CN1217475A - 低衰减光波导 - Google Patents

低衰减光波导 Download PDF

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CN1217475A
CN1217475A CN98119170A CN98119170A CN1217475A CN 1217475 A CN1217475 A CN 1217475A CN 98119170 A CN98119170 A CN 98119170A CN 98119170 A CN98119170 A CN 98119170A CN 1217475 A CN1217475 A CN 1217475A
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彼得
克里斯多夫
琼斯
马戴平
大卫
金尼
施密斯
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Corning Inc
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Abstract

揭示了一种单模光纤,该光纤的纤芯折射率分布选择分布参数,以提供最低的衰减。给出一个具有相同一般形状和尺寸的分布集合,其子集中包括一组分布,该组分布与集合中的剩余成员相比呈现最低的衰减。发现子集的成员具有最低的有效群折射率ngeff,并且在光纤弯曲的情况下β2的变化最小。

Description

低衰减光波导
本申请以1997年9月12日提交的临时申请60/058,774为基础，我们要求该提交日作为本申请的优先权日。
本发明涉及一种针对低衰减进行优化的光纤。尤其，对任何纤芯折射率分布，通过适当选择纤芯折射率分布的变量，使光纤衰减为最小。
波导特性对折射率分布结构的依赖已在发明人Bhagavatula的首创美国专利4,715,679中得到描述。在该申请中，揭示了具有各种光纤特性的纤芯折射率分布，特别是那些零色散波长移入1550纳米工作窗口内的纤芯折射率分布以及那些在诸如1250纳米至1600纳米的波长扩展范围内色散相对恒定的纤芯折射率分布。
为响应对专用光纤的需求，尤其在高性能波导方面，已加强了对波导纤芯折射率分布的研究。例如，在Gallagher等人的美国专利5,483,612(’612专利)中，揭示了一种纤芯分布设计，该设计提供低偏振模式(low polarization mode)的色散、低衰减、位移的色散零和低色散斜率。已设计出其它的纤芯折射率分布，以满足使用高功率信号或光放大器的应用需求。
当为了达到所需性能而改变光纤分布时，会出现一个问题，即要以损失另一基本性能为代价来实现该性能。例如，某个纤芯折射率设计可以增大有效面积，从而减少信号的非线性畸变。但是，在有效面积较大的光纤中，会严重损害抗弯曲性。因此，纤芯分布设计是一项艰巨的任务，其中模拟研究通常是在生产开发的制造阶段之前。
分布变量的相互作用使得本领域的技术人员除了或可用一种非常概略的方式外，通常不能预计折射率分布的变化对诸如抗弯曲性、衰减、零色散波长以及所选波长范围内的总色散和总色散斜率等波导特性的影响。因此，对波导折射率分布的研究通常包括对特定分布或分布族的计算机模拟。然后，对那些呈现所需特性的折射率分布进行制造测试。
在继续’612专利所揭示的工作时，发现一族分布，该族分布可以生产出其零色散波长大于预选波段并且抗弯曲性极佳的高性能光纤，关于该项工作的描述目前已作为临时申请60/050550提交。
当进一步完成模拟研究和制造测试时，清楚地知道：
-可以找出一特定的分布族，用以提供一组预选的工作参数；并且最令人惊讶的是，
-可以进一步调节该特定的分布族，对衰减作优化，但工作参数没有重大改变。
定义
一纤芯区的半径是根据折射率确定的。一个特定区域具有折射率第一点和折射率最后点。从波导中心线量至折射率第一点位置的半径为纤芯区或纤芯分层的内半径。同样，从波导中心线量至折射率最后点位置的半径为纤芯分层的外半径。纤芯的其它几何定义亦可便于使用。
除非文中特别说明，这里所讨论的折射率分布的参数是如下定义的：
