CN1199036A - Process for preparation of transparent aluminium nitride ceramic - Google Patents
Process for preparation of transparent aluminium nitride ceramic Download PDFInfo
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- CN1199036A CN1199036A CN 98110799 CN98110799A CN1199036A CN 1199036 A CN1199036 A CN 1199036A CN 98110799 CN98110799 CN 98110799 CN 98110799 A CN98110799 A CN 98110799A CN 1199036 A CN1199036 A CN 1199036A
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Abstract
A process for preparing transparent ceramic of aluminium nitride features that its powdered starting material (7-8 microns) is obtained by self-spreading, its sinter assistant is industrially pure calcium carbide (3 wt.%) or the industrially pure calcium carbide and rare-earth oxide-CaC2 (2-4 wt.%) + Re2O3 (1-3 wt.%), where Re is one of Y, Ce, Sm, Dy, Er, and Yb, and the process includes hot pressing, or not pressing or low-temp hot pressing, and high-temp thermal treatment. Obtained A1N ceramic has maxmal transmission rate greater than 60% for ultraviolet, visual and near infrared band and density up to 3.26 g/cu.cm.
Description
The invention relates to the Preparation of Translucent AlN Ceramics method, belong to the field of Non-oxide Transparent Ceramics.
Report first in the world from R.L.Coble in 1962 and successfully to prepare transparent alumina ceramic material (U.S.P.3026210), opened up the new Application Areas of stupalith.The fluorescent tube that the most successful is as high-pressure mercury lamp has obtained widespread use.Since then, many in the world research units and the production unit research and development of all being devoted to prepare new crystalline ceramics.Yet the preparation of transparent non-oxide ceramics is difficult more than oxide ceramics, and its major cause has two: the one, and the coking property that they are low; The 2nd, high foreign matter content, particularly oxygen level in the powder.So about the document of the preparation aspect of Non-oxide Transparent Ceramics material and patent than transparent oxide stupalith much less.
During the nearly last ten years, aluminium nitride ceramics (AlN) has become the important a member in the advanced ceramics because of its excellent comprehensive performance extensively is subjected to material scholar and engineering technical personnel's concern.Preparation of Translucent AlN Ceramics was had report from 1984.For example, the storehouse of day Bender mountain Cao Da (Tokuyama Soda) company unit letter row wait the people in 1984,1985 with the research paper of successively on relevant magazine, delivering transparent aluminium nitride ceramic in 1989.Especially (paper pp517-522) has studied the sintering process of light transmission AlN pottery and impurity in great detail to the influence of AlN sintered compact heat conductance, spells out AlN-Ca (NO for Vol.93, No.9 to be published in Japanese ceramic industry Xie Hui Chi in 1985
3)
2The normal pressure-sintered process of system is typical liquid phase sintering, and observes three processes: (1) 1300～1600 ℃ of AlN particle rearrangement under the liquid phase effect; Precipitation process and (3) 1800 ℃ of holding stage grain growings of dissolving of (2) 1600～1800 ℃ of AlN particulate and crystal grain, Ca content only is 120PPM in the transparent AlN pottery, the compound of the Ca that adds forms calcium aluminate liquid phase and volatilization gradually in sintering process, thereby make the sintered compact densification and effectively prevent oxonium ion to diffuse in the AlN crystal grain, make thermal conductivity improve.In view of moral mountain Cao Da company is one of important aluminium nitride powder supplier, storehouse unit letter row waits the people to highlight, the good multicrystal most important condition of AlN of preparation light transmission is that initial AlN powder must possess high purity, especially the foreign matter content of Si, Mg, Fe all should be lower than 200PPM, and oxygen level is wanted strict control, and particle size and distribution are all had strict requirement.In addition, must add a certain amount of auxiliary agent for reaching densified sintering product, the compound of the Ca that reports in the document is as Ca (NO
3)
2Or 3CaO2Al
2O
3Be SILVER REAGENT purity, these require all to be unfavorable for the practicability of transparent aluminium nitride ceramic, there is no the report of other relevant transparent aluminium nitride ceramics in for many years.
The object of the present invention is to provide new efficient cheap preparation method: (1) adopts the Ca compound of technical grade as sintering additive (or claiming auxiliary agent); (2) add rare earth oxide in addition simultaneously, enlarge it and select scope for use; (3) except that the high-purity AlN that selects carbothermic method preparation commonly used for use, can the AlN powder that adopt exploitation, that be suitable for industrialization, the mass production in recent years method that spreads certainly production as initial powder.
