CN1212514A - Semiconductor diode with polynomial volt-ampere characteristic - Google Patents
Semiconductor diode with polynomial volt-ampere characteristic Download PDFInfo
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- CN1212514A CN1212514A CN 97114251 CN97114251A CN1212514A CN 1212514 A CN1212514 A CN 1212514A CN 97114251 CN97114251 CN 97114251 CN 97114251 A CN97114251 A CN 97114251A CN 1212514 A CN1212514 A CN 1212514A
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- switch
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- analog multiplier
- feedback loop
- multiplication
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Abstract
The present invention relates to a semiconductor diode with polynomial v-i characteristics. Its circuit is made up by using several analog multipliers, switches and feedback resistors, and adopting circuit synthesis design method. By controlling on-off of different switches said invention can be made into the diodes respectively possessing accurate second power, third power, fourth power, fifth power and their different combination formed polynomial nonlinear v-i characteristics. Said invention can be used in the field of wave and frequency conversion of electric signal in the communication and electronic system.
Description
The invention belongs to semiconductor diode device with the design of circuit integrated approach.
Existing p-n junction N-type semiconductor N diode, its typical v-i (volt-ampere) characteristic are by following index law function representation:
I=I
S(exp (v/v
T)-1) I in the formula
SBe the constant of a microampere order of magnitude, represent the reverse saturation current of this device, v
T=KT/q is called thermal voltage, and wherein q is the quantity of electric charge of an electronics, and K is a Boltzmann constant, and T is to be the temperature of unit with the degrees Fahrenheit.Under the room temperature situation, v
TBe about 0.026 volt.This p-n junction semiconductor diode is produced through a whole set of complicated semiconductor fabrication process such as overdoping, extension, diffusion, cutting, encapsulation with monocrystalline silicon or germanium material.Usually, the main application of p-n junction semiconductor diode is waveform or the frequency translation that is used for the signal of telecommunication in electronic circuit and system engineering.In this case, because above-mentioned index law expansion of a function formula is infinite series, that is: an e
v=1+v+v
2/ 2! + v
3/ 3! + ..., therefore, the signal of telecommunication of a certain frequency will correspondingly comprise direct current, first-harmonic, second harmonic, triple-frequency harmonics and other high order harmonic component composition through after the conversion of this diode.In engineering, the signal of this spectrum component complexity must be through using after the unnecessary spectrum component of suitable filter circuit filtering, and this will make the design of circuit become complicated undoubtedly, and the cost of equipment increases, and reliability reduces.
The objective of the invention is at the existing the problems referred to above of existing semiconductor diode, propose a kind of with circuit integrated approach design can flexible combination become to have accurate square, cube, the semiconductor diode of biquadratic, five powers and the non-linear v-i characteristic of multinomial that constitutes by the various combination of these powers.
Purpose of the present invention is achieved by following execution mode:
Fig. 1 is the circuit block diagram of execution mode.
