CN1234022C - Single-frequency single-angle transmitted total-angle high-reflection one-dimension photon crystal - Google Patents
Single-frequency single-angle transmitted total-angle high-reflection one-dimension photon crystal Download PDFInfo
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- CN1234022C CN1234022C CNB031143717A CN03114371A CN1234022C CN 1234022 C CN1234022 C CN 1234022C CN B031143717 A CNB031143717 A CN B031143717A CN 03114371 A CN03114371 A CN 03114371A CN 1234022 C CN1234022 C CN 1234022C
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- angle
- reflection
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- photon crystal
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- 239000013078 crystal Substances 0.000 title claims abstract description 20
- 239000012535 impurity Substances 0.000 claims abstract description 15
- 230000003287 optical effect Effects 0.000 claims abstract description 9
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 16
- 230000007547 defect Effects 0.000 abstract 2
- 239000010408 film Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 230000001154 acute effect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000004038 photonic crystal Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
The present invention relates to a single-frequency single-angle transmitted total-angle high-reflection one-dimension photon crystal which has two different impurity layers, and the defect states of the different impurity layers have the same frequency in the direction of a sharp angle, which is required to be highly transmitted. While in other directions, the frequencies of the defect states are completely different, namely that transmission is completely eliminated by using a forbidden band. The novel structure of the crystal and the novel properties of no spatial noise and controllable output direction and optical frequency have wide application prospects and can develop various novel optical devices.
Description
Technical field
The present invention relates to a kind of total-angle high-reflection one-dimension photon crystal of Single-frequency single-angle transmitted.
Background technology
The research of photonic crystal (PC) has become international important front edge research, and wherein one dimension (1-D) photonic crystal is relatively easily made, and can more early drop into application, so its progress is subjected to extensive concern.But, can not efficiently realize as photoemissive enhancing and inhibition, so influenced its application because 1-D photon crystal is not a complete band gap photon crystal.An important focus of 1-D photon crystal research in recent years is the total-angle high-reflection structure.The total-angle high-reflection structure be 1-D photon crystal be designed to outer incident light incident angle from 0 to high reflection occurring near 90 degree.This 1-D photon crystal is non-complete band gap in crystal, but can equivalence be complete band gap outside crystal.When impurity, then no matter whether total-angle high-reflection all has identical characteristic, promptly its impurity transmission peaks has different wavelength at different directions to the impurity transmission peaks.
Summary of the invention
The total-angle high-reflection one-dimension photon crystal that the purpose of this invention is to provide a kind of Single-frequency single-angle transmitted, this crystal can be at the light of the single wavelength of vertical direction single angle transmission, and other angle directions are the broadband total-angle high-reflection.
The structure of the total-angle high-reflection one-dimension photon crystal of Single-frequency single-angle transmitted of the present invention is a film system, and each rete is arranged as follows in the film system:
f?[(LH)
sD
L(HL)
s]g[(HL)
sD
H(LH)
s]
Wherein, f and g are that structure is regulated parameter, and H is a high refractive index layer, and L is a low-index film, the optical thickness of L and H be application band centre wavelength 1/4th; S is the periodicity of height refractive index cycle dielectric layer, D
LBe low-refraction impurity layer, D
HBe the high index of refraction impurity layer; Low-refraction impurity layer D
LMaterial usually identical with the L layer, special circumstances also can difference, D
LThickness can change according to the specific requirement of using.With α for a change parameter, then D
L=α L.Low-refraction impurity layer D
HMaterial usually identical with the H layer, special circumstances also can difference, D
HThickness can change according to the specific requirement of using.With β for a change parameter, then D
H=β L.L, H, α, β, f and g six parameters determine the spectral bandwidth of the total-angle high-reflection of this structure, the angular breadth of single angular direction transmission, the important indicators such as live width of single-frequency transmission jointly.
Its theoretical foundation and parameter are selected according to as follows:
Each is contained a D
LOr D
HSub-PC, α is different with β, i.e. D
LAnd D
HDifference, the sharp transmission peaks of its impurity in the total-angle high-reflection broadband is with difference.In the combined films system of two above-mentioned sub-PC, we can make the sharp transmission peaks of impurity of two sub-PC identical in the vertical incidence direction with g by regulating f, but in non-normal incidence direction difference.Wherein the selection of α and β is very important, and α or β change to 0 or change to 2 from 1 from 1, and the impurity transmission peaks of this sub-PC will become sharp.For obtaining sharp transmission peaks, α and β only rare is slightly smaller than 2 or near 0.The choosing value of α and β differently has different selections according to what the bandwidth of total-angle high-reflection band and symmetry required in addition.
The material of high refractive index layer H not only optical index height but also rete is must full impregnated bright at application band, as at infrared available Ge, Si, InP, GaAs etc., visible range TiO
2, ZnS etc.; Equally, the material of low-index film the L not only low but also rete of optical index is must full impregnated bright at application band, as SiO
2Or the like.
Method for making has multiple, for example uses high performance coating machine plated film, is the accurate control of impurity layer thickness with the main technique of coating machine plated film, and present high performance coating machine can be accomplished; Also useful molecules beam epitaxy or mocvd method growth, this method can make each bed thickness ideal structure accurately.
The spectral bandwidth of the total-angle high-reflection of the total-angle high-reflection one-dimension photon crystal of Single-frequency single-angle transmitted can cover very wide wave band, also can design as required according to request for utilization.The angular breadth of single angular direction transmission and the live width of single-frequency transmission also can design as required according to different request for utilizations, can design than the broadband, also can design sharper bands of a spectrum.
Description of drawings
Fig. 1 is the transmission of codope total-angle high-reflection one-dimension photon crystal and the graph of a relation of frequency spectrum and angle.
Among Fig. 1, reach 100% in theory in the transmissivity of acute angle direction and sharp frequency spectrum live width.
Embodiment
Embodiment
Each rete is arranged as follows in the total-angle high-reflection one-dimension photon crystal of Single-frequency single-angle transmitted:
f[(LH)
sD
L(HL)
s]g[(HL)
sD
H(LH)
s]
Material selection: H and D
HWith silicon (n
H=3.4), L and D
LWith silicon dioxide (n
L=1.45).
Wherein structural parameters are: s=7, f=1.1257368, g=0.93781965, α=1.6, and β=0.1.
The spectral bandwidth of total-angle high-reflection has covered from 0.87 ω
0To 1.2 ω
0Very wide frequency band, the live width of the angular breadth of single angular direction transmission and single-frequency transmission is seen shown in Figure 1, the transmissivity of this acute angle direction and sharp frequency spectrum live width reaches 100% in theory
Example application 1: communications applications
The spatial light filter.The light filter is a kind of important devices commonly used, and it only allows the light of wanting it to pass through pass through, and the light of not wanting it to pass through then is absorbed or reflects.Light filter at optical communication and various optical instrument with being indispensable.Wavelength light filter at present develops ripely, and kind is a lot, has absorbing material to make, and Thin Film Filter is also arranged.The spatial light filter is quite immature.Spatial light filter be can make one very the light of acute angle direction pass through, the light of other all directions must not enter.The past people usually live the light of other directions for sort this problem out with very long clarinet shelves, and develop two confocal lens afterwards and added aperture, but both not only benzene my but also weak effect.This structure is exactly very desirable spatial light filter.In free space optical communication or wireless atmosphere light transmittance, use the spatial light filter (this structure is undertaken spatial light filter and two kinds of effects of frequencies of light filter simultaneously) of this structure, not only effective but also microminiaturized, can make sensitivity and transmission range improve several magnitude.
Example application 2: Military Application
This structure will be to be used for anti-blinding and the very effective method of anti-misleading in the military affairs.
Blinding has two kinds, and the one, with light laser soldier's eyes are carried out blinding, the 2nd, the detector of military applications and weapon is carried out blinding, along with the reach of science, the anti-blinding of the detector of weapon is more and more important.Misleading is meant that the dry signal of disturbing lost efficacy guidance.It is very desirable that this structure is used in these back two kinds of situations.
It is light that military equipment requires, as be contained on the guided missile light more good more.This structure is that a film is that weight is counted in milligram.The detector of existing military equipment has been easy to by servo aligning guidance signal source, but all outside interferences outside the light and handy facility elimination guidance signal source are not arranged, this structure can be finished this mission very efficiently, only allow the signal in guidance signal source enter, any interference that does not allow other any frequencies and other any directions enters.
Claims (1)
1, a kind of total-angle high-reflection one-dimension photon crystal of Single-frequency single-angle transmitted, the structure that it is characterized in that this crystal are film systems, and each rete is arranged as follows in the film system:
f[(LH)
sD
L(HL)
s]g[(HL)
sD
H(LH)
s]
Wherein, f, g are that structure is regulated parameter, and H is a high refractive index layer, and L is a low-index film, the optical thickness of L and H be application band centre wavelength 1/4th; S is the periodicity of height refractive index cycle dielectric layer, D
LBe low-refraction impurity layer, D
HBe the high index of refraction impurity layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB031143717A CN1234022C (en) | 2003-05-06 | 2003-05-06 | Single-frequency single-angle transmitted total-angle high-reflection one-dimension photon crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB031143717A CN1234022C (en) | 2003-05-06 | 2003-05-06 | Single-frequency single-angle transmitted total-angle high-reflection one-dimension photon crystal |
Publications (2)
Publication Number | Publication Date |
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CN1450366A CN1450366A (en) | 2003-10-22 |
CN1234022C true CN1234022C (en) | 2005-12-28 |
Family
ID=28684122
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CNB031143717A Expired - Fee Related CN1234022C (en) | 2003-05-06 | 2003-05-06 | Single-frequency single-angle transmitted total-angle high-reflection one-dimension photon crystal |
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CN (1) | CN1234022C (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100365447C (en) * | 2004-08-17 | 2008-01-30 | 同济大学 | Three-channel filter with independently regulatable channel relative position and its regulating method |
CN100365448C (en) * | 2004-08-17 | 2008-01-30 | 同济大学 | Double channel filter with regulatable channel relative position and its regulating method |
CN102645695B (en) * | 2012-05-21 | 2014-11-05 | 河南科技大学 | Doped-layer-free photonic crystal optical fiber with filtering range of 430-630 nm and manufacturing method thereof |
CN102789054A (en) * | 2012-07-31 | 2012-11-21 | 江苏大学 | One-dimensional photonic crystal double-prism defect dispersion separator |
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2003
- 2003-05-06 CN CNB031143717A patent/CN1234022C/en not_active Expired - Fee Related
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Granted publication date: 20051228 Termination date: 20100506 |