CN1286266C - Elestic surface wave device and modulation method of its temp. characteristic - Google Patents
Elestic surface wave device and modulation method of its temp. characteristic Download PDFInfo
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- CN1286266C CN1286266C CN 200310101519 CN200310101519A CN1286266C CN 1286266 C CN1286266 C CN 1286266C CN 200310101519 CN200310101519 CN 200310101519 CN 200310101519 A CN200310101519 A CN 200310101519A CN 1286266 C CN1286266 C CN 1286266C
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Abstract
To miniaturize a surface acoustic wave device wherein a plurality of surface acoustic wave elements are connected in parallel relationship and arranged on the same substrate, and to make temperature characteristic superior in wide temperature range. A plurality of surface acoustic wave elements are arranged so that the respective propagation directions [psi] are different from each other on a main surface of a quartz plate cut out with Euler angles of (0[deg.], 113-135[deg.], +-(40-49[deg.])). When Euler angle is set to (0[deg.], [theta], [psi]), difference of propagation directions can be made small by setting the respective propagation angles [psi] to be within the range of 0.3295[theta]+3.3318[deg.]+-1.125[deg.]. As a result, angle which the surface acoustic wave elements make becomes small, and miniaturization of the surface acoustic wave device is attained.
Description
Technical field
The present invention relates to the elastic surface wave device, particularly relate to elastic surface wave device and the temperature characterisitic method of adjustment using quartz plate, make the change minimizing of frequency relative temperature.
Background technology
Patent documentation 1: the spy opens clear 53-145595 communique
Patent documentation 2: special public clear 63-18892 communique
Non-patent literature 1: dustpan is taken turns ten literal, " centre frequency and the temperature characterisitic (crystal slab The い elastic surface wave sub-prime center cycle と そ temperature characterisitic) thereof of the acoustic surface wave element of quartz plate have been used ", letter is learned the skill newspaper, electronic intelligence Communications Society of civic organization, in July, 1976, Vol.76, No.78, p.9-16, US76-23
Known in the past have IDT is set on the first type surface of piezoelectrics flat board that with the quartz plate is representative (Interdigital Transducer: the electrode interdigitation converter) makes the elastic surface wave device of stably vibrating at high frequency band.And, in above-mentioned elastic surface wave device, to reduce change that the frequency relative temperature changes is that the elastic surface wave device of purpose has: the quartz plate of the dull and stereotyped ST of the use cutting of piezoelectrics, as the elastic surface direction of wave travel, a kind of of excitation elastic surface wave is the elastic surface wave device of the ST cutting of R wave with the X-direction (electricity direction of principal axis) of the quartz plate of this ST cutting.
In order further to reduce the change that the frequency relative temperature changes, a plurality of acoustic surface wave elements of configuration on the quartz plate of ST cutting often make the elastic surface direction of wave travel that obtains from each acoustic surface wave element different; Also configuration ID T electrode often makes the thickness of electrode of IDT electrode different (for example patent documentation 1).
Also have following way in addition: the quartz plate that makes the ST cutting is around the rotation of Z ' axle, this around Z ' axle do the quartz plate that the ST of rotation face in cuts (below, the quartz plate that is called rotation ST cutting in the face) goes up acoustic surface wave element of configuration (below, be called the elastic surface wave device of rotation ST cutting in the face) (for example patent documentation 2).
Yet, the variation of the relative direction of propagation of summit temperature (providing the temperature of frequency extreme value) of the elastic surface wave device's of ST cutting temperature characterisitic (characteristic of the change that the frequency relative temperature changes) is less, even the direction of propagation changes 10 degree, the summit variation of temperature is also at (reference example such as non-patent literature 1) below 20 ℃.Therefore, when making a plurality of acoustic surface wave elements be configured on the quartz plate of same ST cutting, must increase the angle of each acoustic surface wave element.Particularly increase the number of the acoustic surface wave element that is disposed, when the change of the frequency in the wide temperature range is reduced, have to increase acoustic surface wave element that provides the minimum vertex temperature and the angle that provides the acoustic surface wave element of maximum vertex temperature.Therefore, make the mutually different elastic surface wave device of elastic surface direction of wave travel that a plurality of acoustic surface wave elements are configured on the quartz plate of same ST cutting, obtain from each acoustic surface wave element have the problem of miniaturization difficulty.In addition, along with becoming high frequency, also there is following problem in the IDT electrode of tilted configuration.
The IDT electrode is used photomask usually and is formed its figure.The straight line of the inclination in this photomask forms by short lines being arranged in stair-stepping straight line group.Along with becoming high frequency, in the IDT of graph thinning electrode, no longer can ignore the ladder state that is arranged in this stair-stepping straight line group, the IDT electrode of tilted configuration no longer can be regarded smoothly (electrode width of IDT electrode is constant) as.And, when the IDT electrode is unsmooth, tend to take place unwanted vibration, thereby can become bad reason.
On the other hand, on the quartz plate of same ST cutting, during the mutually different a plurality of acoustic surface wave element of the thickness of electrode of configuration ID T electrode, the IDT electrode can be disposed abreast.But existence must form a plurality of thickness of electrode on same quartz plate, makes the manufacturing process complicated such problem that becomes.
The elastic surface wave device of rotation ST cutting compares with the elastic surface wave device of ST cutting in the face, and its temperature characterisitic is fabulous.But, the temperature characterisitic that obtains from an acoustic surface wave element, when having expanded the serviceability temperature scope, have frequency variation increase, the so inadequately problem of precision.
Summary of the invention
The objective of the invention is to: at above-mentioned existing problem, provide a kind of in wide temperature range the good mini elastic surface wave device of temperature characterisitic.In addition, the present invention also aims to provide a kind of elastic surface wave device's temperature characterisitic method of adjustment.
Elastic surface wave device of the present invention is a kind of elastic surface wave device, it is configured to: configuration is used to encourage a plurality of n of being acoustic surface wave element M1～Mn that at least one pair of IDT electrode of R wave forms with relation connection parallel with one another on the first type surface of the quartz plate that cuts out with Eulerian angles (0 degree, 113～135 degree, ± (40～49 degree)), have at least a plurality of above-mentioned directions of propagation different among the elastic surface direction of wave travel Ψ 1～Ψ n that obtains respectively from this acoustic surface wave element M1～Mn, it is characterized in that:
When above-mentioned Eulerian angles were (0 degree, θ, Ψ), above-mentioned direction of propagation Ψ 1～Ψ n existed
In the scope of Ψ 1～Ψ n=0.3295 θ+3.3318 degree ± 1.125 degree.
