CN1290645C - Alar electromagnetic hardening method - Google Patents
Alar electromagnetic hardening method Download PDFInfo
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- CN1290645C CN1290645C CN 200410087637 CN200410087637A CN1290645C CN 1290645 C CN1290645 C CN 1290645C CN 200410087637 CN200410087637 CN 200410087637 CN 200410087637 A CN200410087637 A CN 200410087637A CN 1290645 C CN1290645 C CN 1290645C
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- 238000000034 method Methods 0.000 title claims abstract description 22
- NOQGZXFMHARMLW-UHFFFAOYSA-N Daminozide Chemical compound CN(C)NC(=O)CCC(O)=O NOQGZXFMHARMLW-UHFFFAOYSA-N 0.000 title description 6
- 238000005266 casting Methods 0.000 claims abstract description 26
- 230000005672 electromagnetic field Effects 0.000 claims abstract description 20
- 230000008018 melting Effects 0.000 claims abstract description 3
- 238000002844 melting Methods 0.000 claims abstract description 3
- 238000005496 tempering Methods 0.000 claims description 7
- 238000009749 continuous casting Methods 0.000 claims description 4
- 229910000676 Si alloy Inorganic materials 0.000 claims description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000005674 electromagnetic induction Effects 0.000 claims description 3
- 239000000956 alloy Substances 0.000 abstract description 42
- 229910045601 alloy Inorganic materials 0.000 abstract description 40
- 230000005496 eutectics Effects 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 10
- 238000007712 rapid solidification Methods 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 3
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical class [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 abstract description 2
- 230000009467 reduction Effects 0.000 abstract description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 abstract 4
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000009776 industrial production Methods 0.000 abstract 1
- 229910000632 Alusil Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000012071 phase Substances 0.000 description 6
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 5
- 238000005275 alloying Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 210000001787 dendrite Anatomy 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 159000000000 sodium salts Chemical group 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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Abstract
The present invention relates to an electromagnetic hardening method for aluminium silicon series alloys. The method has the following procedures: aluminium silicon alloys are melted at first at a melting temperature of 800 to 1000 DEG C; for the aluminium silicon alloys needed to be added with other alloy elements, the other alloy elements are added after the aluminium silicon alloys are completely melted and uniformly mixed; the temperature is risen to 740 to 840 DEG C after the alloy elements are added, and a deairing treatment for the alloy elements is carried out. The casting is carried out on a semicontinuous casting machine; the casting temperature is from 80 to 150 DEG C higher than that of a liquidus line; the casting speed is from 70 to 130 mm/min. The present invention has the key point that a low-frequency electromagnetic field is additionally applied to aluminium silicon alloy melt in the casting process; the frequency of the magnetic field is controlled within 15 to 50HZ; the magnetic field intensity is from 10000 to 20000 ampere turns. The present invention has the advantages of simple hardening method, easy operation, easy control, obvious deterioration effect and no influence on final chemical composition of alloys; besides, the electromagnetic hardening not only can refine eutectic structures, and can also refine primary phases. Compared with rapid solidification technology, the electromagnetic hardening method has the advantages of great cost reduction and easy industrial production.
Description
Technical field
The present invention relates to the shaping of metal material, be specifically related to Alar electromagnetic hardening method.
Background technology
Alar is most widely used a kind of alloy material in Birmasil, and it has, and unit weight is little, intensity is high, casting
Make series of advantages such as the good and processing characteristics of formability is good, become in the manufacturing one of the most valued structural material.But Eutectic Silicon in Al-Si Cast Alloys is thick sheet in the alusil alloy tissue, and the size of silicon phase, form and distribution situation are poor, has seriously isolated matrix, has reduced the intensity and the plasticity of alloy, and this problem is more outstanding along with the raising of Si content.Changing the form of silicon phase, reduce its weakening effect to substrate performance, is the effective way that improves the alusil alloy performance.At present, the main method of improving silicon phase morphology in the alusil alloy has: rotten processing, rapid solidification, vibration and stirring etc.
Up to now, the alterant element of hypoeutectic al-si alloy also has strontium, tellurium, barium, antimony, potassium, rare earth, boron, sulphur etc. except that sodium.What wherein, application was more is the alterant that contains sodium and strontium.The main alterant element of transcocrystallized Al-Si alloy is phosphorus and strontium.The alterant that uses in the actual production mainly is sodium salt, strontium aluminium alloy, rare earth, red phosphorus and phosphorous intermediate alloy.Rotten processing can refinement silicon mutually and change its pattern, but the adding of alterant has changed alloy composition, simultaneously various alterants exist different incubation period and ageing, and are not only complicated but also more or less also all there is certain influence in the final performance of alloy in the practical application.
