CN1204605C - Method for forming low dielectric constant material and product thereof - Google Patents
Method for forming low dielectric constant material and product thereof Download PDFInfo
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- CN1204605C CN1204605C CN 02124343 CN02124343A CN1204605C CN 1204605 C CN1204605 C CN 1204605C CN 02124343 CN02124343 CN 02124343 CN 02124343 A CN02124343 A CN 02124343A CN 1204605 C CN1204605 C CN 1204605C
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Abstract
The present invention relates to a method for forming materials with low dielectric constant, which comprises the following steps: firstly, providing a semiconductor substrate which forms a plurality of semiconductor elements and placing the semiconductor substrate in a reaction chamber; then, providing mixes gases of silicon-oxygen gases, carbon-hydrogen gases and gases containing oxygen in the reaction chamber in order to form a material layer with low dielectric constant; subsequently, processing the material layer with low dielectric constant by hardening electronic slurry. The present invention can reduce parasitic capacitance of metal inner connection lines and improve the phenomenon of RC delay, and the transmission rate of the elements is effectively increased. In addition, characteristics of stress and shock resistance are reduced, so cracks generating by stacking a plurality of layers of dielectric materials are further prevented.
Description
Technical field
The present invention relates to a kind of manufacture method of semi-conducting material, particularly a kind of advanced low-k materials that forms the method for advanced low-k materials and utilize the method manufacturing.
Background technology
The making of semiconductor integrated circuit is extremely complicated manufacturing process, and its purpose is various electronic components and circuit that particular electrical circuit is required, dwindles on the substrate that is produced on small size.Wherein, each element must effectively be isolated on the substrate, but must utilize the proper metal lead to electrically connect, and the side is brought into play desired function, and this manufacturing process is commonly referred to as metallization manufacturing process.Except making each layer metal conductive line pattern, and by contact hole (contact/via) structure, and as between element contact zone and the plain conductor, or the passage of getting in touch between the multiple layer metal lead.In recent years, development along with the component size downsizing, not only the lead technology of the copper product that applying conductive is higher is in the ascendant, for the effectively RC delay of parasitic capacitance and element between the reduction plain conductor, many manufacturing process are also used the dielectric materials layer with low-k (low-k) gradually instead, replace general dielectric material and as dielectric layer between metal layers (inter-metal dielectric; IMD).
For the RC that reduces parasitic capacitance between lead (parasitic capacitance) and element effectively postpones, the manufacturing process of intraconnections is used the have low-k organic dielectric materials etc. of (for example k=2.5-3.0) gradually, replace materials (k for example is more than 4) such as traditional silicon dioxide and silicon nitride, above-mentioned organic dielectric materials for example is to stretch aromatic radical ether polymer (poly (arylene ether) polymer).
The dielectric constant of traditional dielectric material (silica) is about 4.2, all dielectric constant can be reduced with organic material or inorganic material.Organic material such as FLARE (Allied Signal produces), PAE-2 (Schumacher produces) can the rotary coating mode finish.And inorganic is finished in the chemical vapor deposition (CVD) mode haply, for example fluorine glass (FSG).Recently, utilizing methyl-monosilane (methyl silane) is the low-dielectric constant layer (SiO that unstrpped gas deposited
x(CH
3)
3-xBD), dielectric constant values is 2.0-2.7 only, is one of present important materials that develops low-dielectric constant layer.Yet the character of this kind material is also unstable, and its dielectric constant values is subjected to the influence of aqueous vapor and chemical attack (as etching, dedust) easily and rises.
Ravi is in United States Patent (USP) 5,807, and 785 illustrate a kind of silicon dioxide sandwich layer that is used for filling out between metal wire ditch (gap filling).At first, utilize the plasma-assisted chemical vapour deposition (PECVD) of silicon tetraethyl silicate (TEOS) and fluorochemical to form barrier layer.(subatmospheric CVD is SACVD) to form a trench fill layer then to utilize the inferior aumospheric pressure cvd of TEOS.Adjust two-layer thickness and be similar to 3.6-3.7 to reach overall dielectric constant.
In addition, recently aerogel, xerogel, nanoglass etc. contain glass (silicon dioxide) material in fine porous crack (tiny porosity), for example in silicon dioxide, mix carbon and hydrogen, also being taken as advanced low-k materials uses, its parasitic capacitance and RC that can reduce between the metal interconnecting postpones, and then the efficiency of transmission between the lift elements.
In addition, please refer to Fig. 1 a-Fig. 1 b, Fig. 1 a is the sectional drawing at the common semiconductor-based end that is formed with advanced low-k materials, and Fig. 1 b is the common sectional drawing that forms copper interconnects on the semiconductor-based end of advanced low-k materials.
Please refer to Fig. 1 a, at first, the semiconductor-based end 101 is moved among the reinforced chemical vapor deposition reaction chamber of plasma; Then, supply with nitrous oxide (N
2O), silicomethane (SiH
4), trimethyl silane ((CH
3)
3SiH) in above-mentioned chemical vapor deposition reaction chamber, and the radio-frequency power supply that about 75W, 30-60 second is provided under the temperature of 17-400 degree Celsius is in chemical vapor deposition reaction chamber.Thus, promptly on the surface at the semiconductor-based end 101, form the low dielectric constant material layer 102 that a porous silica that is mixed with carbon (C) and hydrogen (H) constitutes.Wherein, be formed with the copper metal interconnecting (not shown) of several semiconductor element (not shown) and several layers at semiconductor-based the end 101.
Please refer to Fig. 1 b, utilize traditional little shadow manufacturing process and etching step with selectivity eating thrown low dielectric constant material layer 102 to form mosaic groove 103, utilize electrochemical deposition to form the copper metal then, carry out the planarization of copper metal to form copper interconnects 104 with chemical mechanical milling method at last.
Because being the multilayer dielectric material by the damascene copper lead, the manufacturing process of multiple internal connecting lines constitutes, the result of this multiple-level stack causes the be full of cracks ck of porous crack advanced low-k materials easily, and be easy to generate charge effect (charglng effect) and cause leakage current, higher (for example-76V) being confirmed of the flat band voltage that this phenomenon is measured by the C-V analyzer (flat band voltage).This is because the continuity radio-frequency power supply is provided, and makes that the fine hole of advanced low-k materials mostly is a continuity.
Therefore, for the application that makes this kind material is more reached perfection, be necessary to seek the road of improvement in fact at the problems referred to above.
Summary of the invention
The object of the present invention is to provide a kind of material and manufacture method thereof of low-k, allow to reduce the parasitic capacitance of metal interconnecting and improve the RC delay phenomenon, the transmission rate of effective lift elements, and reduce stress (stress) and shock-resistant characteristic, and then prevent that multilayer dielectric material from piling up the be full of cracks of generation.
According to above-mentioned purpose, the invention provides a kind of method that forms advanced low-k materials, comprise the following steps: to provide the semiconductor substrate, the semiconductor-based end, be formed with the several semiconductor element; To partly lead substrate and place a chemical vapor deposition reaction chamber; Provide the mist of a silica gas, hydrocarbon gas and oxygen-containing gas heavy to form the silicon dioxide layer of a doping carbon and hydrogen in reaction; The silicon dioxide layer that reaches doping carbon and hydrogen carries out the plasma cure processing.
According to above-mentioned purpose, the present invention provides a kind of method that forms advanced low-k materials again, comprises the following steps: to provide the semiconductor substrate, and the semiconductor-based end is formed with the several semiconductor element; To partly lead substrate and place the reinforced chemical vapor deposition reaction chamber of a plasma; To form the silicon dioxide layer of a doping carbon and hydrogen, the temperature of the reinforced chemical vapor deposition reaction chamber of its ionic medium is a 0-500 degree Celsius to the mist that one prestox tetrasiloxane, ethene and oxygen is provided in the reinforced chemical vapor deposition reaction chamber of plasma; And the silicon dioxide layer of doping carbon and hydrogen is carried out cure process with the hydrogen plasma.
According to above-mentioned purpose, the present invention more provides a kind of advanced low-k materials, is formed by the following step: the semiconductor substrate is provided, and the semiconductor-based end, be formed with the several semiconductor element; To partly lead substrate and place a chemical vapor deposition reaction chamber; The mist that one silica gas, hydrocarbon gas and oxygen-containing gas be provided in reative cell to form the silicon dioxide layer of a doping carbon and hydrogen; The silicon dioxide layer that reaches doping carbon and hydrogen carries out the plasma cure processing.
According to above-mentioned purpose, the present invention provides a kind of advanced low-k materials in addition, is formed by the following step: the semiconductor substrate is provided, and the semiconductor-based end, be formed with the several semiconductor element; To partly lead substrate and place the reinforced chemical vapor deposition reaction chamber of a plasma; To form a low dielectric constant material layer, the temperature of the reinforced chemical vapor deposition reaction chamber of its ionic medium is a 0-500 degree Celsius to the mist that one prestox tetrasiloxane, ethene and oxygen is provided in the reinforced chemical vapor deposition reaction chamber of plasma; And low dielectric constant material layer is carried out cure process with argon plasma.
For above-mentioned and other purposes of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 a is the common sectional drawing that is formed with the semiconductor-based end of advanced low-k materials;
Fig. 1 b is common in the sectional drawing that forms copper interconnects at the semiconductor-based end of advanced low-k materials;
Fig. 2 a-Fig. 2 b is the schematic flow sheet of the method for formation advanced low-k materials of the present invention;
Fig. 2 c is the sectional drawing that utilizes the copper interconnects of the made advanced low-k materials formation of the present invention.
Embodiment
Please refer to Fig. 2 a-Fig. 2 b, Fig. 2 a-Fig. 2 b is the schematic flow sheet of the method for formation advanced low-k materials of the present invention.
Please refer to Fig. 2 a, at first, provide semiconductor substrate 201, the semiconductor-based end 201 is moved to the reinforced chemical vapour deposition (CVD) of plasma (plasma enhanced chemical vapor deposition; PECVD) in the reative cell (chamber).Wherein, can be formed with any required semiconductor element (not shown) and copper metal interconnecting (not shown), for example MOS or logical circuit etc. at semiconductor-based the end 201; The semiconductor-based end 201 for example is a silicon base.
Then, provide a mist, mist is made up of silica gas, hydrocarbon gas and oxygen-containing gas.Mist is supplied in the reinforced chemical vapor deposition reaction chamber of this plasma, and the temperature of the reinforced chemical vapor deposition reaction chamber of plasma is set between the 0-500 degree Celsius.
Mist in the reinforced chemical vapor deposition reaction chamber of plasma with the semiconductor-based ends 201 reaction after, promptly on the surface at the semiconductor-based end 201, form the low dielectric constant material layer 202 that porous silica that one deck is mixed with carbon (C) and hydrogen (H) constitutes; And the dielectric constant of low dielectric constant material layer 202 is about 2.4-2.6.Wherein, silica gas for example is prestox tetrasiloxane (OMCTsoctamethylcyclotetrakissiloxane,), tetramethyl tetrasiloxane (TMCTstetramethylcyclotetrakissiloxane), trimethyl silane gas or tetramethylsilane gas etc.; Hydrocarbon gas for example is ethene (C
2H
4), acetylene (C
2H
2), ethane (C
2H
6Or methane (CH
4) etc.; Oxygen-containing gas for example is oxygen (O
2), ozone (O
3), carbon monoxide (CO), carbon dioxide (CO
2) and aqueous vapor (H
2O) etc.; Vector gas for example is neon (Ne) or argon gas (Ar).
The mist that this kind reacts semiconductor substrate 201 in the reinforced chemical vapor deposition reaction chamber of plasma, wherein the mist of being formed with prestox tetrasiloxane, ethene and oxygen is the best.
Please refer to Fig. 2 b, the temperature of the reinforced chemical vapor deposition reaction chamber of plasma maintains between the 0-500 degree Celsius equally, then, with the hydrogen plasma low dielectric constant material layer 202 is carried out cure process.This one carries out the step of cure process with the hydrogen plasma to low dielectric constant material layer 202, will make the structure of low dielectric constant material layer 202 stable more and have an effect of reinforcement.
Please refer to Fig. 2 c, Fig. 2 c is the sectional drawing that utilizes the copper interconnects of the made advanced low-k materials formation of the present invention.
Utilize traditional little shadow manufacturing process and etching step with selectivity eating thrown low dielectric constant material layer 202 to form mosaic groove 203, utilize electrochemical deposition to form the copper metal then, carry out the planarization of copper metal to form copper interconnects 204 with chemical mechanical milling method at last.
Multiple internal connecting lines is that the multilayer dielectric material by the damascene copper lead constitutes, when the manufacturing process of the multiple internal connecting lines that carries out multiple lamination, the result that multilayer dielectric material is piled up by the made advanced low-k materials 202 of the present invention causes the be full of cracks of porousness advanced low-k materials, so be difficult for causing leakage current because of producing charge effect (charging effect).
Method according to formation advanced low-k materials provided by the present invention, the dielectric constant of the advanced low-k materials of manufacturing can reach 2.4-2.6, reduce many in comparison in fact with the dielectric constant 3.6-3.7 of common advanced low-k materials, the parasitic capacitance and the RC that can effectively reduce between the metal interconnecting postpone, and then the efficiency of transmission between the lift elements.The advanced low-k materials of manufacturing of the present invention has the favorable mechanical characteristic, and therefore the manufacturing process below 0.13 μ m can have good application.
