low, the switch 32 of underlayer voltage on-off circuit 31 was connected, just, and when-Vout＞(VSS+V38) time, the substrate potential of transistor 30 is connected to-VSS.On the other hand, when the output of comparer 37 is high, the switch 33 of underlayer voltage on-off circuit 31 is connected, just, as-Vout＜(VSS+V38) time, the voltage V34 that the substrate potential of transistor 30 is regulated power supply 34 by a underlayer voltage be connected to one be higher than-voltage of VSS on, promptly be connected to-VSS+V34 on.
As the input supply voltage-VSS of voltage stabilizer low relatively and-when the difference of VSS and the absolute value of-Vout was enough big, because switch 32 is connected, the substrate potential of transistor 30 was connected to-VSS, so, move just identical with prior art.
When the input supply voltage of voltage stabilizer-VSS reduced (being that its absolute value reduces), then the voltage of grid by being used for oxide-semiconductor control transistors 30 and source electrode can not be greater than supply voltage.The driveability of transistor 30 is therefore not enough, and the electric current that voltage stabilizer is applied in the load reduces.Yet, when-VSS reduces (being that its absolute value reduces) to-Vout＜(VSS+V38) time, because switch 33 is connected, the substrate potential of transistor 30 is connected to-VSS+V34, and the threshold voltage vt that is used for transistor 30 reduces.When threshold voltage vt reduced, according to above-mentioned formula (1), then the connection resistance of transistor 30 also reduced, thereby a bigger electric current can be applied in the load.
The value that underlayer voltage is regulated the voltage V34 of power supply 34 is used as the substrate potential that causes transistor 30 and reduces about value of 0.1 to 0.5V with respect to the source voltage of transistor 30.The threshold voltage of transistor 30 reduces to such an extent that more strengthen with respect to voltage V34.Therefore the connection resistance of transistor 30 reduces, and still, when the reduction amount surpasses 0.6V with respect to the source voltage of transistor 30, is present in the source electrode of transistor 30 and the pn knot of the parasitism between the substrate and is switched on.Therefore, be necessary voltage V34 is arranged in magnitude of voltage in the scope, in this scope, parasitic pn knot can not connected.In addition, switch 32 and 33 MOS transistor that can be played single on-off action replace.If switch 33 is replaced with the position relation that underlayer voltage is regulated power supply 34, also can obtain same result.
The value of approximately several mV to V is by the special use voltage V38 of voltage source 38 by way of compensation.
If comparer 37 has magnetic hysteresis knot, then operation can become more stable.The 5th embodiment
Fig. 5 is the circuit diagram of a kind of SW voltage stabilizer of fifth embodiment of the invention.Its input power supply 120, coil 121, diode 123, SW regulator control circuit 130, electric capacity 124 and load 125, all be used for having now the identical of voltage stabilizer.Among Fig. 5, a SW element 140 has substituted SW element 122 of the prior art.The drain electrode of this SW element 140, grid and source electrode use the mode identical with SW element of the prior art to be connected, and still, the substrate potential of this SW element 140 can be by 150 conversions of substrate potential on-off circuit.This substrate potential on-off circuit 150 receives the signal identical with the grid of this SW element 140, gauge tap 152 and 153 break-make.As shown in Figure 5, this SW element 140 is for to be made by the N-channel MOS transistor.When the grid voltage of this SW element, when just the voltage Vext of the end 103 of this SW element controling circuit 131 uprised, this SW element 140 was just connected.When this SW element 140 was connected, when just Vext was high, substrate potential on-off circuit 150 was connected switch 152.Otherwise when this SW element 140 disconnected, when just Vext was low, substrate potential on-off circuit 150 was connected switch 153.
When switch 153 was connected, the substrate potential of SW element 140 became identical with source voltage, and mode of operation is identical with the SW element of prior art just.When switch 152 was connected, the voltage table of underlayer voltage being regulated power supply 151 was shown V151, and the substrate potential of described SW element becomes one and exceeds the voltage of a voltage V151 than source voltage.
When the substrate potential of described SW element 140 is connected to one when exceeding on the voltage of voltage V151 than source voltage, the threshold voltage vt of SW element 140 reduces.When threshold voltage vt reduced, as above-mentioned formula (1) as can be known, transistorized connection resistance also reduced.If transistorized connection resistance also reduces, according to above-mentioned formula (2), when transistor was connected, loss had just diminished, and the energy conversion efficiency of this SW voltage stabilizer can be improved.
