CN1295169C - Method of making optical fiber preform - Google Patents

Method of making optical fiber preform Download PDF

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Publication number
CN1295169C
CN1295169C CNB99815119XA CN99815119A CN1295169C CN 1295169 C CN1295169 C CN 1295169C CN B99815119X A CNB99815119X A CN B99815119XA CN 99815119 A CN99815119 A CN 99815119A CN 1295169 C CN1295169 C CN 1295169C
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Prior art keywords
deposit
plasma
target
concentration
layer
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CN1332702A (en
Inventor
M·I·古斯科夫
E·B·达尼洛夫
M·A·阿斯拉米
D·吴
J·E·马蒂森
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FIBERTUBE Inc
FiberCore Inc
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FIBERTUBE Inc
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C03B37/01861—Means for changing or stabilising the diameter or form of tubes or rods
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/01413—Reactant delivery systems
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/01413—Reactant delivery systems
    • C03B37/0142—Reactant deposition burners
    • C03B37/01426—Plasma deposition burners or torches
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/01466—Means for changing or stabilising the diameter or form of tubes or rods
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C03B37/01807—Reactant delivery systems, e.g. reactant deposition burners
    • C03B37/01815—Reactant deposition burners or deposition heating means
    • C03B37/01823—Plasma deposition burners or heating means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02—Optical fibres with cladding with or without a coating
    • G02B6/02057—Optical fibres with cladding with or without a coating comprising gratings
    • G02B6/02076—Refractive index modulation gratings, e.g. Bragg gratings
    • G02B6/02123—Refractive index modulation gratings, e.g. Bragg gratings characterised by the method of manufacture of the grating
    • G02B6/02152—Refractive index modulation gratings, e.g. Bragg gratings characterised by the method of manufacture of the grating involving moving the fibre or a manufacturing element, stretching of the fibre
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/02—Pure silica glass, e.g. pure fused quartz
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/08—Doped silica-based glasses doped with boron or fluorine or other refractive index decreasing dopant
    • C03B2201/12—Doped silica-based glasses doped with boron or fluorine or other refractive index decreasing dopant doped with fluorine
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/20—Doped silica-based glasses doped with non-metals other than boron or fluorine
    • C03B2201/28—Doped silica-based glasses doped with non-metals other than boron or fluorine doped with phosphorus
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/31—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with germanium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/32—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/40—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn
    • C03B2201/42—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn doped with titanium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2203/00—Fibre product details, e.g. structure, shape
    • C03B2203/10—Internal structure or shape details
    • C03B2203/22—Radial profile of refractive index, composition or softening point

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacture, Treatment Of Glass Fibers (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)

Abstract

Glass soot (130) is deposited on a glass rod by a burner (140). The body is stretched (126). More depositing and stretching is effected. The final body is then drawn into a fiber.

Description

Make the method for optic fiber preformed article
Technical field
The present invention relates to the method for the optic fiber preformed article of outside vapor deposition manufactured single mode of using plasma and multimode structure.
Background technology
Prior art has proposed to make the various schemes of silica glass prefabricated pipe and manufacturing optic fiber preformed article.Can form prefabricated pipe by adding thermal silicon dioxide and it being extruded by a slit.Prefabricated pipe and optic fiber preformed article can be made by doping of deposit on a target or non-doped silica, and adoptable technology for example has modified chemical vapor deposition (MCVD), vapor axial deposit (VAD), outside vapor deposition (OVD).Each method is all since the target of a rotation, and general shape is a pipe or solid bar, and is to be made by one of glass, pottery or some kinds of materials.In some cases, rod or pipe and preform are an integral body, and in other cases, rod can be removed.For example burner or plasma source are positioned at the following, top of rotation target or transversely with a thermal source.Thermal source forms glass particle for the forming of glass reaction provides required energy.According to the characteristics of technology processing for example VAD or the drying of OVD technology and the glass particle that sintering step prepares these deposits for next step.If adopt MCVD technology, just these glass particles are fused into the vitreous silica body with same thermal source.
When target was installed by level, in order to guarantee even deposit, thermal source moved along the length of target.If target is a pipe, can on the inner surface of pipe or outer surface, deposited glass form particle and material, if in interior outgrowth, then external diameter remains unchanged, if outgrowth outside, then external diameter becomes big.
If target is vertically arranged, it is around its vertical axis rotation, and burner is positioned at vertical top or in the horizontal, the while grows on radial and axial.Can form roughly cylindrical circular product like this, its diameter and length increase along with deposit.
People's such as Keck UPS3737292 discloses a kind of method of making optical fiber.On the outer wall of a prefabricated rods or parts, form a plurality of layers with predetermined refraction by flame hydrolysis and deposit.After these glass coatings cover on the rod, make the hollow cylinder of gained be heated and collapse and separate formation optical fiber.
People's such as Izawa USP4224046 has proposed a kind of method of making optic fiber preformed article.In burner, upwards spray two kinds of glass towards the round shape prefabricated component of the rotation of vertical installation and form material, oxygen, hydrogen and argons.Lower end at prefabricated component forms the dust-like glass particle by flame hydrolysis and deposit.Prefabricated component is drawn gradually up, between its growing end and burner, to keep a constant at interval.After deposit was finished, the dry and resulting dust-like preformed glass part of sintering was to form transparent preformed glass part.
People's such as MacChesney UPS4217027 has proposed a kind of technology of making preform, and it is commonly called Modified Chemical Vapor Deposition (MCVD) method.According to the method, spray by the muriate of silicon and germanium and oxygen or the steam that hydride constitutes to the inboard of Glass tubing.Preferably can form glass on the inwall at pipe at the chemical reaction that causes between these chemical substances according to correct condition by a horizontal hot-zone.The particular matter that is deposited on the pipe is melted by the hot-zone time.
The USP4412853 of Partus discloses a kind of MCVD method that is used for making the optic fiber preformed article prefabricated pipe.This method is that the tubular glass target of the rotation of installing from a kind of level begins, and has predetermined composition and optical characteristics.From being positioned at tubulose target below and sending into steam to tubulose target inside with the vertical thermal source of its length direction.Vapor reaction product deposit of Chan Shenging and clinkering are on the internal surface of tubulose target like this.The material of deposit has identical specific refractory power with the tubulose target, but the composition difference.Also proposed in the document and can obtain identical effect, but do not explained and how to realize by outside gas-phase oxidization process or a kind of outside vapor axial deposition method.
People's such as Geittner USP4741747 relates to plasma chemistry vapor deposition (PCVD) method of making optical fiber.In this PCVD method, at first Glass tubing is heated to the temperature between 1100 ℃ to 1300 ℃, under 1 to 30hPa pressure, feed reaction gas mixtures then, make plasma body in the inboard to-and-fro movement of Glass tubing, thereby glass coating is deposited on the inwall of Glass tubing.After the intact glass coating of deposit, this Glass tubing is collapsed separate solid preform of formation.Can draw out optical fiber from this preform.
People's such as Drouart USP5522007 has proposed the using plasma deposit and has made the optic fiber preformed article with high hydroxyl ion concentration.In this document, make it pass through a water pot enter an end of plasma torch at gas before with a telefault, in plasma-generating gas, suck hydroxyl ion.Plasma torch ejection on the substrate preform of rotation is mixed with the fused silica particle of hydroxyl ion.The mean concns that is deposited on its hydroxyl ion of preform on the target preform of Xing Chenging approximately is 50-100ppm like this.According to people's such as Drouart method, the decay of the optical fiber made from this technology is respectively 0.32dB/km and 0.195dB/km at 1310nm and 1550nm place.
Also there is following shortcoming in the aforesaid method of making preform except the multiple treatment step of needs:
1.MCVD and the PCVD method is slow treatment process, because deposition speed is very low;
2.MCVD and the limitation of size of the deposit pipe that uses in the PCVD method preform size; And
3.OVD and the VAD method is based on the method for flame hydrolysis, it can produce excessive water and need extra drying and sintering step just can make high-quality optic fiber preformed article.
Summary of the invention
The objective of the invention is provides a kind of method of making a kind of optic fiber preformed article of low hydroxy content with cheap cost by reducing step necessary in the manufacturing processed, increase the preform size and improving deposition speed.Above-mentioned and other purposes realize by optic fiber preformed article manufacture method of the present invention.
For this reason, the invention provides a kind of method of making optic fiber preformed article, may further comprise the steps: a target rod of being made by first material (a) is provided, and wherein said first material is silicon-dioxide or the silicon-dioxide that is doped with hotchpotch; (b) by plasma torch, simultaneously this above target rod deposit and sintering by first doped in concentrations profiled first silicon dioxide layer of first hotchpotch is arranged, with the described first silicon dioxide layer deposit be sintered to the first predetermined thickness; (c) will above be deposited with described first silicon dioxide layer this target rod pull down to the first predetermined diameter, to form a doped silica rod; (d) repeating step (b) and (c) (d1) reaches pre-determined number, or (d2) comprises the described doped silica rod of predetermined proportion until first material; (e) deposit has the second layer that is made of silicon-dioxide of second hotchpotch by second doped in concentrations profiled on described doped silica rod, described second silicon dioxide layer is deposited to the second predetermined thickness, to form intermediate structure; (f) the 3rd layer of deposit on intermediate structure is deposited to the 3rd predetermined thickness with the 3rd layer, thereby forms the preform structure, and trilaminar material is pure silicon dioxide or the silicon-dioxide that is doped with hotchpotch.
This method is further comprising the steps of: (g) apply an outer shell on preform structure, outer shell mainly is made of pure silicon dioxide and is applied to the 4th predetermined thickness.This method further comprises: step (f) afterwards and step (g) before preform structure is pulled down to the 3rd predetermined diameter.
In addition, the minimum value of the maximum value of second concentration when just beginning this silicon dioxide layer of the deposit deposit that becomes second silicon dioxide layer gradually when finishing.At this moment, this method also comprises: (g) apply an outer shell on preform structure, outer shell mainly is made of purified silicon-dioxide and is applied to the 4th predetermined thickness.This method may further include: before this preform structure is pulled down to the 3rd predetermined diameter afterwards and in step (g) in step (f).In addition, first hotchpotch can be identical with second hotchpotch, and first concentration can be identical with second concentration.
According to one aspect of the present invention, plasma source is placed near the prefabricated rods made from a kind of raw material.The two ends quilt clamping flatly of prefabricated rods, and around its longitudinal center line rotation.Plasma source is used to deposit according to the known first doping content doped silica.Length deposit doped silica along prefabricated rods grows into required diameter until prefabricated rods.To pull down by the complex body that prefabricated rods and doped silica constitute then, and extract a section of attenuating and be used as a secondary rod.The secondary rod has center that is made of raw material and the skin that is made of doped silica.At this silicon-dioxide of deposit with identical doping content again above secondary rod, also reach required diameter until it, pull down then, and extract one section.Deposit, drop-down, the step of extraction and deposit can repeat repeatedly.The result of this action is a doped silica rod, and it has the center that the raw material by first diameter constitutes and annular layer second external diameter and that be made of doped silica is arranged.
The doped silica rod is further handled.Specifically, with plasma source doped silica skin of deposit on the doped silica rod, and and in the past the same structure with gained drop-down and extraction attenuates one section.The hotchpotch that uses when forming skin can be selected to the specific refractory power that increases or reduce silicon-dioxide.
If along with the outer field process change concentration of dopant of deposit, just form a skin that changes gradually.In this case, the highest starting point concentration grade when outer changes to minimum end concentration scale when finishing outer deposit to concentration of dopant gradually from the beginning deposit.
If, just do not form a fractionated layer along with the outer field process change concentration of dopant of deposit.In this case, in the outer field whole process of deposit, adopt second concentration of dopant that is different from first concentration of dopant.
According to one side more of the present invention, to further handling by doped silica rod and the outer complex body that constitutes.With plasma source tectum of deposit on outer.If skin is gradual change, just can form this tectum with being doped with the silicon-dioxide of same hotchpotch with identical minimum end concentration scale.Or can or be doped with other hotchpotchs and the even silicon-dioxide formation tectum of the 3rd concentration of dopant with pure silicon dioxide.Where necessary, tectum also can be taked the doping of gradual change.
According to another aspect of the present invention, for the complex body that is made of doped silica rod, skin and tectum provides a shell.Can increase shell by further plasma deposition, or provide a kind of cover material above the complex body at this, heating is collapsed cover material and is separated and becomes final preform then.
In the plasma deposition process, adopt dry plasma gas to form plasma body with low hydroxy concentration.A kind of by SiCl 4The dry quartzy source gas that constitutes or other similar source gases and a kind of codoped sometimes with low hydroxy concentration has POCl 3Or PCl 5Dopant source gas GeCl for example 4Be introduced near the plasma body.Will make material transition become silicon-dioxide (SiO like this 2) or be doped with germanium oxide compound (GeO 2) and/or Vanadium Pentoxide in FLAKES (P 2O 5) silicon-dioxide, and be deposited on the target and a direct step is fused into the vitreous state quartz.
Described hotchpotch is from F, GeO 2, P 2O 5, TiO 2And Al 2O 3A kind of specific refractory power of selecting in the group that constitutes is material modified.In addition, this depositing step (e) and (f) at least one step be that the outside vapor deposition of using plasma is finished, it may further comprise the steps: a high frequency plasma welding torch that comprises coil is provided, its coil has a plurality of windings round a coil axis, this plasma body welding torch can be selected the location along the length of this target, and there is 30-55mm in the gap that this target and this coil are separated by; For this plasma body welding torch is introduced the plasma gas of a kind of hydroxy content less than 2ppm, to form plasma body; In being communicated with the zone of described plasma body, inject a kind of SiCl that comprises at least 4With a kind of source gas of hotchpotch, the hydroxy content of this source gas is less than 0.5ppm; Keep gap between target and the coil constant in, at least a reaction product of this plasma body and this source gas is deposited on the target.
Description of drawings
Above-mentioned and other features, all respects and advantage thereof of the present invention as can be seen in the accompanying drawings, in the accompanying drawings:
Fig. 1 represents to be used for carrying out the device of plasma deposition;
Fig. 2 is illustrated in the partial side view of the plasmatron that uses in the device of Fig. 1;
Fig. 3 represents the top view with the similar plasmatron shown in Fig. 2;
Fig. 4 represents the schema of plasma body in the plasmatron inside of Fig. 3;
Fig. 5 represents an optic fiber preformed article making according to method of the present invention.
Embodiment
Fig. 1 represents to be used for the device 20 of plasma body outside vapor deposition.This device comprises the cabin 22 of a sealing, to prevent introducing impurity in final product.
A lathe 24 is arranged in cabin 22, for example is the product that Heathway Ltd. or LittonEngineering Lab. provide.Lathe 24 has a headstock 25 and a tailstock 26.On headstock 25 and the tailstock 26 a pair of relative live spindle chuck 28 is housed, is used for clamping and has the roughly two ends of an elongated target 30 of cylindrical outer wall.Spindle chuck 28 rotates target 30 on the direction of arrow A 1.A mobile vehicle frame 32 that is installed in movably on the lathe 24 can be moving on the direction of target, shown in arrow A 2.
Plasma source 40 is supported on the vehicle frame 32.Vehicle frame 32 moves plasma source 40 along the length direction of target 30.Thereby with deposition of materials on the top of target 30 to form an optic fiber preformed article.Spindle chuck 28 rotation targets 30 make plasma source 40 round target deposition material equably, thereby form a pipe fitting 34 that has near the ideal cylindrical outer wall.
In a preferred embodiment, the plasma source 40 that is contained on the vehicle frame 32 moves along the major length part of target 30 is two-way.Plasma source 40 is moved and along its deposition material along this part of target 30.
Do not adopt plasma source 40 is moved along the length direction of target, but target 30 is moved and make plasma source 40 keep static.As long as with the headstock 25 of lathe move back and forth target with tailstock 26 so that on the target all relevant positions arrival plasma sources 40 directly over just can accomplish.
Another kind of mode is to arrange a plurality of plasma sources along the length compartment of terrain of target.Can reduce like this headstock 25 of lathe 24 and tailstock 26 or above plasma source is housed the moving of vehicle frame 32, which was more suitable for moving in the middle of this depended on the two.Under extreme case, on the length direction of target, be covered with many plasma sources, the vehicle frame 32 of lathe 24 or headstock 25 and tailstock 26 do not need to move.
In a preferred embodiment, plasma source 40 is plasmatron welding torches, introduces dried plasma gas by first gas tube 42 for it, and introduces a provenance gas by second gas tube 44.
Plasma gas mainly is to be made of the nitrogen of predetermined proportion and oxygen.Air just can be used as plasma gas.In this case, filtered air at first by first moisture eliminator 46, removed moisture before entering first gas tube 42.So just can guarantee that the hydroxy concentration of plasma gas is lower than the magnitude of 2.0ppm.With a flow director (MFC) 80 or the total amount that just can regulate delivering gas with a under meter.
Source gas comprises for example SiCl of a provenance chemical substance 4With at least a vector gas oxygen O for example 2Or nitrogen N 2Vector gas enters second moisture eliminator 48 to remove moisture, also can be very low with the hydroxy concentration of guaranteeing source gas, reach the magnitude of 0.5ppm.After vector gas was dried, elder generation was through a MFC 81, to obtain the source chemical substance before entering a scatterer 55.According to the characteristic of MFC, it also might use in the downstream of scatterer 55.The vector gas stream that will deliver the source chemical substance is then delivered to second gas tube 44.Just can before arriving plasma torch, introduce in air-flow a kind of dopant gas as long as open valve 57.
In a preferred embodiment, the source chemical substance is SiCl 4Select this chemical substance to be because its reaction property in plasma body.Specifically, SiCl 4A kind of source as Si is used for forming the SiO that is deposited on the target 30 2Hotchpotch can be taked SiF 4Or SiF 6The fluoride-doped gas of form.The fluoride-doped thing can reduce specific refractory power and change quartzy viscosity.In addition, the nitride hotchpotch can also increase the design flexibility of optic fiber preformed article.Yet, well-known, if wish to increase specific refractory power, can adopt GeO 2Or other equivalent substance are as hotchpotch.
In a preferred embodiment, be used for GeO 2The source chemical substance be GeCl 4The chemical substance of why selecting this purity is because it and SiCl 4Have similar physics and chemical property.GeCl 4Mode of movement and SiCl 4Similar.Obtain source chemical substance GeCl from the vector gas of moisture eliminator 48 entering scatterer 83 4Can be separated to another branch before, regulate by a MFC82 at this.With control chemical substance SiCl 4Mode similar, this MFC also can be positioned at the downstream of scatterer.This air-flow can be sent into gas tube 44 and before entering plasma torch, form a kind of mixture.Also can directly introduce GeCl with an independent circuit 84 to plasma torch 4Air-flow.Adopt the advantage of independent delivery conduit to be to reduce GeCl as far as possible 4And SiCl 4Between the competition chemical reaction.Be used for replacing germanium oxide (GeO 2) be used to mix or and other source chemical substances of germanium oxide codoped for example POCl is arranged 3, POCl 5Or the like material, and other can increase the hotchpotch of specific refractory power, for example contains the aluminium and the titanium of chemical substance.
Fig. 2 represents to be positioned at the side sectional view of the plasmatron welding torch 40 of target 30 belows.Plasmatron welding torch 40 comprises a generally tubular welding torch shell 50 made from quartzy.The diameter of shell is 60mm, highly is 220mm.Yet also can adopt the diameter range of 40-80mm and the altitude range of 180-400mm.
Copper ruhmkorff coil 52 is housed around shell 50 tops.Coil 52 comprises a plurality of windings 54, and its diameter is about 72mm, each interval 6mm.Gap between shell and the coil can be between 2-10mm.The outside surface distance apart of the topmost of the coil 52 shown in top winding 54 ' and tube-like piece 34 represents that with L this distance approximately is 30-55mm.
Along with the deposit of silica glass, its external diameter increases gradually.Yet can keep this distance L by the height of regulating the brace table 56 that is used for laying plasma torch 40 on it.56 of brace tables are installed on the vehicle frame 32, and laterally move with it.At first, brace table 56 is positioned at predetermined height, and this height reduces along with the increase of deposition material diameter in deposition process.So just can keep the predetermined distance between plasma torch 40 and the deposition material.Be installed on the vehicle frame 32 and be connected to the optics of a controller or other transmitters can be used for measuring the distance of tube-like piece 34 with the vehicle frame of radially growth, and correspondingly regulate the height of brace table 56.
Each side at shell 50 topmosts is provided with a plasma stability rod 58.Each stabilization rod is all made with quartz body, and comprises a U-shape groove from the edge horizontal expansion of shell 50.The diameter of stabilization rod 58 is 60mm, extends radially out each 20mm from shell edge to both sides, and diameter that can adopt and length range are respectively 40-80mm and 15-40mm.When using plasma torch 40, stabilization rod 58 is aimed at target abreast.This layout helps to be deposited to the distribution of the reaction source chemical substance on the tube-like piece 34 of growth.
A pair of injection port 60 is connected to plasmatron welding torch 40 with second gas tube 44 of delivery source chemical substance.Injection port 60 enters shell along shell 50 a bit going up between the top winding 54 ' of coil 52 and stabilization rod 58 from substantially the same height.Injection port 60 is that the silica tube by diameter 5mm constitutes, and plasmatron welding torch 40 operable caliber scopes of the present invention are 3-10mm.In a preferred embodiment, a pair of injection port 60 enters shell 50 at identical height, and its radial position toward each other.Yet also can replace this two mouths by above injection port 60 with three of symmetric arrangement.Two injection ports 60 below the stabilization rod in Fig. 2, have been represented to be directly arranged in.Yet this is not to be indispensable, and from the top of plasmatron welding torch shown in Figure 3, injection port 60 and stabilization rod 58 can have the skew on the angle.
A pair of plasma gas inlet 62 will carry first gas tube 42 of plasma gas to be connected to plasmatron welding torch 40.Plasma gas inlet 62 enters shell sentencing substantially the same height near outer casing base.These inlets 62 are that the stainless steel tube by diameter 5mm constitutes, and the diameter of this steel pipe also can be selected within the specific limits.
Plasmatron welding torch 40 also is provided with coolant entrance 64 and outlet 66.In use, refrigerant for example is that water is by entering the mouth 64 at the outer wall internal recycle of shell 50 and from exporting 66 outflows.Coolant entrance and outlet are what the stainless steel tube by diameter 5mm constituted.The same with injection port with the plasma gas inlet, this diameter also can change.
Plasma gas inlet 62, coolant entrance 64 and coolant outlet 66 all are arranged in the stainless steel cabin 68.Cabin 68 is a long 80mm of side and a stainless steel square that highly is approximately 40mm.Be installed on the brace table 56 in cabin 68, and brace table is installed in again on the vehicle frame 32 that moves along target 30.
A radio-frequency generator (not shown) is connected to coil 52 with circuit, exports for it provides up to the variable power of 80KW with the frequency of about 5.0MHz.In a preferred embodiment, the model of producer is the T-80-3MC that Lepel Corporation is produced.With this producer of 60Hz three-phase 460V power drives with activated plasma pipe welding torch 40.Or model IG 60/5000 producer that adopts German FritzHuttinger Electronic GmbH to produce.
Fig. 4 be illustrated in by enter the mouth 62 when sending into the exsiccant plasma gas in the plasmatron welding torch 40 inner plasma jet flow 70 that form.Plasma jet flow 70 is round the longitudinal axis A of welding torch ' be roughly symmetric.The position of injection port 60 is such, just above null 1 V of the vertical speed of plasma body the source chemical substance is introduced plasma body.So just formed required fluid dynamics structure and the hot-fluid of source chemical substance is ejected in the marginal layer, and be deposited to effectively on the tube-like piece 34 of growth.Although have the injection port that laterally enters shell in the preferred embodiment, be not to be indispensable.Another kind of mode is for using along the longitudinal axis A of plasmatron welding torch 40 ' the water-cooled probe that extends introduces source gas at the center of plasma jet flow 70.
Fig. 5 represents a kind of known process that can finish with lathe 124.The PFH842XXLS Precision Quartz and Glass WorkingLathe that for example can adopt Heathway to make.The headstock 125 and the tailstock 126 of lathe 124 can vertically move relative to one another.Facilitating the length that loading and unloading have been deposited on the initial target like this is the workpiece of finishing 130 of L3.Specifically, the part of workpiece can also be pulled down and make a secondary rod than original target reduced.Feasible method is to keep headstock 125 static, and tailstock 126 is removed from headstock 125, and plasma source 140 is moved on the direction opposite with tailstock 126.Or by an end that plasma source 140 or other thermal source is placed on workpiece 130 it is softened to realize.On same direction, still respectively headstock 125 and tailstock 126 are moved a distance L 5 then, L4, the position 125 ', 126 ' of the virtual image among the arrival figure with different speed.So just can obtain a thin secondary rod, it can (but not needing) have identical diameter with original target.According to known to a person skilled in the art, the workpiece that secondary rod and being used for forms it has identical cross section composition, a center roughly the same with the composition of original target is arranged, and the material that is deposited on above the target in its skin and the making workpiece process is roughly the same.
It is enough far away that lathe 124 can make headstock 125 and tailstock 126 move longitudinally to, and the secondary rod is stretched over distance L 4, and the length L 3 of this length and its workpiece of generation about equally.Can downcut the secondary rod from workpiece, be installed to replacement workpiece 130 on the lathe, and next time with plasma source 140 deposits the time, be used as target.Like this, target original or that produce first just can be used for producing the workpiece that produces first, and the secondary rod of therefrom pulling out can be used as the target that secondary produces.Deposit just can form the workpiece that secondary produces on the target that secondary produces, and the rest may be inferred.Carry out plasma deposition and form workpiece on target, an end that stretches workpiece to be forming the rod of a diameter reduction, and can repeat arbitrary number of times with the rod of this diameter reduction as this repetitive process that next target is used for further deposit.
If the material that is deposited on above the target is constant in whole repetitive process, N time repeatedly the result of step be exactly a rod that produces for N time, this is identical but the very little composition in its center is but with the initial target subbase, and annular layer is the material that is deposited on above the target.For example, if the diameter of original target is D1 and the diameter of last workpiece is D2=M * D1, the ratio of original target material in the workpiece that produces first is 1/M approximately just 2If the target that diameter is the secondary of D1 to be produced draws from this workpiece form, and the material of deposit in the above enough to form diameter be the workpiece that the secondary of D2 produces, the ratio of contained original target material is 1/M approximately just in the workpiece that secondary produces 4This shows that as long as control M just can form so a kind of workpiece in deposition process along with total degree repeatedly, its inside has the original target material of predetermined proportion.
The method that forms a kind of multimode optical fibers preform with above-mentioned technology repeatedly below will be described.The more given sizes for more detailed explanation is provided.Yet must notice and in actual procedure, can also adopt multiple different value.
This method at first provides a level and is installed in the target that produces first on the lathe, and is for example shown in Figure 5.Target is preferably made with purified silicon-dioxide, and it can purchase from the market supply merchant there, for example the product type F300 that provides of the Heraeus Amersil of Georgia.The target of Chan Shenging also can be the doped silica rod with N generation of current methods formation first.In a preferred embodiment, the target length of Chan Shenging is 1 meter first, diameter D1=6mm.
Use the deposit on the target that produces first of above-mentioned plasma source to be doped with GeO 2Silicon-dioxide.GeO 2Concentration of dopant depend on the required numerical aperture (NA) of multimode optical fibers that needs are produced.For example, be 0.2 optical fiber in order to form NA, GeO 2The maximum value of concentration of dopant is about 10%.If formation NA is 0.275 optical fiber, then GeO 2The maximum value of concentration of dopant is about 18%.
In deposition process, concentration of dopant can be remained unchanged, will form the fractionated layer like this.Or by changing the layer that concentration of dopant forms a kind of gradual change gradually.This process is to be waited by a microcontroller to control the under meter that can regulate automatically and introduce hotchpotch and realize.Layer that it should be noted that classification and gradual change is one by one in the workpiece that produces successively, also can form the layer with different constant doping concentration one by one.Layer that so just can a gradual change of deposit on the target that produces first, fractionated layer of deposit above the target of the secondary that the workpiece that will produce first is drop-down after, forms then generation.Equally, also can be on the layer of a gradual change above being deposited on the target that primary produces first fractionated layer of deposit.First hierarchical layer that also can have first concentration of dopant a deposit above the target, and deposit has second hierarchical layer of second concentration of dopant on the target that thereupon produces.Can also deposit on above-mentioned any structure other gradual change or fractionated layer.
In a preferred embodiment, be doped with 18%GeO 2Silicon-dioxide deposit on the target that produces first of 6mm diameter become a fractionated layer, be 1 meter until forming a length, the workpiece of diameter D2=48mm (M=8 just).The section area of the workpiece that produces first that obtains so approximately is 64 times of the target that produces first of primary.Pull into 64 doped silica rods that produce first then under the workpiece that this is produced first, length separately is 1 meter, and diameter is 6mm.These doped silica rods can be used as the target that a secondary produces then respectively.
