CN1281250A - DC degradated word line activating timing with self refreshed DRAM - Google Patents
DC degradated word line activating timing with self refreshed DRAM Download PDFInfo
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- CN1281250A CN1281250A CN 99110454 CN99110454A CN1281250A CN 1281250 A CN1281250 A CN 1281250A CN 99110454 CN99110454 CN 99110454 CN 99110454 A CN99110454 A CN 99110454A CN 1281250 A CN1281250 A CN 1281250A
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Abstract
A method for testing semiconductor circuit is disclosed. Said semiconductor circuit is composed of word line connected to memory device, address receiver, address decoder for decoding address and selecting a word line, self-refreshing unit for refreshing word line, and device control circuit in test mode. Its method include providing the test mode signal to test mode device, activating the test mode operation of self-refreshing unit, sequentially activating word lines, holding the activated state of word line in a predefined time period, and deactivating word line.
Description
The present invention relates generally to that DC is aging, be used for word line is remained on about 10 seconds cycle of very high voltage, thus the stress of maximum is applied in the isolation between word line and unit or the bit line.
The stress condition of described maximum is used for normal operation (for example, independent reading and writing) and reduces testing time by each word line.Normal operating condition test circuit is unrealistic, is owing to the testing time is long.For example, more than 2k, use normal operating condition, the testing time that needs 5 hours is to keep for 10 seconds with each word line high level individually.
Therefore, all usually word lines activate simultaneously, producing maximum stress, and reduce the aging time cycle.Yet the conducting simultaneously of all lines causes the huge pressure drop in the word line electric power network (Vpp net).Particularly, make the conducting simultaneously of all word lines on the word line power supply, induce huge current spike, pressure drop in the generation electric power network and the integrity problem on the power line.Particularly, if it is conventional aging to use external voltage source Vpp to carry out, the resistance limits that connects up to the chip of inner Vpp net by external pads electric current.Therefore, can see significant electromigration stress and possibility even fusing by pad to the lead of Vpp net.
Exemplary custom circuit is presented among Fig. 1.Conventional circuit comprises the address recipient 10 of receiver address 15, control signal receiver 14, test pattern decoder 11 provides the word line decoding system 12 of word line electric power network voltage 17 (Vpp), and the memory array 13 that receives the aging signal 16 of DC of self-testing mode decoder 11.
Fig. 2 shows the timing that is presented at the signal in the circuit among Fig. 1.Particularly, Fig. 2 shows rwo address strobe signals (RAS), column address signal (CAS), writes enable signal (WE), (ADR-can be XA to address signal
0XA
nAny address), word-line signal (WL0, WL ... WL
x) and word line electric power network voltage signal (Vpp).
As shown in Figure 2, the aging signal of DC makes all word lines (WL0, WL ... WL
x) become high level simultaneously, on word line electric power network voltage signal Vpp, produce current spike and huge pressure drop (for example, greater than 2V).As mentioned above, the described current spike on the word line power supply produces integrity problem on power line.
Therefore, an object of the present invention is to provide a kind of DC aging structure and method, use the existing self-refresh oscillator of circuit to make all word lines among the DRAM stressed, make word line upper stress maximization (word line electric power network voltage signal Vpp does not produce huge pressure drop), keep the testing time short as much as possible simultaneously.
Particularly, the present invention includes the method for measuring semiconductor circuit, semiconductor circuit comprises the word line that is connected to memory device, the address recipient of receiver address, decoding address is also selected the address decoder of a word line, the self-refresh unit of refresh word line during non-test pattern and test pattern, the test pattern device of device control semiconductor circuit in test pattern, method comprises test mode signal is provided to the test pattern device, activate the test mode operation of self-refresh unit, use the self-refresh unit to activate word line in turn, word line is remained in the state of activation predetermined period of time and word line was lost efficacy.
During non-test pattern, the self-refresh unit activates and makes word line to lose efficacy in turn, and the step that activates word line in turn comprises that the operation of revising the self-refresh unit activates word line in turn and word line is remained on step in the state of activation.
Circuit also comprises the multiplexer that is connected to address decoder, and method uses multipath conversion that receiver is disconnected from word line during also being included in test pattern.Circuit also comprises the test pattern decoder, the step that test mode signal is provided to circuit comprises test mode signal is provided to the test pattern decoder, method also comprises when test pattern decoder acceptance test mode signal, activates the step of the test pattern of self-refresh unit.
From the detailed introduction of the preferred embodiment of the present invention with reference to the accompanying drawings, will understand above and other purpose, scheme and advantage better, wherein:
Fig. 1 is the schematic diagram of custom circuit,
Fig. 2 is presented at circuit among Fig. 1 at the sequential chart of different each signal conditions of time,
Fig. 3 is schematic diagram in a circuit according to the invention,
Fig. 4 is presented at circuit among Fig. 3 at the sequential chart of different each signal conditions of time,
Fig. 5 is schematic diagram in a circuit according to the invention.
As mentioned above, all word lines of conducting simultaneously induce current spike on the word line power supply, and pressure drop in the generation power net and the integrity problem on the power line.The present invention use the existing self-refresh oscillator of circuit in turn all word lines (during normal self refresh operation) of conducting increase the time (for example, increasing 64ms usually) that needs, the time that all word lines of conducting keep needs to 512ms with minimizing.
The aging retention time that needs of DC increases 64ms thus and does not significantly increase the testing time to 512ms at 10s.In addition, the load on the power supply is similar to normal refresh operation, can not cause undesirable as mentioned above current spike.
With reference now to accompanying drawing,, Fig. 3 particularly, circuit of the present invention comprise the self-refresh counter 38 of the aging signal of DC of address receivers 30, control signal receiver 34, test pattern decoder 31, the word line decoding system 32 that word line electric power network voltage 37 (Vpp) is provided, memory array 33 and the acceptance test mode decoder 31 of receiver address 35.
Many structures that the present invention uses are that those of ordinary skill in the art is generally well-known, and for simplifying and making new feature of the present invention clearer, the detailed introduction of described structure has been omitted from the disclosure.Therefore, some parts and/or the system at many places is called " general " components/systems in the disclosure.
The Input Address 35 that can cushion from the external storage controller (not shown) for the address receivers 30 of " general receiver ".Address receivers 30 is converted to the memory chip internal address bus with Input Address 35.In normal (for example, reading and writing and refresh) these addresses of operating period, be used for translation memory array 33.
The decoder that test pattern decoder 31 preferably contrasts Input Address and known presumptive test pattern group of addresses.Test pattern is being worked memory chip outside normal operating parameter, usually by making control signal on some other the effective chip of function.The example of test pattern comprises a) signal margin test b) CAS is prior to RAS (CBR) c) the invalid d of voltage modulated) the DC wafer is aging or the like.
Self-refresh counter 38 carries out the refresh operation of specific period when enabling.Self-refresh counter 38 preferred " general-purpose system ".
During normal self refresh operation, self-refresh counter 38 produces new address, activates row, waits for that all unit on row refresh, make row to lose efficacy, increase row address.Repeat these steps and all refresh (being significantly smaller than the conventional ageing time that needs) up to all unit within the predetermined time.For example, the refresh operation of 4k and be that the interval of 15 μ s needs 64ms altogether in turn between the word line activating.The refresh operation of 32k needs 512ms similarly.64ms adds to the additional period of 512ms in the conventional ageing time of about 10s can significantly not increase the testing time.
Compare with normal refresh operation, adopt the present invention, during the DC aging mode, the word line before before next word line activating still activates.Therefore, adopt the present invention, all word lines are set at high level state (for example conducting in turn) in turn.Then, for the aging operation of routine, in case all word line conductings, the cycle that word line will remain on high level state one routine (for example, 10s), is applied on the word line to allow enough stress, can detects the device of defective thus.
Fig. 4 shows the sequential chart of the interior signal of circuit among Fig. 3.For the signal shown in Fig. 2, Fig. 3 shows row address strobe (RAS) signal, column address signal (CAS), writes enable signal (WE), (ADR-can be XA to address signal
0XA
nAny address), word-line signal (WL
0, WL ... WL
x) and word line electric power network voltage signal (Vpp).
Yet, different with situation shown in Figure 2, word line among Fig. 4 (WL0, WL ... WL
x) activation be in turn.Each word-line signal (WL0, WL ... WL
x) its own unique some place activation in time, the pressure drop of voltage signal Vpp shown in Figure 2 thus can not occur among Fig. 4.Replace, along along voltage signal Vpp very little not marked change only having taken place in the zone that opposite arrows among Fig. 4 shows.
