CN1260607C - Method for making LCD device - Google Patents

Method for making LCD device Download PDF

Info

Publication number
CN1260607C
CN1260607C CN 02141283 CN02141283A CN1260607C CN 1260607 C CN1260607 C CN 1260607C CN 02141283 CN02141283 CN 02141283 CN 02141283 A CN02141283 A CN 02141283A CN 1260607 C CN1260607 C CN 1260607C
Authority
CN
China
Prior art keywords
color filter
liquid crystal
color
crystal display
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 02141283
Other languages
Chinese (zh)
Other versions
CN1466011A (en
Inventor
冈本守
坂本道昭
吉川周宪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC LCD Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC LCD Technologies Ltd filed Critical NEC LCD Technologies Ltd
Priority to CN 02141283 priority Critical patent/CN1260607C/en
Publication of CN1466011A publication Critical patent/CN1466011A/en
Application granted granted Critical
Publication of CN1260607C publication Critical patent/CN1260607C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal (AREA)

Abstract

The present invention relates to a method for manufacturing an LCD, which comprises the following steps that a resist film red (R), green (G), blue (B), color filter with negative polarity can shield the light in the zone of a transparent pixel electrode which is connected with a source electrode by an optical mask mould and can be simultaneously exposed; thereafter, the color filter can be simultaneously developed. Because the color filter comprises a resist film with the negative polarity and is corresponding to a zone of the color filter in the light shielding zone, namely that the zone of the transparent pixel electrode which is connected with the source electrode is removed through developing, an opening is formed.

Description

Make the method for liquid crystal display device
Technical field
The present invention relates to a kind of method of making liquid crystal display device, especially, a kind of method of on TFT (thin film transistor (TFT)) liquid crystal display device, making CF (color filter), wherein the color filter of converting unit and multiple color is formed on the same transparency carrier.
Background technology
Have in the liquid crystal display device of colored twisted-nematic (TN) of TFT at some, color filter is set up and is provided with on the reverse substrate of TFT substrate opposite of TFT.In order to form the reverse substrate of this liquid crystal display device, the material membrane of color filter that comprises three kinds of colors of thermosetting resin is printed on the transparency carrier, and subsequently, described material membrane is hardened by heating, thereby forms color filter.The Japanese unexamined patent publication No. publication number flat-this manufacture method is described to some extent among the 4-369605.Then, TFT substrate and oppositely substrate is combined together and formed LCD panel.
Fig. 1 shows in the conventional liquid crystal part TFT substrate and the reverse sectional view of the relation of the position between the substrate.In traditional liquid crystal display device, liquid crystal layer 230 is set between first and second transparency carriers 201 and 223.Hereinafter, first and second transparency carriers 201 and 223 liquid crystal layer 230 1 sides will be called as the inboard, and an opposite side is called as the outside.
At the inside surface of first transparency carrier 201, be formed with the grid 203 that is connected with the sweep trace (not shown), and formation gate insulating film 204 makes it cover grid 203.On position corresponding to the gate insulating film 204 of grid 203, be formed with semiconductor layer 205, thereby form drain electrode 207 and source electrode 208 simultaneously semiconductor layer 205 is clipped in the middle.Further, form passivation layer 209, also be formed on the passivation layer 209 by the pixel electrode 216 that pixel is connected with source electrode 208 by the contact hole (not shown) that is formed in the passivation layer 209 to cover them.On pixel electrode 216, be formed with calibration membrane 217.
On the inside surface of second transparency carrier 223, sequentially be provided with color filter 210, transparent common electrode 221 and the calibration membrane 222 of black matrix 212, every kind of color.
Be set under the situation of the conventional liquid crystal part on the reverse substrate at the manufacturing color filter, when TFT substrate and reverse substrate are combined together, on the TFT substrate, be scanned line and data line and cut apart and be provided with the zone of pixel electrode 216, and on reverse substrate, cut apart by black matrix and be provided with between the zone of color filter, offset appears sometimes.When this displacement occurring, expection does not appear on the position of color and can appear color in design, thereby can't obtain required colorful visualization.Therefore, just need between pixel, provide an edge allowance to be used to compensate this displacement, that is,, thereby just be difficult to obtain the enough pixels of area greater than a black matrix of theoretical value.Thereby, can not obtain enough brightness.This defective along with pitch between the increase of resolution and the pixel reduce can become more obvious.
Therefore, develop a kind of liquid crystal display device that color filter is set recently on the TFT substrate, this substrate is called as the TFT substrate (Japanese unexamined patent publication No. publication number 2000-231123) that has CF on it.
A kind of method that has the TFT substrate of CF on traditional its that is used to make below will be described.The sectional view of Fig. 2 to Figure 11 shows the manufacturing step of the method that is used to make the TFT substrate that has CF on traditional its in order.
Be used for making the method that has the TFT substrate of CF on traditional its, at first, sweep trace 102 and grid (not shown) are formed on the transparency carrier 101 selectively, and as shown in Figure 2, gate insulating film 104 is formed on the whole surface.Then, semiconductor layer (not shown), data line 106, drain electrode (not shown) and source electrode 108 are formed on the gate insulating film 104, and passivating film 109 is formed on the whole surface.By this step, on each pixel, all formed a TFT.Further, Hong Se negative photosensitive resin molding 110Ra is formed on the passivating film 109 by centrifugal coating.The viscosity of photosensitive resin film 110Ra is about 10 (mPas).
Then, as shown in Figure 3, by utilizing photomask 111R to stop light except that the zone of red pixel, and the light that will form the zone of the contact hole that is used to connect transparent pixels electrode and source electrode 108 in the red pixel area, photosensitive resin film 110Ra exposed.
Then, photosensitive resin film 110Ra is developed.Because photosensitive resin film 110Ra is a negativity, photosensitive resin film 110Ra goes up the zone corresponding to the light occlusion area, promptly, be used to be connected the zone that the contact hole of transparent pixels electrode and source electrode 108 will be formed in the zone of non-red pixel and the red pixel area, in development, be removed, as shown in Figure 4, thus formed color filter 110R.
Then, as shown in Figure 5, green negative photosensitive resin molding 110Ga is formed on the whole surface by centrifugal coating.The viscosity of photosensitive resin film 110Ga also is to be about 10 (mPas).
Then, as shown in Figure 6, by utilizing photomask 111G to stop the light in the zone except that green pixel, and the light that will form the zone of the contact hole that is used to connect transparent pixels electrode and source electrode 108 in the green pixel zone, photosensitive resin film 110Ga exposed.
Then, as shown in Figure 7, photosensitive resin film 110Ga is developed.Because photosensitive resin film 110Ga is a negativity, photosensitive resin film 110Ga goes up the zone corresponding to the light occlusion area, is removed in development, thereby has formed color filter 110G.
Then, as shown in Figure 8, blue negative photosensitive resin molding 110Ba is formed on the whole surface by centrifugal coating.The viscosity of photosensitive resin film 110Ba also is to be about 10 (mPas).
Then, as shown in Figure 9, by utilizing photomask 111B to stop the light in the zone except that blue pixel, and the light that will form the zone of the contact hole that is used to connect transparent pixels electrode and source electrode 108 in the blue pixel area, photosensitive resin film 110Ba exposed.
Then, photosensitive resin film 110Ba is developed.Because photosensitive resin film 110Ba is a negativity, photosensitive resin film 110Ba goes up the zone corresponding to the light occlusion area, is removed in development, as shown in figure 10, thereby has formed color filter 110B.
Then, as shown in figure 11, black matrix 112 is formed on corresponding to TFT, and in the zone of sweep trace on the color filter and data line 106.Further, overlayer 113 is formed on the black matrix 112, and, also being formed with at color filter 110R, 110G, the opening part of 110B have the overlayer 114 of opening 114a.In the zone of the passivating film 109 that is exposed to opening 114a, form opening 109a then.The contact hole 115 that can reach source electrode 108 from opening 109a and 114a just has been configured.Then, be formed on the overlayer 114 by the transparent pixels electrode 116 that pixel ground is connected with source electrode 108 by contact hole 115.Then, the calibration membrane (not shown) is formed on the transparent pixels electrode 116.In this way, on the TFT substrate, make CF.
Yet when making on it CF in this way on the TFT substrate, the necessity of the use of photosensitive resin film and the exposure of color and development has one by one increased the step of manufacturing.In addition, because photosensitive resin film is be applied in transparency carrier whole lip-deep, promptly, because photosensitive resin film also is applied on the pixel that does not need photosensitive resin film, the amount of removed photosensitive resin film is just very many in subsequently exposure and in developing, thereby has increased the inessential cost of making.
Therefore, wish to use aforesaid printing thermosetting resin to form color filter having on the TFT substrate of CF.Yet, when using printing process,, can not realize the calibration accuracy as the Plate making printing art of taking pictures because present printing press degree of accuracy is not high.Traditional oppositely being provided with in the liquid crystal display device of color filter on the substrate,, do not need extra high calibration accuracy because color filter only need be formed in the zone of being cut apart by black matrix.Yet, have thereon under the situation of TFT substrate of CF, because color filter between source electrode and pixel electrode, need be the color filter opening, thereby require extra high calibration accuracy.That is, when the calibration accuracy of the TFT substrate that has CF on it is very low, will the offset of opening part appear, thus because changes in resistance and can not obtain preferable image.Therefore, can not simply traditional typography be applied thereon the manufacturing of TFT substrate with CF.
Summary of the invention
The purpose of this invention is to provide and a kind ofly can when guaranteeing high calibration accuracy, reduce manufacturing step, preferably can also reduce the manufacture method of the liquid crystal display device of raw-material consumption.
A kind of method that is used to make according to liquid crystal display device of the present invention comprises the steps: to form a converting unit for each pixel on transparency carrier; The color filter that forms multiple color on transparency carrier makes color filter cover converting unit; In each color filter of all colours, form the opening of the predetermined electrode that can reach each converting unit simultaneously; And the pixel electrode that formation is connected with predetermined electrode by described opening on each color filter.
According to the present invention, because after color filter is formed, on each color filter of all colours, also side by side form the opening on the color filter, thus the reduction of calibration accuracy when having avoided adopting the typography.In addition, owing to do not need to form described opening by color ground, the step of manufacturing has been reduced, thereby has improved throughput rate.
When forming the color filter of multiple color, the material of the color filter by will having predetermined color is printed on the transparency carrier, just can form the color filter of multiple color at an easy rate.
When forming the color filter of multiple color, the color filter of all colours preferably side by side forms.Thereby, just do not need the formation color filter of color one by one, thereby can further reduce the step of manufacturing.
By the material of usability photosensitiveness etchant resist, just can adopt photolithography to form opening, thereby can form opening accurately as color filter.Therefore, it is as follows to form the step of opening: stop that by utilizing photomask light corresponding to the position of predetermined electrode comes the color filter exposure to multiple color; Color filter to multiple color develops.
Another kind of method according to the present invention is, the color filter that is used to make converting unit and multiple color is formed on the method for the liquid crystal display device on the same transparency carrier.Described method comprises, comprises that the color filter of all colours of a photonasty etchant resist side by side is printed on the transparency carrier; By utilizing photomask to stop that light corresponding to the position of the predetermined electrode of converting unit comes the color filter exposure to multiple color; And the color filter of multiple color developed.
According to the present invention, throughput rate is improved, and this is because reduced the step of making, and has reduced raw-material consumption, and the calibration accuracy when having guaranteed to form opening.
Description of drawings
Fig. 1 shows in the traditional liquid crystal display device TFT substrate and the reverse sectional view of the relation of the position between the substrate.
Fig. 2 shows the sectional view of the method that is used to make the TFT substrate that has CF on traditional its.
Fig. 3 shows the sectional view of the manufacturing step after step shown in Figure 2.
Fig. 4 shows the sectional view of the manufacturing step after step shown in Figure 3.
Fig. 5 shows the sectional view of the manufacturing step after step shown in Figure 4.
Fig. 6 shows the sectional view of the manufacturing step after step shown in Figure 5.
Fig. 7 shows the sectional view of the manufacturing step after step shown in Figure 6.
Fig. 8 shows the sectional view of the manufacturing step after step shown in Figure 7.
Fig. 9 shows the sectional view of the manufacturing step after step shown in Figure 8.
Figure 10 shows the sectional view of the manufacturing step after step shown in Figure 9.
Figure 11 shows the sectional view of the manufacturing step after step shown in Figure 10.