Typically, when the threshold voltage of MOS transistor reduced, leakage current increased when MOS transistor disconnected.When this SW element disconnected, when there was leakage current in this SW element, so reactive power occurs, the energy conversion efficiency of SW element reduced.Yet in the present invention, when this SW element disconnected, the threshold voltage of this SW element can become with normal the same, and the phenomenon of efficient reduction can not take place to cause because of the increase of leakage current.
The value that underlayer voltage is regulated the voltage V151 of power supply 151 is used as the substrate potential that causes described SW element 140 increases about value of 0.1 to 0.5V with respect to the source voltage of this SW element 140.The threshold voltage vt of this SW element 140 reduces to such an extent that more strengthen with respect to voltage V151.Therefore the connection resistance of this SW element 140 reduces, and still, when the reduction amount surpasses 0.6V with respect to the source voltage of SW element 140, is present in the source electrode of SW element 140 and the pn knot of the parasitism between the substrate and is switched on.Therefore, be necessary voltage V151 is arranged in magnitude of voltage in the scope, in this scope, parasitic pn knot can not connected.In addition, it must not be supply voltage that underlayer voltage is regulated power supply 151, also can be the circuit of a generation voltage V151.
Among Fig. 5, substrate potential on-off circuit 150 utilizes the signal of described SW element 140 controlling the break-make of switch 152 and 153, so when described SW element 140 was connected, switch 152 was connected, when described SW element 140 disconnected, switch 153 was connected.Substrate potential on-off circuit 150 also can be obtained same result by independent signal controlling.
In addition, switch 152 and 153 MOS transistor that can be played single on-off action replace.If switch 152 is replaced with the position relation that underlayer voltage is regulated power supply 151, also can obtain same result.The 6th embodiment
Figure 5 shows that the example of a booster-type SW voltage stabilizer.But,, also can obtain same result, as shown in Figure 6 by switching a base potential that is used for a kind of SW element 160 of booster-type SW voltage stabilizer.Among Fig. 6, SW element 160 is P channel MOS transistors, has a substrate potential by 150 transformations of substrate potential on-off circuit.When on-off element 160 is connected, switch 152 is connected, and when on-off element 160 disconnected, switch 153 was connected, just, substrate potential when on-off element 160 disconnects is identical with the source potential of on-off element 160, thereby when on-off element 160 was connected, the substrate potential of on-off element 160 hanged down the voltage V151 that a underlayer voltage is regulated power supply 151 compared with the voltage Vin of input power supply 120, just, one is the voltage of Vin-V151.When substrate potential reduced, the threshold voltage of on-off element 160 reduced, and the energy conversion efficiency of on-off element raises.
In addition, switch 152 and 153 MOS transistor that can be played single on-off action replace.If switch 152 is replaced with the position relation that underlayer voltage is regulated power supply 151, also can obtain same result.The 7th embodiment
Figure 7 shows that a kind of CP circuit diagram of seventh embodiment of the invention.Input power supply 220, electric capacity 225 and 226, load 227, SW element 221 and 223 and control circuit 228 are all with of the prior art identical.Among Fig. 7, SW element 242 and 244 has replaced SW element 222 of the prior art and 224.This SW element 242 uses the mode identical with 224 with SW element 222 of the prior art to be connected with 244 drain electrode, grid and source electrode, and still, this SW element 242 and 244 substrate potential can be by substrate potential on- off circuit 252 and 254 conversions.Substrate potential on-off circuit 252 receives the signal identical with the grid of SW element 242, and is controlling the break-make of switch 255 and 256.
Equally, substrate potential on-off circuit 254 receives the signal identical with the grid of SW element 244, and is controlling the break-make of switch 257 and 258.The initial operation of substrate potential on-off circuit 252 at first, is described.Switch 255 and 256 is switched on and off by the mode with complementation.(at this moment SW element 242 is connected when the signal of SW element 242 is received, because SW element 242 is N-channel MOS transistors, its signal is strong), switch 256 is connected, disconnect (at this moment and work as SW element 242, because the SW element is 242 1 N-channel MOS transistors, its signal is weak), switch 255 is connected.When on-off element 242 disconnected, the substrate potential of this SW element 242 became identical with source voltage, as prior art.When on-off element 242 was connected, the substrate potential of this SW element 242 became a voltage that exceeds the voltage V251 of underlayer voltage adjusting power supply 251 than source voltage.
