CN1216284C - Test method for polycrystalline silicon solar battery converting efficiency - Google Patents
Test method for polycrystalline silicon solar battery converting efficiency Download PDFInfo
- Publication number
- CN1216284C CN1216284C CN 03114762 CN03114762A CN1216284C CN 1216284 C CN1216284 C CN 1216284C CN 03114762 CN03114762 CN 03114762 CN 03114762 A CN03114762 A CN 03114762A CN 1216284 C CN1216284 C CN 1216284C
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- Prior art keywords
- solar cell
- conversion efficiency
- polycrystalline silicon
- polysilicon solar
- silicon solar
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 03114762 CN1216284C (en) | 2003-01-07 | 2003-01-07 | Test method for polycrystalline silicon solar battery converting efficiency |
Applications Claiming Priority (1)
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CN 03114762 CN1216284C (en) | 2003-01-07 | 2003-01-07 | Test method for polycrystalline silicon solar battery converting efficiency |
Publications (2)
Publication Number | Publication Date |
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CN1424573A CN1424573A (en) | 2003-06-18 |
CN1216284C true CN1216284C (en) | 2005-08-24 |
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Family Applications (1)
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CN 03114762 Expired - Fee Related CN1216284C (en) | 2003-01-07 | 2003-01-07 | Test method for polycrystalline silicon solar battery converting efficiency |
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CN (1) | CN1216284C (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100414287C (en) * | 2004-03-25 | 2008-08-27 | 上海交通大学 | Parameter goodness method for integral indirect gaped semiconducter material |
CN101299054B (en) * | 2008-05-23 | 2010-12-08 | 南京大学 | Measuring method of dye sensitization nano-film solar cell I-V characteristic and conversion efficiency characteristic |
DE102009039399A1 (en) * | 2009-08-31 | 2011-03-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for measuring a semiconductor structure, which is a solar cell or a precursor of a solar cell |
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2003
- 2003-01-07 CN CN 03114762 patent/CN1216284C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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CN1424573A (en) | 2003-06-18 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: HAREON SOLAR TECHNOLOGY Co.,Ltd. Assignor: Shanghai Jiao Tong University Contract fulfillment period: 2009.4.6 to 2014.4.6 Contract record no.: 2009320000563 Denomination of invention: Test method for polycrystalline silicon solar battery converting efficiency Granted publication date: 20050824 License type: Exclusive license Record date: 20090409 |
|
LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.4.6 TO 2014.4.6; CHANGE OF CONTRACT Name of requester: HAIRUN PHOTOVOLTAIC TECHNOLOGY CO., LTD. Effective date: 20090409 |
|
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: HAREON SOLAR TECHNOLOGY Co.,Ltd. Assignor: Shanghai Jiao Tong University Contract record no.: 2009320000563 Date of cancellation: 20120201 |
|
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: HAREON SOLAR TECHNOLOGY Co.,Ltd. Assignor: Shanghai Jiao Tong University Contract record no.: 2012320000185 Denomination of invention: Test method for polycrystalline silicon solar battery converting efficiency Granted publication date: 20050824 License type: Exclusive License Open date: 20030618 Record date: 20120308 |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050824 |