CN1281584A - Self-gettering electron field emitter and fabrication process - Google Patents
Self-gettering electron field emitter and fabrication process Download PDFInfo
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- CN1281584A CN1281584A CN98812141A CN98812141A CN1281584A CN 1281584 A CN1281584 A CN 1281584A CN 98812141 A CN98812141 A CN 98812141A CN 98812141 A CN98812141 A CN 98812141A CN 1281584 A CN1281584 A CN 1281584A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/94—Selection of substances for gas fillings; Means for obtaining or maintaining the desired pressure within the tube, e.g. by gettering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/30423—Microengineered edge emitters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
Abstract
A self-gettering electron field emitter (30) has a first portion (40) formed of a low-work-function material for emitting electrons, and it has an integral second portion (50) that acts both as a low-resistance electrical conductor and as a gettering surface. The self-geterring emitter (30) is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance geterring material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-geterring emitter (30) is particularly suitable for use in lateral field emission devices (10). The preferred emitter structure has a tapered edge (60), with a salient portion (45) of the low-work-function material extending a small distance beyond an edge (55) of the gettering and low resistance material. A fabrication process (S1-S6) is specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices.
Description
Technical field
The present invention relates generally to utilize the manufacture method of the microelectronic component and this device of field emission, particularly have manufacturing from the electron field emission body structure of air-breathing performance.
Background technology
As being used for the electron field emission array of field-emitter display etc., challenging urgency problem to be solved provides and can prevent the contaminated gettering material of electron emitter effectively in Production Example.Generally in field-emitter display, gettering material is positioned over the outer edge of whole array.Because the width and the length of typical displays can be tens centimetres,, thereby gettering material too far is set so that can not absorbs catabolite or degased material (outgassed species) effectively generally at 50 to 200 microns the order of magnitude only in the emitter of each unit and the distance between the anode from many emitters of array.The result can pollute emitter, causes that work function changes, and causes the thorough inefficacy of field emission array.Symbol and nomenclature
In this manual, term " nitrogenize " is when being used to metal, and for example " tantalum nitride " or " molybdenum nitride " not only refers to such as TaN, Ta
2N, MoN or Mo
2The stoichiometry nitrogen compound of N and so on, but also the metal of non-stoichiometric nitrogenize is divided in the finger, promptly metal is added many nitrogen, forms the needed amount of stoechiometric compound although need not to be.For example, the chemical formula of this material usually is written as MoN
xOr Ta
xN.Known various nitrogen amounts can be introduced in the metallic film in this area, for example inject by reactive sputtering or ion, to produce the compound of non-stoichiometric nitrogenize.
In this manual, term " laterally " refers generally to the parallel substrate that forms electronic device thereon of direction.Therefore, " laterally field emission device " refers to be formed on the substrate and be formed with such structure so that the field emission device that anode separates with field emitter on the direction that is parallel to substrate at least.Similarly, term " emitted transverse body " refers to be arranged essentially parallel to the field emitter of transversal device substrate, thereby generally is parallel to the electronics emission of substrate generation towards anode.In correlation technique, disclosed the example of this emitted transverse body that forms by film.
Although having limited term " air-breathing ", some authority refers to remove residual gas and the gas that in the device processing procedure, produces or other pollution, and represent to remove gas or other pollution that during device lifetime, produces with term " maintenance ", but in this specification and the appended claims, term " air-breathing " will comprise the application that all are such.Term " pollution " will comprise that any of emitter emitting electrons that may influence from electron field emission device do not want or undesirable material.This pollution may be atom, molecule, cluster, ion, free root etc.Common possible molecular contamination for example comprises O
2, H
2, SO
2, N
2, NH
3, CO
2, CO, H
2O, C
2H
2, C
2H
4, CH
4, SF
6And CCI
2F
2
Correlation technique
The structure of many field emission devices is known, and wherein great majority have a structure that is generally the Spindt type, as described in United States Patent (USP) 3755704 for example.Following United States Patent (USP) has been described various field emission devices and/or its method of manufacturing technology with horizontal field emitter: people's such as Cronin 5233263 and 5308439; People's such as Xie 5528099; With 5616061,5618216,5628663,5630741,5644188,5644190,5647998,5666019,5669802,5700176 and 5703380 of Potter.It is for many years known to use asepwirator pump to remove environmental gas.In recent years, utilize the whole bag of tricks and device that air-breathing technology is used for field emission device, contaminated to prevent the electronics emission tip.
People's such as Todokoro United States Patent (USP) 4041316 has disclosed the field emission electron gun with evaporation source, and the evaporating materials that evaporates from evaporation source forms evaporation layer at the inner surface and the anode surface of vacuum chamber.Thereby the reacting gas that suppresses to adhere to and be embedded on vacuum chamber inner surface and the anode is not drawn out because of electron bombard.
People's such as Longo United States Patent (USP) 5063323 has disclosed a kind of structure, and this structure is provided for discharging the passage of degased material.At electric operating period of field emission device d/d degased material in the field emitter tip of point and the space between the electrode structure, be discharged into the gettering material pump that in the space that separates, disposes by passage.
Thereby people's such as Nakayama United States Patent (USP) 5223766 has disclosed because of the thin-type image display device spare of electron beam irradiation from fluorophor emission light displayed image.This device has the minus plate between the plate and backboard in front, in the mode that has the space between minus plate and backboard this minus plate is set.The through hole that is used for spreading getter is formed on minus plate keeping image quality at the display screen center, or supports minus plate keeping required pressure with getter, thereby even also can obtain higher image quality on the large scale display screen.Gate electrode can be made of gettering material in this device.
People's such as Wallace United States Patent (USP) 5453659 and 5520563 has disclosed the positive plate that uses in the field-emission plane display with all-in-one-piece gettering material.This positive plate comprises the transparent planar substrate of the parallel strip with a plurality of conductions, and this parallel strip comprises the anode of device.Use the fluorophor cover strip, in the gap of bar, gettering material is arranged.Gettering material is zirconium-vanadium-iron or barium preferably.
People's such as Bell United States Patent (USP) 5498925 has disclosed the panel display apparatus of first and second electrodes that comprise separated by spaces, for example have between two electrodes with electrode in the layers of solid material of a composition that contacts.This patterned layer (being called " net ") comprises a plurality of apertures, has at least one aperture relevant with given pixel.Some second materials are set in aperture, are fluorophor under the situation of FPFED for example, or are filter material under the situation of LCD.Net can comprise getter or hygroscopic material.
People's such as Moyer United States Patent (USP) 5502348 has disclosed trajectory (ballistic) the charge migration device with whole active pollution absorption device.Ballistic charge migration device comprises edge electron emitters, limits the central opening that enlarges by it, has receiving terminal (for example anode) and has getter at the other end at this opening one end.Between emitter and receiving terminal, apply suitable current potential so that electrons emitted is attracted to receiving terminal, and between emitter and getter, apply different suitable potential, so that quicken for example pollution such as ion and other undesirable particle towards getter, absorbed by getter then.
People's such as Wiemann United States Patent (USP) 5545946 has disclosed and has been included in the field-emitter display that insulating barrier and emission layer are set on the panel.Vacuum chamber is arranged between backboard and the emission layer and comprises getter.Be defined for the aperture that passes to vacuum chamber from panel with polluting by insulating barrier and emission layer.
People's such as Peng United States Patent (USP) 5578900 has disclosed the field-emitter display with built-in ionic pump of removing degased material.The ionic pump cathode electrode covering grid electrode that forms by gettering material, thus during display operation, collect degased material at ionic pump cathode electrode place.On the other hand, the ionic pump negative electrode can be formed on the focusing electrode, on the focus mask or on other electrode structure.
People's such as Levine United States Patent (USP) 5606225 has disclosed the tetrode structure that is used for colored field-emission plane display that has blocking electrode on positive plate.This positive plate comprises transparent planar substrate, has the transparent conductive material layer that comprises the anode that shows tetrode on this substrate.On anode, form the barrier structure that is preferably opaque material that comprises electric insulation, as the ridge of series of parallel.On the top of each barrier structure a series of buss of reflecting electrode effect.Bus forms three series, so that each the 3rd by electrical interconnection.Deflecting electrode can be formed by the electric conducting material with pumping property as zirconium-vanadium-iron and so on.
People's such as Kato United States Patent (USP) 5610478 has disclosed the conduction emitter of setting field-emitter display to improve the electronics method for transmitting.Under the voltage of emitter emitting electrons, operate emitter and row in excitation.Anode is operated so that electronics attracted under the voltage that gets on of row not attracting electronics.
People's such as Wallace United States Patent (USP) 5614785 has disclosed the positive plate of the flat-panel monitor with silicon getter agent.This display comprises the transparent substrates with a plurality of isolated conductive regions, and this conductive region forms anode and covered by luminescent material.The porous silicon gettering material is deposited on the substrate between the positive plate conductive region.The gettering material of porous silicon is preferably non-conductive, opaque and porous.
People's such as Itoh United States Patent (USP) 5635795 has disclosed the air-breathing chamber of flat-panel monitor.Fluorescent display device comprises hermetic enclosure, has cathode substrate, anode substrate, the seal member of the fluorescence coating that is set to provide luminous demonstration, the air-breathing chamber that is formed on the aspirating hole of shell one side and is communicated with the hole are arranged.Air-breathing chamber is arranged on housing exterior and comprises chamber body and exhaust tube.Air-breathing chamber has been eliminated damage and the pollution that forms aspirating hole separately and prevent cathode substrate thus in cathode substrate.
People's such as Niiyama United States Patent (USP) 5656889 has disclosed the getter device that can activate as required again and be arranged in the space narrow in the shell.In the shell of electronic component, arrange getter by laminated form,, be used to keep the vacuum of enclosure in shell so that membranaceous getter to be provided.Bombard at the enterprising line activating of getter from electronic feeds part electrons emitted.Like this, the several field emission devices in the background technology all comprise relevant with the vacuum chamber wall inner surface or relevant with anode, grid or the reflecting electrode of device gettering material.
The problem that the disclosure of an invention invention will solve
Many pollutant sources that may influence electron field emission body performance are arranged, be included in device make in the degasification of material therefor, Electron Excitation decomposition, Electron Excitation desorb, the residual gas during the device manufacturing in the used vacuum system and penetrate into gas in the field emitter surrounding environment.The invention provides a kind of improved device, be used to prevent that the electron field emission body is contaminated, thereby prevent the change of not expecting of electron field emission body work function, otherwise will cause the abnormal work of field emission device or this device array.Objects and advantages of the present invention
Main purpose of the present invention is the change of not expecting that prevents that the electron field emission body is contaminated and prevent the field emitter work function thus.Like this, total target is more reliable electron field emission device.Therefore, an object of the present invention is near the electron field emission body, especially remove potential contaminant atoms, molecule and ion near space that vacuumizes the field emitter emission tip or the environmental gas.A concrete purpose provides self-gettering electron field emitter.Similarly purpose provides and electron field emission body all-in-one-piece gettering material.Relevant target is the getter that can have the negative potential identical with emitter automatically, and this getter is used to improve the attraction of cation and absorption and is used to avoid absorbate to be subjected to the desorb of Electron Excitation.Another related objective is from air-breathing emitter, and wherein radiating portion comprises the material of nitrogenize form, and this material constitutes air-breathing part.Another target is to make the technology of the microelectronic component with self-gettering electron field emitter.Relevant target is the manufacturing process that formation itself that be particularly suitable for self-gettering electron field emitter is suitable for making the microelectronics field emission device simultaneously.Utilize the present invention can realize these and other objects, will become clearer according to reading this specification and the appended claims these and other objects in conjunction with the accompanying drawings.Brief overview of the present invention
Self-gettering electron field emitter has the first that is formed by the low-work-function material that is used for emitting electrons, and has as the low resistance electric conductor with as the all-in-one-piece second portion of getter surface.By the film of the setting low-work-function material parallel and the film of low resistance gettering material parallel with substrate and that contact with the low-work-function material film, form from air-breathing emitter with substrate.Be specially adapted to horizontal field emission device from air-breathing emitter.Preferred projectile configuration has tapered edge, and this edge has the ledge that extends the low-work-function material of a bit of distance above air-breathing and low electrical resistant material edge.Also disclosed and itself be particularly suitable for forming the manufacturing process of self-gettering electron field emitter and the manufacturing process of making the microelectronics field emission device.
Brief description of drawings
Fig. 1 represents the sectional side view according to the electron field emission device of the present invention's preparation.
Fig. 2 is the sectional side view of the electron field emission body details of presentation graphs 1.
Fig. 3 is a flow chart of showing the preferred production process step.
Fig. 4 a-4e represents the sectional side view by each the stage a series of electron field emission devices of selection process during it is made.
Fig. 5 represents the sectional side view of another embodiment of electron field emission device.The definition of used reference symbol in the accompanying drawing
According to below the part in detailed description of preferred embodiment will know used reference number among accompanying drawing 1,2, the 4a-4e and 5, wherein do not need to limit these reference numbers by its meaning.Following reference symbol is used for flow chart Fig. 3 to represent following process steps:
S1 provides substrate
S2 deposit anode layer
The S3 deposition insulating layer
S4 and substrate abreast the deposit all-in-one-piece from air-breathing emission layer
The radiating portion of S4a deposit emission layer
The air-breathing part of S4b deposit emission layer
S5 is deposit second insulating barrier selectively
S6 directly corrodes opening and forms emission edge
The pattern that carries out an invention
The following detailed description of Yue Duing at first is the detailed description of preferred embodiment according to the electron field emission device of the present invention's preparation with reference to the accompanying drawings.It after the explanation of relevant device the detailed description of preferred production process method.Device figure does not draw in proportion, and particularly, with respect to horizontal size, vertical dimension enlarges more.
Fig. 1 is illustrated in the sectional side view of the electron field emission device 10 of preparation on the substrate 20.Emitter 30 is made of radiating portion 40 and air-breathing part 50.Radiating portion 40 is thin layers of low work function material, preferably is parallel to substrate 20, forms the part of transverse field emitter.Air-breathing part 50 is local at least air-breathing material thin layers that are provided with in abutting connection with radiating portion 40, preferably is parallel to substrate 20 and radiating portion 40.Air-breathing part 50 not only is used as the low resistance electric conductor but also be used as getter surface.Radiating portion 40 and air-breathing part 50 form the self-gettering electron field emitter 30 of one together.Emitter 30 has very thin emission tip 60.Anode 70 separates with emitter 30.When anode 70 with respect to emitter 30 suitable positive biases with when emission tip 60 produces high electric field, attracted to anode 70 from emission tip 60 electrons emitted according to the Fowler-Nordheim equation.Anode 70 receives from the emission tip 60 of emitter 30 or more particularly from radiating portion 40 electrons emitted like this.If forming its surface at least, anode 70 constitutes by the fluorescent material of cathodeluminescence (cathodoluminescent), luminous from anode 70 when being activated so by electronics.Anode 70 can all be made of the fluorophor that conducts electricity.Emitter 30 is preferably by insulating barrier 80 and anode 70 insulation.Emitter 30 is preferably also covered by another insulating barrier 90.Preferred structure shown in Fig. 1 is the emitted transverse device, and wherein field emitter 30 is parallel to substrate 20 horizontal expansions.
Owing to not only penetrate most advanced and sophisticated 60 radius but also very responsive according to the electron field emission of Fowler-Nordheim equation, thereby the radiating portion 40 of emitter 30 preferably has low work function to its work function to fine.Many material known are applicable to radiating portion 40.Can use the infusibility transition metal, for example titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum or tungsten.The field emission tip also can be made of silicon, carbon (especially with the diamond form), lanthanum hexaboride and other material.In structure of the present invention, radiating portion 40 preferably is made of the nitrogenize form of the transition metal of listing above, preferably titanium nitride, tantalum nitride and molybdenum nitride.Use for some, can use additional embodiments, wherein have by diamond (carbon) and constitute and be mixed with the radiating portion 40 of one or more N type dopants so that the low work function emitter to be provided with diamond crystal structures.
