CN1205113C - 量子计算机的硅基片上的单分子阵列、其制备方法及采用该基片的量子计算机 - Google Patents
量子计算机的硅基片上的单分子阵列、其制备方法及采用该基片的量子计算机 Download PDFInfo
- Publication number
- CN1205113C CN1205113C CNB01814960XA CN01814960A CN1205113C CN 1205113 C CN1205113 C CN 1205113C CN B01814960X A CNB01814960X A CN B01814960XA CN 01814960 A CN01814960 A CN 01814960A CN 1205113 C CN1205113 C CN 1205113C
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- Prior art keywords
- hydrogen
- silicon
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- molecule
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 51
- 239000010703 silicon Substances 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 title claims abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 55
- 239000001257 hydrogen Substances 0.000 claims abstract description 54
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 52
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims abstract description 43
- 125000004429 atom Chemical group 0.000 claims abstract description 35
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 28
- 239000010410 layer Substances 0.000 claims description 19
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- 238000010521 absorption reaction Methods 0.000 claims description 17
- 238000003795 desorption Methods 0.000 claims description 17
- NTQGILPNLZZOJH-UHFFFAOYSA-N disilicon Chemical compound [Si]#[Si] NTQGILPNLZZOJH-UHFFFAOYSA-N 0.000 claims description 14
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 10
- 239000011241 protective layer Substances 0.000 claims description 10
- 239000002096 quantum dot Substances 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 9
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- 238000007872 degassing Methods 0.000 claims description 4
- 238000012544 monitoring process Methods 0.000 claims description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 4
- 230000005428 wave function Effects 0.000 claims description 3
- 230000002045 lasting effect Effects 0.000 claims 1
- 125000004437 phosphorous atom Chemical group 0.000 abstract description 16
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract description 6
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- 239000000523 sample Substances 0.000 description 26
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- 238000000034 method Methods 0.000 description 16
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 150000004678 hydrides Chemical class 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 235000021251 pulses Nutrition 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 8
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- 230000004888 barrier function Effects 0.000 description 6
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- 239000000377 silicon dioxide Substances 0.000 description 6
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
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- 238000009413 insulation Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
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- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
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- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
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- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
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- 238000001179 sorption measurement Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
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- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
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- 229920006395 saturated elastomer Polymers 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 150000003378 silver Chemical group 0.000 description 1
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- 241000894007 species Species 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- 238000006557 surface reaction Methods 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7613—Single electron transistors; Coulomb blockade devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q80/00—Applications, other than SPM, of scanning-probe techniques
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Ceramic Engineering (AREA)
- Evolutionary Computation (AREA)
- General Engineering & Computer Science (AREA)
- Computational Mathematics (AREA)
- Mathematical Analysis (AREA)
- Mathematical Optimization (AREA)
- Pure & Applied Mathematics (AREA)
- Computing Systems (AREA)
- Data Mining & Analysis (AREA)
- Mathematical Physics (AREA)
- Software Systems (AREA)
- Artificial Intelligence (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AUPQ9759 | 2000-08-30 | ||
AUPQ9759A AUPQ975900A0 (en) | 2000-08-30 | 2000-08-30 | A process for the fabrication of a quantum computer |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1449359A CN1449359A (zh) | 2003-10-15 |
CN1205113C true CN1205113C (zh) | 2005-06-08 |