When the substrate potential of described SW element 242 is connected to one when exceeding the voltage of voltage V251 than source voltage, the threshold voltage vt of this SW element 242 reduces.When threshold voltage vt reduced, as above-mentioned formula (1), described transistorized connection resistance also reduced.If transistorized connection resistance reduces, as above-mentioned formula (2), when described transistor was connected, the loss of generation had just diminished, thereby the energy conversion efficiency of described CP circuit improves.
Usually, when the threshold voltage of a MOS transistor reduced, leakage current will increase when it disconnected.After having leakage current, when described SW element disconnects, will produce reactive power, the energy conversion efficiency of described CP circuit will reduce.Yet in the present invention, when described SW element disconnected, the threshold voltage of this SW element just became with normal the same, and the phenomenon of efficient reduction can not take place to cause because of the increase of leakage current.
The value that underlayer voltage is regulated the voltage V251 of power supply 251 is used as the substrate potential that causes described SW element 242 increases about value of 0.1 to 0.5V with respect to the source voltage of this SW element 242.The threshold voltage vt of this SW element 242 reduces to such an extent that more strengthen with respect to voltage V251.Therefore the connection resistance of this SW element 242 reduces, and still, when the reduction amount surpasses 0.6V with respect to the source voltage of SW element 242, is present in the source electrode of SW element 242 and the pn knot of the parasitism between the substrate and is switched on.Therefore, be necessary voltage V251 is arranged in magnitude of voltage in the scope, in this scope, parasitic pn knot can not connected.In addition, it must not be supply voltage that underlayer voltage is regulated power supply 251, also can be the circuit of a generation voltage V251.
Among Fig. 7, substrate potential on-off circuit 252 utilizes the signal of described SW element 242 controlling the break-make of switch 255 and 256, so when described SW element 242 was connected, switch 256 was connected, when described SW element 242 disconnected, switch 255 was connected.Substrate potential on-off circuit 252 also can be obtained same result by independent signal controlling.
Next, the initial operation of substrate potential on-off circuit 254 is described.Switch 257 and 258 is switched on and off by the mode with complementation.(at this moment SW element 244 is connected when the signal of SW element 244 is received, because SW element 244 is P channel MOS transistors, its signal is weak), switch 258 is connected, disconnect (at this moment and work as SW element 244, because SW element 244 is P channel MOS transistors, its signal is strong), switch 257 is connected.When on-off element 244 disconnected, the substrate potential of this SW element 244 became identical with source voltage, as prior art.When on-off element 244 was connected, the substrate potential of this SW element 244 becomes than source voltage hanged down the voltage that underlayer voltage is regulated the voltage V253 of power supply 253.
When the substrate potential of described SW element 244 is connected to one when hanging down the voltage of voltage V251 than source voltage, the threshold voltage vt of this SW element 244 reduces.When threshold voltage vt reduced, as above-mentioned formula (1), described transistorized connection resistance also reduced.If this transistorized connection resistance reduces, as above-mentioned formula (2), when described transistor was connected, the loss of generation had just diminished, thereby the energy conversion efficiency of described CP circuit improves.
Usually, when the threshold voltage of MOS transistor reduced, leakage current will increase when it disconnected.After having leakage current, when described SW element disconnects, will produce reactive power, the energy conversion efficiency of described CP circuit will reduce.Yet in the present invention, when described SW element disconnected, the threshold voltage of this SW element just became with normal the same, and the phenomenon of efficient reduction can not take place to cause because of the increase of leakage current.
The value that underlayer voltage is regulated the voltage V253 of power supply 253 is used as the substrate potential that causes described SW element 244 increases about value of 0.1 to 0.5V with respect to the source voltage of this SW element 244.The threshold voltage vt of this SW element 244 reduces to such an extent that more strengthen with respect to voltage V253.Therefore the connection resistance of this SW element 244 reduces, and still, when the reduction amount surpasses 0.6V with respect to the source voltage of SW element 244, is present in the source electrode of SW element 244 and the pn knot of the parasitism between the substrate and is switched on.Therefore, be necessary voltage V253 is arranged in magnitude of voltage in the scope, in this scope, parasitic pn knot can not connected.In addition, it must not be supply voltage that underlayer voltage is regulated power supply 253, also can be the circuit of a generation voltage V253.