Aluminium nitride powder is easy to take place hydrolysis reaction, and the impurity oxygen of being introduced is very harmful to the performance of aluminium nitride.The research of current relevant aluminium nitride concentrates on and adds special additive at aluminium nitride crystal boundary zone formation aluminate compound, stops oxygen to AlN crystal grain internal divergence.The main additive that the present invention proposes to adopt is a technical grade carbide of calcium, and price is about 10 yuan/kilogram, though the report that uses carbide of calcium is abroad also arranged, but what use is the SILVER REAGENT product, its price per kilogram is the hundred times of industrial raw material more than 30000 yen, and very inconvenience of its accumulating.Adopt carbide of calcium can utilize itself and the easy reaction properties of water electrode, reduce in auxiliary material and the environment moisture significantly the detrimentally affect of AlN as additive.Measured data shows, is the AlN powder of 0.61wt% to original oxygen level, and oxygen level only raises and is 0.73wt% after adding additive, ball milling oven dry.
CaC
2Add-on be 3.0wt%, in addition, can also add CaC
2The time add Y
2O
3Or rare earth oxide, its add-on is 2～4wt%CaC
2+ 1～2wt%Re
2O
3(Re is one of Y, Ce, Sm, Dy, Er or Yb).The AlN powder that the present invention uses can be the high-purity ultra-fine aluminum nitride powder of the carbothermic method preparation used always, also can be by the powder of the mean particle size that spreads method production certainly at 7～8 μ m, the technology that adopts is hot-press method or pressureless sintering, or heat-treat at high temperature behind the hot pressed sintering at low temperatures, with further raising light transmission.Atmosphere is mobile N
2, N
2+ H
2Or N
2A kind of among the+Ar.
In heat pressing process, hot pressing sample elder generation forming of green body (pressure is generally 4MPa) is placed in the graphite jig of inwall coating BN then, and temperature rise rate is 20 ℃/min, in two stages pressurization: 1300～1400 ℃ of first pressurizations of beginning, and pressure is 10～15MPa; 1800 ℃ rise to 20～40MPa with pressure again, are incubated 4～8 hours.The pressureless sintering temperature is 1800～1850 ℃, atmosphere atmosphere during with hot pressing; When adopting behind the low temperature and pressure thermal treatment process, hot pressing temperature is 1500～1600 ℃ again, also pressurization in two stages, and sample is placed in plumbago crucible or the boron nitride crucible behind the hot pressed sintering, at mobile N
2Or N
2+ H
2Heat-treat in 1800～1900 ℃ under the atmosphere, temperature rise rate is 10 ℃/min, is incubated 15～40 hours, furnace cooling.
Characteristics of the present invention are conspicuous.The additive that uses is the technical grade CaC of cheapness
2And it is less demanding to its granularity; Adding CaC
2The time can add that a small amount of (about 1～3wt%) rare earth oxide is with its light transmission of further raising; Both can adopt high-purity AlN powder of carbothermic method preparation in the preparation process, can use the thicker SHS powder of particle diameter again, greatly reduce requirement, can get the preferable material of light transmission equally material powder.(maximum transmission of wavelength 200～2200nm) is greater than 60%, and its density reaches 3.26g/cm at ultraviolet, visible light and near-infrared band with transparent AlN material that the method for the invention makes
3, very approaching with theoretical density, void content＜0.1%, room temperature bending strength are ideal transparent materials comparatively between 450～500MPa.
Below in conjunction with specific embodiment, further specify substantive distinguishing features of the present invention and obvious improvement.Embodiment 1
Additive therefor is a carbide of calcium.Concrete component is 3.0%CaC
2(weight ratio) is with the aluminium nitride powder uniform mixing.Aluminum nitride powder is prepared by carbothermic method, and median size is 2.0 μ m.Initial powder is dry-pressing formed with single shaft, and forming pressure is 4MPa.Biscuit is inserted in the graphite jig that applies BN, at mobile N
2In the atmosphere in 1800 ℃ of hot pressed sinterings.Heat-up rate is 20 ℃/min, and temperature begins pressurization when rising to 1300 ℃, pressure 15MPa, and temperature rises to 40MPa with pressure after arriving 1800 ℃ again, is incubated 8 hours.The sample furnace cooling.
