CN1197931C - Silica-base compound-violet luminous material and preparation process thereof - Google Patents
Silica-base compound-violet luminous material and preparation process thereof Download PDFInfo
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- CN1197931C CN1197931C CN 00135466 CN00135466A CN1197931C CN 1197931 C CN1197931 C CN 1197931C CN 00135466 CN00135466 CN 00135466 CN 00135466 A CN00135466 A CN 00135466A CN 1197931 C CN1197931 C CN 1197931C
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- luminescent material
- monocrystalline silicon
- irradiation
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Abstract
The present invention relates to a novel silicon based luminescent material for blue-violet light and a preparation process thereof. The luminescent material is made by arranging a luminescent layer on a monocrystalline silicon chip layer and arranging a film protecting layer on the luminescent layer. The preparation process comprises: firstly, the monocrystalline silicon chip is thermally treated at high temperature and in atmosphere; then, ions are injected into the pretreated monocrystalline silicon chip for doping; finally, high-energy heavy ions are used for irradiating the doped silicon chip. The luminescent material of the present invention has stable performance and high luminescent efficiency and can send out blue-purple light. The preparation process replaces the traditional process.
Description
Technical field
The present invention relates to a kind of silicon base luminous material and preparation technology thereof, especially a kind of silica-based indigo plant-purple light luminescent material.
Background technology
At present, General Physics, chemistry or physical chemistry technology are generally adopted in the making of silicon base luminous material, as chemical corrosion, radio frequency glow discharge, plasma activated chemical vapour deposition, high temperature oxidation aftertreatment, ion implantation in conjunction with anneal etc.Silicon base luminous material with these technology mades is generally the luminescent material of launching long wavelength's light wave (as ruddiness), generally can not obtain launching the luminescent material of indigo plant-purple light.The performance perameter repeatability of the material of making of above-mentioned technology is also relatively poor in addition.
Summary of the invention
The objective of the invention is in order to provide a kind of stable performance and luminous efficiency higher silica-based indigo plant-purple light luminescent material.
Another object of the present invention is for a kind of technology by adopting high-energy heavy ion Shu Jiagong coupled ion to inject is provided, replacing traditional technology, and the preparation technology of the stable and silica-based indigo plant-purple light luminescent material that luminous efficiency is higher of production performance.
Purpose of the present invention can realize by following measure:
A kind of novel silicon base indigo plant-purple light luminescent material is to be provided with luminescent layer on the monocrystalline silicon substrate layer, and described luminescent layer is C
xSi
yO
1-x-yStructure, x=0.005-0.92 wherein, y=0.02-0.45, the thickness of luminescent layer are 0.05-4.0 μ m; Its luminescence center microcell area density is 1 * 10
9-1 * 10
15Cm
-2, emission wavelength is 370nm-470nm; Be provided with thinfilm protective coating on luminescent layer, described thinfilm protective coating has class SiO
2Structure, its thickness are 0.08-2.0 μ m; Wherein this luminescent material is to be 700-1300 ℃ with monocrystalline silicon piece in temperature earlier, and atmosphere is to heat-treat under high purity oxygen gas or the high purity water steam; Then the monocrystalline silicon piece after the thermal treatment being injected ion mixes; With high-energy heavy ion doped silicon wafer is carried out irradiation again and make; When described doping back silicon chip carried out heavy ion irradiation, its irradiation energy was 100MeV-3.0GeV.
Another object of the present invention also can realize by following measure:
The preparation technology of a kind of silica-based indigo plant-purple light luminescent material comprises the steps: to be 700-1300 ℃ with monocrystalline silicon piece in temperature earlier, and atmosphere is to heat-treat under high purity oxygen gas or the high purity water steam: then the monocrystalline silicon piece after the thermal treatment is injected ion and mix; With energetic ion doped silicon wafer is carried out irradiation again; When described doping back silicon chip carried out heavy ion irradiation, its irradiation energy was 100MeV-3.0GeV.
The present invention has following advantage compared to existing technology:
1, the present invention adopts the print that high energy ion beam processing having carried out carbon ion injects, the performance perameter good reproducibility of the luminescent material of made, and stable performance.
2, the carbon ion of the present invention's employing injects and can make the basic unit that sets shape in given print internal request degree of depth district, high-energy heavy ion Shu Jiagong subsequently produces luminous point and luminescence center and makes it become luminescent layer in this basic unit, may command such as the shape of luminescent layer and thickness, luminous point and luminescence center being evenly distributed in luminescent layer, and also may command.
