CN1270357C - Plasma processing device and plasma processing method - Google Patents

Abstract

The present invention relates to a processing device and a method for plasma. The deviation of processing results can be monitored according to the variation of a device state, and simultaneously, a restoring state can be detected under the condition of varying the device state so as to judge whether the device is processed or not. The device is provided with a control component (10) and a processing room (1) for carrying out plasma processing for a wafer (2), wherein the processing room (1) is provided with plasma state detection devices (8 and 9) for detecting a processing state in the processing room and outputting plasma states of a plurality of output signals; the control component (10) stores result information processed by the wafer, and processes plasma state detection data of the previous wafer and a database (13) of a relational expression associated to both the result information and the plasma state detection data; an arithmetic component (11) is used for obtaining processing room state detection results by the plasma state detection devices and calculating predicted values of processing results by the relational expression, and a monitoring component (12) is used for evaluating the state of the processing room according to the predicted values of processing results, which are calculated. After the wafer is processed, the predicted values of processing results are calculated according to the relational expression so as to monitor the state of the processing room according to the predicted values.

Description

Plasma processing apparatus and method of plasma processing

Technical field

The invention belongs to semiconductor fabrication.Especially, relate in semiconductor-fabricating device wafer carried out plasma treatment in, be used for realizing the plasma processing apparatus of repeatability of result and the method for plasma processing of this plasma processing apparatus.

Background technology

Be accompanied by the highly integrated of semiconductor element in recent years, circuitous pattern develops towards the direction of granular, and therefore desired processing dimension and precision are all more and more stricter.For example, even the deviation of the processing dimension about below the 10nm all might be brought the defective of device.In this case, the repeatability of the treatment state in the plasma treatment just becomes very important.

That is, adhere to and remain under the situation of process chamber inwall of plasma processing apparatus, the treatment state of wafer is changed and bring influence, can not keep the repeatability of treatment state to result at reaction product with accumulation property.Therefore, under the situation that the amount of residual reaction product is all different in each process chamber of handling, processing result also can be different.Special under the situation of having removed reaction product after the plant maintenance, very big deviation can take place with comparison processing result before the plant maintenance.

As the method for such plasma treatment result's deviation being carried out alignment processing, handle the replying state that carries out process chamber by so-called seasoning at present.This method at first utilizes plasma to cleaning in the process chamber.Then, by under the condition close, simulated wafer being implemented etching, the process chamber inwall is adjusted to the approximate processed continuously state that carried out with etching products.(for example, opening the 2002-110642 communique) with reference to the spy

In addition, also in the plasma chamber of research, various detectors are installed,, are detected the detection method of the variation of treatment state in the article on plasma body processing unit by detecting the variation of a plurality of monitoring value at plasma processing apparatus.Disclose in the prior art in the method for the treatment state of such supervision plasma processing apparatus, used the example (for example, with reference to TOHKEMY 2002-25981 communique) of resolving corresponding to the multivariable of the detection data of a plurality of detectors.

But, in open the example that the 2002-110642 communique discloses by above-mentioned spy, do not consider by seasoning and handle when carrying out the replying state of process chamber that seasoning is handled and when finished, and promptly considers to detect the dry concluding time.Short words drying time reaction product deficiency then longly on the contrary then can be adhered to too much reaction product, can not obtain desirable processing result.As a result, try out various drying conditions and carry out actual product processing, promptly decide drying condition with trial-and-error method.Be decided to be the wafer and the extremely long time of cost that only just must have the decision condition to use to condition like this.Like this condition of decision under the situation that has produced the state different with the unit state that determines drying condition, for example, resembles under the situation of having replaced behind some parts, because this is not common situation, so the situation of the condition that must must make new advances is again arranged.

And in the example of opening the disclosure of 2002-25981 communique by the spy, detect a plurality of monitoring value, and further monitor by the variation of using variable to resolve unit state, but the variation meeting of not considering the unit state that detects brings any influence to processing result.That is, should existence can bring the detected value of influence and can not bring the detected value of influence, when having detected the unit state variation, can not be bound to bring influence to processing result.Even bring influence, be necessary also to consider which kind of degree change detected value has to make processing result produce which kind of degree change.

Summary of the invention

In view of the above problems, purpose of the present invention just provides a kind of plasma processing apparatus and processing method: can monitor the deviation that changes the processing result that causes owing to the unit state of plasma processing apparatus, simultaneously, under the situation that resembles big variations of unit state such as plant maintenance etc., can detect the recoil state of device, and judge and to handle.

For achieving the above object, the present invention is provided with the plasmoid detection means in the process chamber of plasma processing apparatus, in the control assembly of processing unit with database form storage in the past the processing of wafers object information and the plasmoid when handling this wafer detect data, and the relational expression of expression both sides relation, after processing of wafers, plasmoid during by processing of wafers detects data and the incidence relation formula in the database of being stored in calculates the predicted value of result, utilizes the predicted value of the result that calculates to monitor processes chamber state.