The very important feature of preferred structure shown in Figure 1 is the radiating portion 40 of the as far as possible close all-in-one-piece projectile configuration 30 in position of air-breathing part 50, especially as far as possible near emission tip 60.Air-breathing part 50 constitutes by absorbing the material of not wishing gas, and described gas may pollute radiating portion 40.Preferably gettering material is the material that reacts with polluter.
Usually can list in comprising the list of references of following part by effectively air-breathing many known material: E.P.Bertin is " The Encyclopedia of Chemistry " (the 2nd edition, people such as G.L.Clark edit, Reinhold publishes, New York (1966), PP.484-485) article on " Getters "; The book of S.Dushman " Scientific Foundations of VacuumTechnique " (the 2nd edition, John Wiley﹠amp; Sons, New York (1962), PP.174-175); " Handbook of Materials and Techniquesfor Vacuum Devices " (Reinhold publication, New York (1967), PP.545-562) the 18th chapter in " Getter Materials " with W.H.Kohl.The material of being discussed in these lists of references comprises aluminium, barium, beryllium, calcium, cerium, copper, cobalt, iron, lanthanide series, magnesium, mishmetal, nickel, palladium, thorium, uranium, zinc, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten and their suitable alloy, composition and mixture.Usually, any of these or other known air-breathing material all can be used for the air-breathing part 50 of emitter 30.The preferred material of air-breathing part 50 is infusibility transition metals Ti, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten and their alloy, composition and mixture (being more preferably zirconium).
It should be noted that and use pure transition metal to have some advantage as air-breathing part 50, wherein should air-breathing part 50 and become one as the same metal of the nitrogenize form of radiating portion 40.During manufacture, by suitably importing or suppressing nitrogen sequentially the nitrogenize form and the pure form of depositing metal., the special applications of device may influence the selection of material.Because of other consideration, work function for example, the preferred metal nitride that is used for radiating portion 40 can cause comprising different metals in air-breathing part 50.Like this, if use preferred infusibility transition metal and their nitrogenize form, can be same metal or different metal so.Preferred combination is that zirconium is used for air-breathing part 50, and the nitride of titanium, tantalum, molybdenum or their mixture or alloy is used for radiating portion 40.
Fig. 2 represents the sectional side view of emission tip 60.Emitter 30 preferably has the tapered edge of definite emission tip 60 shapes.The radiating portion 40 that preferably has the air-breathing part 50 at edge 55 by formation and form the ledge 45 with the air-breathing part edge 55 of extend through prepares emission tip 60.Although Fig. 1 illustrates near the anode 70 (if it is to be used to show that the fluorophor of usefulness so generally is such) in bottom of final structure, this structure only is the purpose in order to show.Similarly, Fig. 1 and 2 is illustrated in the radiating portion 40 of the emitter 30 under the air-breathing part 50, but this arrangement also only is schematic.The reverse order of these layers (or keep other spatial arrangements of the syntople of air-breathing part and radiating portion) also is practical.Describe in detail below with preferred production process and form the entire device structure of structure and emission tip structure as shown in Figure 1 resemble Fig. 2.Preferred production process
Fig. 3 is a flow chart of showing the preferred production process step, during Fig. 4 a-4e is illustrated in it and makes in the sequence of the sectional side view of each stage device.With reference number S1, S2 ..., S6 represents processing step.
Total manufacturing process comprises the following steps: to provide substrate; The all-in-one-piece emitter is set, and this emitter has emission layer and the gettering layer that is parallel to substrate; By emission layer and gettering layer corrosion, on the all-in-one-piece emitter, form emission edge; With emission edge anode is set separatedly, is used for receiving from the emission edge electrons emitted; Be provided for applying suitable electrical bias voltage and give the device of emitter and anode.In practice, additional step generally also provides insulating barrier.With reference to Fig. 3 and Fig. 4 a-4e, in following section, describe the step of selection process in detail.
At step S1, provide suitable substrate 20, for example silicon, silica, silicon nitride, glass or sapphire.At step S2, (Fig. 4 a) also can select composition to deposit anode layer 70 on substrate.If the shared public anode of all field emission devices on the substrate does not need composition so.Not shown selectable composition step by step in the accompanying drawing.Usually, anode layer 70 can be made of any suitable electric conducting material with suitable thickness (for example 100nm) deposit.For display application, the surface of anode layer 70 should be the fluorophor of cathodeluminescence at least.Be known in the art and have for example fluorophor of many cathodeluminescences of glow color, luminous efficiency, stability etc. of various performances.Several suitable fluorophor are disclosed in respectively all at this and quote as proof in the United States Patent (USP) 5618216,5630741,5644188,5644190 and 5647998 of Potter of reference.In a kind of pattern of selection process, for the display device of producing transmitting green light, anode is zinc oxide (ZnO), and the amount of its Zn surpasses stoichiometry (representing with ZnO:Zn usually).In the another kind of pattern of selection process,, on the surface of anode at least, Ta is set for the display device of producing the emission blue light
2Zn
3O
8Fluorophor.
At step S3, preferably and substrate 20 insulating barrier 80 of deposit predetermined thickness (Fig. 4 b) abreast, between anode layer 70 and device cell subsequently, to provide insulation gap.Insulating barrier 80 can be made of any appropriate insulation body with other step compatibility of technology, for example silica, silicon nitride, aluminium oxide etc.In selection process, insulating barrier 80 is silica.Preferred thickness is about 500nm.
