CN1223890C - Method for producing self-alignment pixel electrode of liquid crystal display device - Google Patents
Method for producing self-alignment pixel electrode of liquid crystal display device Download PDFInfo
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- CN1223890C CN1223890C CN 02128535 CN02128535A CN1223890C CN 1223890 C CN1223890 C CN 1223890C CN 02128535 CN02128535 CN 02128535 CN 02128535 A CN02128535 A CN 02128535A CN 1223890 C CN1223890 C CN 1223890C
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Abstract
The present invention relates to a method for producing self-alignment pixel electrodes of a liquid crystal displayer, which has the following steps: firstly, a plurality of adjacent pixel electrode zones are formed on a base plate of the liquid crystal displayer, and then, an interval filler is formed on a common side edge between every two adjacent pixel electrode zones which are connected, and the interval filler has an undercut profile; finally, a transparent conducting layer is shallowly plated by using the interval filler as a shielding object, and the self-alignment pixel electrodes are respectively formed on the surface of each pixel electrode zone.
Description
Technical field
The invention provides a kind of method for making of pixel electrode of LCD, the method for making of the autoregistration pixel electrode of a kind of Thin Film Transistor-LCD (TFT-LCD) especially is provided.
Background technology
Because LCD has that external form is frivolous, power consumption is few and characteristic such as radiationless pollution, so be widely used on the portable information products such as notebook computer, PDA(Personal Digital Assistant).
The method of making Thin Film Transistor-LCD (TFT-LCD) at present is to utilize colorful filter structure directly is made in (color filter on TFT, new technology COT) on the thin film transistor (TFT) mostly.In addition; thickness for the liquid crystal layer that will keep TFT-LCD; usually can in the panel of TFT-LCD, insert plastic bead (plastic bead) to spill cloth (spray) mode arbitrarily; beaded glass or glass fibre; in order to support the gap (cell gap) and the control gap size of liquid crystal layer; to obtain stable display quality; yet the plastic bead that these are inserted etc. may be positioned at the light penetrating region; or present uneven distribution; cause the situation of gathering to take place; and make light suffer scatterings such as plastic bead; the light that reduces TFT-LCD is to specific strength, or generation white point (white point) defective, has a strong impact on display quality and product fine rate.Therefore having developed at present utilizes the formed photoresistance column of photoetching process (photo spacer) to replace existing plastic bead etc., size and position with accurate control gap thing, and keep good gap length, promote picture quality, if the photoresistance column is placed light tight district, more can avoid the light leakage phenomena that is caused because of plastic bead etc.
Please refer to Fig. 1 to Fig. 3, Fig. 1 to Fig. 3 is the method synoptic diagram of existing making COT pattern TFT-LCD 10.As shown in Figure 1, at first on the lower glass substrate 12 of TFT-LCD 10, form multi-strip scanning line (scan line) and many and the orthogonal signal wire of each sweep trace (signalline) (all not being shown among Fig. 1).Wherein, each signal wire and each sweep trace are in a plurality of adjacent pixel electrodes of definition zone, lower glass substrate 12 surface 14, and each pixel electrode area 14 includes a TFT structure 16, and TFT structure 16 includes grid conducting layer on the polysilicon layer,, a gate dielectric, a channel layer, one source pole electrode and a drain electrode (all not being shown among Fig. 1) in addition.
Then on TFT structure 16, form a flatness layer 18, and on flatness layer 18, form the photic resist layer of a black (not being shown among Fig. 1), carry out a photoetching and etch process (PEP) then in the photic resist layer of black, to form a plurality of black lines (black matrix) layer 20.Wherein, each black lamina 20 corresponds respectively to the TFT structure 16 of its below, contrast in order to promote TFT-LCD 10, and then prevent that TFT structure 16 from producing light leakage currents, and it is bad to can be used to cover the oblique light leak that is produced when TFT-LCD 10 shows.On lower glass substrate 12, form a red filter layer (not being shown among Fig. 1) subsequently again, and carry out a photoetching process in red filter layer, to form a red filter array 22.Wherein, red filter layer is one to contain the photo anti-corrosion agent material layer of about 10% to 50% orchil of part by weight (dry weight), or a photosensitive resin (photosensitive resin) layer.Repeat above-mentioned steps afterwards, form a green filter array 24 and a blue filter array 26 in lower glass substrate 12 tops in regular turn, make that be positioned on the lower glass substrate 12 red filter array 22, green filter array 24 constitutes a R/G/B colorful filter structure with blue filter array 26.
On the R/G/B colorful filter structure, form a protective seam (overcoat layer) 28 then; on protective seam 28, form a photoresist layer (not being shown among Fig. 1) again; and carry out a photoetching and etch process, in protective seam 28, colorful filter structure 22,24,26 and black lamina 20, to form a contact hole (not being shown among Fig. 1).Then on lower glass substrate 12, deposit a low-impedance transparency conducting layer 30, (indium tin oxide ITO), makes transparency conducting layer 30 insert in the contact hole as tin indium oxide, form a contact plunger 32, in order to connect the drain electrode of transparency conducting layer 30 and TFT structure 16.Then carry out a photoetching and etch process again,, on transparency conducting layer 30, form an alignment films 34 afterwards again to remove partially transparent conductive layer 30.
As shown in Figure 2, on the top glass substrate 36 of TFT-LCD 10, form a transparency conducting layer 38 then, and on transparency conducting layer 38, form the thrust (protrusion) 40 that a plurality of thickness are about 3 microns (μ m).On thrust 40, form a plurality of thickness subsequently again and be about 5 microns gap filling material (spacer) 42, and carry out a spin coating (spin-coating) technology, on top glass substrate 36, to form an alignment films (orientation film) 44.Its intermediate gap filling material 42 is a light-sensitive polyimide (photosensitive polyimide, PI) material.
At last as shown in Figure 3, top glass substrate 36 and lower glass substrate 12 is staggered relatively, and between two glass substrates 12,36, inject a liquid crystal molecule 46, finish the making of existing TFT-LCD 10.Wherein, each thrust 40 of TFT-LCD 10 corresponds to the side of its each pixel electrode area 14 of below, and each gap filling material 42 corresponds to the intersection of each sweep trace and each signal wire.
Yet, existing method of making TFT-LCD 10, must carry out repeatedly photoetching and etch process, the thrust 40 and gap filling material 42 of black lamina 20, R/G/B colorful filter structure 22,24,26, transparency conducting layer 30 and the top glass substrate 36 of lower glass substrate 12 be could form respectively, processing step and production cost therefore increased significantly.In addition, in the technology of above-mentioned existing TFT-LCD 10, the black lamina 20 that corresponds to TFT structure 16 also regular meeting and causes light leakage phenomena because these photoetching repeatedly and the bit errors that etch process caused, and has a strong impact on the normal running of TFT-LCD 10.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of method for making of autoregistration pixel electrode of LCD, in order to simplify processing step and to reduce manufacturing cost.
Another object of the present invention is to provide a kind of Thin Film Transistor-LCD, and the gap filling material that is positioned between two glass substrates has the function of black lamina simultaneously.
The preferred embodiments of the present invention disclose a kind of LCD (liquid crystal display, the method for making of autoregistration pixel electrode LCD).This LCD is made on the substrate, this substrate includes multi-strip scanning line (scan line) and many and the orthogonal signal wire of this sweep trace (signal line) respectively, and respectively this signal wire defines a plurality of adjacent pixel electrodes zone with this sweep trace respectively in this substrate surface.At first on this substrate, form a sensitization (photosensitive) material layer, then remove respectively this interior photosensitive material layer of this pixel electrode area, so that this photosensitive material layer of part residues in respectively on this sweep trace and this signal wire respectively, be used for being used as a gap filling material (spacer), and the upper surface area of this gap filling material is greater than the lower surface area of this gap filling material, forms a transparency conducting layer at last again in this substrate top to cover this gap filling material and this pixel electrode area respectively.Wherein, this transparency conducting layer that is covered on this pixel electrode area is respectively separated by this gap filling material, to form an autoregistration pixel electrode.
The present invention also provides a kind of method for making of autoregistration pixel electrode of LCD, this LCD is made on the substrate, this substrate includes a plurality of adjacent pixel electrodes zone, and respectively this pixel electrode area be adjacent connect respectively have a shared side between this pixel electrode area, this method for making includes the following step: form a black lamina on this substrate; Removing part should black lamina, so that this residual black lamina is positioned on this shared side of this pixel electrode area respectively, and this residual black lamina includes a undercut profile; And form a transparency conducting layer in this substrate top, and this transparency conducting layer that is covered on this pixel electrode area is respectively separated by this residual black lamina, to form an autoregistration pixel electrode.
Because autoregistration pixel electrode method for making of the present invention is to utilize one to have undercut profile and be positioned at each sweep trace and the photosensitive material layer of each signal wire top, the gap filling material of being used as this TFT-LCD, therefore when follow-up on this lower glass substrate during this transparency conducting layer of formation, just can be by this gap filling material, this transparency conducting layer district of this pixel electrode area top is separated and incite somebody to action respectively.The method for making of autoregistration pixel electrode of the present invention not only can be simplified technology, reduces cost, and more can effectively solve because of photoetching repeatedly and contraposition that etch process produced problem accurately not.
Description of drawings
Fig. 1 to Fig. 3 is the existing method synoptic diagram of making COT type TFT-LCD;
Fig. 4 is the part top view of TFT-LCD of the present invention;
Fig. 5 to Fig. 7 is the method synoptic diagram of Fig. 4 along the making TFT-LCD of the present invention of tangent line I-I '; And
Fig. 8 is the part top view of the TFT-LCD of another embodiment of the present invention.
Description of reference numerals in the accompanying drawing is as follows:
10 TFT-LCD, 12 lower glass substrate
14 pixel electrode area, 16 TFT structures
18 flatness layers, 20 black laminas
22 red filter array 24 green filter arrays
26 blue filter array 28 protective seams
30 transparency conducting layers, 32 contact plungers
34 alignment films, 36 top glass substrate
38 transparency conducting layers, 40 thrusts
42 gap filling materials, 44 alignment films
46 liquid crystal molecules, 50 TFT-LCD
52 lower glass substrate, 54 pixel electrode area
56 TFT structure 56A drain electrodes
58 flatness layers, 60 black laminas
62 Red lightscreening plates, 64 green color filters
66 blue color filters, 68 protective seams
70 photosensitive material layers, 72 gap filling materials
74 thrusts, 76 transparency conducting layers
78 contact plungers, 80 transparency conducting layers
82 alignment films, 84 top glass substrate
86 liquid crystal molecules
Embodiment
In an embodiment of the present invention, with a COT pattern and low-temperature polysilicon film transistor (low temperature polysilicon thin film transistor with last grid (top gate) structure, LTPSTFT) LCD (LCD) as an illustration, but application of the present invention is not limited thereto, any type of LCD all is applicable to the method for making of autoregistration pixel electrode of the present invention.
Please refer to Fig. 4 to 7, Fig. 4 is the part top view of TFT-LCD 50 of the present invention, and Fig. 5 to Fig. 7 is the method synoptic diagram of Fig. 4 along the making of tangent line I-I ' TFT-LCD 50 of the present invention.Extremely shown in Figure 5 as Fig. 4, the method for making of the autoregistration pixel electrode of TFT-LCD 50 of the present invention is that a lower glass substrate 52 is provided earlier, and lower glass substrate 52 includes multi-strip scanning line and many and the orthogonal signal wire of each sweep trace (all not being shown among Fig. 4 and Fig. 5).Wherein, each signal wire and each sweep trace are in a plurality of adjacent pixel electrodes of definition zone, lower glass substrate 52 surface 54, and each pixel electrode area 54 is equipped with a TFT structure 56, and it includes grid conducting layer on the polysilicon layer,, a gate dielectric, a channel layer, one source pole electrode and a drain electrode 56A.
Then on TFT structure 56, form a flatness layer 58, and on flatness layer 58, form a plurality of black laminas 60 that correspond respectively to TFT structure 56.On lower glass substrate 52, form a R/G/B colorful filter structure 62,64,66 subsequently; on R/G/B colorful filter structure 62,64,66, form a protective seam 68 more in regular turn, and a thickness is about sensitization (photosensitive) material layer 70 between 3 to 4 microns.
As shown in Figure 6, utilize a light shield (not being shown among Fig. 6), carry out a photoetching and developing process, be positioned at photosensitive material layer 70 on each pixel electrode area 54 with removal, and residual photosensitive material layer 72 is positioned on each sweep trace and each signal wire, as shown in Figure 4.Wherein, residual photosensitive material layer 72 is the gap filling materials that are used for being used as TFT-LCD 50, and gap filling material 72 has a undercut profile (undercut profile), that is by the parameter control of exposure energy, time shutter etc. in this developing process, make the upper surface area of gap filling material 72 greater than its lower surface area, a for example about slightly trapezoidal shape.In addition, inject liquid crystal molecule for convenience of follow-up between two glass substrates of TFT-LCD 50, optionally other forms a thrust 74 on the gap filling material 72 of the intersection of each signal wire and each sweep trace, as shown in Figure 4.Then in protective seam 68, R/G/B colorful filter structure 62,64,66, black lamina 60 and flatness layer 58, form a contact hole (not being shown among Fig. 6); on lower glass substrate 52, form deposition one transparency conducting layer 76 again; as tin indium oxide (indium tinoxide; ITO); to form an autoregistration pixel electrode; and make transparency conducting layer 76 insert in the contact hole, form a contact plunger 78, in order to connect the drain electrode 56A of transparency conducting layer 76 and TFT structure 56.Wherein, it should be noted that, because gap filling material 72 has the plated film characteristic of a undercut profile and ITO transparency conducting layer 76, therefore the transparency conducting layer 76 that is covered on each pixel electrode area 54 will be separated by gap filling material 72 automatically, makes that transparency conducting layer 76 is a discontinuous transparency conducting layer 76.
Then as shown in Figure 7, it is staggered relatively with lower glass substrate 52 with the top glass substrate 84 of alignment films 82 to include a transparency conducting layer 80 with one, and in two glass substrates 52,84 with between injection one liquid crystal molecule 86, finish the making of TFT-LCD 50 of the present invention.In the preferred embodiments of the present invention, gap filling material 72 is photosensitive material and the top that is positioned at each signal wire and each sweep trace, yet the present invention is not limited to this, gap filling material 72 also can be a black resin material, therefore can be used as the black lamina of TFT-LCD 50, and be present in the top of TFT structure 56, as shown in Figure 8, be used for covering TFT structure 56, avoid producing light leakage phenomena.
In brief, the method for making of autoregistration pixel electrode of the present invention be utilize one have undercut profile and be positioned at each sweep trace and each signal wire on photosensitive material layer be used as the gap filling material of TFT-LCD, therefore not only can keep good gap length, and when follow-up when on lower glass substrate, forming transparency conducting layer, also do not need extra photoetching and etch process, just can separate out by the transparency conducting layer of gap filling material with each pixel electrode area top.So the method for making of autoregistration pixel electrode of the present invention not only can be simplified technology, reduces cost, more can effectively solve because of photoetching repeatedly and contraposition that etch process produced problem accurately not.
Compared with prior art, autoregistration pixel electrode of the present invention does not need to carry out photoetching and etch process to remove the partially transparent conductive layer, only utilize the transparency conducting layer that can separate each pixel electrode area top once gap filling material with undercut profile, not only save processing step, save cost, and gap of the present invention filling material also has the function of black lamina, can effectively reach light and cover effect, improve TFT-LCD to specific strength, obtain better display quality.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claims of the present invention change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (20)
1. the method for making of the autoregistration pixel electrode of a LCD, this LCD is made on the substrate, this substrate includes multi-strip scanning line and many and the orthogonal signal wire of this sweep trace respectively, and respectively this signal wire defines a plurality of adjacent pixel electrodes zone with this sweep trace respectively in this substrate surface, and this method for making includes the following step:
On this substrate, form a photosensitive material layer;
Remove respectively this interior photosensitive material layer of this pixel electrode area, so that this photosensitive material layer of part residues in respectively on this sweep trace and this signal wire respectively, be used for being used as a gap filling material, and the upper surface area of this gap filling material is greater than the lower surface area of this gap filling material; And
Form a transparency conducting layer in this substrate top covering this gap filling material and this pixel electrode area respectively,
This transparency conducting layer that wherein is covered on this pixel electrode area is respectively separated by this gap filling material, to form an autoregistration pixel electrode.
2. method for making as claimed in claim 1, wherein this LCD is a low-temperature polysilicon film transistor LCD.
3. method for making as claimed in claim 1, this substrate include a red/green/blue color filters structure in addition and are arranged in respectively this pixel electrode area.
4. method for making as claimed in claim 3, wherein this LCD is the LCD that colorful filter structure directly is made in pattern on the thin film transistor (TFT).
5. method for making as claimed in claim 4 wherein before forming this transparency conducting layer, can form a contact hole in/green/blue color filters structure red in this.
6. method for making as claimed in claim 5, wherein when this substrate top formed this transparency conducting layer, this transparency conducting layer can be inserted among this contact hole.
7. method for making as claimed in claim 1, wherein this substrate is a transparent glass substrate.
8. method for making as claimed in claim 1, wherein the section of this gap filling material is a trapezoidal shape.
9. method for making as claimed in claim 1, this gap filling material that wherein is positioned at this signal wire respectively and this sweep trace top respectively is as a black lamina.
10. method for making as claimed in claim 1, wherein the thickness of this gap filling material is about between 3 to 4 microns.
11. method for making as claimed in claim 1, wherein this transparency conducting layer is made of tin indium oxide.
12. method for making as claimed in claim 1 forms a protective seam on wherein can be prior to this substrate before forming this photosensitive material layer on this substrate.
13. the method for making of the autoregistration pixel electrode of a LCD, this LCD is made on the substrate, this substrate includes a plurality of adjacent pixel electrodes zone, and respectively this pixel electrode area be adjacent connect respectively have a shared side between this pixel electrode area, this method for making includes the following step:
On this substrate, form a black lamina;
Removing part should black lamina, so that this residual black lamina is positioned on this shared side of this pixel electrode area respectively, and this residual black lamina includes a undercut profile; And
Form a transparency conducting layer in this substrate top, and this transparency conducting layer that is covered on this pixel electrode area is respectively separated by this residual black lamina, to form an autoregistration pixel electrode.
14. method for making as claimed in claim 13, wherein the upper surface area of this residual black lamina is greater than the lower surface area of this residual black lamina.
15. method for making as claimed in claim 13, wherein the section of this residual black lamina is a trapezoidal shape.
16. method for making as claimed in claim 13, wherein this LCD includes the multi-strip scanning line and many signal line are located on this substrate in addition, and this residual black lamina is positioned at respectively this signal wire or the respectively top of this sweep trace.
17. method for making as claimed in claim 13 wherein is positioned at this signal wire respectively and is used as a gap filling material with this residual black lamina of this sweep trace top respectively.
18. method for making as claimed in claim 13, the thickness that wherein should deceive lamina is about between 3 to 4 microns.
19. method for making as claimed in claim 13, wherein this transparency conducting layer is made of tin indium oxide.
20. method for making as claimed in claim 13 wherein forms a protective seam in forming on this substrate on can be prior to this substrate before should black lamina.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 02128535 CN1223890C (en) | 2002-08-09 | 2002-08-09 | Method for producing self-alignment pixel electrode of liquid crystal display device |
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| CN 02128535 CN1223890C (en) | 2002-08-09 | 2002-08-09 | Method for producing self-alignment pixel electrode of liquid crystal display device |
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| CN1474217A CN1474217A (en) | 2004-02-11 |
| CN1223890C true CN1223890C (en) | 2005-10-19 |
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| CN 02128535 Expired - Fee Related CN1223890C (en) | 2002-08-09 | 2002-08-09 | Method for producing self-alignment pixel electrode of liquid crystal display device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101825823A (en) * | 2010-04-21 | 2010-09-08 | 友达光电股份有限公司 | Pixel structure and alignment mark |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100403478C (en) * | 2006-01-13 | 2008-07-16 | 四川世纪双虹显示器件有限公司 | Plasma display screen barrier wall slurry |
| KR101448668B1 (en) * | 2007-07-05 | 2014-10-08 | 삼성디스플레이 주식회사 | Display substrate, method of manufacturing the same and display apparatus having the same |
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2002
- 2002-08-09 CN CN 02128535 patent/CN1223890C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101825823A (en) * | 2010-04-21 | 2010-09-08 | 友达光电股份有限公司 | Pixel structure and alignment mark |
| CN101825823B (en) * | 2010-04-21 | 2012-01-25 | 友达光电股份有限公司 | Pixel structure and active component array substrate |
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| Publication number | Publication date |
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| CN1474217A (en) | 2004-02-11 |
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