CN1241067C - Method for adjusting focus position - Google Patents

Method for adjusting focus position Download PDF

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CN1241067C
CN1241067C CN 02127492 CN02127492A CN1241067C CN 1241067 C CN1241067 C CN 1241067C CN 02127492 CN02127492 CN 02127492 CN 02127492 A CN02127492 A CN 02127492A CN 1241067 C CN1241067 C CN 1241067C
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light
angle
image
phase
degrees
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CN 02127492
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CN1472600A (en )
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吴元薰
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南亚科技股份有限公司
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Abstract

一种用于半导体元件的微影制造方法中曝光步骤的聚焦方法,包括:提供一测试光罩,该测试光罩是相位移光罩,具有一透明基板,所述透明基板表面具有一遮光层,用以露出一相角0度透光区与一相角90度透光区,其中上述相角0度透光区与上述相角90度透光区的尺寸相同;提供一光源,保持与上述测试光罩一距离,透过上述测试光罩在一基底表面曝光出对应上述相角0度透光区的第一影像与对应上述相角90度透光区的第二影像;测量上述第一影像与上述第二影像的尺寸;若上述第一影像与上述第二影像的尺寸不相等,则改变上述光源与上述测试光罩的间距,重复上述步骤,直到上述第一影像尺寸与上述第二影像尺寸相等为止。 Focusing method lithography method for manufacturing a semiconductor element used in the exposure step, comprising: providing a test reticle, the reticle is a test phase shift mask, having a transparent substrate, the transparent substrate having a light-shielding layer surface for a phase angle of 0 degrees exposing the light-transmitting region and a phase angle of 90 degrees transmissive region, wherein the same size as the phase-angle of 0 degree and the phase-angle of the light-transmitting region of the light-transmissive region 90; providing a light source, and holding distance above a test mask, exposing a substrate surface of the first image and the second image corresponding to the angle of 90 degrees relative to the above-described light-transmissive region corresponding to the phase-angle of 0 degrees is transmitted through the transmissive region test photomask; the first measurement an image size of the second image; if the first image and the second image size is not equal, the light source is changed with the pitch of the test reticle, repeating the above steps until the first image and the first dimension two image size equal.

Description

调整聚焦位置的方法 The method of adjusting a focus position

技术领域 FIELD

本发明涉及一种半导体元件的微影(photolithography)制造的方法,且特别是有关于曝光(exposure)步骤的聚焦方法。 The present invention relates to a semiconductor element lithography (photolithography) manufacturing method, and more particularly to a method focusing on exposure (Exposure) step.

背景技术 Background technique

在半导体集成电路的制造过程中,微影成像(lithography)工艺居于极重要的地位,由该工艺才能将设计的图案精确地定义在光阻层上,然后利用蚀刻程序将光阻层的图案转移到半导体基板上面制得所需的线路构造。 In the manufacturing process of semiconductor integrated circuits, the lithography imaging (Lithography) resident process very important position, by this process can be designed to precisely define a pattern on the photoresist layer, and etching the patterned photoresist layer program transfer above the semiconductor substrate to obtain the desired line structure. 一般而言,微影工艺主要包括涂底(priming)、光阻涂布(coating)、预烤(或称软烤)、曝光(expose)、曝后处理、显影、以及硬烤等数个步骤。 Generally, the lithography process include priming (priming), photoresist coating (coating,), pre-bake (or soft-baked), exposed (EXPOSE), post-exposure processing, developing, and hard-baking step and several . 其中曝光程序的解析度(resolution)大小是元件集成度能否更进一步提升的关键因素,各大半导体厂家无不积极投入研发以谋求更上一层楼。 Where the resolution of the exposure program (resolution) is a key factor in the size of component integration can further enhance, the major semiconductor manufacturers are all actively involved in research and development in order to seek a higher level. 因此,曝光程序必需相当精确,才能真实地将设计图案呈现出来。 So, quite accurate exposure procedures necessary to truly design patterns presented.

