CN1268417C - Metallic compound film material and its preparation method - Google Patents
Metallic compound film material and its preparation method Download PDFInfo
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- CN1268417C CN1268417C CN 03140489 CN03140489A CN1268417C CN 1268417 C CN1268417 C CN 1268417C CN 03140489 CN03140489 CN 03140489 CN 03140489 A CN03140489 A CN 03140489A CN 1268417 C CN1268417 C CN 1268417C
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- metallic compound
- membrane
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- chemical reaction
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Abstract
The present invention provides a preparation method for a metallic compound membrane material, which comprises the following steps: a metallic membrane whose the thickness is smaller than 100 mu participates in chemical reaction, and the integral metallic membrane is converted into a thin metallic compound; thus, the metallic compound membrane material is obtained. The method has the advantages of simple operation and easy realization, and can effectively, quickly, conveniently and completely prepare self-existent metallic compound membrane material with micrometer thickness. In addition, the method can realize purposes which can not be realized by the existing method. The metallic compound membrane material obtained by the method is a new industrial material which can be applied to a plurality of technical fields. Thereby, the metallic compound membrane material has favorable market perspectives, and can obtain high economic benefits when being used for industrial production.
Description
Technical field
The present invention relates to technology field of membrane materials, be specifically related to a kind of metallic compound preparation method of film material.
Background technology
The inorganic compound preparation method of film material is to utilize surface treatment technology of material or deposition technique to form nanometer so that the film of micron order dimensional thickness on substrate (or part) surface at present.Surface treatment method mainly contains diffusion into the surface infiltration method, chemical conversion process, electrochemical conversion method etc., as application number is that 01107430.2 Chinese invention patent has been described a kind of aluminum pot fast anode hardening oxidation method, it is characterized in that the aluminum pot is activated with surfactant under 40 ℃～50 ℃ temperature conditions after the decontamination in normal temperature alkali lye, carrying out hard anodizing again handles, use chemical hole sealing agent and pure water to surface-sealing at last, prepare the oxide film protection layer; Application number is that the Chinese invention patent of 90101981.X has been described a kind of metallized film chemical oxidization method, and technical process is: at first prepare aluminium plating membrane at base material, produce the oxide film protection layer on the aluminium plating membrane surface with phosphoric acid, chromate oxidizing process then.Make the depositing of thin film technology and mainly comprise physical gas-phase deposite method (PVD) and chemical gaseous phase depositing process (CVD).The membrane material for preparing by above-mentioned material process for treating surface or deposition technique is always attached to the surface of substrate (or part), be actually skin covering of the surface, always combine with substrate, the thickness of backing material can't use membrane material separately in this case much larger than the thickness of thin-film material.But under many circumstances, simple metal compound film has the performance that is different from attached on the substrate, is widely used in industrial production, is not attached to the metallic compound membrane material on the backing material and prior art still can't prepare simple.
Summary of the invention
The objective of the invention is to overcome the shortcoming of prior art, providing a kind of is not attached to the simple metallic compound preparation method of film material on the backing material.
Purpose of the present invention is achieved through the following technical solutions: this metal compound film preparation methods comprises the steps: to make thickness to participate in chemical reaction less than the metallic membrane of 100 μ m, the full wafer metallic membrane is transformed into thin metallic compound, thereby obtains metallic compound membrane material of the present invention.
Described metallic membrane can be that both side surface participates in chemical reaction simultaneously, and also single side surface participates in chemical reaction (when thickness during less than 50 μ m).
It is with metallic membrane and liquid generation chemical reaction that described metallic membrane participates in chemical reaction, thereby thin metallic membrane is transformed into thin metallic compound membrane material.Described liquid can be acid solution, as chemical solutions such as sulfuric acid, nitric acid; Or nonmetal liquid, as bromine water, liquid sulfur etc.
It is with metallic membrane and gas generation chemical reaction that described metallic membrane participates in chemical reaction, thereby thin metallic membrane is transformed into thin metallic compound membrane material.Described gas can be non-metal gas, as oxygen, nitrogen, chlorine etc.; Or heating sublimation is the nonmetal of gas, as gaseous iodine, gaseous state phosphorus, gaseous state arsenic etc.
It is that metallic membrane is carried out oxidation reaction as the anode of electrochemical anodic oxidation that described metallic membrane participates in chemical reaction, thereby thin metallic membrane is transformed into thin metallic compound membrane material.
Described metal comprises general metal material, as aluminium, zinc, iron, copper, tin etc., also comprises silicon.
In the technique scheme, thin metallic membrane is most of or all be transformed into thin metallic compound membrane material and all can realize technical purpose of the present invention.
Metallic compound membrane material range of application by method for preparing is more extensive, as can be applicable to gas or liquid fine filtering, can be used as photosensitive functional material or the use of gas-sensing function material etc.
Action principle of the present invention is: when metal material generation chemical reaction, surface at metal material forms metallic compound, find that after deliberation the metallic compound thickness that forms in the metal surface is generally less than 50 μ m, be reduced to thickness as thickness less than 100 μ m with metal material, and make its two sides take place simultaneously chemical reaction can with the full wafer metal material all or major part change into metallic compound, form the metallic compound membrane material; For the metal membrane material of thinner thickness, as less than 50 μ m, single face generation chemical reaction can make the full wafer metal film change into the metallic compound membrane material so.
The present invention compared with prior art has following advantage and effect:
1, the inventive method is simple to operate, realizes easily, can effectively, fast, conveniently, intactly make the metallic compound membrane material of self-existent micron thickness, realizes the existing irrealizable goal of the invention of membrane preparation method.
2, the metallic compound membrane material of the present invention's acquisition is a kind of brand-new industrial materials, can be applied in a lot of technical fields, has market prospects preferably, uses in industrial production and can bring huge economic benefit.
3, technology of the present invention is simple, the preparation efficiency height, and financial cost is low, is suitable for producing in enormous quantities.
The specific embodiment
The present invention is described in further detail below in conjunction with embodiment, but embodiments of the present invention are not limited thereto.
Embodiment 1
With thickness is the fine aluminium thin slice of 30 μ m, puts into the sulfuric acid electrolytic solution that concentration is 1mol/L as anodised anode, and the temperature of sulfuric acid electrolytic solution is 3 ℃, and anodic current density is 4A/dm
2, the voltage of electrolytic cell is 100V; In this process, aluminium generation oxidation reaction changes into alundum (Al, and forms the through hole crack at thickness direction, and the size of hole can be by the control of adjusting process parameter.The present invention is transformed into the alundum (Al ceramic membrane material with micro-through-hole crack through anodic oxidation with the fine aluminium thin slice, can be used for the fine filtering of gas and liquid.
Embodiment 2
Block sulphur is placed glass beaker, be placed on and be heated to 130 ℃ in the heating furnace, and be incubated, make sulphur be fused into liquid, then that 10 μ m are thick zinc paper tinsel launches to be immersed in the sulphur liquid, and heating furnace vacuumized, continue insulation, make zinc paper tinsel and sulphur fully react generation zinc sulphide, the zinc paper tinsel is changed into after the zinc sulphide paper tinsel, the zinc sulphide foil material is taken out from sulphur liquid, thereby prepare ZnS-film material with photosensitive function.
Embodiment 3
The tinfoil paper that 5 μ m are thick launches to place the heating furnace that is filled with oxygen to be heated to 200 ℃, and be incubated, make tin be oxidized to tin oxide, tinfoil paper is changed into after the oxidation tinfoil paper, the tin oxide foil material is taken out from heating furnace, thereby prepare tin oxide film material with gas-sensing function effect.
Claims (8)
1, a kind of metallic compound preparation method of film material is characterized in that comprising the steps: to make thickness to participate in chemical reaction less than the metallic membrane of 100 μ m, and metallic membrane all is transformed into thin metallic compound.
2, metallic compound preparation method of film material according to claim 1 is characterized in that: described metallic membrane both side surface participates in chemical reaction simultaneously.
3, metallic compound preparation method of film material according to claim 1 is characterized in that: described metallic membrane thickness is less than 50 μ m, and its single side surface participates in chemical reaction.
4, according to the described metallic compound preparation method of film material of claim 1～3, it is characterized in that: it is with metallic membrane and liquid generation chemical reaction that described metallic membrane participates in chemical reaction, and thin metallic membrane is transformed into thin metallic compound membrane material.
5, metallic compound preparation method of film material according to claim 4 is characterized in that: described liquid is acid solution or nonmetal liquid.
6, according to the described metallic compound preparation method of film material of claim 1～3, it is characterized in that: it is with metallic membrane and gas generation chemical reaction that described metallic membrane participates in chemical reaction, and thin metallic membrane is transformed into thin metallic compound membrane material.
7, metallic compound preparation method of film material according to claim 6 is characterized in that: described gas is that non-metal gas or heating sublimation are the nonmetal of gas.
8, according to the described metallic compound preparation method of film material of claim 1～3, it is characterized in that: it is that metallic membrane is carried out oxidation reaction as the anode of electrochemical anodic oxidation that described metallic membrane participates in chemical reaction, and thin metallic membrane is transformed into thin metallic compound membrane material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03140489 CN1268417C (en) | 2003-09-12 | 2003-09-12 | Metallic compound film material and its preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03140489 CN1268417C (en) | 2003-09-12 | 2003-09-12 | Metallic compound film material and its preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1522792A CN1522792A (en) | 2004-08-25 |
| CN1268417C true CN1268417C (en) | 2006-08-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN 03140489 Expired - Fee Related CN1268417C (en) | 2003-09-12 | 2003-09-12 | Metallic compound film material and its preparation method |
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| CN (1) | CN1268417C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102641666A (en) * | 2012-04-28 | 2012-08-22 | 常州大学 | Porous nano silicon ion separation film |
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2003
- 2003-09-12 CN CN 03140489 patent/CN1268417C/en not_active Expired - Fee Related
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| CN1522792A (en) | 2004-08-25 |
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