According to said structure, has following effect: can make the summit variations in temperature and do not make above-mentioned direction of propagation Ψ 1～Ψ n that big difference is arranged each other.
In addition, elastic surface wave device of the present invention is a kind of elastic surface wave device, it is configured to: configuration is used to encourage a plurality of n of being acoustic surface wave element M1～Mn that at least one pair of IDT electrode of R wave forms with relation connection parallel with one another on the first type surface of the quartz plate that cuts out with Eulerian angles (0 degree, 113～135 degree, ± (40～49 degree)), have at least a plurality of above-mentioned electrode width/electrode spacings different among the electrode width/electrode spacing η 1～η n that obtains respectively from the above-mentioned IDT electrode of above-mentioned acoustic surface wave element M1～Mn, it is characterized in that:
When above-mentioned Eulerian angles were (0 degree, θ, Ψ), Ψ existed
In the scope of Ψ=0.3295 θ+3.3318 degree ± 1.125 degree.
According to said structure, has following effect: in wide temperature range, can have good temperature characterisitic, can dispose above-mentioned IDT electrode abreast.
In addition, elastic surface wave device of the present invention is a kind of elastic surface wave device, it is configured to: with Eulerian angles (0 the degree, 113～135 degree, ± (40～49 degree)) configuration is used to encourage a plurality of n of being acoustic surface wave element M1～Mn that at least one pair of IDT electrode of R wave forms with relation connection parallel with one another on the first type surface of the quartz plate that cuts out, have at least a plurality of above-mentioned electrode width/electrode spacings different among the electrode width/electrode spacing η 1～η n that obtains respectively from the above-mentioned IDT electrode of above-mentioned acoustic surface wave element M1～Mn, and, it also is configured to: have at least a plurality of above-mentioned directions of propagation different among the elastic surface direction of wave travel Ψ 1～Ψ n that obtains respectively from this acoustic surface wave element M1～Mn, it is characterized in that:
When above-mentioned Eulerian angles were (0 degree, θ, Ψ), above-mentioned direction of propagation Ψ 1～Ψ n existed
In the scope of Ψ 1～Ψ n=0.3295 θ+3.3318 degree ± 1.125 degree.
According to said structure, has following effect: can make the summit variations in temperature and do not make above-mentioned direction of propagation Ψ 1～Ψ n big difference be arranged each other, simultaneously in wide temperature range, can have good temperature characterisitic.
In addition, elastic surface wave device of the present invention is characterised in that: have at least a temperature to be in beyond the serviceability temperature scope among the summit temperature Tp 1～Tpn of the temperature characterisitic that obtains respectively from above-mentioned acoustic surface wave element M1～Mn.
According to said structure, following effect is arranged:, in the serviceability temperature scope, also can have good temperature characterisitic even when the summit temperature Tp 1～Tpn of the temperature characterisitic that obtains respectively from above-mentioned acoustic surface wave element M1～Mn because of the error on making departs from desirable value.
In addition, a kind of elastic surface wave device's temperature characterisitic method of adjustment, with Eulerian angles (0 the degree, 113～135 degree, ± (40～49 degree)) a plurality of n of being the acoustic surface wave element M1～Mn that configuration is used to encourage at least one pair of IDT electrode of R wave to form on the first type surface of the quartz plate that cuts out, above-mentioned acoustic surface wave element M1～Mn connects with relation parallel with one another, have at least a plurality of above-mentioned directions of propagation different among being arranged such that the elastic surface direction of wave travel Ψ 1～Ψ n that obtains respectively from above-mentioned acoustic surface wave element M1～Mn, it is characterized in that: above-mentioned Eulerian angles are (0 degree, θ, in the time of Ψ), above-mentioned direction of propagation Ψ 1～Ψ n is adjusted in the scope of Ψ 1～Ψ n=0.3295 θ+3.3318 degree ± 1.125 degree.
In addition, a kind of elastic surface wave device's temperature characterisitic method of adjustment, with Eulerian angles (0 the degree, 113～135 degree, ± (40～49 degree)) a plurality of n of being the acoustic surface wave element M1～Mn that configuration is used to encourage at least one pair of IDT electrode of R wave to form on the first type surface of the quartz plate that cuts out, above-mentioned acoustic surface wave element M1～Mn connects with relation parallel with one another, have at least a plurality of above-mentioned electrode width/electrode spacings different among being arranged such that the electrode width/electrode spacing η 1～η n that obtains respectively from the above-mentioned IDT electrode of above-mentioned acoustic surface wave element M1～Mn, it is characterized in that: above-mentioned Eulerian angles are (0 degree, θ, in the time of Ψ), Ψ is adjusted in the scope of Ψ=0.3295 θ+3.3318 degree ± 1.125 degree.
In addition, a kind of elastic surface wave device's temperature characterisitic method of adjustment, with Eulerian angles (0 the degree, 113～135 degree, ± (40～49 degree)) a plurality of n of being the acoustic surface wave element M1～Mn that configuration is used to encourage at least one pair of IDT electrode of R wave to form on the first type surface of the quartz plate that cuts out, above-mentioned acoustic surface wave element M1～Mn connects with relation parallel with one another, have at least a plurality of above-mentioned electrode width/electrode spacings different among being arranged such that the electrode width/electrode spacing η 1～η n that obtains respectively from the above-mentioned IDT electrode of above-mentioned acoustic surface wave element M1～Mn, have at least a plurality of above-mentioned directions of propagation different among the elastic surface direction of wave travel Ψ 1～Ψ n that obtains respectively from above-mentioned acoustic surface wave element M1～Mn, it is characterized in that: above-mentioned Eulerian angles are (0 degree, θ, in the time of Ψ), above-mentioned direction of propagation Ψ 1～Ψ n is adjusted in the scope of Ψ 1～Ψ n=0.3295 θ+3.3318 degree ± 1.125 degree.
Description of drawings
Fig. 1 is the key diagram of the cutting angle of quartz.
Fig. 2 is the temperature characteristics figure with extreme value.
Fig. 3 is illustrated in the curve chart that can easily see the scope of the temperature characteristics with extreme value in the quartz plate of rotation ST cutting in the face that Eulerian angles are in (0 degree, 113～135 degree, ± (40～49 degree)).
Fig. 4 is using Eulerian angles to be in to verify in the resonator type SAW device of the quartz plate of rotation ST cutting in the face of (0 degree, 113～135 degree, ± (40～49 degree)) 3 functions to have or not the curve chart of extreme value.
