CN1223467A - Method for quantitating impurity concentration and recording medium storing record of program for quantitating inpurity concentration - Google Patents
Method for quantitating impurity concentration and recording medium storing record of program for quantitating inpurity concentration Download PDFInfo
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- CN1223467A CN1223467A CN 98124931 CN98124931A CN1223467A CN 1223467 A CN1223467 A CN 1223467A CN 98124931 CN98124931 CN 98124931 CN 98124931 A CN98124931 A CN 98124931A CN 1223467 A CN1223467 A CN 1223467A
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Abstract
Measurement of pulse CV characteristics and an SIMS measurement of a semiconductor substrate are made at the same position. An SIMS profile is calibrated by a method of least squares so that a dose amount determined from the SIMS profile coincide with a dose amount determined from the concentration profile of a carrier. In the case where plural impurities are introduced, a measurement of pulse CV and SIMS measurement are made and the distribution of impurity concentration and the distribution of carrier concentration are estimated by simulation every time when an impurity is introduced. When an impurity is introduced in a high concentration, an impurity of the inverse conductive-type to that of the former impurity is introduced.
Description
The present invention relates to a kind of be used for the measuring method of semiconductor and so on device impurity concentration and the recording medium of storage impurity concentration process of measurement, specifically, the recording medium that relates to a kind of impurity concentration method of measurement that can carry out high-acruracy survey and storage impurity concentration process of measurement.
Near measurement semiconductor and so on device surface,, 70 several different methods had been proposed along aspect the Impurity Distribution of depth direction.In these methods, SIMS (secondary ion mass spectrometry (SIMS) determination method) is widely adopted, because it can be with kind and the content information of significant sensitivity acquisition along the depth direction trace element.The detailed introduction of SIMS method can be referring to document " SOLID SURFACE ANALYSIS I, pp.196-257, published by KODANSHA, 1995 ".Point out that in passing the SIMS method is a kind of analytical method of damaging sample.
In the impurity concentration that adopts the SIMS method is analyzed, in sample, add leading ion, so that the secondary ion that the quantitative analysis sample sends.Owing to this reason, though in sample impurity be inertia and situation that its impurity concentration is very high under, except can analyzing interface, can also analyze its inside with higher sensitivity such as samples such as semiconductor chips.The SIMS method has the unrivaled remarkable advantage of other method of measurement.
The general non-destructive analysis method that adopts comprises at present, utilize for example RBS (the rutherford's back reflection method) method of energy dispersive, perhaps based on the method for pulse CV measurement, the fundamental measurement principle of this method is the variation that utilizes as the depletion layer of endemism in the semiconductor.At semiconductor applications, as the non-destructive analysis method, the method for measuring carrier concentration profile by the pulse CV measurement is often adopted owing to its simplicity especially.
For example, by calculating the method for the carrier concentration profile of measuring based on pulse CV, can measure the carrier concentration profile that draws according to pulse CV characteristics, this method see document " E.H.NICOLLIAN and J.R.BREWS; MOS Phisics and Technology; pp.371-422, JOHN WILEY ﹠amp; SONS, Inc., 1982 ".
Because pulse CV is measured as non-destroyed measurement, so can carry out repeatedly easily.Thereby, measuring fluctuation even exist in the measurement mechanism, also can be eliminated by statistical analysis technique.
Yet, in the impurity concentration that adopts the SIMS method to carry out is measured, must produce secondary ion, because its complexity and polytropy make this process not purify.Therefore, have only experimental technology to be adopted by reality.Especially, adopting maximum usually is the technology of utilizing standard sample.Yet in these methods, the computational methods of the quality of according to standard sample, RSF (the relative sensitivity factor) and the variation of day error etc. can produce the error of tens percentages.In addition, the SIMS method is a kind of destructive method of analysis, therefore can not eliminate the influence of RSF fluctuation by the statistical analysis technique that repeats repeatedly to measure, thereby can not proofread and correct impurity concentration.
On the other hand, in the method for calculating the carrier concentration profile of measuring based on pulse CV, the distribution of calculating carrier concentration according to the variation of its width of depletion region when sample applies voltage.Therefore, when having plurality of impurities, can only measure the charge carrier total amount that influences by all these impurity.
When introducing the impurity of high concentration, the distribution of measuring the carrier concentration that is obtained according to pulse CV narrows down, this feasible whole distribution map that can not obtain the impurity of introducing.And, be under the situation of inertia at impurity, because inert impurities does not influence electrical characteristic, so between impurity concentration and carrier concentration, do not have consistency.Therefore, need a kind of method that can carry out the simple high accuracy measurement of concetration that extensively adopts.
As previously mentioned, in the measurement of adopting the SIMS method, if there is not standard sample, just can not the accurate impurity concentration of quantitative measurment.Its reason is as follows.Specifically, the value that is directly obtained by the SIMS method is the amount of ions of time per unit.Yet, do not purify owing to produce the process of this ion, so need adopt empirical method especially, for example utilize calibration curve and adopt the method for standard sample.Even under the situation that adopts standard sample, the day error of relative sensitivity function R SF is also very big, thereby there is the measurement fluctuation.In addition, because the SIMS method is a kind of destructive method of analysis, the fluctuation of its measurement result can not be eliminated by statistical method, and this makes and is difficult to measure quantitatively impurity.
Correspondingly, measure impurity concentration, need a kind of standard sample that is designed to have definite impurities concentration distribution for utilizing the SIMS method.Yet, be not the standard sample that can obtain can be used for critical component.Even exist under the situation of standard sample, measure the variation that fluctuation also can cause the impurity concentration of surveying.And, because the SIMS method is a kind of destructive method of analysis, is difficult to eliminate fluctuation, thereby produces following problem by statistical method, promptly measure accurate impurity concentration with can not determine.
Calculate in the method for carrier concentration profile at the distribution map of measuring gained according to pulse CV, when there is plurality of impurities in measured zone, impurity is inertia, when perhaps impurity concentration is very high, and the accurate impurity concentration in energy measurement wide region zone not.
This is owing to following reason.Specifically, when the distribution of carrier concentration is calculated in measurement according to pulse CV, utilized the variation of its width of depletion region when applying voltage.In order to make impurities concentration distribution consistent with carrier concentration profile, must make to be identical with contrast impurity as the impurity of charge carrier, and should contrast impurity the corresponding a kind of material of situation therewith just.And all impurity that exist in the system must be active.The impurity of introducing high concentration can limit the scope of the certainty of measurement of guaranteeing carrier concentration profile.For example, the measuring range of measuring the carrier concentration profile of gained based on pulse CV is limited in narrower zone.Consequently, can not obtain the carrier concentration profile of desired depth.
Therefore, if when needs adopt the pulse CV measurement to measure carrier concentration profile, introduced plurality of impurities, then be difficult to the concentration of the various impurity of independent measurement.When having introduced the impurity of high concentration, can only measure the carrier concentration profile of near interface.In addition, be under the situation of inertia at impurity, the distribution of carrier concentration and the distribution of impurity concentration are inconsistent.
The object of the present invention is to provide a kind of method and a kind of recording medium that stores the impurity concentration process of measurement that is used to measure impurity concentration, the method is characterized in that it has the advantage of SIMS method and pulse CV measurement, can obtain the Impurity Distribution by its electrical characteristic reflection of the wide region degree of depth.The advantage of SIMS method is that for example, but depth measurement degree scope is very wide, corresponding to the situation of introducing plurality of impurities, and can measure the concentration of inert impurities.The advantage of pulse CV method of measurement is, for example can obtain absolute value of carrier concentration or the like.
The method that the present invention is used to measure impurity concentration comprises a step of measuring the pulse CV characteristics of semiconductor chip.Then, calculate the carrier concentration profile of this semiconductor chip by its pulse CV characteristics along depth direction.Then, the SIMS that carries out semiconductor device at the same position place of measuring pulse CV characteristics measures, to calculate the SIMS distribution map of impurity.In the depth bounds of guaranteeing the carrier concentration precision, with least square method this SIMS distribution map is proofreaied and correct, make that a dosage that obtains is consistent with a dosage that obtains from carrier concentration in the SIMS distribution map.
In the present invention, the correction of SIMS distribution map has utilized the carrier concentration profile that measured value calculated according to pulse CV characteristics.This makes can accurately measure impurity concentration in wide depth bounds.
In addition, when introducing impurity, can carry out following operation sequence at every turn, comprise that SIMS measures, measure pulse CV characteristics, utilize the last time measurement result to simulate, estimated value and actual value are compared in the distribution of estimation impurity concentration and carrier concentration, and the dosage of throwing that calculates impurity.In the case, even introduce plurality of impurities, also can accurately measure impurity concentration quantitatively.
