CN1190884C - Power factor improving converter - Google Patents
Power factor improving converter Download PDFInfo
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- CN1190884C CN1190884C CNB01118454XA CN01118454A CN1190884C CN 1190884 C CN1190884 C CN 1190884C CN B01118454X A CNB01118454X A CN B01118454XA CN 01118454 A CN01118454 A CN 01118454A CN 1190884 C CN1190884 C CN 1190884C
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/10—Efficient use of energy, e.g. using compressed air or pressurized fluid as energy carrier
Abstract
The present invention relates to a zero-voltage and zero-current switching power factor improvement converter which comprises a resonant unit, a voltage boosting unit and a power factor improvement controller, wherein the resonant unit is composed of a primary switching element, a secondary switching element and a resonant circuit and is set to releases energy to a load by an energy storage device of an alternate coherence resonance circuit; the voltage boosting unit is composed of a voltage boosting inductor, a rectification circuit, a third switching element and a fourth switching element; the power factor improvement controller sends out a control signal to drive the third switching element to switch the state of the third switching element when the voltage bridged on the third switching element is zero; the power factor improvement controller sends out a control signal to drive the fourth switching element to switch the state of the fourth switching element when the voltage bridged on the fourth switching element is zero.
Description
The present invention relates to a kind of power-factor improvement transducer, particularly relate to the power-factor improvement transducer of the zero-voltage zero-current switching of low conduction loss of a kind of tool and low switch cost
(zero-voltage，zero-current?switching?power?factor?correctionconverter)。
See also Fig. 1, it is existing electrical block diagram in order to the single-phase type boost converter of realizing power-factor improvement.In the circuit structure of Fig. 1, when main switch Sm conducting, the path that its electric current flows is flow through two input rectifying diode D3 and D2, boost inductance (boost choke) L1 and main switch Sm; And when main switch Sm closed, the path that its electric current flows was flow through two other input rectifying diode D4 and D1, boost inductance L1 and output diode Dm.Therefore, the power converter of Fig. 1 can have bigger conduction loss.
See also Fig. 2, it is another kind of existing electrical block diagram in order to the single-phase type boost converter of realizing power-factor improvement.Compare with the boost converter of Fig. 1, though the boost converter of Fig. 2 has less conduction loss, but the problem because of rectifier diode itself existence work reverse recovery time (trr) must adopt supper-fast reverse recovery diode (hyper fast recovery diode) to reduce the switch cost of main switch S1 and S2.Yet the forward voltage of the supper-fast reverse recovery diode among Fig. 2 itself comes highly more than the forward voltage of the input rectifying diode among Fig. 1.Therefore, the power converter designs of Fig. 2 and fail to get a desired effect.In other words, the power converter designs of Fig. 2 does not obtain to reduce the advantage of conduction loss, and the problem of electromagnetic interference (EMI) that is wherein produced and radio frequency interference (RFI) still can't be resolved.
It is a kind of in order to realizing the boost converter of power-factor improvement that first purpose of the present invention is to provide, and it has lower conduction loss and switch cost, lower electromagnetic interference and radio frequency interference, less magnetic element size and preferable whole efficiency.
Another object of the present invention is to provide a power-factor improvement transducer, its setting state is the state that the power switched factor changes the switch of the boost power transducer in the transducer when no-voltage or zero current, and reduce the conduction loss of electric current in the boost power transducer, to optimize the whole efficiency of power-factor improvement transducer.
The objective of the invention is to realize in the following manner:
Boost power transducer according to first exemplary embodiments of the present invention, it comprises: a resonant element, comprise one first switch element, an one second switch element and a resonant circuit, wherein one first end of this resonant circuit is connected in first end of this first switch element, second end of this first switch element is connected in first end of this second switch element, second end of this second switch element is connected in second end of this resonant circuit, and this resonant circuit comprises at least one first store energy element and one second store energy element, wherein first end of this first store energy element is connected in first end of this second store energy element to constitute this first end of this resonant circuit, second end of this first store energy element is connected in second end of this second store energy element to constitute this second end of this resonant circuit, and this resonant element is to be set alternately to release energy to a load from this first store energy element or this second store energy element; An and boosting unit, comprise a boost inductance, one rectification circuit, one the 3rd switch element and one the 4th switch element, wherein first end of this boost inductance is connected in the positive pole of an alternating voltage to accept this alternating voltage, this rectification circuit is coupled between this boost inductance and this resonant element, one first end of the 3rd switch element is connected in this first end of this first store energy element, second end of the 3rd switch element is connected in this second end of this first store energy element, first end of the 4th switch element is connected in this first end of this second store energy element, and second end of the 4th switch element is connected in this second end of this second store energy element.