*中心纤芯区的半径是从波导的轴向中心线量至经外推的中心折射率分布与x轴的交点；
*第二环形区的半径是从波导的轴向中心线量至第二环形区基线的中心。
*第二环形区的宽度是两条平行线之间的距离，而平行线是从折射率分布的折射率半高点画至波导半径。
第一环形区的尺寸是由中心区与第二环形区的尺寸之差确定的。
-纤芯折射率分布是一个术语，它描述了沿光纤上所选半径或半径分层的每一点定义的折射率大小。
-复合式纤芯折射率分布描述了至少划分两个不同分层的分布。
-相对折射率百分数(Δ％)为：
Δ％=[(n1 2-nc 2)/2n1 2]×100，
其中n1为纤芯的折射率，而nc为最小的包层折射率。除非另作说明，n1是由％Δ表征的纤心区中的最大折射率。
-术语α分布指满足以下等式的折射率分布：
n(r)=n0(1-Δ[r/a]α)，
其中r为半径，Δ如上定义，a是分布中的最后一点，在分布的第一点将r选择为零，并且α是一实数。例如，三角形分布具有α=1，抛物线分布具有α=2。当α大于约6时，分布基本上为阶跃型。其它折射率分布包括阶跃型折射率、梯形折射率、和圆角的阶跃型折射率，其中圆角是因掺杂剂在折射率快速变化的区域扩散所造成的。
-分布体积(profile volume)定义为2∫r1 12(Δ％rdr)。内分布体积从r=0的波导中心线延伸至交叉半径(crossover raduis)。外分布体积从交叉半径延伸至纤芯的最后一点。由于折射率是没有量钢的，所以分布体积的单位是％μm2。为了避免混淆，分布体积的数字，将附有文字单位。
-交叉半径是根据信号中功率分布随信号波长变化的依赖关系得出的。在内体积中，当波长增大时信号功率下降。在外体积中，当波长增大时信号功率上升。
-光纤的抗弯曲性表述成上述测试条件下引入的衰减。这里所指的弯曲测试是销钉阵列弯曲测试，它用于对光纤的相对抗弯曲性进行比较。为了进行该测试，对基本上没有引入弯曲损耗的光纤测量其衰减．然后把光纤绕销钉阵列弯曲，再次测量衰减。弯曲带来的损耗是两次测得的衰减之间的差值。销钉阵列是一组按单行排列并在一平面上保持固定垂直位置的十个圆柱销钉。销钉的中心至中心间距为5毫米。销钉直径为0.67毫米。在测试期间，施加足以使光纤与销钉表面一部分贴合的张力。
模拟计算中使用的弯曲测试是将光纤绕30毫米直径的心轴一周。
-有效群折射率(ngeff)是光速与群速的比。从Maxwell方程或者特别从标量波动方程可以导出用电磁场、折射率、波长和传输常数对ngeff的数学表达。
-传播常数β又称有效折射率，它是与场传播速度相关的电磁场参数，并且通过解所选波导的标量波动方程可以求出β。由于β依赖于波导的几何形状，所以可以希望通过弯曲波导来改变β。在J.P.Meunier等人于1983年著作的《光学电子学和量子电子学》第15章第77-85页中，可以找到一例标量波动方程，它描述了由一特定的波导几何形状支持的电磁场。
因此，本发明旨在提供一种光纤，其纤芯折射率分布产生一组预定的工作特性，并且就该特定的折射率分布对衰减进行优化。
新型的纤芯折射率分布具有纤芯区和包裹在周围的包层，两者一起形成光纤。为了将光限制在光纤内，纤芯折射率分布中至少必须有一部分的折射率要比至少一部分包层的折射率高。但通常包层的折射率分布为单一的阶跃型分布，虽然也已经进行了对包层折射率作改进的有用设计。
如上定义的纤芯折射率分布是沿波导半径规定部分每一点定义的折射率值。因此，可以将纤芯折射率分布表达为沿半径各点上的折射率值n(r)，其中半径从波导中心0开始，并延伸至半径r0。该纤芯折射率设计成产生一组预定的光纤工作特性。每个工作特性都具有公差极限，以便存在一个能够产生这些波导工作特性的纤芯折射率分布族或组。即使在模拟的情况下(每个工作特性都只有一个单值)，也可以找到提供这些特性的折射率分布族或组。
通过规定折射率的任何径向点r上折射率的变化量δn(r)以及许可的总半径变化量δr0，可以确定能够提供预选波导工作参数的纤芯折射率分布组。
