CN1289626C - Cerium-based polish and cerium-based polish slurry - Google Patents
Cerium-based polish and cerium-based polish slurry Download PDFInfo
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- CN1289626C CN1289626C CN 02811936 CN02811936A CN1289626C CN 1289626 C CN1289626 C CN 1289626C CN 02811936 CN02811936 CN 02811936 CN 02811936 A CN02811936 A CN 02811936A CN 1289626 C CN1289626 C CN 1289626C
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- cerium
- cerium base
- polishing material
- base polishing
- polishing
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Abstract
A polish containing cerium oxide as a principal component, when dispersed in water in an amount of 10 % by mass, has a precipitate bulk specific density in the range of 0.8 g/ml to 1.0 g/ml, having a primary particle size in the range of 40nm to 80nm and a specific surface area in the range of 2m2/g to 5m2/g. The thus obtained polish provides the cerium-based polish and the cerium-based polish slurry that increase the polishing speed and cause few scratches inflicted on the surface of polish and achieve high quality of the polished surfaces.
Description
Quoting of related application:
The application proposes according to united states patent law 35U.S.C. § 111 (a), and require to enjoy provisional application No.60/331,614 the applying date (this provisional application proposes November 20 calendar year 2001 according to united states patent law 35U.S.C. § 111 (b)) according to united states patent law 35U.S.C. § 119 (e) (1).
Technical field:
The present invention relates to a kind of cerium base polishing material that is used for objects such as polished glass, or rather, relate to a kind of cerium base polishing material and a kind of cerium base polishing slurries, it is main component with the cerium oxide, and be used to polish harder glass baseplate relatively, for example those are used for the glass baseplate of hard disk, panel of LCD or Pyrex glass.
Background technology:
Glass material is applied to various occasions at present, and needs in many cases they are carried out surface finish.For example the glass baseplate as optical lens and optical lens requires the surface accuracy height so that specular surface to be provided.Especially, the glass baseplate that is used for CD and disk, and those are used for glass baseplate that the glass baseplate of liquid-crystal display (as thin film transistor (TFT) LCDs and twisted-nematic (TN) LCDs) and those are used for the light shield of the color filter of liquid crystal TV set and large-scale integrated circuit (LSI) and require planeness high and surfaceness is little, and requirement does not have defective.Therefore, the polishing precision of these substrate surfaces must be higher.
LCDs must have high heat resistance with glass baseplate, because they will experience pyroprocess in post-processing stages.Production lightweight LCDs also needs the less base material of thickness.The glass baseplate that is used for disk must satisfy a lot of requirements equally, and thickness is little when for example being used to produce light-end products, and has mechanical property (especially rigidity) disc distortion when eliminating high speed operation.The requirement of this respect is strict year by year.
In order to obtain to have the thin base material of enough mechanical propertys, people have done a lot of improvement to the chemical constitution and the complete processing of glass material, and therefore having developed with the silico-aluminate is the glass baseplate of main component, and is widely used at present in LCDs and the disk.Concerning the glass baseplate that is used for disk, having developed is the crystal glass base material of main component with the lithium silicate, and materials such as crystalloid quartz are also like this.Because workability is poor, common polishing material only just can be polished these glass baseplates under low speed, and its productivity is low.Equally with regard to the disk glass baseplate, must be with high precision and at a high speed these base materials are polished.
With rare earth oxide especially cerium oxide is the surface that the polishing material of main component is widely used in the polished glass base material, because comparable those of the speed of these polishing material polishing substrates contain fast several times of the polishing material of ferric oxide, zirconium white or silicon-dioxide.Usually by the particles dispersed of polishing material is for example used these polishing material in the water in liquid.The shortcoming of cerium oxide base polishing material is that it only just can polish the hard glass base material under low-speed conditions, for example the base material of above introducing.
