CN1302524C - Wet resist removing process after silk etching - Google Patents
Wet resist removing process after silk etching Download PDFInfo
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- CN1302524C CN1302524C CNB02137192XA CN02137192A CN1302524C CN 1302524 C CN1302524 C CN 1302524C CN B02137192X A CNB02137192X A CN B02137192XA CN 02137192 A CN02137192 A CN 02137192A CN 1302524 C CN1302524 C CN 1302524C
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- silk
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- photoresist
- silicon chip
- etching
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Abstract
The present invention belongs to the technical field of a manufacturing technology of a semiconductor integrated circuit, more specially a photoresist removing technology after silk etching. Along with the increasingly reduced size of a device, the influence of the delay of interconnection RC on the starting speed of the device is larger and larger. At present, people utilize copper and a low dielectric material to reduce the delay of the RC interconnection. Silk which is a novel low dielectric material has some problems in the technological integrated process, such as the photoresist removing technology after silk etching. Because the photoresist removing selection ratio of a dry method of the silk and photoresist is low, the present invention adopts the photoresist removing technology of an EKC525 wet method, and the photoresist removing effect is good. The present invention which has the advantages of simple technology, easy operation and cost saving is suitable for a big production line.
Description
Technical field
The invention belongs to the semiconductor integrated circuit manufacturing process technology field, be specifically related to wet method after the Silk etching technology of removing photoresist.
Background technology
Along with the continuous development of IC technology, device size is more and more little, and interconnection RC postpones the influence of device opening speed more and more big, and the influence considerably beyond grid delay brings becomes the focus that people pay close attention to so reduce the RC interconnect delay.IC industry in 1997 begins to replace the big Al of resistivity with the little Cu of resistivity, to reduce interconnection resistance, and be applied to 0.22 μ m and following technology (although Cu is people one of metal of introducing production process of semiconductor of being unwilling, mainly be that to be afraid of that Cu spreads in silicon chip and silica dioxide medium very fast, just in case contamination can cause the device performance instability); On the other hand, (the k value is less than SiO for people's usefulness dielectric materials
2) replace traditional SiO
2, reducing between interconnecting metal/layer capacitance C, and begin to be applied to 0.18 μ m and following technology.People use the SiO that mixes F at the beginning
2---FSG (k～3.5, a kind of modified model SiO
2) be applied to logic and memory device with the manufacturing of 0.18 μ m technology, as CPU and DRAM/SRAM.And when entering 0.13 μ m technology, people need the lower material of k value (k≤3).Two kinds of methods that prepare dielectric materials are arranged at present---CVD and spin-coating method (Spin on), and all be applied to production line.CVD equipment vendors advocate the dielectric materials of making of the CVD method, as Applied Materials company and Novellus company and the SiOC product of having developed; Material preparation manufacturer then advocates with spin-coating method and prepares dielectric materials, is exactly the product of Dow Chemical company research and development as Silk, its related characteristics (from Dow chemical) as shown in the table.If Silk and Cu are applied in the post-channel interconnection technology, the performance of device is than Al/SiO
2Improve 37%.
Following table is the physics and the electrology characteristic (from Dow Chemical) of relevant Silk material
| Dielectric constant k | 2.62 |
| Leakage current | 3.3×10 -10A/cm 2@1MV/cm |
| Puncture voltage | 4MV/cm |
| Glass transformation temperature Tg | ＞450℃ |
| Thermal stability | ＞425℃ |
| Modulus of elasticity (modulus) | 2.7Gpa |
| Toughness (toughness) | 0.62MPa m 1/2 |
| Stress | 45MPa |
| Wettability | 0.25％@80％RH，25℃ |
| Thermal conductivity | 0.18W/mK |
The Silk dielectric materials is the new spin-on material by the research and development of U.S. Dow Corning company, yet in copper list/dual damascene process is integrated, there are many problems to need to solve, variation as Silk k value, the selection of hard mask, the selection of etching stop layer is with the adhesiveness of copper barrier layer, to the degree of restraining oneself of CMP technology, the selection of etching gas, the cleaning of the technology of removing photoresist after the etching and through hole etc.With SiO
2Dry method (mainly the using the oxygen plasma firing method) difference of removing photoresist, because of low dielectric Silk (k=2.7) is a resin material, and the etching selection ratio between the photoresist is too low, so can not remove photoresist with dry method.If with common dry method (oxygen plasma) technology of removing photoresist, selection of them causes Silk to be removed simultaneously than very poor, it is big that the size of through hole becomes, alteration of form, and the change of k value is big etc., thereby has exceeded technological specification.Therefore the problem of removing photoresist of Silk material is a brand-new technology problem, at present all in positive exploration.
Summary of the invention
The objective of the invention is to propose a kind of new wet method Silk technology of removing photoresist, can select ratio Silk to be removed simultaneously in the reasonable solution Silk technology, it is big that the size of through hole becomes, alteration of form, and k value becomes the problem that is produced in big etc. the removing photoresist.
The wet method Silk that the present invention the proposes technology of removing photoresist is earlier the Silk silicon chip after the etching to be put into the wet method degumming equipment.Clean to remove photoresist with the EKC525 chemical reagent, the Silk silicon chip that will remove photoresist is again put into stove and is done k value recovery curing.EKC525 is a kind of standard clean, U.S. EKC company product.