In order to reduce the switch cost that moment produced that switch switches at state, the state of resonant element is to be set to the state that switches this first switch element and this second switch element when zero current, and the state of boosting unit is to be set to the state that switches the 3rd switch element and the 4th switch element when no-voltage.
The conception according to the present invention, this load is to comprise one first output capacitance and one second output capacitance, and this boosting unit also optionally comprises an inductor, is coupled in a side of this alternating voltage and a node of the 4th switch element, in order to eliminate the common-mode noise of this boost power transducer.Above-mentioned resonant circuit is to comprise an inductor and one first electric capacity and one second electric capacity, and this first electric capacity and this second electric capacity are to merge into an equivalent electric capacity.
According to one first embodiment of the present invention, this first switch element and this second switch element are to form by a unidirectional switch arrangement.This unidirectional switch arrangement is can or have one of the quite high collection utmost point-emitter-base bandgap grading reverse bias insulated gate bipolar transistor (IGBT) by a silicon controlled rectifier (SCR) to be formed.The another kind of selection is that first switch element and second switch element are formed with a general insulated gate bipolar transistor (IGBT) or a mos field effect transistor (MOSFET).Thus, just need a rectifier cell to be connected in series with this second switch element as a rectifier diode.
Rectification circuit in the boosting unit is made up of one first rectifier cell, one second rectifier cell and one the 3rd rectifier cell.In a preferred embodiment of the present invention, rectifier cell all by one extremely fast reverse recovery diode (ultra fast recovery diode) formed.In other preferred embodiment of the present invention, rectifier cell is formed by a two-way rectifier cell such as a mos field effect transistor (MOSFET).
Also comprise one first auxiliary rectifier element and one second auxiliary rectifier element in boost power transducer of the present invention, also extremely fast reverse recovery diode (ultra fast recoverydiode) or a mos field effect transistor (MOSFET) are formed by one for they.
Alternatively, boost power transducer of the present invention also comprises a saturation type inductance, is coupled between the inductor and this load of this resonant circuit, in order to the higher-order of oscillation (ringing) that reduces this resonant circuit.
According to of the present invention one typical preferred embodiment conception on the other hand, one power-factor improvement transducer, it comprises: a resonant element, comprise one first switch element, an one second switch element and a resonant circuit, wherein first end of this resonant circuit is connected in first end of this first switch element, second end of this first switch element is connected in first end of this second switch element, second end of this second switch element is connected in second end of this resonant circuit, and this resonant circuit comprises at least one first store energy element and one second store energy element, wherein first end of this first store energy element is connected in first end of this second store energy element to constitute this first end of this resonant circuit, second end of this first store energy element is connected in second end of this second store energy element to constitute this second end of this resonant circuit, and this resonant element is to be set alternately to release energy to a load from this first store energy element or this second store energy element; One boosting unit, comprise a boost inductance, one rectification circuit, one the 3rd switch element and one the 4th switch element, wherein first end of this boost inductance is connected in the positive pole of an alternating voltage to accept this alternating voltage, this rectification circuit is coupled between this boost inductance and this resonant element, first end of the 3rd switch element is connected in this first end of this first store energy element, second end of the 3rd switch element is connected in this second end of this first store energy element, first end of the 4th switch element is connected in this first end of this second store energy element, and second end of the 4th switch element is connected in this second end of this second store energy element; An and power-factor improvement controller, be connected in this load, it is that a voltage of complying with cross-over connection the 3rd switch element sends a controlling signal when being zero and drives the 3rd switch element and change its state, and a voltage of complying with cross-over connection the 4th switch element sends a controlling signal when being zero and drives the 4th switch element and change its state.
