CN1249912C - High-efficiency modulating RF amplifier - Google Patents
High-efficiency modulating RF amplifier Download PDFInfo
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- CN1249912C CN1249912C CNB008120587A CN00812058A CN1249912C CN 1249912 C CN1249912 C CN 1249912C CN B008120587 A CNB008120587 A CN B008120587A CN 00812058 A CN00812058 A CN 00812058A CN 1249912 C CN1249912 C CN 1249912C
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C5/00—Amplitude modulation and angle modulation produced simultaneously or at will by the same modulating signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
- H03F1/0222—Continuous control by using a signal derived from the input signal
- H03F1/0227—Continuous control by using a signal derived from the input signal using supply converters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0244—Stepped control
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
- H03F3/1935—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers without distortion of the input signal
- H03G3/004—Control by varying the supply voltage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2201/00—Indexing scheme relating to details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements covered by H03F1/00
- H03F2201/32—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion
- H03F2201/3215—To increase the output power or efficiency
Abstract
The present invention provides for high-efficiency power control of a high-efficiency (e.g. hard-limiting or switch-mode) power amplifier. The spread between a maximum frequency of the desired modulation and the operating frequency of a switch-mode DC-DC converter is reduced by following the switch-mode converter with an active linear regulator. The linear regulator controls the operating voltage of the power amplifier with sufficient bandwidth to reproduce the desired amplitude modulation waveform. The linear regulator rejects variations on its input voltage even while the output voltage is changed in response to an applied control signal. Amplitude modulation is achieved by varying the operating voltage on the power amplifier. High efficiency is enhanced by allowing the switch-mode DC-to-DC converter to also vary its output voltage such that the voltage drop across the linear regulator is kept at a low and relatively constant level.
Description
Technical field
The present invention relates to the modulation of RF amplifier and signal.
Background technology
In the Wireless Telecom Equipment such as cell phone, beep-pager, radio modem, be concerned about very much battery life.Especially, radio frequency transmits and consumes a large amount of power supplys.The influencing factor of this type of power consumption is poor efficiency power amplification operation.The operating efficiency of the typical RF power amplifier of radio communication is about 10%.Undoubtedly, the low-cost technologies that significantly improves efficiency of amplitude will press for more than will satisfying.
In addition, most of modern digital Wireless Telecom Equipment moves by grouping.That is, send the information that transmits with the form of one or more bursts, wherein transmitter only works during the burst length, and inoperative in the every other time.Therefore, need be with triggering of energy effective and efficient manner control impuls and the control that stops, so that further extending battery life.
Power amplifier is divided into not on the same group: Class A, Class B, class AB etc.The different bias condition of different types of power amplifier ordinary representation.When design RF power amplifier, between linearity and efficient, trade off usually.Different types of amplifier is operating as the different modes that the designer provides above two parameters of balance.
Generally speaking, power amplifier is divided into two kinds different classes of: linear and non-linear.Linear amplifier (as, class A amplifier and quiescent push-pull amplifier) keep higher linearity, cause at its output faithful reappearance input signal, its reason is output signal and the linear ratio of input signal.Nonlinear amplifier (as, single-ended Class B and class C amplifier) in, output signal is not directly proportional with input signal.The amplitude distortion that produces on the output signal makes these amplifiers be fit to very much not have amplitude-modulated signal (being also referred to as constant envelope signals).
The amplifier delivery efficiency is defined as the ratio between RF power output and input (DC) power.The main cause that efficiency power amplifier is low is the power that dissipates in transistor.Class A amplifier is a poor efficiency, and reason is that electric current continuously passes through equipment.By convention, in order to increase efficient, raise the efficiency by the compromise linearity.For example, in class B amplifier, select bias condition so that in half period internal cutting off output signal, unless transistor seconds provides second half (recommending).Therefore, the linearity of waveform is lower.By using accumulator or other filters to filter higher and lower frequency part, still can make output waveform is sinusoidal waveform.
Class C amplifier conducting in the cycle of less than 50% is so that further raise the efficiency; That is, if the angle of flow of output current is spent less than 180, then this amplifier is called class C amplifier.The efficient of above operator scheme is greater than the efficient of Class A or class B amplifier, but usually its distortion greater than Class A or class B amplifier.In the situation of class C amplifier, when changing input amplitude, output amplitude still changes.Even its reason is class C amplifier and plays constant current source effect-an of short duration current source-rather than switch.
The amplifier of other kinds is by only using transistor as switch, the power dissipation in the favourable solution transistor.The basic principle of this class A amplifier A is, switch electric consumption not in theory because or no-voltage or zero current pass through.Because the V-I product of switch is always zero, do not dissipate in this equipment.Penta power-like amplifier uses a transistor, and on the contrary, Class D power amplifier uses two transistors.
Yet in fact, switch is also imperfect.(switch has the ON/OFF time and connects resistance.) lower efficiency about dissipating.Therefore, prior art is sought so-called " switching regulator " amplifier of modification always, and (wherein driver transistor is as the switch of match operation frequency, so that when the transistor turns electric current, the power that dissipates is dropped to minimum level) method, so that the non-zero of moment conversion in the time interval switching voltage be zero, thereby reduce power dissipation.Class E amplifier uses the reactance output network, and the latter provides enough degrees of freedom of switching voltage being carried out shaping, so that have null value and zero gradient when switch connection, thereby reduces switching loss.Own class A amplifier A is the switching regulator amplifier of further kind.Own class A amplifier A generates the output waveform more square than common sine wave.By encouraging in output network, to generate neat order harmonics (that is, x3, x5, x7 etc.) and inhibition generation even order harmonic wave (that is, x2, x4 etc.), realize " squaring " of output waveform.
Fig. 1 represents the example of the known power amplifier that uses in the cell phone.For example, the GSM cell phone must be planned power output in the scope of 30dBm.In addition, what must accurately control transmitter switches on and off PROFILE EXEC, to prevent spurious emissions.Via DAC (digital to analog converter), by the direct power controlling of cellular DSP (digital signal processor).In the circuit of Fig. 1, signal GCTL drives the grid of outside AGC amplifier, and the latter controls to power amplifier with the RF level.Via the output of directional coupler feedback fraction, be used for close loop maneuver.The amplifier of Fig. 1 is not the switching regulator amplifier.On the contrary, this amplifier mostly is the class AB amplifier that enters saturation condition most, therefore the lower efficient of proof.
Fig. 2 represents United States Patent (USP) 3,919, the example of known penta power-like amplifier of 656 explanations.By lead 1 the RF input signal is connected to exciter 2, the latter is via the signal controlling active equipment 5 that connects by lead 3.In fact, when exciter 2 suitably encouraged, active equipment 5 was as a switch.Therefore, the output port with active equipment is expressed as a single-pole single-throw switch (SPST) 6.Input port by switch 6 tandem compound DC power supplys 7 and laod network 9.The output port of laod network 9 is connected to load 11.When according to required AC output frequency cycling switch 6, with switching frequency (with and harmonic wave), be the AC energy with the DC power conversion of power supply 7.
The application people is the FEEDBACK CONTROL that the United States Patent (USP) 3,900,823 of Sokal etc. has illustrated penta power-like amplifier.Need the FEEDBACK CONTROL hint can not show device characteristics fully, this hints the actual operation that deviates from as the equipment of real switch again.Sokal has also illustrated the solution of the feedthrough power control problem of low-power level: drive grade by using negative-feedback technology control RF input, to control one or more prime DC power supplys.Need FEEDBACK CONTROL to force the feedback loop dynamic effect to system.
Although the class E amplifier structure of Fig. 2 can realize high conversion efficiency in theory, has following shortcoming, because damped oscillation and bigger voltage swing occurs at the output of active equipment.The big voltage swing that common beyond supply voltage is 3 times hinders and uses penta class circuit with some active equipment with low breakdown voltage.
For the RF power amplifier of console switch formula, must get back to quick responsive excitation output transistor between the cut-out then in cut-out and full connection with repetitive mode.Realize that above-mentioned quick device for switching depends on selected transistorized kind as switch: for field-effect transistor (FET), Control Parameter is a gate source voltage, and for bipolar transistor (BJT, HBT), Control Parameter is basic emitter current.
Yet the exciting circuit in the RF amplifier of Fig. 2 generally includes the matching network of being made up of tuning (resonance) circuit.With reference to Fig. 3, in this class formation, the RF input signal is connected to exciting amplifier, be generally the Class A operation.By matching network, the output signal of exciting amplifier is connected to the control terminal of switching transistor (in Fig. 3, being expressed as FET).As the design of laod network shown in Figure 2, the correct design matching network is not an easy thing.
Various designs attempt to improve the different aspect of basic class E amplifier.The author is FET penta power-like amplifier based on the physical analysis model-maximum PAE design of Choi etc., IEEE microwave theory and technology journal, and Vol.47, No.9 has illustrated a kind of design in 1999 years 9 months.The document is simulated various nonideal FET switches, and according to this model, derives the conclusion that helps the class E amplifier design.For selected topology, in the power level that is lower than 0.5W 55% maximum power increase efficient (PAE) appears being about.At higher-wattage, reduce PAE automatically, as, when 2W less than 30%.
According to the numerical value of realizing the DC power supply that the last 26dB gain of the required realization of final power output is required, the PAE of power amplifier is set.(, be input to the power supply of amplifier-be difficult for measuring-become insignificant by pumping signal at above gain level.) at present, also do not have and can generate the above power output of 1W and the known multiplying arrangement of 26dB power gain at least is provided with radio frequency.Therefore, must supply one or more amplifiers in the final stage prerequisite, and when determining whole PAE, must comprise the DC power supply that this class A amplifier A consumes.
The conventional design practice requires output impedance of Amplifier Design person's impedance matching exciter and the finally input impedance of switching transistor.Therefore, effectively go deep into the required voltage of impedance (or electric current) according to (lower usually) that enter switch block, the real output that the definition drive(r) stage needs.The concrete impedance of the input of switching transistor is a definable not, and reason is that the impedance notion needs linear operation, and switch is non-linear.
Fig. 4 represents the example according to the RF amplifier circuit of said method.By the inter-stage " T part " that inductance L 1, shunt capacitance C and inductance L 2 are formed, be used for drive(r) stage is matched 50 ohm load (that is final stage) of supposition.
Above conventional practice is considered as linear network with the inter-stage between drive(r) stage and the final stage, and inter-stage is not a linear network.In addition, the power between conventional practice maximization drive(r) stage and the final stage transmits (inevitable outcome of impedance matching).Therefore, for example, in order to generate the required driving voltage as the FET of switching transistor, exciter must generate in-phase current, so that the power of impedance matching is provided.
Fig. 5 represents another example of conventional RF power amplifier circuit.This circuit uses " resonance interstage matched ", wherein uses coupling capacitance Ccpl to connect drive(r) stage and final stage.
As mentioned above, conventional practice can not realize high-output power (as, 2W, the power level that when operation of cellular telephone, runs into usually) high PAE.Therefore, need embody the RF power amplifier of high PAE at higher output power.
The control of the power output of amplifier always is expressed as needs feedback arrangement, as Sokal etc. illustrate and following United States Patent (USP) illustrational: 4,392,245,4,992,753,5,095,542,5,193,223,5,369,789,5,697,072 and 5,697,074.Such as United States Patent (USP) 5,276, other of 912 and so on reference to explanation by changing amplifier load circuit control amplifier power output.
Relevant issues are to generate modulation signal, as, amplitude modulation (AM) signal, quadrature amplitude modulation signal (QAM) etc.Fig. 6 represents a kind of known IQ modulated structure.Data-signal is applied to generate the quadrature phase modulating coder of I and Q signal.I and Q signal are applied to the quadrature phase modulator together with carrier signal.Carrier signal generates piece by carrier wave and generates, and wherein harmonic ringing is applied to carrier wave and generates piece.
Usually, the output signal of quadrature phase modulator is applied to variable attenuator according to power control signal control.In other examples, realize power control by changing Amplifier Gain.Its implementation is: adjust transistorized bias voltage in the linear amplifier, the effect that utilizes transistorized mutual conductance to change with the bias condition of using.Because amplifier gain and transistorized mutual conductance have firm relation, will effectively change amplifier gain thereby change mutual conductance.Utilize linear power amplifier to amplify the signal that generates, be applied to antenna then.
In the AM signal, make that the amplitude of the amplitude of signal and the information signal such as sound is roughly proportional.In essence, the information signal such as sound is not constant, and therefore, the AM signal of generation constantly changes in power output.
Before 70 years,, just illustrated the method for using non-linear class C amplifier to generate accurate amplitude-modulated signal to be called " plate modulation " such as the textbook of radio engineer's handbook (McGraw-Hill, 1943) of Terman and so on.In typical plate modulation technology, with the output current of modulated amplifier, linearity is added in the source current of amplifier element (vacuum tube or transistor), so that increase and reduce source current according to amplitude modulation from mean value.Variable current makes apparent supply voltage on the amplifier element according to resistance (or the electricity is led) characteristic changing of amplifier element.
By direct control power output,, just can realize AM as long as the frequency bandwidth of variable operation voltage is enough.That is with respect to the amplifier operating voltage, above-mentioned nonlinear amplifier is in fact as linear amplifier.When the excitation nonlinear power amplifier, can change at any time on the meaning of operating voltage, can carry out linear amplitude modulation output signal.
The additive method of realizing amplitude modulation comprises the many constant amplitude signals of merging, as United States Patent (USP) 4,580, and 111,4,804,931,5,268,658 and 5,652,546 is described.United States Patent (USP) 4,896,372,3,506,920,3,588,744 and 3,413,570 have illustrated the amplitude modulation method of the power supply that uses pulse width modulation change power amplifier.Yet above-mentioned patent thinks that the frequency of operation of switching DC-DC transducer must be higher than maximum modulating frequency far away.
The application people is the United States Patent (USP) 5 of Nakanishi etc., 126,688 have solved the control of nonlinear amplifier, and its method is to adjust with the cycle of the operating voltage of power amplifier to combine, use FEEDBACK CONTROL that actual amplifier power output is set, to improve the operating efficiency of power amplifier.The major defect of this technology is to need additional control circuit read required power output, need to change the power amplifier operating voltage raising the efficiency to determine (deny), and change changes then if desired.Additional control circuit has increased the complexity of amplifier, and also will absorb secondary power except that the power of amplifier itself, and this has directly reduced overall efficiency.
Another challenge is to generate the high power RF signal with required modulating characteristic.According to the application people is the United States Patent (USP) 4 of Swanson, 580,111 explanation realizes this purpose, many fixedly high-efficiency amplifiers of power output that provide are provided its method, wherein order is enabled these amplifiers, so that required total array output power multiple that is the power output of each constant power amplifier.In the method, the minimum change in the overall power output equals the power of each amplifier of numerous high-efficiency amplifiers in fact.Fine graded if desired power output resolution then may need a large amount of high efficiency amplifiers.This has increased the overall complexity of amplifier undoubtedly.
United States Patent (USP) 5,321,799 carry out polarization modulation, but are limited to complete response data signal, and can not use with high power, high-efficiency amplifier.This patent is thought by the digital amplifier of following phase modulated and signal generation phase, to the amplitude variations that applies of modulation signal.Then by using digital to analog converter to generate last analog signal.In state-of-art, illustrating, because amplitude change may serious distortion, so have the signal of the information that realizes in the amplitude variations and high efficiency, nonlinear power amplifier is incompatible.
Although the technical descriptioon of above-mentioned list of references still has many problems to need to solve, comprising: under the situation that does not need the operation of high efficiency switch formula (comparing), change the high efficiency amplitude modulation that operating voltage is realized the RF signal by using switch mode converters with frequency modulation; Utilize unified power level of modulation control and pulse train control; Enable the efficient modulation of any required feature (amplitude and/or phase place); And under the situation of not sacrificing effect, enable high power operation (as, be used for the operation of base station).
Summary of the invention
Generally speaking, the present invention to be to realize the mode of required control or modulation, provide efficient (as, restriction or switching regulator firmly) the highly efficient power control of power amplifier.Unlike the prior art, do not need FEEDBACK CONTROL.That is, can be under the situation of discontinuous or frequent feedback adjustment, control amplifier.In one embodiment, have the switch mode converters of active linear adjuster, reduce the difference between the frequency of operation of the highest frequency of required modulation and switching DC-DC transducer by imitation.The purpose of design linear regulator is to utilize the operating voltage of enough bandwidth control power amplifiers, with the required amplitude modulation waveform of reproduction of reality.Another purpose of design linear regulator is to suppress the variation of input voltage, even the control signal of response application changes output voltage.Even the variation of input voltage is suitable even lower than its frequency with the variation of controlled output, above-mentioned inhibition also will occur.Realize amplitude modulation by the operating voltage that directly or effectively changes power amplifier, simultaneously initial DC power efficient is converted to the amplitude modulation output signal.By allowing the switching DC-DC transducer to change its output voltage, keep landing to show constant relatively low level by the voltage of linear regulator, raise the efficiency.Can make up time division multiple access (TDMA) burst capability and effectively amplitude modulation, its prerequisite is a control combinations thereof function.In addition, can in same structure, make up the variation of the mean output power level consistent with the order of certain communication system.
Efficient modulation structure can be expanded to any modulation.With polarization mode, that is,, carry out modulation need not the mode of quadrature modulation.
Many single high-effective classifyings can be combined, form high power, efficient modulated structure.
According to an aspect of the present invention, a kind of variable output radio-frequency power amplifier is provided here, it is characterized in that, comprise: voltage regulating device, be used for the control signal of one of them according to being used to carry out level control, pulse train control and modulation, be created in a specific voltage in the voltage range, described voltage regulating device comprises: a switch mode converters level and a linear regulator level; With a power amplifier, comprise: a final stage amplifying stage, this final stage amplifying stage has described specific voltage as supply voltage, also has a pumping signal, this pumping signal can two states-hard on-state and hard off-state-between make described final stage amplifying stage repeat to be energized, and need not in the appreciable time this amplifier of operation in the linear operation zone; Wherein said amplifier is controlled under the situation that does not need continuous or frequent feedback adjustment.
According to another aspect of the present invention, a kind of variable output radio-frequency power amplifier is provided here, it is characterized in that, comprise: voltage regulating device, be used for according to the control signal of carrying out one of level control, pulse train control and modulation at least, be created in a specific voltage in the voltage range, this voltage regulating device comprises: a switch mode converters level and a linear regulator level; With a power amplifier, this amplifier comprises: a final stage amplifying stage, this final stage amplifying stage has specific voltage as supply voltage, also has a pumping signal, this pumping signal can two states-hard on-state and hard off-state-between this final stage amplifying stage of repeat actuation, and need not in the appreciable time operational amplifier in the linear operation zone; Wherein said amplifier is controlled under the situation that does not need continuous or frequent feedback adjustment.
According to a further aspect of the invention, provide a kind of method of control power amplifiers here, it is characterized in that, comprising: the control signal according to carrying out one of level control, pulse train control and modulation at least produces specific voltage; Supply voltage as the final stage amplifying stage of power amplifier is applied to power amplifier with specific voltage; And need not in the appreciable time operational amplifier in the linear operation zone, just can two states-hard on-state and hard off-state-between this final stage amplifying stage of repeat actuation; Wherein do not need continuously or situation that frequent feedback is adjusted under control amplifier.
Description of drawings
By read following explanation together with accompanying drawing, will understand the present invention more.Wherein accompanying drawing is:
Fig. 1 is the block diagram by the known power amplifier that changes supply voltage control power output;
Fig. 2 is the simplified block diagram of known single-ended switching regulator RF amplifier;
Fig. 3 is the schematic diagram of the part of known RF amplifier;
Fig. 4 is the schematic diagram of conventional RF power amplifier circuit;
Fig. 5 is the schematic diagram of another kind of conventional RF power amplifier circuit;
Fig. 6 is the block diagram of known IQ modulated structure;
Fig. 7 is the block diagram according to the power amplifier of certain exemplary embodiment;
Fig. 8 compares saturated class AB power amplifier output power and the Mathematical Modeling as the function of operating voltage
Fig. 9 is a kind of waveform, represents a kind of operation of execution mode;
Figure 10 is a kind of waveform, represents the operation of another kind of execution mode;
Figure 11 is a kind of waveform, expression burst AM operation;
Figure 12 is a kind of waveform, and expression has the burst AM operation of power level control;
Figure 13 is to use the block diagram of the polar modulation architecture of high efficiency amplifier;
Figure 14 is the block diagram of first high power, efficient amplitude modulation RF amplifier;
Figure 15 is a kind of waveform, the operation of the amplifier of expression Figure 14;
Figure 16 is the block diagram of second high power, efficient amplitude modulation RF amplifier;
Figure 17 is a kind of waveform, the operation of the amplifier of expression Figure 16;
Figure 18 is the block diagram according to the RF switching regulator amplifier of a certain execution mode;
Figure 19 is the schematic diagram of a part of the RF switching regulator amplifier of a certain execution mode according to the present invention;
Figure 20 is the schematic diagram of the suitable load network that uses in the RF switching regulator amplifier of Figure 19;
Figure 21 is a kind of waveform, the input voltage and relevant waveform of the RF switching regulator amplifier of expression Figure 19;
Figure 22 is a kind of waveform, switching transistor base stage and the collector current waveform of expression Figure 19;
Figure 23 is a kind of waveform, the output voltage of the RF switching regulator amplifier of expression Figure 19;
Figure 24 is the schematic diagram according to the part of the RF switching regulator amplifier of another kind of execution mode;
Figure 25 is a kind of waveform, the input voltage and relevant waveform of the RF switching regulator amplifier of expression Figure 24;
Figure 26 is a kind of waveform, the collector current waveform of the driver transistor of expression Figure 24;
Figure 27 is a kind of waveform, the grid voltage waveform of the switching transistor of expression Figure 24;
Figure 28 is the schematic diagram according to the RF power amplifier circuit of another kind of execution mode; And
Figure 29 is a kind of waveform, the waveform that the selected node of the amplifier circuit of expression Figure 28 occurs.
Embodiment
Referring now to Fig. 7, this figure is the schematic diagram that overcomes the power amplifier of many above-mentioned shortcomings.The voltage that switching regulator (or saturated) nonlinear amplifier has generated to its applied power controlled stage.In exemplary embodiment, in fact according to formula
Control is applied to the voltage V of nonlinear amplifier, and wherein P is the power demand output level of amplifier, and R is the resistance of amplifier.In the situation of switching regulator or regulex, resistance R can be considered as constant.Power level control receives DC input voltage (for example, receiving from battery), and receives a power level control signal, then according to the following formula output voltage.
Utilize Fig. 8 to illustrate by changing operating voltage alone and directly control the efficient of the power output of nonlinear amplifier on a wide dynamic range, wherein Fig. 8 compares saturated class AB power amplifier output power and the Mathematical Modeling as the function of operating voltage
Referring again to Fig. 7, the figure shows power control circuit according to exemplary embodiment.Power control circuit comprises a switch mode converters level, with a linear regulator level that is connected with series system.Switch mode converters can be a class D equipment, for example, perhaps is switch mode power (SMPS).Switch mode converters progressively is reduced to dc voltage effectively slightly and surpasses but near the voltage of power demand amplifier operating voltage level.That is switch mode converters is carried out effective level of total power control.Switch mode converters can provide the enough accurate control of the chamfered portion that definition power demand envelope also can be provided.
Linear regulator is carried out filtering function in the output of switch mode converters.That is linear regulator is controlled the accurate power envelope modulation during the TDMA pulse train.As switch mode converters, linear regulator can provide also can not provide the level control ability.
Note that the speed that depends on switch mode converters and linear regulator, can use power control circuit to carry out power control and/or amplitude modulation.Control signal PL/BURST/MOD is input in the controll block, and the latter exports the suitable analog or the digital controlled signal of switch mode converters and linear regulator.Can realize this controll block in the mode of ROM (read-only memory) and/or DAC (digital to analog converter).
With reference to Fig. 9, Fig. 9 is a kind of waveform, the operation of a kind of execution mode of expression according to the present invention.Waveform A and B represent to be applied to the analog control signal of switch mode converters and linear regulator respectively.Waveform V
1And V
2The output voltage of representing switch mode converters and linear regulator respectively.Suppose that switch mode converters has bigger time constant, that is, it is slower to tilt.When control signal A is set to the first non-zero power level, voltage V
1To tilt towards the voltage direction that matches.Since the switching regulator characteristic of transducer, voltage V
1May have a large amount of fluctuations.Reach the needed time quantum definition of required voltage wake-up period.When arriving this voltage, improve or reduction control signal B, to define a series of transmission pulse train.When improving control signal B, voltage V
2Towards the voltage direction quick slant that makes progress that matches, when reducing control signal B, voltage V
2Downward quick slant.Behind a succession of pulse train (in this example), improve control signal A, so that increase the RF power level of follow-up pulse train.At waiting time, it is low that control signal B keeps.As voltage V
1When arriving particular level, improve or reduce control signal B and transmit pulse train to define other.
With voltage V
1The dashed lines of last stack is represented voltage V
2Note that voltage V
2Slightly less than voltage V
1, greater than voltage V
1On negative peak fluctuation.The input voltage V of linear regulator
1Output voltage V with linear regulator
2Between minute differences, make all efficient operations become possibility.
With reference to Figure 10,, suppose that switch mode converters has the short period constant according to different execution modes; That is, tilt comparatively fast.Therefore, when improving control signal A, voltage V
1Towards matching the voltage direction quick slant.When improving control signal B, tilt voltage V
2The time difference of improving control signal B and improving between the control signal A defines wakeup time, and wakeup time can be very short, thereby maximizes the length of one's sleep, and saves power supply to greatest extent.When finishing to transmit pulse train, reduce control signal B, after this reduce control signal A.According to the example of Fig. 9, in Figure 10, when improving control signal A next time, the higher power level of its definition.In addition, at voltage V
1Go up with dashed lines superimposed voltage V
2
Except that power and pulse train control, can use same structure to carry out amplitude modulation.With reference to Figure 11, this figure is a kind of waveform, expression burst AM operation.The output signal of representing the switching regulator conversion in the solid line mode.When pulse train began, the output signal of switch mode converters was inclined upwardly.As selection, just shown in dotted line, when linear regulator was realized all amplitude modulation on output signal, switch mode converters was inclined upwardly towards the fixed level direction.From view of efficiency, preferably switch mode converters realizes amplitude modulation, thereby generates output signal, and when ignoring noise, this signal is than the high small fixed offset delta V of required output signal.In fact noise in the output signal of linear regulator removal switch mode converters makes this signal reduce Δ V.Dotted line among Figure 11 is represented the output signal of linear regulator.When finishing pulse train, this signal is downward-sloping.
The control fully that keeps output signal power level (average power of signal).For example, as shown in figure 12, follow-up pulse train may occur in higher power level.Compare with Figure 11, in Figure 12, all signal appropriate change ratios are to realize higher average power output.
Make signal creating method complicated although on phase modulated signal, add amplitude modulation,, usually this we need just because this signal takies still less bandwidth than simple phase modulated signal usually.With reference to Figure 13, this figure is to use the block diagram of the polar modulation architecture of the high efficiency amplifier of described type up to now.This polar modulation architecture can realize any required modulation.Data-signal is applied to modulating coder, and the latter generates amplitude and phase signal.Phase signal is applied to support that the carrier wave of phase modulated generates piece, generates piece to this simultaneously and use harmonic ringing.Then, the nonlinear power amplifier with the above-mentioned type amplifies the signal that generates.Simultaneously, amplitude signal is applied to the amplitude excitations device.The amplitude excitations device is the received power control signal also.In response, the amplitude excitations device generates the operating voltage that is applied to nonlinear amplifier.Shown in the dotted line among Figure 13,, realize amplitude excitations device and nonlinear amplifier according to same way as shown in Figure 7 described above.
Except that other were used, described up to now modulated structure was suitable for using in cellular handset.Also need efficient RF signal to generate in the cellular telephone base stations.Yet the base station is higher than the operating power of mobile phone.Following structure is used to realize that high power, efficient RF signal generate.
With reference to Figure 14, first high power, efficient amplitude modulation RF amplifier comprise many switching regulator power amplifiers (SMPA) piece, for example, realize each amplifier piece in mode shown in Figure 7.The RF signal that needs are amplified is input in all public SMPA pieces.Amplitude excitations device response amplitude input signal generates the independent control signal of each SMPA piece.The add up output signal of all SMPA pieces is to generate single synthesized output signal.
Specifically, amplitude modulation radio frequency amplifier shown in Figure 14 comprises: a plurality of amplifier modules (five SMPA square frames as shown in Figure 14); A radiofrequency signal (RF imports (phase place)) is shared and is applied on these amplifier modules for all radio-frequency power amplifiers in these a plurality of amplifier modules; With an amplitude excitations device.In addition, as shown in Figure 7, each amplifier module comprises: a switch mode converters (the SM transducer shown in Fig. 7); A linear regulator; Amplitude excitations device (among Fig. 7 not label); With a radio-frequency power amplifier (SMPA).This switch mode converters has: a power input (V
DC); A power take-off (V
1); With a control input end (A).This linear regulator has: a power input (V
1); A power take-off (V
2) and a control input end (B).Power input (the V of linear regulator
1) be coupled on the power take-off of switch mode converters.Amplitude excitations device (among Fig. 7 not label) is in response to a modulation signal (PL/BURST/MOD), be used to produce one first control signal (A), this first control signal is coupled to the control input end of switch mode converters, also be used to produce one second control signal (B), this second control signal is coupled to the control input end of linear regulator.Each radio-frequency power amplifier (SMPA) has a kind of nonlinear operation pattern.Power take-off (the V of linear regulator
2) operating voltage of radio-frequency power amplifier is provided.In this embodiment shown in Figure 14, for each radio-frequency power amplifier produces independent amplitude excitations signal respectively, as among the figure from the vertical line separately of amplitude excitations device to five a SMPA square frame shown.In the embodiment of shown in Figure 16 and another substitutability that will be explained below, a single amplitude excitations signal is shared for all radio-frequency power amplifiers, and be applied on it, as among the figure from the amplitude excitations device and be branched off into shown in each the single vertical line among five SMPA square frames like that.
By reference Figure 15, be appreciated that the mode of operation of the amplifier of Figure 14.Whole amplitude signals of amplitude excitations device are represented to be applied in the left side.The SMPA pumping signal that is applied to each SMPA of the right expression amplitude excitations device output.Note that each pumping signal sum generates whole amplitude signals.
Figure 16 represents the another kind of execution mode of high power amplifier.In the present embodiment, generate a public pumping signal, be applied to each SMPA then, rather than generate the pumping signal of each SMPA respectively.Specifying constantly, the value that makes public pumping signal is N/one who is applied to whole amplitude signals of amplitude excitations device, and wherein N is the number of SMPA.Figure 17 represents its result.In addition, note that each pumping signal sum generates whole amplitude signals.
Referring now to Figure 18, the figure shows block diagram according to the RF switching regulator amplifier of another kind of execution mode.The RF input signal is applied to the nonreactive exciting circuit.Exciting circuit is connected to active equipment, with excitation active equipment switch.The active equipment switch is connected to laod network, and the latter generates and to be applied to the load RF output signal of (as, antenna).The best rapid time variable power supply of realizing by tandem compound switch mode power and linear regulator, with application of power in the active equipment switch, so that change the operating voltage of active equipment switch.By changing operating voltage, can realize power control, pulse train control and modulation in a manner described with controlled manner.
The active equipment switch can be bipolar transistor or FET transistor.With reference to Figure 19, this figure is the block diagram of the part of RF switching regulator amplifier, and wherein the active equipment switch is the bipolar transistor with collector electrode, emitter and base terminal.By RF choke L, the collector electrode of bipolar transistor N1 is connected to operating voltage V
PA, and be connected to output matching network.The emitter of bipolar transistor N1 is connected to circuit (AC) ground connection.
The base stage of bipolar transistor N1 is connected to the emitter of another bipolar transistor N2 (driver transistor) in the Darlington mode.The collector electrode of driver transistor N2 is connected to operating voltage V
DRIVER, and be connected to shunt capacitance.Related with driver transistor N2 is a bias network, and in illustrated embodiment, this network comprises three resistance, R1, R2 and R3.Resistance R 1 is connected to circuit ground from the emitter of driver transistor.Resistance R 2 is connected to ground connection from the base stage of driver transistor.Resistance R 3 is connected to V from the base stage of driver transistor N2
DRIVERBy DC isolation capacitance C
In, the RF input signal is applied to the base stage of driver transistor.
With reference to Figure 20, output network can be taked impedance matching transmission line TL and capacitor C
OutForm.
Shown in the waveform 1 of Figure 21, the RF input voltage signal is sinusoidal wave.Shown in waveform 2, upwards move horizontally input voltage, with the voltage of the base stage that generates driver transistor N2.Shown in waveform 3, V of the emitter voltage of driver transistor N2 decline
Be, and be applied to the base stage of switching transistor N1.When positive half period began, driver transistor N2 was as emitter follower, and its output (emission) voltage is well below the connection voltage of switching transistor N1, so switching transistor N1 disconnects.As shown in figure 22, when signal increased, driver transistor N2 connected switching transistor N1, and makes it saturated.As shown in figure 23, electric current passes through RF choke L and switching transistor N1, and works as capacitor C
OutDuring discharge, output voltage reduces.When near positive half period terminal, the output voltage of driver transistor N2 drops to below the connection voltage of switching transistor N1, thereby allows its disconnection.Select the value of resistance R 1 to disconnect fast down to switching transistor N1.Electric current continues by RF choke L, to capacitor C
OutCharging, and output voltage is improved.
With reference to Figure 24, this figure is the schematic diagram of the part of RF switching regulator amplifier, and wherein the active equipment switch is the FET transistor (MESFET, JFET, PHEMT etc.) with drain electrode, source electrode and grid lead wire.By RF choke L1, the drain electrode of FET transistor M1 is connected to operating voltage V
PA, be connected to output network simultaneously.The transistorized source electrode of FET is connected to circuit (AC) ground connection.
By a big value resistance R 1, from power supply-V
BThe transistorized grid of bias voltage FET, and, be connected to a pair of bipolar transistor (driver transistor) that connects with push-pull configuration by a DC isolation capacitance C1.Driver transistor comprises a NPN transistor N1 and a PNP transistor P1.The collector electrode of NPN driver transistor N1 is connected to operating voltage V
CC, be connected to shunt capacitance simultaneously.The collector electrode of PNP driver transistor is connected to negative reference voltage-V
B, be connected to shunt capacitance simultaneously.The base stage that connects driver transistor in public mode.Big value resistance R 2 is connected the common node of each electrical mains with R3.
Connect npn bipolar transistor N2 in public base configuration mode.By resistance R 4, the emitter of bipolar transistor is connected to-V
B, and be connected to the RF input signal by capacitor C 3.By inductance L 2, the collector electrode of bipolar transistor is connected to V
CC, be connected to shunt capacitance simultaneously.
With reference to Figure 25, the figure shows the input voltage waveform 1-4 of the circuit of Figure 24.Input voltage 1 is moved horizontally a V downwards
Be(formation voltage 2) is applied to the emitter of bipolar transistor N2 then.Utilize the influence of inductance L 2, generate a big voltage swing 3 at bipolar transistor N2 collector electrode.Move horizontally above voltage swing downwards,, voltage 4 is applied to the base stage of the driver transistor of node N with formation voltage 4.In the operation, during positive half period, disconnect bipolar transistor N2 at first.Electric current enters the capacitor C 2 that links to each other with the right base stage of transistor by inductance L 2, thereby makes NPN transistor N1 connect, and makes PNP transistor P1 disconnect (Figure 26).From V
CCPower supply is to DC isolation capacitance C1 charging, thereby the grid potential energy of increase FET M1 makes its connection (Figure 27).During negative half-cycle, connect bipolar transistor N2.Electric current is by inductance L 2, by transistor N2, arrival-V
BMain line.Electric current flows out the base stage of PNP transistor P1, connects this transistor.DC isolation capacitance C1 discharge, thus the grid potential energy of reduction FET M1 makes its disconnection.Output network moves according to above-mentioned same way as.
Referring now to Figure 28, the figure shows the schematic diagram of the operable multistage RF power amplification circuit of above-mentioned exciting circuit.Use is by capacitor C
1, capacitor C
2And inductance L
1The input matching circuit of forming is provided with the input impedance of this circuit.With drive(r) stage M
1With final stage M
2Be expressed as FET, although can use bipolar transistor in other embodiments.By comprising RF choke L
3And capacitor C
5The drain bias network, with FET M
1Drain electrode be connected to supply voltage V
D1Equally, by comprising RF choke L
7And capacitor C
10The drain bias network, with FET M
2Drain electrode be connected to supply voltage V
D2
Be respectively a grade M
1And M
2The grid bias network is provided.At level M
1Situation in, the grid bias network is by be connected to voltage V at common node
G1Inductance L
2, capacitor C
3And capacitor C
4Form.At level M
2Situation in, the grid bias network is by be connected to voltage V at common node
G2Inductance L
6, capacitor C
8And capacitor C
9Form.
Utilization is by inductance L
4And capacitor C
6The interstage network of the series LC combination expression of forming connects drive(r) stage and final stage, selects inductance and capacitance to have final stage M so that provide
2The resonance of input capacitance amount.With final stage M
2Be connected to the conventional load network, be expressed as by capacitor C in this example
11, inductance L
8And capacitor C
12Form CLC Pi network, wherein according to final stage M
2Characteristic, determine electric capacity and inductance value.
In exemplary embodiment, component value is as follows, and wherein the measurement unit of electric capacity is a micromicrofarad, and the measurement unit of inductance is nanohenry:
Table 1
| Electric capacity | pf | Inductance | nh | Voltage | V |
| C 1 | 27 | L 1 | 8.2 | V d1 | 3.3 |
| C 2 | 10 | L 2 | 33 | V d2 | 3.2 |
| C 3 | 0.01 | L 3 | 33 | V g1 | -1.53 |
| C 4 | 27 | L 4 | 4.7 | V g2 | -1.27 |
| C 5 | 27 | L 5 | NA | ||
| C 6 | 27 | L 6 | 39 | ||
| C 7 | NA | L 7 | 15 | ||
| C 8 | 27 | L 8 | 2.7 | ||
| C 9 | 0.01 | ||||
| C 10 | 27 | ||||
| C 11 | 1.5 | ||||
| C 12 | 5.6 |
In the example of Figure 28, with switch mode operation drive(r) stage (level M
1).With reference to Figure 29, the figure shows the level M of node A
2The level M of input voltage, Node B
1The level M of drain voltage, node C
2The level M of drain voltage, node D
1Drain current and node E the level M
2The waveform of drain current.Note that final stage-level M
2(waveform A)-the peak value of grid voltage be higher than voltage in the conventional design far away.In said structure, the input of switch drives enough high, thereby can reduce the operating voltage of drive(r) stage.Like this, can further reduce the DC power supply of exciter, thereby improve PAE.
By using the circuit of shown type, when power output was 2W, the PAE of measurement was 72%.
Therefore, the power amplifier circuit structure that comprises exciting circuit and multistage amplifier circuit has been described, this structure need not to feed back just can accurately generate has the required RF waveform that high power increases efficient.
Claims (21)
1. a variable output radio-frequency power amplifier is characterized in that, comprising:
Voltage regulating device, be used for the control signal of one of them according to being used to carry out level control, pulse train control and modulation, be created in a specific voltage in the voltage range, described voltage regulating device comprises: a switch mode converters level and a linear regulator level; With
A power amplifier, comprise: a final stage amplifying stage, this final stage amplifying stage has described specific voltage as supply voltage, also has a pumping signal, this pumping signal can two states-hard on-state and hard off-state-between make described final stage amplifying stage repeat to be energized, and need not in the appreciable time this amplifier of operation in the linear operation zone;
Wherein said amplifier is controlled under the situation that does not need continuous or frequent feedback adjustment.
2. a variable output radio-frequency power amplifier is characterized in that, comprising:
Voltage regulating device is used for being created in a specific voltage in the voltage range according to the control signal of carrying out one of level control, pulse train control and modulation at least, and this voltage regulating device comprises:
A switch mode converters level and a linear regulator level; With
A power amplifier, this amplifier comprises: a final stage amplifying stage, this final stage amplifying stage has specific voltage as supply voltage, also has a pumping signal, this pumping signal can two states-hard on-state and hard off-state-between this final stage amplifying stage of repeat actuation, and need not in the appreciable time operational amplifier in the linear operation zone;
Wherein said amplifier is controlled under the situation that does not need continuous or frequent feedback adjustment.
3. device according to claim 2 is characterized in that, also comprises:
A switch mode converters level, it is set for provides thick level control and comes work as described switch mode converters level; With
A linear regulator level, being set for provides the control of meticulous slope and comes work as described linear regulator level.
4. variable output radio-frequency power amplifier according to claim 3 is characterized in that, also comprises: the power amplifier of a hard restriction, come work as described power amplifier.
5. variable output radio-frequency power amplifier according to claim 4 is characterized in that, described power amplifier is a kind of regulex of selecting from Class A, Class B and class C amplifier group.
6. variable output radio-frequency power amplifier according to claim 3 is characterized in that, described power amplifier is a switching regulator amplifier.
7. variable output radio-frequency power amplifier according to claim 3 is characterized in that, described power amplifier is a class C amplifier.
8. variable output radio-frequency power amplifier according to claim 2 is characterized in that, also comprises: a switch mode converters level, it is set for provides level control and slope control, in order to come work as described switch mode converters level.
9. variable output radio-frequency power amplifier according to claim 2 is characterized in that, also comprises: a linear regulator level, it is set for provides slope control and level control, in order to come work as described linear regulator level.
10. variable output radio-frequency power amplifier according to claim 2, it is characterized in that, also comprise: be used to receive and respond the device of described control signal, be used to described one first control signal of switch mode converters level generation and be one second control signal of described linear regulator level generation.
11. variable output radio-frequency power amplifier according to claim 2, it is characterized in that, also comprise: an amplitude excitations device, respond a modulation signal, be used to described one first control signal of switch mode converters level generation and be one second control signal of described linear regulator level generation.
12. variable output radio-frequency power amplifier according to claim 2, it is characterized in that, also comprise: be used to respond a phase control signal and the device that produces a carrier signal, this carrier signal has the phase modulated characteristic, and this carrier signal is applied to described radio-frequency power amplifier.
13. variable output radio-frequency power amplifier according to claim 12 is characterized in that, also comprises: an amplitude control signal, in order to come work as described modulation signal, described radiofrequency signal is amplitude modulation.
14. variable output radio-frequency power amplifier according to claim 13 is characterized in that, also comprises: a modulating coder, respond a data-signal, be used to produce described amplitude control signal and described phase control signal.
15. variable output radio-frequency power amplifier according to claim 14 is characterized in that, also comprises: a modulating coder, it is set in polar coordinate system as described modulating coder work.
16. variable output radio-frequency power amplifier according to claim 2 is characterized in that, also comprises:
A plurality of amplifier modules, each amplifier module comprises:
A switch mode converters has: a power input, a power take-off and a control input end;
An adjuster has: a power input, a power take-off and a control input end, and the described power input of this adjuster is coupled to the described power take-off of described switch mode converters;
An amplitude excitations device, respond a modulation signal, be used to produce one first control signal, this first control signal is coupled the described control input end with described switch mode converters, also produce one second control signal, this second control signal is coupled to the described control input end of described adjuster; With
A radio-frequency power amplifier has a kind of nonlinear operation pattern, and the power take-off of described adjuster provides the operating voltage of described radio-frequency power amplifier;
A radiofrequency signal is shared for all described radio-frequency power amplifiers; With
An amplitude excitations device responds all amplitude signals, is used to produce one or more amplitude excitations signals, and this amplitude excitations signal application is in each radio-frequency power amplifier.
17. variable output radio-frequency power amplifier according to claim 16, it is characterized in that, also comprise: an amplitude excitations device, respond all amplitude signals, be used for respectively for each radio-frequency power amplifier produces an independent amplitude excitations signal, to work as described amplitude excitations device.
18. variable output radio-frequency power amplifier according to claim 16, it is characterized in that, also comprise: an amplitude excitations device, respond all amplitude signals, be used to produce a single amplitude excitations signal, this amplitude excitations signal is shared for all radio-frequency power amplifiers, to work as described amplitude excitations device.
19. the method for a control power amplifiers is characterized in that, comprising:
Control signal according to carrying out one of level control, pulse train control and modulation at least produces specific voltage;
Supply voltage as the final stage amplifying stage of power amplifier is applied to this power amplifier with specific voltage; And
Need not in the appreciable time this amplifier of operation in the linear operation zone, just can two states-hard on-state and firmly off-state-between this final stage amplifying stage of repeat actuation;
Wherein do not need continuously or situation that frequent feedback is adjusted under control amplifier.
20. method according to claim 19 is characterized in that, also comprises: radio-frequency input signals is applied to radio frequency amplifier, and wherein radio-frequency input signals is a phase modulated signal.
21. method according to claim 19 is characterized in that, also comprises:
In polar coordinates, data are encoded, so that produce an amplitude signal and a phase signal; With
According to phase signal, produce radio-frequency input signals;
Wherein said modulation signal is led according to described amplitude signal.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/362,880 | 1999-07-29 | ||
| US09/362,880 US6198347B1 (en) | 1999-07-29 | 1999-07-29 | Driving circuits for switch mode RF power amplifiers |
| US09/564,548 US7265618B1 (en) | 2000-05-04 | 2000-05-04 | RF power amplifier having high power-added efficiency |
| US09/564,548 | 2000-05-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1371545A CN1371545A (en) | 2002-09-25 |
| CN1249912C true CN1249912C (en) | 2006-04-05 |
Family
ID=27001827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB008120587A Expired - Lifetime CN1249912C (en) | 1999-07-29 | 2000-07-31 | High-efficiency modulating RF amplifier |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1201024A1 (en) |
| JP (1) | JP2003506941A (en) |
| KR (1) | KR20020059343A (en) |
| CN (1) | CN1249912C (en) |
| AU (1) | AU6615700A (en) |
| WO (1) | WO2001010013A1 (en) |
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- 2000-07-31 CN CNB008120587A patent/CN1249912C/en not_active Expired - Lifetime
- 2000-07-31 KR KR1020027001158A patent/KR20020059343A/en not_active Application Discontinuation
- 2000-07-31 JP JP2001514531A patent/JP2003506941A/en active Pending
- 2000-07-31 AU AU66157/00A patent/AU6615700A/en not_active Abandoned
- 2000-07-31 EP EP00953760A patent/EP1201024A1/en not_active Withdrawn
- 2000-07-31 WO PCT/US2000/020841 patent/WO2001010013A1/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| AU6615700A (en) | 2001-02-19 |
| JP2003506941A (en) | 2003-02-18 |
| EP1201024A1 (en) | 2002-05-02 |
| WO2001010013A1 (en) | 2001-02-08 |
| KR20020059343A (en) | 2002-07-12 |
| WO2001010013A9 (en) | 2002-09-06 |
| CN1371545A (en) | 2002-09-25 |
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