Flash set technology was come out the sixties in 20th century, and so-called rapid solidification is promptly quite fast to the cooling velocity of solid phase by liquid phase, thus obtained traditional casting or ingot casting composition, phase structure or the microstructure that can not obtain.The cooldown rate of rapid solidification usually 104 ℃/more than the S.Rapid solidification can significantly reduce the crystallite dimension of alloy material, refinement microstructure; Can greatly improve the solid solubility of alloying element; Obtain the uniform microstructure of few segregation or segregation-free.At present, countries such as Japan, the U.S. and Holland are more active in the research in this field, and China also has many universities and research institution to carry out the research of this respect.Rapid solidification Al-Si cost of alloy is higher to be its main reason that is widely used of restriction.
Vibration and stirring technique also are in the laboratory research stage at present, and the effect instability can't be used aborning.
Summary of the invention
The objective of the invention is provides a kind of Alar electromagnetic hardening method in order to overcome the defective that prior art exists, and improves the tissue and the performance of cast Al-Si alloy.Its hardening and tempering method is simple, and is easy to operate, and the alusil alloy modification effect is obvious, and the chemical composition final to alloy has no effect, and the hardening and tempering method cost is low, and is easy to suitability for industrialized production.
Alar electromagnetic hardening method of the present invention is undertaken by following processing step:
1) melting aluminum silicon alloy at first, fusion temperature is 800～1000 ℃;
2) add the alusil alloy of other alloying element for needs, after aluminium silicon melts fully and mixes, add other alloying element;
3) behind the interpolation alloying element, be warming up to 740～840 ℃, alloy solution is carried out degassing processing;
4) cast on semicontinuous casting machine, casting temperature is higher than 80～150 ℃ of liquidus curves, and casting speed is 70～130mm/min, and its main points are that alusil alloy melt casting process applies a kind of low frequency electromagnetic field at home and abroad.
Above method is the step that adopts when need adding alloying element, when not needing to add when containing gold element then after the alusil alloy fusing, directly enters casting.
Applying low frequency electromagnetic field outside recited above, is to produce low frequency electromagnetic field by being arranged in the outer electromagnetic induction coil of traditional crystallizer.The alusil alloy melt, because effect of contraction by electromagnetic force, reduce the height of contact wire of metal bath and crystallizer, change heat flux distribution and melt temperature inside field and field of flow in the ingot casting cooling procedure, played the size and the pattern that change primary crystal Si, eutectic Si phase effectively, reached the effect that α dendrite and eutectic are evenly distributed and improve ingot surface quality for hypoeutectic alloy; Make eutectic alloy obtain tiny, uniform eutectic structure; Make the fined and even distribution of primary crystal Si in the hypereutectic alloy.
Arrange electromagnetic induction coil outside the crystallizer of alusil alloy melt casting, field frequency is controlled to be 15～50HZ, magnetic field intensity is 10000～20000 ampere-turns.
The present invention has tangible advantage and effect compared with prior art:
(1) hardening and tempering method is simple, and is easy and simple to handle, is easy to grasp, and modification effect is obvious.From embodiment 1,2,3 to A356 alusil alloy, 4045 alloys, the Al-20Si alloy, it is modified and do not apply the modified contrast test of electromagnetic field to have carried out applying electromagnetism respectively, its result, alloy metallographic structure such as Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7, shown in Figure 8 prove that its modification effect is very obvious;
(2) owing to do not add any alterant in the electromagnetism hardening and tempering method, the chemical composition final to alloy has no effect; Simultaneously, electromagnetism modified both can refining eutectic organize also can the refinement primary phase;
(3) compare with flash set technology, electromagnetism hardening and tempering method cost has great reduction;
(4) the electromagnetism hardening and tempering method is easy to suitability for industrialized production.
Description of drawings
Fig. 1 is an A356 alloy in the example 1, does not apply the metallographic structure figure of low frequency electromagnetic field;
Fig. 2 is an A356 alloy in the example 1, applies the metallographic structure figure of low frequency electromagnetic field;
Fig. 3 is 100 times of metallographic structure figure that 4045 alloys do not apply low frequency electromagnetic field in the example 2;
Fig. 4 is 100 times of metallographic structure figure that 4045 alloys apply low frequency electromagnetic field in the example 2;
Fig. 5 is 1000 times of metallographic structure figure that 4045 alloys do not apply low frequency electromagnetic field in the example 2;
Fig. 6 is 1000 times of metallographic structure figure that 4045 alloys apply low frequency electromagnetic field in the example 2;
Fig. 7 is the metallographic structure figure that the Al-20Si alloy does not apply low frequency electromagnetic field in the example 3;
Fig. 8 is the metallographic structure figure that the Al-20Si alloy applies low frequency electromagnetic field in the example 3.