通过对许可的折射率分布族或组进行模拟研究，已找到一个分布子集，该子集中分布的衰减比分布组中的其它成员要低。区分这一较佳子集的波导特性的是有效群折射率ngeff和传播常数β。特别是，具有最低衰减折射率分布的较佳子集比较该分布组的任何其它成员具有最小ngeff，并且当弯曲波导时，传播常数之平方β2的变化最小。可以用任何一种弯曲模拟来计算由弯曲引起的β2的变化。这里描述的弯曲模拟情况是将波导绕直径为30毫米的轴一周。
对于以下类型的折射率分布，已找到了衰减最低的折射率分布族或组：阶跃型折射率单模光纤、梯形折射率分布、圆角的阶跃型折射率分布和由上述分布组合形成的复合型折射率分布。因此，有可能相信实质上每个分布族或组都具有呈现最低衰减的成员，并且与分布组或族的任何其它成员相比，这些成员具有最小ngeff并且弯曲时β2的变化最小。
因此，纤芯折射率分布可以具有正的或负的相对折射率差Δ。折射率分布可以只有一个区域呈阶梯形、梯形、圆角阶梯形或α分布形，其中α可以采用任何实数。另一种方法是，纤芯折射率分布在两个或多个区(定义为纤芯区的分层)中对这些形状进行任何组合或排列。
在新型纤芯折射率分布的一个特定的复合型纤芯实施例中，定义了N个分层。每个分层具有一个Δ％值和一种形状。定义分层的各种宽度和半径(参见上述定义一节)，直至确定复合型纤芯的全部几何尺寸。例如，从波导中心量至特定纤芯折射率分层的最外点，可以确定每个分层的外半径。一般情况下，单模光纤的相对折射率Δ％在0至3.5％的范围内，而最外分层的外半径在1微米至30微米的范围内。较佳的工作波长带是1200纳米至1750纳米，它包括了1300纳米和1550纳米附近的工作窗口。
本发明的一个实施例包括具有三个分层的复合型纤芯。以下详细讨论该实施例。用来计算光纤结构和特性的模型适于计算中心线上的折射率凹陷。在中心线发生掺杂剂减少的情况下，Δ1％的下限降低大约15％。尽管可以通过掺杂剂补偿消除中心线上的降低，但需要更多的时间和成本才能有效地调节其它的分布参数，对所述降低进行补偿。除以上所给的定义上，还有r3是画至第三分层基底中心的半径，而w3是第三分层相对折射率半高点处的宽度。
表1给出了三分层纤芯折射率分布的一个较佳实施例。表1中的波导参数提供了表2所述的光纤特性。
表3给出了第二较佳实施例。具有表3所述参数的光纤也呈现表2的光纤特性。
图1是各种分布类型的总体示意图。
图2示出了三分层的复合型纤芯实施例。
图3示出了二分层的复合型纤芯实施例。
图4是1550纳米处的衰减关于有效群折射率的实验图。
图5是1550纳米处的衰减关于因弯曲引起β2变化的实验图。
光纤纤芯折射率分布的近期研究已可以描述许多具有独特和有益的波导特性的纤芯分布。例如，Bhagavatula的美国专利4,715,679和Gallagher的美国专利5,483,612所揭示的纤芯折射率分布设计成，可以提供适于特定光纤应用的总色散、零色散波长和总色散斜率。这些研究与另外针对各组折射率分布进行的工作一起，表明可以设计出系统性能非常高的光纤。例如，已开发出这样的光纤，它们能够适应使用高功率激光器和光放大器的具有高信息传输率的电信系统。
研究人员通过对新型纤芯折射率分布的研究，发现一般可以用一组或多组分布类型中的任何一种分布类型提供一组所需的波导功能特性。关于在制造过程中使用哪一种分布的决定是由以下因素确定的：便于制造；低成本；波导功能对其制造工艺中的正常变化不敏感。
更近期的工作表明，在评价哪一种分布最适于使用并适于低成本、高效率制造时还必须包括一个附加因素。特别是，该项近期工作已用于鉴别出唯一的最小衰减的纤芯折射率分布子集或子族(与分布集或族的其它成员相比)。
对成品波导就整个纤芯折射率分布族和低衰减子族进行实验，实验表明，衰减的差不是由制造的可变性、瑞利散射或-OH成份产生的。分布集与相关的分布子集之间的衰减差是由分布形状的细节引起的，并且因此称为“分布衰减”。
这里揭示和描述的纤芯折射率分布的新颖特点是，它们是其各自最小分布衰减子集的成员。
对成品光纤的参数模拟研究和实验表明，分布衰减与有效群折射率neff和传播常数β相关。特别是，研究表明，当弯曲波导时，分布衰减最小的光纤具有最小的ngeff和最小的β2的变化。该未预料到的结果为基本上所有类型的电信应用在设计最优化纤芯折射率分布方面提供了另一个重要的工具。
图1示出了本发明一般类型的纤芯折射率分布。注意，相对折射率的参照是包层折射率。折射率分布的实线有一中心点24，其相对折射率百分数Δ％相对较低。Δ％较高的分布部分6例如可以是α分布或圆角阶跃型分布。分布的平坦部分14之后是另一Δ％更低的部分18，区域18的相对折射率为负。另一个α分布或圆角阶跃型分布区例如20接在区域18之后。点22表示分布可以包括附加的环形区。虚线8和10表示接近纤芯中心的其他分布形状。虚线2是阶跃型折射率分布，是相对α分布形状6的另一种选择。虚线12和16示出了分布中区域的Δ％为负的另一些分布形状。
图1还示出了半径和宽度的定义，因为这里要使用这些术语。中心分布的半径3是从纤芯中心线延伸至外推的分布6与x轴相遇的点的直线。如环面20的半径7所示，包裹在中心分布外的环形区的半径一般是从纤芯中心量至环形区的中心。如环面20的宽度5所示，环形区的宽度是在Δ％的半高点处获得的。
对图2所示的分布进行广泛的模拟研究以及制造研究。表1列出了图2中衰减较低的分布子集的参数。
表1
参数       上限    下限
Δ1％     1.30     0.77
r1(微米)  3.41     2.04
Δ2％     0.16     0
Δ3％     0.51     0
r3(微米) 10.21     5.53
w3(微米)  5.76     0
内分布体积(％微米2)    3.62    2.67
外分布体积(％微米2)    7.86    1.00
r3或w3为零的情况仅仅是图3所示的关于纤芯折射率之优化衰减的附加例子。在图2中可以找到表1所给参数的定义。中心α分布的α为1，示作曲线30。中心线28上的折射率小于α分布30的最大折射率。虚线26表示亦可做成使最大折射率位于波导中心线上的分布。区域30的相对折射率为Δ1％，而半径31为r1。区域32的相对折射率为Δ2％。圆角阶梯34的相对折射率为Δ3％，半径33为r3，而宽度35为w3。具有表1所示参数的纤芯折射率分布可以产生表2所给的光纤功能特性。在由表1获得的纤芯折射率分布中，发现有700条以上的分布具有表2所述的需要的功能特性。应该理解，并非表1中所有的参数组合都将产生表2中所述的功能特性。
表2
波导特性                  上限    下限
色散零(纳米)              1595    1575
色散斜率(皮秒/纳米2-千米)0.10    -
模块直径(纳米)             9.1    7.9
截止波长(纳米)            1500    -
销钉阵列弯曲损耗(分贝)       8    -
1550处的衰减(分贝/千米)   0.203   -
表2所示的波导特性是在多路复用的高输入功率电信系统中使用的光纤的特征。选择该例是为了方便，对本发明没有任何的限制。
还模拟了另一种纤芯折射率分布的形状，发现参数的极限可以提供表2所给的波导特性。图3示出了该第二种纤芯折射率形状。同样，我们选用这样的中心分布形状，即中心线折射率38小于α分布40的最大折射率，其中α=1。虚线36表示亦可做成使中心线上没有较低折射率的分布。图3所示的纤芯折射率分布具有两个分层。中心分层40的相对折射率为Δ1％，而半径41为表3中的r1。折射率分布的阶梯部分42具有半径43，表3中用r2表示。分层42的相对折射率为Δ2％。注意，通过把分层42的下降部分外推至水平轴或x轴，可以找出r2的外端点。
表3
参数                     上限    下限
Δ1％                  1.25    1.02
r1                     2.38    1.84
Δ2％                  0.10    0.03
r2                    10.54    6.50
内分布体积(％微米2)    3.35    2.76
外分布体积(％微米2)    7.77    2.24
并非表3中所有可能的参数组合都提供了具有表2所给特性的波导。但是，在模拟研究中，有200条以上用表3参数组合成的折射率分布提供了特性在表2所示范围内的波导。图2的折射率分布一般，比图3例举的分布产生更低的色散斜率，平均大约低0.01皮秒/纳米2-千米。