The design of circuit block diagram shown in Figure 1 comprises four analog multipliers, five switches and five resistance; Two multiplication input (X of analog multiplier 1
11, Y
11) with the analog multiplier 2,3 and 4 the first multiplication input (X
21, X
31And X
41) link together as one of them utmost point a of described semiconductor diode; Output (the W of analog multiplier 1
1) tell two-way, lead up to by resistance R and switch S
1aThe feedback loop that constitutes is connected to its multiplication input (X
11And Y
11), another road is connected to second multiplication input (Y of analog multiplier 2
21); Addition input (the Z of analog multiplier 1
1) be connected to one and S
1aThe switch S of interlock
1b, work as switch S
1aWhen connecting feedback loop, switch S
1bWith addition input (Z
1) and its two multiplication input (X
11And Y
11) link to each other, work as switch S
1aWhen disconnecting feedback loop, switch S
1bWith addition input (Z
1) and its common port (X
12And Y
12) link to each other; Output (the W of analog multiplier 2
2) tell two-way, lead up to by resistance R and switch S
2aThe feedback loop that constitutes is connected to its first input (X
21), another road is connected to second input (Y of analog multiplier 3
31); Addition input (the Z of analog multiplier 2
2) be connected to one and S
2aThe switch S of interlock
2b, work as switch S
2aWhen disconnecting feedback loop, switch S
2bWith addition input (Z
2) and its common port (X
22And Y
22) link to each other, work as switch S
2aWhen connecting feedback loop, switch S
2bWith addition input (Z
2) and its first input end (X
21) link to each other; Output (the W of analog multiplier 3
3) tell two-way, lead up to by resistance R and switch S
3aThe feedback loop that constitutes is connected to its first input (X
31), another road is connected to second input (Y of analog multiplier 4
41); Addition input (the Z of analog multiplier 3
3) be connected to one and switch S
3aThe switch S of interlock
3b, work as switch S
3aWhen disconnecting feedback loop, switch S
3bWith addition input (Z
3) and its common port (X
32And Y
32) link to each other, work as switch S
3aWhen connecting feedback loop, switch S
3bWith addition input (Z
3) and its first input end (X
31) link to each other; Addition input (the Z of analog multiplier 4
4) be connected to its first input (X
41), its output (W
4) pass through by resistance R and switch S
4The feedback loop that constitutes also is connected to its first input (X
41); Each common port (X of above-mentioned four analog multipliers
12, Y
12, X
22, Y
22, X
32, Y
4, X
42, and Y
42) link together as another utmost point b of described semiconductor diode.In addition, a, the b at diode passes through switch S between the two poles of the earth
5Connect a resistance R, be used to constitute the polynomial linear term of its v-i characteristic.
In foregoing circuit, have accurate square respectively by controlling the break-make of different switches, can forming, cube, the semiconductor diode of biquadratic, five powers and the non-linear v-i characteristic of multinomial that constitutes by the various combination of these powers, as shown in table 1.When this semiconductor diode of application carries out the waveform or frequency translation of voltage signal, the harmonic components that the user can comprise according to the signal demand after the conversion, set corresponding on off state according to table 1, make this diode have the non-linear v-i characteristic of multinomial of corresponding power time, thus save when adopting existing diode to carry out this conversion for the unwanted harmonic components of filtering the filter circuit of requisite complexity.
Semiconductor diode provided by the present invention, having can be by the non-linear v-i characteristic of the multinomial that the user makes up voluntarily, the design of application circuit integrated approach, both can constitute the device of element circuit form with discrete component, also can produce the device of integrated circuit form with integrated circuit fabrication process, be a kind of electronic device of novelty.
Table 1. constitutes different powers or multinomial v-i characteristic by switch control
The table of comparisons of semiconductor diode
S
5 S
1a S
2a S
3a S
4 i=
The disconnected absolutely v/R of break-make
Open close disconnected absolutely v
2/ R
The disconnected v of break-make absolutely
3/ R
Open close absolutely disconnected v
4/ R
Logical absolutely v
5/ R
Disconnected absolutely all v/R+v
2/ R
The disconnected v/R+2v of break-make all
2/ R+v
3/ R
Continuous table 1.
S
5 S
1a S
2a S
3a S
4 i=
Disconnected all v/R+3v
2/ R+2v
3/ R+v
4/ R
Logical all v/R+4v
2/ R+3v
3/ R+2v
4/ R+v
5/ R
Open close absolutely logical v
2/ R+v
4/ R+v
5/ R
Disconnected all absolutely v
2/ R+v
3/ R+v
4/ R
Break-make is led to 2v absolutely
3/ R+v
5/ R
Logical all absolutely 2v
2/ R+2v
3/ R+v
4/ R+v
5/ R
Above-mentioned each analog multiplier end pin is pressed following rule numbers:
X
M1, Y
M1Be multiplication input (wherein m is the numbering of analog multiplier, and is as follows);
X
M2, Y
M2Be common port;
Z
mBe the addition input;
W
mBe output.
As X
11, Y
11Be two multiplication inputs of analog multiplier 1, X
22, Y
22Be the common port of analog multiplier 2, Z
3Be the addition input of analog multiplier 3, W
4Be the output of analog multiplier 4, by that analogy.