Power-factor improvement transducer of the present invention also comprises a zero-voltage detector (zero voltagedetector), it receives the voltage of cross-over connection the 3rd switch element and the voltage of cross-over connection the 4th switch element, and when the voltage of the voltage of the 3rd switch element or the 4th switch element is zero, send a controlling signal to this power-factor improvement controller to drive the state that this power-factor improvement controller changes the 3rd switch element or the 4th switch element.
For realize the purpose of the switch cost that the minimizing switch is caused when switching, the state of resonant element is to be set to the state that switches this first switch element and this second switch element when zero current.This load is to comprise one first output capacitance and one second output capacitance.
Alternatively, boosting unit also can comprise an inductor, is coupled in a side of this alternating voltage and a node of the 4th switch element, in order to eliminate the common-mode noise of this boost power transducer.And this resonant circuit is to comprise an inductor and one first electric capacity and one second electric capacity.This first electric capacity and this first electric capacity are to merge into an equivalent electric capacity.
Comparatively it is desirable to, this first switch element and this second switch element are to form by a unidirectional switch arrangement.This unidirectional switch arrangement can be made up of a silicon controlled rectifier (SCR) or the insulated gate bipolar transistor (IGBT) with the quite high collection utmost point-emitter-base bandgap grading reverse bias.The another kind of selection is that first switch element and second switch element are formed with an insulated gate bipolar transistor (IGBT) or a mos field effect transistor (MOSFET).Thus, just need a rectifier cell to be connected in series with this second switch element as a rectifier diode.
Above-mentioned rectification circuit is made up of one first rectifier cell, one second rectifier cell and one the 3rd rectifier cell.This rectifier cell all extremely fast formed by one by reverse recovery diode (ultra fastrecovery diode) or a mos field effect transistor (MOSFET).Comparatively it is desirable to, this boosting unit also comprises one first auxiliary rectifier element and one second auxiliary rectifier element, and also extremely fast reverse recovery diode (ultra fast recovery diode) or a mos field effect transistor (MOSFET) are formed by one for they.
Alternatively, this resonant element also comprises a saturation type inductance, is coupled between the inductor and this load of this resonant circuit, in order to the higher-order of oscillation (ringing) that reduces this resonant circuit.
, be described in further detail foregoing of the present invention and advantage of the present invention and technical characterictic below in conjunction with embodiment and accompanying drawing thereof.
Fig. 1 is existing electrical block diagram in order to the single-phase type boost converter of realizing power-factor improvement;
Fig. 2 is the electrical block diagram of existing another kind in order to the single-phase type boost converter of realization power-factor improvement;
Fig. 3 (A) is the circuit topography figure that is applied to the boost power transducer in the power-factor improvement transducer according to a preferred embodiment of the present invention;
Fig. 3 (B) is that the first resonant capacitance Cr1 and the second resonant capacitance Cr2 merge into the circuit symbol schematic diagram of the resonant capacitance Cr of an equivalence in the resonant circuit according to boost power transducer of the present invention;
Fig. 4 is each clock figure that drives signal in the power-factor improvement transducer of a preferred embodiment of the present invention;
Fig. 5 has shown circuit box schematic diagram according to the power-factor improvement transducer of one first preferred embodiment of the present invention with legend;
Fig. 6 (a) explains orally the circuit operating mode of boost power transducer of the present invention at positive half cycle with legend to Fig. 6 (1);
Fig. 7 to Figure 13 is the topo graph according to the boost power transducer of other embodiments of the invention, and it is to get for revising based on the topo graph of Fig. 3.
See also Fig. 3 (A), Fig. 3 (B), Fig. 4 and Fig. 5.Fig. 3 (A) is for being applied to the circuit topography figure of the boost power transducer in the power-factor improvement transducer according to a preferred embodiment of the present invention.Fig. 4 is each clock figure that drives signal in the power-factor improvement transducer of a preferred embodiment of the present invention.Fig. 5 is the circuit structure diagram in according to a preferred embodiment of the present invention the power-factor improvement transducer.In Fig. 3 (A), boost power transducer of the present invention has comprised a resonant element (resonant unit), and it comprises one first switch element Sa1, a second switch element Sa2 and a resonant circuit is formed.Resonant circuit is to comprise resonant inductance Lr, one first resonant capacitance Cr1 and one second resonant capacitance Cr2, yet the first resonant capacitance Cr1 and the second resonant capacitance Cr2 are the resonant capacitance Cr that can merge into an equivalence, shown in the circuit symbol schematic diagram of Fig. 3 (B).Resonant inductance in the resonant circuit and resonant capacitance are as energy accumulating device, and the setting state of resonant element is to be the alternately resonant inductance of self-resonance circuit or the load that resonant capacitance releases energy and formed to by the first output capacitance C1 and the second output capacitance C2.The boost power transducer of Fig. 3 (A) has also comprised a boosting unit (boost unit), comprise a boost inductance (boost choke) L1 in order to accept an AC-input voltage Vin, one rectification circuit is coupled between boost inductance and this resonant element, and the resonant capacitance Cr1 and the Cr2 of this resonant circuit of one the 3rd switch element S1, one the 4th switch element S2 difference cross-over connection.Rectification circuit is to comprise the first rectifier diode D3, the second rectifier diode D4 and the 3rd rectifier diode D8.In addition, the boost power transducer of Fig. 3 (A) also comprises two auxiliary rectifier diode D5 and D6.In order to reduce the conduction loss of boost power transducer, rectifier diode is to utilize to have than the low forward extremely fast reverse recovery diode of voltage VF (ultra fastrecovery diode) to finish.And in order to reduce the switch cost that switch element produced in the moment that switch switches, the setting state of resonant element is the state for diverter switch element Sa1 when the zero current and switch element Sa2, and the setting state of boosting unit is for switching the state of this switch element S1 and switch element S2 when the no-voltage.
In this preferred embodiment, switch element S1 and S2 are finished by a mos field effect transistor (MOSFET).Switch element Sa1 and Sa2 are a unidirectional switch arrangement, and it can be finished by a silicon controlled rectifier (SCR) or the insulated gate bipolar transistor (IGBT) with the quite high collection utmost point-emitter-base bandgap grading reverse bias.So, the diode D7 among Fig. 3 (A) is just removable.Another selection is to finish switch element Sa1 and Sa2 by general insulated gate bipolar transistor (IGBT) or MOSFET, and then single-way switch Sa2 must be connected in series diode D7.The boost power transducer of Fig. 3 (A) also optionally comprises an inductor L2, is used for eliminating the common-mode noise of boost power transducer.The boost power transducer of Fig. 3 (A) also can comprise a saturation type inductance L s, and it also is magnetic element optionally, in order to reduce the higher-order of oscillation (ringing) of resonant circuit.
In Fig. 5, the boost power transducer of Fig. 3 (A) is by a power-factor improvement controller (PFCcontroller) 1 control, to realize improving the purpose of power factor.Pfc controller 1 is switched discrete elements such as a signal waveform generator and a driving signal generating circuit to be made up of a PFC integrated circuit (PFC IC).About the circuit design of pfc controller 1, its not with the present invention have direct related, so do not discussed at this.Power-factor improvement transducer of the present invention also comprises a zero-voltage detector 2, and it is whether the collection utmost point-source voltage values of the collection utmost point-source voltage (also being the voltage of cross-over connection resonant capacitance Cr1 and the voltage of cross-over connection resonant capacitance Cr2) of accepting switch element S1 and S2 and sense switch element S1 and S2 is zero.Pfc controller 1 is to produce controlling signal in order to control switch element S1, S2, Sa1, Sa2 in order to the detection of the output voltage of complying with the boost power transducer and zero-voltage detector 2, so that driving switch element switches its state.Fig. 4 is the clock figure of each driving signal of power-factor improvement transducer of the present invention.The driving signal of switch element Sa1 and Sa2 is to do disjunction operation (logic And operation) by PFCIC sent in the pfc controller 1 driving signal and its frequency-eliminating signal N% to get therein, wherein N 〉=2.
Fig. 6 (a) explains orally the circuit operating mode of boost power transducer of the present invention at positive half cycle to Fig. 6 (1) legend.It is 12 operator schemes that boost power transducer of the present invention is divided in the circuit running of positive half cycle, and the boost power transducer carries out to 12 operator schemes shown in Fig. 6 (1) according to Fig. 6 (a) sequentially in the running system of positive half cycle.Now boost power transducer of the present invention being aided with diagram in the operator scheme of positive half cycle with following explanation explains orally in detail.
