CN1251303C - Method for producing integrated circuit - Google Patents
Method for producing integrated circuit Download PDFInfo
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- CN1251303C CN1251303C CN 02147386 CN02147386A CN1251303C CN 1251303 C CN1251303 C CN 1251303C CN 02147386 CN02147386 CN 02147386 CN 02147386 A CN02147386 A CN 02147386A CN 1251303 C CN1251303 C CN 1251303C
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- water
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- photoresistance
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Abstract
The present invention relates to a method for manufacturing an integrated circuit. A water-solubility negative type light resistor is applied to the photoetching manufacture process of a light cover which is provided with a filling hole; a solidifying film is formed between the interfaces of the light resistor and the light cover by the reaction of the water-solubility negative type light resistor and original acid components in the light resistor. In addition, an opening of a contact hole is exposed after the photoetching manufacture process is carried out, but water-solubility negative type photoresist in the filling hole is reserved, but the film is not removed by the photoetching manufacture process. Thus, the width of the opening of the contact hole can be reduced. The water-solubility negative type light resistor components comprise: a polymer, a photoactive compound, an inhibitor, a crosslinking agent and a solvent.
Description
Technical field
The present invention relates to the photolithographic fabrication process in the integrated circuit, particularly relate to and utilize the manufacture method of water-soluble minus photoresistance in the photolithographic fabrication process.
Background technology
It is very complicated that present integrated circuit photolithography is made process, comprised the above masks of dozens of mostly.Employed photoresistance is mixed by resin, emulsion, solvent and other additive in the general photolithographic fabrication process, meets can produce after the light to link to make the light resistance structure reinforcement and when being insoluble to developer, be called negative photoresistance; Otherwise, then be called positive photoresistance.The quality of photoresistance should also possess good tack, etch-resistance and resolution (resolution) except the photoperceptivity of photoresistance.Therefore, the qualification rate of the material character of photoresistance and performance and manufacture process and accuracy have extremely close relation.
Complete successfully the photolithographic fabrication process, except the material of selecting photoresistance, also need be careful live width, overlay, qualification rate and component characteristic, and the quality of transfer pattern quality in the assessment photolithographic fabrication process, mainly be that resolution is high more, the transfer quality of the dark more representative pattern of the depth of focus is good more according to resolution and two pointers of the depth of focus.Along with the lifting day by day of assembly integration, heal when live width and line-spacing and to become trickle, also more and more higher to the requirement of the resolution of photolithographic fabrication process.When making the fine and closely woven integrated circuit of aggregation degree height, pattern, the diffraction effect of optics in the photolithographic fabrication process (diffraction effect) is proximity effect (proximityeffect) for example, can cause main body comparative and resolution bad, and produce incomplete or wrong circuit pattern.In order to improve the resolution of optical exposure system, need to use the short light source of wavelength to be used as exposure light source usually.Yet the reduction of optical source wavelength can cause the depth of focus (depth of focus; DOF) dwindle, for the live width below 0.5 micron, its depth of focus is the difference of surface undulation no better than, is difficult for successfully focusing on.Generally be to utilize the equipment of high-NA to improve exposure latitude and printing degree, but so but more cause the minimizing of the depth of focus.The more shallow depth of focus can cause developer can't develop to photoresistance bottom, and causes the contacting metal lead can't touch assembly fully, even causes the contacting metal lead to contact with assembly and form and open circuit.Therefore, cause the electrical stability of assembly to reduce, cause the manufacture process reliability to descend.
Summary of the invention
In the above-mentioned background of invention, make in the process at the integrated circuit photolithography that live width is dwindled day by day, employed mask still has the phenomenon of depth of focus deficiency, and can't video picture to the photoresist layer bottom, and then cause and contact between contacting metal lead and the assembly not exclusively, even cause between contacting metal lead and the assembly forming and open circuit, have a strong impact on the electrical stability of semiconductor subassembly.
Therefore, one of purpose of the present invention forms the wide open mouth of contact of broad for a kind of method for manufacturing integrated circuit is provided, because wide open mouthful of width of contact is wide more, its manufacture process window is also big more, can avoid the phenomenon of depth of focus deficiency.Therefore defining than preset width on original photoresistance earlier is wide opening, utilize again water-soluble minus photoresistance can with the characteristic of sour composition effect in original photoresist, on the exposed surface of original photoresistance, form film, because this film can't be removed in follow-up development step, can dwindle wide open mouthful of width of aforementioned defined contact thus, and realize the live width of original design.