The transparent aluminium nitride ceramic that makes possesses good light transmittance, as shown in Figure 1.Performance is as follows:
Density (gcm
-3) 3.26
Crystalline phase (X light analysis) AlN
Void content (%)＜0.1
Intensity (MPa) 475
(see Fig. 2, X-coordinate is a wavelength to the 200-2200nm ripple
(％)????????????????????????????????＞65
Section maximum transmission nm, ordinate zou is transmitance %)
From the analysis of SEM fracture apperance as seen, the AlN grain growing is complete, and the crystal grain of rule is all closely arranged with the crystal face two dimension, thereby causes material transparent, as shown in Figure 3.Embodiment 2
Additive therefor is the mixture of carbide of calcium and yttrium oxide.Concrete component is 3.0%CaC
2, 1.0%Y
2O
3(being weight ratio) is with the aluminium nitride powder uniform mixing.Aluminum nitride powder is prepared by carbothermic method, and median size is 2.0 μ m.Initial powder is dry-pressing formed with single shaft, and forming pressure is 4MPa.At mobile N
2+ H
2In the atmosphere in 1800 ℃ of hot pressed sinterings.Heat-up rate is 20 ℃/min, and temperature begins pressurization when rising to 1400 ℃, and pressure is 10MPa, and temperature rises to 20MPa with pressure after arriving 1800 ℃ again, is incubated 6 hours.The sample furnace cooling.
The transparent aluminium nitride ceramic performance that makes is as follows:
Density (gcm
-3) 3.26
Crystalline phase (X light analysis) AlN
Void content (%)＜0.1
Intensity (MPa) 500
200～2200nm ripple
(％)???????????????????????????????＞65
The section maximum transmission
All the other are with embodiment 1.Embodiment 3
Additive therefor is the mixture of carbide of calcium and yttrium oxide.Concrete component is 2.0%CaC
2, 2.0%Y
2O
3(being weight ratio) is with the aluminium nitride powder uniform mixing.Aluminum nitride powder is by spreading the method preparation certainly, and median size is 4.0 μ m.Initial powder cold isostatic compaction, forming pressure are 200MPa.Biscuit is inserted in the graphite jig that applies BN, at mobile N
2In+Ar the atmosphere in 1800 ℃ of hot pressed sinterings.Sintering schedule is 20 ℃/min of heat-up rate, and temperature begins pressurization when rising to 1350 ℃, and pressure is 15MPa, and temperature rises to 30MPa with pressure after arriving 1800 ℃ again, is incubated 4 hours.The sample furnace cooling.
The transparent aluminium nitride ceramic performance that makes is as follows:
Density (gcm
-3) 3.26
Crystalline phase (X light analysis) AlN
Void content (%)＜0.1
Intensity (MPa) 460
200～2200nm ripple
(％)?????????????????＞60
The section maximum transmission
All the other are with embodiment 1.Embodiment 4
Additive therefor is the mixture of carbide of calcium and yttrium oxide.Concrete component is 3.0%CaC
2, 1.0%Y
2O
3(being weight ratio) is with the aluminium nitride powder uniform mixing.Aluminum nitride powder is prepared by carbothermic method, and median size is 2.0 μ m.Initial powder single shaft dry-pressing or cold isostatic compaction.Biscuit is inserted in the graphite jig that applies BN, at mobile N
2+ H
2In the atmosphere in 1600 ℃ of hot pressed sinterings.Sintering schedule is 20 ℃/min of heat-up rate, and temperature begins pressurization when rising to 1300 ℃, and pressure is 15MPa, and temperature rises to 20MPa with pressure after arriving 1600 ℃ again, is incubated 8 hours.Then sintered compact is inserted in the plumbago crucible or boron nitride crucible that applies BN, at mobile N
2Heat-treat in 1900 ℃ in the atmosphere, 10 ℃/min of heat-up rate is incubated 20 hours.The sample furnace cooling.
The transparent aluminium nitride ceramic performance that makes is as follows:
Density (gcm
-3) 3.26
Crystalline phase (X light analysis) AlN
Void content (%)＜0.1
Intensity (MPa) 450
200～2200nm ripple
(％)????????????????????????＞60
The section maximum transmission
All the other are with embodiment 1 and 3.Embodiment 5
Additive therefor is the mixture of carbide of calcium and rare-earth oxide.Concrete component is 3.0%CaC
2, 1.5%Sm
2O
3(being weight ratio) is with the aluminium nitride powder uniform mixing.Aluminum nitride powder is by spreading the method preparation certainly, and median size is 6.0 μ m.Initial powder is dry-pressing formed with single shaft, and forming pressure is 4MPa.Biscuit is inserted in the graphite jig that applies BN, at mobile N
2+ H
2In the atmosphere in 1600 ℃ of hot pressed sinterings.Sintering schedule is 20 ℃/min of heat-up rate, and temperature begins pressurization when rising to 1400 ℃, and pressure is 10MPa, and temperature rises to 40MPa with pressure after arriving 1600 ℃ again, is incubated 4 hours.Then sintered compact is inserted in the plumbago crucible or boron nitride crucible that applies BN, at mobile N
2Heat-treat in 1800 ℃ in the atmosphere, 10 ℃/min of heat-up rate is incubated 40 hours.The sample furnace cooling.