Fig. 5 is using Eulerian angles to be in to verify in the resonator type SAW device of the quartz plate of rotation ST cutting in the face of (0 degree, 113～135 degree, ± (40～49 degree)) 3 functions to have or not the curve chart of extreme value.
Fig. 6 is using Eulerian angles to be in to verify in the resonator type SAW device of the quartz plate of rotation ST cutting in the face of (0 degree, 113～135 degree, ± (40～49 degree)) 3 functions to have or not the curve chart of extreme value.
Fig. 7 is using Eulerian angles to be in to verify in the resonator type SAW device of the quartz plate of rotation ST cutting in the face of (0 degree, 113～135 degree, ± (40～49 degree)) 3 functions to have or not the curve chart of extreme value.
Fig. 8 is using Eulerian angles to be in to verify in the resonator type SAW device of the quartz plate of rotation ST cutting in the face of (0 degree, 113～135 degree, ± (40～49 degree)) 3 functions to have or not the curve chart of extreme value.
Fig. 9 is using Eulerian angles to be in to verify in the lateral type SAW filter of the quartz plate of rotation ST cutting in the face of (0 degree, 113～135 degree, ± (40～49 degree)) 3 functions to have or not the curve chart of extreme value.
Figure 10 is using Eulerian angles to be in to verify in the lateral type SAW filter of the quartz plate of rotation ST cutting in the face of (0 degree, 113～135 degree, ± (40～49 degree)) 3 functions to have or not the curve chart of extreme value.
Figure 11 is using Eulerian angles to be in to verify in the lateral type SAW filter of the quartz plate of rotation ST cutting in the face of (0 degree, 113～135 degree, ± (40～49 degree)) 3 functions to have or not the curve chart of extreme value.
Figure 12 is using Eulerian angles to be in to verify in the lateral type SAW filter of the quartz plate of rotation ST cutting in the face of (0 degree, 113～135 degree, ± (40～49 degree)) 3 functions to have or not the curve chart of extreme value.
Figure 13 is the curve chart that elastic surface wave device's that Eulerian angles are cut for rotation ST in the elastic surface wave device's of the ST cutting of (0 degree, 123 degree, 0 degree) temperature characteristics and the face temperature characteristics compares.
Figure 14 illustrates Eulerian angles to be the η of (0 degree, 123 degree, 43.2 are spent) among (0 degree, 123 degree, 0 degree) and the embodiment, H/ λ=0.03 o'clock and the graph of a relation of summit temperature.
Figure 15 is the figure that the elastic surface wave device's of rotation ST cutting the 1st embodiment in of the present invention is shown.
Figure 16 is the figure that the elastic surface wave device's of rotation ST cutting the 3rd embodiment in of the present invention is shown.
Figure 17 is the figure that the elastic surface wave device's of rotation ST cutting the 5th embodiment in of the present invention is shown.
Figure 18 is the figure that the temperature characterisitic among elastic surface wave device's the embodiment of rotation ST cutting is shown in of the present invention.
Figure 19 is the figure that the elastic surface wave device's of rotation ST cutting the 2nd embodiment in of the present invention is shown.
Figure 20 is the figure that the elastic surface wave device's of rotation ST cutting the 4th embodiment in of the present invention is shown.
Figure 21 is the figure that the elastic surface wave device's of rotation ST cutting the 6th embodiment in of the present invention is shown.
Figure 22 is the figure that the temperature characterisitic among elastic surface wave device's the embodiment of rotation ST cutting is shown in of the present invention.
Figure 23 is the figure that the temperature characterisitic among elastic surface wave device's the embodiment of rotation ST cutting is shown in of the present invention.
Figure 24 is the figure that the temperature characterisitic among elastic surface wave device's the embodiment of rotation ST cutting is shown in of the present invention.
Figure 25 is the key diagram of electrode width/electrode spacing, H/ λ, is the profile of acoustic surface wave element.
To be Eulerian angles that embodiment is shown be the Ψ of (0 degree, 123 degree, Ψ), H/ λ=0.03 and 0.04, η=0.5 o'clock and the graph of a relation of summit temperature to Figure 26.
Figure 27 is the figure that the elastic surface wave device's of rotation ST cutting the 1st embodiment in of the present invention is shown.
Embodiment
Below, with reference to description of drawings the present invention.Have, embodiment shown below does not do any qualification to the content of the invention described in claims again.In addition, the necessary structure in the solution of the invention described in claims not necessarily of all structures shown in the following embodiment.
Below, the embodiment 1 that the present invention has been specialized is described with reference to the accompanying drawings.
Fig. 1 is the key diagram of the cutting angle of quartz.Change with cut direction in temperature characterisitic when quartz cuts out piezoelectric oscillator as can be known.As shown in Figure 1, quartzy crystallographic axis is by electricity axle (X-axis), mechanical axis (Y-axis), optical axis (Z axle) definition, but so-called ST cutting is meant following cutting: the quartz plate 1 of the ST cutting that Eulerian angles (φ, θ, Ψ) are obtained around electricity axle (X-axis) rotation θ=113～135 degree for the quartz plate 2 of (0 degree, 0 degree, 0 degree) cuts out along new reference axis (X, Y ', Z ').And then, around Z ' the axle rotation Ψ of the quartz plate 1 of this ST cutting=± (40～49) degree, make the elastic surface direction of wave travel become this direction and the piezo-electric resonator made is exactly the elastic surface wave device 3 of rotation ST cutting in so-called.And the elastic surface wave device's 3 of rotation ST cutting temperature characterisitic is splendid in known this, because this temperature characterisitic is a kind of of ST cutting, thinks once that it was the temperature characterisitic of 2 functions.But the inventor has carried out research back and has found, in fact it is that the flex point of temperature characterisitic is positioned near 3 function temperature characterisitics 110 ℃.Owing to usually do not measuring temperature characterisitic in far away surpassing under 110 ℃ the temperature, thus in the face that has used the quartz plate 9 of rotation ST cutting in the face unconfirmed the elastic surface wave device's 3 of rotation ST cutting temperature characterisitic be exactly 3 functions.
Fig. 2 illustrates the temperature characteristics figure with extreme value.The flex point of the elastic surface wave device's 3 of rotation ST cutting temperature characterisitic is about 110 ℃ in face, for example when taking the serviceability temperature scope, use the zone that among the temperature characteristics of 3 functions, has the maximum (Tp) that is arranged in the temperature province lower (part of surrounding with rectangle at Fig. 2) than flex point than its low temperature province-40～85 ℃.