Another object of the present invention is for providing a kind of method for manufacturing integrated circuit, be to utilize mask to define first photoresist layer with filling hole (Padding Hole) pattern, then on first photoresist layer, form water-soluble minus photoresistance, utilize water-soluble minus photoresistance can with the characteristic of sour composition effect in original photoresist, on the exposed surface of original photoresistance, form film, and keep the water-soluble minus photoresistance in the above-mentioned filling hole, so can improve the depth of focus and dwindle wide open mouthful of width of contact.
According to above-described purpose, method for manufacturing integrated circuit provided by the present invention comprises: form first photoresist layer on base material, this first photoresist layer has several openings; Form second photoresist layer and be covered on first photoresist layer and the base material, and fill up above-mentioned opening, the wherein sour composition of this second photoresist layer and first photoresist layer reaction, and between the contact interface of itself and first photoresist layer, form film; And, carry out a photolithographic fabrication process, remove the second a part of photoresist layer thus and expose the part of opening, and on first photoresist layer, keep film.In addition, more can in first photoresist layer, add in addition a little openings in for example above-mentioned filling hole, and second photoresist layer can still fill up these openings after the photolithographic fabrication process.
The second above-mentioned photoresist layer is made of water-soluble minus photoresistance, and its composition comprises: can be water-solublely, and the percentage by weight that accounts for water-soluble minus photoresistance is between a polymer of about 4% to about 8%; Can be water-soluble smooth acid producing agent (Photo Acid Generator; PAG), and the Photoactive compounds percentage by weight that accounts for this water-soluble minus photoresistance between a Photoactive compounds (Photo-ActiveCompound) of about 0.01% to about 0.1%; Can be water-soluble amine (Amine), and the concentration that accounts for water-soluble minus photoresistance is between about 1/1000000th (Parts Per Million; Ppm) to the quencher (Quencher) of about 30ppm; Can be water-solublely, and the percentage by weight that accounts for water-soluble minus photoresistance is between a crosslinking agent (Crosslinking Agent) of about 0.5% to about 2%; And, comprise deionized water (De-Ionized Water; D.I.W) a solvent.Perhaps, above-mentioned solvent can be by deionized water and isopropyl alcohol (Isopropyl Alcohol; IPA) form, wherein isopropyl alcohol accounts for the percentage by weight of water-soluble minus photoresistance between about 4% to about 7%.
Utilize method for manufacturing integrated circuit of the present invention, have and improve the depth of focus and strengthen advantage such as processing procedure window, therefore can and then promote the online stability of metal.In addition, because in 100 nm technology node, the ability that can be brought the test light lithography in the semiconductor structure will be the contact hole, and the present invention has the advantage of dwindling contact hole live width, has more preferable integrated circuit fabrication process competitiveness.
Brief description of drawings
Preferred embodiment of the present invention will be aided with following figure and do more detailed elaboration in comment backward, wherein:
Fig. 1 to Fig. 3 is the manufacture process profile that illustrates according to the method for manufacturing integrated circuit of a preferred embodiment of the present invention.
Embodiment
The present invention discloses a kind of method for manufacturing integrated circuit, be to use twice mask and water-soluble minus photoresistance, and the hole reaches the raising depth of focus to improve aperture opening ratio purpose is filled in collocation.The present invention utilizes a preferred embodiment to describe, and please refer to the icon of following description and cooperation Fig. 1 to Fig. 3, and wherein Fig. 1 to Fig. 3 is the manufacture process profile that illustrates according to a preferred embodiment of method for manufacturing integrated circuit of the present invention.
Please refer to Fig. 1, it illustrates the manufacture process profile according to the method for the method for manufacturing integrated circuit of a preferred embodiment of the present invention.At first, base material 100 is provided, be coated with on this base material 100 and utilized formed first photoresist of for example spin coating (spin coating) method, wherein first photoresist is the eurymeric photoresistance, and can be by I-line (I-Line) photoresistance, KrF (KrF) photoresistance, argon fluoride (ArF) photoresistance, fluorine (F
2) photoresistance, extreme ultraviolet light (extreme ultraviolet; EUV) material such as photoresistance and electron beam (e-beam) photoresistance constitutes.Then, carry out the first photolithographic fabrication step, after step of exposure and development step, in first photoresist, form several contact holes 106 and several filling holes 108, and expose part base material 100, form first photoresist layer 102.Because in photoetching process, be projected to the light of first photoresist by the filling hole pattern, can strengthen by filling the adjacent contact hole pattern of hole pattern being projected to the light energy intensity of first photoresist, so can increase the depth of focus in contact 106 zones, hole in first photoresist.
Then, please refer to Fig. 2, form second photoresist 104 and cover on first photoresist layer 102 and the base material 100, and fill up contact hole 106 and fill hole 108.Second photoresist layer 104 is made of water-soluble minus photoresistance, and water-soluble is that the composition of minus photoresistance comprises polymer, Photoactive compounds, inhibitor, crosslinking agent and solvent etc.
Wherein, polymer can be water-soluble polymer, the percentage by weight that accounts for water-soluble minus photoresistance between about 4% to about 8%, object lesson that it is preferable such as polyvinyl acetal (polyvinylacetal), PVP (polyvinyl pyrrolidone; PVP), polyene propionic acid (polyallylic Acid), polyvinyl alcohol (polyvinyl alcohol; PVA), polymine (polyethyleneimine), poly(ethylene oxide) (polyethylene oxide; PEO) and polyvinylamine (polyvinylamine) etc., better person is a polyvinyl acetal, and the structural formula of polyvinyl acetal (I) is as follows:
Structural formula (I)
Photoactive compounds is to be water-soluble smooth acid producing agent (photo acid generator PAG), and this Photoactive compounds accounts for the percentage by weight of water-soluble minus photoresistance between about 0.01% to about 0.1%, its preferable object lesson is as drone salt derivative (onium salt derivative) and three pyridine derivatives (triazinederivative) etc., better person is drone salt derivative PAG2087 and PAG-C, and the structural formula of PAG2087 (II) is as follows respectively with the structural formula (III) of PAG-C:
Inhibitor is water-soluble amine (amine), and this Photoactive compounds accounts for the concentration of water-soluble minus photoresistance between about 1/1000000th (parts per million; Ppm) between about 30ppm, object lesson that it is preferable such as ethamine (ethylamine), dimethylamine (dimethylamine), diethylamine (diethylamine), trimethylamine (trimethylamine), triethylamine (triethylamine), n-propylamine (n-propylamine), isopropylamine (isopropylamine), second butylamine (s-butylamine), tri-n-butylamine (t-butylamine), cyclohexylamine (cyclohexylamine), ethylenediamine (ethylenediamine), six methylene diamines (hexamethylenediamine), monoethanolamine (monoethanolamine; MEA), diethanol amine (diethanolamine; DEA), triethanolamine (triethanolamine; TEA), normal-butyl diethanol amine (n-butyldiethanolamine), Tetramethylammonium hydroxide (tetra-methyl ammonium hydroxide; TMAH), TBAH (tetra-butyl ammonium hydroxide; TBAH) with choline (choline) etc., better person is a TBAH.
Crosslinking agent is a water-soluble cross-linker, and this Photoactive compounds accounts for the percentage by weight of water-soluble minus photoresistance between about 0.5% to about 2%, object lesson that it is preferable such as urea derivative (urea derivaive) and melamine derivative (melamine derivative), for example be epoxy ethyl urea (ethyleneurea), wherein the structural formula of epoxy ethyl urea (IV) is as follows:
Above-mentioned functional group R
1, R
2, R
3And R
4Be selected from a group that is made up of hydrogen and alkyl (alkyl group), wherein better person is methoxyl group hydroxymethyl urea (methoxy-methylol-urea).
Solvent comprises deionized water (de-ionized water at least; D.I.W), wherein deionized water accounts for the percentage by weight of water-soluble minus photoresistance between about 85% to about 90%.According to water-soluble minus photoresistance of the present invention, solvent more can be made up of deionized water and isopropyl alcohol, and wherein isopropyl alcohol accounts for the percentage by weight of water-soluble minus photoresistance between about 4% to about 7%.
Because the sour composition effect in water-soluble minus photoresistance meeting of the present invention and above-mentioned first photoresist layer 102, therefore can be at the contact interface of second photoresist 104 and first photoresist layer 102, comprise the surface and contact hole 106 and fill in the hole 108, form the film 110 that one deck solidifies, this film 110 can't be removed in follow-up exposure imaging step.
Afterwards, please refer to Fig. 3, the second photolithographic fabrication process of carrying out to be to define second photoresist 104, the contact hole 106 in Open from This Side first photoresist layer 102, and optionally keep and fill up second photoresist 104 of filling hole 108.Carry out step of exposure earlier, it utilizes wavelength 365 nanometer (Nanometer; Nm), 248nm, 193nm, 157nm light source, extreme ultraviolet light or electron beam to this water-soluble minus photoresistance exposure, with on the so far water-soluble minus photoresistance of the design transfer of mask.Then, carry out development step, it is the aqueous solution that utilizes deionized water or comprise deionized water, and for example the mixed liquor of deionized water and alcohols displays the potential pattern that is shifted in second photoresist 104, and forms the second photoresist layer 104a.
Wherein,, therefore be retained on the surface of first photoresist layer, thus, can make the width W that contacts hole 106 among Fig. 1 originally because film 110 can't be removed by above-mentioned photolithographic fabrication process
1, become the width W among Fig. 3
2, and reach the purpose that reduces contact hole live width.Perhaps, can utilize the big wider mask of processing procedure window of opening, and arrange in pairs or groups and utilize method provided by the present invention, and reach the purpose of original expection A/F.Therefore it should be noted that method that the above-mentioned collocation of the present invention has a mask of filling the hole only for for example, more can use, the invention is not restricted to this with the general mask collocation that tool is not filled the hole.
In addition, when water-soluble minus photoresistance of the present invention, when being covered on first photoresist layer 102 and the base material 100, more can carry out soft roasting (soft bake as second photoresist layer 104; SB) step is for example utilized about 70 seconds of soft roasting this water-soluble minus photoresistance of about 85 ℃ temperature.Perhaps, after second photoresist 104 exposes, can carry out postexposure bake (Post Exposure Bake; PEB) step for example utilizes about 130 ℃ temperature to toast this water-soluble minus photoresistance about 90 seconds.It should be noted that above-mentioned soft roasting step be with the part of photoresist layer easily by the step of driving away in the photoresistance, and the postexposure bake step be further with in the photoresistance residual solvent, reach minimum by evaporation.This two baking procedure does not influence the effect of method of the present invention and water-soluble minus photoresistance, does not therefore limit the scope of the invention.
Mask of the present invention in addition is to look actual demand and the kind of the photoresistance that adopted, and selects the mask of tool different background.For example, when first photoresist layer is positive photoresistance, the first selected mask answers tool dark background and required pattern to should be transparent, and when second photoresist layer was the water soluble negative photoresistance, the second selected mask answered tool transparent background and required pattern to should be opaque.
Comprehensively above-mentioned, an advantage of the present invention is exactly owing to after water-soluble minus photoresistance and the sour composition reaction that originally was formed at the photoresist on the base material, can form film 110 between both interfaces, and reach the purpose of dwindling live width.In addition, another advantage of the present invention more reaches the purpose that improves the depth of focus after being more to arrange in pairs or groups and utilizing the mask with filling hole pattern.
As understood by those skilled in the art, the above is preferred embodiment of the present invention only, is not in order to limit claim of the present invention; All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should be included in the following claim scope.
Claims (9)
1, a kind of method for manufacturing integrated circuit comprises at least;
On a base material, form one first photoresist layer, this first photoresist layer and have several first openings and several second openings wherein, those first openings are respectively adjacent to those second openings;
Forming one second photoresist layer covers on this first photoresist layer and this base material, and fill up these first openings and those second openings, wherein one of this second photoresist layer and this first photoresist layer sour composition reaction, and between the contact interface of this second photoresist layer and this first photoresist layer, form a film; And
Carry out a photolithographic fabrication process, remove this a part of second photoresist layer thus and expose the part of these first openings, and keep this film on this first photoresist layer, wherein this second photoresist layer still fills up these second openings after this photolithographic fabrication process.
2, method for manufacturing integrated circuit as claimed in claim 1, the material of the first wherein above-mentioned photoresist layer is a positive photoresistance, and is selected from a group that is made up of the resistance of I linear light, KrF photoresistance, argon fluoride photoresistance, fluorine two amount body photoresistances, extreme ultraviolet light photoresistance and electron beam photoresistance and combination thereof.
3, method for manufacturing integrated circuit as claimed in claim 1, wherein above-mentioned photolithographic fabrication process is to utilize a light source that this second photoresist layer is exposed, produce a crosslinked action thus, and this light source is selected from a group that is made up of a 365nm light source, a 248nm light source, a 193nm light source, a 157nm light source, an extreme ultraviolet radiant and an electron beam.
4, method for manufacturing integrated circuit as claimed in claim 1, the second wherein above-mentioned photoresist layer is made of a water-soluble minus photoresistance, and the composition of this water-soluble minus photoresistance comprises at least:
One polymer, wherein this polymer is a water-soluble polymer, and this polymer accounts for a percentage by weight of this water-soluble minus photoresistance between 4% to 8%;
One Photoactive compounds, wherein this Photoactive compounds is a water-soluble smooth acid producing agent, and this Photoactive compounds accounts for a percentage by weight of this water-soluble minus photoresistance between 0.01% to 0.1%;
One quencher, wherein said quencher are a water-soluble amine, and this quencher accounts for a concentration of this water-soluble minus photoresistance between between the 1ppm to 30ppm;
One crosslinking agent, wherein this crosslinking agent is a water-soluble cross-linker, and this crosslinking agent accounts for a percentage by weight of this water-soluble minus photoresistance between 0.5% to 2%; And
One solvent, wherein this solvent comprises a deionized water at least.
5, method for manufacturing integrated circuit as claimed in claim 4, wherein the material of this water-soluble polymer is selected from by polyvinyl acetal, PVP, polyene propionic acid, polyvinyl alcohol, polymine, poly(ethylene oxide) and polyvinylamine and one of is formed group.
6, method for manufacturing integrated circuit as claimed in claim 4, wherein the material of this water-soluble smooth acid producing agent is selected from a group that is made up of drone salt derivative and three pyridine derivatives.
7, method for manufacturing integrated circuit as claimed in claim 4, the material of wherein said water-soluble amine are selected from a group that is made up of ethamine, dimethylamine, diethylamine, trimethylamine, triethylamine, n-propylamine, isopropylamine, second butylamine, tri-n-butylamine, cyclohexylamine, ethylenediamine, six methylene diamines, monoethanolamine, diethanol amine, triethanolamine, normal-butyl diethanol amine, Tetramethylammonium hydroxide, TBAH and choline.
8, method for manufacturing integrated circuit as claimed in claim 4, wherein the material of this water-soluble cross-linker is selected from a group that is made up of urea derivative and melamine derivative.
9, method for manufacturing integrated circuit as claimed in claim 4, wherein this solvent is made up of a deionized water and an isopropyl alcohol more at least, and this isopropyl alcohol accounts for a percentage by weight of this water-soluble minus photoresistance between 4% to 7%, and this deionized water accounts for a percentage by weight of this water-soluble minus photoresistance between 85% to 90%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02147386 CN1251303C (en) | 2002-10-21 | 2002-10-21 | Method for producing integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02147386 CN1251303C (en) | 2002-10-21 | 2002-10-21 | Method for producing integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1492479A CN1492479A (en) | 2004-04-28 |
| CN1251303C true CN1251303C (en) | 2006-04-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02147386 Expired - Lifetime CN1251303C (en) | 2002-10-21 | 2002-10-21 | Method for producing integrated circuit |
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| CN (1) | CN1251303C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7646468B2 (en) * | 2006-04-04 | 2010-01-12 | Asml Netherlands B.V. | Lithographic processing cell and device manufacturing method |
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2002
- 2002-10-21 CN CN 02147386 patent/CN1251303C/en not_active Expired - Lifetime
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| CN1492479A (en) | 2004-04-28 |
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