CN1312479A - Structure and manufacture of total-reflection mirrior bent waveguide device - Google Patents
Structure and manufacture of total-reflection mirrior bent waveguide device Download PDFInfo
- Publication number
- CN1312479A CN1312479A CN 01105879 CN01105879A CN1312479A CN 1312479 A CN1312479 A CN 1312479A CN 01105879 CN01105879 CN 01105879 CN 01105879 A CN01105879 A CN 01105879A CN 1312479 A CN1312479 A CN 1312479A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- silicon
- reflection
- insulation course
- mirrior
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The present invention is characterized by that it uses the silicone on the insulating layer as base material, utilizes the anisotropic corrosive characteristics of silicone, and adopts the micromachining processes of oxidation, photoetching and corrosion to prepare fully-reflecting mirror which possesses accurate position, high mirror surface smoothness and is absolutely perpendicular to waveguide plane, and forms a curved waveguide with large angle, small size and low loss together with monomode ridge waveguide made of insulating layer silicone material. Said structure can be used in passive optical device (such as optical coupler and array waveguide grating, etc.) to implement batch production of optical communication devices with compact structure, high integrated level, good performance and simple production process.
Description
The present invention relates to a kind of total-reflection mirrior bent waveguide device architecture and method for making, a kind of more precisely anisotropic etch of silicon that utilizes is made total-reflection mirrior bent waveguide device architecture and method for making on the silicon materials on the insulation course.Belong to the microelectron-mechanical field.
Information age requires increasing network transmission capacity, in the optical fiber telecommunications system that close wavelength-division multiplex technology is widely used in maybe will building at present.And as one of composition network element of dense wavelength division multiplexing system, particularly important role is being played the part of in the development of optic communication device.The integrated type optical waveguide device is the planar waveguide-type device based on the light integrated technology, by processing technologys such as oxidation, photoetching, etchings, it is little that the device of making has a volume, the precision height, be convenient to advantages such as large batch of integrated production, very big potential application is arranged in Access Network from now on, and it has become the emphasis of present research and development.
Curved waveguide is the necessary part of coupling between optical fiber and optoelectronic device and integrated optical device, and because the compactedness of device size requires to realize turning to also to make and significantly being bent to necessity of light wave in short distance, small size scope.
The method that realizes waveguide bend at present mainly contains three classes: directly turn to type, arc to turn to type and direct reflection type.Directly turn to the increase of type curved waveguide along with angle of bend, the loss meeting of light field is owing to the mismatch of the light wave pattern before and after crooked becomes greatly, and its angle of bend is less than 1 degree usually, because the loss that mode mismatch causes just can be ignored; And there is limitation also can realize the short distance macrobending owing to being limited in of transition loss and bending loss the time in arc waveguide; Direct reflection type curved waveguide is made minute surface by the position in necessity, by the total reflection characteristic or the strong reflection characteristic of minute surface place light, changes direction of beam propagation, realizes the bending of waveguide, and it has the wide-angle of realization and undersized potentiality, so have development prospect very much.At present direct reflection type curved waveguide exists mainly that specular surface is coarse, perpendicularity is bad, and mirror position is difficult to problems such as accurately control.Make the fully-reflected type curved waveguide with the silicon materials on the insulation course, utilize the characteristic of silicon in anisotropic etchant, can address the above problem well.
The object of the present invention is to provide a kind of anisotropic etch that utilizes on the silicon materials on the insulation course, to make total-reflection mirrior bent waveguide device architecture and method for making.The objective of the invention is to implement by following manner.
With the silicon on the insulation course is sill, utilize the anisotropic etch characteristic of silicon, by simple micromachining technology such as oxidation, photoetching, corrosion, produce the position accurately, the minute surface flatness is high and with the absolute vertical completely reflecting mirror of planar waveguide, and and constitute wide-angle, small size, the low curved waveguide of loss together with the single mode ridge waveguide that the silicon materials on the insulation course are produced.With this structure applications in Passive Optical Components (as photo-coupler, array waveguide grating or the like) with implementation structure compactness, integrated level height, performance is good, technology is simple, the optic communication device that can produce in batches.
The concrete processing step of device is as follows:
1. the long one deck photo etched mask in the silicon materials device layer on insulation course surface.
2. make the waveguide figure by lithography.
3. erode away the waveguide figure, corrosion depth is controlled at and satisfies the waveguide single mode condition.
4. the silicon materials surface heat oxidation layer of silicon dioxide on the insulation course.
5. make the mirror figure by lithography.
6. carry out wet etching in anisotropic etchant, etching time is controlled at and insulate till once silicon materials upper strata silicon once corroded, and forms minute surface at the waveguide turning.
7. remove silicon dioxide.
The superiority of method for making provided by the invention is conspicuous, specifically:
1. utilize silicon-air interface as the total reflection minute surface, can make the bending loss of waveguide reduce to zero theoretically.
2. in short distance, realized the bending (angle of input beam and output beam is respectively 71 ° and 90 ° in the silicon materials on the insulation course in (110) and (100) crystal orientation) of wide-angle, improved the integrated level of device, very big application potential has been arranged.
3. in the making that is applied to array waveguide grating, not only reduced the size of waveguide optical grating, and than realizing that with the arc-shaped bend of different radii the method for optical path difference more is simple and easy to calculate the degree of accuracy height usually.
4. technology is simple, and cost is low, and the precision height of making is convenient to produce in enormous quantities.
Set forth the inventive features and the marked improvement of method provided by the invention below by drawings and Examples.But the present invention only limits to embodiment by no means.
The present invention utilize that the anisotropic etch effect of silicon in some corrosive liquids (as potassium hydroxide solution, tetramethyl ammonium hydroxide solution) form perpendicular to the bright crystal face of silicon face as completely reflecting mirror, realize direct reflection type curved waveguide.
Embodiment 1:(110) makes 1 * 2 on the silicon materials on the insulation course in crystal orientation
NLuminous-power distributor
The concrete processing step of this device is as follows:
1. the silicon materials front evaporation of aluminum on the insulation course.
2. make the waveguide figure by lithography, corrosion aluminium.
3. reactive ion etching silicon, etching depth control 1-4 μ m is satisfying ripple foot single mode condition.
4. remove aluminium.
5. the silicon materials surface heat oxidation layer of silicon dioxide on the insulation course.
6. make the mirror figure by lithography, corrode silicon dioxide.
7. carry out wet etching in the anisotropic etchant, form minute surface at the waveguide turning.
8. remove silicon dioxide.
Embodiment 2:(100) makes 1 * 2 on the silicon materials on the insulation course in crystal orientation
NLuminous-power distributor
The concrete processing step of this device is as follows:
1. the silicon materials surface heat oxidation layer of silicon dioxide on the insulation course.
2. make the waveguide figure by lithography, corrode silicon dioxide.
3. anisotropic etch, corrosion depth control 1-4 μ m is satisfying the waveguide single mode condition.
4. remove silicon dioxide.
5. the silicon materials surface heat oxidation layer of silicon dioxide on the insulation course.
6. make the mirror figure by lithography, corrode silicon dioxide.
7. carry out wet etching in the anisotropic etchant, form minute surface at the waveguide turning.
8. remove silicon dioxide.
Embodiment 3: the application in array waveguide grating device
Accompanying drawing 5 is the synoptic diagram with the curved waveguide structure fabrication array waveguide grating of the present invention's proposition.(a) be exemplifying embodiment on the silicon materials on the insulation course in (110) crystal orientation.(b) be exemplifying embodiment on the silicon materials on the insulation course in (100) crystal orientation.