The transparent aluminium nitride ceramic performance that makes is as follows:
Density (gcm
-3) 3.26
Crystalline phase (X light analysis) AlN
Void content (%)＜0.1
Intensity (MPa) 450
200～2200nm wave band
(％)?????????????????＞65
Maximum transmission embodiment 6
Additive therefor is 3.0%CaC
2, 2.0%Dy
2O
3The mixture of (being weight ratio), all the other are with embodiment 5.
The transparent aluminium nitride ceramic performance that makes is as follows:
Density (gcm
-3) 3.26
Crystalline phase (X light analysis) AlN
Void content (%)＜0.1
Intensity (MPa) 450
200～2200nm ripple
(％)?????????????????＞60
Section maximum transmission embodiment 7
Additive therefor is the mixture of carbide of calcium and rare-earth oxide.Concrete component is 4.0%CaC
2, 1.5%Y
2O
3(being weight ratio) is with the aluminium nitride powder uniform mixing.Aluminum nitride powder is by spreading the method preparation certainly, and median size is 6.0 μ m.Initial powder cold isostatic compaction, forming pressure are 200MPa.Biscuit is inserted in the plumbago crucible that applies BN, with the embedding of BN powder, at mobile N
2In 1850 ℃ of pressureless sinterings, 10 ℃/min of heat-up rate is incubated 12 hours in the atmosphere.The sample furnace cooling.
The transparent aluminium nitride ceramic performance that makes is as follows:
Density (gcm
-3) 3.25
Crystalline phase (X light analysis) AlN
Void content (%)＜0.1
Intensity (MPa) 480
200-2200nm ripple (%)＞55
The section maximum transmission
For simplicity, table one lump the processing parameter of seven embodiment provided by the invention and the performance of the corresponding transparent AlN material of making.
Each embodiment technology abridged table of table 1 embodiment processing parameter provided by the invention and performance lump
Each embodiment performance abridged table
| The AlN powder | Additive | Moulding | Sintering | Technology | Atmosphere | |
| Example 1 | Carbothermic method | 3.0％CaC 2 | Dry-pressing | Hot pressing | 1800℃，40MPa，8hr | N flows 2 |
| Example 2 | Carbothermic method | 3.0％CaC 2、1.0％Y 2O 3 | Dry-pressing | Hot pressing | 1800℃，20MPa，6hr | N flows 2+H 2 |
| Example 3 | SHS | 2.0％CaC 2、2.0％Y 2O 3 | CIP | Hot pressing | 1800℃，30MPa，4hr | N flows 2+Ar |
| Example 4 | Carbothermic method | 3.0％CaC 2、1.0％Y 2O 3 | Dry-pressing/CIP | Hot pressing | 1600 ℃, 20MPa, 1900 ℃ of 8hr, 20hr thermal treatment | N flows 2+H 2Sintering, N flows 2Thermal treatment |
| Example 5 | SHS | 3.0％CaC 2、1.5％Sm 2O 3 | Dry-pressing | Hot pressing | 1600 ℃, 40MPa, 1800 ℃ of 4hr, 40hr thermal treatment | The same |
| Example 6 | SHS | 3.0％CaC 2、2.0％Dy 2O 3 | Dry-pressing | Hot pressing | The same | The same |
| Example 7 | SHS | 4.0％CaC 2、1.5％Y 2O 3 | CIP | Do not have and press | 1850℃，12hr | N flows 2 |
| Embodiment 1 | Embodiment 2 | Embodiment 3 | Embodiment 4 | Embodiment 5 | Embodiment 6 | Embodiment 7 | ||
| Density | (g·cm -3) | 3.26 | ?3.26 | ?3.26 | ?3.26 | ?3.26 | ?3.26 | ?3.25 |
| Crystalline phase | (X light analysis) | AlN | ?AlN | ?AlN | ?AlN | ?AlN | ?AlN | ?AlN |
| Void content | (％) | ＜0.1 | ?＜0.1 | ?＜0.1 | ?＜0.1 | ?＜0.1 | ?＜0.1 | ?＜0.1 |
| Intensity | (MPa) | 475 | ?500 | ?460 | ?450 | ?450 | ?450 | ?480 |
| 200～2200nm wave band maximum transmission | (％) | ＞65 | ?＞65 | ?＞60 | ?＞60 | ?＞65 | ?＞60 | ?＞55 |
Claims (3)
1. a Preparation of Translucent AlN Ceramics method comprises selecting for use of sintering aid carbide of calcium, at N
2, N
2+ Ar or N
2+ H
2Under arbitrary mobile atmosphere, adopt hot pressing, do not have and press and low temperature hot-press sintering thermal treatment process afterwards, it is characterized in that:
(1) used sintering aid is a technical grade carbide of calcium, and its add-on is 3wt%;
(2) used sintering aid is the mixture of technical grade carbide of calcium and rare earth oxide, and its add-on is 2～4wt%CaC
2+ 1～3wt%Re
2O
3(Re is one of Y, Ce, Sm, Dy, Er or Yb);
(3) employed AlN powder can be the high-purity ultra-fine aluminum nitride powder of the carbothermic method preparation used always, also can be with the powder of the mean particle size of producing from the method that spreads at 7～8 μ m;
(4) adopt the hot-press method preparation, hot pressing temperature is 1700～1800 ℃, and pressure is 5～40MPa, is incubated 4～10 hours, the sample furnace cooling; Employing pressureless sintering preparation, sintering temperature is 1850 ℃, is incubated 12 hours, the sample furnace cooling; Adopt behind the low temperature and pressure thermal treatment process again, 1500～1600 ℃ of its hot pressing temperatures, pressure is 10～40MPa, be incubated 1～2 hour, is incubated 15～40 hours in 1800～1900 ℃ then, heat-up rate is 10 ℃/min, the sample furnace cooling.
2. by the described preparation method of claim 1, it is characterized in that adopting heat pressing process, sample is earlier with dry-pressing or isostatic cool pressing (CIP) moulding, be placed on the graphite grinding tool that inwall applies BN then, divide the two-stage pressurization, 1300 ℃～1400 ℃ beginnings are just pressurizeed, and pressure is 10～15MPa, treat that temperature is raised to 1800 ℃ and again pressure is risen to 20～40MPa.
3. by the described preparation method of claim 1, it is characterized in that adopting low temperature and pressure thermal treatment process again, adopt the preliminary sintering of heat pressing process under 1500 ℃～1600 ℃ low temperature, pressure is 5～15MPa; Then sample is placed in plumbago crucible or the boron nitride crucible and heat-treats, the time is 15～24 hours.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98110799A CN1076012C (en) | 1998-04-24 | 1998-04-24 | Process for preparation of transparent aluminium nitride ceramic |
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|---|---|---|---|
| CN98110799A CN1076012C (en) | 1998-04-24 | 1998-04-24 | Process for preparation of transparent aluminium nitride ceramic |
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|---|---|
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| CN1076012C CN1076012C (en) | 2001-12-12 |
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ID=5220817
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|---|---|---|---|
| CN98110799A Expired - Fee Related CN1076012C (en) | 1998-04-24 | 1998-04-24 | Process for preparation of transparent aluminium nitride ceramic |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1081178C (en) * | 1998-07-08 | 2002-03-20 | 中国科学院上海硅酸盐研究所 | Method for preparing high thermal-conductivity aluminum nitride ceramics |
| CN1092165C (en) * | 1998-07-08 | 2002-10-09 | 中国科学院上海硅酸盐研究所 | Low temp. sintering of aluminum nitride ceramics |
| CN100415687C (en) * | 2002-09-20 | 2008-09-03 | 株式会社德山 | Aluminum nitride sintered compact |
| CN101948315A (en) * | 2010-09-21 | 2011-01-19 | 上海理工大学 | Low-temperature sintering method of high-performance aluminium nitride ceramics |
| CN103011830A (en) * | 2012-12-31 | 2013-04-03 | 河南理工大学 | Ultrahigh-pressure low-temperature sintering preparation method of transparent aluminium nitride ceramic |
| CN101868315B (en) * | 2007-11-22 | 2013-06-12 | 高级交互材料科学有限公司 | Net or near net shape powder metallurgy process |