In addition, after introducing first impurity of first kind of conductivity type, can introduce second impurity as second kind of conductivity type of the transoid of this first kind of conductivity type.In the case, even introduce first impurity, also can obtain the distribution map of wide region by the measurement of described pulse CV characteristics with high concentration.
Fig. 1 is the flow chart of key step in the expression various embodiments of the present invention;
The curve chart of Fig. 2 for concerning between the expression sample degree of depth and the carrier concentration;
The curve chart of Fig. 3 for concerning between the expression sample degree of depth and the impurity concentration;
Fig. 4 is the curve chart of the SIMS distribution map of expression geometric ratio amplification;
Fig. 5 is the flow chart of expression according to the impurity concentration method of measurement of first embodiment of the invention;
Fig. 6 A and 6B are the flow chart corresponding to the impurity concentration method of measurement of second embodiment of the invention; And
Fig. 7 is the flow chart of expression according to the impurity concentration method of measurement of third embodiment of the invention;
Describe impurity concentration method of measurement with reference to the accompanying drawings in detail according to first embodiment of the invention.Fig. 1 is the flow chart of key step in the expression various embodiments of the present invention.In various embodiments of the present invention, carry out pulse CV measurement and SIMS at the same position place of same sample and measure (step S401).
At this moment, in pulse CV is measured, calculate the distribution map of carrier concentration by adopting the location mode of for example reversing.The curve chart of Fig. 2 for concerning between the expression sample degree of depth and the carrier concentration, wherein ordinate is represented the sample degree of depth, abscissa is represented carrier concentration.In pulse CV is measured, obtain curve chart as shown in Figure 2.Yet the scope that can guarantee its precision is only between the flex point in Fig. 2.
In SIMS measures, measure at the same position place of the same sample of carrying out described pulse CV measurement, to calculate the distribution map of impurity concentration.The curve chart of Fig. 3 for concerning between the expression sample degree of depth and the carrier concentration, wherein ordinate is represented the sample degree of depth, abscissa is represented carrier concentration.In SIMS measures, obtain curve chart as shown in Figure 3.
Next, in the depth bounds of guaranteeing the carrier concentration precision, with least square method conversion relative sensitivity function R SF, make the dosage that obtains in the carrier concentration that in step S401, calculates consistent, and geometric ratio is amplified the SIMS distribution map (step S402) at each degree of depth place with a dosage that also is the impurity concentration that in 401, calculates.The SIMS distribution map that Fig. 4 graphical representation geometric ratio is amplified, wherein ordinate is represented the sample degree of depth, abscissa is represented carrier concentration.The geometric ratio of SIMS distribution map is amplified the feasible impurities concentration distribution by the electrical characteristic reflection that can obtain based on the pulse CV measurement, as shown in Figure 4.
The following describes the first embodiment of the present invention.Fig. 5 is the flow chart of expression corresponding to the impurity concentration method of measurement of first embodiment of the invention.
In first embodiment, at first on the surface of substrate, form uniform single oxide-film (step S101).Measure the thickness of this oxide-film then.
Then, introduce impurity (step 102) by for example ion injection or solid-state diffusion method to substrate.At this moment, the impurity of introducing by methods such as ion injections is inertia.
Then, by in blanket of nitrogen or similar atmosphere, carrying out the impurity activation (step S103) that annealing in process makes all introducings.
After this, deposit one conductive layer on its oxide-film, aluminium lamination for example, it will be as electrode (step S104) when measuring to carry out pulse CV in the back.
Next, utilize this conductive layer as its pulse CV characteristics of electrode measurement (step S105).
According to the pulse CV characteristics of pulse CV measurement gained, calculate the scope of depletion region, calculate carrier concentration profile (step S106) thus along depth direction.
In next step, peel off for example aluminium lamination (step S107) of described conductive layer as electrode.
Next, carrying out SIMS measurement (step S108) as the same position place that carries out the pulse CV measurement.Step S105 to step S108 corresponding to the step S401 shown in Fig. 1.
Then, in the depth bounds of guaranteeing the carrier concentration precision, calculate conversion factor with least square method, make that a dose value of the impurities concentration distribution that calculates is consistent with a dose value of the carrier concentration profile that calculates in step S108, thereby proofread and correct the impurity concentration of measuring based on SIMS (step S109) in step S106.Step S109 is corresponding to step S402 shown in Fig. 1 and S403.
Then, its impurity concentration is used as standard sample at this sample that step S101 obtains to the step S109 to proofread and correct, and measures (step S110) with the SIMS that carries out other sample impurity concentration.
In the case, as the mercury prover, the pulse CV measurement mechanism is established electrode in itself being furnished with, thereby can save step S104 and S107.
In this embodiment, introduce impurity (step S102) as previously mentioned.Yet, in the sample of introducing active impurity,, also can measure its impurity concentration in above-mentioned series of steps if sample is only handled to step S105 successively.This embodiment can be used to proofread and correct the situation of commercially available standard sample successively.
The following describes the second embodiment of the present invention.This embodiment is preferably used in the situation of introducing plurality of impurities.Usually, when introducing plurality of impurities, be difficult to analyze the distribution of its carrier concentration by common pulse CV measurement.In first embodiment, the impurity concentration method of measurement of desirable sample has been described.Yet, measure because the pulse CV measurement result of standard sample is used to reflect the impurity concentration of other sample, so must compensate the defective that its pulse CV is measured in general.Fig. 6 A and 6B are the flow chart corresponding to the impurity concentration method of measurement of second embodiment of the invention.
In this embodiment, at first when making common unit, make additional substrate (step S201) with the quantity identical with the dopant species of in making the step that obtains the required device of impurities concentration distribution, introducing.Need point out, on these additional substrate, not form any figure line, and these additional substrate in the back step with separated.
Then, in each substrate, introduce impurity (step S202).
Then, isolate an additional substrate (step S203).
In next step, judge on the surface of institute's separate substrates, whether to be formed with oxide-film (step S204).
If there is not oxide-film to form, then form oxide-film (step S205) on the surface of institute's separate substrates, judge then whether the impurity in institute's separate substrates is (the step S206) of inertia.On the other hand, if form oxide-film, judge that then whether impurity in this substrate be inertia, and need not form oxide-film (step S206).
Impurity in institute's separate substrates is under the situation of inertia, make all impurity activations (step S207) in this substrate by in blanket of nitrogen, carrying out annealing in process or similar processing, adopt the pulse CV measurement mechanism of establishing electrode in having then, for example the mercury prover is measured its pulse CV characteristics (step S208).On the other hand, when impurity in the substrate is activity, measure its pulse CV characteristics, and need not activated impurity (step S208).
Then,, calculate the scope of depletion layer, calculate carrier concentration profile (step S209) thus along depth direction according to the pulse CV characteristics of institute's separate substrates.
Then, carry out SIMS at the same position place that carries out the pulse CV measurement and measure (step S210).Step S208 to S210 is corresponding to the step S401 shown in Fig. 1.
Then, determine to introduce the number (step S211) of impurity.
When impurity is when introducing for the first time, in the depth bounds of guaranteeing the carrier concentration precision, proofread and correct the impurity concentration of measuring based on SIMS with least square method, make that a dose value of the impurities concentration distribution that obtains in step S210 is consistent with a dose value of the carrier concentration profile that obtains in step S209, its mode is with first embodiment (step S212).Step S212 is corresponding to the step S402 among Fig. 1.The distribution map of this correction is confirmed as primary data, and all steps before next time introducing impurity are impurities concentration distribution and the carrier concentration profile (step S215) of simulation estimate before next time introducing impurity.
On the other hand, if impurity is not to introduce for the first time, carrier concentration profile before so impurity being introduced, when being distributed in last time introducing impurity, this is estimated according to the sunykatuib analysis of step S215, make comparisons with the carrier concentration profile that this impurity introducing back calculates in step S209, thrown dosage (step S213) to calculate.Next step proofreaies and correct the impurity concentration that this SIMS distributes, make this SIMS that in step S210, calculates distribute with on once the difference that distributes of SIMS and in step S213, calculate the dosage of throwing consistent (step S214).Then, with the first time impurity introduce same mode, estimate the impurity concentration before impurity is introduced next time and the distribution (step S215) of carrier concentration.
After above-mentioned steps, judge whether to introduce all impurity (step S216).
If introduce all impurity, then finish the separation of substrate and the analysis of Impurity Distribution.On the other hand, if do not introduce all impurity as yet, then in each substrate, introduce a kind of impurity (step S202) down.Repeating step S202 to S216 then is until all impurity of whole introducings.
These steps guarantee to obtain the Impurity Distribution by the electrical characteristic reflection, shown in step S403 among Fig. 1.
The following describes the third embodiment of the present invention.This embodiment preferentially is used for the impurity concentration condition with higher of introducing.In this embodiment, the impurity of all introducings all will be activated.In general, when the concentration of introducing impurity is higher,, is difficult to proofread and correct SIMS and distributes according to the carrier concentration profile that is calculated by the pulse CV measurement result.Fig. 7 is the flow chart of expression according to the impurity concentration method of measurement of third embodiment of the invention.
In this embodiment, when making common unit, added the additional substrate (step S301) that is separated in the step in the back and does not form any figure line on it.
Then, in each substrate, introduce first kind of conductivity type first impurity A (step S302) of high concentration.
Then, isolate an additional substrate (step S303).
In the substrate that is separated, introduce second impurity B (step S304) of second kind of conductivity type.This second kind of transoid that conductivity type is first kind of conductivity type.
Then, judge on institute's separate substrates, whether to have formed oxide-film (step S305).
Under the situation that forms oxide-film, in blanket of nitrogen, make all impurity As and B in this substrate activate (step S306) by annealing or similar processing.Adopt the pulse CV measurement mechanism of establishing electrode in having then, for example the mercury prover is measured its pulse CV characteristics (step S308).
On the other hand,, then form oxide-film, and make all impurity As and B activation, its mode identical with the situation that forms oxide-film (step S307) if still do not form oxide-film.Measure its pulse CV characteristics (step S308) then.
Then,, calculate the scope of depletion layer, calculate carrier concentration profile (step S309) thus along depth direction according to the pulse CV characteristics of institute's separate substrates.
Then, carry out SIMS at the same position place that carries out the pulse CV measurement and measure (step S310).Step S308 to S310 is corresponding to the step S401 shown in Fig. 1.
Then, estimate the distribution (step S311) of carrier concentration based on the SIMS distribution map that produces.
Then, in guaranteeing the accurate depth bounds of described carrier concentration, proofread and correct the impurities concentration distribution figure that measures based on SIMS with least square method, make the dosage consistent (step S312) of dosage that obtains and the carrier concentration profile that in step S309, obtains in the impurities concentration distribution of in step S311, estimating.Step S312 is corresponding to the step S402 among Fig. 1.
These steps guarantee to obtain the Impurity Distribution by the electrical characteristic reflection, shown in step S403 among Fig. 1.
In this embodiment, introduced the impurity B opposite at step S304 with the impurity A conductivity type.Therefore, even impurity A is dense, also can proofread and correct its impurity concentration exactly.
Subsidiary pointing out in these embodiments, by adopting the recording medium that stores above-mentioned steps on it, and adopts computer to carry out the impurity concentration process of measurement that is stored in the recording medium, also can measure impurity concentration.
Claims (16)
1. a method of measuring impurity concentration comprises the steps:
In semiconductor chip, introduce a kind of impurity;
Activate this impurity;
Measure the pulse CV characteristics of this semiconductor chip;
Calculate the carrier concentration profile of described semiconductor chip according to this pulse CV characteristics along depth direction;
The SIMS that carries out this semiconductor chip at the same position place of measuring described pulse CV characteristics measures, and distributes with the SIMS that calculates described impurity;
In guaranteeing the accurate depth bounds of described carrier concentration, the SIMS distribution map is proofreaied and correct with least square method, make that a dosage that obtains in the dosage obtain and the carrier concentration profile is consistent from described SIMS distribution map; And
This semiconductor chip is measured as the SIMS that standard sample carries out other sample.
2. impurity concentration method of measurement as claimed in claim 1 wherein, before the step of described introducing impurity, also is included in the step that forms oxide-film on the described semiconductor chip.
3. impurity concentration method of measurement as claimed in claim 2, wherein, also being included in the step that forms electrode on the described oxide-film before the step of described measurement pulse CV characteristics, after the step of described calculating carrier concentration profile, also comprise the step of removing described electrode.
4. impurity concentration method of measurement as claimed in claim 3, wherein, the step of described measurement pulse CV characteristics is to utilize the reverse side of described semiconductor chip and described electrode to carry out the measurement of pulse CV characteristics.
5. a method of measuring impurity concentration comprises the steps:
A kind of impurity is introduced in a plurality of semiconductor chips;
In the described a plurality of semiconductor chips of another kind of impurity introducing except that a semiconductor chip;
Repeat will be also other impurity introduce described semi-conductive step, do not comprise the semiconductor chip of introducing the number of steps equal number with front impurity in the wherein said semiconductor;
When each introducing impurity, measure the pulse CV characteristics of one of described semiconductor chip;
Calculate the carrier concentration profile of described semiconductor chip according to this pulse CV characteristics along depth direction;
The SIMS that carries out this semiconductor chip at the same position place of measuring described pulse CV characteristics measures, and distributes with the SIMS that calculates described impurity;
Introducing when described impurity is when introducing for the first time, in guaranteeing the accurate depth bounds of described carrier concentration, the SIMS distribution map is proofreaied and correct with least square method, made that a dosage that obtains in the dosage obtain and the carrier concentration profile is consistent from the SIMS distribution map;
Each step is simulated, introduced impurity until next time, to estimate that impurity is introduced preceding carrier concentration profile next time;
Introducing when described impurity is not when introducing for the first time, with last time impurity introduce the carrier concentration profile actual value that the carrier concentration profile that finishes the back estimation and this impurity introduces after the end and compared;
Calculate the dosage of this impurity of introducing according to described comparative result;
Proofread and correct described SIMS with least square method and distribute, make its dosage of throwing consistent with the dosage that this calculates; And
Each step is simulated, introduced impurity until next time, to estimate that impurity is introduced preceding carrier concentration profile next time.
6. impurity concentration method of measurement as claimed in claim 5 wherein, after the step of described introducing impurity, also is included in the step that forms oxide-film on the described semiconductor chip.
7. impurity concentration method of measurement as claimed in claim 5 wherein, after the step of described introducing impurity, also comprises the step that makes described impurity activation.
8. a method of measuring impurity concentration comprises the steps:
In one first semiconductor chip and one second semiconductor chip, introduce first impurity of first kind of conductivity type;
Introduce second impurity of second kind of conductivity type in described first semiconductor chip, second kind of conductivity type is the transoid of described first kind of conductivity type;
Measure the pulse CV characteristics of described first semiconductor chip;
Calculate the carrier concentration profile of described first semiconductor chip according to this pulse CV characteristics along depth direction;
The SIMS that carries out this first semiconductor chip at the same position place of measuring described pulse CV characteristics measures, and distributes with the SIMS that calculates described first and second impurity;
SIMS according to described first and second impurity distributes, and estimates the carrier concentration profile of described first semiconductor chip along depth direction; And
In guaranteeing the accurate depth bounds of described carrier concentration, proofread and correct described SIMS with least square method and distribute, make that a dosage of this carrier concentration profile of being obtained by described pulse CV characteristics is consistent with a dosage that obtains from the carrier concentration profile of being estimated.
9. impurity concentration method of measurement as claimed in claim 8 wherein, after the step of described introducing second impurity, also is included in the step that forms oxide-film on described first semiconductor chip.
10. impurity concentration method of measurement as claimed in claim 8 wherein, after the step of described introducing second impurity, also comprises the step that makes described first and second impurity activations.
11. a method of measuring impurity concentration comprises the steps:
Measure the pulse CV characteristics of a semiconductor chip;
Calculate the carrier concentration profile of described semiconductor chip according to this pulse CV characteristics along depth direction;
The SIMS that carries out this semiconductor chip at the same position place of measuring described pulse CV characteristics measures, and distributes with the SIMS that calculates impurity; And
In guaranteeing the accurate depth bounds of described carrier concentration, the SIMS distribution map is proofreaied and correct with least square method, make that a dosage that obtains is consistent with a dosage that obtains from described carrier concentration profile from the SIMS distribution map.
12. a method of measuring impurity concentration comprises the steps:
Measure the pulse CV characteristics of a semiconductor chip;
Calculate the carrier concentration profile of described semiconductor chip according to this pulse CV characteristics along depth direction;
The SIMS that carries out this semiconductor chip at the same position place of measuring described pulse CV characteristics measures, and distributes with the SIMS that calculates impurity;
In guaranteeing the accurate depth bounds of described carrier concentration, the SIMS distribution map is proofreaied and correct with least square method, make that a dosage that obtains in the dosage obtain and the carrier concentration profile is consistent from the SIMS distribution map;
Each step is simulated, introduced impurity until next time, to estimate that impurity is introduced preceding carrier concentration profile next time;
In described semiconductor chip, introduce impurity;
With last time impurity introduce to finish the carrier concentration profile actual value that the carrier concentration profile estimated the back and this impurity introduces after the end and compared;
Calculate the dosage of this impurity of introducing according to described comparative result;
Proofread and correct described SIMS and distribute, make its dosage of throwing consistent with the dosage that this calculates; And
Each step is simulated, introduced impurity until next time, to estimate that impurity is introduced preceding carrier concentration profile next time.
13. a method of measuring impurity concentration comprises the steps:
On a substrate surface, form uniform oxide-film;
In described substrate, introduce unique impurity as object to be measured;
This impurity is all activated;
Deposit one electrode material to be forming electrode on described substrate, thereby makes the MOS structure;
By reverse side and the described electrode that utilizes this substrate, measure the pulse CV characteristics of this substrate;
Calculate the carrier concentration profile of described substrate according to this pulse CV characteristics along depth direction;
Peel off described electrode;
The SIMS that carries out described substrate at the same position place of measuring described pulse CV characteristics measures;
Feasible SIMS by this SIMS measurement gained distributes consistent with described carrier concentration profile, thus the impurity concentration of calibration standard sample; And
Measure by described substrate is carried out SIMS as standard sample to the need Measuring Object, this standard sample is used for next time and subsequent SIMS measures.
14. a method of measuring impurity concentration comprises the steps:
When program begins, add the substrate that does not form any figure line on it with the number identical with the impurity indegree, make and can isolate a substrate when introducing impurity at every turn;
When introducing impurity, isolate a substrate that is selected from described all additional substrate at every turn;
When not having oxide-film on the described separate substrates, on this separate substrates, form oxide-film;
When described impurity is inertia, make the impurity activation in the described separate substrates;
Establish the pulse CV measurement mechanism of electrode in having by employing, described separate substrates is carried out pulse CV measure;
Calculate carrier concentration profile according to this pulse CV characteristics;
Carrying out SIMS at the same position place of measuring described pulse CV characteristics measures;
Introducing when described impurity is when introducing for the first time, proofreaies and correct the impurity concentration of being measured gained by described SIMS, makes that this impurity concentration is consistent with the carrier concentration profile that is calculated;
Each step is simulated, introduced impurity until next time, with the estimation carrier concentration profile;
The carrier concentration profile of being estimated before impurity introduced is compared with the actual value that this impurity is introduced the described carrier concentration profile after finishing, to calculate the dosage of this introducing impurity after impurity is introduced for the second time;
Determine impurity concentration, make by the dosage of described SIMS measurement gained distribution consistent with the dosage that this calculates; And
Each step is simulated, introduced impurity until next time, with the estimation Impurity Distribution.
15. a method of measuring impurity concentration comprises the steps:
Prepare a substrate, do not form any figure line on it, make and after introducing a kind of first impurity end, can carry out the separation of substrate;
After introducing described first impurity, separate this substrate;
Introduce a kind of second impurity in described separate substrates, this second impurity is the transoid of described first impurity;
When not having oxide-film on the described substrate of introducing second impurity, form oxide-film thereon;
When described first and second impurity are inertia, make first and second impurity activations in the described separate substrates;
Establish the pulse CV measurement mechanism of electrode in having by employing, measure the pulse CV characteristics of described separate substrates;
Calculate carrier concentration profile according to this pulse CV characteristics;
At the same position place of measuring described pulse CV characteristics the ion of described first impurity and second impurity being carried out SIMS measures;
It is in addition comprehensive that the SIMS of described first and second impurity is distributed, with the carrier concentration profile of estimation along depth direction; And
In guaranteeing the accurate scope of described carrier concentration, determine the impurity concentration of SIMS with least square method, make the dosage that obtains by described carrier concentration profile with measure the dosage that the carrier concentration estimation distribution that estimated obtains according to described SIMS consistent.
16. a recording medium that is used to store the impurity concentration process of measurement wherein records the program as the arbitrary described impurity concentration method of measurement of claim 1 to 15.
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1998
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100388450C (en) * | 2002-11-07 | 2008-05-14 | 株式会社半导体能源研究所 | Evaluation method of semiconductor device, its mfg. method and design management system |
| CN109473369A (en) * | 2018-10-29 | 2019-03-15 | 西安微电子技术研究所 | A kind of method of doping concentration in monitoring high temperature furnace pipe |
| CN112505135A (en) * | 2020-12-15 | 2021-03-16 | 天津中环领先材料技术有限公司 | Method for testing boron element content of silicon-based product with oxide film |
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