The target that secondary is produced is contained on the lathe, and applies a secondary illuvium, and forming diameter is the workpiece of the secondary generation of 48mm.The secondary deposit is to carry out according to the constant doping substrate concentration identical with deposit first.Keep same concentration of dopant from start to finish in deposition process, form a doped silica rod that produces first, it has one by original target material a center that constitutes and an annular layer with substantially the same composition.So just can guarantee that the optical characteristics of the second layer and the first layer that was deposited in the past on the original target are substantially the same.Pull into the doped silica rod that 144 secondaries produce under the workpiece that this secondary is produced then, length separately is 1 meter, and diameter is 4mm.They can be used separately as the target of three generations.It should be noted that and to continue to carry out this repetitive process, the layer that further deposit has identical concentration of dopant.Yet, on a certain degree, just can form the workpiece of ideal behavior with original target material, after this just needn't be more repeatedly.In fact, even after forming the workpiece that produces first just can obtain this ideal effect.
In a preferred embodiment, external diameter of deposit is approximately the gradual change illuvium of 80mm on the target that for three times of the 4mm diameter produces.Concentration of dopant near the outer surface of the target that produces for three times with 18%GeO 2Maximum value begin, and reduce to the 0.1%GeO that is about at outermost layer position gradually 2Minimum value, at this, its external diameter approximately is 80mm.So just formed a workpiece that produces for three times, it has a center that is made of original target and has substantially the same optical characteristics and as broad as long substantially each other two layers and one the 3rd graded bedding.
Further handle the workpiece of three generations of this 80mm diameter in a preferred embodiment, form a basic optic fiber preformed article.Specifically, tectum of deposit or barrier layer on the workpiece of three generations.Tectal thickness depends on the model of the optic fiber preformed article that ultimate demand is made.With 62.5/125 optic fiber preformed article is example, and final basic preform should have the finished diameter of about 93mm.For 50/125 optic fiber preformed article, final basic preform should have the finished diameter of about 96mm.Tectum is by deposit doped with Ge O 2Silicon-dioxide form, the minimum doping content that adulterated concentration adopts when forming the 3rd layer is identical, just 10% GeO 2The center of the center that is configured in of Xing Chenging with original target material like this, the second layer with a pair of constant doping amount of same optical properties, concentration of dopant is from a graded bedding of peak to peak gradual change, and by a tectum that constitutes according to the minimum value doped silica.
After adding upper caldding layer, also need the final basic preform that stretches, to form the finished product preform.With single diameter is that 1 meter long 62.5/125 preform of 93mm is an example, can obtain 81 meter long preforms, and external diameter separately is 32mm.From single diameter is that 1 meter long 50/125 preform of 96mm can obtain 12 1 meter long preforms, and external diameter separately is 27mm.
An outer shell can be provided on the tectum of these preforms.Outer shell preferably has the specific refractory power identical with purified silicon-dioxide.Can use pure silicon-dioxide to form this shell by the outside vapor deposition of plasma body.Or a pipe or a sheet with pure silicon-dioxide of suitable diameter or width is provided in the preform periphery, and heating is melted on the preform to form the optic fiber preformed article of finished product shell.In a preferred embodiment, the external diameter of finished product optic fiber preformed article approximately is 56mm.Can be drawn into the optical fiber that diameter is about 200Km of 125 μ m with this finished product preform then.
Cover and further outer shell although provide, it should be noted that and also can abandon covering step and directly provide a pipe as shell for the workpiece that produces for three times after stretching in order to obtain preferred properties.
A kind of similar method of making the single-mode fiber preform can adopt following steps to realize.Original target can be a purified silica bar, and it can be the rod of F300 rod of there purchasing from Heraeus or N-generation of the pure silicon-dioxide that oneself makes.On target according to the silicon dioxide layer of a plurality of doped fluorides of constant concentration deposit, until reaching required diameter.Can draw out single-mode fiber from this preform.For example F of the different glass refraction modified material of many kinds is arranged, GeO 2, P 2O 5, TiO 2, Al 2O 3Or the like and the appropriate combination thing can be used for making adulterated core and/or adulterated tectum.The target that uses in the preferred embodiment is a kind of doped with Ge O of N-generation 2Rod, pure silicon-dioxide of deposit in the above or doped silica tectum.When reaching required diameter, just made this preform.
Although the present invention describes with reference to concrete preferred embodiment, they should not be regarded as limitation of the present invention.Those skilled in the art can recognize that fully these embodiment can revise, and these modifications all drop within the described scope of the present invention of claims.