Figure 12 shows the sectional view that is used to make according to the method for the liquid crystal display device of one embodiment of the invention.
Figure 13 shows the sectional view of the manufacturing step after step shown in Figure 12.
Figure 14 shows the sectional view of the manufacturing step after step shown in Figure 13.
Figure 15 shows the sectional view of the manufacturing step after step shown in Figure 14.
Figure 16 shows the sectional view of the manufacturing step after step shown in Figure 15.
Figure 17 shows the sectional view of the manufacturing step after step shown in Figure 16.
Figure 18 shows the sectional view of the manufacturing step after step shown in Figure 17.
Figure 19 shows the sectional view of the manufacturing step after step shown in Figure 180.
Figure 20 shows the layout of the black matrix and the electrode spread of the liquid crystal display device of making according to embodiments of the invention.
Figure 21 is the sectional view along A-A line direction among Figure 20.
Figure 22 is the sectional view along B-B line direction among Figure 20.
Figure 23 is the sectional view along C-C line direction among Figure 20.
Figure 24 shows the sectional view of the liquid crystal display device of making according to embodiments of the invention.
Figure 25 shows the planimetric map of the liquid crystal display device of making according to embodiments of the invention.
Figure 26 shows the synoptic diagram of the relation of the TFT substrate that has CF on transparency carrier and its.
Embodiment
Below, specify the method for making liquid crystal display device according to embodiments of the invention with reference to the accompanying drawings.Figure 12 to Figure 19 shows the sectional view of manufacturing step of making the method for liquid crystal display device according to embodiments of the invention in order.Figure 20 shows the layout of the black matrix and the electrode spread of the liquid crystal display device of making according to embodiments of the invention.Figure 21 to Figure 23 is respectively along the line A-A among Figure 20, B-B, the sectional view of C-C direction.Figure 12 to Figure 19 is corresponding to the sectional view of the D-D line direction among Figure 20.In Figure 20, not shown transparent pixels electrode.
In the present embodiment, at first, sweep trace 2 and grid 3 (seeing Figure 20 and Figure 21) are respectively formed on the transparency carrier 1, and as shown in figure 12, gate insulating film 4 is further formed on the whole surface.Then, the semiconductor layer 5 (seeing Figure 21), data line 6, drain electrode 7 and the source electrode 8 that are made of for example amorphous silicon or polysilicon are formed on the gate insulating film 4, and passivation layer 9 is formed on the whole surface then.With this step, on each pixel, respectively form a TFT.Sweep trace 2 have in one direction the range of linearity of extending and from then on the range of linearity extend to zone with grid 3 opposite sides and overlapping source electrode 8 and gate insulating film therebetween 4.Transparency carrier 1 can use, for example, and glass substrate or transparent resin substrate.Gate insulating film 4 comprises, for example, the synusia of SiOx film and SiNx film, its gross thickness is, for example, 1000 to 2000A °.Sweep trace 2, grid 3, data line 6, drain electrode 7 and source electrode 8 comprise that for example, thickness is 1000 to 4000A ° Al film, Mo film or Cr film.Semiconductor layer 5 comprises that for example, thickness is about 4000A ° amorphous si-layer, as the raceway groove of TFT.Passivation layer 9 comprises that for example, thickness is 1000 to 2000A ° SiNx film.
Further, as shown in figure 12, red filter 10R, green filter 10G and blue electric-wave filter 10B side by side are formed on the passivation layer 9 by printing process, make it corresponding every kind of color pixel.For color filter 10R, color filter 10G and color filter 10B can adopt, and for example, thickness is the acrylic acid etchant resist of the negative photosensitive of 1.0 to 2.0 μ m, has scribbled required pigment thereon, and its viscosity is about, for example, and 10 to 20 (mPas).When forming color filter 10R, 10G, during 10B, can the thick film of 5 to 10 μ m be printed on the central authorities of each pixel by a printing press, use a surface plate or analog to its leveling of exerting pressure then, perhaps the planar film printing of consistency of thickness is formed color filter, and make the consistency of thickness of these color filters by printing press.
Then, as shown in figure 13, color filter 10R, color filter 10G, the color filter 10B contact hole by using photomask 11 to be blocked in to be used to the transparent pixels electrode that connects each pixel and source electrode 8 be the light of the location that is formed, and side by side exposed.
Then, color filter 10R, color filter 10G, color filter 10B is side by side developed.At this moment, developer can use the alkaline developer of tetramethyl-ammonium oxyhydroxide (TMAH).Since color filter 10R, color filter 10G, color filter 10B comprises the negativity etchant resist, the light occlusion area, that is and, each color filter is removed by development corresponding to the zone of the connection transparent pixels electrode after the source electrode 8, as shown in figure 14, thereby has formed opening.
Then, as shown in figure 15, do not stretch into along extending on a certain direction in the range of linearity of pixel and in the zone corresponding to the data line on the color filter 6 at TFT and sweep trace 2 and to have formed black matrix 12.That is, as shown in figure 20, red opening 12R, green opening 12G, blue opening 12B is set in the black matrix 12.Black matrix 12 comprises that for example, thickness is the acrylic acid etchant resist of the negative photosensitive of 1 to 3 μ m, has scribbled required pigment or insulation carbon film on it.
Then, as shown in figure 16, on the black matrix 12 that is positioned on the data line 6, formed overlayer 13.
Further, as shown in figure 17, formed overlayer 14, had opening 14a on it and be set at color filter 10R, 10G, the opening part of 10B.Overlayer 13 and 14 comprises that separately for example, thickness is the positivity photosensitive resist film of 1.0 to 3.0 μ m.
Then, as shown in figure 18, opening 9a is formed on passivation layer 9 and exposes in the zone in opening 14a.Can just be configured to from the contact hole 15 that opening 9a and 14a reach source electrode 8.
Then, be formed on the overlayer 14 by the transparent pixels electrode 16 that pixel ground is connected with source electrode 8 by contact hole 15.Transparent pixels electrode 16 comprises that for example, thickness is 600 to 1200A ° indium tin oxide (ITO) film.
Then, calibration membrane 17 (seeing Figure 24) is formed on the transparent pixels electrode 16.Calibration membrane 17 comprises, for example, polyimide family preparation, and its thickness is, for example, 300 to 600A °.Can be made into the TFT substrate that has CF on it in this way.
Figure 24 and Figure 25 are respectively the sectional view and the planimetric maps of the liquid crystal display device made according to embodiments of the invention of expression.Under the situation of the LCD panel that is combined with the TFT substrate that has CF on its that make as mentioned above, after forming calibration membrane 17, sealant 18 is formed on the overlayer 14, as shown in figure 24.Sealant 18 be by, for example, epoxy adhesive constitutes.And sealant 18 has a hole 18a, is used to inject liquid crystal.
Then, it is bonding with sealed dose 18 of the reverse substrate of a lip-deep calibration membrane 22 that is formed on transparency carrier 23 to include transparent common electrode 21, thereby makes transparent common electrode 21 and calibration membrane 22 face calibration membrane 17.Transparent common electrode 21 be by, for example, ITO constitutes, its thickness is, for example, 800 to 1500A °, its surface resistance is, for example, 20 to 40 Ω/.Calibration membrane 22 comprises, for example, polyimide family preparation, its thickness be, for example, and 300 to 600A °.Transparency carrier 23 can adopt, for example, and glass substrate or transparent resin substrate.The inside surface of transparency carrier 23 can adopt the silane surface conditioning agent to be used as the connection processing agent.
Then, liquid crystal is injected into by the hole 18a of sealant 18, thereby forms liquid crystal layer 30.In liquid crystal layer 30, be scattered with spacer 31 in the surface, and in sealant 18, also be scattered with the spacer (not shown) of periphery.Spacer (microballon) the 31st in the surface, by, for example, diameter is that the condensate of the divinylbenzene intersection combination of 4.5 to 5.5 μ m constitutes.Outer barrier (microbot) be by, for example, diameter is that the glass fibre of 5 to 7 μ m constitutes.Liquid crystal layer 30 comprises, for example, and fluorine compounds.After injecting liquid crystal, the hole 18a of sealant 18 is sealed by a sealing-plug 19.Sealing-plug 19 can adopt, for example, and the acrylate preparation that ultraviolet (UV) is solidified.
Then, as shown in figure 24, Polarizer 32 is bonded on the surface of the transparency carrier 1 that faces liquid crystal layer 30 and 23, and, as shown in figure 25, on it with the data line terminal 33 of the connection data line 6 of proper number and the scanning line terminal that is connected sweep trace 2 34 of proper number.Can make the panel of liquid crystal display in this way.Further, can for example connect the step of the such driving circuit of data-driven and turntable driving and load onto the step of shell, thereby finally make liquid crystal display device.
According to this embodiment, because the color filter 10R of three kinds of colors, 10G, 10B, comprise simultaneously the photonasty etchant resist that forms and formation opening thereon side by side, be compared to the manufacture method of traditional centrifugal coating of employing, wherein material membrane be formed on the whole surface of transparency carrier and the formation of opening one by one color carry out, thereby the step of manufacturing can be reduced significantly and improved throughput rate.And,,, just must remove many color filters thereafter because the color filter of every kind of color also do not need to be applied to the pixel of color filter equally according to traditional manufacture method.Yet the zone of being removed among the present invention only is the zone corresponding to described opening.Thereby raw-material consumption can be reduced to about 1/3rd of classic method.Further, though adopt printing process side by side to form color filter 10R, 10G, 10B because the formation of opening is to carry out as an independent step, thereby has fully guaranteed necessary calibration accuracy.
By a transparency carrier is divided into, for example, above-mentioned manufacturing step is side by side carried out in each zone in eight zones, then transparency carrier is cut into eight parts, and eight TFT substrates that have CF on it just can be formed at one time.Figure 26 shows transparency carrier and has the synoptic diagram of the relation between the TFT substrate of CF on it.For example, from the about 470mm of length, the rectangle transparency carrier 41 of the about 370mm of width can obtain, and for example, has the TFT substrate 42 of CF on its of eight 6.3-inches.
In the above-described embodiments, the width in zone of black matrix that can regard the cover data line on a plane as equals the width of data line substantially, and to obtain high brightness, when obtaining enough brightness, the width of overlay area can be greater than the width of data line.On the other hand, when obtaining required contrast, just no longer need to have formed black matrix.
And in the present invention, shown in Figure 20 or the like, sweep trace 2 not only has the range of linearity, also has to extend out to face grid 3 one sides and cover source electrode 8 and the zone of gate insulating film therebetween 4.This setting of stretching out the zone is to have bigger capacitive reactance between source electrode 8 and the sweep trace 2 and suppress change in voltage unnecessary on the source electrode 8 in order to guarantee, thereby has avoided the flicker of image.Yet, when obtaining the image of enough quality, just always do not need this zone, just can adopt another kind of structure, with contact hole 15 be arranged on grid 3 near.
Further, in the above-described embodiments, the zone that does not exist adjacent color filter to cover mutually, but also can provide a kind of adjacent color filter to cover the zone of any between mutually a little.
As mentioned above, according to the present invention, owing to no longer need to form opening to color on color filter one by one, thereby the step of manufacturing can be reduced and improved throughput rate.And, in the step that forms opening, avoided when adopting printing, occurring the situation that calibration accuracy reduces.Further, by printing on the transparency carrier each with predetermined color by on cross the material of the color filter of look, can form the color filter of multiple color easily, and by all colours side by side being formed the color filter of multiple color, just no longer need the formation color filter of color one by one, thereby the step of manufacturing has further been reduced.In addition, comprise the color filter of photonasty etchant resist, just can adopt photolithography to form opening, thereby described opening can be formed with high precision by use.

Claims (8)

1. a method that is used to make liquid crystal display device comprises the steps:
On transparency carrier, form conversion element for each pixel;
Thereby the color filter that forms multiple color on transparency carrier makes color filter cover described conversion element;
For each color filter of all colours side by side forms an opening that can reach the predetermined electrode of each conversion element; With
On each color filter, form a pixel electrode that connects predetermined electrode by described opening.
2. the method for manufacturing liquid crystal display device as claimed in claim 1, the formation of the color filter of wherein said multiple color also comprise, prints step to the transparency carrier with every kind with the material of crossing the color filter of look on the predetermined color.
3. the method for manufacturing liquid crystal display device as claimed in claim 1 or 2, wherein in the colour of described color filter formed, the color filter of all colours formed simultaneously.
4. the method for manufacturing liquid crystal display device as claimed in claim 1 or 2, wherein said color filter comprise a photonasty etchant resist.
5. the method for manufacturing liquid crystal display device as claimed in claim 3, wherein said color filter comprise a photonasty etchant resist.
6. the method for manufacturing liquid crystal display device as claimed in claim 4, the formation of wherein said opening comprise the steps: by using the light that photomask blocks corresponding to the predetermined electrode position to come the color filter of multiple color is exposed; Color filter to colour develops.
7. the method for manufacturing liquid crystal display device as claimed in claim 5, the formation of wherein said opening comprise the steps: by using the light that photomask blocks corresponding to the predetermined electrode position to come the color filter of multiple color is exposed; Color filter to colour develops.
8. method that is used to make liquid crystal display device, wherein the color filter of conversion element and multiple color is formed on the same transparency carrier, and described method comprises the steps:
The color filter that will comprise all colours of a photonasty etchant resist side by side is printed on the transparency carrier;
Come color filter exposure by using photomask to block light corresponding to the predetermined electrode position of conversion element to multiple color;
Color filter to colour develops.
CN 02141283 2002-07-05 2002-07-05 Method for making LCD device Expired - Fee Related CN1260607C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 02141283 CN1260607C (en) 2002-07-05 2002-07-05 Method for making LCD device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 02141283 CN1260607C (en) 2002-07-05 2002-07-05 Method for making LCD device

Publications (2)

Publication Number Publication Date
CN1466011A CN1466011A (en) 2004-01-07
CN1260607C true CN1260607C (en) 2006-06-21

Family

ID=34147754

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 02141283 Expired - Fee Related CN1260607C (en) 2002-07-05 2002-07-05 Method for making LCD device

Country Status (1)

Country Link
CN (1) CN1260607C (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4731886B2 (en) * 2004-11-12 2011-07-27 株式会社ブイ・テクノロジー Method for manufacturing substrate for liquid crystal display device
CN104297832B (en) 2014-09-28 2017-02-15 合肥鑫晟光电科技有限公司 Color filter, color filter manufacturing method, display panel, display device and driving method

Also Published As

Publication number Publication date
CN1466011A (en) 2004-01-07

Similar Documents

Publication Publication Date Title
CN1199075C (en) Reflection type color liquid crystal display device having a special kind of sub-pixels for increasing luminance
CN102692777B (en) Liquid crystal display device
US9310651B2 (en) Liquid crystal display device with first and second substrates sealed by sealing material with an end of protective material on second substrate being disposed between inner and outer wall surfaces of the sealing material
CN1693973A (en) Color filter on thin film transistor type liquid crystal display device and method of fabricating the same
US6738125B2 (en) Liquid crystal display apparatus and method for manufacturing same
CN1746735A (en) Display device and manufacture method thereof
US20060139515A1 (en) Liquid crystal display device and method of manufacturing the same
US20040017538A1 (en) Upper substrate, liquid crystal display apparatus having the same and method of fabricating the same
CN1714310A (en) Color filtering device for improved brightness
CN1716066A (en) Liquid crystal display device and manufacturing method thereof
CN1888962A (en) Liquid crystal display device and method of manufacturing the same
US20090121232A1 (en) Array substrate, method for manufacturing the same and display panel having the same
CN1892331A (en) Display panel and method of manufacture
CN1749825A (en) Substrate for liquid crystal display device and method of fabricating the same
CN1769973A (en) Method for fabricating a light-shielding layer for a liquid crystal display device
CN1873481A (en) Liquid crystal display panel having a constant cell gap and method of making the same
CN1896855A (en) Liquid crystal display device
CN1577000A (en) Liquid crystal display device and manufacturing method thereof
US7851835B2 (en) Display substrate, method of manufacturing the same and display device having the same
US7876415B2 (en) Display substrate having a TFT liquid crystal display region surrounded by a seal region having a cell-gap compensating part with a dummy pattern formed from the same layer as a pixel electrode of the TFT
CN1841144A (en) Liquid crystal display and method of manufacturing the same
CN1617031A (en) Liquid crystal display device and method for fabricating the same
JP2004094217A (en) Manufacturing method for self-aligned pixel electrode for liquid crystal display device
CN101055367A (en) Color filter substrate for liquid crystal display, and manufacturing method thereof
CN1260607C (en) Method for making LCD device

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: NIPPON ELECTRIC CO., LTD.

Free format text: FORMER OWNER: NEC LCD TECHNOLOGY CO.,LTD

Effective date: 20100610

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: KANAGAWA-KEN, JAPAN TO: TOKYO, JAPAN

TR01 Transfer of patent right

Effective date of registration: 20100610

Address after: Tokyo, Japan

Patentee after: NEC Corp.

Address before: Kanagawa, Japan

Patentee before: NEC LCD Technologies, Ltd.

ASS Succession or assignment of patent right

Owner name: GETENA FUND CO., LTD.

Free format text: FORMER OWNER: NEC CORP.

Effective date: 20110804

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20110804

Address after: Delaware, USA

Patentee after: Nippon Electric Co.

Address before: Tokyo, Japan

Patentee before: NEC Corp.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060621

Termination date: 20180705

CF01 Termination of patent right due to non-payment of annual fee