CN1300818C - Field-emitting needle tip, and its preparing method and use - Google Patents
Field-emitting needle tip, and its preparing method and use Download PDFInfo
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- CN1300818C CN1300818C CNB031497845A CN03149784A CN1300818C CN 1300818 C CN1300818 C CN 1300818C CN B031497845 A CNB031497845 A CN B031497845A CN 03149784 A CN03149784 A CN 03149784A CN 1300818 C CN1300818 C CN 1300818C
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Abstract
The present invention discloses a field emitting needle tip, a preparing method and use thereof. The field emitting needle tip provided by the present invention is a nano crystal of indium oxide or tin indium oxide, wherein the nano crystal is fixed on a silicon substrate; the tip has the magnitude order of 10<-1> to 10<0>nm. The present invention also provides the preparation method of the field emitting needle tip. The field emitting needle tip of the present invention can be used for preparing flat plate displays or Spindt type cold cathodes.
Description
Technical field
The present invention relates to a kind of emission needle point and preparation method thereof and application.
Background technology
Field emission (Field Emission) has great commercial value in flat panel display (Flat Panel Display) and vacuum microelectronic device (Vacuum Microelectronic is as x ray generator, microwave generator etc.) application facet.Aspect flat-panel monitor, being the flat-panel monitor of cold cathode based on field emmision material compares with commercial plasma flat-panel display (PDP) at present with traditional liquid crystal (LCD) display, has that energy consumption is low, brightness is big, high frame switch speed, full visual angle, is easy to the characteristics of size microminaturization.Therefore, Field Emission Display (FED) is considered to the flat-panel monitor of future generation of tool prospect.Tradition field emission cold-cathode material mainly concentrates on some refractory metals (molybdenum), in the research of semiconductor (silicon) and insulator (diamond).In recent years, the research about carbon nano-tube (CNTs) becomes new focus.At present, CNTs is thought a kind of field emmision material efficiently in the world.It is the color flat panel display (FED) of cold cathode that Korea S Samsung has developed with orientation CNTs.But be based on the cold cathode of carbon pipe, because graphite linings is when emitting electrons, chemical stability and anti-sputter ability are relatively poor, so be difficult to reach the desired working life of commercialization.Conductive oxide (n type doped indium oxide (In
2O
3, indium oxide), tin oxide, molybdenum oxide, chromium oxide etc.) because of it has good chemical stability and anti-sputter characteristic, be another kind of desirable field emmision material; Especially has the incomparable advantage of carbon pipe aspect the raising emission lifetime.Conductive oxide needle point structure technology of preparing is an international headache always, is not well solved.
Summary of the invention
The purpose of this invention is to provide a kind of emission needle point.
Provided by the present invention emission needle point is that the tip that is fixed on the silicon substrate is 10
-1-10
0The indium oxide of nm or tin indium oxide nanocrystal.
This nanocrystal is 4 subsymmetric taper pyramid patterns, and the pyramid main shaft is perpendicular to silicon substrate, and 4 triangular sides of described nanocrystal are (222) face of indium oxide or tin indium oxide, and the bottom surface is (400) face.Described silicon substrate can be n type silicon substrate, is preferably the n type silicon substrate that height is mixed.Wherein, the molecular formula of indium oxide (indium oxide) is In
2O
3, the crystalline phase of indium oxide nanocrystalline body is a cube phase (cubic), and crystal grain is random distribution on substrate, and average distance is about 1 micron.
Utilize ripe tin dope technology,, can obtain the tin indium oxide of good n type conductivity the indium-doped tin oxide element, by what of controlled doping tin element, the conductivity that can regulate tin indium oxide.
Second purpose of the present invention provides a kind of method for preparing nano indium oxide or tin indium oxide field emission needle point.
Preparation method provided by the present invention, the method for employing chemical vapor deposition (CVD) may further comprise the steps:
1) utilize method evaporation thickness on silicon substrate of electron beam evaporation or magnetron sputtering to be the metallic nickel catalyst of 1-5 nanometer;
2) adopting the mixture of indium metal and indium oxide is growth source, obtains nano indium oxide or tin indium oxide field emission needle point.
