CN1212588C - Capacitance type fingerprint access chip - Google Patents

Capacitance type fingerprint access chip Download PDF

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Publication number
CN1212588C
CN1212588C CN 02105960 CN02105960A CN1212588C CN 1212588 C CN1212588 C CN 1212588C CN 02105960 CN02105960 CN 02105960 CN 02105960 A CN02105960 A CN 02105960A CN 1212588 C CN1212588 C CN 1212588C
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China
Prior art keywords
capacitance
type fingerprint
access chip
fingerprint access
capacitance type
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CN 02105960
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Chinese (zh)
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CN1450489A (en
Inventor
周正三
张世彬
郑元伟
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祥群科技股份有限公司
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Priority to CN 02105960 priority Critical patent/CN1212588C/en
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Abstract

The present invention relates to a capacitance type fingerprint reading chip which comprises a capacitance sensing element array arranged in a two-dimensional mode and a periphery circuit of a dynamic random access memory (DRAM), wherein the capacitance sensing element array detects the fingerprint peak and the fingerprint valley of a fingerprint by utilizing a charge sharing principle of the DRAM, and the periphery circuit of the DRAM can output the detecting result of each capacitance sensing element. The manufacturing method of the capacitance type fingerprint reading chip is completely matched with the process of an integrated circuit, particularly a complementary metal-oxide semiconductor (CMOS) process. The capacitance type fingerprint reading chip of the present invention can be used for the biological identification of individual identity certification and applied to portable electronic products, such as notebook computers, personal digital assistants, mobile phones, etc. and various security systems.

Description

Capacitance type fingerprint access chip

Technical field

The present invention relates to a kind of capacitance type fingerprint access chip, relate in particular to a kind of capacitance type fingerprint access chip of application class dynamic RAM data read structure.

Background technology

Existing fingerprint reading method, the most ancient the old utilizes finger by ink, be stamped on the paper, utilize in the optical scanning input computing machine again and compare with the database of fingerprint figure, its disadvantage is for reaching the purpose of real-time processing, therefore can't satisfy the demand of more and more real-time authentications, for example: network authentication, ecommerce, portable type electronic product is maintained secrecy, IC-card the personal status authenticate, safety system or the like.

Real-time fingerprint reading method just becomes the gordian technique in the biological identification market.Traditional real-time fingerprint is read as optical mode, sees also United States Patent (USP) numbering 4,053,228 and 4,340,300, it develops suitable maturation and degree of accuracy is also high, yet volume is too huge and price is also comparatively expensive, is not suitable for various portable type electronic products and universalness and promotes.

For this reason, utilize the chip type fingerprint acquisition apparatus of silicon semiconductor to arise at the historic moment, overcome the shortcoming of above-mentioned optical profile type.Based on the consideration of silicon integrated circuit manufacturing process, capacitance type fingerprint access chip becomes the most direct and simple method, and its document early sees also United States Patent (USP) numbering 4,290,052,4,353,056.And even afterwards along with the structure of the progressing greatly of integrated circuit, this kind capacitance type fingerprint access chip also gradually in the ripe commercial use that enters, a kind of structure of utilizing capacitor charge and discharge principle sensing small capacitance value that people such as the first-elected Alexander G.Dickinson of its topmost development person are developed, as United States Patent (USP) numbering 6,016,355 and 6,049,620 is described.

But this kind discharges and recharges the main shortcoming of the mode of reading and is that the characteristic of fixed current discharge MOS (by foreign current mirror Current Mirror control) of each capacitance sensing unit is consistent on must control chip and could obtains good output signal, but general fingerprint access chip comprises up to ten thousand above sensing units, be difficult in the characteristic unanimity that controls to each discharge MOS on the technology, thereby reduce the quality of output fingerprint signal.Simultaneously, said method also can't provide the good method that prevents electrostatic breakdown.

Summary of the invention

The purpose of this invention is to provide a kind of capacitance type fingerprint access chip, make its charge sharing principle of being used dynamic RAM, carry out the detection of capacitance.

Another purpose of the present invention provides a kind of signal and reads structure, makes a capacitance type fingerprint access chip be utilized the peripheral circuit of the dynamic RAM (DRAM) of class, reads the data of capacitance sensing unit.

In order to achieve the above object, the invention provides a kind of capacitance type fingerprint access chip, comprise: a capacitance sensing element array comprises a plurality of capacitance sensing unit; One insulating surface is covered on this sense side element array, as proficiency abutment face; And a class dynamic RAM peripheral circuit, comprise at least: a column decoder is disposed at by this capacitance sensing element array; A plurality of character lines are interspersed in this capacitance sensing element array abreast, and are connected to this column decoder; Delegation's multiplexer is disposed at the side adjacent to this column decoder of this capacitance sensing element array; And a plurality of bit lines, be interspersed in abreast in this sense side element array, and be netted staggered, and these a plurality of bit lines are to be connected to this row multiplexer with these a plurality of character lines; Wherein, such dynamic RAM peripheral circuit is input one first voltage earlier, makes the sense capacitance two ends in this each capacitance sensing unit produce voltage difference, and make the reference capacitance two ends no-voltage in it poor; And then import one second voltage, make this sense capacitance and this reference capacitance carry out electric charge and share; Again with the voltage output after stable in each capacitance sensing unit.