Claims (9)
1. total-reflection mirrior bent waveguide device architecture, it is characterized in that utilizing the anisotropic etch characteristic of silicon produce the position accurately, the minute surface flatness is high and with the absolute vertical total reflection minute surface of planar waveguide, and and constitute curved waveguide together with the single mode ridge waveguide that the silicon materials on the insulation course are produced.
2. by the described total-reflection mirrior bent waveguide device architecture of claim 1, it is characterized in that the described anisotropic etch that utilizes silicon, erode away a hole that sidewall is vertical with material surface on the device layer in (110) crystal orientation, its sidewall is that { the 111} crystal face is as the total reflection minute surface.
3. by the described total-reflection mirrior bent waveguide device architecture of claim 1, it is characterized in that the described anisotropic etch that utilizes silicon, on the silicon materials on the insulation course in (100) crystal orientation, erode away a hole, its sidewall perpendicular to material surface { the 100} crystal face is as the total reflection minute surface.
4. by claim 1 or 2 described total-reflection mirrior bent waveguide device architectures, it is characterized in that the silicon materials on the insulation course in (110) crystal orientation can erode away the micro mirror that intersect on the two sides, input beam directly is divided into two-beam by minute surface and propagates.
5. by claim 1 or 3 described total-reflection mirrior bent waveguide device architectures, it is characterized in that passing through the minute surface total reflection again after silicon materials on the insulation course in (100) crystal orientation are divided into two-beam with incident light with one section minimum camber bending of angle of forking.
6. must ask the method for making of 1 described total-reflection mirrior bent waveguide device architecture by power, it is characterized in that the concrete processing step of device is:
(1) the long one deck photo etched mask in the surface of the silicon materials device layer on the insulation course;
(2) make the waveguide figure by lithography;
(3) erode away the waveguide figure, corrosion depth is controlled at and satisfies the waveguide single mode condition;
(4) the silicon materials surface heat oxidation layer of silicon dioxide on the insulation course;
(5) make the mirror figure by lithography;
(6) carry out wet etching in anisotropic etchant, etching time is controlled at till insulating silicon material layer upper strata silicon layer corrodes, and forms minute surface at the waveguide turning;
(7) remove silicon dioxide.
7. by the method for making of the described total-reflection mirrior bent waveguide device architecture of claim 6, it is characterized in that device layer is that the concrete processing step of making on the silicon materials on the insulation course in (110) crystal orientation is:
(1) the silicon materials front evaporation of aluminum on the insulation course;
(2) carve the waveguide figure, corrosion aluminium;
(3) reactive ion etching silicon, etching depth are controlled at 1～4 μ m;
(4) remove aluminium;
(5) insulating silicon material layer surface heat oxidation layer of silicon dioxide;
(6) make mirror figure, corrode silicon dioxide by lithography;
(7) anisotropic etch forms minute surface at the waveguide turning;
(8) remove silicon dioxide.
8. by the method for making of the described total-reflection mirrior bent waveguide device architecture of claim 6, it is characterized in that device layer is that the concrete processing step of making on the silicon materials on the insulation course in (100) crystal orientation is:
(1) the silicon materials surface heat oxidation layer of silicon dioxide on the insulation course;
(2) make waveguide figure, corrode silicon dioxide by lithography;
(3) anisotropic etch, corrosion depth are controlled at 1～4 μ m;
(4) remove silicon dioxide;
(5) insulating silicon material layer surface heat oxidation layer of silicon dioxide;
(6) make mirror figure, corrode silicon dioxide by lithography;
(7) anisotropic etch forms minute surface at the waveguide turning, etching time is controlled at till insulating silicon material layer upper strata silicon layer corrodes;
(8) remove silicon dioxide.
9. by claim 1 or 2 or 3 described total-reflection mirrior bent waveguide device architectures, it is characterized in that can be applicable to multi-mode interference-type coupling mechanism, star-type coupler, fan-shaped waveguide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB01105879XA CN1142452C (en) | 2001-04-06 | 2001-04-06 | Structure and manufacture of total-reflection mirrior bent waveguide device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB01105879XA CN1142452C (en) | 2001-04-06 | 2001-04-06 | Structure and manufacture of total-reflection mirrior bent waveguide device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1312479A true CN1312479A (en) | 2001-09-12 |
| CN1142452C CN1142452C (en) | 2004-03-17 |
Family
ID=4654943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB01105879XA Expired - Fee Related CN1142452C (en) | 2001-04-06 | 2001-04-06 | Structure and manufacture of total-reflection mirrior bent waveguide device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1142452C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100409054C (en) * | 2003-03-14 | 2008-08-06 | 安华高科技光纤Ip（新加坡）私人有限公司 | Small form factor all-polymer optical device with integrated dual beam path based on total internal reflection optical turn |
| CN100492074C (en) * | 2006-12-01 | 2009-05-27 | 中国科学院半导体研究所 | Isolator silicon back-etching total reflection perpendicular coupling structure and manufacture method |
| CN109375312A (en) * | 2018-12-17 | 2019-02-22 | 聊城大学 | A kind of wide-angle is bent the preparation method of full crystal waveguide structure |
-
2001
- 2001-04-06 CN CNB01105879XA patent/CN1142452C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100409054C (en) * | 2003-03-14 | 2008-08-06 | 安华高科技光纤Ip（新加坡）私人有限公司 | Small form factor all-polymer optical device with integrated dual beam path based on total internal reflection optical turn |
| CN100492074C (en) * | 2006-12-01 | 2009-05-27 | 中国科学院半导体研究所 | Isolator silicon back-etching total reflection perpendicular coupling structure and manufacture method |
| CN109375312A (en) * | 2018-12-17 | 2019-02-22 | 聊城大学 | A kind of wide-angle is bent the preparation method of full crystal waveguide structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1142452C (en) | 2004-03-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5568579A (en) | Waveguide coupling device including tapered waveguide with a particular tapered angle to reduce coupling loss | |
| JP2003107273A (en) | Optical coupler with many mutually self-aligned etching grooves and its manufacturing method | |
| JP2614365B2 (en) | Polarization-independent waveguide optical device | |
| US7221843B2 (en) | Optical waveguide | |
| CN114207489A (en) | Polarization rotator | |
| US5101297A (en) | Method for producing a diffraction grating in optical elements | |
| CN112346175A (en) | 3dB light wave power beam splitter | |
| CN103676001A (en) | Three-dimensional glass optical waveguide preparation method | |
| CN1142452C (en) | Structure and manufacture of total-reflection mirrior bent waveguide device | |
| US5473710A (en) | Controlled tapered angle etching process for fabricating optical integrated circuits | |
| JP2000047044A (en) | Optical signal transmission system and its manufacture | |
| Chen et al. | Vertically tapered polymer waveguide mode size transformer for improved fiber coupling | |
| EP0649038A1 (en) | Optical waveguide mirror | |
| CN1402034A (en) | Using (110) silicon wafer to manufacture micromechanical photoswitch, array of photoswitch and method | |
| Glebov et al. | Integrated waveguide micro-optic elements for 3D routing in board-level optical interconnects | |
| CN1252501C (en) | Severeness type Mach-Zehnder interference structure and fabricating method thereof | |
| JPH10300956A (en) | Optical branching waveguide and optical waveguide circuit | |
| US5323407A (en) | Integrated optical mirror and its production process | |
| WO2006049324A1 (en) | Waveguide type beam parameter product control optical circuit and optical integrated circuit | |
| JP3032647B2 (en) | Optical waveguide device | |
| KR20030025714A (en) | Micromachined optical switch and method of manufacture thereof | |
| CN1206550C (en) | A method for making perpendicular smooth reflection-type microscope | |
| JP2003207664A (en) | Optical circuit | |
| JPH1114845A (en) | Optical branch waveguide and its manufacture, and optical waveguide circuit | |
| WO2004025343A1 (en) | Optical device and production method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |