CN1230716C - Mask-free nano pattern making method and equipment - Google Patents
Mask-free nano pattern making method and equipment Download PDFInfo
- Publication number
- CN1230716C CN1230716C CN 02153955 CN02153955A CN1230716C CN 1230716 C CN1230716 C CN 1230716C CN 02153955 CN02153955 CN 02153955 CN 02153955 A CN02153955 A CN 02153955A CN 1230716 C CN1230716 C CN 1230716C
- Authority
- CN
- China
- Prior art keywords
- atom
- laser
- nanometer
- metastable atom
- metastable state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention relates to a mask-free nanometer pattern making method and a making device thereof. The making device is composed of a vacuum chamber, a metastable state atom generator, a perforated ladle, a plate electrode, a light diaphragm, a laser beam, a flat reflector, a working table, etc. The light diaphragm with small holes is used for collimating a metastable state atom flow to form a parallel atom beam. A laser standing wave field enables the metastable state atom beam to form transverse spatial period distribution, and metastable state atoms can destroy a self-assembled monolayer adsorbed on the surface of a substrate when deposited. A wet etching technology is combined, and nanometer patterns of different materials can be fabricated. The present invention does not need a mask and an exposure system, which can save a large amount of equipment and instruments, and thus, cost is correspondingly cheap. The present invention can be widely used for the research and the development of nanometer pattern fabrication, nanometer materials, nanometer devices, etc.
Description
Technical field
The present invention relates to a kind of method for making and producing device thereof of nano graph, particularly a kind of maskless nano graph method for making and producing device thereof.
Background technology
The method for making of existing making nano graph and device thereof can be finished by exposure system, though the raising of exposure system resolving power can realize by the numerical aperture and the shortening exposure wavelength that increase lithographic objective, yet the reducing of wavelength will make depth of focus and field range dwindle rapidly with the further increase of numerical aperture, influence process factor, the advantage of high resolution can not be made full use of, be faced with and overcome the problem that the depth of focus shortening is brought, and the short more etching system of exposure wavelength, design and fabrication is difficult more, and cost is high more; Particularly when making, multiple highly sophisticated device need be used, and mask, cost height must be made.
Summary of the invention
Technology of the present invention is dealt with problems and is: overcome the deficiencies in the prior art, provide a kind of and can save large number quipments and instrument, do not need the maskless nano graph method for making and the producing device thereof of mask and exposure system.
Technical solution of the present invention is: a kind of maskless nano graph method for making, its characteristics are: comprise the following steps:
(1) produces metastable atom stream;
(2) metastable atom stream is injected in the vacuum workshop, utilize the plate electrode that is added with deflection voltage in the vacuum chamber to produce the deflecting electric field district, remove electronics and positive ion in the atomic current, and atomic current is collimated with narrow meshed diaphragm, the atom retaining that the angle of divergence is very big removes the atomic current that the remaining angle of divergence is very little;
(3) angle of divergence is very little metastable atom stream continues incident, and in the laser standing wave field that the overlay region of laser beam and reflection lasering beam forms, send out the laser quenching process, form horizontal period profile, metastable atom destroys SAM (self-composed monomolecular) film that is adsorbed on the silicon base surface;
(4) utilize wet etching technique on silicon base, to obtain the metal nano figure at last again.
Use said method nano graph producing device, its characteristics are: it comprises that the metastable atom generator reaches and its vacuum chamber that closely links to each other, be placed with plate electrode, diaphragm, laser beam, plane mirror, work stage in the vacuum chamber successively, the vertical directive plane mirror of laser beam.The metastable state gas atom is produced by the metastable atom generator and injects vacuum chamber by strainer, electronics in the atomic current and positive ion deflected by deflecting electric field (being produced by the plate electrode that is added with deflection voltage) time, obtain containing the metastable atom bundle of ground state atom, pass diaphragm and reduce beam divergence angle; Laser beam vertically is mapped on the plane mirror and forms the laser standing wave field vertical with the atomic current direction of propagation with the laser beam that reflects, the metastable atom bundle produces periodically in the lateral light stationary field, and Density Distribution is deposited in the substrate that is fixed on work stage, destroy the self-assembled monolayer that is adsorbed on substrate surface, can produce the figure of nanometer scale in conjunction with wet etching technique.