In addition, in the present invention, plasmoid during with the treatment product substrate detects data and gets up as database storage with the relational expression related with the product treatment object information, after product treatment, not only calculate product treatment result's predicted value by plasmoid detection data and above-mentioned incidence relation formula, the relational expression that plasmoid that also will be when the treatment of simulated substrate detects data and the result of the product treatment implemented with the same time is associated is as database storage, detect data and incidence relation formula by drawing plasmoid, can calculate the predicted value of the result when carrying out product treatment by the discharge of simulation substrate.

As mentioned above, in the present invention, owing to the result predicted value that can calculate when carrying out product treatment, so just can judge whether product processing is to carry out under the unit state that can draw desirable shape.

In addition, because database storage has this data of installing handled every kind of product, so can achieve the goal to better effects if.

In addition,, surpassed under the situation of the set value that sets in advance in the predicted value of the result that calculates by the present invention, by notifying such information, just can be because unusual defective the preventing trouble before it happens that produces of device.

Description of drawings

Fig. 1 is the synoptic diagram of the plasma processing apparatus with unit state surveillance of explanation first embodiment of the invention.

Fig. 2 is the computing flow process of explanation first embodiment of the invention.

Fig. 3 is that the operation result of explanation first embodiment of the invention shows example.

Fig. 4 is the computing flow process of explanation second embodiment of the invention.

Fig. 5 is that the operation result of explanation second embodiment of the invention shows example.

Fig. 6 is the computing flow process of explanation third embodiment of the invention.

Fig. 7 is that the operation result of explanation third embodiment of the invention shows example.

Fig. 8 is the figure that the product treatment process of a plurality of processing unit of the present invention is used in explanation.

Fig. 9 is the perspective cross-sectional slice of the Semiconductor substrate of explanation four embodiment of the invention.

Figure 10 is the computing flow process of explanation four embodiment of the invention.

Figure 11 is that the operation result of explanation four embodiment of the invention shows example.

Embodiment

With reference to the accompanying drawings, describe embodiments of the invention in detail.

Utilize Fig. 1～Fig. 3 that first embodiment of the present invention is described.Fig. 1 is the figure that explanation has the plasma processing apparatus of unit state surveillance.Plasma processing apparatus of the present invention is made of process chamber 1, gas supply device 6, gas exhausting device 7 and apparatus control portion part 10.Be provided with test material platform 4, plasma producing apparatus 5, plasmoid checkout gear 8,9 in the process chamber 1; Apparatus control portion part 10 is provided with signal operation parts 11, unit state detection part 12 and database 13.

Process chamber 1 has supplies with the gas supply device 6 of handling gas, the gas exhausting device 7 of discharging processing gas and having the function of the indoor pressure of control and treatment.In process chamber, also be provided with the test material platform 4 of the test material 2 of placing process object, in addition, also have in the process chamber with the plasma producing apparatus 5 that generates plasma 3.Test material 2 is exactly a wafer in semiconductor-fabricating device, and test material 2 is glass substrate for example in the LCD manufacturing installation.

Plasmoid checkout gear the 8, the 9th for example is arranged on to plasma producing apparatus 5 current detector or voltage detector on the approach of electric power is provided, perhaps can also be current/voltage phase difference detector, electric power progressive wave detector, reflected wave detector or impedance monitors etc.Or, the spectroscope of the light that plasma sent that detection generates by plasma producing apparatus 5 in process chamber 1.The light optical splitter also can be the detector of the light of the single wavelength of extracting resemble the monochromator, but preferably resembles the detector of a plurality of signals of output the optical splitter of the spectrum that output decomposed wavelength.Further, plasmoid checkout gear 8,9 also can be a device in addition, for example is arranged on gas flowmeter in the gas supply device 6, is arranged on mass spectrometer in the process chamber etc.These condition checkout gears are at the signal of several sampling times output indication device states of time of each certain intervals or setting.

In plasma processing apparatus control assembly 10, be provided with: the signal operation parts 11 of handling the signal of sending from plasmoid checkout gear 8,9; Unit state to the state of outside notifying device monitors parts 12; At each product device architecture of handling in this device, with the plasma treatment result in past, corresponding to this result wafer is implemented plasma treatment the time plasmoid detect data, plasma treatment result, represent the database 13 that the relational expression of the relation between processing dimension and the etch-rate etc. and plasmoid data for example stores.

The signal that plasmoid checkout gear 8,9 is sent is a plurality of signals mostly.For example, under the situation of the optical splitter of the luminescent spectrum that wavelength has been decomposed in output as described above, the unit state signal of each sampling time output has 1000 to 2000.In order to use the relational expression relevant to represent so a plurality of signals with processing result, utilize the multivariable of main component parsing etc. resolve with filtering signals for a few signals for well.