Claims (3)
1. the semiconductor diode with polynomial volt-ampere characteristic that designs with the circuit integrated approach is characterized in that its circuit comprises four analog multipliers, five switches and five resistance; Two multiplication input (X of analog multiplier 1
11, Y
11) with the analog multiplier 2,3 and 4 the first multiplication input (X
21, X
31And X
41) link together as one of them utmost point a of described semiconductor diode; Output (the W of analog multiplier 1
1) tell two-way, lead up to by resistance R and switch S
1aThe feedback loop that constitutes is connected to its multiplication input (X
11And Y
11), another road is connected to second multiplication input (Y of analog multiplier 2
21); Addition input (the Z of analog multiplier 1
1) be connected to one and S
1aThe switch S of interlock
1b, work as switch S
1aWhen connecting feedback loop, switch S
1bWith addition input (Z
1) and its two multiplication input (X
11And Y
11) link to each other, work as switch S
1aWhen disconnecting feedback loop, switch S
1bWith addition input (Z
1) and its common port (X
12And Y
12) link to each other; Output (the W of analog multiplier 2
2) tell two-way, lead up to by resistance R and switch S
2aThe feedback loop that constitutes is connected to its first multiplication input (X
21), another road is connected to second multiplication input (Y of analog multiplier 3
31); Addition input (the Z of analog multiplier 2
2) be connected to one and S
2aThe switch S of interlock
2b, work as switch S
2aWhen disconnecting feedback loop, switch S
2bWith addition input (Z
2) and its common port (X
22And Y
22) link to each other, work as switch S
2aWhen connecting feedback loop, switch S
2bWith addition input (Z
2) and its first multiplication input (X
21) link to each other; Output (the W of analog multiplier 3
3) tell two-way, lead up to by resistance R and switch S
3aThe feedback loop that constitutes is connected to its first multiplication input (X
31), another road is connected to second multiplication input (Y of analog multiplier 4
41); Addition input (the Z of analog multiplier 3
3) be connected to one and switch S
3aThe switch S of interlock
3b, work as switch S
3aWhen disconnecting feedback loop, switch S
3bWith addition input (Z
3) and its common port (X
32And Y
32) link to each other, work as switch S
3aWhen connecting feedback loop, switch S
3bWith addition input (Z
3) and its first multiplication input (X
31) link to each other; Addition input (the Z of analog multiplier 4
4) be connected to its first multiplication input (X
41), its output (W
4) pass through by resistance R and switch S
4The feedback loop that constitutes also is connected to its first multiplication input (X
41); Each common port (X of above-mentioned four analog multipliers
12, Y
12, X
22, Y
22, X
32, Y
32, X
42And Y
42) link together as another utmost point b of described semiconductor diode; Pass through switch S at a, b between the two poles of the earth
5Connect a resistance R.
2. the semiconductor diode with multinomial v-i characteristic according to claim 1 and 2 is characterized in that this device is the device of the element circuit form of discrete component formation.
3. the semiconductor diode with multinomial v-i characteristic according to claim 1 and 2 is characterized in that this device is the device of integrated circuit form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97114251 CN1212514A (en) | 1997-09-19 | 1997-09-19 | Semiconductor diode with polynomial volt-ampere characteristic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97114251 CN1212514A (en) | 1997-09-19 | 1997-09-19 | Semiconductor diode with polynomial volt-ampere characteristic |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1212514A true CN1212514A (en) | 1999-03-31 |
Family
ID=5172825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 97114251 Pending CN1212514A (en) | 1997-09-19 | 1997-09-19 | Semiconductor diode with polynomial volt-ampere characteristic |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1212514A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102158196A (en) * | 2010-12-24 | 2011-08-17 | 南京大学 | Sine and cosine transfer circuit of electrical signals and phase-shifting circuit |
-
1997
- 1997-09-19 CN CN 97114251 patent/CN1212514A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102158196A (en) * | 2010-12-24 | 2011-08-17 | 南京大学 | Sine and cosine transfer circuit of electrical signals and phase-shifting circuit |
| CN102158196B (en) * | 2010-12-24 | 2013-08-14 | 南京大学 | Sine and cosine transfer circuit of electrical signals and phase-shifting circuit |
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