3, the luminescent material of made of the present invention has light transmission protective layer-luminescent layer-silica-based lamella sandwich structure for the novel silicon base luminescent material of the blue purple light of emission, and the light transmission protective layer film on surface can protect luminescent layer to make it not be subject to damage.
Description of drawings
Concrete structure of the present invention is provided by the following drawings:
Fig. 1 is a structural representation of the present invention
1-monocrystalline silicon substrate layer, 2-luminescent layer, 3-thinfilm protective coating
Embodiment
The present invention also incites somebody to action in conjunction with the accompanying drawings, and embodiment is described in further detail:
With reference to Fig. 1, an a kind of novel blue purple light luminescent material is to be provided with luminescent layer 2 on monocrystalline silicon substrate layer 1, is provided with thinfilm protective coating 3 on luminescent layer 2.
Described luminescent layer 2 is for having C
xSi
yO
1-x-yStructure, x=0.005-0.92 wherein, y=0.02-0.45; Luminescent layer 2 thickness are 0.05-4.0 μ m, and luminescence center microcell area density is 1 * 10
9-1 * 10
15Cm
-2, emission wavelength is 370nm-470nm.
Described thinfilm protective coating 3 has class SiO
2Structure, thickness are 0.08-2.0 μ m.
Preparation technology of the present invention comprises the steps: earlier that with monocrystalline silicon piece at high temperature 700-1300 ℃, atmosphere is to heat-treat under high purity oxygen gas or the high purity water steam; Then pretreated monocrystalline silicon piece is adopted the carbon ion injection of mixing, its energy is 10KeV-5MeV; With high-energy heavy ion doped silicon wafer is carried out irradiation again, its irradiation energy is 100MeV-3.0GeV.
Claims (3)
1, a kind of novel silicon base indigo plant-purple light luminescent material is characterized in that being provided with luminescent layer (2) on monocrystalline silicon substrate layer (1), and described luminescent layer (2) is C
xSi
yO
1-x-yStructure, x=0.005-0.92 wherein, y=0.02-0.45; The thickness of luminescent layer (2) is 0.05-4.0 μ m; Its luminescence center microcell area density is 1 * 10
9-1 * 10
15Cm
-2, emission wavelength is 370nm-470nm; Be provided with thinfilm protective coating (3) on luminescent layer (2), described thinfilm protective coating (3) has class SiO
2Structure, its thickness are 0.08-2.0 μ m; Wherein this luminescent material is to be 700-1300 ℃ with monocrystalline silicon piece in temperature earlier, and atmosphere is to heat-treat under high purity oxygen gas or the high purity water steam; Then the monocrystalline silicon piece after the thermal treatment being injected ion mixes; With high-energy heavy ion doped silicon wafer is carried out irradiation again and make; When described doping back silicon chip carried out heavy ion irradiation, its irradiation energy was 100MeV-3.0GeV.
2, the preparation technology of the described novel silicon base indigo plant of a kind of claim 1-purple light luminescent material is characterized in that comprising the steps: to be 700-1300 ℃ with monocrystalline silicon piece in temperature earlier, and atmosphere is to heat-treat under high purity oxygen gas or the high purity water steam; Then the monocrystalline silicon piece after the thermal treatment being injected ion mixes; With high-energy heavy ion doped silicon wafer is carried out irradiation again; When described doping back silicon chip carried out heavy ion irradiation, its irradiation energy was 100MeV-3.0GeV.
3, the preparation technology of novel silicon base indigo plant as claimed in claim 2-purple light luminescent material is characterized in that it is to adopt carbon ion to inject that described pretreated silicon chip mixes, and its energy is 10KeV-5MeV.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00135466 CN1197931C (en) | 2000-12-13 | 2000-12-13 | Silica-base compound-violet luminous material and preparation process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00135466 CN1197931C (en) | 2000-12-13 | 2000-12-13 | Silica-base compound-violet luminous material and preparation process thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1358820A CN1358820A (en) | 2002-07-17 |
| CN1197931C true CN1197931C (en) | 2005-04-20 |
Family
ID=4596736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 00135466 Expired - Fee Related CN1197931C (en) | 2000-12-13 | 2000-12-13 | Silica-base compound-violet luminous material and preparation process thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1197931C (en) |
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2000
- 2000-12-13 CN CN 00135466 patent/CN1197931C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1358820A (en) | 2002-07-17 |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050420 Termination date: 20121213 |