Among Fig. 7, substrate potential on-off circuit 254 utilizes the signal of described SW element 244 controlling the break-make of switch 257 and 258, so when described SW element 244 was connected, switch 258 was connected, when described SW element 244 disconnected, switch 257 was connected.Substrate potential on-off circuit 254 also can be obtained same result by independent signal controlling.
As shown in Figure 7, underlayer voltage conversion of the present invention is to realize that with two switches and on-off element 242 and 244 still, its any one switch all can improve the energy conversion efficiency of described CP circuit.
In addition, as shown in Figure 7, underlayer voltage conversion of the present invention is to realize with described on-off element 242 and 244, but, as with as described in on-off element 221 the same with 223, when each SW element switches,, obviously can obtain same result by so that the mode that threshold voltage reduces realizes the reference voltage conversion.
In order to improve the energy conversion efficiency of described CP circuit, preferably utilize many SW elements to realize underlayer voltage conversion of the present invention.
Figure 7 shows that an example of booster-type CP circuit, still, when on the SW element that the present invention is applied to step-by-step movement or booster-type CP circuit, also can obtain same result, but to the not infringement of knot of product.
In addition, switch 255 and 258 MOS transistor that can be played single on-off action replace.If switch 256 is replaced with the position relation that underlayer voltage is regulated power supply 251, perhaps, switch 258 and underlayer voltage are regulated the position relation displacement of power supply 253, also can obtain same result.The 8th embodiment
In embodiment one to seven, realized the conversion of output transistor and SW component substrate electromotive force, but but there is such situation, when a VR circuit, SW regulator control circuit, SW element driving circuit, CP control circuit and SW element or the like are integrated, can not realize the substrate potential conversion owing to the impurity of substrate.For example,, on a p type substrate, form the n-trap,, just can change the substrate potential of this P channel MOS transistor by changing the electromotive force of this n-trap in order in n-trap (n-well), to make a P channel MOS transistor.Yet the N-channel MOS transistor is made on a p type substrate.And when this p type substrate was connected on the lowest electric potential of described integrated circuit, the transistorized substrate potential of this N-channel MOS was freely to be transformed into the electromotive force identical with p type substrate.
Yet as shown in Figure 8, by providing insulation for Bi-CMOS (bipolar complementary metal oxide semiconductor) structure, the substrate potential of the output transistor of described voltage regulator circuit but can freely be changed, and irrelevant with the dopant type of substrate.Figure 8 shows that the cross-sectional structure of an insulated N-channel MOS transistor and a P channel MOS transistor.On a P type substrate, form an insulated N type zone.Form described P channel MOS transistor in described N type zone, just can change the substrate potential of described P channel MOS transistor by the electromotive force that changes described N type zone.Described N-channel MOS transistor is to form in the p-trap in N type zone, forms a N-channel MOS transistor in this p-well area.The transistorized substrate potential of described N-channel MOS can be changed by the electromotive force that changes described p-well area.Its BG end is that substrate potential is imposed on the transistorized end of described N-channel MOS.
Therefore, for a Bi-CMOS, by with a silicon-on-insulator (Silicon-On-Insulator) structure, the substrate potential of the output transistor of described voltage regulator circuit obviously just can freely be changed, and irrelevant with the dopant type of substrate.
The result who changes the substrate potential of described output transistor is that voltage stabilizer of the present invention can improve driveability, and does not increase the surface area of output transistor.
Therefore, in the present invention, when the SW element switches, just can reduce the connection resistance of described SW voltage stabilizer and CP circuit by the substrate potential that changes described SW element.Therefore also can improve energy conversion efficiency, suppress the long-pending increase of SW element surface simultaneously again.
Claims (12)
1. voltage stabilizer, be used for providing electric energy to load from a P channel MOS transistor, has the divider resistance that is used to tell an output voltage, one error amplifying circuit, be used for the output voltage and the voltage difference between a reference voltage of described divider resistance are amplified, and a P channel MOS transistor, comprising:
One comparator circuit is used for the output voltage and the described reference voltage of described divider resistance are compared; And
Utilize the output of described comparator circuit to change the device of the substrate potential of described P channel MOS transistor.