In preferred manufacturing process, the former state preparation is from air-breathing emitter 30 when making the microelectronics field emission device.At step S4, all-in-one-piece is arranged on (Fig. 4 c) on the insulating barrier 80 from air-breathing emitter 30 abreast with substrate 20.In most preferred embodiment, step S4 divides two, and S4a and S4b carry out step by step.In S4a step by step, deposit radiating portion 40 comprises the layer of material of low work function that is used for the electronics emission.In S4b step by step, the air-breathing part 50 that deposit is made of air-breathing material layer.The thickness of radiating portion 40 preferably is about 10-30nm.The thickness of air-breathing part 50 preferably is about 100-200nm.The various materials of each have been described in the foregoing detailed description of device architecture in these layers that are suitable for emitter.Replace preferred sputtering method, can be with any conventional deposition process that is suitable for being deposited material, for example evaporation, chemical vapor deposition, molecular beam deposition, plating wait these layers of deposit emitter 30.Can use such as conventional methods such as known photoetching process commonly used in semiconductor fabrication process and come composition emitter 30.In the above-mentioned figure of quoting Potter for reference as proof, such composition has been described.In the accompanying drawing not shown should the routine composition step by step.When from two parts of air-breathing emitter during based on the infusibility transition metal: deposit is the nitrogenize infusibility transition metal of radiating portion 40 in S4a step by step, with deposit in S4b step by step be the infusibility transition metal layer of air-breathing part, can realize the key character of most preferred former technology.The transition metal basis of these two parts can be a different element or can be based on identical element, and as titanium nitride, for example TiN is used for air-breathing part as radiating portion and pure titanium, and the both is based on titanium.Use the preferred embodiment of different elements to have the radiating portion of the nitrogenize form that comprises titanium, tantalum, molybdenum or their mixture or alloy and comprise the air-breathing part of zirconium metal.When the transition metallic element when two parts of emitter 30 are identical, form the nitration case of radiating portion 40 by the reactive sputtering of metal in the atmosphere of nitrogen is arranged, suppress the air-breathing part 50 of nitrogen simultaneously by this metal of continuous sputter then with the sputter simple metal, can be by continuous technology deposit emitter 30.Utilize this technology, do not need two parts 40 of tangible boundary demarcation and 50; Nitrogen content is reduced to low-level gradually more or less in air-breathing part 50 from the high relatively level of radiating portion 40, be preferably zero.Even have different transition metal in these two parts 40 in 50, two metals constitute under the situation of solid solution alloies in film, also can obtain similar composition and gradually change.
Although having, preferred embodiment described here comprises two- layer 40 and 50 emitter 30, but additional embodiments (being shown among Fig. 5) has and comprises the compound emitter of following three layers stratiform: middle emission layer 40,50, one gettering layers of upper and lower gettering layer on the emission layer and a gettering layer under emission layer.Describe and have three layers of compound emitted transverse body the field emission device structure of (not from air-breathing feature) in the United States Patent (USP) 5647998 of Potter in detail, this patent is quoted as proof for reference in this article.
At step S5, second insulating barrier 90 selectively is deposited on (Fig. 4 d) on the emitter 30.The material of this second insulator can be identical with the insulating material of layer 80, and thickness can be about 50-200nm.Silica is a preferable material.Insulating barrier 90 protection emitters also provide dielectric spacer layer, make on emitter and the plane that is deposited on emitter 30 to be used to control any grid electrode insulating that flows to the electric current of anode 70 from emission tip 60.
At step S6, if exist, emission layer 40 by second insulating barrier 90, emitter 30 and gettering layer 50 and directly corrode by insulating barrier 80 form the opening 75 (Fig. 4 e) that extends downwardly into anode 70.The width of opening 75 is not strict; General width is about 2-20mm.The directly preferably corrosion of the anisotropy " groove " such as reactive ion etching commonly used in semiconductor fabrication process of corrosion.With respect to the corrosion of the material of emitter 30, the preferential etching insulating layer 80 of this etching process and 90.Although control this etching process usually is high anisotropy, preferably controls it in this application to comprise the isotropic etch of some degree.This produces the projectile configuration of representing in detail among Fig. 2.The etching process of step S6 is forming thin emission edge 60 and forming edge 55 on air-breathing part 50 on the radiating portion 40, so that the ledge of radiating portion 40 45 extend through edges 55, thereby form shape and from the emission tip 60 of air-breathing performance with expectation.Because air-breathing part 50 has the ledge on the surface that is corroded of extend through insulating barrier 80 and/or 90, thereby the ledge 45 of emitter is gone back the surface of extend through insulating barrier 80 and/or 90.Directly, highly beneficial for absorbing pollution with the emission tip 60 of radiating portion 40 and the exposed portions serve that ledge 45 is adjacent to be provided with air-breathing part 50.
Be preferably in and form emission tip 60 when forming groove opening 75, but also can after forming this opening, carry out.For example in plasma etching technology by gettering layer 50 above and/or under a spot of support of erosion removal.Select different etching processs so that compared with air-breathing part 50, the radiating portion 40 of stacked emitter is corroded still less.This stays ultra-fine emission edge or most advanced and sophisticated 60.For some combination of material in stacked compound emitter 30, preferred different etching processs can be chemistry or electrochemical corrosion, different electropolishing or different ablations.