Though the present invention with preferred embodiment openly as above, so it is not in order to qualification the present invention, and any those of ordinary skills without departing from the spirit and scope of the present invention, change when doing equivalence, all should belong to protection scope of the present invention.
Claims (10)
1. a method that forms advanced low-k materials is characterized in that it comprises the following steps:
The semiconductor substrate is provided, and this is partly led substrate places a chemical vapor deposition reaction chamber;
The mist that one silica gas, hydrocarbon gas and oxygen-containing gas are provided is in this reative cell, to form the silicon dioxide layer of a doping carbon and hydrogen; And
Silicon dioxide layer to this doping carbon and hydrogen carries out the plasma cure processing.
2. the method for formation advanced low-k materials as claimed in claim 1 is characterized in that described reative cell is the reinforced chemical vapor deposition reaction chamber of plasma.
3. the method for formation advanced low-k materials as claimed in claim 1, it is characterized in that described silica gas be prestox tetrasiloxane or tetramethyl tetrasiloxane one of them.
4. the method for formation advanced low-k materials as claimed in claim 1 is characterized in that described hydrocarbon gas is ethene, acetylene, ethane, methane, or two or more mixture among the ethene, acetylene, ethane, methane.
5. the method for formation advanced low-k materials as claimed in claim 1, it is characterized in that described oxygen-containing gas is oxygen, ozone, carbon monoxide, carbon dioxide, aqueous vapor, or two or more mixture among the oxygen, ozone, carbon monoxide, carbon dioxide, aqueous vapor.
6. the method for formation advanced low-k materials as claimed in claim 1, the temperature that it is characterized in that described reative cell are 0-500 degree Celsius.
7. the method for formation advanced low-k materials as claimed in claim 1 is characterized in that described plasma is the hydrogen plasma.
8. the method for formation advanced low-k materials as claimed in claim 1 is characterized in that the described semiconductor-based end is formed with semiconductor element; Described chemical vapor deposition reaction chamber is the reinforced chemical vapor deposition reaction chamber of plasma; And the mist that a prestox tetrasiloxane, ethene and oxygen are provided is in the reinforced chemical vapor deposition reaction chamber of this plasma, and wherein the temperature of this reative cell is a 0-500 degree Celsius; And the silicon dioxide layer of this doping carbon and hydrogen is carried out the hydrogen plasma cure handle.
9. an advanced low-k materials is characterized in that, this material is formed by the following step:
The semiconductor substrate is provided, and the semiconductor-based end, be formed with the several semiconductor element;
Should place a chemical vapor deposition reaction chamber in the semiconductor-based end;
The mist that one silica gas, hydrocarbon gas and oxygen-containing gas are provided is in reative cell, to form the silicon dioxide layer of a doping carbon and hydrogen;
The silicon dioxide layer that reaches this doping carbon and hydrogen carries out the plasma cure processing.
10. advanced low-k materials as claimed in claim 9 is characterized in that, the described semiconductor-based end is formed with the several semiconductor element;
Described chemical vapor deposition reaction chamber is the reinforced chemical vapor deposition reaction chamber of plasma;
The mist that one prestox tetrasiloxane, ethene and oxygen are provided is in the reinforced chemical vapor deposition reaction chamber of plasma, and wherein the temperature of this reative cell is a 0-500 degree Celsius;
The silicon dioxide layer that reaches this doping carbon and hydrogen carries out the processing of hydrogen-oxygen plasma cure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02124343 CN1204605C (en) | 2002-06-19 | 2002-06-19 | Method for forming low dielectric constant material and product thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02124343 CN1204605C (en) | 2002-06-19 | 2002-06-19 | Method for forming low dielectric constant material and product thereof |
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| Publication Number | Publication Date |
|---|---|
| CN1464536A CN1464536A (en) | 2003-12-31 |
| CN1204605C true CN1204605C (en) | 2005-06-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02124343 Expired - Lifetime CN1204605C (en) | 2002-06-19 | 2002-06-19 | Method for forming low dielectric constant material and product thereof |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7422776B2 (en) * | 2004-08-24 | 2008-09-09 | Applied Materials, Inc. | Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD) |
| CN103794491B (en) * | 2012-10-29 | 2019-05-24 | 中芯国际集成电路制造(上海)有限公司 | A kind of production method of low-dielectric constant layer |
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2002
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