进行曝光程序的首要关键是聚焦步骤。 The first key exposure program is focusing steps. 欲得到精准的曝光图案,就必须将光源与光罩的对应位置调整至最佳聚焦(best focus)位置。 To obtain accurate exposure pattern corresponding to the light source must be adjusted to the position of the reticle best focus (best focus) position. 传统上,半导体厂在微影工艺中的聚焦方法通常是利用一具有菱形透光区的光罩,在曝光机台借助光源通过上述光罩后,呈现出菱形的曝光影像,再由肉眼判断曝光影响的真实程度。 Conventionally, a semiconductor factory focusing method in a lithography process typically using a photomask having a light-transmitting diamond-shaped area, the exposure light through the photomask by machine, showing a diamond exposed image, then the exposure is determined by the naked eye the true extent of the impact. 不断调整聚焦位置,直到肉眼判断其曝光影像具有可接受的真实度为止,即当曝光影像的形状近似于预期的菱形图案时,视为聚焦步骤完成。 Continuously adjust focus position, exposure until it is determined visually acceptable image with fidelity up, i.e., when the shape of the image approximates the expected exposure diamond pattern, focusing step considered complete.

然而,现有的曝光机台聚焦方法是由主观人为的判断而决定,其准确性颇受质疑。 However, the conventional exposure tool focus is determined by the subjective human judgment, which have been challenged accuracy. 而且,在进行每一次的曝光程序前,都需更换上述的聚焦用光罩进行聚焦步骤,待聚焦完成后,再更换上微影程序所需的光罩,如此反复更换光罩,程序复杂且耗费时间。 Furthermore, exposure is performed each time before the programs are to be replaced with the above-described focus mask focusing step After completion of the focus, then the replacement procedure required on the reticle lithography, and so forth reticle replacement, complicated procedures and waste time.

发明内容 SUMMARY

有鉴于此,为了解决上述问题,本发明的主要目的在于提供一种调整聚焦位置的方法,以避免传统上以视觉判断聚焦所造成的误差。 In view of this, in order to solve the above problems, the main object of the present invention is to provide a method for adjusting a focus position, in order to avoid the traditional visual judgment error caused by the focusing.

本发明的另一目的是提供一种调整聚焦位置的方法,可在进行任何曝光程序时同步进行,不需任何额外的设备与步骤,可简化聚焦的步骤。 Another object of the present invention is to provide a method for adjusting the focus position, when simultaneously performing any exposure sequence may be, without any additional equipment and steps, the step of focusing simplified.

本发明是利用一特殊的光学原理,其特点在于当光源落于最佳聚焦(bestfocus)位置时,透过具有不同相位的透光区,则两区所曝光出的能量强度一致且曝光影像大小相同。 The present invention utilizes a special optics, characterized in that when the light source is consistent fall in the best focus (bestfocus) position, passes through the transparent regions have different phases, the two out of the exposed area and the exposure energy intensity image size the same. 因此,反过来说,当不同相位透光区下曝光所得的影像尺寸相同时,即表示此曝光程序的聚焦位置相当精确。 Therefore, conversely, when the image size obtained at different phases of the exposure light-transmitting area is the same, this means that the focus position of the exposure sequence is quite accurate.

为实现上述目的,本发明提出一种调整聚焦位置的方法,此方法的步骤主要是包括:首先,提供一测试光罩,该测试光罩是相位移光罩,具有一透明基板,上述透明基板表面具有一遮光层,用以露出一相角0度透光区与一相角90度透光区,其中上述相角0度透光区与上述相角90度透光区的尺寸相同。 To achieve the above object, the present invention provides a method for adjusting the focus position, the main steps of the method comprising: providing a test reticle, the reticle is a test phase shift mask, having a transparent substrate, the transparent substrate surface having a light-shielding layer for a phase angle of 0 degrees to expose the light-transmitting region and a transmissive region relative angle of 90 degrees, the same size as the phase-angle of 0 degree wherein the light-transmitting region and the phase angle of 90 degrees above the light-transmitting region. 接着,提供一光源,保持与上述测试光罩一距离,透过上述测试光罩于一基底表面曝光出对应上述相角0度透光区的第一影像与对应上述相角90度透光区的第二影像。 Next, there is provided a light source, to maintain a distance from said test mask, exposed to a surface of the substrate corresponding to the phase-angle of 0 degrees and the light-transmitting region of the first image corresponding to the above-described angle of 90 degrees relative to the light-transmitting region through said test reticle the second image. 然后,测量上述第一影像与上述第二影像的尺寸。 Then, measure the size of the first image and the second image. 若上述第一影像与上述第二影像的尺寸不相等,则改变上述光源与上述测试光罩的间距,重复进行如前所述的曝光程序,直到上述第一影像尺寸与上述第二影像尺寸相等为止。 If the first image and the second image size is not equal, the changing pitch of the light source and the test photomask, repeated exposure sequence as described above, until the size of the first image and the second image size is equal to until.

如前所述,上述测试光罩是相位移光罩,例如:交错式相位移光罩(alternatephase shift mask)、减光型相位移光罩(attenuate phase shift mask)或边缘型相位移光罩(rim phase shift mask)。 As described above, the above-described photomask is a phase shift mask testing, for example: an interleaved phase shift mask (alternatephase shift mask), the dimming type phase shift mask (attenuate phase shift mask) or an edge type phase shift mask ( rim phase shift mask). 并且,上述透明基板可由透光率100%的石英(quartz)玻璃所构成,上述遮光层可由金属铬(Cr)所构成。 Further, the light transmittance of the transparent substrate may be formed of 100% silica (Quartz) composed of glass, the light shielding layer may be chromium (Cr) is constituted. 如此一来,上述相角0度透光区的透光率约为100%,而上述相角90度透光区的透光率约为100%,至于上述遮光层的透光率则约为0%。 Thus, the light transmittance of the above-described light-transmitting region of the phase angle 0 is about 100%, while the transmittance of the phase-angle of 90 degrees is about 100% transmissive region, as the light transmittance of the light shielding layer is about 0%.

如前所述,上述相角0度透光区与上述相角90度透光区的间距不大于上述相角0度透光区的尺寸。 As described above, the phase angle of 0 degrees pitch of the light-transmitting region and the light-transmissive region 90 is not larger than the size of the phase angle of the phase angle of 0 degrees transmissive region.

本发明的有益效果是,以实际数值判断聚焦,准确度相当高,可以避免传统上仅以视觉判断是否对焦完成所造成的误差。 Advantageous effect of the invention is that the actual value of focusing is determined, a very high accuracy, can be avoided only by determining whether the visual focus error caused complete conventionally. 并且本发明的测试光罩面积极小,因此可设计于任何工艺过程所需的光罩,在进行任一曝光程序前先行聚焦对准,不需任何额外的设备,也不需更换光罩,相当方便,又可缩短制造时间。 And the test area of ​​the photomask of the present invention is extremely small, it may be designed in any desired photomask process, before performing any one of the preceding aligning a focus-exposure process, without any additional equipment, but also need to replace the mask, very convenient, but also shorten the manufacturing time. 避免现有的聚焦必须中断其他曝光过程所带来的不便。 To avoid the conventional focus must interrupt other inconvenience caused by the exposure process.

下面结合附图和具体实施方式对本发明作进一步说明。 The present invention will be further described in conjunction with the accompanying drawings and specific embodiments.

附图说明 BRIEF DESCRIPTION

图1是本发明的一较佳实施例的流程图;图2是显示本发明的一较佳实施例的聚焦测试光罩的俯视图;图3是显示图1的曝光测试光罩进行曝光所得的空间与能量强度分布图;图4A是显示聚焦不精确情况下曝光结果的示意图;图4B是显示聚焦不精确情况下曝光结果的另一示意图;图5是显示精确聚焦情况下曝光结果的示意图。 FIG 1 is a flowchart of a preferred embodiment of the present invention; FIG. 2 is a plan view of a focus test preferred embodiment of the present invention, the embodiment of FIG display photomask; FIG. 3 is a graph showing a test photomask for exposure resulting exposure space and the energy intensity profile; FIG. 4A is a schematic view of an exposure result in inaccurate focusing Show; FIG. 4B is a schematic view of another case of exposure result in inaccurate focusing; FIG. 5 is a schematic view of an exposure result in precise focusing Show.

具体实施方式 detailed description

以下配合图1的流程图,详细说明本发明的一较佳实施例。 With the flowchart of FIG. 1, a detailed description of preferred embodiments of the present invention.

首先,在步骤800,提供一测试光罩100置入一曝光机台,例如:扫描步进机(scan-stepper)或步进机(stepper)。 First, at step 800, providing a test reticle into an exposure machine 100, for example: scanning stepper (scan-stepper) or a stepper machine (stepper). 上述测试光罩100可以是:交错式相位移光罩(alternate phase shift mask)、减光型相位移光罩(attenuate phase shiftmask)或边缘型相位移光罩(rim phase shift mask),作为曝光聚焦对准的辅助工具。 Said test reticle 100 may be: an interleaved phase shift masks (alternate phase shift mask), the dimming type phase shift mask (attenuate phase shiftmask) or an edge type phase shift mask (rim phase shift mask), as the exposure focusing alignment aids.

上述测试光罩100的结构如图2所示,具有一透明基板(未图示),可由透光率100%的石英(quartz)玻璃所构成,且上述透明基板表面具有一材质例如为金属铬(Cr)的遮光层102,用以露出至少一相角0度透光区104与至少一相角90度透光区106。 Configuration of the test photomask 100 shown in Figure 2, having a transparent substrate (not shown), may be 100% of the light transmittance of the quartz (Quartz) composed of glass, and the transparent substrate having a surface made of chromium, for example, (Cr) of the light-shielding layer 102 to expose at least a phase angle of 0 degrees transmissive region 104 and at least one phase angle of 90 degrees transmissive region 106. 透光区的相角可以由该区域的透明基板厚度所决定,因此上述相角0度透光区104与上述相角90度透光区的透明基板厚度不相同。 The phase angle of the transmission area may be determined by the area of ​​the transparent substrate thickness, and therefore the phase-angle of 0 degrees transmissive region 104 and the transparent substrate thickness of the angle of 90 degrees relative to the light-transmitting region is not the same. 但是,上述相角0度透光区104与上述相角90度透光区106的平面尺寸(长和宽)相同,约为150~250nm(纳米),并且上述相角0度透光区与上述相角90度透光区的间距约为100~200nm,不大于上述相角0度透光区的尺寸。 However, the phase-angle of 0 degree and the phase-transmissive region 104 angle of 90 degrees in the transmissive region 106 planar size (length and width) the same, about 150 ~ 250nm (nanometers), the phase angle of 0 degrees and said light-transmissive region a pitch angle of 90 degrees relative to the above-described light-transmitting region is about 100 ~ 200nm, larger than the size of the phase angle is not 0 degree transmission area. 另外,上述相角0度与90度透光区可以各为单个相邻排列或多个间隔交错排列。 Further, the phase angle of 0 degrees and 90 degrees of each light transmissive region may be arranged as a single or a plurality of adjacent staggered intervals. 再者,上述相角0度透光区的透光率约为100%,而上述相角90度透光区的透光率约为100%,至于上述遮光层的透光率则约为0%。 Further, the light transmittance of the above-described light-transmitting region of the phase angle 0 is about 100%, while the transmittance of the phase-angle of 90 degrees is about 100% transmissive region, as the light transmittance of the light shielding layer is about 0 %. 上述测试光罩100的面积极小,可以单独使用或合并制作于任一工艺过程所需的光罩边缘,并不会影响光罩原有的图案,又可于曝光前先行聚焦对准。 Area of ​​the test reticle 100 is extremely small, it may be used alone or in combination to create a process according to any desired mask edge, and will not affect the original mask pattern, but also before the first exposure focus aligned.

接着,在步骤802,将上述曝光机台所提供的一光源位置调整至与上述测试光罩100保持一距离,以选择适当的聚焦位置。 Next, at step 802, the position of a light source provided in the exposure machine was adjusted to maintain a distance from said test reticle 100, to select the proper focusing position.

其次,在步骤804,进行曝光程序,将上述测试光罩100的图案转移至于一基底(未图示)表面,如图4A和图4B所示,显现出一曝光影像200。 Next, in step 804, exposure process, the reticle pattern in the test as to transfer a substrate 100 (not shown) surface, as shown in FIG 4A and 4B, showing an exposure image 200. 上述曝光影像200中的第一影像204是经上述相角0度透光区104曝光所得的结果。 A first image 204 in the image 200 is the result of exposure of the exposure obtained above 104 degrees phase angle 0 through the light-transmitting region. 上述曝光影像200中的第二影像206是经由上述相角90度透光区106曝光所得的结果。 The second image 206 image 200 is the result of the exposure the exposure obtained in the above 106 phase angle of 90 degrees through the light-transmitting region.

根据光学原理,当光源位于最佳聚焦(best focus)位置时,透过两相邻的0度与90度透光区,则两区所曝光出影像的能量强度会一致且影像大小会相同。 The optical principle, when the light source is located in the optimum focus (best focus) position through two adjacent 0 ° and 90 ° light-transmitting area, the exposed area of ​​the two images will be a uniform energy density and the image will be the same size. 如图3所示,曲线A与曲线C皆未位于最佳聚焦位置,其曝光所得的影像强度与空间分布关系结果,分别在对应相位0度的区间与对应相位90度的区间的影像强度皆不相同。 As shown, curve A and curve C 3 positioned garnered the best focus position, which is the resultant exposure image intensity and spatial distribution of a result relation, respectively corresponding to the image intensity of the phase zone corresponding to phase 0 degrees and 90 degrees are section Are not the same. 反之,位于最佳聚焦位置曝光所得的曲线B在对应相位0度的区间与对应相位90度区间的影像强度相同,所以,接着步骤806的目的在于测量上述第一影像204与上述第二影像206的尺寸。 Conversely, the exposure resulting located best focus position corresponding to the curve B in the phase interval of 0 degrees and the same image intensity corresponding to the phase interval of 90 degrees, therefore, the purpose of step 806 is to then measure the first image and the second image 206 204 size of. 若上述第一影像与第二影像分别为多个,则计算其平均值。 If the first image and the second image are a plurality, then the average value was calculated. 根据上述原理,若上述第一影像204与上述第二影像206的尺寸不相等,如图3所示,则回溯至步骤802,重新调整上述光源与上述测试光罩100的间距。 According to this principle, if the first image 204 and the second image size is not equal to 206, shown in Figure 3, then back to step 802, re-adjust the pitch of the light source and the test photomask 100. 然后,再依序进行步骤804与806,如此反复重复进行如前所述的曝光程序,直到上述第一影像204的尺寸与上述第二影像206的尺寸相等为止,如图5所示。 Then, step 804, and 806 are sequentially performed, such as described above is repeated exposure sequence is repeated until the size of the first image 204 and second image 206 is equal to the size of the date, as shown in FIG. 如此一来,便达到了最佳聚焦位置。 In this way, we achieve the best focus position.

本发明的特征是利用一交错排列具相角0度与90度的光罩所分别曝光出的影像尺寸相等时,判断为最佳聚焦位置。 Feature of the present invention uses a staggered with equal 0 ° and 90 ° respectively exposing the photomask image size of the phase angle, it determines the best focus position.

综合上述,本发明具有下列优点:1.本发明的聚焦以实际数值判断聚焦,准确度相当高,可以避免传统上仅以视觉判断是否对焦完成所造成的误差。 In summary, the present invention has the following advantages: 1. The focus of the invention in determining the actual value of the focus, very high accuracy, can be avoided only by visually determining whether the error caused by the focusing completed conventionally.

2.本发明的测试光罩面积极小,因此可设计于任何工艺过程所需的光罩,在进行任一曝光程序前先行聚焦对准,不需任何额外的设备,也不需更换光罩,相当方便,又可缩短制造时间。 2. The test photomask according to the present invention, the area is extremely small, and therefore may be designed in any desired photomask process, before performing any one of the preceding aligning a focus-exposure process, without any additional equipment, nor do they need to replace a reticle , very convenient, but also shorten the manufacturing time. 避免现有的聚焦必须中断其他曝光过程所带来的不便。 To avoid the conventional focus must interrupt other inconvenience caused by the exposure process.

Claims (7)

  1. 1.一种调整聚焦位置的方法,其特征在于,包括:a.提供一测试光罩,该测试光罩是相位移光罩,具有一透明基板,所述透明基板表面具有一遮光层,用以露出一相角0度透光区与一相角90度透光区,其中上述相角0度透光区与上述相角90度透光区的尺寸相同;b.提供一光源,保持与上述测试光罩一距离,透过上述测试光罩在一基底表面曝光出对应上述相角0度透光区的第一影像与对应上述相角90度透光区的第二影像;c.测量上述第一影像与上述第二影像的尺寸;d.若上述第一影像与上述第二影像的尺寸不相等,则改变上述光源与上述测试光罩的间距,重复上述步骤b与步骤c,直到上述第一影像尺寸与上述第二影像尺寸相等为止。 1. A method for adjusting the focus position, characterized by comprising: a providing a test reticle, the reticle is a test phase shift mask, having a transparent substrate, the transparent substrate surface with a light-shielding layer was. to expose a phase angle of 0 degree with the light-transmitting region and a 90-degree angle of the light-transmitting region, wherein the phase-angle of 0 degree with the light-transmitting region and the size of the angle of 90 degrees is the same as the light-transmitting area;. b providing a light source, and holding distance above a test mask, exposing a substrate surface of the first image and the second image corresponding to the angle of 90 degrees relative to the above-described light-transmissive region corresponding to the phase-angle of 0 degrees is transmitted through the transmissive region test reticle; C measurements. the first image and the second image size; D if the first image and the second image size is not equal, the changing pitch of the light source and the mask test, repeat the above steps b and step C, until the. size of the first image and the second image size equal.
  2. 2.如权利要求1所述的调整聚焦位置的方法,其特征在于,所述的相角0度透光区与上述相角90度透光区的间距不大于所述相角0度透光区的尺寸。 2. The method for adjusting the focus position of claim 1, wherein the pitch of the phase angle of 0 degree and the phase-angle of the light-transmitting region of the light-transmissive region 90 is no greater than the angle of 0 degrees phase translucent the size of the area.
  3. 3.如权利要求1所述的调整聚焦位置的方法,其特征在于,所述的透明基板是由石英玻璃所构成。 The method of adjusting the focus position of claim 1, wherein said transparent substrate is composed of quartz glass.
  4. 4.如权利要求1所述的调整聚焦位置的方法,其特征在于,所述的遮光层是由金属铬所构成。 The method of adjusting the focus position as claimed in claim 1, wherein said light shielding layer is composed of chromium.
  5. 5.如权利要求1所述的调整聚焦位置的方法,其特征在于,所述的相角0度透光区的透光率为100%。 5. The method for adjusting the focus position of claim 1, wherein the light transmittance of the phase angle of 0 degrees 100% transmissive regions.
  6. 6.如权利要求1所述的调整聚焦位置的方法,其特征在于,所述的相角90度透光区的透光率为100%。 The method of adjusting the focus position as claimed in claim 1, wherein said light-transmissive phase angle of 90 degrees is 100% transmissive regions.
  7. 7.如权利要求1所述的调整聚焦位置的方法,其特征在于,所述的遮光层的透光率为0%。 7. The method for adjusting the focus position of claim 1, wherein said light-transmitting light-shielding layer is 0%.
CN 02127492 2002-08-02 2002-08-02 Method for adjusting focus position CN1241067C (en)

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CN100595676C (en) 2005-04-22 2010-03-24 上海集成电路研发中心有限公司;上海华虹(集团)有限公司 Adjusting method for long mask exposure focusing plane correction
US7532307B2 (en) 2005-06-30 2009-05-12 Asml Netherlands B.V. Focus determination method, device manufacturing method, and mask
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