CN1275366C - Top-pumped optical device - Google Patents
Top-pumped optical device Download PDFInfo
- Publication number
- CN1275366C CN1275366C CNB038057298A CN03805729A CN1275366C CN 1275366 C CN1275366 C CN 1275366C CN B038057298 A CNB038057298 A CN B038057298A CN 03805729 A CN03805729 A CN 03805729A CN 1275366 C CN1275366 C CN 1275366C
- Authority
- CN
- China
- Prior art keywords
- light source
- gain medium
- medium structure
- pump
- waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/02—Optical fibres with cladding with or without a coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0617—Crystal lasers or glass lasers having a varying composition or cross-section in a specific direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
- H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/09403—Cross-pumping, e.g. Förster process involving intermediate medium for excitation transfer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Lasers (AREA)
Abstract
Disclosed is an optical device with enhanced pumping efficiency where light from a pumping light source is efficiently absorbed in a gain medium structure placed under the pumping light. The major characteristic of the optical device of the present invention is that it is top-pumped and a portion in the gain medium structure, which is included in a beam spot of the light source, has a larger area than other portions in the gain medium structure. According to the present invention, a top-pumped optical device with higher pumping efficiency can be provided.
Description
Technical field
The present invention relates to a kind of top pumping (top-pumped) optical device, relate more particularly to a kind of optical device that pumping efficiency improves when being absorbed the gain medium structure that is arranged in below the pump light source effectively from the light of pump light source.
Background technology
In general, laser has been used in the pumping of optical device such as optical waveguides amplifier.Lasing light emitter has very high efficient.In addition, because the high coherence of laser does not disperse it, so lasing light emitter can be with these equipment of high strength pumping.But lasing light emitter is only launched the light of limited wave band.Therefore, in order to address this problem, use high-power photoflash lamp, to export broadband light as pump light source.But this Flash lamps and lanterns has following shortcoming, and promptly size is big and efficient is low, and needs high voltage or high electric current in operating process.
Therefore, because the optical band that the LED (light-emitting diode) of recent exploitation is exported is wideer and efficient is higher, therefore proposed to use the substitute of LED as conventional pump light source.But, if with LED as pump light source since light from the very little zone of LED to all directions scattering, so effective pumping efficiency of led light source will be less than the theoretical pumping efficiency of led light source.Therefore, in the pumped arrangement of the top of optical device, generally do not adopt led light source.
The United States Patent (USP) 6,043,929 that licenses to people such as Delavaux March 28 in 2000 discloses a kind of adiabatic orthoron.In this patent, optical waveguide structure comprises the isolated area of three different in width, that is, the single mode district, the amplification efficient of amplifier is improved in adiabatic region and multimode district thus.But the technology of above-mentioned patent disclosure has adopted side pumping (side-pumping) to arrange that wherein the pump light from pump light source incides in the waveguide through input terminal, therefore produces several shortcomings as described below.
The first, incide at pump light under the situation in multimode district of waveguide, because pump light can not evenly scattering in whole multimode district, so flashlight can not evenly be amplified.
The second, because pump light is input in the multimode district, carry out most amplification therein, after pump light passed single mode district and adiabatic region, a no longer worked to amplification, and therefore the actual strength that amplifies is very weak.
Summary of the invention
Therefore, the present invention carries out in view of the above problems, an object of the present invention is to provide a kind of optical device that improves pumping efficiency, wherein is efficiently absorbed in the gain medium structure below the pump light source from the light of pump light source.
Another object of the present invention provides a kind of optical device, in its structure, incides on the gain media zone from the light of pump light source, and carries out most amplification and can not reduce light intensity in the gain media zone.
According to the present invention, above-mentioned and other purposes can realize that this optical device comprises: matrix by a kind of top pump optical devices is provided; The under-clad layer that on matrix, forms; The gain medium structure that on under-clad layer, forms and excite by absorptive pumping light; And place light source on this gain medium structure, be used for coming the pumping gain medium structure downwards by the light that penetrates from light source, wherein a part of gain medium structure is included in the light source beam spot, and this part has the area bigger than other parts of gain medium structure.
Preferably, the top pump optical devices can further be included in the top covering that forms on the gain medium structure, and this top covering is by being made by the light transmissive material of pump light source radiation.
In addition, preferably, gain medium structure does not have the strong absorbent energy in the signal in band of optical device, but in its all band, has the strong absorbent energy, and gain media can be by a kind of the making in following one group of material: the big molecular matrix of doping excited elements, the silica-based matrix of doping excited elements, the chalcogenide glass matrix of doping excited elements, and the GaN of doping excited elements or GaN base matrix.More preferably, gain media can doped with nano-crystals and excited elements, and most preferably, excited elements can be a rare earth element.
In addition, preferably, pump light source can be LED.
In addition, preferably, gain medium structure can comprise heat insulating part between than large tracts of land part and other parts.
Description of drawings
Above-mentioned and other purposes of the present invention, feature and other advantages will more be expressly understood from the detailed description below in conjunction with accompanying drawing, wherein:
Fig. 1 is the schematic diagram of the operation of explanation conventional top pump optical devices such as optical waveguides amplifier;
Fig. 2 is the schematic diagram according to the optical waveguides amplifier of one embodiment of the present invention; And
Fig. 3 is the schematic diagram that the fiber waveguide width adiabatic change of using in the optical waveguides amplifier of Fig. 2 is described.
Embodiment
Now, before describing preferred implementation of the present invention, the operation of conventional top pump optical devices such as optical waveguides amplifier is described with reference to Fig. 1.
With reference to Fig. 1, on matrix 100, form the under-clad layer of making by silicon 110, on under-clad layer 110, form the sandwich layer of making by the silica-based matrix of doped with nano-crystals and rare earth element.Here, sandwich layer is as waveguide 120.In waveguide 120, form the top covering of making by silicon 130.The wideband light source (not shown) is installed in the waveguide 120, so that make pump light from the light source irradiation to the waveguide on 120 the end face.How the light that incides waveguide 120 produces the electronics and the hole of combination again among the Mi Jingti, come the excitation rare-earth element thus.Incident light is exaggerated in passing waveguide 120 processes from the excited rare-earth element received energy, penetrates from waveguide 120 then.
Hereinafter, with reference to Fig. 2 and 3 optical waveguides amplifiers of describing in detail according to embodiment of the present invention.
Fig. 2 represents the optical waveguides amplifier according to embodiment of the present invention.Here, for describe clear for the purpose of removed top covering.
With reference to Fig. 2, on matrix 100, form the under-clad layer of making by silicon 110, on under-clad layer 110, form the sandwich layer of making by the silica-based matrix of doped with nano-crystals and rare earth element, this sandwich layer is as waveguide 120a.Different with the linear structure of above-mentioned conventional waveguide 120, the structure of waveguide 120a of the present invention has the part in the bundle spot that is included in led light source 150, and this part has the area bigger than other parts.The thickness of abridged top covering is approximately tens microns, and its material can see through the pump light of led light source 150 radiation, thereby makes pump light arrive waveguide 120a.Led light source 150 as pump light source is installed on the top covering of abridged.Led light source 150 can with the distance of the spaced apart appointment of abridged top covering, perhaps contact with the abridged top covering.Have a large amount of pump lights of the waveguide 120a absorption of said structure, and improve the amplification efficient of optical waveguides amplifier from led light source 150 radiation.The conventional side pumping that the led light source 150 that is used for producing the pump light that incides waveguide 120a does not adopt led light source to link to each other with the input terminal of waveguide 120a is arranged, but adopt led light source 150 to be positioned at top pumped arrangement above the waveguide 120a, therefore from the pump light of led light source 150 equably irradiation on the more large tracts of land of waveguide 120a.Thus, amplifying signal ripple equably.In addition, because pump light is directly incident on the more large tracts of land of waveguide 120a, therefore can prevent any reduction of pump light intensities after only passing the top covering with about tens micron thickness.
Fig. 3 is illustrated in the width adiabatic change of the fiber waveguide 120a that uses in the optical waveguides amplifier of Fig. 2.Here, the width adiabatic change of fiber waveguide 120a has been well-known in the fiber waveguide field.The width of fiber waveguide is not suddenly to change, but little by little changes, with the mode characteristic sudden change of the signal wave that prevents to pass fiber waveguide.With reference to Fig. 3, fiber waveguide is divided into narrow with little width (a) and has the wide portion of big width (W).Change width between narrow of fiber waveguide 120a and the wide portion is set at the width that makes fiber waveguide 120a and is tapered at heat insulating part T1 and T2 place.The fiber waveguide 120a that uses in the embodiment of the present invention is processed, make its narrow portion have the little width (a) of 10 μ m, wide portion has the length (L) of big width (W) and the 100 μ m of 100 μ m, and heat insulating part T1 and T2 have the length of 1cm.Change if can prevent to pass the mode characteristic of the signal wave of waveguide 120a by the structure of waveguide 120a, waveguide 120a is not limited to above-mentioned parameter sets so, but can have other various parameter sets.After waveguide 120a made, parameter sets can be determined by the signal wave that passes waveguide 120a.But, in general, according to Simulation result prediction with determine parameter sets, then according to the incompatible manufacturing waveguide of the parameter set 120a that determines.
For the mode characteristic of the signal wave that prevents to pass waveguide changes, can use the area adiabatic change of additive method rather than waveguide.The method that for example is used for adjusting cladding index has been used in the waveguide field continually.
Although disclose preferred implementation of the present invention for purposes of illustration, it will be apparent to one skilled in the art that the various modifications that do not deviate from as the disclosed scope and spirit of the present invention of the appended claims, increase and replacement all are fine.
That is to say that the optical device that the present invention obtains just is not used in the orthoron, but can also be used among the passive PIC (photonic integrated circuits), as optical splitter, optical demultiplexer, perhaps optical multiplexer.
Industrial applicibility
As apparent from the above description, the invention provides the top pump optical that a kind of pumping efficiency improves Equipment wherein, is efficiently absorbed gain media below the pump light from the light of pump light source In the structure.
Claims (6)
1, a kind of top pump optical devices comprises:
Matrix;
The under-clad layer that on matrix, forms;
Gain medium structure that on under-clad layer, form and that excite by absorptive pumping light, described gain media doped with nano-crystals and excited elements; And
Place the light source on this gain medium structure, be used for coming the pumping gain medium structure downwards by the light that penetrates from light source,
Wherein, a part of gain medium structure is included in the light source beam spot, and this part has the area bigger than other parts of gain medium structure.
2, top as claimed in claim 1 pump optical devices further is included in the top covering that forms on the gain medium structure,
Wherein, the material of top covering can see through the light of pump light source radiation.
3, top as claimed in claim 1 pump optical devices,
Wherein, excited elements is a rare earth element.
4, top as claimed in claim 1 pump optical devices,
Wherein, pump light source is LED.
5, top as claimed in claim 1 pump optical devices,
Wherein, gain medium structure comprises heat insulating part having between larger area part and other parts.
6, top as claimed in claim 2 pump optical devices,
Wherein, the end face of pump light source contact top covering.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0012911A KR100475412B1 (en) | 2002-03-11 | 2002-03-11 | Top-pumped optical device and its array |
KR1020020012911 | 2002-03-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1639598A CN1639598A (en) | 2005-07-13 |
CN1275366C true CN1275366C (en) | 2006-09-13 |
Family
ID=27800666
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038057298A Expired - Fee Related CN1275366C (en) | 2002-03-11 | 2003-03-11 | Top-pumped optical device |
Country Status (4)
Country | Link |
---|---|
US (1) | US20050128570A1 (en) |
KR (1) | KR100475412B1 (en) |
CN (1) | CN1275366C (en) |
WO (1) | WO2003076988A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100475410B1 (en) * | 2002-03-13 | 2005-03-10 | 주식회사 럭스퍼트 | Arrayed optical device having enhanced pump efficiency |
KR100458678B1 (en) * | 2002-03-20 | 2004-12-03 | 주식회사 럭스퍼트 | Gain-providing optical power equalizer |
KR100594036B1 (en) * | 2003-12-30 | 2006-06-30 | 삼성전자주식회사 | Optical amplifier, optical module with the same and method for fabricating thereof |
WO2008117249A1 (en) * | 2007-03-26 | 2008-10-02 | Scuola Superiore Di Studi Universitari E Di Perfezionamento Sant'anna | Integrated optical waveguide amplifier or laser with rare earth ions and sensitizer elements co-doped core and related optical pumping method |
KR100808802B1 (en) * | 2007-04-23 | 2008-02-29 | 경북대학교 산학협력단 | Laser device using an inorganic electro-luminescent material doped with rare-earth metal |
CN102684048B (en) * | 2012-05-10 | 2014-04-09 | 清华大学 | Super-fluorescence optical fiber light source based on parallel structure |
CN113109282A (en) * | 2021-05-14 | 2021-07-13 | 浙江大学 | Wide-wavelength-coverage photo-thermal deflection spectrum testing device |
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US3967213A (en) * | 1975-03-05 | 1976-06-29 | California Institute Of Technology | X-ray laser with a single crystal waveguide structure |
US5448586A (en) * | 1993-09-20 | 1995-09-05 | At&T Corp. | Pumping arrangements for arrays of planar optical devices |
WO1996000996A1 (en) * | 1994-06-30 | 1996-01-11 | The Whitaker Corporation | Planar hybrid optical amplifier |
CN1116768C (en) * | 1996-04-12 | 2003-07-30 | 索尼公司 | Image encoder, image encoding method and medium on which image encoding program is recorded |
JPH09288287A (en) * | 1996-04-23 | 1997-11-04 | Hitachi Ltd | Semiconductor light amplifier element |
JP3668556B2 (en) * | 1996-06-13 | 2005-07-06 | ソニー株式会社 | Digital signal encoding method |
JP3754760B2 (en) * | 1996-07-26 | 2006-03-15 | 住友電気工業株式会社 | Optical waveguide type diffraction grating |
DE19637396A1 (en) * | 1996-09-13 | 1998-03-19 | Siemens Ag | Coupling arrangement for coupling waveguides together |
JPH10223976A (en) * | 1997-02-13 | 1998-08-21 | Matsushita Electric Ind Co Ltd | Semiconductor laser |
DE69841897D1 (en) * | 1997-07-25 | 2010-10-28 | Sony Corp | MACHINING SYSTEM, MACHINING PROCESS, SPINDING SYSTEM, SPINDING METHOD, CODING SYSTEM AND CODING METHOD |
US6414998B1 (en) * | 1998-01-27 | 2002-07-02 | Sony Corporation | Method and apparatus for inserting an image material |
US6043929A (en) * | 1998-03-16 | 2000-03-28 | Lucent Technologies, Inc. | Adiabatic waveguide amplifier |
US6236793B1 (en) * | 1998-09-23 | 2001-05-22 | Molecular Optoelectronics Corporation | Optical channel waveguide amplifier |
US6310995B1 (en) * | 1998-11-25 | 2001-10-30 | University Of Maryland | Resonantly coupled waveguides using a taper |
US6222966B1 (en) * | 1998-12-29 | 2001-04-24 | Lucent Technologies Inc. | Adiabatic Y-branch waveguide having controllable chirp |
US6370297B1 (en) * | 1999-03-31 | 2002-04-09 | Massachusetts Institute Of Technology | Side pumped optical amplifiers and lasers |
US6698246B1 (en) * | 1999-10-18 | 2004-03-02 | Corning Incorporated | Method for making nanocrystalline glass-ceramic fibers |
US6529657B2 (en) * | 2001-02-23 | 2003-03-04 | Keopsys, Inc. | Angle selective side-pumping of fiber amplifiers and lasers |
US6529318B1 (en) * | 2001-08-30 | 2003-03-04 | Np Photonics, Inc. | Total internal reflection (TIR) coupler and method for side-coupling pump light into a fiber |
US6778319B2 (en) * | 2001-09-10 | 2004-08-17 | Np Photonics, Inc. | Side-pumped multi-port optical amplifier and method of manufacture using fiber drawing technologies |
WO2003058776A1 (en) * | 2002-01-08 | 2003-07-17 | Photon-X, Inc. | Optical waveguide amplifiers |
US7126750B2 (en) * | 2002-07-08 | 2006-10-24 | John Gilmary Wasserbauer | Folded cavity semiconductor optical amplifier (FCSOA) |
-
2002
- 2002-03-11 KR KR10-2002-0012911A patent/KR100475412B1/en not_active IP Right Cessation
-
2003
- 2003-03-11 WO PCT/KR2003/000467 patent/WO2003076988A1/en not_active Application Discontinuation
- 2003-03-11 CN CNB038057298A patent/CN1275366C/en not_active Expired - Fee Related
- 2003-03-11 US US10/507,270 patent/US20050128570A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20050128570A1 (en) | 2005-06-16 |
KR20030073374A (en) | 2003-09-19 |
CN1639598A (en) | 2005-07-13 |
KR100475412B1 (en) | 2005-03-10 |
WO2003076988A1 (en) | 2003-09-18 |
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