图4和图5示出了对具有四个不同分布类型的波导进行衰减测量所得的实验结果。光纤类型A、C、和D是对图2所示分布的变型。所有光纤都是色散位移单模光纤。A型光纤可以进一步用表1表征。光纤B是阶跃型折射率的单模光纤。
在图4中，就1550纳米处的衰减对每根波导的有效群折射率ngeff制图。小心控制该过程，以消除因制造不稳定引起的任何数据分散。还消除了因-OH成份效应和瑞利散射产生的数据分散。因此，每种波导类型的点群示出了折射率分布变化(表现为有效群折射率的变化)所引起的衰减变化。对于图示ngeff的变化，阶跃型折射率波导B(黑方框44)示出分布衰减的变化大约为0.013分贝/千米。同样，波导A(黑菱形48)示出0.02分贝/千米的变化；波导C(黑三角46)示出0.015分贝/千米的变化；并且波导D(亮三角47)示出大约0.017分贝/千米的衰减变化。
图5除了就衰减变化与β2的变化制图之外，示出了相同的数据，其中β2的变化是因波导绕大约30毫米心轴一圈引起的。这里，阶跃型折射率波导B((黑方框54)所示的变化与前大致相同。A型波导(黑菱形52)具有类似图2的分布，与图2中其余分布类型(即黑三角56表示的C型波导和亮三角50表示的D型波导)相比，其因β2的弯曲变化产生较大的衰减变化。
对图4和5所画实验数据的主要发现是：
-分布衰减产生于大不相同的分布形状。
-分布衰减与ngeff以及因弯曲产生的β2的变化密切相关。
根据这些结果，可以得出这样的结论，即分布衰减实质上是一种普遍现象。
例子-具有图2所示类型的成品波导
根据图2所示的纤芯折射率分布，制造两根不同的拉丝预制棒。表4给出了两种分布的参数。
表4
参数          拉丝预制棒#1  拉丝预制棒
                               #2
Δ1％               0.868    0.864
r1(微米)            2.773    2.781
Δ2％               0.023    0.025
Δ3％               0.258    0.216
r2(微米)             6.71    7.51
w3(微米)             0.67    0.64
内体积(％微米2)      3.02    3.08
外体积(％微米2)      3.90    4.01
用这些拉丝预制棒产生出的波导的光学特性很好地处于表3所示的规定极限之内。表5示出了对一些波导测量结果。注意，在1310纳米和1550纳米的工作窗口中均有非常低的衰减。因此，这些波导属于低分布衰减波导的子集。
表 5
波导特性               拉丝预制棒# 拉丝预制棒#
                                1       2
色散零(纳米)               1582.5    1584.5
色散斜率(皮秒/纳米2-千米)   0.077    0.073
模块直径(纳米)               8.34    8.22
截止波长(纳米)               1186    1190
1310纳米处的衰减(分贝/千米) 0.371    0.372
1550纳米处的衰减(分贝/千米) 0.199    0.201
这些结果清楚地证明了模拟的准确性和完整性，以及极佳的过程再现性。确定了低衰减分布子集的存在，并且叙述了制造子集中波导的手段。
尽管这里揭示并描述了本发明的特殊实施例，但本发明仅由以下权利要求书限定。

Claims (8)

1．一种经优化具有低衰减的单模光纤，包括：
中心纤芯玻璃区，它具有半径r0和沿所述半径定义的折射率n(r)，形成纤芯折射率分布，
环形包层玻璃层，它包裹在中心纤芯玻璃区的周围并与之接触，所述包层玻璃层具有一宽度和沿所述宽度定义的折射率，形成环形包层玻璃折射率分布，其中至少一部分纤芯折射率分布大于至少一部分包层折射率分布；
所述纤芯折射率分布属于一族折射率分布，折射率分布族是一个折射率分布的集合，任何径向点r上的折射率n(r)均在预定范围δn(r)内，而半径r0在预定范围δr0内，其中折射率分布族的每个成员都在预定的波长带上提供一组预定的波导特性，每个特性在预定的数值范围内，波导特性包括有效群折射率ngeff和传播常数β；所述单模光纤的特征在于，
所述纤芯折射率分布的ngeff是所述折射率分布族中最小的，并且因波导弯曲引起的β2的变化是所述折射率分布族中最小的。
2．如权利要求1所述的单模光纤，其特征在于，所述纤芯折射率分布是从以下分布组成的分布组中选出的：阶跃型分布、圆角的阶跃型分布、梯形分布、α分布和复合型分布，所述复合型分布具有一个中心区分布和至少一个包裹在所述中心区分布外的环形区，其中所述中心区分布和所述至少一个环形区分布是从以下分布组成的分布组中选出的：阶跃型分布、圆角的阶跃型分布、梯形分布和α分布。
3．如权利要求2所述的单模光纤，其特征在于，所述纤芯折射率分布是复合型分布，具有一个中心区和N个环形区，所述中心区和每个环形区用相对折射率Δ％表征，其外半径r从所述波导的中心线延伸至特定折射率区的最后一点，所述中心区的相对折射率为Δ1％，半径为r1，与所述中心区邻接的所述环形区的相对折射率为Δ2％，半径为r2，第j个环形区的相对折射率为Δj％，半径为rj，其中j是整数，从1至N取值，并且r1＞r2…＞rj＞…＞rN，而且任何Δj％都可以为正或负，并且数值可以在0至3.5％范围内，rN位于1微米至30微米的范围内。
4．如权利要求1所述的单模光纤，其特征在于，所述预选波长带在1200纳米至1750纳米的范围内。
5．如权利要求1所述的单模光纤，其特征在于，所述纤芯折射率分布是具有三分层的复合型分布；
中心分层，其半径为r1，相对折射率为Δ1％，中心线为对称轴，
第一环形分层，它包裹在所述中心分层的周围并且与其接触，相对折射率为Δ2％，并且
第二环形分层，它包裹在所述第一环形分层的周围并且与其接触，半径为r3，相对折射率为Δ3％，宽度为w3；其中Δ1％≥Δ3％≥Δ2％≥0。
6．如权利要求5所述的单模光纤，其特征在于，所述中心分层具有一α分布，其中α=1，所述第一环形分层的折射率为阶跃型分布，并且所述第二环形分层的折射率是圆角的阶跃型分布。
7．如权利要求6所述的单模光纤，其特征在于，所述中心线的相对折射率≤Δ1％，并且在0.2％至1.30％的范围内，Δ1％在0.77％至1.30％的范围内，r1在2.04微米至3.41微米的范围内，Δ2％在0至0.16％的范围内，Δ3％在0至0.51％的范围内，r3在5.53微米至10.21微米的范围内，并且w3在0至5.76微米的范围内，所述单模光纤还用内分布体积和外分布体积表征，其中所述内体积在2.67个单位至3.62个单位的范围内，而所述外体积在1.00个单位至7.85个单位的范围内；其中，
对选自所述预定范围的分布参数进行组合，提供具有以下特性的单模光纤：零色散波长在1575纳米至1595纳米的范围内，总色散斜率≤0.10皮秒/纳米2-千米，模块直径在7.9微米至9.1微米的范围内，截止波长≤1500纳米，销钉阵列弯曲引起的衰减≤8分贝，而1550纳米处的衰减≤0.203分贝/千米。
8．如权利要求5所述的单模光纤，其特征在于，Δ3％为零，并且所述第一环形分层的半径r2是从所述波导中心线量至所述第一环形区的外缘，Δ1％在0.86％至1.25％的范围内，r1在1.84微米至2.38微米的范围内，Δ2％在0.03至0.10％的范围内，r2在6.50微米至10.54微米的范围内，所述波导还具有内分布体积和外分布体积，它们分别在2.76个单位至3.35个单位以及2.24个单位至7.77个单位的范围内；其中，
对选自所述预定范围的分布参数进行组合，提供具有以下特性的单模光纤：零色散波长在1575纳米至1595纳米的范围内，总色散斜率≤0.10皮秒/纳米2-千米，模块直径在7.9微米至9.1微米的范围内，截止波长≤1500纳米，销钉阵列弯曲引起的衰减≤8分贝，而1550纳米处的衰减≤0.203分贝/千米。
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US6282354B1 (en) 2001-08-28
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