2. voltage stabilizer, be used for providing electric energy to load from a P channel MOS transistor, has the divider resistance that is used to tell an output voltage, one error amplifying circuit, be used for the output voltage and the voltage difference between a reference voltage of described divider resistance are amplified, and a P channel MOS transistor, comprising:
One testing circuit is used to detect the voltage difference of the input voltage and the output voltage of voltage stabilizer; And
Utilize described voltage difference to change the element of the substrate potential of described P channel MOS transistor.
3. voltage stabilizer, be used for providing electric energy to load from a N-channel MOS transistor, has the divider resistance that is used to tell an output voltage, one error amplifying circuit, be used for the output voltage and the voltage difference between a reference voltage of described divider resistance are amplified, and a N-channel MOS transistor, comprising:
One comparator circuit is used for the output voltage and the described reference voltage of described divider resistance are compared; And
Utilize the output of described comparator circuit to change the device of the transistorized substrate potential of described N-channel MOS.
4. voltage stabilizer, be used for providing electric energy to load from a N-channel MOS transistor, has the divider resistance that is used to tell an output voltage, one error amplifying circuit, be used for the output voltage and the voltage difference between a reference voltage of described divider resistance are amplified, and a N-channel MOS transistor, comprising:
One testing circuit is used to detect the voltage difference of the input voltage and the output voltage of voltage stabilizer; And
Utilize described voltage difference to change the element of the transistorized substrate potential of described N-channel MOS.
5. according to any one voltage stabilizer of claim 1 to 4, it is characterized in that: form the some of described circuit or all elements have a silicon insulator structure.
6. according to any one voltage stabilizer of claim 1 to 4, it is characterized in that: form the some of described circuit or all elements have the bipolar complementary metal oxide semiconductor structure.
7. switching regulator, on-off element and a driving circuit that is used to switch on and off described on-off element with at least one MOS structure comprise:
Be used to change the device of the substrate potential of described on-off element;
The substrate potential of described on-off element is controlled by this way, that is, when described on-off element was connected, the threshold voltage of described on-off element reduced.
8. switching regulator according to claim 7 is characterized in that: form the some of described circuit or all elements have a silicon insulator structure.
9. voltage stabilizer according to claim 7 is characterized in that: form the some of described circuit or all elements have the bipolar complementary metal oxide semiconductor structure.
10. charge pump circuit, on-off element and a driving circuit that is used to switch on and off described on-off element with at least one MOS structure comprise:
Be used to change the device of the substrate potential of described on-off element;
The substrate potential of described on-off element is controlled by this way, that is, when described on-off element was connected, the threshold voltage of described on-off element reduced.
11. charge pump according to claim 10 is characterized in that: form the some of described circuit or all elements have a silicon insulator structure.
12. charge pump according to claim 10 is characterized in that: form the some of described circuit or all elements have the bipolar complementary metal oxide semiconductor structure.
