CN1261980C - 电镀过程的控制方法及装置 - Google Patents

电镀过程的控制方法及装置 Download PDF

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Publication number
CN1261980C
CN1261980C CNB028133544A CN02813354A CN1261980C CN 1261980 C CN1261980 C CN 1261980C CN B028133544 A CNB028133544 A CN B028133544A CN 02813354 A CN02813354 A CN 02813354A CN 1261980 C CN1261980 C CN 1261980C
Authority
CN
China
Prior art keywords
electroplating
thickness
layer
processing layer
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028133544A
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English (en)
Chinese (zh)
Other versions
CN1522464A (zh
Inventor
A·J·帕萨丹
T·J·桑德曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries US Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of CN1522464A publication Critical patent/CN1522464A/zh
Application granted granted Critical
Publication of CN1261980C publication Critical patent/CN1261980C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating Methods And Accessories (AREA)
CNB028133544A 2001-07-02 2002-06-12 电镀过程的控制方法及装置 Expired - Fee Related CN1261980C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/897,626 US6444481B1 (en) 2001-07-02 2001-07-02 Method and apparatus for controlling a plating process
US09/897,626 2001-07-02

Publications (2)

Publication Number Publication Date
CN1522464A CN1522464A (zh) 2004-08-18
CN1261980C true CN1261980C (zh) 2006-06-28

Family

ID=25408146

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028133544A Expired - Fee Related CN1261980C (zh) 2001-07-02 2002-06-12 电镀过程的控制方法及装置

Country Status (8)

Country Link
US (1) US6444481B1 (enExample)
EP (1) EP1402568A2 (enExample)
JP (1) JP4307251B2 (enExample)
KR (1) KR100847370B1 (enExample)
CN (1) CN1261980C (enExample)
AU (1) AU2002345688A1 (enExample)
TW (1) TW580723B (enExample)
WO (1) WO2003005430A2 (enExample)

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JP3897922B2 (ja) * 1998-12-15 2007-03-28 株式会社東芝 半導体装置の製造方法、及びコンピュ−タ読取り可能な記録媒体
WO2002004887A1 (en) 2000-07-08 2002-01-17 Semitool, Inc. Methods and apparatus for processing microelectronic workpieces using metrology
US6747734B1 (en) 2000-07-08 2004-06-08 Semitool, Inc. Apparatus and method for processing a microelectronic workpiece using metrology
US6428673B1 (en) * 2000-07-08 2002-08-06 Semitool, Inc. Apparatus and method for electrochemical processing of a microelectronic workpiece, capable of modifying processing based on metrology
US6842659B2 (en) * 2001-08-24 2005-01-11 Applied Materials Inc. Method and apparatus for providing intra-tool monitoring and control
KR20050044434A (ko) 2001-11-13 2005-05-12 에프 에스 아이 인터내셔날,인코포레이티드 초소형전자 기판을 처리하는 감소의 풋프린트 공구
US7068303B2 (en) * 2002-06-03 2006-06-27 Microsoft Corporation System and method for calibrating a camera with one-dimensional objects
US6773931B2 (en) * 2002-07-29 2004-08-10 Advanced Micro Devices, Inc. Dynamic targeting for a process control system
US20050021272A1 (en) * 2003-07-07 2005-01-27 Jenkins Naomi M. Method and apparatus for performing metrology dispatching based upon fault detection
US7086927B2 (en) 2004-03-09 2006-08-08 Micron Technology, Inc. Methods and systems for planarizing workpieces, e.g., microelectronic workpieces
US6980873B2 (en) 2004-04-23 2005-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for real-time fault detection, classification, and correction in a semiconductor manufacturing environment
US7437404B2 (en) * 2004-05-20 2008-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for improving equipment communication in semiconductor manufacturing equipment
US7296103B1 (en) * 2004-10-05 2007-11-13 Advanced Micro Devices, Inc. Method and system for dynamically selecting wafer lots for metrology processing
US7736913B2 (en) * 2006-04-04 2010-06-15 Solopower, Inc. Composition control for photovoltaic thin film manufacturing
US20070227633A1 (en) * 2006-04-04 2007-10-04 Basol Bulent M Composition control for roll-to-roll processed photovoltaic films
JP5032360B2 (ja) * 2008-02-12 2012-09-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8406911B2 (en) 2010-07-16 2013-03-26 HGST Netherlands B.V. Implementing sequential segmented interleaving algorithm for enhanced process control
KR101681194B1 (ko) * 2015-11-16 2016-12-12 대영엔지니어링 주식회사 전착도장 품질관리방법
CN107808250B (zh) * 2017-10-30 2021-10-08 珠海杰赛科技有限公司 一种垂直电镀投料控制方法及系统
EP3781398B1 (en) * 2018-04-17 2024-07-10 3M Innovative Properties Company Method of making electrically-conductive film
JP6959190B2 (ja) 2018-07-24 2021-11-02 旭化成エレクトロニクス株式会社 学習処理装置、学習処理方法、化合物半導体の製造方法およびプログラム
US11061382B2 (en) * 2018-12-18 2021-07-13 General Electric Company Methods of forming electroformed components and related system
KR102317993B1 (ko) * 2019-11-27 2021-10-27 한국생산기술연구원 도금 막 두께 예측 장치 및 방법
US12116686B2 (en) * 2022-02-11 2024-10-15 Applied Materials, Inc. Parameter adjustment model for semiconductor processing chambers
KR102784623B1 (ko) 2022-08-26 2025-03-21 가부시키가이샤 에바라 세이사꾸쇼 기판 상태 측정 장치, 도금 장치, 및 기판 상태 측정 방법
DE102023105206A1 (de) * 2023-03-02 2024-09-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren und System zum Herstellen eines Substrats mittels Kupferabscheidung und entsprechendes Substrat
CN118480837A (zh) * 2024-05-08 2024-08-13 台州雅仕美医疗科技有限公司 一种个性定制式种植桥架及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2895888A (en) * 1957-10-07 1959-07-21 Industrial Nucleonics Corp Electrolytic plating apparatus and process
US3984679A (en) * 1975-02-18 1976-10-05 Gte Laboratories Incorporated Coating thickness monitor for multiple layers
US5391285A (en) * 1994-02-25 1995-02-21 Motorola, Inc. Adjustable plating cell for uniform bump plating of semiconductor wafers
KR0165470B1 (ko) * 1995-11-08 1999-02-01 김광호 반도체 소자의 박막형성 프로그램의 자동보정 시스템
US6020264A (en) * 1997-01-31 2000-02-01 International Business Machines Corporation Method and apparatus for in-line oxide thickness determination in chemical-mechanical polishing
US6238539B1 (en) * 1999-06-25 2001-05-29 Hughes Electronics Corporation Method of in-situ displacement/stress control in electroplating
US6405096B1 (en) * 1999-08-10 2002-06-11 Advanced Micro Devices, Inc. Method and apparatus for run-to-run controlling of overlay registration
US20020192944A1 (en) * 2001-06-13 2002-12-19 Sonderman Thomas J. Method and apparatus for controlling a thickness of a copper film

Also Published As

Publication number Publication date
US6444481B1 (en) 2002-09-03
TW580723B (en) 2004-03-21
KR100847370B1 (ko) 2008-07-21
JP2004534908A (ja) 2004-11-18
JP4307251B2 (ja) 2009-08-05
KR20040013014A (ko) 2004-02-11
CN1522464A (zh) 2004-08-18
AU2002345688A1 (en) 2003-01-21
WO2003005430A3 (en) 2003-05-08
WO2003005430A2 (en) 2003-01-16
EP1402568A2 (en) 2004-03-31

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C06 Publication
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Owner name: ADVANCED MICRO DEVICES INC

Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC.

Effective date: 20100708

C41 Transfer of patent application or patent right or utility model
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TR01 Transfer of patent right

Effective date of registration: 20100708

Address after: Grand Cayman, Cayman Islands

Patentee after: Globalfoundries Semiconductor Inc.

Address before: California, USA

Patentee before: Advanced Micro Devices Inc.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210310

Address after: California, USA

Patentee after: Lattice chip (USA) integrated circuit technology Co.,Ltd.

Address before: Greater Cayman Islands, British Cayman Islands

Patentee before: GLOBALFOUNDRIES Inc.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060628

Termination date: 20210612

CF01 Termination of patent right due to non-payment of annual fee