The present invention has following advantage than prior art:
(1) the present invention handles the metastable atom stream that the metastable atom generator sends by laser field, the density of atom is laterally forming period profile (with respect to the direction of propagation of atomic current), utilize metastable atom to destroy the SAM film that is adsorbed on substrate surface, can produce the metal construction of nanometer scale in conjunction with wet etching technique, this device does not need mask and exposure system, therefore save large number quipments and instrument, reduced the cost of making nano graph;
(2) the present invention utilizes laser field that atom is handled, the node of laser standing wave field is equivalent to " empty slit " concerning metastable atom, the size of slit can realize by power or the frequency that changes laser, the characteristic dimension of nano graph and this slit are closely related, so experimental implementation is very simple.
(3), do not resemble the influence that is subjected to electric charge electron beam, the ion beam because the metastable atom of utilization of the present invention is a neutral atom.Secondly, former wavelet is a matter wave, wavelength very short (＜0.01nm), diffraction effect is very little, can reach the characteristic dimension of atomic scale size in theory.The 3rd, as long as this device has been selected a kind of intert-gas atoms, the nanostructured that can be used for making different materials after the wavelength of laser instrument selected (identical to the corresponding wavelength of first excited state transition from metastable state with intert-gas atoms) is so the present invention can be used for the research and development of nano graph, nano material and nanoscale devices.
Description of drawings
Fig. 1 is the structural representation of nano graph producing device of the present invention;
Fig. 2 is the process chart that nano graph of the present invention is made.
Embodiment
As shown in Figure 1, nano graph producing device of the present invention is made of metastable atom generator 1, vacuum chamber 7, be positioned over vacuum workshop's 7 outer metastable atom generators 1 and closely link to each other, place plate electrode 4, diaphragm 5, laser beam 6, plane mirror 9 and work stage 8 in the vacuum workshop 7 successively with vacuum workshop 7.Laser beam 6 vertical directive plane mirrors 9, reflected light and incoming laser beam form laser standing wave field in the overlapping region.
The atomic current that metastable atom generator 1 sends is injected in the vacuum chamber 7 by strainer 2, pass the deflecting electric field district of two plate electrodes, 4 generations that are added with deflection voltage 3 earlier, remove wherein electronics 11 and positive ion 12, obtain containing the metastable atom bundle 10 of ground state atom (inoperative) to the SAM film, passing the narrow meshed diaphragm 5 atom retaining that the angle of divergence is very big again goes, the very little atomic current (can regard parallel atomic beam as) of the remaining angle of divergence moves on along rectilinear direction, enters the laser standing wave field (see figure 2) that reflected light and incoming laser beam form in the overlapping region.
The laser quenching process takes place in the metastable atom in Fig. 2 in laser standing wave field, the atom of hypo-intense region (near the node place) keeps original metastable state, the atom of high intensity region changes to ground state by metastable state, the node of laser standing wave field is equivalent to " empty slit " to metastable atom, the width of slit can be controlled by the power or the frequency that change laser, metastable atom density forms period profile in horizontal (with respect to the direction of propagation of atomic current), cycle just is half of wavelength, the metastable atom of period profile is deposited on surface adsorption to be had in the substrate of SAM film and destroys suprabasil SAM film (being similar to the exposure process in the photoetching technique), and the metal level in the destroyed zone of SAM film can remove with wet etching.
Etching solution composition: KOH (1mol/L), K
2S
2O
3(0.1mol/L), K
4Fe (CN)
6(0.001mol/L), the cycle of nanometer metal structure is half optical wavelength, if with two mutually perpendicular horizontal laser standing wave fields metastable atom stream is handled, can obtain the metal lattice structure.
The smooth finish surface of silicon base is coated with titanium (Ti), gold (Au) successively, after this two membranes is plated, is placed on dodecyl mercaptans (dodecanethiol CH
3(CH
2)
11SH (about 0.001mol/L) in ethanol) soak taking-up in about 24 hours in the solution, surface adsorption has the SAM film.The purpose of titanizing layer (2～3nm is thick) is in order to increase the adhesive when gold-plated, and this two membranes available electron beam evaporation technology is finished.
Claims (2)
1, a kind of maskless nano graph method for making is characterized in that: comprise the following steps:
(1) produces metastable atom stream;
(2) metastable atom stream is injected in the vacuum workshop, utilize the plate electrode that is added with deflection voltage in the vacuum chamber to produce the deflecting electric field district, remove electronics and positive ion in the atomic current, and atomic current is collimated with narrow meshed diaphragm, the atom retaining that the angle of divergence is very big removes the atomic current that the remaining angle of divergence is very little;
(3) angle of divergence is very little metastable atom stream continues incident, and in the laser standing wave field that the overlay region of laser beam and reflection lasering beam forms the laser quenching process takes place, form horizontal period profile, metastable atom destroys the self-assembled monolayer that is adsorbed on the silicon base surface;
(4) utilize wet etching technique on silicon base, to obtain the metal nano figure at last again.
2, use is according to the device of the described nano graph method for making of claim 1, it is characterized in that: it comprises that the metastable atom generator reaches and its vacuum chamber that closely links to each other, be placed with plate electrode, diaphragm, laser beam, plane mirror, work stage in the vacuum chamber successively, the vertical directive plane mirror of laser beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02153955 CN1230716C (en) | 2002-12-09 | 2002-12-09 | Mask-free nano pattern making method and equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02153955 CN1230716C (en) | 2002-12-09 | 2002-12-09 | Mask-free nano pattern making method and equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1506761A CN1506761A (en) | 2004-06-23 |
| CN1230716C true CN1230716C (en) | 2005-12-07 |
Family
ID=34235380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02153955 Expired - Fee Related CN1230716C (en) | 2002-12-09 | 2002-12-09 | Mask-free nano pattern making method and equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1230716C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108153109A (en) * | 2017-12-29 | 2018-06-12 | 深圳市华星光电技术有限公司 | The preparation method of photoetching agent pattern |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104388911B (en) * | 2014-10-15 | 2017-07-14 | 中国科学院宁波材料技术与工程研究所 | A kind of preparation method and applications of film |
| CN109188576A (en) * | 2018-08-14 | 2019-01-11 | 华东师范大学 | A method of the Ai Li light field based on surface phasmon prepares nano material |
-
2002
- 2002-12-09 CN CN 02153955 patent/CN1230716C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108153109A (en) * | 2017-12-29 | 2018-06-12 | 深圳市华星光电技术有限公司 | The preparation method of photoetching agent pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1506761A (en) | 2004-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5894058A (en) | Ultra-fine microfabrication method using a fast atomic energy beam | |
| Chen et al. | Interferometric lithography of sub‐micrometer sparse hole arrays for field‐emission display applications | |
| Molnár et al. | A combined top‐down/bottom‐up approach for the nanoscale patterning of spin‐crossover coordination polymers | |
| JP4536866B2 (en) | Nanostructure and manufacturing method thereof | |
| US6982174B2 (en) | Directed assembly of nanometer-scale molecular devices | |
| US8541066B2 (en) | Light-induced directed self-assembly of periodic sub-wavelength nanostructures | |
| JP5103415B2 (en) | High-order harmonic generator using laptop-size near-field amplification | |
| KR20090057113A (en) | Method of planarizing solid surface with gas cluster ion beam and solid surface planarizing apparatus | |
| CN1230716C (en) | Mask-free nano pattern making method and equipment | |
| CN101609176B (en) | Metal embedded fused quartz broadband reflection grating | |
| Yau et al. | Scanning tunneling microscope–laser fabrication of nanostructures | |
| CN100340875C (en) | Quartz transmission polarization beam splitting grating with 800 nanometer wave band | |
| CN1128247C (en) | Selective chemical plating process of preparing nanometer gap electrode | |
| CN110143566A (en) | A kind of preparation method of three-D micro-nano origami structure | |
| CN1553283A (en) | Metal mask plate | |
| RU151072U1 (en) | DEVICE FOR FORMING METAL NANOSIZED OBJECTS | |
| CN1315157C (en) | Preparation method of nano-gap electrode | |
| RU2302054C1 (en) | Method for producing spatial three-dimensional structure | |
| CN1607464A (en) | Method for fabricating high density nano structure using atomic photoetching technique | |
| Camposeo et al. | Atomic nanofabrication by laser manipulation of a neutral cesium beam | |
| Sow et al. | Micro-topiary-laser pruning of carbon nanotubes arrays fabrication of static and movable CNTs structures via laser trimming | |
| CN103092004A (en) | Holographic system for manufacturing three-dimensional closely-arrayed photonic crystal array structure | |
| Peuker et al. | High-resolution phase zone plates for water window wavelengths | |
| CN1264047C (en) | Optics device for making ultrafine pattern | |
| EP1789973A2 (en) | Particle optics and waveguide apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |