CN1219324C - Non-volatile semiconductor memory and method - Google Patents
Non-volatile semiconductor memory and method Download PDFInfo
- Publication number
- CN1219324C CN1219324C CNB021543887A CN02154388A CN1219324C CN 1219324 C CN1219324 C CN 1219324C CN B021543887 A CNB021543887 A CN B021543887A CN 02154388 A CN02154388 A CN 02154388A CN 1219324 C CN1219324 C CN 1219324C
- Authority
- CN
- China
- Prior art keywords
- electrode
- gate transistor
- memory cell
- semiconductor memory
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
Description
SG1 | SG2 | D | S | CG | |
Read | 3V | 3V | 1V | 0 | 4V |
Write | 4V | 0 | 1/4V | 0 | 20V |
Wipe | 0 | 0 | 0 | 0 | -20V |
Read | Write | Wipe | |
SG1 | 3V | 4V | 0 |
SG2 | 3V | 0 | 0 |
D1 | 1V | 0 | Suspend |
D2 | 0 | 4V | Suspend |
CG1 | 4V | 20V | -20V |
CG2 | 0 | 0 | 0 |
S | 0 | 0 | 0 |
Read | Write | Wipe | |
SG1a | 3V | 6V | 0 |
SG1b | 0 | 6V→0V | 0 |
SG2 | 3V | 0 | 0 |
D1 | 1V | 4V→0 | Suspend |
D2 | 1V | 4V→4V | Suspend |
CG1 | 4V | 6V→20V | -20V |
CG2 | 0 | 6V | 0 |
S | 0 | 0 | 0 |
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-375993 | 2001-12-10 | ||
JP2001375993A JP4027656B2 (en) | 2001-12-10 | 2001-12-10 | Nonvolatile semiconductor memory device and operation method thereof |
JP2001375993 | 2001-12-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1426114A CN1426114A (en) | 2003-06-25 |
CN1219324C true CN1219324C (en) | 2005-09-14 |
Family
ID=35063086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021543887A Expired - Lifetime CN1219324C (en) | 2001-12-10 | 2002-12-04 | Non-volatile semiconductor memory and method |
Country Status (5)
Country | Link |
---|---|
US (2) | US6952031B2 (en) |
JP (1) | JP4027656B2 (en) |
KR (1) | KR100501063B1 (en) |
CN (1) | CN1219324C (en) |
TW (1) | TW578301B (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3998467B2 (en) * | 2001-12-17 | 2007-10-24 | シャープ株式会社 | Nonvolatile semiconductor memory device and operation method thereof |
DE10321742A1 (en) * | 2003-05-14 | 2004-12-09 | Infineon Technologies Ag | Integrated circuit arrangement with isolation trench and field effect transistor as well as manufacturing process |
US7119393B1 (en) * | 2003-07-28 | 2006-10-10 | Actel Corporation | Transistor having fully-depleted junctions to reduce capacitance and increase radiation immunity in an integrated circuit |
JP2005101174A (en) * | 2003-09-24 | 2005-04-14 | Hitachi Ltd | Non-volatile semiconductor storage device and method for manufacturing the same |
JP2006032489A (en) * | 2004-07-13 | 2006-02-02 | Nec Electronics Corp | Nonvolatile semiconductor storage device and its manufacturing method |
TWI270199B (en) * | 2005-01-31 | 2007-01-01 | Powerchip Semiconductor Corp | Non-volatile memory and manufacturing method and operating method thereof |
JP2007115773A (en) * | 2005-10-18 | 2007-05-10 | Nec Electronics Corp | Semiconductor memory device and method of manufacturing same |
KR100742284B1 (en) * | 2006-02-09 | 2007-07-24 | 삼성전자주식회사 | Nonvolatile memory device and method of forming the same |
KR100919433B1 (en) * | 2006-06-29 | 2009-09-29 | 삼성전자주식회사 | Non volatile memory device and method for fabricating the same |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
JP5572953B2 (en) * | 2009-01-15 | 2014-08-20 | 凸版印刷株式会社 | Nonvolatile semiconductor memory cell and nonvolatile semiconductor memory device |
US10141327B2 (en) | 2016-03-18 | 2018-11-27 | Toshiba Memory Corporation | Semiconductor memory device |
CN109473432A (en) * | 2018-10-31 | 2019-03-15 | 上海华力微电子有限公司 | Improve the process of flash data holding capacity |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4267632A (en) * | 1979-10-19 | 1981-05-19 | Intel Corporation | Process for fabricating a high density electrically programmable memory array |
JP4330670B2 (en) * | 1997-06-06 | 2009-09-16 | 株式会社東芝 | Nonvolatile semiconductor memory device |
US6151248A (en) * | 1999-06-30 | 2000-11-21 | Sandisk Corporation | Dual floating gate EEPROM cell array with steering gates shared by adjacent cells |
JP4117998B2 (en) | 2000-03-30 | 2008-07-16 | シャープ株式会社 | Nonvolatile semiconductor memory device, reading, writing and erasing methods thereof, and manufacturing method thereof |
JP4087108B2 (en) * | 2001-12-10 | 2008-05-21 | シャープ株式会社 | Nonvolatile semiconductor memory device and manufacturing method thereof |
JP3998467B2 (en) * | 2001-12-17 | 2007-10-24 | シャープ株式会社 | Nonvolatile semiconductor memory device and operation method thereof |
-
2001
- 2001-12-10 JP JP2001375993A patent/JP4027656B2/en not_active Expired - Fee Related
-
2002
- 2002-12-04 CN CNB021543887A patent/CN1219324C/en not_active Expired - Lifetime
- 2002-12-06 KR KR10-2002-0077362A patent/KR100501063B1/en active IP Right Grant
- 2002-12-06 TW TW091135468A patent/TW578301B/en not_active IP Right Cessation
- 2002-12-09 US US10/314,021 patent/US6952031B2/en not_active Expired - Lifetime
-
2005
- 2005-06-22 US US11/157,973 patent/US7326991B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
TW578301B (en) | 2004-03-01 |
KR100501063B1 (en) | 2005-07-18 |
CN1426114A (en) | 2003-06-25 |
JP4027656B2 (en) | 2007-12-26 |
US20040109355A1 (en) | 2004-06-10 |
KR20030047805A (en) | 2003-06-18 |
TW200301012A (en) | 2003-06-16 |
US6952031B2 (en) | 2005-10-04 |
US20050239245A1 (en) | 2005-10-27 |
US7326991B2 (en) | 2008-02-05 |
JP2003179167A (en) | 2003-06-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INTELLECTUAL PROPERTY I CO., LTD. Free format text: FORMER OWNER: SHARP KABUSHIKI KAISHA Effective date: 20120116 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120116 Address after: Budapest Patentee after: Intellectual property rights I Corp. Address before: Osaka Japan Patentee before: Sharp Corp. |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: INTELLECTUAL PROPERTY I CO. Effective date: 20150702 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150702 Address after: Gyeonggi Do, South Korea Patentee after: SAMSUNG ELECTRONICS Co.,Ltd. Address before: Budapest Patentee before: Intellectual property rights I Corp. |
|
CX01 | Expiry of patent term |
Granted publication date: 20050914 |
|
CX01 | Expiry of patent term |