Fig. 3 is illustrated in the quartz plate 9 of rotation ST cutting in the face that Eulerian angles are in (0 degree, 113～135 degree, ± (40～49 degree)), can see the curve chart of the scope of the temperature characteristics with extreme value easily.
The inventor has carried out various researchs back repeatedly and has found, in the scope of this curve chart of the temperature characterisitic with 3 functions, the elastic surface wave device that can see lateral type easily has the θ of temperature characteristics of extreme value (maximum value or minimum value) and the scope of Ψ in-40～85 ℃ temperature range.With the shadow part in this curve chart 5 this scope is shown.
On the other hand, in the elastic surface wave device of resonator type, shadow part 4 in this curve chart can see easily that exactly temperature characteristics is to have among the scope of the θ of temperature characteristics of extreme value (maximum value or minimum value) and Ψ, be in the scope beyond the scope of shadow part 5 in the said temperature scope, compare with the zone of the part shade 5 that forms electrode, the Ψ value reduces.And, the following formula definition in total zone of shadow part 4 in this curve chart and shadow part 5.
(formula 1)
Ψ=0.3295 θ+3.3318 degree ± 1.125 degree
And, with in shadow part 4 and the zone shown in the shadow part 5,, can see the have extreme value frequency-temperature characteristic curve of (maximum value or minimum value) easily by carrying out rotating face in around Z ' axle.
The inventor carries out the checking of temperature characterisitic at the juncture area of above-mentioned shadow part 4 and shadow part 5, respectively the above-mentioned shadow part 4 and the correctness of the scope of shadow part 5 is confirmed.
In addition, in the present embodiment, the elastic surface wave device 3 of rotation ST cutting is defined as comprising SAW filter resonator type SAW device (comprising SAW resonator, the resonator SAW filer) both sides of lateral type in the so-called face.
Fig. 9～Figure 12 is using Eulerian angles to be in to verify in the lateral type SAW filter of the quartz plate 9 of rotation ST cutting in the face of (0 degree, 113～135 degree, ± (40～49 degree)) 3 functions to have or not the curve chart of extreme value.
From these graph discoveries can see lateral type SAW filter easily the elastic surface wave device in-40～85 ℃ temperature range, have the θ of temperature characterisitic of extreme value (maximum value or minimum value) and the scope of Ψ.This scope is the shadow part 5 of Fig. 3, uses following formula definition.
(formula 2)
Ψ=0.3295 θ+3.8318 degree ± 0.625 degree
, the inventor is not the temperature characterisitic that only rests on lateral type SAW filter, has also studied the temperature characterisitic of resonator type SAW device repeatedly, has found various systematicness.That is, lateral type SAW filter is following form: on the surface as the quartz base plate of piezoelectric, with certain arranged spaced the IDT electrode (comb electrodes) of transmitter side and the IDT electrode of receiver side are arranged.Owing in such SAW filter, do not form anything between the IDT electrode, key elements such as the width of electrode, thickness are to the variable effect very little (even change the shape of electrode, temperature characterisitic also not too changes) of the temperature characterisitic of frequency.In contrast, at resonator type SAW device is following form: form the IDT electrode and form reflector electrode with the state that clips this IDT electrode on as the surface of the quartz base plate of piezoelectric, temperature characterisitic changes along with key element such as the width of this IDT electrode, thickness.
Fig. 4 is using Eulerian angles to be in the resonator type SAW device of the quartz plate 9 that rotation ST cuts in the face of (0 degree, 123 degree, ± (40～49 degree)), temperature characterisitic for 3 functions, checking has or not the curve chart of extreme value in-40～85 ℃ temperature range, the ratio of electrode thickness H and elastic surface wave wavelength X (below, represent with H/ λ) be 0.03.Have, the profile that the electrode thickness H of IDT electrode, elastic surface wave wavelength X are shown in acoustic surface wave element is promptly among Figure 25 again.As shown in Figure 4, the scope of the shadow part 4 from Fig. 3 reduces under the condition of face internal rotation angle Ψ, and temperature characterisitic does not have extreme value in-40～85 ℃ temperature range as can be known.In addition, increase under the condition of face internal rotation angle Ψ, extreme value is arranged as can be known from the scope of the shadow part 4 of Fig. 3.For example, in the curve chart of Fig. 4, under the situation of Ψ=44 degree, extreme value is arranged at about-30 degree places.The situation of this Ψ=44 degree is included in the shadow part 5.
Fig. 4 and Figure 10 show, even the θ among the Eulerian angles (0 degree, θ, Ψ) is identical, but according to the having or not of electrode, the Ψ that provides similar temperature characteristics is also inequality.For example, if observe the Ψ that becomes the border with extreme value, then in Figure 10, Ψ=43.7 are spent, and in contrast, in Fig. 4, Ψ=42.7 degree is than the former little 1 degree.That is,, only in the scope of the Ψ that the shadow part 5 with Fig. 3 defines, be not easy to see the temperature characterisitic that in-40～85 ℃ temperature range, has extreme value (maximum value or minimum value) because there is electrode to exist.Therefore, if definition expands to than with the total scope of the scope of little 1 degree of Ψ of the scope of the shadow part 5 of Fig. 3 (Here it is shadow part 4) with shadow part 5, then no matter have electrodelessly, all can see the temperature characterisitic that in-40～85 ℃ temperature range, has extreme value (maximum value or minimum value) easily.So shadow part 4 defines with formula 1 with the total scope of shadow part 5.
The temperature characterisitic of Eulerian angles for the resonator type SAW device of (0 degree, 117 degree, Ψ), (0 degree, 129 degree, Ψ), (0 degree, 135 degree, Ψ) has been shown in Fig. 5～Fig. 8.From these figure as can be known, only in the scope of the Ψ that the shadow part 5 with Fig. 3 defines, be not easy to see the temperature characterisitic that in-40～85 ℃ temperature range, has extreme value (maximum value or minimum value), if but in the total scope of shadow part 4 and shadow part 5, then can see the temperature characterisitic that in-40～85 ℃ temperature range, has extreme value (maximum value or minimum value) easily.