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000029483A JP3576912B2 (en) | 1999-02-24 | 2000-02-07 | Outline enhancement device, image forming device using the same, image signal processing method, and image forming method using the same |
| JP2000053663 | 2000-02-29 | ||
| JP53663/2000 | 2000-02-29 | ||
| JP65304/2000 | 2000-03-09 | ||
| JP2000065304 | 2000-03-09 | ||
| JP237469/2000 | 2000-08-04 | ||
| JP2000237469 | 2000-08-04 | ||
| JP29483/2001 | 2001-02-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1312493A true CN1312493A (en) | 2001-09-12 |
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ID=27481007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 01116250 Pending CN1312493A (en) | 2000-02-07 | 2001-02-28 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1312493A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100352059C (en) * | 2002-10-21 | 2007-11-28 | 松下电器产业株式会社 | Semiconductor integrated circuit device |
| CN100409137C (en) * | 2004-02-25 | 2008-08-06 | 美国凹凸微系有限公司 | Low dropout voltage regulator |
| CN100449449C (en) * | 2006-02-15 | 2009-01-07 | 启攀微电子（上海）有限公司 | Circuit for enhancing driving capability of low voltage-difference linear voltage manostat |
| CN1702587B (en) * | 2004-05-13 | 2010-04-14 | 马维尔国际贸易有限公司 | Voltage regulator with high output impedance generator |
| US7772813B2 (en) | 2005-12-21 | 2010-08-10 | Panasonic Corporation | Power supply circuit |
| US7786697B2 (en) | 2004-11-12 | 2010-08-31 | Mediatek Inc. | Battery charger system |
| CN104049663A (en) * | 2013-03-15 | 2014-09-17 | 慧荣科技股份有限公司 | Charge injection type switched capacitor voltage stabilizer applied to high load current |
| CN105700610A (en) * | 2016-01-29 | 2016-06-22 | 上海华虹宏力半导体制造有限公司 | Ldo circuit |
| CN106526273A (en) * | 2016-10-24 | 2017-03-22 | 上海华力微电子有限公司 | Precise bleeder circuit for negative voltage measurement |
| WO2021057450A1 (en) * | 2019-09-25 | 2021-04-01 | 圣邦微电子（北京）股份有限公司 | Switching converter and low voltage startup circuit thereof |
| CN116225135A (en) * | 2023-05-11 | 2023-06-06 | 上海海栎创科技股份有限公司 | Low-dropout linear voltage regulator |
| WO2024078180A1 (en) * | 2022-10-12 | 2024-04-18 | 圣邦微电子(苏州)有限责任公司 | Charge pump circuit |
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2001
- 2001-02-28 CN CN 01116250 patent/CN1312493A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100352059C (en) * | 2002-10-21 | 2007-11-28 | 松下电器产业株式会社 | Semiconductor integrated circuit device |
| CN100409137C (en) * | 2004-02-25 | 2008-08-06 | 美国凹凸微系有限公司 | Low dropout voltage regulator |
| CN1702587B (en) * | 2004-05-13 | 2010-04-14 | 马维尔国际贸易有限公司 | Voltage regulator with high output impedance generator |
| CN1696859B (en) * | 2004-05-13 | 2010-06-02 | 马维尔国际贸易有限公司 | Voltage regulator for separately obtaining pull-up voltage |
| US7786697B2 (en) | 2004-11-12 | 2010-08-31 | Mediatek Inc. | Battery charger system |
| US7772813B2 (en) | 2005-12-21 | 2010-08-10 | Panasonic Corporation | Power supply circuit |
| CN1987711B (en) * | 2005-12-21 | 2011-02-16 | 松下电器产业株式会社 | Power supply circuit |
| CN100449449C (en) * | 2006-02-15 | 2009-01-07 | 启攀微电子（上海）有限公司 | Circuit for enhancing driving capability of low voltage-difference linear voltage manostat |
| CN104049663A (en) * | 2013-03-15 | 2014-09-17 | 慧荣科技股份有限公司 | Charge injection type switched capacitor voltage stabilizer applied to high load current |
| CN106873695A (en) * | 2013-03-15 | 2017-06-20 | 慧荣科技股份有限公司 | Charge injection type switched capacitor voltage stabilizer applied to high load current |
| US9859792B2 (en) | 2013-03-15 | 2018-01-02 | Silicon Motion Inc. | Switching-capacitor regulator with charge injection mode for high loading current |
| CN105700610A (en) * | 2016-01-29 | 2016-06-22 | 上海华虹宏力半导体制造有限公司 | Ldo circuit |
| CN106526273A (en) * | 2016-10-24 | 2017-03-22 | 上海华力微电子有限公司 | Precise bleeder circuit for negative voltage measurement |
| CN106526273B (en) * | 2016-10-24 | 2019-10-25 | 上海华力微电子有限公司 | A kind of accurate bleeder circuit for negative voltage measurement |
| WO2021057450A1 (en) * | 2019-09-25 | 2021-04-01 | 圣邦微电子（北京）股份有限公司 | Switching converter and low voltage startup circuit thereof |
| US11929667B2 (en) | 2019-09-25 | 2024-03-12 | Sg Micro Corp | Switching converter and low-voltage startup circuit thereof |
| WO2024078180A1 (en) * | 2022-10-12 | 2024-04-18 | 圣邦微电子(苏州)有限责任公司 | Charge pump circuit |
| CN116225135A (en) * | 2023-05-11 | 2023-06-06 | 上海海栎创科技股份有限公司 | Low-dropout linear voltage regulator |
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