CN1299324C - A method for repairing film electric crystal circuit on display panel - Google Patents
A method for repairing film electric crystal circuit on display panel Download PDFInfo
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- CN1299324C CN1299324C CNB031465714A CN03146571A CN1299324C CN 1299324 C CN1299324 C CN 1299324C CN B031465714 A CNB031465714 A CN B031465714A CN 03146571 A CN03146571 A CN 03146571A CN 1299324 C CN1299324 C CN 1299324C
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- circuit
- membrane transistor
- electric crystal
- repairing
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Abstract
The present invention relates to a method for repairing a film electric crystal circuit on a display panel, which mainly comprises the following steps: firstly, a shading cover is arranged above the display panel, and the shading cover has an opening which is just corresponding to the broken position of the circuit on the display panel. Subsequently, an electric plasma spattering-plating procedure is performed so as to deposit a metal film on the display panel by the opening on the shading cover, and thus, the broken circuit can switch into conduction. When the metal film is covered on a plurality of circuits, a laser excision procedure is performed, and thus, the metal film on the circuits is cut so as to prevent the short circuit among the different circuits.
Description
Technical field
The invention relates to a kind of repairing display pannel upper film electric crystal lines method of patterning, particularly use the method that the partial thin film deposition technique is repaired the membrane transistor on the display pannel (TFT) circuit about a kind of.
Background of invention
Along with the step of production of integrated circuits rapid technological improvement, development and progress that electronics technology continues impel electronic product miscellaneous all to develop towards " digitlization ".In addition, in order to meet considering of portability and practicality, at electronic product in design, all tend to compact, function is many, processing speed is used as design specification soon, so that the product of making can carry easilier, and more meets modern life requirement.Particularly after the electronic multimedia product is propagated its belief on a large scale, clip its powerful operation capacity, can handle digital materials such as various audios, image, pattern easily, the related image playback equipment that makes is subjected to developing widely and utilization.No matter be personal digital assistant device, notebook computer, walkman, digital camera or mobile phone or the like, all can install display screens and browse information or image to make things convenient for the consumer.
On the other hand, because the making thin-film electronic crystal technology is progressive fast, make the performance such as LCD (LCD), organic electro-luminescent display flat-panel screens such as (OLED) continue to promote, and can be a large amount of be applied to personal digital aid (PDA) (PDA), notebook computer, digital camera, take the photograph in the various electronic products such as video recorder, mobile phone.Add the positive input research and development of industry and adopt the production equipment that maximizes, the quality of flat-panel screens is constantly promoted, and the lasting decline of price, more make its application enlarge rapidly.
Generally speaking, in the manufacturing process of display pannel, tend to by processing procedures such as film deposition and lithographies, on glass substrate, make a large amount of membrane transistor (TFT), pixel electrode (pixelelectrode) and crisscross each other scan line and data line pattern, and construct required pel array (pixel array).And, for required operating voltage and the signal of membrane transistor in each pixel element is provided, on glass substrate and can make relevant line pattern, stretch out by pel array, so as be positioned at wafer, element around the glass substrate and produce and link.Thus, be made in the sequencing control wafer (timing controller) and source drive wafer (source driverIC) 16 of glass substrate outer rim, just can see through the line pattern on the panel, transmit document signal to each pixel element.And, being made in the gate drive wafer (gate driver IC) of glass substrate side, also can will scan signal and be sent to each pixel element via these line patterns.
It should be noted that; in the processing procedure of whole display pannel; because glass substrate need back and forth transmit with the processing procedure of being correlated with between different boards, so in the process of carrying, bump, rub, and cause circuit on the glass substrate by scratch through regular meeting.Particularly impaired when too serious when circuit, just can cause and open circuit, and required electrically connect function can't effectively be provided.See also Figure 1A, this figure demonstrates the circuit 10 on the panel, produces and scrapes disconnected 101 situation to such an extent as to be subjected to improper external force; As in Figure 1B, then demonstrating circuit 10 on the panel because other undesirable element (for example glass substrate breakage), the glass conchoidal fracture 102 that is caused.
With the production status of present display pannel, when meeting with too serious circuit scratch, tend to this piece glass substrate is directly scrapped.But thus, tend to make cost allowance quite serious.In order effectively to reduce cost allowance, this case is the method that proposes a kind of repairing circuit, effectively remedying the membrane transistor circuit that has ruptured, or remedies the rupture of line that causes because glass surface breaks.
Summary of the invention
Purpose of the present invention is providing a kind of method of repairing the fracture of display pannel upper film electric crystal lines.