Figure 13 shows in the scope of the Eulerian angles of formula 1 and extreme value to be set near the temperature characteristics of the elastic surface wave device 3 of rotation ST cutting in the face of room temperature and the Eulerian angles temperature characteristics for the elastic surface wave device of the ST cutting of (0 degree, 123 degree, 0 degree).As shown in the drawing,, compare can obtain the having extreme value easily good temperature characterisitic of (maximum value or minimum value) by being set at the scope of formula 1 described Eulerian angles with the elastic surface wave device of ST cutting.
Figure 15 is the figure that the elastic surface wave device's 3 of rotation ST cutting embodiment 1 in of the present invention is shown.In the face elastic surface wave device 3 of rotation ST cutting with the quartz plate 9 of rotation ST cutting in the face as basal substrate.Then, configuration 2 acoustic surface wave element M1, M2 on the first type surface of the quartz plate 9 of rotation ST cutting in above-mentioned make that the elastic surface direction of wave travel Ψ 1, the Ψ 2 that obtain from each acoustic surface wave element are different.And, on above-mentioned 2 acoustic surface wave element M1, M2, be provided with IDT electrode 6.The electric terminal 7,8 that is used to apply high-frequency electric field is connected to these IDT electrodes 6.Above-mentioned electric terminal 7,8 is not limited to terminal position shown in Figure 15.For example, in position shown in Figure 27, electric terminal 7,8 also can be connected on the IDT electrode 6.Also be same among the embodiment 2～6 that will address in the back.
Figure 26 shows among the elastic surface wave device 3 of rotation ST cutting in the face of present embodiment, an example of the propagation angle of the elastic surface wave in the scope of above-mentioned Eulerian angles and the relation of summit temperature.
For example, in Figure 15, with the electrical connection in parallel of 2 acoustic surface wave elements of H/ λ=0.03, and as shown in figure 18, by each summit temperature being decided to be about 50 ℃ and about 10 ℃, when in wide temperature range, expecting good temperature characterisitic, as can be seen from Figure 26, the propagation angle of 2 acoustic surface wave element M1, M2 is set at (0 degree, 123 degree, 43 degree) respectively, (0 degree, 123 degree, 43.4 degree) get final product.That is, the angle of 2 acoustic surface wave element M1, M2 is very little, and is little of 0.4 degree.
Like this, in the scope of the Eulerian angles of formula 1, can change the summit temperature of temperature characterisitic by change propagation direction only.That is, can reduce to be configured in the angle of 2 acoustic surface wave element M1, M2 on the quartz plate 9 that cuts with one side inward turning commentaries on classics ST.
Figure 24 has disposed on the quartz plate 9 of rotation ST cutting in face in the temperature characterisitic of the elastic surface wave device 3 of rotation ST cutting in the face of 2 acoustic surface wave element M1, M2, show with respect to 0～60 ℃ of the serviceability temperature scope of this situation, the summit temperature is the curve chart of the situation of 10 ℃ and 50 ℃.For example, when occurring making each summit temperature to become the trend of low value, as can be seen from Figure 26, little than predetermined angle by the angle that 2 acoustic surface wave element M1, M2 are configured on the quartz plate 9 that rotation ST cuts in the face because of manufacturing process, can improve each summit temperature, be set as suitable value.In addition, for example big than predetermined angle when the serviceability temperature scope in Figure 24 changes to high temperature one side by the angle that 2 acoustic surface wave element M1, M2 are configured on the quartz plate 9 that rotation ST cuts in the face, can be easy to carry out correspondence.
That is, even make the summit temperature Tp 1 of above-mentioned 2 acoustic surface wave element M1, M2 temperature characterisitic separately, when Tp2 departs from desirable value, also can in the serviceability temperature scope, obtain good temperature characterisitic because of manufacturing process.In addition, even when change serviceability temperature scope, also can be easy to the good temperature range of changing temperature characteristic.
According to the 1st embodiment, can obtain following effect.
(1) in face on the quartz plate 9 of rotation ST cutting, different by acoustic surface wave element being configured to the elastic surface direction of wave travel, can reduce the angle of acoustic surface wave element.Thereby, can make elastic surface wave device's 3 miniaturizations of rotation ST cutting in the face that has disposed acoustic surface wave element.
(2) for the skew of the temperature characterisitic that causes because of foozle and manufacturing process, the change of serviceability temperature scope, also can be easy to handle.
(3) in wide temperature range, can obtain good temperature characterisitic.
Then, the embodiment 2 that the present invention has been specialized is described with reference to the accompanying drawings.
Figure 19 is the figure that the elastic surface wave device's 3 of rotation ST cutting embodiment 2 in of the present invention is shown.Dispose 3 acoustic surface wave element M1～M3 on the first type surface of the quartz plate 9 of rotation ST cutting in face, this point is different with embodiment 1.In addition, it is different that above-mentioned 3 acoustic surface wave element M1～M3 are configured to elastic surface direction of wave travel Ψ 1～Ψ 3 of obtaining from each acoustic surface wave element.
In Figure 19, with 3 acoustic surface wave element M1～M3 of H/ λ=0.03 electrical connection in parallel.At this moment, as shown in figure 22, spending, making an appointment with-10 degree by each summit temperature being set at about 70 degree, about 30, when in wide temperature range more, obtaining good temperature characterisitic, as can be seen from Figure 26, the propagation angle with 3 acoustic surface wave element M1～M3 is set at (0 degree, 123 degree, 42.8 degree), (0 degree, 123 degree, 43.2 degree) respectively, (0 degree, 123 degree, 43.6 degree) get final product.That is, the acoustic surface wave element that provides the minimum vertex temperature can reduce to very little with the angle that provides the acoustic surface wave element of maximum vertex temperature, and is little of 0.8 degree.
Like this, in the scope of the Eulerian angles of formula 1, can change the summit temperature of temperature characterisitic by change propagation direction a little.That is, can reduce to be configured in the angle of a plurality of acoustic surface wave element M1～Mn on the quartz plate 9 that cuts with one side inward turning commentaries on classics ST.
Figure 23 shows in the temperature characterisitic of the elastic surface wave device 3 of rotation ST cutting in the face that has disposed 3 acoustic surface wave element M1～M3 on the quartz plate 9 that rotation ST cuts in face, the curve chart of the situation of the maximum of summit temperature beyond the serviceability temperature scope.Because with respect at this moment serviceability temperature scope-20 ℃～60 ℃, the maximum of summit temperature is 70 ℃, even descend 20 ℃, to the maximum and the also almost not influence of minimum value of the frequency departure in the serviceability temperature scope because of the error on making for example makes each summit temperature.Consequently, even when making the summit temperature Tp 1～Tp3 of the temperature characterisitic separately of above-mentioned acoustic surface wave element M1～M3 depart from desirable value, also can obtain the good temperature characterisitic in the serviceability temperature scope because of the error on making.
That is,, also can in the serviceability temperature scope, obtain good temperature characterisitic even when making the summit temperature Tp 1～Tpn of the temperature characterisitic separately of above-mentioned acoustic surface wave element M1～Mn depart from desirable value because of manufacturing process.And then, even when change serviceability temperature scope, also can be easy to the good temperature range of changing temperature characteristic.
As above being described in detail,, except effect (1)～(2) that obtain the foregoing description 1 equally, also can obtain following effect according to present embodiment.
(4) according to present embodiment, can in wideer serviceability temperature scope, obtain good temperature characterisitic, be easy to handle the more change of wide region simultaneously.
Then, the embodiment 3 that the present invention has been specialized is described with reference to the accompanying drawings.
Figure 16 is the figure that the elastic surface wave device's 3 of rotation ST cutting embodiment 3 in of the present invention is shown.In face, 2 acoustic surface wave element M1, M2 have been disposed on the first type surface of the quartz plate 9 of rotation ST cutting.Above-mentioned 2 acoustic surface wave element M1, M2 are configured to be mutual identical direction from the elastic surface direction of wave travel that they obtain, different with embodiment 1～2 in this.
Figure 25 is the profile of 2 acoustic surface wave element M1, M2.Configuration ID T electrode 6 on the first type surface of the quartz plate 9 of rotation ST cutting in face, this figure shows electrode width t, the electrode spacing p of IDT electrode 6 respectively.Electrode width/electrode spacing η 1, the η 2 (η=electrode width/electrode spacing) of the IDT electrode that obtains from above-mentioned 2 acoustic surface wave element M1, M2 are different, also different with embodiment 1～2 in this.
In present embodiment 3, show identical and the example that electrode width t is different of electrode spacing p, but also can electrode spacing p difference and electrode width t is identical.In addition, electrode spacing p also can be different with electrode width t.
Figure 14 shows in the face of present embodiment 3 among the elastic surface wave device 3 of rotation ST cutting, and the electrode width/electrode spacing η of the IDT electrode in the scope of the Eulerian angles of formula 1 be an example of the relation of the elastic surface wave device's that cuts of the ST of (0 degree, 123 degree, 0 are spent) the electrode width/electrode spacing η of IDT electrode and summit temperature with an example and the Eulerian angles of the relation of summit temperature.As shown in the drawing, the elastic surface wave device 3 of rotation ST cutting compares with the elastic surface wave device of ST cutting in the face, and the summit variation of temperature that causes because of electrode width/electrode spacing η is bigger.That is, the elastic surface wave device 3 of rotation ST cutting can set the summit temperature in the face in wideer temperature range.Thus, can be easy in wideer temperature range, obtain good temperature characterisitic.
For example, in Figure 16, with the electrical connection in parallel of 2 acoustic surface wave elements of H/ λ=0.03, and as shown in figure 18, by each summit temperature being set at about 50 ℃ and about 10 ℃, when obtaining good temperature characterisitic in wide temperature range, η 1, the η 2 that can try to achieve the IDT electrode of 2 acoustic surface wave element M1, M2 from the curve of Figure 14 are respectively about 0.4, about 0.55.
Like this, in the scope of the Eulerian angles of formula 1, being configured in the one side inward turning by 2 acoustic surface wave element M1, M2 that η is different changes on the quartz plate 9 of ST cutting, can realize with an acoustic surface wave element temperature characterisitic that can't realize, good.In addition, can make the IDT electrode of the acoustic surface wave element that is disposed not have obliquely configuration abreast, thus, can be implemented in the miniaturization of the elastic surface wave device 3 of rotation ST cutting in the face that has disposed acoustic surface wave element M1, M2 on the quartz plate 9 that rotation ST cuts in the face.
Figure 24 has disposed on the quartz plate 9 of rotation ST cutting in face in the temperature characterisitic of the elastic surface wave device 3 of rotation ST cutting in the face of 2 acoustic surface wave element M1, M2, show with respect to 0～60 ℃ of the serviceability temperature scope of this situation, the summit temperature is the curve chart of the situation of 10 ℃ and 50 ℃.In addition, Figure 26 shows among the elastic surface wave device 3 of rotation ST cutting in the face of present embodiment, an example of the relation of Ψ and summit temperature in the scope of the Eulerian angles of formula 1.
For example, according to manufacturing process, when each summit temperature has the trend that becomes low value in Figure 24, as can be seen from Figure 26, angle by configuration 2 acoustic surface wave element M1, M2 on the quartz plate 9 that makes rotation ST cutting in face is littler than predetermined angle, can improve each summit temperature, be set at suitable value.In addition, for example, when the serviceability temperature scope in Figure 24 changed to high temperature one side, similarly also the angle by configuration 2 acoustic surface wave element M1, M2 on the quartz plate 9 that makes rotation ST cutting in face was bigger than predetermined angle, can be easy to carry out correspondence.
That is, even make the summit temperature Tp 1 of the temperature characterisitic separately of above-mentioned 2 acoustic surface wave element M1, M2, when Tp2 departs from desirable value, also can in the serviceability temperature scope, obtain good temperature characterisitic because of manufacturing process.And then, even when change serviceability temperature scope, also can be easy to the good temperature range of changing temperature characteristic.
As above being described in detail,, except effect (1)～(3) that similarly obtain the foregoing description 1, also can obtain following effect according to present embodiment.
(5) the IDT electrode owing to the acoustic surface wave element that is disposed can dispose abreast, thus further miniaturization.
Embodiment 4
Then, the embodiment 4 that the present invention has been specialized is described with reference to the accompanying drawings.
Figure 20 is the figure that the elastic surface wave device's 3 of rotation ST cutting embodiment 4 in of the present invention is shown.In face, 3 acoustic surface wave element M1～M3 have been disposed on the first type surface of the quartz plate 9 of rotation ST cutting.Above-mentioned 3 acoustic surface wave element M1～M3 are configured to be mutual identical direction from the elastic surface direction of wave travel that they obtain.In addition, the electrode width/electrode spacing η 1～η 3 (η=electrode width/electrode spacing) of the IDT electrode that obtains from above-mentioned 3 acoustic surface wave element M1～M3 is different, different with embodiment 1～3 in this.
In Figure 20, with 3 acoustic surface wave element M1～M3 of H/ λ=0.03 electrical connection in parallel, and as shown in figure 22, summit temperature by will be separately is decided to be about 70 ℃, about 30 ℃ of peace treaties-10 ℃, when in wideer temperature range, obtaining good temperature characterisitic, as can be seen from Figure 14, the η 1～η 3 of the IDT electrode of 3 acoustic surface wave elements is respectively 0.325,0.475,0.625 and gets final product.
Like this, in the scope of the Eulerian angles of formula 1, be configured on the quartz plate 9 that cuts with one side inward turning commentaries on classics ST by 3 acoustic surface wave elements that η is different, can realize with an acoustic surface wave element temperature characterisitic that can't realize, good, can make the IDT electrode of 3 acoustic surface wave elements that disposed not have obliquely configuration abreast simultaneously.
That is, be configured on the quartz plate 9 that cuts with one side inward turning commentaries on classics ST, can realize more good temperature characterisitic by a plurality of acoustic surface wave element M1～Mn that η is different.In addition, the IDT electrode of a plurality of acoustic surface wave element M1～Mn of being disposed can there be obliquely configuration abreast.
Figure 23 shows in the temperature characterisitic of the elastic surface wave device 3 of rotation ST cutting in the face that has disposed 3 acoustic surface wave element M1～M3 on the quartz plate 9 that rotation ST cuts in face, the curve chart of the situation of the maximum of summit temperature beyond the serviceability temperature scope.Because with respect to the serviceability temperature scope-20 of this situation ℃～60 ℃, the maximum of summit temperature is 70 ℃, even so descend 20 ℃, to the maximum and the also almost not influence of minimum value of the frequency departure in the serviceability temperature scope because of the error on making for example makes each summit temperature.That is,, also can in the serviceability temperature scope, obtain good temperature characterisitic even when making the summit temperature Tp 1～Tpn of the temperature characterisitic separately of a plurality of acoustic surface wave element M1～Mn depart from desirable value because of the error on making.
As above being described in detail,, can obtain effect (1), (2), (4), (5) in the foregoing description 1～3 equally according to present embodiment.
Then, the embodiment 5 that the present invention has been specialized is described with reference to the accompanying drawings.
Figure 17 is the figure that the elastic surface wave device's 3 of rotation ST cutting embodiment 5 in of the present invention is shown.In face on the first type surface of the quartz plate 9 of rotation ST cutting, it is different that 2 acoustic surface wave element M1, M2 are configured to the elastic surface direction of wave travel Ψ 1, the Ψ 2 that obtain from each acoustic surface wave element.In addition, electrode width/electrode spacing η 1, the η 2 (η=electrode width/electrode spacing) of the IDT electrode 6 that obtains from above-mentioned 2 acoustic surface wave element M1, M2 are different, different with embodiment 1～4 in this.
Shown in the curve of Figure 26, in the scope of the Eulerian angles of formula 1, can change the summit temperature of temperature characterisitic by change propagation direction a little.That is, can reduce to be configured in the angle of 2 acoustic surface wave element M1, M2 on the quartz plate 9 that cuts with one side inward turning commentaries on classics ST.
In addition, shown in the curve of Figure 14, in the scope of the Eulerian angles of formula 1, being configured in the one side inward turning by 2 acoustic surface wave element M1, M2 that η is different changes on the quartz plate 9 of ST cutting, can realize with an acoustic surface wave element temperature characterisitic that can't realize, good.In addition, the angle of the IDT electrode of the acoustic surface wave element that disposed can be disposed abreast.
In the present embodiment, direction of propagation Ψ by making above-mentioned acoustic surface wave element is different with the η (η=electrode width/electrode spacing) of IDT electrode 6, can further reduce the angle of 2 acoustic surface wave element M1, M2, and needn't make the η (η=electrode width/electrode spacing) of IDT electrode 6 increase or reduce to change the summit temperature terrifically.Particularly, when going into to reduce,, then be easy to take place the short circuit that causes because of foreign matter if η is big terrifically along with entering high frequency.On the other hand, if η is terrifically little, then electrode becomes and breaks easily.Present embodiment has the effect that these defectives are reduced.
As above being described in detail,, except effect (1)～(3) that can obtain the foregoing description 1 equally, also can obtain following effect according to present embodiment.
(6) according to present embodiment, along with becoming the high frequency frequency, must reduce electrode width, electrode spacing, but defective such as the short circuit of the IDT electrode 6 that can reduce under this situation to be taken place or broken string.
Then, the embodiment 6 that the present invention has been specialized is described with reference to the accompanying drawings.
Figure 21 is the figure that the elastic surface wave device's 3 of rotation ST cutting embodiment 6 in of the present invention is shown.In face, 3 acoustic surface wave element M1～M3 have been disposed on the first type surface of the quartz plate 9 of rotation ST cutting.It is different that above-mentioned 3 acoustic surface wave element M1～M3 are configured to elastic surface direction of wave travel Ψ 1～Ψ 3 of obtaining from them.In addition, it is different, different with embodiment 1～5 in this that above-mentioned acoustic surface wave element M1～M3 is configured to the electrode width/electrode spacing η 1～η 3 (η=electrode width/electrode spacing) of the IDT electrode that obtains from them.
In the present embodiment, direction of propagation Ψ by making above-mentioned acoustic surface wave element is different with the η (η=electrode width/electrode spacing) of IDT electrode 6, can further reduce the angle of 3 acoustic surface wave element M1～M3, and needn't make the η (η=electrode width/electrode spacing) of IDT electrode 6 increase or reduce to change the summit temperature terrifically.That is, can reduce the angle of a plurality of acoustic surface wave element M1～Mn, and needn't make the electrode width/electrode spacing η (η=electrode width/electrode spacing) of a plurality of IDT electrodes 6 increase or reduce to change the summit temperature terrifically.
As above being described in detail,, can obtain effect (1), (2), (4), (6) in the foregoing description 1,2,5 equally according to present embodiment.
Claims (8)
1. elastic surface wave device, it is configured to: configuration is used to encourage a plurality of n of being acoustic surface wave element M1～Mn that at least one pair of IDT electrode of R wave forms with relation connection parallel with one another on the first type surface of the quartz plate that cuts out with Eulerian angles (0 degree, 113～135 degree, ± (40～49 degree)), have at least a plurality of above-mentioned directions of propagation different among the elastic surface direction of wave travel Ψ 1～Ψ n that obtains respectively from this acoustic surface wave element M1～Mn, it is characterized in that:
When above-mentioned Eulerian angles were (0 degree, θ, Ψ), above-mentioned direction of propagation Ψ 1～Ψ n existed
In the scope of Ψ 1～Ψ n=0.3295 θ+3.3318 degree ± 1.125 degree.