Although also need to fully understand the accurate mechanism of cerium oxide base polishing material polished glass base material, now by the empirical discovery polishing process coefficient result of mechanical effect that to be cerium oxide provide the hardness of the chemical action of glass and cerium oxide particle.But, respectively with silico-aluminate and lithium silicate be the crystal glass base material of main component and glass baseplate hardly with the pharmaceutical chemicals reaction, therefore more be not vulnerable to the influence of the chemical action of polishing material.In addition, hard glass base material (workpiece) destroys or the particle of the polishing material of crushing easily, therefore is difficult to keep the mechanical effect of polishing material to glass.Process velocity descends rapidly as a result.
For the long term maintenance mechanical effect, can in polishing composition, add the particle of the aluminum oxide harder, zirconium white or other raw material than workpiece.But this has just reduced the relative concentration of cerium oxide particle, and the chemical action of cerium oxide becomes and can't satisfy the demand as a result.In addition, hard particles can cause defective on glass surface (workpiece surface), for example indenture and cut.
The present invention has solved the above-mentioned shortcoming of prior art.Therefore the object of the present invention is to provide a kind of cerium base polishing material.This polishing material is hard especially, and not only can obtain improved surface quality after polishing, and can also keep initial burnishing speed when being used to polish chronically when those are difficult to the hard glass material of high speed polishing with other materials.This polishing material does not for example cause surface imperfection for example indenture and cut on the glass baseplate at workpiece substantially.Another object of the present invention is to provide a kind of cerium base polishing slurries that comprises cerium base polishing material.
Summary of the invention:
Of the present invention a kind of be the cerium base polishing material of main component with the cerium oxide, it is characterized in that when the amount with 10% (quality) is scattered in the water throw out bulk specific gravity of this polishing material is 0.8g/ml to 1.0g/ml.
Above-mentioned cerium base polishing material is characterized in that its basic particle diameter is 40nm to 80nm, and specific surface area is 2m
2/ g to 5m
2/ g.
A kind of cerium base polishing material of the present invention is characterized in that its amount that contains Ce is 35% (quality) or more, calculates with the amount of cerium oxide.
By cerium base polishing material is scattered in preparation cerium base polishing slurries in the dispersion medium with concentration 5% (quality) to 30% (quality).
Cerium base polishing slurries it is characterized in that dispersion medium is water or organic solvent, and organic solvent is at least a for being selected from alcohol, polyvalent alcohol, acetone and the tetrahydrofuran (THF).
Cerium base polishing slurries it is characterized in that it comprises dispersion agent, and dispersion agent is selected from aniorfic surfactant and the nonionic surface active agent at least a.
Cerium base polishing slurries, it is at least a to it is characterized in that aniorfic surfactant is selected from lower molecular weight or high-molecular weight carboxylate salt, sulfonate, vitriol and the phosphoric acid salt, and that nonionic surface active agent is selected from polyxyethylated alkylphenol, Voranol EP 2001 and the polyoxyethylene fatty acid ester is at least a.
The present invention also comprises a kind of method of cerium base polishing slurries polished glass base material and glass baseplate of this method polishing of a kind of usefulness of using.
As previously mentioned, when being that 40nm to 80nm, specific surface area are 2m with basic particle diameter
2/ g to 5m
2When this polishing material of/g is scattered in the water with the amount of 10% (quality), the throw out bulk specific gravity of polishing material is 0.8g/ml to 1.0g/ml, cerium base polishing material that it provided and cerium base polishing slurries can improve polishing velocity and the defective that on glazed surface, causes seldom, and can obtain high-quality glazed surface.
Optimum implementation of the present invention:
Cerium base polishing material of the present invention be characterised in that its with cerium oxide as main component, and when polishing material was scattered in the water with 10% (quality) and precipitates, its throw out bulk specific gravity was 0.8g/ml to 1.0g/ml.
Cerium base polishing material used herein refers to the polishing material of cerium oxide as its main component, and this polishing material can contain the material except cerium oxide, for example La, Nd, Pr or their oxide compound.
Throw out bulk specific gravity used herein refer to when do not contain additive for example the polishing material of dispersion agent be scattered in the liquid and make the proportion of this polishing material of its in when precipitation.Measure the throw out bulk specific gravity in order to following method.
This polishing material of 10g is dispersed in the ion exchanged water.Dispersion liquid is injected the 100ml graduated cylinder, be on the 100ml scale marks until the lower edge of meniscus.Thoroughly dispersed with stirring liquid left standstill it 24 hours then.Measure the volume of powder precipitation thing layer then.Determine the throw out bulk specific gravity with the throw out volume that obtains by following formula.
Throw out bulk specific gravity (g/ml)=10 (g)/throw out volume (ml)
In the present invention, the throw out bulk specific gravity of cerium base polishing material should be 0.8g/ml to 1.0g/ml.If the throw out bulk specific gravity of cerium base polishing material less than 0.8g/ml, can become very low with this polishing material to the speed that the relatively poor hard glass of processing characteristics polishes so, so that can't realize above-mentioned purpose of the present invention.On the contrary, the throw out bulk specific gravity easily makes the surface produce cut in polishing process greater than the cerium base polishing material of 1.0g/ml, thereby also can't realize purpose of the present invention in the case.
The throw out bulk specific gravity of polishing material of the present invention is preferably 0.85g/ml to 0.95g/ml.Can further improve the performance of polishing material like this.
If polishing material, is about to slurry drying, the roasting of being worn into by hamartite in order to the preparation of below method and pulverizes, can control the throw out bulk specific gravity of polishing material so by maturing temperature.Suppose that the particle diameter that grinds the back material is basic identical, maturing temperature is high more so, and the throw out bulk specific gravity is big more; And maturing temperature is low more, and the throw out bulk specific gravity is more little.
Basic particle diameter according to cerium base polishing material of the present invention is preferably 40nm to 80nm, more preferably 50nm to 70nm.
Use following formula (Scherrer formula) to calculate the basic particle diameter of cerium base polishing material of the present invention by the peaked halfwidth at X-ray diffraction peak:
ε＝0.9λ/β
1/2/cosθ
Wherein
ε=basic particle diameter
λ=X-beam wavelength ()
β
1/2The peaked halfwidth (radian) at=X-ray diffraction peak.
To be those pointed out to cerium oxide and appear near 2 θ=28 °-28.4 ° peak at the X-ray diffraction peak that is used for determining the basic particle diameter of cerium base polishing material among the present invention.
If the basic particle diameter of cerium base polishing material of the present invention is less than 40nm, the mechanical polishing performance of this polishing material will descend so, so that polishing velocity can not be satisfied the demand.If the basic particle diameter of cerium base polishing material of the present invention on the contrary is greater than 80nm, the particle of this polishing material becomes the macrocrystal of hard easily so, can produce cut on the surface when polishing.
The specific surface area of cerium base polishing material of the present invention is preferably 2m
2/ g to 10m
2/ g, more preferably 2m
2/ g to 5m
2/ g.Its specific surface area is less than 2m
2/ g easily makes the surface produce cut in polishing process, and specific surface area is greater than 5m
2/ g can cause polishing velocity to reduce.The specific surface area of cerium base polishing material of the present invention is preferably used the BET technical measurement.
According to cerium base polishing material of the present invention with cerium oxide as main component." polishing material with cerium oxide as main component " this saying represents it is that the amount that polishing material contains Ce is 35% (quality) or more, is preferably 45% (quality) or more, calculates with the amount of cerium oxide.If the amount of Ce (amount with cerium oxide is calculated) less than 35% (quality), so almost can't meet the requirements of polishing velocity.Although preferred bigger Ce content (amount with cerium oxide is calculated), the amount of cerium oxide surpasses 70% (quality) back just can not correspondingly improve the performance of polishing material.Therefore the amount of the contained Ce of cerium base polishing material of the present invention is preferably 35% (quality) to 70% (quality) under practical situation, calculates with the amount of cerium oxide.