The specific embodiment
Example 1: with the A356 alloy blank is raw material, add heating in the resistance furnace, smelting temperature is 800 ℃, set the solenoid number of turn 100 circles, casting machine speed 130mm/min determines that field frequency is 30Hz, and magnetic field intensity is 10000 ampere-turns, when cast temperature was 720 ℃, horizontal continuous-casting obtained ingot blank.
Its result is more as shown in Figure 1 and Figure 2:
(1) low frequency electromagnetic casting and the casting that does not apply low frequency electromagnetic field relatively, drawing low frequency electromagnetic casting can crystal grain thinning, obtains tiny α-Al and organizes and eutectic structure.
(2) apply low frequency electromagnetic field, can improve the intracrystalline content of silicon in aluminium, eutectic regions and crystal boundary are narrowed down, and the distribution of silicon is more even.
Example 2: (particle size is 10～40mm) shop fixtures, presses full fine aluminium piece above, is warming up to 900 ℃, and with the aluminium fusing and be incubated 3 hours, fully stirring is silicon dissolving fully in aluminum solutions with silicon grain in graphite crucible.Set the solenoid number of turn 100 circles, casting machine speed 100mm/min determines that field frequency is 50Hz, and magnetic field intensity is 15000 ampere-turns, and when cast temperature was 710 ℃, horizontal continuous-casting obtained ingot blank.
Its result is relatively as Fig. 3, Fig. 4, Fig. 5, shown in Figure 6:
(1) it is thicker and inhomogeneous not add the α-Al dendrite of electromagnetic field: the α-Al dendrite that adds electromagnetic field is tiny and even.
(2) it is bigger and inhomogeneous not add the eutectic Si crystallite dimension of electromagnetic field, and some position is a bunch shape growth; Add the less and even distribution of eutectic Si crystallite dimension of electromagnetic field, fine and closely woven.
Example 3: with the Al-20Si intermediate alloy is raw material, is heated to 1000 ℃, insulation 30min.Set the solenoid number of turn 100 circles, casting machine speed 70mm/min determines that field frequency is 15Hz, and magnetic field intensity is 20000 ampere-turns, and when cast temperature was 840 ℃, horizontal continuous-casting obtained ingot blank.
Its result is relatively as Fig. 7, shown in Figure 8:
(1) for transcocrystallized Al-Si alloy, low frequency electromagnetic casting can refinement primary silicon particle and is changed its pattern.
(2) the obvious eutectic structure of refinement transcocrystallized Al-Si alloy of electromagnetic casting has produced significant metamorphism.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410087637 CN1290645C (en) | 2004-11-22 | 2004-11-22 | Alar electromagnetic hardening method |
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| CN 200410087637 CN1290645C (en) | 2004-11-22 | 2004-11-22 | Alar electromagnetic hardening method |
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| CN1605410A CN1605410A (en) | 2005-04-13 |
| CN1290645C true CN1290645C (en) | 2006-12-20 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1314501C (en) * | 2005-07-11 | 2007-05-09 | 东北大学 | Electromagnetic semi-continuous casting method and casting device for aluminum alloy pipe |
| CN101745620B (en) * | 2008-12-15 | 2012-07-04 | 北京有色金属研究总院 | Method for quickly preparing hypereutectic Al-Si alloy bar billet at low cost |
| CN102011033B (en) * | 2010-12-24 | 2012-01-18 | 哈尔滨工业大学 | Method for preparing aluminum-based gradient composite material under action of traveling wave magnetic field |
| CN102950273B (en) * | 2011-08-22 | 2014-07-09 | 中国科学院金属研究所 | Method for manufacturing monotectic alloy compound wire with dispersion surface layer |
| CN108277399A (en) * | 2018-01-24 | 2018-07-13 | 合肥万之景门窗有限公司 | A kind of door and window high-strength abrasion-proof type aluminum alloy materials and its heat treatment process |
| CN112301240A (en) * | 2020-10-21 | 2021-02-02 | 包头铝业有限公司 | A method for preparing Al-Si-Mg alloy by using electromagnetic energy |
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