CN1241054C - Half transmission and half reflection thin film transistor liquid crystal display panel and manufacturing method thereof - Google Patents
Half transmission and half reflection thin film transistor liquid crystal display panel and manufacturing method thereof Download PDFInfo
- Publication number
- CN1241054C CN1241054C CN 03103393 CN03103393A CN1241054C CN 1241054 C CN1241054 C CN 1241054C CN 03103393 CN03103393 CN 03103393 CN 03103393 A CN03103393 A CN 03103393A CN 1241054 C CN1241054 C CN 1241054C
- Authority
- CN
- China
- Prior art keywords
- layer
- film transistor
- thin film
- electrode
- reflection layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention discloses a liquid crystal display panel for a half-penetration half-reflection type thin film transistor (transflective TFT-LCD) and a manufacturing method of the liquid crystal display panel. The method comprises: a first conductive layer is formed above a basal plate; the first conductive layer is limited to form gates; the first conductive layer is covered by a dielectric layer; a channel is formed above the gates; a photoresist region block is formed; a second conductive layer is formed; the second conductive layer is limited to form a source electrode and a drain electrode above the gates, and a light reflecting layer is formed above the photoresist region block; a protection layer is used for covering; a protection layer is limited to form a first opening above the drain electrode, parts of the drain electrode are exposed, a second opening is formed above the light reflecting layer, and parts of the light reflecting layer are exposed. A transparent electrode is formed, and is electrically connected with the drain electrode and the light reflecting layer through the first opening and the second opening.
Description
Technical field
The present invention relates to a kind of liquid crystal display panel of thin film transistor (Thin Film Transistor LiquidCrystal Display, TFT-LCD) and manufacture method, particularly a kind of Transflective liquid crystal display panel of thin film transistor (transflective TFT-LCD) and manufacture method thereof.
Background technology
Along with the progress of science and technology, reflective TFT-LCD and Transflective TFT-LCD day by day play an important role on market.Especially in present extremely flourishing epoch of communications industry, Transflective TFT-LCD can be applicable in the display screen of mobile phone, so that the user is in the darkroom, or extremely bright outdoor, all can know the content that the identification screen is shown.
The manufacturing process of the reflecting type liquid crystal display panel of prior art will be illustrated among Figure 1A to Fig. 1 F.Please earlier with reference to Figure 1A.At first, provide a glass substrate 100, and above glass substrate 100, form a first metal layer, and utilize this first metal layer of photoetching technique patterning, with the grid 105 of formation thin film transistor (TFT) and the capacitance electrode 110 of storage capacitors.
Please refer to Figure 1B.After grid 105 and capacitance electrode 110 formed, a dielectric layer 115 was capped on grid 105 and capacitance electrode 110 tops.Then, an amorphous silicon (amorphous Si) layer is formed on the grid 105, and utilizes photoetching process to form a passage 120.
Please refer to Fig. 1 C.One second metal level then be formed at passage 120 and dielectric layer 115 on, and utilize photoetching process, second metal level is carried out the technology of patterning, drain 130 to form one source pole 125 with one.
Please refer to Fig. 1 D.Protective seam 135 then is formed on source electrode 125 and the drain electrode 130, and photoresist layer 140 is covered on the protective seam 135 more then.Then, by photoetching process, remove photoresist layer 140 partly.
Please refer to Fig. 1 E.Then, photoresist layer 140 carried out pyroprocessing after, allow the surface of part photoresist layer 140 form wavy.Then, form another photoresist layer 145 again on photoresist layer 140, and, form an interlayer hole 148, with the drain electrode 130 of expose portion by photoetching process.
Please refer to Fig. 1 F.At last, form one the 3rd metal level on photoresist layer 145, and utilize photoetching process, patterning the 3rd metal level is to obtain reflection layer 150.Reflection layer 150 sees through interlayer hole 148 and is electrically connected with drain electrode 130.
In the technology of the reflective TFT-LCD of above-mentioned prior art, form grid 105 and capacitance electrode 110, passage 120, source electrode 125 and drain electrode 130, photoresist layer 140, interlayer hole 148, during with reflection layer 150, each needs one mask, totally six road masks.The reliability of adding the display panels peripheral leads is considered (reliability), and needed mask then may be up to eight road masks.
If the Transflective TFT-LCD for prior art then must form an opening in addition on reflection layer 150, and coated with a transparency electrode.So, then more need one mask to finish again.Because the required mask count of the Transflective TFT-LCD of prior art is a lot, make that the production cost of Transflective TFT-LCD of prior art is too high.
Summary of the invention
In view of this, purpose of the present invention just provides a kind of Transflective LCD panel of thin-film transistor and manufacture method thereof, and purpose is that the technology number of mask can effectively be reduced to reduce cost.
According to above-mentioned purpose, the present invention proposes a kind of manufacture method of Transflective liquid crystal display panel of thin film transistor.Its step comprises: form first conductive layer in the substrate top; Patterning first conductive layer is to form grid; Cover a last dielectric layer; Form passage in the grid top; Form the photoresist block; Form second conductive layer; Patterning second conductive layer with formation source electrode and drain electrode above grid, and forms reflection layer above the photoresist block; Cover a last protective seam; The patterning protective seam, with formation first opening above drain electrode, the drain electrode of expose portion, and above reflection layer, form second opening, the reflection layer of expose portion; And, form transparency electrode, see through first opening and second opening, to be electrically connected drain electrode and reflection layer.
The present invention proposes a kind of Transflective liquid crystal display panel of thin film transistor in addition.This display panels has penetrating region and echo area.This display panels comprises: substrate; Thin film transistor (TFT) is formed on the substrate, and this thin film transistor (TFT) has drain electrode, grid and source electrode; Dielectric layer is in order to cover gate; The photoresist block is formed on the dielectric layer; Reflection layer, be formed at the photoresist block on, reflection layer is positioned at the echo area, and reflection layer with the drain electrode be electrically connected; And transparency electrode is formed within the penetrating region, and sees through transparency electrode, and this reflection layer is electrically connected with drain electrode.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. elaborate.
Description of drawings
Figure 1A to Fig. 1 F illustrates the manufacturing process of the reflecting type liquid crystal display panel of prior art.
Fig. 2 A to Fig. 2 F illustrates the manufacturing process of Transflective liquid crystal display panel of thin film transistor of the present invention.
Description of reference numerals
100,200: glass substrate
105,202: grid
110,204: capacitance electrode
115,206: dielectric layer
120,208: passage
125,215: source electrode
130,220: drain electrode
135,230: protective seam
140,145: the photoresist layer
148: interlayer hole
150,225: reflection layer
210: the photoresist block
230A: first opening
230B: second opening
235: transparency electrode
Embodiment
Main spirit of the present invention is, need not form the 3rd metal level, and can form a reflection layer simultaneously in second metal level.Because save the technology of the 3rd metal level,, thereby reduce manufacturing cost so the present invention can be so that required mask count reduces.
The manufacturing process of Transflective liquid crystal display panel of thin film transistor of the present invention is disclosed among the 2A～2F figure.At first, shown in Fig. 2 A, provide a glass substrate 200, and above glass substrate 200, form a first metal layer, and utilize this first metal layer of photoetching technique patterning, with the grid 202 of formation thin film transistor (TFT) and the capacitance electrode 204 of storage capacitors.
Then, shown in Fig. 2 B, after grid 202 and capacitance electrode 204 form, a dielectric layer 206 is covered in grid 202 and capacitance electrode 204 tops.Then, form an amorphous silicon layer, and utilize photoetching process to form a passage 208 on grid 202.
Then, shown in Fig. 2 C, form a photoresist layer, and utilize photoetching process, the photoresist layer is carried out Patternized technique, to obtain photoresist block 210.This photoresist block 210 is positioned at the top of capacitance electrode 204.Wherein, this photoresist layer can be positive photoresist and forms.
Then, shown in Fig. 2 D, form one second metal level on passage 208 and photoresist block 210, and utilize photoetching process, second metal level is carried out patterning,, and form a reflection layer 225 simultaneously in the top of photoresist block 210 with formation source electrode 215 and drain electrode 220.
Shown in Fig. 2 E, then, form protective seam 230, and, make protective seam 230 have one first opening 230A and one second opening 230B, with the drain electrode 220 and reflection layer 225 of exposed portion respectively by photoetching process.
At last, shown in Fig. 2 F, will be covered on the protective seam 230 by the transparency electrode 235 that tin indium oxide (ITO) formed, transparency electrode 235 is via the first opening 230A on the protective seam 230 and the second opening 230B, will drain 220 and reflection layer 225 be electrically connected.
Wherein, though present embodiment just in time is positioned at capacitance electrode 204 tops by photoresist block 210 is set, and reflection layer 225 also is formed at the position that corresponds to capacitance electrode 204 tops, so that TFT-LCD of the present invention can obtain the maximum open rate.Yet, of the present invention being not limited thereto.Reflection layer 225 also can be formed at other place except source electrode 215 and drain electrode 220.
Refer again to Fig. 2 F, have a penetrating region R1 and an echo area R2 via the formed Transflective TFT-LCD of manufacture method of the present invention.Grid 202, passage 208, source electrode 215 form a thin film transistor (TFT) 240 with drain electrode 220.Transparency electrode 235 forms within the penetrating region R1, and is electrically connected with drain electrode 220.Reflection layer 225 then is positioned at echo area R2's, and is electrically connected with drain electrode 220 through transparency electrode 235.
Characteristics of the present invention are, utilize second metal level, in source electrode 215 that forms thin film transistor (TFT) and drain electrode 220 o'clock, form reflection layer 225 simultaneously in the R2 of echo area.So, because do not need the 3rd metal level in the technology of prior art, so mask count required for the present invention also lacks than the practice of prior art, and technology of the present invention is simplified more than the practice of prior art.
Embodiments of the invention only need the technology of five road masks.In Transflective TFT-LCD technology of the present invention; only when forming grid 202 with capacitance electrode 204, passage 208, source electrode 215 drain electrodes 130 and reflection layer 225, photoresist block 210 and protective seam 230; each needs one mask, totally five road masks.Compare with the practice of prior art, the present invention can reach simplification technology really, the purpose that reduces cost.
Disclosed Transflective liquid crystal display panel of thin film transistor of the above embodiment of the present invention and manufacture method thereof can make required mask count reduce, and significantly reduce the cost of making.
Though the present invention by a preferred embodiment openly as above; yet it is not in order to qualification the present invention, those skilled in the art, without departing from the spirit and scope of the present invention; can do various adjustment and improvement, so protection scope of the present invention should be standard with claims.
Claims (12)
1. the manufacture method of a Transflective liquid crystal display panel of thin film transistor comprises:
Form one first conductive layer in substrate top;
This first conductive layer of patterning is to form a grid;
Cover a last dielectric layer;
Form a passage in this grid top;
Form a photoresist block;
Form one second conductive layer;
This second conductive layer of patterning drains to form one source pole and above this grid, and form a reflection layer above this photoresist block;
Cover a last protective seam;
This protective seam of patterning, with formation one first opening above this drain electrode, this drain electrode of expose portion, and above this reflection layer, form one second opening, this reflection layer of expose portion; And
Form a transparency electrode, see through this first opening and this second opening, to be electrically connected this drain electrode and this reflection layer.
2. manufacture method as claimed in claim 1 wherein, more forms a capacitance electrode in the step of this first conductive layer of patterning, this capacitance electrode is positioned at this photoresist block below.
3. manufacture method as claimed in claim 1, wherein this first conductive layer is a first metal layer.
4. manufacture method as claimed in claim 1, wherein this substrate is a glass substrate.
5. manufacture method as claimed in claim 1, wherein this photoresist block is made up of positive photoresist.
6. manufacture method as claimed in claim 1, wherein this second conductive layer is one second metal level.
7. manufacture method as claimed in claim 1, wherein this transparency electrode is made up of tin indium oxide (ITO).
8. the manufacture method of a Transflective liquid crystal display panel of thin film transistor, this display panels has a penetrating region and an echo area, and this method comprises:
Form a thin film transistor (TFT) and a capacitance electrode in substrate top, wherein, when an one source pole that forms this thin film transistor (TFT) and a drain electrode, form a reflection layer simultaneously in this echo area; And
Form a transparency electrode in this penetrating region.
9. manufacture method as claimed in claim 8, wherein this reflection layer is formed at the position corresponding to this capacitance electrode top.
10. manufacture method as claimed in claim 8 wherein, before forming this reflection layer, forms a photoresist block earlier in the top of this capacitance electrode.
11. a Transflective liquid crystal display panel of thin film transistor, this display panels have a penetrating region and an echo area, this display panels comprises:
One substrate;
One thin film transistor (TFT) is formed on this substrate, and this thin film transistor (TFT) has a drain electrode, a grid and one source pole;
One dielectric layer is in order to cover this grid;
One photoresist block is formed on this dielectric layer;
One reflection layer is formed on this photoresist block, and this reflection layer is positioned at this echo area; And
One transparency electrode is formed in this penetrating region, and by this transparency electrode, this reflection layer is electrically connected with this drain electrode.
12. display panels as claimed in claim 11, wherein, this panel has more a capacitance electrode, be formed on this substrate, and covered by this dielectric layer, and this photoresist block and this reflection layer is positioned at the top of this capacitance electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03103393 CN1241054C (en) | 2003-01-27 | 2003-01-27 | Half transmission and half reflection thin film transistor liquid crystal display panel and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03103393 CN1241054C (en) | 2003-01-27 | 2003-01-27 | Half transmission and half reflection thin film transistor liquid crystal display panel and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1521548A CN1521548A (en) | 2004-08-18 |
| CN1241054C true CN1241054C (en) | 2006-02-08 |
Family
ID=34282022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03103393 Expired - Fee Related CN1241054C (en) | 2003-01-27 | 2003-01-27 | Half transmission and half reflection thin film transistor liquid crystal display panel and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1241054C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101264688B1 (en) * | 2006-06-23 | 2013-05-16 | 엘지디스플레이 주식회사 | Apparatus And Method of Fabricating Thin Film Pattern |
| CN101383327B (en) * | 2007-09-05 | 2013-04-10 | 奇美电子股份有限公司 | LCD device, pixel array substrate, manufacturing of pixel array substrate |
-
2003
- 2003-01-27 CN CN 03103393 patent/CN1241054C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1521548A (en) | 2004-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1244011C (en) | Array base palte of liquid crystal display and mfg. thereof | |
| CN1320488C (en) | Liquid crystal display device built-in finger printing device and method of manufacturing the same | |
| CN1237384C (en) | Transmitting and reflecting liquid crystal device and manufacture thereof | |
| CN1932622A (en) | Transflective liquid crystal display device and method of fabricating the same | |
| CN100538999C (en) | Adopt the thin film transistor base plate and the manufacture method thereof of horizontal component of electric field | |
| CN1794078A (en) | Liquid crystal display device and fabricating method thereof | |
| CN1469174A (en) | Liquid crystal display device with colour filter array substrate and producing method thereof | |
| CN1992370A (en) | Organic thin film transistor and method for manufacturing the same | |
| CN1991465A (en) | Method of fabricating array substrate for in-plane switching liquid crystal display device | |
| CN100346217C (en) | Reflection type liquid crystal display device and method of manufacturing the same | |
| CN1752825A (en) | Liquid crystal display device using small molecule organic semiconductor material and method of fabricating the same | |
| CN100454560C (en) | Picture element structure and producing method thereof | |
| CN1794054A (en) | Liquid crystal display device and fabricating method thereof | |
| CN1797152A (en) | Liquid crystal display device and fabricating method thereof | |
| CN1278166C (en) | Manufacturing method of liquid crystal display device having concave shaped reflection layer | |
| CN1832149A (en) | Film transistor array substrate and its manufacturing method | |
| CN1154174C (en) | Manufacture of planar display | |
| CN1241054C (en) | Half transmission and half reflection thin film transistor liquid crystal display panel and manufacturing method thereof | |
| CN1256618C (en) | Liquid crystal display and its making process | |
| CN1641450A (en) | Liquid crystal display device, and its manufacturing method anbd transistor array substrate and manufacturing method | |
| CN1497298A (en) | Electro-optical device and electronic equipment | |
| CN1800927A (en) | Liquid crystal display panel and liquid crystal display device | |
| CN1117290C (en) | Display device | |
| CN101079428A (en) | Thin film transistor module base board and its making method | |
| CN1519618A (en) | Liquid crystal display with reflection being reduced |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060208 Termination date: 20180127 |