In case form the device architecture of Fig. 1, the operation of device requires emitter and anode are applied the device of suitable electrical bias voltage, and this device is enough to make electronics to be transmitted into anode with the usual manner of field emission device from emitter.Like this, the device of finishing has the conduction contact, this conduction contact is set to allow from the outside appropriate bias voltage that inserts of device.In the patent with reference to the Potter that quotes as proof this conduction contacting structure has been described in this article.Commercial Application
The present invention is used to make field emission device, because each device in the array can have from air-breathing emitter, thereby is specially adapted to the field-emitter display that the array by field emission device constitutes.Preferred manufacturing process is particularly suitable for making simultaneously many devices in this array.Also can be used as the electron emitter part of electron gun structure according to the present invention preparation from air-breathing emitter.
According to aforementioned description, those skilled in the art confirms essential characteristic of the present invention easily, makes its of the present invention various changes and modification of being applicable to various uses and condition, and can not break away from the spirit and scope of the present invention.For a person skilled in the art, according to thought of this specification or the of the present invention practice disclosed according to this paper, other embodiments of the invention are conspicuous.For example, sequence of steps and other suitable material that can change manufacturing process can replace described material herein.Although by the structrual description that is used for display the preferred embodiment of emitter, also can will be prepared into isolated location, for example by removing substrate from air-breathing emitter.Specification and example are regarded as merely exemplary, should limit true scope of the present invention and spirit by following claim.
Claims (39)
1. electron field emission device, described electron field emission device comprises emitter, this emitter comprises:
A) ground floor of electronic emitting material formation; With
B) second layer, the described second layer comprises the material that can absorb polluter.
2. electron field emission device that is formed on the substrate, described electron field emission device comprises emitter, this emitter comprises:
A) ground floor of electronic emitting material formation, described ground floor and described substrate are provided with abreast; With
B) second layer, the described second layer and described substrate are provided with abreast and comprise the material that can absorb polluter.
3. electron field emission device that is formed on the substrate, described electron field emission device comprises:
A) emitter, described emitter comprises:
ⅰ) the ground floor of electronic emitting material formation, described ground floor and described substrate are provided with abreast; With
ⅱ) the second layer, the described second layer and described substrate are provided with abreast and comprise the material that can absorb polluter;
B) anode that separates with described emitter is provided with this anode and makes it receive described ground floor electrons emitted from described emitter; With
C) described emitter and described anode are applied the device of electrical bias, this electrical bias is suitable for causing the electron field emission from the described ground floor of described emitter.
4. electron field emission device as claimed in claim 1, the described second layer of wherein said emitter and described ground floor directly are provided with contiguously.
5. electron field emission device as claimed in claim 1, the described ground floor of wherein said emitter have the low work function that is used for the electronics emission.
6. electron field emission device as claimed in claim 1, the described second layer of wherein said emitter comprise the material with described polluter reaction.
7. electron field emission device as claimed in claim 1, the described ground floor of wherein said emitter is characterised in that, the described second layer compared with described emitter, have low rate of corrosion, thereby differently corrode the described second layer of described emitter with the part of described emitter with respect to predetermined corrosive agent.
8. electron field emission device as claimed in claim 1, the described second layer of wherein said emitter comprises transition metal.
9. electron field emission device as claimed in claim 1, the described second layer of wherein said emitter comprises the material that is selected from the tabulation that is made of aluminium, barium, beryllium, calcium, cerium, copper, cobalt, iron, lanthanide series, magnesium, mishmetal, nickel, palladium, thorium, uranium, zinc, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten and its alloy, composition and mixture.
10. electron field emission device as claimed in claim 1, the described ground floor of wherein said emitter comprises the transition metal of nitrogenize.
11. electron field emission device as claimed in claim 1, the described second layer of wherein said emitter comprise that the described ground floor of first transition metal and described emitter comprises second transition metal of nitrogenize.
12. electron field emission device as claimed in claim 1, the described second layer of wherein said emitter has the edge, comprise ledge with the described ground floor of described emitter, the described edge of the described second layer of this ledge extend through is to form emission tip.
13. electron field emission device as claimed in claim 8, wherein said transition metal are selected from the tabulation that is made of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten and its alloy, composition and mixture.
14. electron field emission device as claimed in claim 10, the transition metal of wherein said nitrogenize are selected from the tabulation that the nitrogenize form by titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten and its composition and mixture constitutes.
15. electron field emission device as claimed in claim 11, wherein said first and second transition metal are identical.
16. electron field emission device as claimed in claim 11, wherein said first and second transition metal are different.
17. an electron field emission device that is formed on the substrate, described electron field emission device comprises:
A) emitter, described emitter comprises:
ⅰ) be used to absorb the ground floor of polluter, described ground floor comprises first transition metal and is provided with abreast with described substrate; With
ⅱ) be used for the second layer of emitting electrons, the described second layer comprises second transition metal of nitrogenize and is provided with abreast with described substrate, and contacts with described ground floor to small part;
B) anode that separates with described emitter is provided with this anode and makes it receive described second layer electrons emitted from described emitter; With
C) described emitter and described anode are applied the device of electrical bias, this electrical bias is suitable for causing the electron field emission from the described second layer of described emitter.
18. electron field emission device as claimed in claim 17, wherein said first transition metal is a zirconium, and described second transition metal is selected from the tabulation that is made of titanium, tantalum, molybdenum and its composition, mixture and alloy thereof.
19. an electron field emission device that uses the cold cathode field emission electron source comprises:
A) substrate has the substrate top surface that limits first plane;
B) anode;
C) field emitted electron emitter, separate first preset distance with described anode and be arranged on described first parallel plane second plane on, described electron emitter comprises:
ⅰ) have the film that is parallel to the upper and lower first type surface that described second plane is provided with, described film has the work function that is suitable for electron field emission,
ⅱ) first breathing film that is provided with contiguously with the described top major surface of described film and
ⅲ) second breathing film that is provided with contiguously with the described bottom major surface of described film, at least one in described first and second breathing films conducted electricity;
D) with described first and second breathing films of described electron emitter in described at least one be connected so that the first conduction contact of negative electrode contact to be provided;
E) contact with second conduction that the described first conduction contact separates and is connected so that the anode contact to be provided with described anode, thereby described device can have the electrical bias voltage that is applied thereto; With
F) apply the device of described electrical bias voltage.
20. electron field emission device as claimed in claim 19, the described film of wherein said emitter is characterised in that, described first and second breathing films compared with described emitter, has low rate of corrosion with respect to predetermined corrosive agent, thereby differently corrode described first and second breathing films of described emitter with the part of described emitter, on each of described first and second breathing films, form the edge thus, with the ledge that forms described emitter, the described edge of described first and second breathing films of this ledge extend through is to provide the sharp-pointed emission tip of described field emitted electron emitter.
21. a manufacture method that is used to have the field emission device of self-gettering electron field emitter comprises the following steps:
A) provide substrate;
B) with described substrate the ground floor that first transition metal of nitrogenize constitutes is set abreast;
C) parallel with described ground floor and the second layer that second transition metal constitutes is set contiguously with described ground floor;
D) the described first and second layers of emitter that has emission edge with formation of corrosion; With
E) anode that separates with described emission edge is set, when suitable electrical bias voltage was applied on described emitter and the described anode, described anode received from described emission edge electrons emitted.
22. manufacture method as claimed in claim 21 also comprises step:
F) composition is described first and second layers.
23. manufacture method as claimed in claim 21 also comprises step:
G) on described anode, fluorophor is set, when described fluorophor by described electron excitation time emission light.
24. manufacture method as claimed in claim 21, wherein said corrosion step (d) is included in and forms first edge on the described ground floor and form second edge on the described second layer, so that described first edge terminates in the ledge of described ground floor, described second edge of the described second layer of wherein said ledge extend through, thus described emission edge formed.
25. manufacture method as claimed in claim 21 also comprises step:
H) between described substrate and described emitter, first insulating barrier is set.
26. manufacture method as claimed in claim 21 also comprises step:
I) second insulating barrier is set on described emitter.
27. manufacture method as claimed in claim 21, wherein
By the transition metal of nitrogenize is set, implement described nitrogenize first transition metal layer step (b) is set; With
By being provided with identical in step (b) but be first transition metal of the form of pure metal of non-nitrogenize, that implements described second transition metal layer is provided with step (c).
28. manufacture method as claimed in claim 21, wherein
Provide some nitrogen simultaneously by described first transition metal of reactive sputtering, implement described nitrogenize first transition metal layer step (b) is set; With
Continue described first transition metal of sputter simultaneously by removing nitrogen, thereby do not having described second transition metal of deposit under the situation of nitrogen, that implements described second transition metal layer is provided with step (c).
29. manufacture method as claimed in claim 21, wherein the nitrogenize form of the transition metal of selecting from the tabulation that titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten and its alloy, composition and mixture constitute by deposit is implemented described ground floor step (b) is set.
30. the manufacture method that is used for the self-gettering electron field emission device as claimed in claim 21, wherein the transition metal of selecting from the tabulation that titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten and its alloy, composition and mixture constitute by deposit is implemented the described second layer step (c) is set.
31. the manufacture method that is used for the self-gettering electron field emission device as claimed in claim 25 also comprises step:
I) form opening by described emitter and described first insulating barrier, corrode described first and second layers simultaneously.
32. the manufacture method that is used for the self-gettering electron field emission device as claimed in claim 26 also comprises step:
J) form opening by described second insulating barrier, described emitter and described first insulating barrier, corrode described first and second layers simultaneously.
33. a manufacture method that is used for the self-gettering electron field emission device comprises the following steps:
A) provide substrate;
B) on described substrate anode is set, described anode has top surface;
C) first insulating barrier is set on described anode;
D) with described substrate the ground floor that first transition metal of nitrogenize constitutes is set abreast;
E) parallel with described ground floor and the second layer that second transition metal constitutes is set contiguously with described ground floor;
F) described first and second layers of composition alternatively;
G) second insulating barrier is set on the described second layer;
H) formation is by the described ground floor of first transition metal formation of described first and second insulating barriers, nitrogenize and the opening of the described second layer that second transition metal constitutes, corrode described first and second layers simultaneously, formation has the emitter of the emission edge that separates with described anode, and the described top surface that keeps described anode simultaneously is not corroded basically; With
I) provide a device, this device applies suitable electrical bias to described emitter and described anode, is enough to make electronics to be transmitted into described anode from described emitter.
Comprise and fluorophor is set 34. the manufacture method that is used for the self-gettering electron field emission device as claimed in claim 33, wherein said anode are provided with step (b) to form the described at least top surface of described anode.