In another embodiment of the present invention, except comprising multiplexer 59, Fig. 5 shows similar structures shown in Figure 3.Particularly, the circuit shown in Fig. 5 comprises that address receivers 50, control signal receiver 54, test pattern decoder 51, the word line decoding system 52 that word line electric power network voltage 57 (Vpp) is provided, memory array 53 and the reception of receiver address 55 come the self-refresh counter 58 of the aging signal 56 of DC of self-testing mode decoder 51.
Be presented at described system decoding address 55 among Fig. 5 and deliver to the word line of address receivers 50.Between the DC aging period, chip is delivered in suitable address/control combination, imports DC burn-in test pattern thus.Activated the aging signal (DCBI) of DC like this from measuring decoder 51.DC is aging, and signal 56 makes multiplexer 59 that address bus is delivered to by self-refresh system 58 in the address, ignores the address 55 from address receivers 50 simultaneously.Multiplexer allows to place neatly self-refresh control circuit piece.The realization of the embodiment that shows among Fig. 3 need be imported after the burn-in test pattern, and address receivers is invalid.Do not have multiplexer, need additional logic control to make address receivers 50 invalid.By inserting multiplexer 59, do not need other control to address receivers 50.
Carry out following logical operation, carry out DC ageing process of the present invention.DC aging (BURNINDCIPL) sign indicating number is provided to self-refresh control circuit 54, and row address 0 is as initial value.Aging (BURNINDC) signal of DC shows that trip is invalid, and sets other array functional in identical mode in the conventional DC aging mode.
During the highest row address, DC is aging, and signal can be used for turn-offing self-refresh control circuit 54 in reaching the self-refresh counter.If there is not conflict in the activation of the row that has activated, or keep the very long ageing time of word line high level if desired, so preferably do not use described shutoff.
Aging signal of DC and IPL clear signal are turn-offed all word lines together.In addition, the present invention minimizes the influence of earth mat as mentioned above.
In another embodiment of the present invention, the aging counter of DC preferably includes only to be had even number or odd row address is only arranged in the DC aging mode, to induce WL-WL stress.As known to ordinary skill in the art, if the aging row address contiguously that enables after the self-refresh rolling counters forward of DC for example can be selected even number or odd address individually.
In the DC aging mode, need the electric current of all word lines of conducting to be substantially similar to the electric current that in normal refresh mode, needs.Electric current will be by the maximum current limit of the Vpp generator of inside, and resistance in the Vpp net or Vpp stressed pad are known to ordinary skill in the art to the resistance of the lead of inner Vpp net.
Provide current requirements between the normal character line active period with some nargin ground design Vpp systems.Attempt design Vpp system handles 2k to 8k, normal electric current is unpractical.
Ratio≤1 be illustrated in the negative effect of selecting all word lines on the Vpp routinely simultaneously.The quantity of electric charge of selecting all word line needs simultaneously is much larger than the quantity of electric charge that is stored on the Vpp electric capacity.This causes the big pressure drop on the Vpp usually.The bandwidth of Vpp system is very little, can not compensate the big pressure drop of described routine.If ratio is much larger than 1, the effect of pressure drop will minimize so.Yet, making the many more chip areas of the bigger needs of Vpp system, this is unpractiaca.The ability of Vpp of powering in the specific time equally also is the advantage that the present invention has.Therefore the initial drop in the Vpp net is by the ratio decision of Vpp buffer capacitance value and word line capacitance value, and this ratio is much smaller than 1.
As mentioned above, use self-refresh oscillator minimizing online load of Vpp of conducting word line and normal refresh operations value in turn.In addition, need additional chip area to reduce, be because oscillator has been provided to and has carried out refresh operation on the chip, and be connected to the circuit turn-on word line.In addition, as mentioned above, the 64ms that adds the stress time of about 10s to can significantly not increase the testing time to the additional period of 512ms.Other advantage of the present invention comprises controls and limits Vpp voltage better.For the method for routine, altering a great deal among the Vpp is difficult to determine.By only adding very little circuit to existing circuit, do not need sizable chip area.In addition, chip power supply high-voltage line and bus-bar is connected (Vpp) and can influence the present invention.Though other method need be added power supply in the aging chamber to, the present invention does not need the power supply that adds, helps to reduce aging cost.By using on-chip circuitry to begin to wear out, can reduce the complexity of burn-in test in addition.
