CN1224077A - Process for etching diamond film pattern with reactive ion beam - Google Patents
Process for etching diamond film pattern with reactive ion beam Download PDFInfo
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- CN1224077A CN1224077A CN 98122855 CN98122855A CN1224077A CN 1224077 A CN1224077 A CN 1224077A CN 98122855 CN98122855 CN 98122855 CN 98122855 A CN98122855 A CN 98122855A CN 1224077 A CN1224077 A CN 1224077A
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Abstract
A technology for etching pattern on diamond film with reactive ion beam features that said diamond film is grown on silicon wafer by hot wire method, the pattern for etching is on ion beam etching machine with Carfman-type ion source, pure oxygen reactive ion beam is used and aluminium film is used as mask formed by photoetching, corrosion and ion beam etching. Under partial oxygen pressure, the etching speeds for diamond and aluminium are very differnt. The etching selection ratio of diamond to aluminium can reach 40. The residual aluminium is removed by corrosion. Its advantages are simple process, good repeatability, and clear and straight lines.
Description
The present invention relates to a kind of Technology that adopts reactive ion beam etching technique to realize diamond film patternization, belong to the method for making solid state device.
The microelectromechanical systems of following the end of the eighties microelectronics to grow up is the inevitable outcome of development of modern scientific technology, is comprehensive new and high technology.It mainly is to adopt microelectronic process engineering to make the micromechanics of microelectronic device size, and micromechanics and microelectronic element are integrated into microelectromechanical systems.Because diamond has good electricity, optics and mechanical characteristic, and best strength/density ratio is arranged again, is widely used in the manufacturing of microelectronic device, senser element and micromechanical component.Yet the graphical of diamond thin is the difficult problem of manufacturing process always, seriously hindered the progress of diamond thin device.Tracing it to its cause, mainly is the resistance to chemical attack of the diamond utmost point, is difficult to find suitable mask material.People such as Dorsch disclose a kind of employing oxygen reactive ion etching and have carried out diamond film pattern technology [Diamond andRelated Materials, 1, (1992), 277], this technology must deposit one deck oxide compound in advance as mask material on diamond thin.Yet the graphical of oxide mask itself is exactly the problem that requires study.People such as Ramesham also disclose a kind of activated state atomic oxygen that adopts microwave to produce and have made diamond film pattern technology [Thin Solid Films, 304 (1997) 245].Though this technology has very high etch rate, has undercutting.In addition, application choice growth method growing diamond membrane forms required figure, the difficult quality guarantee of figure.In order to realize diamond film patternization, people such as Masaharu Edo have reported a kind of employing oxygen and nitrous oxide (N
2O) reactive ion beam etching (RIBE) is processed adamantine imaging technique with the aluminium film as mask.[Proceeding of the International Symposium onMicrosystems, Intelligent Materials and Robots, September 27-29,1995, Sendai, Japan P177-180] in this lithographic technique, adopted argon or oxygen, nitrous oxide and no filament ion beam source.The diamond etch rate be 163 dusts/minute, diamond is 24 to the etching selection ratio of aluminium.This is a kind of new reactive ion beam etching (RIBE) diamond technology, but its etch rate is slower, and the reactant gases in the etching will be used nitrous oxide.In order to overcome the deficiency of prior art, the present invention is modified into a kind of pure oxygen etching diamond film pattern with reactive ion beam technology.
The objective of the invention is, have on Kraft graceful (Kaufman) the type ion source ion beam etching machine, adopt the pure oxygen reactive ion beam, is mask with the aluminium film, carries out reactive ion beam etching (RIBE), thereby has realized diamond film patternization better.
Etching diamond film pattern with reactive ion beam metallization processes of the present invention is as follows:
A. first sputtering sedimentation (or hydatogenesis) aluminium film on diamond film surface, aluminium film thickness optionally the diamond thin of etching thickness and decide, be generally 1/20～1/10 of diamond thickness;
B forms required device photoresist material figure with conventional semiconductor technology photoetching on the surface of aluminium film;
C. be mask with the photoresist material figure, the aluminium erosion gone out and the corresponding figure of photoresist material with chemical corrosion method.But,, when having undercutting, then the aluminium film is etched and the corresponding to figure of photoresist material with ar-ion beam because of the isotropic etch of aluminium when pattern line is thinner;
D. place the ion beam etching machine to carry out the pure oxygen reactive ion beam etching (RIBE) in the sample that keeps photoresist material on the aluminium film, realize diamond film patternization.Need to prove,, then after the aluminium film patternization is carved into, uses the pure oxygen reactive ion beam etching (RIBE) instead and can realize diamond film patternization if the aluminium film adopts the realization of ar-ion beam etching patterned.
E. with remaining aluminium mask chemical corrosion method on the patterned diamond thin,, remove as with the dilute hydrochloric acid corrosion.
The processing condition of etching diamond film pattern with reactive ion beam of the present invention are: the ion source during etching aluminium film charges into 99.999% straight argon, and the Ar Pressure of working spaces is 1.3～2.7 * 10
-2Handkerchief, ion beam energy are 500 ev, and beam current density is 0.3～0.4 milliampere/centimetre
2, about 150～200 dusts of ionic fluid vertical incidence etch rate/minute.Ion source during the etching diamond film charges into 99.99% pure oxygen, and working spaces's oxygen presses 6.6 * 10
-3～5.4 * 10
-2Handkerchief.Oxygen ion beam energy 300～800 ev, 0.2～1.0 milliampere/centimetre of beam current density
2, about 160～400 dusts of vertical incidence etch rate/minute.As everyone knows, diamond is the minimum a kind of material of sputtering raste in the known elements, as adopting energy 500 ev, 0.35 milliampere/centimetre of beam current density
2Ar-ion beam vertical direction etching the time, etch rate less than 10 dusts/minute.Yet in lithographic method of the present invention, under the similarity condition etch rate up to 330 dusts/minute.Its reason is, during low energy oxygen ion beam bombardment diamond surface, carbon atom that can activated surface and be adsorbed on oxygen molecule on the carbon surface chemical reaction takes place become carbon monoxide and carbon dioxide, thereby accelerated adamantine erosion rate greatly.Then just the opposite for mask aluminium, during oxonium ion bombardment aluminium surface, activate the oxygen molecule generation chemical reaction of aluminium atom and surface adsorption thereof equally, generate non-volatile aluminum oxide.Yet the cohesion of aluminum oxide can be than aluminium height, thereby has seriously hindered the sputter etch rate of aluminium.Among the present invention, under above-mentioned identical pure oxygen etching condition, about 8 dusts of the etch rate of aluminium/minute, be with 1/20 of ar-ion beam etch rate.Therefore, when pure oxygen ion bundle etching diamond and aluminium, diamond film is to the etching selection ratio of aluminium film: R
Diamond/ R
Aluminium≈ 40, meet fully in the microelectron-mechanical technology that to adopt the aluminium film be mask, make the practical requirement of diamond film patternization.In addition, suitable oxygen partial pressure is the key factor that obtains higher diamond etch rate and big etching selection ratio is arranged in the reactive ion beam etching (RIBE) diamond surface figure of the present invention working spaces.Experimental result shows adamantine etch rate and the increase with oxygen partial pressure increases to the etching selection ratio of aluminium.Certainly, too high oxygen partial pressure will make the ion source unstable working condition, and ionogenic working life is shortened greatly, but to diamond sample surface spray oxygen, the partial oxygen partial pressure of sample surfaces was significantly increased, be unlikely again and too have a strong impact on ionogenic working order
The advantage of the inventive method is, adopt the pure oxygen etching diamond film pattern with reactive ion beam, make mask material with the aluminium film during etching, have realization diamond film patternization on the Kafman type ion source ion beam etching machine, the pattern line of etching is clear steep, the advantage that not only has reactive ion beam etching (RIBE), technology is simple, etching precision height, etching homogeneity and good reproducibility, characteristics such as no undercutting, and can with the microelectron-mechanical process compatible.
Description of drawings:
Fig. 1-the 4th, the process flow sheet of etching diamond film pattern with reactive ion beam of the present invention.Wherein, the 1st, photoresist material, the 2nd, aluminium mask, the 3rd, diamond thin, the 4th, polysilicon, the 5th, silicon substrate, the 6th, ar-ion beam, the 7th, oxygen ion beam
Fig. 5 is the diamond harmonic oscillator that the technology with oxygen etching diamond film pattern with reactive ion beam of the present invention is etched into.Wherein, the 8th, the interdigitated harmonic oscillator
Embodiment
Present embodiment adopts self-control ion beam etching machine to carry out the pure oxygen etching diamond film pattern with reactive ion beam, and ion source is a Kafman type, and equipment performance is ion beam energy 100～1500 ev, 0.05～1 milliampere/centimetre of ion beam flow density
2, 0～90 ° of ionic fluid input angle is continuous adjustable, and worktable is rotatable and by semiconductor freezer cold but.Diamond thin 3 among the embodiment is grown in by hot wire process on the sacrifice layer polysilicon 4 of silicon chip substrate 5, thick about 3 microns.Concrete steps are as follows:
A. on diamond thin 3, deposit the thick aluminium film 2 of 2000 dusts with sputtering method;
B. photoresist material 1 is coated on aluminium film 2 surfaces, and formed the photoresist material figure with the semiconductor technology photoetching;
C. the sample with technology b is positioned in the ion beam etching machine, etches on aluminium film 2 and the mask 2 of photoresist material 1 corresponding to figure as next step etching diamond film 3 with straight argon ionic fluid 6 earlier; Etching aluminium film 2 conditions are: ion source charges into 99.999% straight argon, working spaces's Ar Pressure 1.3～2.7 * 10
-2Handkerchief, ion beam energy 500 ev, 0.3～0.4 milliampere/centimetre of beam current density
2, ionic fluid vertical incidence etch rate 150～200 dusts/minute, etching time 30 minutes;
D. be mask pure oxygen reactive ion beam etching (RIBE) diamond thin 3 with aluminium film 2, ion source charges into 99.99% pure oxygen during etching diamond, and working spaces's oxygen presses 2.0～3.0 * 10
-2Handkerchief, oxygen ion beam 7 energy 500 ev, 0.35 milliampere/centimetre of beam current density
2, ionic fluid vertical incidence etch rate 330 dusts/minute, diamond is selected than being 30-40 the etch rate of aluminium, etching time 120 minutes, the sample after etching is finished with dilute hydrochloric acid with aluminium mask 2 erosion removals.Diamond harmonic oscillator 8 borders that are etched into are steep, no undercutting.Embodiment 2
In the present embodiment technology except that aluminium mask 2 usefulness chemical corrosion methods corrode become with photoresist material 1 corresponding to mask graph, other implementation method is with embodiment 1.
Claims (5)
1. process for etching diamond film pattern with reactive ion beam of the present invention, comprise diamond thin, Kraft graceful (Kaufman) type ion source ion beam etching machine, the aluminium mask process is characterized in that with the aluminium film being that the diamond film pattern etching technics of mask is as follows:
A. at the diamond film surface deposition of aluminum film, thickness is 1/20～1/10 of diamond thickness;
B. photoetching aluminium film, chemical corrosion or ar-ion beam etching aluminium film form and the corresponding to aluminium mask of photoresist material figure;
C. the sample that keeps photoresist material on the aluminium mask is placed to have Kafman type ion source ion etching machine, during etching, ion source charges into 99.99% pure oxygen, and working spaces's oxygen presses 6.6 * 10
-3～5.4 * 10
-2Handkerchief, oxygen ion beam energy 300～800 ev, 0.2～1.0 milliampere/centimetre of beam current density
2, adamantine etch rate 150～400 dusts of vertical incidence/minute, simultaneously the etch rate of vertical incidence aluminium mask be 8～16 dusts/minute, diamond is 16～40 to the etching selection ratio of aluminium;
D. remove remaining aluminium mask on the diamond thin with chemical corrosion.
2. process for etching diamond film pattern with reactive ion beam according to claim 1, when it is characterized in that ar-ion beam etching aluminium mask, ion source charges into 99.999% straight argon, the Ar Pressure 1.3～2.7 * 10 of working spaces
-2Handkerchief, ion beam energy 500 ev, 0.3～0.4 milliampere/centimetre of beam current density
2, ionic fluid vertical incidence aluminium etch rate 150～200 dusts/minute.
3. process for etching diamond film pattern with reactive ion beam according to claim 1 is characterized in that pure oxygen reactive ion beam etching (RIBE) diamond thin oxygen ion beam energy 500 ev, 0.35 milliampere/centimetre of beam current density
2, oxygen partial pressure is 2.0～3.0 * 10
-2Handkerchief, adamantine etch rate 330 dusts of vertical incidence/minute, diamond is 30-40 to the etching selection ratio of aluminium.
4. process for etching diamond film pattern with reactive ion beam according to claim 1 is characterized in that the etch rate selection that the diamond etch rate reaches aluminium in the pure oxygen etching diamond film pattern with reactive ion beam working spaces increases than the increase with oxygen partial pressure.
5. process for etching diamond film pattern with reactive ion beam according to claim 4 is characterized in that increasing the method for the local oxygen partial pressure of diamond film surface for spraying oxygen to diamond sample surface.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98122855A CN1075841C (en) | 1998-12-17 | 1998-12-17 | Process for etching diamond film pattern with reactive ion beam |
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| CN98122855A CN1075841C (en) | 1998-12-17 | 1998-12-17 | Process for etching diamond film pattern with reactive ion beam |
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| CN1224077A true CN1224077A (en) | 1999-07-28 |
| CN1075841C CN1075841C (en) | 2001-12-05 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100366583C (en) * | 2005-07-04 | 2008-02-06 | 中国科学院理化技术研究所 | Method for preparing diamond film surface metal patternization |
| CN102097362A (en) * | 2009-12-15 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | Method for forming mask layer and etching method |
| CN104651928A (en) * | 2015-01-17 | 2015-05-27 | 王宏兴 | Homogeneous epitaxial lateral growth method for diamond |
| CN106784044A (en) * | 2016-12-26 | 2017-05-31 | 哈尔滨工业大学 | A kind of three-dimensional structure diamond ultraviolet detector and preparation method thereof |
| CN108220915A (en) * | 2017-12-30 | 2018-06-29 | 天津大学 | A kind of micro- increase and decrease material composite manufacturing method of Graphics-oriented thin diamond film preparation |
| CN111279023A (en) * | 2017-08-30 | 2020-06-12 | 洛桑联邦理工学院 | Single crystal diamond diffraction optical element and method for manufacturing the same |
| CN114107943A (en) * | 2021-09-30 | 2022-03-01 | 宁波铭瑞中兴电子科技有限公司 | Conductivity sensor based on boron-doped diamond film and preparation method thereof |
| CN115637432A (en) * | 2022-09-30 | 2023-01-24 | 东莞赛诺高德蚀刻科技有限公司 | Method for manufacturing workpiece with pores and high-aspect-ratio grooves and metal workpiece |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6334927A (en) * | 1986-07-29 | 1988-02-15 | Matsushita Electric Ind Co Ltd | Working of diamond |
-
1998
- 1998-12-17 CN CN98122855A patent/CN1075841C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100366583C (en) * | 2005-07-04 | 2008-02-06 | 中国科学院理化技术研究所 | Method for preparing diamond film surface metal patternization |
| CN102097362A (en) * | 2009-12-15 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | Method for forming mask layer and etching method |
| CN104651928A (en) * | 2015-01-17 | 2015-05-27 | 王宏兴 | Homogeneous epitaxial lateral growth method for diamond |
| CN106784044A (en) * | 2016-12-26 | 2017-05-31 | 哈尔滨工业大学 | A kind of three-dimensional structure diamond ultraviolet detector and preparation method thereof |
| CN106784044B (en) * | 2016-12-26 | 2018-09-07 | 哈尔滨工业大学 | A kind of three-dimensional structure diamond ultraviolet detector and preparation method thereof |
| CN111279023A (en) * | 2017-08-30 | 2020-06-12 | 洛桑联邦理工学院 | Single crystal diamond diffraction optical element and method for manufacturing the same |
| CN108220915A (en) * | 2017-12-30 | 2018-06-29 | 天津大学 | A kind of micro- increase and decrease material composite manufacturing method of Graphics-oriented thin diamond film preparation |
| CN114107943A (en) * | 2021-09-30 | 2022-03-01 | 宁波铭瑞中兴电子科技有限公司 | Conductivity sensor based on boron-doped diamond film and preparation method thereof |
| CN115637432A (en) * | 2022-09-30 | 2023-01-24 | 东莞赛诺高德蚀刻科技有限公司 | Method for manufacturing workpiece with pores and high-aspect-ratio grooves and metal workpiece |
| CN115637432B (en) * | 2022-09-30 | 2023-08-22 | 东莞赛诺高德蚀刻科技有限公司 | Manufacturing method of workpiece with holes and high-aspect-ratio grooves and metal workpiece |
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| CN1075841C (en) | 2001-12-05 |
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