Below, with Fig. 2～Fig. 3 supervision example to CD size (Critical Dimension, typical sizes) is described.Fig. 2 has represented the flow process of the computing carried out in the present embodiment, and what Fig. 3 represented is the demonstration example of operation result.In database 13, store about all processed in process chamber 1 product categories in the past the plasmoid the during etching in the certain hour detect data and as the CD size value of processing result, and the incidence relation formula (modular form) of two data.Under the processed situation of a certain product (being called product A) at this, signal operation parts 11 read that plasmoid detects data and as the relational expression of the CD size value of processing result, when ongoing etch processes finishes, calculate the CD size by plasmoid detection data and modular form that plasmoid checkout gear 8,9 is sent.

For example, for the processing of the electrode of grid wiring, because the size of wiring width has a direct impact the responsiveness of equipment, so correct size management must be arranged.Usually, the scanning electron microscopy (CD-SEM) used by measurement size after etching of CD size is implemented to check.Under the situation about checking with CD-SEM, handle a desired time of wafer from CD-SEM and consider, to all processing wafer inspection be impossible, generally be in several groups, a ratio of checking being carried out.For example, after the CD-SEM inspection of implementing at interval by several groups once, some has taken place at once and has changed in the plasmoid of device, and the CD size has taken place under the unusual situation, do not take into account till the next dimensional measurement inspection and carry out product treatment singularly, will produce substandard product.Especially, large-sized wafer price costliness now, above-mentioned defective item can bring the infringement of huge number.

By the present invention, as shown in Figure 3, can shows wafer handle the back by calculating the CD size value of being predicted.For example, limiting value 14 is set for the CD size, gave a warning in 15,16 o'clock, just can suppress the infringement that defective item brings to greatest extent in the situation of the value of overstepping the extreme limit 14.In addition, by warning plant maintenance is carried out at reasonable time.The output form of warning can be zero sound of buzzer etc., also can be the demonstration on guidance panel, or the demonstration on the personal computer of device operator etc.

Also can be according to the value of overstepping the extreme limit several times continuously, or the counts of warning is carried out classification.For example, the value of overstepping the extreme limit once, just returned during processing of wafers next time and carried out slight warning under the situation in the permissible range value and continue processing, and at 3 times continuously under the situation of the value of going beyond the limit of, just forbid the processing and implementation plant maintenance, or the counts of the value of overstepping the extreme limit surpassed certain value of setting with regard to facilities and equipments maintenance etc., can use.Also have, the relational expression in the database, preferably certain hour just upgrades and uses new data.

Below, with Fig. 4～Fig. 5 second embodiment of the present invention is described.The reaction product that the wafer sheet number that Etaching device is handled produces during etching and processing at most will increase gradually attached to the adhesion amount on the device internal face.The adhesion amount increase will form certain thickness, attachment also will take place peel off and drop to the thing that makes the figure short circuit on the wafer.For the such thing of alignment processing, will regularly device be opened, water and organic solvent are removed attachment, implement the washing and cleaning operation of so-called wet cleaning.Behind wet cleaning, adsorbing hydrone on the device internal face attachment is being removed fully, make the device inner wall surface become activated state.As its result, hydrone is discharged in the atmosphere of process chamber and the absorption and the break-off of attachment become very remarkable, and and then CD size and etch-rate are counted change along with the sheet of handling phenomenon can take place wet cleaning.Processing dimension is trickle, and the influence that such changing factor produces is just big more.The present invention is effectively to the supervision of variable condition, can be used for the processing behind the wet cleaning is judged.Present embodiment has illustrated situation about being applicable to the supervision of etch-rate.Fig. 4 represents is the flow process of the computing carried out in the present embodiment, and what Fig. 5 represented is the demonstration of operation result.

Store in database 13, the plasmoid when in the past the simulation substrate that is used for measuring etch-rate being carried out etching detects data and as the etch-rate value of processing result, and both relational expression (modular form) that obtains from two data.

Behind wet cleaning in order to confirm that etching performance carries out etching to the simulation substrate that is used for measuring etch-rate, read the plasmoid detection data of above-mentioned simulation substrate and the relational expression of etch-rate at these signal operation parts 11, data and the modular form sent according to condition checkout gear 8,9 when the etch processes of simulation substrate finishes are calculated etch-rate.Usually, the measurement of etch-rate is to carry out meter by the film that the film thickness measuring device stays after to etching to calculate.

As simulated wafer, owing to be used for measuring the wafer price height of speed, be to handle in the ratio of getting a slice in the array so be used for measuring the wafer of speed, generally also the nude film of Si is handled therebetween.Although be every several Si nude films, the simulated wafer that insertion a slice measurement speed is used carries out etch processes to carry out the measurement of speed, to drawing rate measurements, can not carry out product treatment till performance recovery obtains confirming.The speed of measurement result is during if not desirable value, will be once more implements to handle to having inserted the Si nude film group of measuring the simulated wafer that speed uses, measures once more.

In speed measurement, to thickness testing fixture transfer wafers and needed time of inspection etc., be for a long time.Arresting stop can reduce productivity ratio greatly in order to carry out such inspection.By the present invention, as shown in Figure 5, can finish the calculated value that the back shows etch-rate at once in etching.Point on the curve among Fig. 5 is exactly to predicting the outcome that speed has been calculated, the part shown in the middle arrow 18 be to Si naked substrate carry out etching part.For example, the value 17 of the etch-rate that certain can treatment product is set, notifies away, just can realize high efficiency production by will under the situation in entering the value of setting 17 scopes, just processing such information.The method of the information that notice can be processed with above-mentioned the same, can be the sound of buzzer etc., also can be the demonstration on the guidance panel, or the demonstration on the personal computer of device operator etc.

In addition, the method for such supervision change in etch rate is also effective to the supervision of installing performance change under the long-term operating position.If the simulated wafer that measurement speed is used carries out etching, owing to do not implement the thickness inspection and can predict etch-rate yet, so certain hour compartment of terrain, inferior as one day 4, the simulated wafer that measurement speed is used is handled, then just can could have been judged device performance, processing in that time.Under the situation that can not get desirable etch-rate value, owing to just can facilities and equipments safeguard that all can be used as the means of learning suitable preventive maintenance time at once.

Below, with Fig. 6～Fig. 7 the 3rd embodiment of the present invention is described.As described in second embodiment, behind wet cleaning, owing to removed the attachment on the chamber walls fully, wall surface becomes state active, that the etching product obviously can adsorb, break away from.Thus, and then after the wet cleaning, can see that the CD size is relatively thicker mostly, along with the increase of handling quantity can attenuate, stable tendency.Because the size of the wiring width of the electrode of grid wiring processing has a direct impact the responsiveness of equipment,,, will become defective item if can not be processed into needed size so the management of correct size is necessary.Therefore, behind common wet cleaning, implement the simulation substrate of specified quantity is carried out the adaptability running that is called as seasoning of etch processes.

After the dry process of specified quantity, a flake products is carried out etching, and carry out dimensional gaughing by CD-SEM.If the size of regulation, then can begin product treatment,, just carry out dry process once more if not the size of regulation, promptly continue the simulation substrate of specified quantity is handled, a flake products carried out etching, dimensional gaughing processing, till the size that becomes setting.Owing to till drawing check result, can not handle, so can use a large amount of time.In addition, in a single day if do not become the size of regulation, product just has been wasted.

Present embodiment is effective to the supervision of such CD size, by monitoring that the result processes judgement.Illustrate with present embodiment and to monitor by CD and to process the example of judgement.What Fig. 6 showed is the flow process of carrying out computing, and Fig. 7 is the demonstration example of operation result.Implement the product (for example product A herein) that the CD size monitors, in during certain, in the close moment in the moment that some flake products wafers are carried out etch processes, use and the similar condition of the processing of product A implemented processing to the simulation substrate, detect data by the CD size of product processing of wafers and the plasmoid of having implemented the simulation substrate of etch processes in the close moment, extrapolate both relational expressions (modular form), it is stored in the database 13.The so-called close moment preferably handles continuously, but several hours deviation is no problem.

After the dry process, the simulation substrate is carried out etching, promptly carry out dry process, at this, read the CD size of the product of above-mentioned past during certain and detect relational expression between the data in the plasmoid that the moment close with the etched moment of product implemented etched simulated wafer by signal operation parts 11.Each has been implemented the wafer of dry process, and when etch processes finished, the data computation of utilizing modular form to be sent here by plasma checkout gear 8,9 went out the CD size.

Carrying out etched is the simulation substrate, but since be used in and detect the simulation substrate of plasmoid in the cycle about the same CD size through the product of etch processes calculate relational expression, so the calculated value that calculates is in that predicted value of the result during treatment product constantly.The preferably the same membrane material of simulation substrate with product, but carry out at the polysilicon such to gate electrode under the situation of etch processes, owing to be and naked silicon materials similar, so plasmoid detection data are very close, so can calculate fully.

That is, by present embodiment, product is not carried out etching, suppose to utilize the simulation substrate now, product A is carried out etching, the prediction of its CD value will for example show as shown in Figure 7.Say further,, do not carry out the inspection of CD-SEM and also can judge and to process by the prediction processing result.For example, setting can be carried out the CD size value 20 of product treatment, and 19 situation that just can be in the scope of set point 20 sends a notice and can process.As mentioned above, check that with CD processing judgement compares the raising that production efficiency is led to a leap with the dry process of passing through up to now.

Such CD change in size method for monitoring, can behind wet-cleaning, implement incessantly, with the unmatched product of device architecture, for example under the situation of behind the very little product of processing etching area the very big product of etching area being processed, also can implement when sharply changing for the amount that in process chamber, makes reaction product.This method is also effective in this case, as mentioned above, by the naked silicon of analog equipment is carried out etching, predicts the result of different components constructed products after etched, promptly predicts the CD size, just can judge and could process.So, unactual product is carried out etching, judging by etching simulation substrate could method for processing, all highly beneficial to time, cost.

Because product is constantly processed, and the device inwall adheres to deposit and parts constantly are consumed, so plasmoid is changing, result is also changing.So, as the 3rd embodiment, predict according to the plasmoid of simulation during substrate processing that the result of product wafer just becomes and be necessary.Through the long period, promptly caused continuous consumption attached to increase of the deposit on the wall and parts, then corresponding to prediction, the time of product processing of wafers and simulation substrate processing is preferably approaching as far as possible.In the present invention owing to will use and be stored in data of database in advance, thus after product treatment and then or before, preferably implement simulation process.

But, also not necessarily leave no choice but be after product treatment and then or before, according to desired product precision, the time difference that is allowed also changes to some extent.In a word, be wall state and parts consume corresponding to a wafer is carried out etching intensity of variation, the problem of the variation sensitivity that changes corresponding to device as object.Stable product, promptly electrical characteristic changes less product and electrical characteristic changes big product along with change of shape along with change of shape, and its time that changes is different.

In fact, the wide polysilicon of 0.18 μ m is being carried out under the etched situation, can both predict accurately by tens hours in several hours.

In the present embodiment, the wide polysilicon of 0.18 μ m is being carried out under the etched situation, handle from the product wafer in, can predict ± scope of 5nm about the ten hours times of simulation substrate till handling.The problem of this intensity of variation that wall state and parts corresponding to a wafer is carried out etching are consumed, the variation sensitivity that changes corresponding to the device as object is also effective, so requiring under the very strict situation of shape invariance, just be necessary to use database in the more approaching time.

In addition, the method for such supervision CD change in size is very effective to the situation of a small amount of multi-assortment production mixed processing.For example, as shown in Figure 8, under the situation that the product A that dimensional accuracy is different, B, C handle, product A has just taken place in same device, C can process, but product B has exceeded the state that the accuracy rating that allows can not be handled.For fear of the generation of defective thing, can interior at certain time intervals usually etch-rate inspection and the CD dimensional gaughing of implementing as described above carry out the unit state supervision to processing.But so inspection will be used the high inspection wafer of price, in addition owing to the review time reduces once the long production efficiency that makes, so only to the very strict product of required precision, the i.e. inspection that can product B enforcement process.That is to say, checking under the underproof situation,, will stop to produce and carry out plant maintenance also no matter also have product A, C to produce.At this,, but under the situation that also has a lot of product A, C to process, the integral production ability of production line is reduced if the processing of product A, C less then no problem.

Under these circumstances, if carry out the line formula operation that to judge of not processing of the present invention, just high efficiency production management can have been implemented.For product A, B, C, if the plasmoid that stores the simulation substrate in the database is checked the relational expression of data and processing result CD size value, then, just can judge and to have processed that product by at this moment the simulation substrate being carried out etching.If product B can not be processed, then only show product B forbid processing, with product B be sent to other the device, proceed the production of product A, C.For example, device 1, device 2, the device 3 that can handle are equally arranged on the production line, checkout gear 1 and install 3 treatment state, judge under the situation that product B can not handle, arresting stop 1 and install 3 processing and carry out plant maintenance, then all at the moment products have all concentrated on the device 2, and production capacity significantly descends.Under these circumstances, by can product processed A, C preferentially be sent to device 1, device 3 goes, and operative installations 2 treatment product B just can avoid the stagnation of producing.Reduce and device capability has the plant maintenance of carrying out device 1, device 3 in more than needed again just passable in product treatment.So, just can be, and do not produce under the underproof situation in the inspection of not carrying out the product treatment result, carry out corresponding to performance at that time that suitable device is selected and production line has moved.

In addition,, the example of the result that is applicable to product has been described at this, but effective too to Performance Evaluation with the result of simulated wafer.As to described in the explanation of second embodiment, in order on the Si substrate, to form the film the same, be expensive with the simulated wafer of wafer as the measurement etch-rate with product.Over a period to come, carry out the close moment in the moment of etch processes at the wafer that multi-disc measurement etch-rate is used, enforcement is to the processing of more cheap for example naked silicon wafer, detect data according to plasmoid that utilize to measure etch-rate that wafer that etch-rate uses measures and the naked silicon of implementing etch processes in the close moment, extrapolate both relational expressions (modular form), be stored in the database 13.By preparing such modular form, even the measurement speed of not using high price also can be judged performance by cheap naked silicon is handled with the simulation substrate.That is, utilize more cheap simulation substrate, just can access and second effect that embodiment is same.

Below, by Fig. 9～Figure 11 the 4th embodiment of the present invention is described.Present embodiment explanation monitors the example of change in etch rate, and it is effective especially to monitoring that gate electrode adds the variation of substrate oxide-film etch-rate in man-hour.Fig. 9 is for the gate electrode processing perspective cross-sectional slice of present embodiment is described.At this, the example that forms gate electrode once with the monofilm of polysilicon is described.In Fig. 9, the 21st, silicon substrate, the 22nd, on substrate 1, wait the polysilicon film gate electrode of formation by CVD (Chemical Vapor Deposition).The 23rd, grid oxidation film, the 24th, by etch processes to machining area carry out opening photoresist.

Gate electrode is carried out etching, be not under same condition, polysilicon 22 to be carried out etching once usually, but implement: 1) apace polysilicon is etched into the main etching step about remaining tens of nm by following steps; 2) with polysilicon 22 complete etched steps, than low to the etch-rate that substrate gate oxide-film 23 carries out, even etched step is adjusted in being called as that promptly grid oxidation film also is difficult to be etched to when the etching to polysilicon finishes by main etching step; 3) vertical dislocation and the residue to substrate carries out etching, and lower being called as of etch-rate to substrate gate oxide-film 23 just finishes etched step.

Above-mentioned 2) and 3) condition be very little to the etch-rate of oxide-film, because the reduced thickness that will make object grid oxidation film 23 is to the degree of for example counting nm～1nm, speed improves a bit so even etch-rate changes very little, will not make grid oxidation film 23 etched and form through hole on below the Si substrate in the part, so-called flaw phenomenon takes place.Because above-mentioned 2) and 3) condition be that etch-rate to grid oxidation film is low and to the speed height of Si, then scrape that to make equipment can not normally move generation into Si substrate 21 defective in the position below grid oxidation film shown in 25 so grid oxidation film one produces flaw.

Because that the flaw of such grid oxidation film produces is defective, usually with certain hour at interval, for example one day a slice etc. is checked the speed of oxide-film in order to prevent.The speed inspection is by piling up certain thickness silicon oxide film on the Si substrate, and actual etching implements and the substrate that uses such measurement speed to use carries out.For example, aperture time between speed inspection and speed inspection, variation has taken place in the plasmoid of device, and makes under the situation of speed rising, will not notice that the flaw of grid oxidation film has carried out product treatment unusually till the subrate inspection is implemented down.The result has produced substandard product exactly, produces tremendous loss.For the substrate of speed inspection usefulness,,, check that the wafer of usefulness is also very expensive in addition so be expensive owing to be necessary on the Si substrate, to form silicon oxide layer.Promptly, such speed inspection is not implemented in the variation of grid oxidation film etch-rate, monitor and detect data, then use under the prerequisite of substrate, do not produced the effect of defective item in the measurement speed that can not consume high price by the plasmoid between product treatment.

Promptly, because to being arranged on cutting quarter of producing when polysilicon 22 on the grid oxidation film 22 carries out complete etching, can produce the such flaw of pin hole in the part, and on as the Si substrate 21 of its substrate, produce flaw 25, detecting because that flaw produces is defective, is unusual difficulty and the product of reality is carried out speed measurement.According to the present invention, be used as processing the index that could judge by the etch-rate that will simulate substrate and use, just can the generation of pin hole not measured and judge.

The feature of this embodiment is not assess as concrete quantitative values with etch quantity as described above and etch-rate, but just effective under situation about assessing as index with the etch quantity and the etch-rate of analog equipment, and merely speed is predicted it is its another effect.

Like this, just be not applied in grid oxidation film, also effective with the rate prediction of the film of placing up and down that is processed as purpose to the rate prediction of the rate prediction of mask against corrosion and hard mask etc.

The etch target film is being carried out the etched while, certainly also to the meeting etching mask.Against corrosion, hard mask material and etch target film are selecteed with certain proportion, promptly set the condition of speed of the etch-rate＜object film of mask, but the etch-rate of mask is 0 to be difficult.At this, change in etch rate and speed one rises, and will cut the mask at quarter, and the shape of mask is shortened becomes the shape that flange is cut, and the flange that produces polysilicon is cut, and can bring bad influence to the equipment characteristic.In this case, etching mask is not a purpose, and mask is cut to have carved as a result.The etch quantity index of mask is exactly that the wafer that the speed of the mask material of measuring present use is used is carried out etching and the variation of the etch-rate that causes, promptly is necessary to process judgement with etch quantity, the etch-rate of assessment analog equipment as index.

Monofilm as described above is fairly simple, and the accumulating film of tungsten/polysilicon is then complicated more.Promptly because the etching condition of tungsten is different with the etching condition of polysilicon, each etch-rate is also different, in common inspection step, be under etching condition (both carry out etching to tungsten, polysilicon) with certain hour at interval or waits the speed inspection of carrying out mask once a day.But under the unusual situation of speed, having unclear is the unusual shortcoming of that condition.Under situation of the present invention, by tungsten, polysilicon being carried out etching and rate measurements, plasmoid are stored in the database, can be under the situation of etch-rate measure analog product predicted velocity, and can repair unusual at once.Can also obtain other effect by present embodiment.

The display result example of operation result at Figure 10 of the computing flow process of expression present embodiment is expressed in Fig. 1.With this product close moment in the etched moment of wafer of product A for example, to the adjustment etching step of product A or finish under the similar condition of etching step, implement to handle with substrate to having formed on it, carry out the measurement of etch-rate with the measurement speed of the film of the same material of grid oxidation film.As above-mentioned embodiment, the so-called close moment preferably handles continuously, but the deviation of a few hours is no problem.In addition, not necessarily there is no need with adjust etching step or finish etch processes the same, amplification as the oxide-film rate variation, under the condition that oxide-film speed uprises to a certain extent, use is carried out etched result to the simulation substrate, computation rate is just processed judgement afterwards easily for a long time.This is because because the etch-rate of the oxide-film of adjustment etching step that has problems and end etching step is very little, be difficult to see and change.

In database 13, the plasmoid when storing etch-rate data when measuring simulation substrate that speed uses and carry out etching, treatment product wafer detects the relational expression (modular form) of data and two data.The plasmoid of product wafer detect data to as if polysilicon is carried out etching finishes the plasma of back when grid oxidation film is carried out etching, use data after the polysilicon etching finishes when adjusting etching step, adjust the data before etching step finishes or finish etched condition data and make modular form.Under the processed situation of product A, relational expression between the etch-rate data of signal operation parts when database is read that plasmoid detects data and the simulation substrate carried out etching, when the etching of product A finishes, the data that the relational expression article on plasma body condition checkout gear of reading from database according to the signal operation parts 8,9 is sent are calculated, and carry out the calculating of etch-rate.With this value of calculating as with the adjustment etching step of product A or finish under the close condition of etch processes etch-rate when being formed with simulation substrate with the film of the same material of grid oxidation film on it and carrying out etching.

So,, the simulation substrate is not carried out etching, as shown in Figure 11, can demonstrate desired value by the etch-rate when calculating measure analog substrate speed by the present invention.For example, simulate substrate etch rate calculations value and be set to higher limit, give a warning in beyond the value of setting 24 scopes, just the infringement that defective item can be brought is suppressed at Min., also can carry out plant maintenance in the suitable time.The same with first embodiment, to the value of overruning continuously repeatedly, or according to the warning number of times and the situation that classification is handled is also effective.For example, situation about once returning again after the value of going beyond the scope 27 times as slight warning, is proceeded processing, and 3 situations 28 times of the value of overruning are continuously forbidden the processing and implementation plant maintenance.Perhaps also can be the value of setting, surpass then facilities and equipments maintenance etc. with the number of times of the value of overruning.

As mentioned above, by the present invention, use processing of wafers object information in the past, the plasmoid when this wafer is handled to detect data and relational expression between the two, can finish the predicted value that the plasmoid detection data of back when finishing according to processing and relevant relational expression calculate result in processing of wafers, just can discover earlier thus because that the variation of treatment state causes is defective, will be reduced to bottom line owing to the defective infringement that brings that the variation of treatment state not to be noted causes.Can also obtain carrying out the effect of plant maintenance in the suitable time.

In addition, by the present invention, detect data according to the plasmoid that obtains that the simulation substrate is discharged, can calculate the result predicted value when carrying out product treatment, product is not handled and checked just can judge to obtain the treatment desired result.Thus, can access and do not waste product, reduce to check stand-by period of causing, reduce the effect of checking step.

Claims (10)

1, a kind of plasma processing apparatus has control assembly and wafer is implemented the process chamber of plasma treatment, it is characterized in that:

Above-mentioned process chamber has treatment state that detects inner treatment chamber and the plasmoid checkout gear of exporting a plurality of output signals;

Above-mentioned control assembly has following function:

Processing of wafers object information before the storage, the plasmoid during with this wafer of pre-treatment detect the relational expression of data and both associations;

Calculate the predicted value of result according to the processes chamber state testing result that draws by above-mentioned plasmoid checkout gear and above-mentioned relation formula; And

The predicted value of the result that utilization calculates is come the state of evaluation process chamber.

2, plasma processing apparatus according to claim 1 is characterized in that:

To being used to make the wafer enforcement processing of goods, the processing of wafers object information of the manufacturing goods before the storage of above-mentioned control assembly, the plasmoid when being used to make the wafer of goods with pre-treatment detect the relational expression of data and both associations, and detect the predicted value that data and above-mentioned relation formula calculate result according to the plasmoid that the plasmoid checkout gear draws when processing is used to make the wafer of goods, utilize the predicted value of the result that calculates to come evaluation process chamber state.

3, plasma processing apparatus according to claim 1 is characterized in that:

The simulation substrate is implemented to handle, simulation substrate processing object information before the above-mentioned control assembly storage, the plasmoid in the time of should simulating substrate with pre-treatment detect the relational expression of data and both associations, and detect the predicted value that data and above-mentioned relation formula calculate result according to the plasmoid that the plasmoid checkout gear draws when the treatment of simulated substrate, utilize the predicted value of the result that calculates to come the state of evaluation process chamber.

4, plasma processing apparatus according to claim 1 is characterized in that:

Be used to make close time of time of the wafer of goods with processing, the simulation substrate is implemented to handle being used to make under the approximate condition of the wafer of goods with processing, the control assembly of processing unit is stored the processing result information of this simulation substrate, plasmoid when processing is used to make the wafer of goods detects the relational expression of data and both associations, and detect data and above-mentioned relation formula when processing is used to make the wafer of goods according to the plasmoid that the plasmoid checkout gear draws, calculate the predicted value of having handled the result of simulation substrate in the moment that detects plasmoid, the predicted value of the result that utilization calculates is come the state of evaluation process chamber.

5, according to claim 1 each described plasma processing apparatus to the claim 4, it is characterized in that:

Predicted value in the result of calculating according to plasmoid testing result and above-mentioned relation formula exceeds under the situation of the set value that sets in advance, with corresponding information notice or show.

6, according to claim 1 each described plasma processing apparatus to the claim 4, it is characterized in that:

Every kind of wafer that is used to make goods for processed in this plasma processing unit all has result and above-mentioned relation formula.

7, the method for plasma processing in a kind of plasma processing apparatus, this plasma processing unit has control assembly and wafer is implemented the process chamber of plasma treatment, above-mentioned process chamber has treatment state that detects inner treatment chamber and the plasmoid checkout gear of exporting a plurality of output signals, and above-mentioned control assembly has following function: the processing of wafers object information before the storage, the plasmoid during with this wafer of pre-treatment detect the relational expression of data and both associations; Calculate the predicted value of result according to the processes chamber state testing result that draws by above-mentioned plasmoid checkout gear and above-mentioned relation formula; And the predicted value of utilizing the result calculate comes the state of evaluation process chamber, it is characterized in that:

To being used to make the wafer enforcement processing of goods, being used to before the above-mentioned control assembly storage made the processing result information of the wafer of goods, plasmoid when being used to make the wafer of goods with pre-treatment detects the relational expression of data and both associations, and detect the predicted value that data and above-mentioned relation formula calculate result when processing is used to make the wafer of goods according to the plasmoid that the plasmoid checkout gear draws, the predicted value of the result that utilization calculates is come evaluation process chamber state, predicted value in the result of calculating surpasses under the situation of the limiting value that sets in advance, and does not carry out the processing that the wafer of goods is made in later being used to.

8, the method for plasma processing in a kind of plasma processing apparatus, this plasma processing unit has control assembly and wafer is implemented the process chamber of plasma treatment, above-mentioned process chamber has treatment state that detects inner treatment chamber and the plasmoid checkout gear of exporting a plurality of output signals, and above-mentioned control assembly has following function: the processing of wafers object information before the storage, the plasmoid during with this wafer of pre-treatment detect the relational expression of data and both associations; Calculate the predicted value of result according to the processes chamber state testing result that draws by above-mentioned plasmoid checkout gear and above-mentioned relation formula; And the predicted value of utilizing the result calculate comes the state of evaluation process chamber, it is characterized in that:

The simulation substrate is implemented to handle, simulation substrate processing object information before the above-mentioned control assembly storage, plasmoid in the time of should simulating substrate with pre-treatment detects the relational expression of data and both associations, and detect the predicted value that data and above-mentioned relation formula calculate result according to the plasmoid that the plasmoid checkout gear draws when the treatment of simulated substrate, the predicted value of the result that utilization calculates is come the state of evaluation process chamber, predicted value in the result of calculating surpasses under the situation of the limiting value that sets in advance, and does not carry out the processing of later simulation substrate.

9, the method for plasma processing in a kind of plasma processing apparatus, this plasma processing unit has control assembly and wafer is implemented the process chamber of plasma treatment, above-mentioned process chamber has treatment state that detects inner treatment chamber and the plasmoid checkout gear of exporting a plurality of output signals, and above-mentioned control assembly has following function: the processing of wafers object information before the storage, the plasmoid during with this wafer of pre-treatment detect the relational expression of data and both associations; Calculate the predicted value of result according to the processes chamber state testing result that draws by above-mentioned plasmoid checkout gear and above-mentioned relation formula; And the predicted value of utilizing the result calculate comes the state of evaluation process chamber, it is characterized in that:

With the close time of time of implementing to be used to make the processing of wafers of goods, under the condition that the processing with the wafer of making goods is similar to, the simulation substrate is implemented to handle, the control assembly of processing unit is stored the processing result information of this simulation substrate, plasmoid when processing is used to make the wafer of goods detects the relational expression of data and both associations, and detect data and above-mentioned relation formula when processing is used to make the wafer of goods according to the plasmoid that the plasmoid checkout gear draws, calculate the predicted value of having handled the result of simulation substrate in the moment that detects plasmoid, the predicted value of the result that utilization calculates is come the state of evaluation process chamber, surpass in the processing predicted value of calculating under the situation of the limiting value that sets in advance, do not carry out the processing that the wafer of goods is made in later being used to.

10, plasma processing apparatus according to claim 1 is characterized in that:

When the simulation substrate is implemented to handle, before the storage of above-mentioned control assembly the processing result information of treatment of simulated substrate under the approximate condition, with handle this before time of same period time of simulation substrate under plasmoid detection data and the relational expression that both are related, and detect the predicted value that data and above-mentioned relation formula calculate result according to the plasmoid that the plasmoid checkout gear draws when the treatment of simulated substrate, utilize the predicted value of the result that calculates to come evaluation process chamber state.

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