A kind of method of repairing display pannel upper film electric crystal lines comprises the following step at least:
One shade is placed in this display floater top, on this shade, has an opening, just in time corresponding to the position of rupture of line on this display floater; And
Carry out the plasma sputtering program,, deposit a metallic film on this display floater, so that this circuit of conducting fracture to see through this opening of this shade.
This opening of described shade can expose a plurality of membrane transistor circuits on this display floater simultaneously, and makes this deposit metal films on those membrane transistor circuits.
The method of described repairing display pannel upper film electric crystal lines, behind this metallic film of deposition, also comprise and carry out a laser ablation program, so that this metallic film on these a plurality of membrane transistor circuits is cut, to prevent producing short circuit between this different membrane transistor circuits.
Described membrane transistor circuit is formed by the first metal layer and second metal layer stack that deposit in regular turn, and the material of this first metal layer and this second metal level can be selected chromium, tungsten, tantalum, titanium, molybdenum, platinum, aluminium or its combination in any.
Described this metallic film that is deposited on the display floater is made of aluminum metal, and can be filled in the fracture breach of this first metal layer and this second metal level.
A kind of method of repairing display pannel upper film electric crystal lines is to repair at display floater upper film electric crystal lines, and this method comprises the following step at least:
Deposit a localized metallic film in this display floater upper surface, to cover the zone of rupture of line on this display floater fully, this localized metallic film is to be covered on a plurality of circuits; And
Carry out the laser ablation program, this localized metallic film on these a plurality of circuits is cut, to prevent producing short circuit between different these circuits.
The method of described repairing display pannel upper film electric crystal lines, the material of wherein said each bar circuit can be selected chromium, tungsten, tantalum, titanium, molybdenum, platinum, aluminium or its combination in any.
Described each bar circuit is formed by the first metal layer and second metal layer stack that deposit in regular turn, and the material of this first metal layer and this second metal level can be selected chromium, tungsten, tantalum, titanium, molybdenum, platinum, aluminium or its combination in any.
Described localized metallic film is made of aluminum metal, and can be filled in the fracture breach of this first metal layer and this second metal level.
A kind of method of repairing display pannel upper film electric crystal lines comprises the following step at least:
Above this display floater, produce the gaseous metal compound; And
Use laser beam irradiation, transmission of power is to this top, membrane transistor rupture of line position, to dissociate this gaseous metal compound and produce metallic particles, those metallic particles can be deposited along the direction of this membrane transistor circuit, and cover and link the fracture breach of this membrane transistor circuit.
Described gaseous metal compound is to be W (CO)
6
Described membrane transistor circuit is formed by the first metal layer and second metal layer stack that deposit in regular turn, and the material of this first metal layer and this second metal level can be selected chromium, tungsten, tantalum, titanium, molybdenum, platinum, aluminium or its combination in any.
Described metallic particles is made of the tungsten metal, and is that deposition is filled in the fracture breach of this first metal layer and this second metal level.
The practice of directly glass plate of rupture of line being scrapped in the known techniques, circuit mending method provided by the present invention can effectively be saved a large amount of manufacturing costs.
Description of drawings
Figure 1A-1B demonstrates the damaged situation that betides display pannel upper film electric crystal lines;
Fig. 2 A-2D demonstrates the step of using the plasma sputtering mode to repair the membrane transistor circuit according to first embodiment of the invention;
Fig. 3 demonstrates the present invention and uses aluminum metal to repair the step of the metal level breach of different materials;
Fig. 4 A-4C demonstrates the step of repairing membrane transistor rupture of line breach according to second embodiment of the invention; And
Fig. 5 A-5B demonstrates the step of directly repairing the membrane transistor circuit according to third embodiment of the invention under the situation of not using shade.
The figure number explanation
Scrape disconnected 101 glass conchoidal fractures 102
The first metal layer 201 second metal levels 202
Shade 22 openings 220
Plasma sputtering program 23 metallic films 24
Metal ion 25
Localized metallic film 42
Display pannel 5
50 fractures 500 of membrane transistor circuit
Gaseous metal compound 52 laser 54
Metallic film 56
Embodiment
The present invention discloses a kind of method of repairing display pannel upper film electric crystal lines, is to repair at display floater upper film electric crystal lines.This method for repairing and mending mainly comprises the following steps.At first, a shade is placed in display floater top, on shade, has an opening, just in time corresponding to the position of rupture of line on the display floater.Then, carry out the plasma sputtering program,, deposit a metallic film on display floater, with the circuit of conducting fracture to see through the opening on the shade.When metallic film is when being covered on a plurality of circuits, then to carry out the laser ablation program, the metallic film on a plurality of circuits is cut, to prevent producing short circuit between different circuits.
First embodiment
Please refer to Fig. 2 A-2D, this graphic demonstration the present invention partly discloses and is used for the repairing circuit method of patterning.As above-mentioned, the present invention repairs at the membrane transistor rupture of line on the display pannel.Fig. 2 A demonstrates the membrane transistor circuit 20 that is positioned at display pannel 2 upper surfaces, owing to being subjected to the fracture breach 200 that scratch produces.When carrying out Hotfix, earlier this piece display pannel 2 is positioned among the plasma reative cell, put a shade 22 again in display pannel 2 tops, shown in Fig. 2 B.What particularly point out is, has an opening 220 on shade 22, just in time corresponding to the fracture breach 200 of circuit on the display pannel 2.In preferred embodiment, the width of opening 220 can less times greater than or equal the live width of membrane transistor circuit 20, adjusted along stretching situation as for the then visual fracture breach 200 of the length of opening 220, in general, the length of opening 220 can be less times greater than the length of fracture breach 200, so that see through the metal material of opening deposition, can effectively connect the line pattern at breach 200 two ends.
Then, shown in Fig. 2 B, display pannel 2 is carried out plasma sputtering program (as arrow 23), to see through the opening 220 on the shade 22, the metal ion 25 that quickens that is excited is sputtered on the display pannel 2, and deposit a metallic film 24 on the membrane transistor circuit 20 of fracture, so that the circuit of conducting fracture.Please be simultaneously with reference to Fig. 2 D, this figure demonstrates the situation by the being seen plasma sputtering program in the cross section of display pannel 2 (arrow 23), the metal ion 25 that drops and depositing metal films 24.After finishing the sputter program, shown in Fig. 2 C, on the fracture breach 200 of membrane transistor circuit 20, can deposit layer of metal film 24, be used for producing required electrically connect effect.
In general, the material of membrane transistor circuit 20 can select chromium, tungsten, tantalum, titanium, molybdenum, platinum, aluminium or its combination in any to constitute, constituted by aluminum metal as for being used for 24 of the metallic films of repairing circuit, so that by the preferable conductivity of aluminum metal, the membrane transistor circuit 20 that fracture is provided is electrically connect preferably.In other words, no matter the membrane transistor circuit 20 on the display pannel 2 is made of any material, when carrying out Hotfix of the present invention, all can use aluminum metal to deposit required metallic film 24.In addition,, please refer to Fig. 3 for part display pannel 2, its membrane transistor circuit 20 be by the first metal layer 201 and second metal level 202 of deposition in regular turn pile up form, and the material of the first metal layer 201 and second metal level 202 is also inequality.But under this kind situation, also can use above-mentioned plasma sputtering program, directly deposition of aluminum metallic film 24 and is filled in the fracture breach of the first metal layer 201 and second metal level 202 on display pannel 2, and reaches the purpose of circuit mending.
Second embodiment
Except above-mentioned mode of repairing at each bar membrane transistor circuit, also can see through the deposition program of carrying out a metallic film at all rupture of lines in the zone, carry out the action of repairing circuit.Please refer to Fig. 4 A, this figure demonstrates the situation that the membrane transistor circuit 40 that is positioned at display pannel 4 upper surfaces is subjected to scratch.Because it is quite intensive that these membrane transistor circuits 40 are arranged, therefore when suffering external force damaged, its scratch may traverse and extend several membrane transistor circuits 40 arranged side by side.To be example among Fig. 4 A, damaged situation is traversed three membrane transistor circuits that adjoin, and causes the region of fracture 400 among the figure.
Using line pattern method for repairing and mending of the present invention, please refer to Fig. 4 B, deposition one localized metallic film 42 is in display pannel 4 upper surfaces, to cover the region of fracture 400 on the display pannel 4 fully earlier.As shown in FIG., the localized metallic film 42 that is deposited can cover five membrane transistor circuits 40 that adjoin simultaneously, therefore still need and carry out the laser ablation program one, remove the part localized metallic film 42 that is arranged in the line pattern gap, shown in Fig. 4 C, so that the localized metallic film on these membrane transistor circuits 40 42 is cut, each 40 in bar membrane transistor circuit is separated each other, prevent to produce problem of short-circuit between different circuits.
In the preferred embodiment, when carrying out above-mentioned localized metallic film 42 depositions, can use a shade to limit the scope of localized metallic film 42.That is, on this shade, can have a patterns of openings, and the size of this patterns of openings can be greater than the size of the region of fracture 400, so that allow the localized metallic film 42 that is deposited can cover the whole region of fracture 400 fully corresponding to the region of fracture 400.After shade being positioned over above the display pannel 4, can carrying out above-mentioned plasma sputtering program or adopt chemical vapour deposition technique to make required localized metallic film 42.What particularly point out is, when selecting required shade, as long as the patterns of openings on the selected shade is greater than the whole region of fracture 400.In other words, need be at the size of the region of fracture 400, the special shade of making correspondence.
As above-mentioned, the material of membrane transistor circuit 40 can select chromium, tungsten, tantalum, titanium, molybdenum, platinum, aluminium or its combination in any to constitute, and is to be made of aluminum metal as for being used for 42 of the localized metallic films of repairing circuit.And, for part membrane transistor circuit 40, may be to form by the material different the first metal layer and second metal layer stack, nonetheless, still can directly deposit the localized metallic film 42 that constitutes by aluminum, and be filled in the fracture breach of the first metal layer and second metal level, and reach the purpose of circuit mending.
The 3rd embodiment
Except the mode of above-mentioned use shade, when the fracture on the circuit is quite small, also can under the situation of not using shade, directly carry out the deposition of metallic film to the rupture of line position.Please refer to Fig. 5 A, when fracture 500 takes place for the membrane transistor circuit on the display pannel 5 50, display pannel 5 can be positioned over and be used for carrying out in the reative cell of chemical vapour deposition procedure, and feed such as W (CO)
6Gaseous metal compound 52 so that allow in the space of display pannel 5 tops, be full of the gaseous metal compound, shown in Fig. 5 B.Then, transmission of power is to membrane transistor circuit 50 fracture positions 500 tops, to dissociate gaseous metal compound and produce the tungsten metallic particles, make these tungsten metallic particles deposit and to form a metallic film 56, with the fracture breach 500 of covering and binding membrane transistor circuit 50 along the direction of membrane transistor circuit 50.
In preferred embodiment, the step of above-mentioned transmission of power can be used laser beam irradiation or use focused ion beam (FIB; Focus Ion Beam) irradiation is reached.That is through using laser beam or focused ion beam, along the direction of membrane transistor circuit 50, inswept whole section fracture breach 500 just can allow the aluminum metal particle that dissociates, and drops and is attached in the fracture breach 500, and reach the effect of circuit mending.Fig. 5 B demonstrates and uses a laser 54 to dissociate gaseous metal compound 52 to form the situation of required metallic film 56.
As above-mentioned, the material of membrane transistor circuit 50 can select chromium, tungsten, tantalum, titanium, molybdenum, platinum, aluminium or its combination in any to constitute, and is to be made of aluminum metal as for being used for 56 of the localized metallic films of repairing circuit.And, for part membrane transistor circuit 50, although it may be formed by the material different the first metal layer and second metal layer stack, but still can deposit the metallic film 56 that constitutes by aluminum, be filled in the fracture breach 500 of the first metal layer and second metal level, and reach the purpose of circuit mending.
The practice of directly glass plate of rupture of line being scrapped in the known techniques, circuit mending method provided by the present invention can effectively be saved a large amount of manufacturing costs.With the manufactory of 800,000 of outputs every month, carrying out the module assembling during stage, because the fraction defective that the membrane transistor rupture of line causes is greatly about about 0.3-0.4%.If the price of every display pannel is with 500 NT dollars of calculating, then above-mentioned method for repairing and mending obviously can be saved about 1,500,000 New Taiwan Dollar for manufactory at once.
Though the present invention illustrates as above with preferred embodiments, so it is not in order to limit the present invention's spirit and invention entity, only to terminate in the foregoing description that.Be with, the modification of being done in not breaking away from spirit of the present invention and scope all should be included in the following claim.
Claims (5)
1, a kind of method of repairing display pannel upper film electric crystal lines is characterized in that comprising at least the following step:
One shade is placed in this display floater top, on this shade, has an opening, just in time corresponding to the position of rupture of line on this display floater; And
Carry out the plasma sputtering program,, deposit a metallic film on this display floater, so that this circuit of conducting fracture to see through this opening of this shade.
2, the method for repairing display pannel upper film electric crystal lines as claimed in claim 1, it is characterized in that: this opening of above-mentioned shade, can expose a plurality of membrane transistor circuits on this display floater simultaneously, and make this deposit metal films on those membrane transistor circuits.
3, the method for repairing display pannel upper film electric crystal lines as claimed in claim 2, it is characterized in that: behind this metallic film of deposition, also comprise and carry out a laser ablation program, so that this metallic film on these a plurality of membrane transistor circuits is cut, to prevent producing short circuit between this different membrane transistor circuits.
4, the method for repairing display pannel upper film electric crystal lines as claimed in claim 1, it is characterized in that: above-mentioned membrane transistor circuit is formed by the first metal layer and second metal layer stack that deposit in regular turn, and the material of this first metal layer and this second metal level can be selected chromium, tungsten, tantalum, titanium, molybdenum, platinum, aluminium or its combination in any.
5, the method for repairing display pannel upper film electric crystal lines as claimed in claim 4, it is characterized in that: above-mentioned this metallic film that is deposited on the display floater is made of aluminum metal, and can be filled in the fracture breach of this first metal layer and this second metal level.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031465714A CN1299324C (en) | 2003-07-04 | 2003-07-04 | A method for repairing film electric crystal circuit on display panel |
| CNB2006100942107A CN100388460C (en) | 2003-07-04 | 2003-07-04 | Method for repairing thin film transistor wire on display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031465714A CN1299324C (en) | 2003-07-04 | 2003-07-04 | A method for repairing film electric crystal circuit on display panel |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100942107A Division CN100388460C (en) | 2003-07-04 | 2003-07-04 | Method for repairing thin film transistor wire on display panel |
| CN 200610151413 Division CN1913129A (en) | 2003-07-04 | 2003-07-04 | Method for repairing thin film transistor line on display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1567527A CN1567527A (en) | 2005-01-19 |
| CN1299324C true CN1299324C (en) | 2007-02-07 |
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100942107A Expired - Fee Related CN100388460C (en) | 2003-07-04 | 2003-07-04 | Method for repairing thin film transistor wire on display panel |
| CNB031465714A Expired - Fee Related CN1299324C (en) | 2003-07-04 | 2003-07-04 | A method for repairing film electric crystal circuit on display panel |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100942107A Expired - Fee Related CN100388460C (en) | 2003-07-04 | 2003-07-04 | Method for repairing thin film transistor wire on display panel |
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| Country | Link |
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| CN (2) | CN100388460C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100446175C (en) * | 2005-09-26 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Method for focus plasma beam mending with precisivelly positioning |
| CN101681569B (en) * | 2007-06-15 | 2011-06-15 | 夏普株式会社 | Display device, manufacturing method of the display device |
| CN101329610B (en) * | 2008-07-25 | 2011-07-20 | 友达光电股份有限公司 | Touch control type apparatus capable of mending and method for mending touch control type panel |
| CN102759829A (en) * | 2012-07-03 | 2012-10-31 | 深圳市华星光电技术有限公司 | Broken line repairing device and method of array substrate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5429994A (en) * | 1993-07-22 | 1995-07-04 | Mitsubishi Denki Kabushiki Kaisha | Wiring forming method, wiring restoring method and wiring pattern changing method |
| US5518956A (en) * | 1993-09-02 | 1996-05-21 | General Electric Company | Method of isolating vertical shorts in an electronic array using laser ablation |
| CN1142057A (en) * | 1995-05-30 | 1997-02-05 | 株式会社先进展示 | Array base plate, liquid-crystal displaying device of thin-film transistor, and method for production of said base plate |
| CN1385827A (en) * | 2001-05-10 | 2002-12-18 | 达碁科技股份有限公司 | Method for repairing data line of LCD |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001237431A (en) * | 2000-12-20 | 2001-08-31 | Semiconductor Energy Lab Co Ltd | Thin-film transistor |
| JP3977061B2 (en) * | 2001-11-21 | 2007-09-19 | シャープ株式会社 | Liquid crystal display device and defect repair method thereof |
-
2003
- 2003-07-04 CN CNB2006100942107A patent/CN100388460C/en not_active Expired - Fee Related
- 2003-07-04 CN CNB031465714A patent/CN1299324C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5429994A (en) * | 1993-07-22 | 1995-07-04 | Mitsubishi Denki Kabushiki Kaisha | Wiring forming method, wiring restoring method and wiring pattern changing method |
| US5518956A (en) * | 1993-09-02 | 1996-05-21 | General Electric Company | Method of isolating vertical shorts in an electronic array using laser ablation |
| CN1142057A (en) * | 1995-05-30 | 1997-02-05 | 株式会社先进展示 | Array base plate, liquid-crystal displaying device of thin-film transistor, and method for production of said base plate |
| CN1385827A (en) * | 2001-05-10 | 2002-12-18 | 达碁科技股份有限公司 | Method for repairing data line of LCD |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1567527A (en) | 2005-01-19 |
| CN100388460C (en) | 2008-05-14 |
| CN1877811A (en) | 2006-12-13 |
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