| CN103539457A (en) * | 2013-09-29 | 2014-01-29 | 合肥工业大学 | Preparation method of AlN ceramic base plate for microelectronic packaging |
| CN103703542A (en) * | 2012-07-18 | 2014-04-02 | 日本碍子株式会社 | Composite wafer and manufacturing method therefor |
| CN105948759A (en) * | 2016-06-08 | 2016-09-21 | 山东鹏程陶瓷新材料科技有限公司 | Aluminum nitride ceramic substrate prepared through vacuum hot-pressing sintering method and preparation method of aluminum nitride ceramic substrate |
| CN107698259A (en) * | 2017-09-27 | 2018-02-16 | 上海东洋炭素有限公司 | A kind of method of iron and impurity levels in reduction aluminium nitride powder |
| CN108546097A (en) * | 2018-07-03 | 2018-09-18 | 洛阳欣珑陶瓷有限公司 | Ice porcelain and its preparation process |
| CN112961677A (en) * | 2021-02-03 | 2021-06-15 | 杭州电子科技大学 | Broadband near-infrared emission fluorescent powder capable of being excited by blue light and preparation method thereof |
| CN115385693A (en) * | 2022-09-15 | 2022-11-25 | 江西咏泰粉末冶金有限公司 | Preparation method of (Ti, W) C ceramic material |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03257071A (en) * | 1989-11-30 | 1991-11-15 | Toshiba Corp | Light shielding aluminum nitride sintered body and its production |
-
1998
- 1998-04-24 CN CN98110799A patent/CN1076012C/en not_active Expired - Fee Related
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1092165C (en) * | 1998-07-08 | 2002-10-09 | 中国科学院上海硅酸盐研究所 | Low temp. sintering of aluminum nitride ceramics |
| CN1081178C (en) * | 1998-07-08 | 2002-03-20 | 中国科学院上海硅酸盐研究所 | Method for preparing high thermal-conductivity aluminum nitride ceramics |
| CN100415687C (en) * | 2002-09-20 | 2008-09-03 | 株式会社德山 | Aluminum nitride sintered compact |
| CN101868315B (en) * | 2007-11-22 | 2013-06-12 | 高级交互材料科学有限公司 | Net or near net shape powder metallurgy process |
| CN101948315A (en) * | 2010-09-21 | 2011-01-19 | 上海理工大学 | Low-temperature sintering method of high-performance aluminium nitride ceramics |
| CN103703542A (en) * | 2012-07-18 | 2014-04-02 | 日本碍子株式会社 | Composite wafer and manufacturing method therefor |
| CN103703542B (en) * | 2012-07-18 | 2016-06-08 | 日本碍子株式会社 | Composite crystal and manufacture method thereof |
| CN103011830A (en) * | 2012-12-31 | 2013-04-03 | 河南理工大学 | Ultrahigh-pressure low-temperature sintering preparation method of transparent aluminium nitride ceramic |
| CN103539457A (en) * | 2013-09-29 | 2014-01-29 | 合肥工业大学 | Preparation method of AlN ceramic base plate for microelectronic packaging |
| CN105948759A (en) * | 2016-06-08 | 2016-09-21 | 山东鹏程陶瓷新材料科技有限公司 | Aluminum nitride ceramic substrate prepared through vacuum hot-pressing sintering method and preparation method of aluminum nitride ceramic substrate |
| CN107698259A (en) * | 2017-09-27 | 2018-02-16 | 上海东洋炭素有限公司 | A kind of method of iron and impurity levels in reduction aluminium nitride powder |
| CN108546097A (en) * | 2018-07-03 | 2018-09-18 | 洛阳欣珑陶瓷有限公司 | Ice porcelain and its preparation process |
| CN112961677A (en) * | 2021-02-03 | 2021-06-15 | 杭州电子科技大学 | Broadband near-infrared emission fluorescent powder capable of being excited by blue light and preparation method thereof |
| CN112961677B (en) * | 2021-02-03 | 2022-06-14 | 杭州电子科技大学 | Broadband near-infrared emission fluorescent powder capable of being excited by blue light and preparation method thereof |
| CN115385693A (en) * | 2022-09-15 | 2022-11-25 | 江西咏泰粉末冶金有限公司 | Preparation method of (Ti, W) C ceramic material |
| CN115385693B (en) * | 2022-09-15 | 2023-08-18 | 江西咏泰粉末冶金有限公司 | Preparation method of (Ti, W) C ceramic material |
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|---|---|
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