According to one embodiment of the invention, this capacitance type fingerprint access chip comprises: a capacitance sensing element array, an insulating surface and a class dynamic RAM peripheral circuit; Wherein, the sensing element array comprises a plurality of capacitance sensing unit, and each capacitance sensing unit also comprises: a sensor construction, comprise a sensing electrode, a reference electrode and be disposed at sensing electrode and reference electrode between an insulation course; And a signal read circuits, in order to each capacitance sensing unit is connected to class dynamic RAM peripheral circuit.

Wherein, insulating surface is covered on the sense side element array, as proficiency abutment face; Between finger, insulating surface and sensing electrode, can form sense capacitance, and between sensing electrode, insulation course and reference electrode, can form reference capacitance; Class dynamic RAM peripheral circuit then comprises at least: a column decoder is disposed at by the capacitance sensing element array; A plurality of character lines are interspersed in the capacitance sensing element array abreast, and are connected to this column decoder; Delegation's multiplexer is disposed at the other side adjacent to this column decoder of capacitance sensing element array; And a plurality of bit lines, vertically be interspersed in the sense side element array, and be netted staggered, and these a plurality of bit lines are connected to capable multiplexer with a plurality of character lines; Wherein, such dynamic RAM peripheral circuit input first voltage is earlier made the replacement control action in signal read circuits, makes sense capacitance two ends generation voltage difference (or the reference capacitance two ends produce voltage difference) and makes reference capacitance two ends no-voltage poor (or sense capacitance two ends no-voltage is poor); And then import second voltage and share as electric charge and read action in signal read circuits, the quantity of electric charge of accumulating originally in the sense capacitance two ends (or the quantity of electric charge at reference capacitance two ends) is shared with reference capacitance two ends (or sense capacitance two ends) with some; Again with the voltage output after stable in each capacitance sensing unit.

According to another embodiment of the present invention, this capacitance type fingerprint access chip also comprises another capacitance sensing element array and another kind of dynamic RAM peripheral circuit, and a trigger switch.This trigger switch is disposed between this capacitance sensing element array that is divided into two, and in order to when finger contacts this capacitance type fingerprint access chip, opens this chip power.

According to the present invention, this capacitance type fingerprint access chip also comprises a crooked strip metallic film, is disposed on the insulating surface, in order to heat this capacitance type fingerprint access chip, to remove aqueous vapor.

According to the present invention, this crooked strip metallic film also can be connected to earthing power supply, in order to prevent electrostatic breakdown.

According to the present invention, this crooked strip metallic film was controlled with being connected by trigger switch of heating power supply or earthing power supply.

According to the present invention, this trigger switch comprises a trigger electrode; One triggers dielectric layer, is disposed on the trigger electrode; Reach one and trigger phase inverter; Wherein, when this trigger switch of finger contact, finger surface can form with trigger electrode and trigger electric capacity, this triggering electric capacity can carry out electric charge with the storage capacitors under the trigger electrode and share, make the voltage decline of this trigger electrode of flowing through and be lower than the reverse voltage that triggers phase inverter, to open the power supply of this capacitance type fingerprint access chip.

Be different from other capacitance type fingerprint access chip, spirit of the present invention is to utilize the design concept of the data read structure of class dynamic RAM (DRAM) as capacitance type fingerprint access chip of the present invention, its advantage is that the development of DRAM is quite complete and ripe, and the system architecture development required for fingerprint access chip is quite easy.When particularly being computing machine and various portable electronics applications, can provide quite easy inset type design (being used as a DRAM handles).And the manufacturing course (high-order technology resolution) of using DRAM can also improve this production yield (only needing low resolution technology) greatly, reduces cost.Capacitance type fingerprint access chip of the present invention can be used as the biological identification use that the personal status authenticates, and is applied to portable type electronic products such as notebook computer, personal digital assistant and mobile phone, and various safety system.

Description of drawings

About purpose of the present invention, characteristic and advantage, after reference following content and description of drawings, can be more cheer and bright.

Fig. 1 is the synoptic diagram of finger contact capacitance type fingerprint reading device of the present invention;

Fig. 1 a is the actual scale-of-two fingerprint image of obtaining of capacitance type fingerprint access chip of the present invention

Fig. 2 is the main layout structure synoptic diagram of capacitance type fingerprint access chip of the present invention;

Fig. 3 is the structural representation of the sensing element array of capacitance type fingerprint access chip of the present invention;

Fig. 4 is the enlarged diagram of finger contact sensing unit;

Fig. 5 is the sensing element structure synoptic diagram of the capacitance type fingerprint access chip of the embodiment of the invention;

Fig. 6 is the sensing element structure synoptic diagram of the capacitance type fingerprint access chip of further embodiment of this invention;

Fig. 7 is the design diagram that the present invention solves electrostatic breakdown and finger surface different potentials;

Fig. 8 is the structural representation that the condenser type of the embodiment of the invention triggers switch.

Symbol description among the figure:

1 finger

10 substrates

11 line peaks

11a capacitance curve

12 line paddy

2 devices

20 sensing units

24 crooked strip metallic films

241 switches

242 heating power supplies

201,201a capacitance sensing element array

202 trigger switches

The 202a condenser type triggers switch

203 column decoders

204 row multiplexers

205 comparers

206 analog/digital converters

213 character lines

214 bit lines

30 insulating surfaces

31,31a sensing electrode

32 reference electrodes

33 insulation courses

34,34a sensor construction

35,35a signal read circuits

311 P type MOS source followers

311a N type MOS source follower

313,313a reset switch

315 fingers

316,317 replacements point

318 end points

320 reversers

324,324a, 324 ', 324a ' sense capacitance

325,325a reference capacitance

328 shutter releases

40 trigger electrodes

41 trigger dielectric layer

401 trigger electric capacity

402 storage capacitors

406 trigger phase inverter

407 trigger driving voltage

Embodiment

See also Fig. 1, it is the synoptic diagram that utilizes capacitance type fingerprint access chip of the present invention to read as finger print.Wherein fingerprint access chip 2 comprises: a plurality of capacitance sensing unit 20 arranges with two dimension (2-D) array way, when finger 1 this chip 2 of contact, the irregularly shaped line peak (Ridge) 11 of pointing 1 surface can contact with partition capacitance sensing unit 20, and on this device 2, stay capacitance curve 11a corresponding to this line peak 11, just can recognize the shape at original fingerprint line peak 11 by the shape that reads capacitance curve 11a, example as shown in Figure 1a, be capacitance type fingerprint access chip of the present invention the actual scale-of-two fingerprint image that reads, in order to evidence innovation implementation of the present invention.

Structure for clearer understanding capacitance type fingerprint access chip shown in Figure 1 sees also Fig. 2.The topological design that shows the capacitance type fingerprint access chip of one embodiment of the invention among the figure.Present embodiment mainly is the layout type that has adopted class DRAM, and primary structure comprises two identical capacitance sensing element array 201,201a and a trigger switch 202, to piece together out a complete fingerprint access chip 2.This kind structure is in order to reduce the stray capacitance of lead in DRAM, then is to adopt this structure for adding a trigger switch 202 in the present invention.Each capacitance sensing element array 201,201a comprise M * N capacitance sensing unit, a class DRAM peripheral circuit and an insulating surface (not shown).Wherein, this insulating surface is as proficiency abutment face.

In addition, capacitance type fingerprint access chip of the present invention also can only comprise a capacitance sensing element array and corresponding class DRAM peripheral circuit thereof.

In the embodiment shown in Figure 2, two capacitance sensing element array 201,201a intermediate layout design the trigger switch 202 of a long strip type, and the equal in length of this trigger switch 202 is in the length of M capacitance sensing unit.Such trigger switch layout can guarantee to point and put arbitrarily in fingerprint access chip 2 surfaces, and having at least partly, fingerprint line peak 11 contacts with trigger switch 202.The design of trigger switch 202 is in order to save the power consumption of fingerprint access chip 2, particularly in most standby time, just only open the power supply that reads chip when the finger contact.The principle of relevant trigger switch 202 sees also the detailed description of back.

In addition, a crooked strip metallic film 24 also can be set, in order to be connected to a ground connection GND or a heating power supply 242 on the surface of this capacitance type fingerprint access chip 2.Being connected of 242 of this crooked strip metallic film 24 and ground connection GND or heating power supplies is to control by one group of switch 241.When this crooked strip metallic film 24 connects ground connection GND, be by the lightning rod principle, conducting is a ground state near the static of object, to prevent electrostatic breakdown.When this crooked strip metallic film 24 is connected to heating power supply 242, can heat this capacitance type fingerprint access chip surface, make the residual water evaporates in finger contact back.The switching of switch 241 then is by trigger switch 202 and device logic control.

Referring to Fig. 3, the peripheric circuit structure of each capacitance sensing element array 201,201a, at least must comprise a column decoder 203 and delegation's multiplexer 204 to select to read the voltage signal of each capacitance sensing unit, the present invention also can export the voltage signal of output by a comparer 205 or an analog-digital converter 206, so that the image information of scale-of-two (Binary) or gray level (Gray Level) to be provided.

Referring to Fig. 4, be the enlarged diagram of finger hand capacity sensing element array.Wherein, single capacitance sensing unit 20 utilizes the integrated circuit technology manufacturing, particularly CMOS technology.The basic structure of each capacitance sensing unit 20 comprises: a sensor construction 34 and a signal read circuits 35 (this figure does not show).Sensor construction 34 comprises a sensing electrode 31, a reference electrode 32 and an insulation course 33.Sensing electrode 31 utilizes last one smithcraft of CMOS technology to be made.Just (its capacitance is C to form a sense capacitance 324 by the insulating surface that is covered in its top with 11 of the hand fingerprint peakses that contacts Fr).If the contactee is that 324 ' (its capacitance is C for finger line paddy 12 sense capacitance Fv) (comprising a clearance), because finger is considered as a conductor, so C FrMuch larger than C FvThe material of insulating surface is generally the last protection dielectric layer of CMOS technology.Existing material is the lamination of monox and silicon nitride, and thickness is then looked selected technology and different, and it is usually between 0.8~1.2 micron.Yet, also can increase a high rigidity, high-k material such as barium titanate, strontium titanates, silit and tantalum oxide etc. thereon, and its thickness is between 0.5 ~ 2 micron in order to increase fingerprint device serviceable life.

Sensing electrode 31, insulation course 33 and 32 of reference electrodes then are to form a reference capacitance 325.The design of sense capacitance and reference capacitance is in order to use as charge sharing principle, this principle designs from DRAM, but difference is DRAM and utilizes the stray capacitance of lead as reference electric capacity, and the present invention changes to the reference capacitance of a particular design with it.After finger had contacted apparatus surface, the balanced voltage after a fixed voltage (Vdd) passes through sense capacitance and the reference capacitance electric charge is shared will be because of C FrWith C FvDifferent and different, just can distinguish line peak or line paddy by reading of voltage.

Referring to Fig. 5, it is an embodiment of the single capacitance sensing of capacitance type fingerprint access chip of the present invention unit, provides a kind of signal read circuits 35 in capacitance sensing unit 20, replaces the simple transistor switch of DRAM.Design shown in Figure 5 comprises: a sensor construction 34 and a signal read circuits 35.Wherein sensor construction 34 described as before, signal read circuits 35 then is made of reset (reset) switch 313 and a P type MOS source follower 311 (PMOS SourceFollower) of a reverser 320.The mode of operation of this signal read circuits 35 is described as follows:

When the capacitance sensing unit 20 that finger 315 has contacted fingerprint access chip, trigger switch 202 will be opened the power supply of capacitance sensing element array 201 or 201a and corresponding circuits thereof and read logic.At first, first voltage of input replacement point 316 is 0V, and phase inverter 320 makes that the voltage of reference electrode 32 is Vdd, and reset switch 313 is also kept opening and made that the voltage of sensing electrode 31 also is Vdd simultaneously, therefore reference capacitance 325 two ends do not have potential difference (PD), so stored charge not.

Yet the sense capacitance 324 or 324 ' of sensing electrode 31 and 315 formation of finger is because of the quantity of electric charge Q on the sensing electrode that Vdd is accumulated in 31 31Then be

Q 31=Vdd*(C 324+C 326)??(1)

C wherein 326Be stray capacitance.

Then, be second voltage of Vdd to point 316 input voltage values of resetting, reset switch 313 is closed, cut off being connected of sensing electrode 31 and Vdd, also utilize phase inverter 320 that the reference electrode 32 of reference capacitance 325 is switched to ground state by Vdd.Therefore, be accumulated in the quantity of electric charge Q of sensing electrode 31 31Can redistribute, electric charge is redistributed the voltage V that stable back (in several nanosecond nano second) can get sensing electrode point 31For

V 31=Q 31/(C 324+C 325+C 326)????(2)

With the Q in the formula (1) 31Bring in the formula (2) and can get

V 31=Vdd*(C 324+C 326)/(C 324+C 325+C 326)??(3)

General stray capacitance C 326(<10fF) is compared to testing capacitance C 324(50 ~ 150fF) and reference capacitance C 325(50 ~ 150fF) is negligible, so V 31Be actually by C 324And C 325Determine and V 31Be that output voltage is Vout by the 311 coupling outputs of P type MOS source follower.

Seeing also Fig. 6, is another embodiment of capacitance sensing unit 20, comprises: a sensor construction 34a and reads circuit 35a.Wherein sensor construction 34a consists of sense capacitance 324a or 324a ', and reference capacitance 325a; Consist of a shutter release 328, a reset switch 313a and a N type MOS source follower 311a and read circuit 35a.It is described in detail as follows:

Contacted fingerprint access chip when pointing 315, trigger switch 202 has been opened the power supply of capacitance sensing element array and corresponding circuits thereof and has been read logic.At first, one first voltage of input replacement point 317 is 0V, simultaneously reset switch 313a also keeps opening and makes sensing electrode 31a voltage be in ground state, this moment sense capacitance 324a or 324a ' two ends do not have or potential difference (PD) almost, reference capacitance 325a two ends then are the Vdd potential difference (PD) simultaneously.

And then be one second voltage of Vdd to point 317 input voltage values of resetting, reset switch 313a is closed, cut-out sensing electrode 31 is connected with GND's, and a pulse voltage signal opening/closing shutter release 328 is provided simultaneously, is accumulated in the quantity of electric charge Q of sensing electrode 31 31Can redistribute, electric charge is redistributed stable back (in several nanosecond nano second) but the burning voltage V of invocation point 318 31a ', and V 31a 'Be that output voltage is Vout by N type MOS source follower 311a coupling output.

Wherein, utilize the shutter action of shutter release 328 as CHARGE DISTRIBUTION, the shutter principle of similar camera, can contact moment at fingerprint and promptly read the data of all sensing units of whole array element, and with it locking in the point 318, reading in regular turn, even the vibration of finger can not influence yet, also is the great advantage of this embodiment again.

The present invention except above-mentioned CMOS integrated circuit technology and the class DRAM data read structure utilized with the design capacitance formula fingerprint access chip, also proposed to solve the method for general capacitance type fingerprint access chip electrostatic breakdown and the interference of residual aqueous vapor, the source form of this kind interference is formed noise electric capacity between the electric charge of the dust of apparatus surface and residual aqueous vapor and sensing electrode, the distortion that causes the finger lines to read.And generally the principle that reads of capacitance type fingerprint access chip supposes that all finger is an equipotential (ground connection) body, and actual conditions are quite different, cause the output signal difference of same lines level line difference.

For this reason, see also Fig. 2 and Fig. 7, it is the design that the embodiment of the invention solves electrostatic breakdown and finger surface different potentials.Being mainly provides a crooked strip metallic film 24 the most surperficial in capacitance type fingerprint access chip of the present invention, and this crooked strip metallic film 24 is to be connected to a ground connection GND state or a heating power supply 242 by a switch 241.If after trigger switch 202 activated, 24 of then crooked strip metallic films were connected to ground connection GND state.This measure can eliminate near between finger static, guarantee that the circuit component in the device do not pointed the electrostatic breakdown of contact.Simultaneously, because finger contacts with the crooked strip metallic film 24 of ground connection, guaranteed that the finger each point is positioned at identical earthing potential, can provide more accurate measurement.TiN in the material use CMOS technology of this crooked strip metallic film, because except conductor characteristics, suitable abrasion performance of TiN and corrosion are fit to long-term the use.

See also Fig. 2, it is that the embodiment of the invention solves residual aqueous vapor design, by aforementioned crooked strip metallic film, be connected to a heating power supply 242 by switch 241, this connecting moves activate normally be finger leave read chip after, make the aqueous vapor evaporation with the heating arrangement surface, guarantee that apparatus surface does not have the interference capacitors that moisture causes, the switching of switch 241 then is by trigger switch 201 and device logic control.

In addition, trigger switch 202 of the present invention also can be designed to a condenser type and trigger switch 202a, after taking a decision as to whether the finger contact, and opening device power supply again.This measure can be saved the power consumption of fingerprint access chip, and (power consumption is about 50 ~ 150mW) during operation, in order to being used in portable type electronic product.The structure that condenser type of the present invention triggers switch sees also Fig. 8.This condenser type triggers switch 202a and comprises a trigger electrode 40, a triggering dielectric layer 41 and a triggering reverser 406.Wherein, the material that triggers dielectric layer 41 can be identical with the insulating surface 30 on capacitance sensing element array surface, utilizes the last protection dielectric layer of CMOS technology to make, and thickness is between 0.8~1.2 micron.Also can use material such as barium titanate, strontium titanates, silit and the tantalum oxide etc. of a high rigidity, high-dielectric coefficient, and its thickness is between 0.5 ~ 2 micron.

If finger has contacted apparatus surface, then and trigger dielectric layer 41,40 of trigger electrodes have formed one and have triggered electric capacity 401, based on identical charge sharing principle, trigger electric capacity 401 and shared the electric charge that is stored in storage capacitors 402 originally, make magnitude of voltage moment of 40 of trigger electrodes drop to a voltage quasi position V by fixed voltage Vdd Min, work as V MinValue is during less than the reverse voltage that triggers phase inverter 406 (generally being about 2.0 ~ 2.5 volts), and trigger pip 407 can transfer 1 to by 0, forms a rising voltage signal and can be used to be used as the drive signal of device trigger switch, opens fingerprint access chip 2 power supplys.The design of whole trigger switch 202 and manufacture then are entirely identical to aforesaid capacitance sensing unit, do not give unnecessary details at this, but the present invention can so that fingerprint device in most of standby time, power consumption quite is fit to be applied to portable type electronic product less than 1mW.

The specific embodiment that is proposed in the detailed description of preferred embodiment is only in order to convenient explanation technology contents of the present invention, but not with narrow sense of the present invention be limited to the foregoing description, under the situation that does not exceed spirit of the present invention and claims scope, the many variations of being done is implemented, and still belongs to scope of the present invention.

Claims (52)