In the technology of the present invention, the Controllable Temperature of removing photoresist is built in 45-55 ℃, and cleaning can be adopted spraying method, and EKC525 sprays to silicon chip surface with chemical reagent, and the silicon chip rotating speed is 360-440 rev/min; Flushing liquid in Silk removes photoresist process can adopt deionized water, and the nozzle stem oxidizing gases is adopted as N
2The curing temperature that above-mentioned k value is recovered to solidify is 360-440 ℃, time 24-36 minute.
Here we adopt the EKC525 wet method technology of removing photoresist, and the photoresist after the Silk etching is removed, and after the EKC525 wet method is removed photoresist, Silk is carried out k value recover curing (Cure), promptly return to k=2.7 from k＞4.
The wet method of the present invention technology of removing photoresist has improved the selection ratio between Silk and the photoresist, and the k value of Silk is constant substantially, and the thickness of Silk is also constant, and the shape and size of through hole and connecting hole all meet technological specification; Overcome dry method (oxygen plasma) drawback that technology brings of removing photoresist: promptly Silk is removed simultaneously, and it is big that the size of through hole becomes, alteration of form, and k value becomes greatly, and connecting hole has exceeded technological specification etc.The technology of the present invention effect is obvious and technology is simple, and cost is saved in operation easily, is applicable to very much big production line.
Embodiment
Be example with the single Damascus of Cu etching below, further specify the present invention.
1. with the Silk silicon chip after the etching (as single Damascus heap layer be: 50nm SiC/500nm Silk/50nmSiC/150nm SiO
2) put into cleaning equipment (as Semitool Solvent Spray equipment);
2. remove photoresist with the EKC525 chemical reagent, its major parameter is as follows:
| Removing photoresist agent parameter | Relevant cleaning parameters | ||
| Remove gelatinizing agent | EKC525 | Nozzle dries up gas | N 2 |
| Go the gelatinizing agent temperature | 50℃ | The silicon chip flushing liquid | Deionized water |
| Cleaning way | Spraying | ||
| The silicon chip rotating speed | 50 rev/mins | ||
3. the Silk silicon chip after will removing photoresist is at last put into stove and is done k value recovery curing: temperature--and-400 ℃; Time---30 minutes.
Measure by experiment and observe, the k value of Silk is constant substantially, and the thickness of Silk is also constant, and the shape and size of through hole and connecting hole do not have big change, all meet technological specification, have obtained good effect.
Claims (2)
1, a kind of wet method Silk technology of removing photoresist, it is characterized in that: earlier the Silk silicon chip after the etching is put into the wet method degumming equipment, clean the removal photoresist with the EKC525 chemical reagent, the temperature of removing photoresist is controlled at 45-55 ℃, cleaning way is for spraying EKC525 to silicon chip surface, and the silicon chip rotating speed is 360-440 rev/min; The Silk silicon chip that to remove photoresist is again put into stove and is made dielectric constant k value and recover to solidify, and curing temperature is 360-440 ℃, time 24-36 minute.
2, the technology of removing photoresist according to claim 1 is characterized in that: the flushing liquid in Silk removes photoresist process adopts deionized water, and the nozzle stem oxidizing gases adopts N
2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB02137192XA CN1302524C (en) | 2002-09-27 | 2002-09-27 | Wet resist removing process after silk etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB02137192XA CN1302524C (en) | 2002-09-27 | 2002-09-27 | Wet resist removing process after silk etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1420531A CN1420531A (en) | 2003-05-28 |
| CN1302524C true CN1302524C (en) | 2007-02-28 |
Family
ID=4748910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB02137192XA Expired - Fee Related CN1302524C (en) | 2002-09-27 | 2002-09-27 | Wet resist removing process after silk etching |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1302524C (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1236978A (en) * | 1998-05-26 | 1999-12-01 | 世大积体电路股份有限公司 | Method for forming flat intermetal dielectric layer |
| CN1257610A (en) * | 1997-03-24 | 2000-06-21 | 联合讯号公司 | Integration of low-K polymers into interlevel dielectrics using controlled electron-beam radiation |
-
2002
- 2002-09-27 CN CNB02137192XA patent/CN1302524C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1257610A (en) * | 1997-03-24 | 2000-06-21 | 联合讯号公司 | Integration of low-K polymers into interlevel dielectrics using controlled electron-beam radiation |
| US6080526A (en) * | 1997-03-24 | 2000-06-27 | Alliedsignal Inc. | Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation |
| CN1236978A (en) * | 1998-05-26 | 1999-12-01 | 世大积体电路股份有限公司 | Method for forming flat intermetal dielectric layer |
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| Publication number | Publication date |
|---|---|
| CN1420531A (en) | 2003-05-28 |
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Owner name: SHANGHAI HUAHONG (GROUP) CO., LTD.; APPLICANT Free format text: FORMER OWNER: SHANGHAI HUAHONG (GROUP) CO., LTD. Effective date: 20060901 |
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Effective date of registration: 20060901 Address after: 201203 No. 177 blue wave road, Zhangjiang hi tech park, Shanghai, Pudong New Area Applicant after: Shanghai Huahong (Group) Co., Ltd. Co-applicant after: Shanghai integrated circuit research and Development Center Co., Ltd. Address before: 18, Huaihai Road, Shanghai, No. 200020, building 918 Applicant before: Shanghai Huahong (Group) Co., Ltd. |
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