Family
ID=3823813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB01814960XA Expired - Lifetime CN1205113C (zh) | 2000-08-30 | 2001-08-24 | 量子计算机的硅基片上的单分子阵列、其制备方法及采用该基片的量子计算机 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7061008B2 (zh) |
EP (1) | EP1315667A1 (zh) |
JP (1) | JP2004506532A (zh) |
CN (1) | CN1205113C (zh) |
AU (1) | AUPQ975900A0 (zh) |
WO (1) | WO2002018266A1 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6878417B2 (en) * | 1997-11-12 | 2005-04-12 | John C. Polanyi | Method of molecular-scale pattern imprinting at surfaces |
AUPR728901A0 (en) | 2001-08-27 | 2001-09-20 | Unisearch Limited | Method and system for introducing an ion into a substrate |
EP1436844B1 (en) * | 2001-09-05 | 2016-03-23 | Rensselaer Polytechnic Institute | Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles |
KR20060007372A (ko) * | 2003-03-06 | 2006-01-24 | 렌슬러 폴리테크닉 인스티튜트 | 실온에서 벌크 고체로부터 나노입자를 고속 발생시키는방법 |
US7547648B2 (en) * | 2003-08-20 | 2009-06-16 | Qucor Pty Ltd | Fabricating nanoscale and atomic scale devices |
US7321884B2 (en) * | 2004-02-23 | 2008-01-22 | International Business Machines Corporation | Method and structure to isolate a qubit from the environment |
JP4773101B2 (ja) * | 2005-01-12 | 2011-09-14 | 株式会社日立製作所 | 半導体装置の製造方法 |
JP2006239843A (ja) * | 2005-03-04 | 2006-09-14 | Fujitsu Ltd | 半導体装置の製造方法及び半導体装置 |
EP1905064A2 (en) * | 2005-06-24 | 2008-04-02 | Applied Nanoworks, Inc. | Nanoparticles and method of making thereof |
US20080245769A1 (en) * | 2006-07-17 | 2008-10-09 | Applied Nanoworks, Inc. | Nanoparticles and method of making thereof |
KR101619292B1 (ko) | 2008-06-17 | 2016-05-10 | 내셔날 리서치 카운실 오브 캐나다 | 원자 양자점 |
US10147865B1 (en) | 2013-08-12 | 2018-12-04 | The United States Of America As Represented By The Director Of The National Security Agency | Epitaxial superconducting devices and method of forming same |
US10929769B2 (en) | 2016-06-08 | 2021-02-23 | Socpra Sciences Et Génie S.E.C. | Electronic circuit for control or coupling of single charges or spins and methods therefor |
US11047877B2 (en) | 2017-09-28 | 2021-06-29 | Quantum Silicon Inc. | Initiating and monitoring the evolution of single electrons within atom-defined structures |
KR102637697B1 (ko) | 2018-05-02 | 2024-02-19 | 실리콘 퀀텀 컴퓨팅 피티와이 리미티드 | 반도체 표면에 도펀트 원자를 선택적으로 통합하는 방법 |
US10983142B2 (en) * | 2018-10-24 | 2021-04-20 | Zyvex Labs, Llc | Depassivation lithography by scanning tunneling microscopy |
KR20210127167A (ko) * | 2019-02-15 | 2021-10-21 | 퀀텀 실리콘 인코포레이티드 | 자동화된 원자 크기 제작 |
CN116654618B (zh) * | 2023-07-24 | 2023-09-29 | 济南华自达电子设备有限公司 | 一种电路板上料装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5861254A (en) * | 1997-01-31 | 1999-01-19 | Nexstar Pharmaceuticals, Inc. | Flow cell SELEX |
JP3048749B2 (ja) * | 1992-04-28 | 2000-06-05 | キヤノン株式会社 | 薄膜形成方法 |
EP0634797B1 (en) * | 1993-07-13 | 1999-09-22 | Sony Corporation | Thin film semiconductor device for active matrix panel and method of manufacturing the same |
EP0815121A4 (en) * | 1995-02-09 | 1999-09-01 | Univ Washington | MODIFIED AFFINITY STREPTAVIDINE |
JP2833545B2 (ja) * | 1995-03-06 | 1998-12-09 | 日本電気株式会社 | 半導体装置の製造方法 |
US5990373A (en) * | 1996-08-20 | 1999-11-23 | Kansas State University Research Foundation | Nanometer sized metal oxide particles for ambient temperature adsorption of toxic chemicals |
AUPO926897A0 (en) * | 1997-09-17 | 1997-10-09 | Unisearch Limited | Quantum computer |
JP2000021892A (ja) * | 1998-06-26 | 2000-01-21 | Nec Corp | 半導体装置の製造方法 |
JP3242901B2 (ja) * | 1999-06-18 | 2001-12-25 | 日本エー・エス・エム株式会社 | 半導体形成方法及び装置 |
US6492283B2 (en) * | 2000-02-22 | 2002-12-10 | Asm Microchemistry Oy | Method of forming ultrathin oxide layer |
AUPQ980700A0 (en) * | 2000-08-31 | 2000-09-21 | Unisearch Limited | Fabrication of nanoelectronic circuits |
AUPR728901A0 (en) * | 2001-08-27 | 2001-09-20 | Unisearch Limited | Method and system for introducing an ion into a substrate |
US7018852B2 (en) * | 2002-08-01 | 2006-03-28 | D-Wave Systems, Inc. | Methods for single qubit gate teleportation |
US7364923B2 (en) * | 2003-03-03 | 2008-04-29 | The Governing Council Of The University Of Toronto | Dressed qubits |
-
2000
- 2000-08-30 AU AUPQ9759A patent/AUPQ975900A0/en not_active Abandoned
-
2001
- 2001-08-24 WO PCT/AU2001/001057 patent/WO2002018266A1/en active IP Right Grant
- 2001-08-24 EP EP01959978A patent/EP1315667A1/en not_active Withdrawn
- 2001-08-24 JP JP2002523392A patent/JP2004506532A/ja active Pending
- 2001-08-24 CN CNB01814960XA patent/CN1205113C/zh not_active Expired - Lifetime
- 2001-08-24 US US10/362,821 patent/US7061008B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
AUPQ975900A0 (en) | 2000-09-21 |
US7061008B2 (en) | 2006-06-13 |
WO2002018266A8 (en) | 2003-01-03 |
US20040023519A1 (en) | 2004-02-05 |
JP2004506532A (ja) | 2004-03-04 |
EP1315667A1 (en) | 2003-06-04 |
WO2002018266A1 (en) | 2002-03-07 |
CN1449359A (zh) | 2003-10-15 |
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