Claims (19)

1. method of making optic fiber preformed article may further comprise the steps:
(a) provide a target rod of being made by first material, wherein said first material is silicon-dioxide or the silicon-dioxide that is doped with hotchpotch;
(b) by plasma torch, simultaneously this above target rod deposit and sintering by first doped in concentrations profiled first silicon dioxide layer of first hotchpotch is arranged, with the described first silicon dioxide layer deposit be sintered to the first predetermined thickness;
(c) will above be deposited with described first silicon dioxide layer this target rod pull down to the first predetermined diameter, to form a doped silica rod;
(d) repeating step (b) and (c)
(d1) reach pre-determined number, perhaps
(d2) comprised the described doped silica rod of predetermined proportion until first material;
(e) deposit has the second layer that is made of silicon-dioxide of second hotchpotch by second doped in concentrations profiled on described doped silica rod, described second silicon dioxide layer is deposited to the second predetermined thickness, to form intermediate structure;
(f) one the 3rd layer of deposit on described intermediate structure is deposited to the 3rd predetermined thickness with the 3rd layer, thereby forms the preform structure, and wherein said trilaminar material is pure silicon dioxide or doped silica.
2. according to the method for claim 1, it is characterized in that this method further may further comprise the steps: (g) apply an outer shell on this preform structure, this outer shell mainly is made of pure silicon dioxide and is applied to the 4th predetermined thickness.
3. according to the method for claim 2, it is characterized in that this method further may further comprise the steps: step (f) afterwards and step (g) before this preform structure is pulled down to the 3rd predetermined diameter.
4. according to the method for one of claim 1 to 3, it is characterized in that described hotchpotch is from F, GeO 2, P 2O 5, TiO 2And Al 2O 3A kind of specific refractory power of selecting in the group that constitutes is material modified.
5. according to the method for claim 1, it is characterized in that, second concentration in this step (e) is different from described first concentration, this method further may further comprise the steps: in the process of this second silicon dioxide layer of deposit this second concentration is remained on steady state value, thereby make the specific refractory power of described doped silica rod and described second silicon dioxide layer form a kind of fractionated specific refractory power section.
6. according to the method for claim 1, it is characterized in that, be included in the step that changes second concentration in the process of deposit second silicon dioxide layer.
7. according to the method for claim 6, it is characterized in that the maximum value of the deposit that the minimum value that second hotchpotch is fluorine and this second concentration when just beginning the described silicon dioxide layer of deposit becomes described second silicon dioxide layer gradually when finishing.
8. according to the method for claim 6, it is characterized in that the minimum value of the deposit that the maximum value of described second concentration when just beginning this silicon dioxide layer of deposit becomes this second silicon dioxide layer gradually when finishing.
9. according to the method for claim 8, it is characterized in that the maximum value of described second concentration is substantially equal to described first concentration.
10. according to the method for claim 8, it is characterized in that, the 3rd of deposit the layer is a tectum that forms by the outside vapor deposition of plasma body in step (f), and this tectum is mainly by constituting with this second hotchpotch doped silica according to described minimum value.
11. the method according to claim 8 is characterized in that, the 3rd of deposit the layer is a tectum that forms by the outside vapor deposition of plasma body in step (f), and this tectum mainly is to be made of the silicon-dioxide that is doped with fluorine.
12. the method according to claim 1 is characterized in that, the 3rd of deposit the layer is a tectum that forms by the outside vapor deposition of plasma body in step (f), and this tectum mainly is to be made of the silicon-dioxide that is doped with fluorine.
13. the method according to claim 8 is characterized in that, further may further comprise the steps: (g) apply an outer shell on this preform structure, this outer shell mainly is made of purified silicon-dioxide and is applied to the 4th predetermined thickness.
14. the method according to claim 13 is characterized in that, further may further comprise the steps: before this preform structure is pulled down to the 3rd predetermined diameter afterwards and in step (g) in step (f).
15. method according to claim 1, it is characterized in that, this depositing step (e) and (f) at least one step be that the outside vapor deposition of using plasma is finished, it may further comprise the steps: a high frequency plasma welding torch that comprises coil is provided, its coil has a plurality of windings round a coil axis, this plasma body welding torch can be selected the location along the length of this target, and there is 30-55mm in the gap that this target and this coil are separated by; For this plasma body welding torch is introduced the plasma gas of a kind of hydroxy content less than 2ppm, to form plasma body; In being communicated with the zone of described plasma body, inject a kind of SiCl that comprises at least 4With a kind of source gas of hotchpotch, the hydroxy content of this source gas is less than 0.5ppm; Keep gap between target and the coil constant in, at least a reaction product of this plasma body and this source gas is deposited on the target.
16. the method according to claim 15 is characterized in that, in plasma torch, be positioned at just plasma body the speed on this coil axis direction be zero a bit above introduce this source gas.
17. the method according to claim 15 is characterized in that, this target winding immediate with it described gap that is separated by.
18. the method according to claim 16 is characterized in that, further is included in plasma gas and is introduced into the plasma torch step of dry plasma gas before.
19. the method according to claim 1 is characterized in that, described first hotchpotch is identical with second hotchpotch, and described first concentration is identical with second concentration.
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