In order to polish various glass materials and glassy product, comprise glass baseplate as optical lens, CD and disk and LCDs, also preferably use cerium base polishing material of the present invention with form of powder usually with the form of dispersion liquid (slurry).
For example be scattered in dispersion medium for example in the water time when polishing material, use polishing material with slurry form, the concentration that this slurry comprises polishing material is preferably 5-30% (quality), more preferably 10-20% (quality).Except water, be fit to dispersion medium of the present invention and comprise organic solvent, especially water-miscible organic solvent.
The example of water-miscible organic solvent comprises the monohydroxy-alcohol (for example methyl alcohol, ethanol, propyl alcohol, Virahol and butanols) with 1 to 10 carbon atom, polyvalent alcohol (for example pure and mild glyceryl alcohol of ethylene), acetone, methyl-sulphoxide (DMSO), the N with 3 to 10 carbon atoms, dinethylformamide (DMF), tetrahydrofuran (THF) and dioxane.This wherein special preferred alcohols, polyvalent alcohol, acetone and tetrahydrofuran (THF).
In the present invention, preferably in the slurry of cerium base polishing material, add tensio-active agent as dispersion agent.Being fit to tensio-active agent of the present invention can choose wantonly from aniorfic surfactant, cationic surfactant, nonionic surface active agent and amphoterics.These tensio-active agents can independently use, and perhaps adopt wherein two kinds or more of mixtures.This wherein is particularly suitable for have aniorfic surfactant and nonionic surface active agent of the present invention.
Aniorfic surfactant is optional from known carboxylate salt (soap class for example; N-acyl amino hydrochlorate; alkyl ether carboxy acid salt and acylated peptide); sulfonate (sulfonated alkane (comprising alkylbenzene sulfonate) for example; sulfonated alkyl naphathalene; sulfosuccinate; sulfonated and N-acyl group sulfonate); vitriol (oil vitriol for example; alkyl-sulphate; sulfated alkyl ether; alkyl allyl ethers vitriol and alkylamide vitriol); phosphoric acid salt (alkylphosphonic for example; alkyl ether phosphate; alkyl allyl ethers phosphoric acid salt).Aniorfic surfactant not only comprises low-molecular-weight but also comprise the high-molecular weight compound.Salt used herein is selected from the salt that forms with Li, Na, K, Rb, Cs, ammonium and H at least a.
The example of described soap class comprises the soap of C12 to C18.The representative instance of this lipid acid is lauric acid, tetradecanoic acid, palmitinic acid and stearic acid.The example of N-acyl amino hydrochlorate comprises the salt of N-acyl group-N-methyl aminoacetic acid and N-acyl glutamic acid, has 12 to 18 carbon atoms separately.The alkyl ether carboxy acid salt comprises that those have the alkyl ether carboxy acid salt of 6 to 18 carbon atoms, and acylated peptide comprises that those have the acylated peptide of 12 to 18 carbon atoms.
Sulfonate comprises that those have the sulfonate of 6 to 18 carbon atoms.For example sulfonated alkane comprises lauryl sulfonate, dioctyl succinic aldehyde sulfonate (dioctylsuccinesulfonate), benzene sulfonate, dodecylbenzene sulfonate, myristyl sulfonate, allyl benzene sulfonate and stearyl sulfonate.Vitriol comprises that those have the vitriol of 6 to 18 carbon atoms, for example, and alkyl-sulphate such as lauryl sulfate, dioctyl succinic aldehyde vitriol (dioctylsuccinesulfate), myristyl phosphoric acid salt and stearin-based sulfate.Phosphoric acid salt comprises that those have the phosphoric acid salt of 8 to 18 carbon atoms.The example of nonionic surface active agent comprises polyxyethylated alkylphenol, Voranol EP 2001 and polyoxyethylene fatty acid ester.In addition, except aniorfic surfactant above-mentioned and nonionic surface active agent, can also use any known fluorochemical surfactant.
The example of high-molecular weight tensio-active agent comprises special polycarboxylate compound (ProductName: Poiz530 is produced by KAO company).
Except above-mentioned tensio-active agent, the slurry of cerium base polishing material of the present invention can randomly contain additive, for example polymeric dispersant (comprising tri-polyphosphate, phosphoric acid salt (comprising hexametaphosphate), ether of cellulose (comprising methylcellulose gum and carboxymethyl cellulose)), and water-soluble polymers (comprising polyvinyl alcohol).The preferred amount of polishing material relatively of the amount of additive is generally 0.05-20% (quality), more preferably 0.1-10% (quality).
The slurry of cerium base polishing material of the present invention and cerium base polishing material can polish objects such as glass baseplates, and does not produce indenture, cut or other surface imperfection, therefore can provide high-quality glazed surface.It also allows for a long time high speed polishing constantly.
Though can use any known technology and production unit to prepare cerium base polishing material of the present invention, can prepare this polishing material very effectively according to following working condition.
Adopt hamartite or other material that is rich in cerium oxide as raw material.Raw material is milled to particle, and particle diameter is controlled in 1.6 μ m to 2.0 μ m, with the mouth pipe test particle diameter of 30 μ m on the Coulter particle-size analyzer.When using rotary kiln, preferably about 2 hours of 1000 ℃ to 1100 ℃ following roasting raw materials.
Though understand the present invention in detail below with reference to embodiment, these embodiment are used for limiting the scope of the invention anything but.
Embodiment 1:
The hamartite #4010 that adopts Molycorp company (U.S.) preparation is as raw material.In ball mill 1kg raw material and 1 premium on currency being worn into median size (D50) is the powder of 1.8 μ m, and powder is made slurry.
Composed as follows by the hamartite #4010 of Molycorp company (U.S.) preparation:
CeO
235% (quality)
La
2O
324% (quality)
Nd
2O
38% (quality)
Pr
6O
113% (quality)
F 6% (quality)
The total amount 68-73% of rare earth oxide (quality)
Soak loss (1000 ℃) 20% (quality)
In 1000 ℃ of down dry, these slurries of roasting 2 hours, obtain cerium base polishing material of the present invention with electric furnace with its cooling, pulverizing and according to magnitude classification.The cerium base polishing material of Huo Deing contains the cerium of 45% (quality) like this, calculates with the amount of cerium oxide.
Median size (D50) is corresponding to the particle diameter of the 50th percentage point of representative in the polishing material particulate volume distributed median, with the mouth pipe test particle diameter of the last 30 μ m of Coulter particle-size analyzer (manufacturing of Beckman Coulter company).
The cerium base polishing material of gained is scattered in the water, and forming polishing material concentration is the polishing slurries of 10% (quality).Use this polishing slurries that the non-alkali glass sheet that is used for thin-film transistor display panel is polished, and the quality of finish of each sheet glass is made an appraisal.Polishing condition is as follows:
(polishing condition)
Polishing machine: 4 type Twp-sided polishing machines
The non-alkali glass sheet of workpiece: 5 * 5cm, the surface-area of each sheet is 25cm
2
Polished sheet number: 3/criticize * 2 times
The liner of polishing usefulness: polyurethane foam pad (LP-77, Rhodes makes)
Base plate rotating speed: 90rpm
The input speed of slurry: 60ml/min
Working pressure: 156g/cm
2
Polishing time: 30min
Use 6 of micrometer tests to be used for the thickness of four differences on the every sheet glass of non-alkali glass of TFT panel, get the mean value of 4 point * 6 slice and determine polishing velocity (μ m/min).(200,000lux) as light source, the range estimation glass surface is also counted each lip-deep cut number with halogen lamp.In addition, test the center line average roughness of the glass surface of each sheet glass with the Talystep thickness gauge of Taylor Hobson company.
Simultaneously, 10g cerium base polishing material is scattered in the ion exchanged water.Dispersion liquid is injected the 100ml graduated cylinder, be on the 100ml scale marks until the lower edge of meniscus.Thoroughly dispersed with stirring liquid left standstill it 24 hours then.The volume of test powders throw out layer, and definite throw out bulk specific gravity then.