See also Fig. 6 (a), its existing boost converter with Fig. 2 is identical in the operating principle of discharge mode (dischargemode).The energy that is stored among boost inductance (boost choke) L1 can be released on output capacitance C1 and the C2 via D3, D8 and S2.
See also Fig. 6 (b).At this moment, single-way switch Sa1 switches and conducting when zero current, and the electric current of the resonant inductance Lr that flows through will increase in the mode of linearity.When the current i Lr of Lr increases to when identical with the current i L of the boost inductance L1 that flows through size, this operator scheme promptly comes to an end and ends.
See also Fig. 6 (c).At this moment, resonant capacitance Cr1 and resonant inductance L1 produce resonance, make the stored energy of resonant capacitance Cr1 be released into and approach zero.When this kind operator scheme ends at main switch S1 conducting.
See also Fig. 6 (d).When the voltage of resonant capacitance Cr1 levels off to zero the time, level off to zero with driving main switch S1 conducting by the voltage (also be the collection utmost point-source voltage of switch S 1) that detects resonant capacitance Cr1.And this operator scheme promptly starts from main switch S1 conducting, and the stored energy of resonant inductance Lr is released into output capacitance C2 by main switch S1.This operator scheme ends at the stored energy of resonant inductance Lr and discharges when finishing.Because switch S a1 is a single-way switch, even the driving signal of switch S a1 still is a high level, switch S a1 is in closing state, and is to close when zero current.
See also Fig. 6 (e).When this operator scheme opens and starts from the stored energy of resonant inductance Lr and be released into zero.This operator scheme is identical with the operating principle that existing boost converter operates in charge mode.This operator scheme ends at PFC when driving signal and closing.
See also Fig. 6 (f).This operator scheme opens when starting from main switch S1 conducting, and this moment, input inductance L1 charged to resonant capacitance Cr1.When the voltage of resonant capacitance Cr1 equaled output voltage V 0, this operator scheme promptly stopped.
See also Fig. 6 (g).When the voltage of resonant capacitance Cr1 equals output voltage V 0, its voltage will can not stop and can be output voltage V0 again toward rising.This kind operator scheme is same as the operator scheme of Fig. 6 (a).
See also Fig. 6 (h).This kind operator scheme is similar to the operator scheme of Fig. 6 (b), just in this operator scheme conducting be switch S a2 but not switch S a1.The same with the operator scheme of Fig. 6 (b), switch S a2 conducting and its electric current when zero current are that the mode with linearity increases.When the current i Lr that this operator scheme ends at resonant inductance Lr equals iL.
See also Fig. 6 (i).This kind operator scheme is similar to the operator scheme of Fig. 6 (c), and resonant capacitance Cr1 produces resonance via D3, C1, Sa2 and D7 and resonant inductance Lr, makes the stored energy of resonant capacitance Cr1 be released and levels off to zero.When this operator scheme ends at main switch S1 conducting.
See also Fig. 6 (j).This kind operator scheme class is in the operator scheme of Fig. 6 (d), levels off to by the voltage that detects resonant capacitance Cr1 (also for S1 the collection utmost point-source voltage) zero to drive main switch S1 conducting and open this operator scheme that begins.In this operator scheme, the stored energy of resonant inductance Lr is released into output capacitance C1 via S1, S2, D3, D4, D7, Sa2 linearity.This operator scheme ends at resonant inductance Lr energy and discharges when finishing.Because switch S a2 is single-way switch, even the driving signal of switch S a2 high level still, switch S a2 will close naturally, and is to close when zero current.
See also Fig. 6 (k).When this operator scheme opens and starts from the stored energy of resonant inductance Lr and be released into zero.This operator scheme is identical with operating principle and Fig. 6 (e) that existing boost converter operates in charge mode.This operator scheme ends at PFC when driving signal and closing, when just switch S 1 is closed.The operator scheme of the operator scheme of Fig. 6 (1) and Fig. 6 (f) is identical, does not give unnecessary details so do not add in addition at this.