1. capacitance type fingerprint access chip comprises:
One capacitance sensing element array comprises a plurality of capacitance sensing unit;
One insulating surface is covered on this sense side element array, as proficiency abutment face; And
One class dynamic RAM peripheral circuit, in order to receive one first voltage, one of make in this each capacitance sensing unit the sense capacitance two ends produce voltage difference, and one of make in it reference capacitance two ends no-voltage poor, such DRAM (Dynamic Random Access Memory) peripheral circuit comprises at least:
One column decoder is disposed at by this capacitance sensing element array;
A plurality of character lines are interspersed in this capacitance sensing element array abreast, and are connected to this column decoder;
Delegation's multiplexer is disposed at the side adjacent to this column decoder of this capacitance sensing element array; And
A plurality of bit lines are interspersed in this sense side element array abreast, and are netted staggered with these a plurality of character lines, and these a plurality of bit lines are to be connected to this row multiplexer;
Wherein, such DRAM (Dynamic Random Access Memory) peripheral circuit makes this sense capacitance and this reference capacitance carry out electric charge and shares more in order to receive one second voltage, again with the voltage output after stable in each capacitance sensing unit.
2. capacitance type fingerprint access chip as claimed in claim 1 is characterized in that: this each capacitance sensing unit also comprises:
One sensor construction comprises:
One sensing electrode forms this sense capacitance with finger and this insulating surface;
One reference electrode; And
One insulation course is disposed between this sensing electrode and this reference electrode, and forms this reference capacitance with this sensing electrode and this reference electrode; And
One signal read circuits is disposed at by this sensor construction, in order to connect this sensor construction and adjacent this character line and this bit line.
3. capacitance type fingerprint access chip as claimed in claim 2 is characterized in that: this signal read circuits comprises:
One P type MOS source follower, in order to isolated lead stray capacitance, the balanced voltage coupling output after sense capacitance and reference capacitance shared.
4. capacitance type fingerprint access chip as claimed in claim 3 is characterized in that: such dynamic RAM peripheral circuit also comprises:
One comparer is connected to this row multiplexer, in order to the output binary message.
5. capacitance type fingerprint access chip as claimed in claim 3 is characterized in that: such dynamic RAM peripheral circuit also comprises:
One analog/digital converter is connected to this row multiplexer, in order to output gray level information.
6. capacitance type fingerprint access chip as claimed in claim 1, wherein, this insulating surface is to be made by last pipe protection dielectric layer of CMOS (Complementary Metal Oxide Semiconductor) integrated circuit manufacturing process.
7. capacitance type fingerprint access chip as claimed in claim 6, wherein, it is smooth more to comprise one deck barium titanate, strontium titanates, silit or oxidation on this insulating surface.
8. capacitance type fingerprint access chip as claimed in claim 7, wherein, the smooth thickness of this layer barium titanate, strontium titanates, silit or oxidation is 0.5 to 2 micron.
9. capacitance type fingerprint access chip as claimed in claim 1, wherein, this capacitance type fingerprint access chip is to utilize the integrated circuit manufacturing process to be made.
10. capacitance type fingerprint access chip as claimed in claim 9, wherein, this capacitance type fingerprint access chip is to utilize the CMOS (Complementary Metal Oxide Semiconductor) manufacturing process to be made.
11. capacitance type fingerprint access chip as claimed in claim 2, wherein, this sensing electrode is to be made by last one metal level of CMOS (Complementary Metal Oxide Semiconductor) integrated circuit manufacturing process.
12. a capacitance type fingerprint access chip comprises:
One capacitance sensing element array comprises a plurality of capacitance sensing unit;
One insulating surface is covered on this sense side element array, as proficiency abutment face; And
One class dynamic RAM peripheral circuit, in order to receive one first voltage, make the sense capacitance two ends in this each capacitance sensing unit produce voltage difference, and make the reference capacitance two ends no-voltage in it poor, such DRAM (Dynamic Random Access Memory) peripheral circuit comprises:
One column decoder is disposed at by this capacitance sensing element array;
A plurality of character lines are interspersed in this capacitance sensing element array abreast, and are connected to this column decoder;
Delegation's multiplexer is disposed at the side adjacent to this column decoder of this capacitance sensing element array; And
A plurality of bit lines are interspersed in this sense side element array abreast, and are netted staggered with these a plurality of character lines, and these a plurality of bit lines are connected to this row multiplexer;
Wherein, such DRAM (Dynamic Random Access Memory) peripheral circuit makes this sense capacitance and this reference capacitance carry out electric charge and shares more in order to receive one second voltage, again with the voltage output after stable in each capacitance sensing unit.
13. capacitance type fingerprint access chip as claimed in claim 12 is characterized in that:
This each capacitance sensing unit also comprises:
One sensor construction comprises:
One sensing electrode forms this sense capacitance with finger and this insulating surface;
One reference electrode, and form this reference capacitance with this sensing electrode and this reference electrode; And
One insulation course is disposed between this sensing electrode and this reference electrode; And
One signal read circuits is disposed at by this sensor construction, in order to connect this sensor construction and adjacent this character line and this bit line.
14. capacitance type fingerprint access chip as claimed in claim 13 is characterized in that: this signal read circuits also comprises:
One shutter release connects this sense capacitance and this reference capacitance controlling being connected of this sense capacitance and this reference capacitance, opens the moment of closing subsequently at it and can make and carry out electric charge between this sense capacitance and this reference capacitance and share; And
One N type MOS source follower, be connected to this shutter release and this sense capacitance and this reference capacitance one of them with isolated lead stray capacitance, the balanced voltage coupling output after sense capacitance and reference capacitance shared.
15. capacitance type fingerprint access chip as claimed in claim 14 is characterized in that: such dynamic RAM peripheral circuit also comprises:
One comparer is connected to this row multiplexer, in order to the output binary message.
16. capacitance type fingerprint access chip as claimed in claim 14 is characterized in that: this dynamic RAM peripheral circuit also comprises:
One analog/digital converter is connected to this row multiplexer, in order to output gray level information.
17. capacitance type fingerprint access chip as claimed in claim 12, wherein, this insulating surface is to be made by last pipe protection dielectric layer of CMOS (Complementary Metal Oxide Semiconductor) integrated circuit manufacturing process.
18. capacitance type fingerprint access chip as claimed in claim 17, wherein, it is smooth more to comprise one deck barium titanate, strontium titanates, silit or oxidation on this insulating surface.
19. capacitance type fingerprint access chip as claimed in claim 18, wherein, the smooth thickness of this layer barium titanate, strontium titanates, silit or oxidation is 0.5 to 2 micron.
20. capacitance type fingerprint access chip as claimed in claim 12, wherein, this capacitance type fingerprint access chip system utilizes the integrated circuit manufacturing process to be made.
21. capacitance type fingerprint access chip as claimed in claim 20, wherein, this capacitance type fingerprint access chip is to utilize the CMOS (Complementary Metal Oxide Semiconductor) manufacturing process to be made.
22. capacitance type fingerprint access chip as claimed in claim 13, wherein, this sensing electrode is to be made by last one metal level of CMOS (Complementary Metal Oxide Semiconductor) (CMOS) integrated circuit manufacturing process.
23. a capacitance type fingerprint access chip comprises:
Two capacitance sensing element array, each capacitance sensing element array comprise a plurality of capacitance sensing unit;
One insulating surface is covered on these two the sense side element array, as proficiency abutment face;
Two class dynamic RAM peripheral circuits, correspond to this each capacitance sensing element array separately, this each class dynamic RAM peripheral circuit is in order to receive one first voltage, make the sense capacitance two ends in this each capacitance sensing unit produce voltage difference, and make the reference capacitance two ends no-voltage in it poor, such DRAM (Dynamic Random Access Memory) peripheral circuit, it comprises:
One column decoder is disposed at by this capacitance sensing element array;
A plurality of character lines are interspersed in this capacitance sensing element array abreast, and are connected to this column decoder;
Delegation's multiplexer is disposed at the side adjacent to this column decoder of this capacitance sensing element array; And
A plurality of bit lines are interspersed in this sense side element array abreast, and are netted staggered with these a plurality of character lines, and these a plurality of bit lines are connected to this row multiplexer; And
One trigger switch is disposed between these two capacitance sensing element array, in order to when finger contacts this capacitance type fingerprint access chip, opens this device power supply;
Wherein, such DRAM (Dynamic Random Access Memory) peripheral circuit makes this sense capacitance and this reference capacitance carry out electric charge and shares more in order to receive one second voltage, again with the voltage output after stable in each capacitance sensing unit.
24. capacitance type fingerprint access chip as claimed in claim 23 is characterized in that: this each capacitance sensing unit also comprises:
One sensor construction comprises:
One sensing electrode forms this sense capacitance with finger and this insulating surface;
One reference electrode, and form this reference capacitance with this sensing electrode and this reference electrode; And
One insulation course is disposed between this sensing electrode and this reference electrode; And
One signal read circuits is disposed at by this sensor construction, in order to connect this sensor construction and adjacent this character line and this bit line.
25. capacitance type fingerprint access chip as claimed in claim 24 is characterized in that: this signal read circuits also comprises:
One P type MOS source follower, in order to isolated lead stray capacitance, the balanced voltage coupling output after sense capacitance and reference capacitance shared.
26. capacitance type fingerprint access chip as claimed in claim 25 is characterized in that: such dynamic RAM peripheral circuit also comprises:
One comparer is connected to this row multiplexer, in order to the output binary message.
27. capacitance type fingerprint access chip as claimed in claim 25 is characterized in that: such dynamic RAM peripheral circuit also comprises:
One analog/digital converter is connected to this row multiplexer, in order to output gray level information.
28. capacitance type fingerprint access chip as claimed in claim 23 is characterized in that: this capacitance type fingerprint access chip also comprises:
One crooked strip metallic film is disposed on this insulating surface, in order to be connected to a heating power supply or an earthing power supply, to remove aqueous vapor or to prevent electrostatic breakdown; Wherein, be connected system by this trigger switch control between this bending strip metallic film and this heating power supply or this earthing power supply.
29. capacitance type fingerprint access chip as claimed in claim 23 is characterized in that: this trigger switch comprises:
One trigger electrode;
One triggers dielectric layer, is disposed on this trigger electrode; And
One triggers phase inverter; Wherein, when this trigger switch of finger contact, finger surface can form one with this trigger electrode and trigger electric capacity, this triggering electric capacity can carry out electric charge with the storage capacitors under this trigger electrode and share, one voltage of this trigger electrode of flowing through is descended and be lower than the reverse voltage of this triggering phase inverter, to open the power supply of this capacitance type fingerprint access chip.
30. capacitance type fingerprint access chip as claimed in claim 23, wherein, this insulating surface is to be made by last pipe protection dielectric layer of CMOS (Complementary Metal Oxide Semiconductor) (CMOS) integrated circuit manufacturing process.
31. capacitance type fingerprint access chip as claimed in claim 30, wherein, it is smooth more to comprise one deck barium titanate, strontium titanates, silit or oxidation on this insulating surface.
32. capacitance type fingerprint access chip as claimed in claim 31, wherein, the smooth thickness of this layer barium titanate, strontium titanates, silit or oxidation is 0.5 to 2 micron.
33. capacitance type fingerprint access chip as claimed in claim 23, wherein, this capacitance type fingerprint access chip is to utilize the integrated circuit manufacturing process to be made.
34. capacitance type fingerprint access chip as claimed in claim 33, wherein, this capacitance type fingerprint access chip is to utilize the CMOS (Complementary Metal Oxide Semiconductor) manufacturing process to be made.
35. capacitance type fingerprint access chip as claimed in claim 24, wherein, this sensing electrode is to be made by last one metal level of CMOS (Complementary Metal Oxide Semiconductor) (CMOS) integrated circuit manufacturing process.
36. a capacitance type fingerprint access chip comprises:
Two capacitance sensing element array, each capacitance sensing element array comprise a plurality of capacitance sensing unit;
One insulating surface is covered on these two the sense side element array, as proficiency abutment face;
Two class dynamic RAM peripheral circuits, correspond to this each capacitance sensing element array separately, this each class dynamic RAM peripheral circuit is in order to receive one first voltage, make the sense capacitance two ends in this each capacitance sensing unit produce voltage difference, and make the reference capacitance two ends no-voltage in it poor, this each class DRAM (Dynamic Random Access Memory) peripheral circuit, it comprises:
One column decoder is disposed at by this capacitance sensing element array;
A plurality of character lines are interspersed in this capacitance sensing element array abreast, and are connected to this column decoder;
Delegation's multiplexer is disposed at the side adjacent to this column decoder of this capacitance sensing element array; And
A plurality of bit lines are interspersed in this sense side element array abreast, and are netted staggered with these a plurality of character lines, and these a plurality of bit lines are to be connected to this row multiplexer; And
One trigger switch is disposed between these two capacitance sensing element array, in order to when finger contacts this capacitance type fingerprint access chip, opens this device power supply;
Wherein, such DRAM (Dynamic Random Access Memory) peripheral circuit makes this sense capacitance and this reference capacitance carry out electric charge and shares more in order to receive one second voltage, again with the voltage output after stable in each capacitance sensing unit.
37. capacitance type fingerprint access chip as claimed in claim 36 is characterized in that: this each capacitance sensing unit also comprises:
One sensor construction comprises:
One sensing electrode forms this sense capacitance with finger and this insulating surface;
One reference electrode, and form this reference capacitance with this sensing electrode and this reference electrode; And
One insulation course is disposed between this sensing electrode and this reference electrode; And
One signal read circuits is disposed at by this sensor construction, in order to connect this sensor construction and adjacent this character line and this bit line.
38. capacitance type fingerprint access chip as claimed in claim 37 is characterized in that: this signal read circuits also comprises:
One shutter release connects this sense capacitance and this reference capacitance controlling being connected of this sense capacitance and this reference capacitance, opens the moment of closing immediately at it and can make and carry out electric charge between this sense capacitance and this reference capacitance and share; And
One N type MOS source follower, be connected to this shutter release and this sense capacitance and this reference capacitance one of them with isolated lead stray capacitance, the balanced voltage coupling output after sense capacitance and reference capacitance shared.
39. capacitance type fingerprint access chip as claimed in claim 38 is characterized in that: such dynamic RAM peripheral circuit also comprises:
One comparer is connected to this row multiplexer, in order to the output binary message.
40. capacitance type fingerprint access chip as claimed in claim 38 is characterized in that:
Such dynamic RAM peripheral circuit also comprises:
One analog/digital converter is connected to this row multiplexer, in order to output gray level information.
41. capacitance type fingerprint access chip as claimed in claim 36 is characterized in that: this capacitance type fingerprint access chip also comprises:
One crooked strip metallic film is disposed on this insulating surface, in order to be connected to a heating power supply or an earthing power supply, to remove aqueous vapor or to prevent electrostatic breakdown; Wherein, be connected system by this trigger switch control between this bending strip metallic film and this heating power supply or this earthing power supply.
42. capacitance type fingerprint access chip as claimed in claim 36 is characterized in that: this trigger switch comprises:
One trigger electrode;
One triggers dielectric layer, is disposed on this trigger electrode; And
One triggers phase inverter; Wherein, when this trigger switch of finger contact, finger surface can form one with this trigger electrode and trigger electric capacity, this triggering electric capacity can carry out electric charge with the storage capacitors under this trigger electrode and share, one voltage of this trigger electrode of flowing through is descended and be lower than the reverse voltage of this triggering phase inverter, to open the power supply of this capacitance type fingerprint access chip.
43. capacitance type fingerprint access chip as claimed in claim 37 is characterized in that: this sensing electrode is to be made by last one metal level of CMOS (Complementary Metal Oxide Semiconductor) integrated circuit technology.
44. capacitance type fingerprint access chip as claimed in claim 42 is characterized in that: this trigger electrode is to be made by last one metal level of CMOS (Complementary Metal Oxide Semiconductor) integrated circuit technology.
45. capacitance type fingerprint access chip as claimed in claim 36 is characterized in that: this insulating surface is to be made by last pipe protection dielectric layer of CMOS (Complementary Metal Oxide Semiconductor) integrated circuit technology.
46. capacitance type fingerprint access chip as claimed in claim 45 is characterized in that: it is smooth also to comprise one deck barium titanate, strontium titanates, silit or oxidation on this insulating surface.
47. capacitance type fingerprint access chip as claimed in claim 46 is characterized in that: the smooth thickness of this layer barium titanate, strontium titanates, silit or oxidation is 0.5 to 2 micron.
48. capacitance type fingerprint access chip as claimed in claim 42 is characterized in that: this triggering dielectric layer is to be made by last pipe protection dielectric layer of CMOS (Complementary Metal Oxide Semiconductor) integrated circuit technology.
49. capacitance type fingerprint access chip as claimed in claim 48 is characterized in that: it is smooth also to comprise one deck barium titanate, strontium titanates, silit or oxidation on this triggering dielectric layer.
50. capacitance type fingerprint access chip as claimed in claim 49 is characterized in that: the smooth thickness of this layer barium titanate, strontium titanates, silit or oxidation is 0.5 to 2 micron.
51. capacitance type fingerprint access chip as claimed in claim 36 is characterized in that: this capacitance type fingerprint access chip is to utilize integrated circuit technology to be made.
52. capacitance type fingerprint access chip as claimed in claim 51 is characterized in that: this capacitance type fingerprint access chip is to utilize CMOS (Complementary Metal Oxide Semiconductor) technology to be made.
CN 02105960 2002-04-10 2002-04-10 Capacitance type fingerprint access chip CN1212588C (en)

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