The result is presented in the table 1 together with the median size (D50) of character, polishing material, specific surface area, polishing velocity and the throw out bulk specific gravity of BET technical measurement.
Embodiment 2:
Make cerium base polishing material with the method identical with embodiment 1, different is with raw material wet-milling to median size is 1.6 μ m.
Identical with the method for embodiment 1, with the cerium base polishing material polished glass sheet of gained, and the quality of finish of each sheet glass made an appraisal.The result is presented in the table 1.
The comparative example 1:
Make cerium base polishing material with the method identical with embodiment 1, different is at 800 ℃ of following roasting slurries with electric furnace.
Identical with the method for embodiment 1, with the cerium base polishing material polished glass sheet of gained, and the quality of finish of each sheet glass made an appraisal.Table 1 has shown the character of polishing material, and table 2 has shown polish results.
The comparative example 2:
Make cerium base polishing material with the method identical with embodiment 1, different is at 1200 ℃ of following roasting slurries with electric furnace.
Identical with the method for embodiment 1, with the cerium base polishing material polished glass sheet of gained, and the quality of finish of each sheet glass made an appraisal.Table 1 has shown the character of polishing material, and table 2 has shown polish results.
As can be seen from Table 2, in embodiment 1 and 2, realized high polishing velocity and not on surface, do not form cut as the non-alkali glass sheet of workpiece.Therefore proved that embodiment 1 and 2 cerium oxide base polishing material separately can provide high-quality glazed surface effectively.
By comparison, because the throw out bulk specific gravity of polishing material is little, the polishing velocity among the comparative example 1 is low.
On the contrary, the throw out bulk specific gravity is excessive causes the polishing velocity among the comparative example 2 to descend.In addition, formed cut and surfaceness is excessive on glazed surface, this has caused low-quality glazed surface.
In addition, cerium base polishing slurries of the present invention also can show its polishing effect for a long time.
Table 1
| The character of polishing material | ||||
| Median size (μ m) | Throw out bulk specific gravity (g/ml) | Basic particle diameter (nm) | Specific surface area (m 2/g) | |
| Embodiment 1 | 1.86 | 0.87 | 60 | 2.8 |
| Embodiment 2 | 1.55 | 0.91 | 70 | 2.3 |
| The comparative example 1 | 1.78 | 0.75 | 30 | 5.5 |
| The comparative example 2 | 2.19 | 1.05 | 110 | 1.6 |
Table 2
| Polishing performance | ||||||
| Polishing beginning back 30min | Polishing beginning back 240min | |||||
| Polishing velocity (μ m/min) | Cut number (each surface) | Surfaceness sRa () | Polishing velocity (μ m/min) | Cut number (each surface) | Surfaceness sRa () | |
| Embodiment 1 | 2.35 | 0.17 | 12 | 2.28 | 0.08 | 11 |
| Embodiment 2 | 2.29 | 0.08 | 10 | 2.06 | 0.17 | 9 |
| The comparative example 1 | 1.99 | 0.08 | 9 | 1.18 | 0.08 | 8 |
| The comparative example 2 | 1.69 | 1.50 | 15 | 0.94 | 1.08 | 13 |
Industrial usability:
As previously mentioned, use cerium base polishing material according to the present invention can improve polishing speed. Simultaneously the lip-deep cut of polishing workpiece seldom, surface roughness is little. Therefore guaranteed high-quality polishing surface. In addition, cerium base polishing material of the present invention can provide high polishing speed chronically, thereby has improved polishing efficiency.
Claims (14)
1. one kind is the cerium base polishing material of main component with the cerium oxide, it is characterized in that when the amount with 10 quality % is scattered in the water throw out bulk specific gravity of this polishing material is 0.8g/ml to 1.0g/ml, and the specific surface area of polishing material is 2m
2/ g to 5m
2/ g.