35. the manufacture method that is used for the self-gettering electron field emission device as claimed in claim 33, wherein
By the transition metal of nitrogenize is set, implement described nitrogenize first transition metal layer step (d) is set; With
By being provided with identical in step (d) but be first transition metal of the form of pure metal of non-nitrogenize, that implements described second transition metal layer is provided with step (e).
36. the manufacture method that is used for the self-gettering electron field emission device as claimed in claim 33, wherein
Provide some nitrogen simultaneously by the described transition metal of reactive sputtering, implement described nitrogenize transition metal layer step (d) is set; With
Continue the described transition metal of sputter simultaneously by removing nitrogen, thus deposit with identical in step (d) but be first transition metal of the form of pure metal under the no nitrogen situation, that implements described transition metal layer is provided with step (e).
37. a manufacture method that is used for the self-gettering electron field emission device comprises the following steps:
A) provide substrate;
B) the fluorophor anode of conduction is set on described substrate, described anode has top surface;
C) first insulating barrier that silica constitutes is set on described anode;
D) exist under the situation of nitrogen by the described transition metal of reactive sputtering, the ground floor that the transition metal of nitrogenize constitutes is being set abreast with described substrate;
E) remove described nitrogen simultaneously by the described transition metal of sputter continuously, parallel with described ground floor and the second layer that described transition metal constitutes is set contiguously with described ground floor;
F) described first and second layers of composition alternatively;
G) second insulating barrier that silica constitutes is set on the described second layer;
H) the described ground floor that constitutes of first transition metal by described first and second insulating barriers, nitrogenize, the described second layer with second transition metal formation, directly corrode, form opening, corrode described first and second layers simultaneously, form first edge of described ground floor and second edge of the described second layer, so that described ground floor comprises the ledge at described second edge of the described second layer of extend through, thereby form the emitter with the emission edge that separates with described anode, the described napex surface that keeps described anode simultaneously is not corroded basically; With
I) provide a device, this device applies suitable electrical bias voltage to described emitter and described anode, is enough to make electronics to be transmitted into described anode from described emitter, described thus fluorophor stimulated luminescence.
38. a manufacture method that is used to have such self-gettering electron field emission device of horizontal electron emitter comprises the following steps:
A) provide substrate;
B) form first insulating barrier abreast with described substrate, described first insulating barrier has top main surfaces;
C) sequential deposit on the described top main surfaces of described first insulating barrier
ⅰ) the emitter lower floor of the first air-breathing material formation,
ⅱ) have emitter central core that the material of the work function that is suitable for electron field emission constitutes and
ⅲ) the emitter upper strata of the second air-breathing material formation is to form stacked compound emitter layer;
D) deposit second insulating barrier alternatively;
E) by the formed layer in front selection and directly corrosion are arranged, form opening;
F) the described stacked compound emitter layer of corrosion, each the marginal portion of removing the upper and lower layer of described emitter at least keeps the outstanding at least marginal portion of described emitter central core simultaneously, forms the emitter with emission edge; With
G) with described emission edge anode is set separatedly, when suitable electrical bias voltage imposed on described emitter and described anode, described anode received from described emission edge electrons emitted.
39. the field emission device with at least one self-gettering electron field emitter, described field emission device is by any preparation in the manufacture method of claim 21-38.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/990,624 US6005335A (en) | 1997-12-15 | 1997-12-15 | Self-gettering electron field emitter |
| US08/990,887 | 1997-12-15 | ||
| US08/990,887 US6017257A (en) | 1997-12-15 | 1997-12-15 | Fabrication process for self-gettering electron field emitter |
| US08/990,624 | 1997-12-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1281584A true CN1281584A (en) | 2001-01-24 |
Family
ID=27130652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN98812141A Pending CN1281584A (en) | 1997-12-15 | 1998-12-11 | Self-gettering electron field emitter and fabrication process |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1055245A1 (en) |
| JP (1) | JP2002509336A (en) |
| KR (1) | KR20010032492A (en) |
| CN (1) | CN1281584A (en) |
| AU (1) | AU1818799A (en) |
| CA (1) | CA2312845A1 (en) |
| WO (1) | WO1999031698A1 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5545946A (en) * | 1993-12-17 | 1996-08-13 | Motorola | Field emission display with getter in vacuum chamber |
| US5655886A (en) * | 1995-06-06 | 1997-08-12 | Color Planar Displays, Inc. | Vacuum maintenance device for high vacuum chambers |
| US5578900A (en) * | 1995-11-01 | 1996-11-26 | Industrial Technology Research Institute | Built in ion pump for field emission display |
-
1998
- 1998-12-11 KR KR1020007005734A patent/KR20010032492A/en not_active Application Discontinuation
- 1998-12-11 WO PCT/US1998/026379 patent/WO1999031698A1/en not_active Application Discontinuation
- 1998-12-11 CA CA002312845A patent/CA2312845A1/en not_active Abandoned
- 1998-12-11 AU AU18187/99A patent/AU1818799A/en not_active Abandoned
- 1998-12-11 JP JP2000539504A patent/JP2002509336A/en active Pending
- 1998-12-11 CN CN98812141A patent/CN1281584A/en active Pending
- 1998-12-11 EP EP98963084A patent/EP1055245A1/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002509336A (en) | 2002-03-26 |
| AU1818799A (en) | 1999-07-05 |
| KR20010032492A (en) | 2001-04-25 |
| CA2312845A1 (en) | 1999-06-24 |
| WO1999031698A1 (en) | 1999-06-24 |
| EP1055245A1 (en) | 2000-11-29 |
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