Though introduced the present invention with reference to preferred embodiment, those skilled in the art will find to revise enforcement the present invention in the spirit and scope that fall into the accessory claim book.
Claims (8)
1. the method for a test circuit, described circuit comprises line and refreshes the self-refresh unit of described line that during non-test pattern described method comprises:
Test mode signal is provided to described circuit;
Use described self-refresh unit to activate described line in turn;
Described line is remained on a preset time cycle in the state of activation; And
Make described line invalid.
2. according to the method for claim 1, wherein in described non-test pattern, described self-refresh unit activates and invalid described line in turn, and the described step that activates in turn comprises that the operation of revising described self-refresh unit activates described line in turn and described line remained on step in the state of activation.
3. according to the method for claim 1, wherein said circuit also comprises address decoder that is connected to described line and the multiplexer that is connected to described address receivers, and described method also comprises the step of using described multiplexer during described test pattern described address receivers to be disconnected from described line.
4. according to the method for claim 1, wherein said circuit also comprises the test pattern decoder, the described step that test mode signal is provided to described circuit comprises described test mode signal is provided to described test pattern decoder that described method also comprises the step that activates the test pattern of described self-refresh unit when described test pattern decoder receives described test mode signal.
5. according to the process of claim 1 wherein that described line comprises word line, the described step that activates described line in turn comprises the step that activates described word line in turn.
6. the method for a measuring semiconductor circuit, described semiconductor circuit comprises address receivers, the described address of decoding of the word line that is connected to memory device, receiver address and selects the address decoder of a described word line, refreshes the self-refresh unit of described word line during non-test pattern and test pattern, the test pattern device of control semiconductor circuit during in test pattern, described method comprises:
Test mode signal is provided to described test pattern device;
Activate the test mode operation of described self-refresh unit;
Use the self-refresh unit to activate described word line in turn; And
Described word line is remained on a predetermined period of time in the state of activation; And
Described word line was lost efficacy.
7. according to the method for claim 6, wherein in described non-test pattern, described self-refresh unit activates and invalid described word line in turn, and the step that activates in turn comprises that the operation of revising described self-refresh unit activates described word line in turn and described word line remained on step in the state of activation.
8. according to the method for claim 6, wherein said circuit comprises also and is connected to described multiplexer that described method also comprises the step of using described multiplexer during described test pattern described address receivers to be disconnected from described word line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB991104544A CN1152421C (en) | 1999-07-14 | 1999-07-14 | DC degradated word line activating timing with self refreshed DRAM |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB991104544A CN1152421C (en) | 1999-07-14 | 1999-07-14 | DC degradated word line activating timing with self refreshed DRAM |
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| Publication Number | Publication Date |
|---|---|
| CN1281250A true CN1281250A (en) | 2001-01-24 |
| CN1152421C CN1152421C (en) | 2004-06-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB991104544A Expired - Lifetime CN1152421C (en) | 1999-07-14 | 1999-07-14 | DC degradated word line activating timing with self refreshed DRAM |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100345219C (en) * | 2002-11-11 | 2007-10-24 | 国际商业机器公司 | Testing method of embedding DRAM array |
| CN100346422C (en) * | 2002-08-08 | 2007-10-31 | 富士通株式会社 | Semiconductor memory device and control method thereof |
| CN100359596C (en) * | 2002-10-31 | 2008-01-02 | 海力士半导体有限公司 | Semiconductor memory having enhanced testing power |
| CN110261754A (en) * | 2018-03-12 | 2019-09-20 | 爱思开海力士有限公司 | Semiconductor device and test macro including the semiconductor device |
-
1999
- 1999-07-14 CN CNB991104544A patent/CN1152421C/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100346422C (en) * | 2002-08-08 | 2007-10-31 | 富士通株式会社 | Semiconductor memory device and control method thereof |
| CN100359596C (en) * | 2002-10-31 | 2008-01-02 | 海力士半导体有限公司 | Semiconductor memory having enhanced testing power |
| CN100345219C (en) * | 2002-11-11 | 2007-10-24 | 国际商业机器公司 | Testing method of embedding DRAM array |
| CN110261754A (en) * | 2018-03-12 | 2019-09-20 | 爱思开海力士有限公司 | Semiconductor device and test macro including the semiconductor device |
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| Publication number | Publication date |
|---|---|
| CN1152421C (en) | 2004-06-02 |
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