2. according to the cerium base polishing material of claim 1, be characterised in that its basic particle diameter is 40nm to 80nm.
3. according to the cerium base polishing material of claim 1, be characterised in that its amount that contains Ce is 35 quality % or more, calculate with the amount of cerium oxide.
4. according to the cerium base polishing material of claim 2, be characterised in that its amount that contains Ce is 35 quality % or more, calculate with the amount of cerium oxide.
5. cerium base polishing slurries, it makes by being scattered in the dispersion medium with concentration 5 quality % to 30 quality % according to each cerium base polishing material in the claim 1 to 4.
6. according to the cerium base polishing slurries of claim 5, be characterised in that dispersion medium is a water.
7. according to the cerium base polishing slurries of claim 5, be characterised in that dispersion medium is an organic solvent.
8. according to the cerium base polishing slurries of claim 7, be characterised in that organic solvent comprise be selected from alcohol, acetone and the tetrahydrofuran (THF) at least a.
9. according to the cerium base polishing slurries of claim 7, be characterised in that organic solvent comprises polyvalent alcohol.
10. according to each cerium base polishing slurries in the claim 5 to 9, be characterised in that it comprises tensio-active agent.
11. according to the cerium base polishing slurries of claim 10, it is at least a to be characterised in that tensio-active agent is selected from aniorfic surfactant and the nonionic surface active agent.
12. according to the cerium base polishing slurries of claim 11, it is at least a to be characterised in that aniorfic surfactant is selected from lower molecular weight or high-molecular weight carboxylate salt, sulfonate, vitriol and the phosphoric acid salt.
13. according to the cerium base polishing slurries of claim 11, it is at least a to be characterised in that nonionic surface active agent is selected from polyxyethylated alkylphenol, Voranol EP 2001 and the polyoxyethylene fatty acid ester.
14. a use is according to the method for each cerium base polishing slurries polished glass base material in the claim 5 to 13.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001350968 | 2001-11-16 | ||
| JP350968/2001 | 2001-11-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1520449A CN1520449A (en) | 2004-08-11 |
| CN1289626C true CN1289626C (en) | 2006-12-13 |
Family
ID=34308251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02811936 Expired - Lifetime CN1289626C (en) | 2001-11-16 | 2002-11-15 | Cerium-based polish and cerium-based polish slurry |
Country Status (5)
| Country | Link |
|---|---|
| CN (1) | CN1289626C (en) |
| AT (1) | ATE495229T1 (en) |
| DE (1) | DE60238935D1 (en) |
| MY (1) | MY136167A (en) |
| TW (1) | TWI276607B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101648360B (en) * | 2008-08-15 | 2011-05-18 | 广东科达机电股份有限公司 | Ceramic tile polishing method |
| CN103917332A (en) * | 2011-11-01 | 2014-07-09 | 旭硝子株式会社 | Method for producing glass substrate |
| CN106479374A (en) * | 2016-10-28 | 2017-03-08 | 扬州翠佛堂珠宝有限公司 | A kind of jasper polishing fluid |
| CN110639693A (en) * | 2019-10-22 | 2020-01-03 | 中国恩菲工程技术有限公司 | System and method for extracting bastnaesite pure minerals |
-
2002
- 2002-11-15 DE DE60238935T patent/DE60238935D1/en not_active Expired - Lifetime
- 2002-11-15 TW TW91133539A patent/TWI276607B/en not_active IP Right Cessation
- 2002-11-15 CN CN 02811936 patent/CN1289626C/en not_active Expired - Lifetime
- 2002-11-15 MY MYPI20024279 patent/MY136167A/en unknown
- 2002-11-15 AT AT02785937T patent/ATE495229T1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE60238935D1 (en) | 2011-02-24 |
| MY136167A (en) | 2008-08-29 |
| TW200300404A (en) | 2003-06-01 |
| ATE495229T1 (en) | 2011-01-15 |
| CN1520449A (en) | 2004-08-11 |
| TWI276607B (en) | 2007-03-21 |
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