The operator scheme of the negative half period of boost converter of the present invention is similar to the operator scheme of aforementioned positive half cycle, different is, when positive half cycle, utilize switch element S1 resonant inductance to be released energy to output capacitance, and negative half period utilize switch element S2 in the no-voltage conducting resonant inductance to be released energy to output capacitance in the no-voltage conducting.Therefore, the operator scheme of negative half period can be analogized according to the operator scheme of aforementioned positive half cycle, and we do not want it is done more deep discussion at this.
Fig. 7 to Figure 13 shows other embodiment of boost converter of the present invention with legend.The topo graph that Fig. 7 is based on Fig. 3 (A) to the topo graph of boost converter shown in Figure 13 is improved a little and is formed.The part rectifier cell of boost converter is to use biphase rectification element such as MOSFET instead to replace unidirectional rectifier cell such as the diode in the previous embodiment therein.According to the boost converter structure of Fig. 7 to Figure 13, can find that the conduction loss in the boost converter becomes lower.MOSFET act as a synchronous rectifier, the opportunity of its action be fall into behind the diode current flow and close before the time zone.As shown in the above description, power factor improving converter of the present invention is driven when utilizing switch to be in the state of zero current and no-voltage and changes the state of switch, adopts the rectifier cell that forward voltage is lower to form rectification circuit simultaneously.Therefore, power factor improving converter of the present invention can obtain a lower conduction loss and switch cost, less magnetic element size, lower electromagnetic interference and radio frequency interference and optimized whole efficiency.
Though the present invention is described in detail by the foregoing description, execute the craftsman and think and carry out modifying as all but still can appoint by person skilled in the art person, all belong to the scope that claim is protected.
Claims (20)
1. a boost power transducer, it comprises:
One resonant element, comprise one first switch element, an one second switch element and a resonant circuit, wherein one first end of this resonant circuit is connected in first end of this first switch element, second end of this first switch element is connected in first end of this second switch element, second end of this second switch element is connected in second end of this resonant circuit, and this resonant circuit comprises at least one first store energy element and one second store energy element, wherein first end of this first store energy element is connected in first end of this second store energy element to constitute this first end of this resonant circuit, second end of this first store energy element is connected in second end of this second store energy element to constitute this second end of this resonant circuit, and this resonant element is to be set alternately to release energy to a load from this first store energy element or this second store energy element; And
One boosting unit, comprise a boost inductance, one rectification circuit, one the 3rd switch element and one the 4th switch element, wherein first end of this boost inductance is connected in the positive pole of an alternating voltage to accept this alternating voltage, this rectification circuit is coupled between this boost inductance and this resonant element, one first end of the 3rd switch element is connected in this first end of this first store energy element, second end of the 3rd switch element is connected in this second end of this first store energy element, first end of the 4th switch element is connected in this first end of this second store energy element, and second end of the 4th switch element is connected in this second end of this second store energy element.
2. boost power transducer as claimed in claim 1, wherein this resonant circuit is to be set to the state that switches this first switch element and this second switch element when zero current, and this boosting unit is to be set to the state that switches the 3rd switch element and the 4th switch element when no-voltage.
3. boost power transducer as claimed in claim 1, wherein this load is to comprise one first output capacitance and one second output capacitance, first end of this first output capacitance is coupled in this rectification circuit, second end of this first output capacitance is connected in first end of this second output capacitance, second end of this second output capacitance is coupled in this rectification circuit, and this boosting unit also comprises an inductor, first end of this inductor is connected in the negative pole of this alternating voltage, second end of this inductor is connected in this first end of the 4th switch element, in order to eliminate a common-mode noise of this boost power transducer.
4. boost power transducer as claimed in claim 3, wherein this resonant circuit more comprises an inductance, first end of this inductance is connected in this second end of this first switch element and this first end of this second switch element, second end of this inductance is connected in this second end of this first output capacitance and this first end of this second output capacitance, this first store energy element and this second store energy element are all an electric capacity, and this first store energy element and this second store energy element also can be merged into an equivalent electric capacity.
5. boost power transducer as claimed in claim 4, wherein this first switch element and this second switch element are formed by a unidirectional switch arrangement.
6. boost power transducer as claimed in claim 5, wherein this unidirectional switch arrangement is a silicon controlled rectifier or is an insulated gate bipolar transistor.
7. boost power transducer as claimed in claim 5, wherein this unidirectional switch arrangement is an insulated gate bipolar transistor or is a mos field effect transistor, and this unidirectional switch arrangement also comprises a diode, the anode of this diode is connected in this second end of this second switch element, and the negative electrode of this diode is connected in this second end of this resonant circuit and this second end of this second output capacitance.
8. boost power transducer as claimed in claim 7 also comprises a full box-like inductance, is coupled between this inductance and this load of this resonant circuit, in order to reduce a higher-order of oscillation of this resonant circuit.
9. boost power transducer as claimed in claim 8, wherein this rectification circuit is to comprise one first rectifier cell, one second rectifier cell and one the 3rd rectifier cell, respectively this rectifier cell all extremely fast formed by one by reverse recovery diode or a mos field effect transistor, and first end of this first rectifier cell is connected in second end of this boost inductance and this first end of this first store energy element, second end of this first rectifier cell is connected in this first end of this first output capacitance, first end of this second rectifier cell is connected in this second end of this inductor of this boosting unit and this first end of this second store energy element, one second end of this second rectifier cell is connected in this second end of this first rectifier cell and this first end of this first output capacitance, one first end of the 3rd rectifier cell is connected in this second end of this second output capacitance, and second end of the 3rd rectifier cell is connected in this second end of this first store energy element, this second end of this second store energy element and the negative electrode of this diode.
10. boost power transducer as claimed in claim 9, also comprise one first auxiliary rectifier element and one second auxiliary rectifier element, and this first auxiliary rectifier element and this second auxiliary rectifier element all extremely fast reverse recovery diode or a mos field effect transistor are formed by one, first end of this first auxiliary rectifier element is connected in this first end of this first rectifier cell, this first end of this of this boost inductance second end and this first store energy element, second end of this first auxiliary rectifier element is connected in this first end of this first switch element, first end of this second auxiliary rectifier element is connected in this first end of this second rectifier cell, this second end of this inductor of this boosting unit and this first end of this second store energy element, second end of this second auxiliary rectifier element are connected in this second end of this first auxiliary rectifier element and this first end of this first switch element.
11. a power-factor improvement transducer, it comprises:
One resonant element, comprise one first switch element, an one second switch element and a resonant circuit, wherein first end of this resonant circuit is connected in first end of this first switch element, second end of this first switch element is connected in first end of this second switch element, second end of this second switch element is connected in second end of this resonant circuit, and this resonant circuit comprises at least one first store energy element and one second store energy element, wherein first end of this first store energy element is connected in first end of this second store energy element to constitute this first end of this resonant circuit, second end of this first store energy element is connected in second end of this second store energy element to constitute this second end of this resonant circuit, and this resonant element is to be set alternately to release energy to a load from this first store energy element or the second store energy element;
One boosting unit, comprise a boost inductance, one rectification circuit, one the 3rd switch element and one the 4th switch element, wherein first end of this boost inductance is connected in the positive pole of an alternating voltage to accept this alternating voltage, this rectification circuit is coupled between this boost inductance and this resonant element, first end of the 3rd switch element is connected in this first end of this first store energy element, second end of the 3rd switch element is connected in this second end of this first store energy element, first end of the 4th switch element is connected in this first end of this second store energy element, and second end of the 4th switch element is connected in this second end of this second store energy element; And
One power-factor improvement controller, be connected in this load, it is that a voltage of complying with cross-over connection the 3rd switch element sends a controlling signal when being zero and drives the 3rd switch element and change its state, and a voltage of complying with cross-over connection the 4th switch element sends a controlling signal when being zero and drives the 4th switch element and change its state.
12. power-factor improvement transducer as claimed in claim 11, also comprise a zero-voltage detector, its receive cross-over connection in a voltage of the 3rd switch element and cross-over connection in a voltage of the 4th switch element, and when a voltage of voltage of the 3rd switch element or the 4th switch element is zero, send a controlling signal to this power-factor improvement controller to drive the state that this power-factor improvement controller changes the 3rd switch element or the 4th switch element.
13. power-factor improvement transducer as claimed in claim 11, wherein this resonant circuit is to be set to the state that switches this first switch element and this second switch element when zero current, and this boosting unit is to be set to the state that switches the 3rd switch element and the 4th switch element when no-voltage.
14. power-factor improvement transducer as claimed in claim 11, wherein this load is to comprise one first output capacitance and one second output capacitance, first end of this first output capacitance is coupled in this rectification circuit, second end of this first output capacitance is connected in first end of this second output capacitance, second end of this second output capacitance is coupled in this rectification circuit, and this boosting unit also comprises an inductor, first end of this inductor is connected in the negative pole of this alternating voltage, second end of this inductor is connected in this first end of the 4th switch element, in order to eliminate a common-mode noise of this boost power transducer.
15. power-factor improvement transducer as claimed in claim 14, wherein this resonant circuit more comprises an inductance, first end of this inductance is connected in this second end of this first switch element and this first end of this second switch element, second end of this inductance is connected in this second end of this first output capacitance and this first end of this second output capacitance, this first store energy element and this second store energy element are all an electric capacity, and this first store energy element and this second store energy element also can be merged into an equivalent electric capacity.
16. power-factor improvement transducer as claimed in claim 15, wherein this first switch element and this second switch element are formed by a unidirectional switch arrangement.
17. power-factor improvement transducer as claimed in claim 16, wherein this unidirectional switch arrangement is an insulated gate bipolar transistor or is a mos field effect transistor, and this unidirectional switch arrangement also comprises a diode, the anode of this diode is connected in this second end of this second switch element, and the negative electrode of this diode is connected in this second end of this resonant circuit and this second end of this second output capacitance.
18. power-factor improvement transducer as claimed in claim 17 also comprises a full box-like inductance, is coupled between this inductance and this load of this resonant circuit, in order to reduce a higher-order of oscillation of this resonant circuit.
19. power-factor improvement transducer as claimed in claim 18, wherein this rectification circuit is to comprise one first rectifier cell, one second rectifier cell and one the 3rd rectifier cell, respectively this rectifier cell all extremely fast formed by one by reverse recovery diode or a mos field effect transistor, and first end of this first rectifier cell is connected in second end of this boost inductance and this first end of this first store energy element, second end of this first rectifier cell is connected in this first end of this first output capacitance, first end of this second rectifier cell is connected in this second end of this inductor of this boosting unit and this first end of this second store energy element, second end of this second rectifier cell is connected in this second end of this first rectifier cell and this first end of this first output capacitance, first end of the 3rd rectifier cell is connected in this second end of this second output capacitance, and second end of the 3rd rectifier cell is connected in this second end of this first store energy element, this second end of this second store energy element and the negative electrode of this diode.
20. power-factor improvement transducer as claimed in claim 19, also comprise one first auxiliary rectifier element and one second auxiliary rectifier element, and this first auxiliary rectifier element and this second auxiliary rectifier element all extremely fast reverse recovery diode or a mos field effect transistor are formed by one, first end of this first auxiliary rectifier element is connected in this first end of this first rectifier cell, this first end of this of this boost inductance second end and this first store energy element, second end of this first auxiliary rectifier element is connected in this first end of this first switch element, first end of this second auxiliary rectifier element is connected in this first end of this second rectifier cell, this second end of this inductor of this boosting unit and this first end of this second store energy element, second end of this second auxiliary rectifier element are connected in this second end of this first auxiliary rectifier element and this first end of this first switch element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB01118454XA CN1190884C (en) | 2001-05-30 | 2001-05-30 | Power factor improving converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB01118454XA CN1190884C (en) | 2001-05-30 | 2001-05-30 | Power factor improving converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1388633A CN1388633A (en) | 2003-01-01 |
| CN1190884C true CN1190884C (en) | 2005-02-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB01118454XA Expired - Fee Related CN1190884C (en) | 2001-05-30 | 2001-05-30 | Power factor improving converter |
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| Country | Link |
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| CN (1) | CN1190884C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2017409798A1 (en) * | 2017-04-10 | 2019-11-07 | Berner Fachhochschule | Efficient electric power conversion |
| CN108448888B (en) | 2018-04-10 | 2019-07-16 | 上海推拓科技有限公司 | Switching power circuit |
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2001
- 2001-05-30 CN CNB01118454XA patent/CN1190884C/en not_active Expired - Fee Related
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| Publication number | Publication date |
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| CN1388633A (en) | 2003-01-01 |
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