In the described step 1), silicon substrate can be n type silicon substrate, is preferably the n type silicon substrate that height is mixed.After evaporation thickness was the metallic nickel catalyst of 4-6 nanometer on the silicon substrate in described step 1), adopting the mixture of high pure metal indium and indium oxide was evaporation source, and it is vertical orientated that substrate and evaporation source adopt, and distance is controlled at 4-6mm; After vacuumizing gas washing, be under the Ar protection of 190-210sccm at flow, with the heating rate of 18-22 ℃/min, the temperature of reaction chamber is risen to 940-960 ℃, and be evacuated to 38-42Torr; The feeding flow is that the methane gas of 18-22sccm reacted 8-12 minute, obtains nano indium oxide or tin indium oxide field emission needle point.Wherein, the metallic nickel catalyst thickness of institute's evaporation is preferably 5 nanometers; Distance between substrate and the evaporation source is 5mm; After vacuumizing gas washing, be under the Ar protection of 200sccm at flow, with the heating rate of 20 ℃/min, the temperature of reaction chamber is risen to 950-1050 ℃, and be evacuated to 40Torr; The feeding flow is that the methane gas of 20sccm reacted 10 minutes.
The present invention utilizes chemical gaseous phase depositing process successfully to prepare vertical orientated pyramid nano indium oxide (tin indium oxide) emission needle point on the silicon substrate that the n type mixes.Because indium oxide has lower electron affinity (electron affinity), intrinsic n doping characteristic, good chemical stability and anti-sputter ability, and has vertical orientation, therefore be desirable field emission needle point.Because the growth of pyramid nano indium oxide (tin indium oxide) emission needle point has the selectivity of metallic nickel and the characteristics that combine with silicon substrate, therefore, if being combined meeting, the present invention and traditional Si semiconductor technology and ripe photoetching technique Spindt type cold cathode is made become simple.Because this material of indium oxide has good chemical stability and anti-sputter ability, therefore, can have very high field emission stability and life-span based on pyramid nano indium oxide (tin indium oxide) flat-panel monitor that the emission needle point is made.
Description of drawings
Fig. 1 is the stereoscan photograph of pyramid nano indium oxide field emission needle point
Fig. 2 is the field emission electric field strength and the current density relation curve of pyramid nano indium oxide field emission pinpoint array
Fig. 3 is the field emission electric field strength and the current density F-N matched curve of pyramid nano indium oxide field emission pinpoint array
Embodiment
The preparation method of embodiment 1, nano indium oxide field emission needle point
The method that adopts chemical vapor deposition (CVD) for preparing of needle point is launched in the nano indium oxide field.At first utilize electron beam evaporation method, evaporation thickness is the metallic nickel catalyst of 5 nanometers on the n type silicon substrate that height is mixed.Adopting the mixture of high pure metal indium and indium oxide is evaporation source, and the mol ratio of indium metal and indium oxide is 1: 1.It is vertical orientated that substrate and evaporation source adopt, and distance is controlled at about 5mm.After vacuumizing gas washing, be under the Ar protection of 200sccm at flow, with the heating rate of 20 ℃/min, the temperature of reaction chamber is risen to 950 ℃, and be evacuated to 40Torr.The feeding flow is that the methane gas of 20sccm reacted 10 minutes, naturally cools to room temperature under the Ar gas shiled, takes out sample, obtains nano indium oxide field emission needle point.
Embodiment 2, nano indium oxide field emission needle point and field emission characteristic thereof
As shown in Figure 1, this emission needle point is 4 subsymmetric taper pyramid patterns, and the pyramid main shaft is perpendicular to silicon substrate, and 4 triangular sides of an emission needle point are (222) face of indium oxide or tin indium oxide, and the bottom surface is (400) face.Field emission needle point is of a size of 10
-1-10
0The nm magnitude is random distribution the end of on, average distance is 1 μ m.This emission needle point presents stable, efficiently an emission effciency.As Fig. 2, shown in Figure 3, show that corresponding to current density be 0.1 μ A/cm
2Unlatching extra electric field intensity be 2.7V/ μ m, be 1mA/cm corresponding to current density
2Threshold field intensity be 6.0V/ μ m, among the figure, (1) expression average-size be the current density-electric field strength curve of the indium oxide crystal grain of 180nm, (2) expression average-size be the current density-electric field strength curve of 1-5 μ m indium oxide crystal grain.Therefore, the field emission effciency of this emission needle point has been enough to satisfy the requirement of flat panel display.
Claims (9)
1, a kind of emission needle point is that the tip that is fixed on the silicon substrate is 10
-1-10
0The indium oxide of nm or tin indium oxide nanocrystal, wherein, described nanocrystal is 4 subsymmetric taper pyramid patterns, the pyramid main shaft is perpendicular to silicon substrate.
2, according to claim 1 emission needle point, it is characterized in that: 4 triangular sides of described nanocrystal are (222) face of indium oxide or tin indium oxide, and the bottom surface is (400) face.
3, according to claim 1 and 2 emission needle point, it is characterized in that: described silicon substrate is a n type silicon substrate.
4, according to claim 3 emission needle point is characterized in that: described silicon substrate is the high n type silicon substrate of mixing.
5, a kind of method for preparing described emission of claim 1 needle point may further comprise the steps:
1) utilize method evaporation thickness on silicon substrate of electron beam evaporation or magnetron sputtering to be the metallic nickel catalyst of 1-5 nanometer;
2) adopting the mixture of indium metal and indium oxide is growth source, and substrate and evaporation source adopt vertical orientated, and distance is controlled at 4-6mm; After vacuumizing gas washing, be under the Ar protection of 190-210sccm at flow, with the heating rate of 18-22 ℃/min, the temperature of reaction chamber is risen to 940-960 ℃, and be evacuated to 38-42Torr; The feeding flow is that the methane gas of 18-22sccm reacted 8-12 minute, obtains nano indium oxide or tin indium oxide field emission needle point.
6, method according to claim 5 is characterized in that: in the described step 1), silicon substrate is a n type silicon substrate.
7, method according to claim 6 is characterized in that: described silicon substrate is the high n type silicon substrate of mixing.
8, according to claim 5 or 6 or 7 described methods, it is characterized in that: the metallic nickel catalyst thickness of described evaporation is 5 nanometers; Distance between described substrate and the evaporation source is 5mm.
9, the application of described emission of claim 1-4 needle point in preparation flat-panel monitor or Spindt type cold cathode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031497845A CN1300818C (en) | 2003-08-06 | 2003-08-06 | Field-emitting needle tip, and its preparing method and use |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031497845A CN1300818C (en) | 2003-08-06 | 2003-08-06 | Field-emitting needle tip, and its preparing method and use |
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|---|---|
| CN1581399A CN1581399A (en) | 2005-02-16 |
| CN1300818C true CN1300818C (en) | 2007-02-14 |
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| CNB031497845A Expired - Fee Related CN1300818C (en) | 2003-08-06 | 2003-08-06 | Field-emitting needle tip, and its preparing method and use |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1417032A (en) * | 1972-02-11 | 1975-12-10 | Westinghouse Electric Corp | Cold cathode field electron emitting devices |
| JPH08255555A (en) * | 1995-03-16 | 1996-10-01 | Fujitsu Ltd | Needle type electrode and manufacture thereof |
| US5635790A (en) * | 1994-04-25 | 1997-06-03 | Commissariat A L'energie Atomique | Process for the production of a microtip electron source and microtip electron source obtained by this process |
| JPH11213864A (en) * | 1998-01-20 | 1999-08-06 | Toshiba Corp | Field emission type cold cathode and manufacture thereof |
| JPH11317153A (en) * | 1998-05-01 | 1999-11-16 | Ulvac Corp | Manufacture of electron emission source |
| US20010008363A1 (en) * | 1998-08-31 | 2001-07-19 | Sanghera Jasbinder S. | Coated cathodoluminescent phosphors II |
| CN1360731A (en) * | 1999-07-05 | 2002-07-24 | 可印刷发射体有限公司 | Method for creating field electron emission material and field electron emitter comprising said material |
-
2003
- 2003-08-06 CN CNB031497845A patent/CN1300818C/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1417032A (en) * | 1972-02-11 | 1975-12-10 | Westinghouse Electric Corp | Cold cathode field electron emitting devices |
| US5635790A (en) * | 1994-04-25 | 1997-06-03 | Commissariat A L'energie Atomique | Process for the production of a microtip electron source and microtip electron source obtained by this process |
| JPH08255555A (en) * | 1995-03-16 | 1996-10-01 | Fujitsu Ltd | Needle type electrode and manufacture thereof |
| JPH11213864A (en) * | 1998-01-20 | 1999-08-06 | Toshiba Corp | Field emission type cold cathode and manufacture thereof |
| JPH11317153A (en) * | 1998-05-01 | 1999-11-16 | Ulvac Corp | Manufacture of electron emission source |
| US20010008363A1 (en) * | 1998-08-31 | 2001-07-19 | Sanghera Jasbinder S. | Coated cathodoluminescent phosphors II |
| CN1360731A (en) * | 1999-07-05 | 2002-07-24 | 可印刷发射体有限公司 | Method for creating field electron emission material and field electron emitter comprising said material |
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| Publication number | Publication date |
|---|---|
| CN1581399A (en) | 2005-02-16 |
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