2. elastic surface wave device, it is configured to: configuration is used to encourage a plurality of n of being acoustic surface wave element M1～Mn that at least one pair of IDT electrode of R wave forms with relation connection parallel with one another on the first type surface of the quartz plate that cuts out with Eulerian angles (0 degree, 113～135 degree, ± (40～49 degree)), have at least a plurality of above-mentioned electrode width/electrode spacings different among the electrode width/electrode spacing η 1～η n that obtains respectively from the above-mentioned IDT electrode of above-mentioned acoustic surface wave element M1～Mn, it is characterized in that:
When above-mentioned Eulerian angles were (0 degree, θ, Ψ), Ψ existed
In the scope of Ψ=0.3295 θ+3.3318 degree ± 1.125 degree.
3. elastic surface wave device, it is configured to: with Eulerian angles (0 the degree, 113～135 degree, ± (40～49 degree)) configuration is used to encourage a plurality of n of being acoustic surface wave element M1～Mn that at least one pair of IDT electrode of R wave forms with relation connection parallel with one another on the first type surface of the quartz plate that cuts out, have at least a plurality of above-mentioned electrode width/electrode spacings different among the electrode width/electrode spacing η 1～η n that obtains respectively from the above-mentioned IDT electrode of above-mentioned acoustic surface wave element M1～Mn, and, it also is configured to: have at least a plurality of above-mentioned directions of propagation different among the elastic surface direction of wave travel Ψ 1～Ψ n that obtains respectively from this acoustic surface wave element M1～Mn, it is characterized in that:
When above-mentioned Eulerian angles were (0 degree, θ, Ψ), above-mentioned direction of propagation Ψ 1～Ψ n existed
In the scope of Ψ 1～Ψ n=0.3295 θ+3.3318 degree ± 1.125 degree.
4. the elastic surface wave device described in each of claim 1～3 is characterized in that:
Have at least a temperature to be in beyond the serviceability temperature scope among the summit temperature Tp 1～Tpn of the temperature characterisitic that obtains respectively from above-mentioned acoustic surface wave element M1～Mn.
5. an elastic surface wave device temperature characterisitic method of adjustment,
Configuration is used to encourage a plurality of n of being the acoustic surface wave element M1～Mn that at least one pair of IDT electrode of R wave forms on the first type surface of the quartz plate that cuts out with Eulerian angles (0 degree, 113～135 degree, ± (40～49 degree)), above-mentioned acoustic surface wave element M1～Mn connects with relation parallel with one another, have at least a plurality of above-mentioned directions of propagation different among being arranged such that the elastic surface direction of wave travel Ψ 1～Ψ n that obtains respectively from above-mentioned acoustic surface wave element M1～Mn, it is characterized in that:
When above-mentioned Eulerian angles are (0 degree, θ, Ψ), above-mentioned direction of propagation Ψ 1～Ψ n is adjusted at
In the scope of Ψ 1～Ψ n=0.3295 θ+3.3318 degree ± 1.125 degree.
6. an elastic surface wave device temperature characterisitic method of adjustment,
Configuration is used to encourage a plurality of n of being the acoustic surface wave element M1～Mn that at least one pair of IDT electrode of R wave forms on the first type surface of the quartz plate that cuts out with Eulerian angles (0 degree, 113～135 degree, ± (40～49 degree)), above-mentioned acoustic surface wave element M1～Mn connects with relation parallel with one another, have at least a plurality of above-mentioned electrode width/electrode spacings different among being arranged such that the electrode width/electrode spacing η 1～η n that obtains respectively from the above-mentioned IDT electrode of above-mentioned acoustic surface wave element M1～Mn, it is characterized in that:
When above-mentioned Eulerian angles are (0 degree, θ, Ψ), Ψ is adjusted at
In the scope of Ψ=0.3295 θ+3.3318 degree ± 1.125 degree.
7. an elastic surface wave device temperature characterisitic method of adjustment,
With Eulerian angles (0 the degree, 113～135 degree, ± (40～49 degree)) a plurality of n of being the acoustic surface wave element M1～Mn that configuration is used to encourage at least one pair of IDT electrode of R wave to form on the first type surface of the quartz plate that cuts out, above-mentioned acoustic surface wave element M1～Mn connects with relation parallel with one another, have at least a plurality of above-mentioned electrode width/electrode spacings different among being arranged such that the electrode width/electrode spacing η 1～η n that obtains respectively from the above-mentioned IDT electrode of above-mentioned acoustic surface wave element M1～Mn, have at least a plurality of above-mentioned directions of propagation different among the elastic surface direction of wave travel Ψ 1～Ψ n that obtains respectively from above-mentioned acoustic surface wave element M1～Mn, it is characterized in that:
When above-mentioned Eulerian angles are (0 degree, θ, Ψ), above-mentioned direction of propagation Ψ 1～Ψ n is adjusted at
In the scope of Ψ 1～Ψ n=0.3295 θ+3.3318 degree ± 1.125 degree.
8. the temperature characterisitic method of adjustment described in each of claim 5～7 is characterized in that:
Have at least a temperature to be in beyond the serviceability temperature scope among the summit temperature Tp 1～Tpn of the temperature characterisitic that obtains respectively from above-mentioned acoustic surface wave element M1～Mn.
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| JP2002292375 | 2002-10-04 | ||
| JP292375/2002 | 2002-10-04 | ||
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| CN101729035B (en) * | 2008-10-24 | 2011-09-14 | 中国科学院微电子研究所 | Surface acoustic wave correlator manufacturing method based on micro electro mechanical technology |
| JP2012060420A (en) * | 2010-09-09 | 2012-03-22 | Seiko Epson Corp | Surface acoustic wave device, electronic apparatus and sensor device |
| EP2773040B1 (en) * | 2011-10-24 | 2017-10-04 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device |
| CN103178803B (en) * | 2013-02-05 | 2016-04-13 | 长安大学 | Positive-even polygon Rayleigh wave generation device |
| CN105393455B (en) * | 2013-06-28 | 2017-04-12 | 大河晶振科技有限公司 | Elastic wave device |
| CN106225948A (en) * | 2016-07-27 | 2016-12-14 | 电子科技大学 | A kind of double SAW Temperature Sensors and method for designing thereof |
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