CN118829745A - 钙钛矿的顺序沉积 - Google Patents

钙钛矿的顺序沉积 Download PDF

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Publication number
CN118829745A
CN118829745A CN202380025422.1A CN202380025422A CN118829745A CN 118829745 A CN118829745 A CN 118829745A CN 202380025422 A CN202380025422 A CN 202380025422A CN 118829745 A CN118829745 A CN 118829745A
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CN
China
Prior art keywords
perovskite
halide
deposition
precursor
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380025422.1A
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English (en)
Chinese (zh)
Inventor
T·贝恩斯
N·博蒙特
J·贝斯特
L·M·佩雷斯
C·凯斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford Photovoltaics Ltd
Original Assignee
Oxford Photovoltaics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford Photovoltaics Ltd filed Critical Oxford Photovoltaics Ltd
Publication of CN118829745A publication Critical patent/CN118829745A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CN202380025422.1A 2022-03-11 2023-03-10 钙钛矿的顺序沉积 Pending CN118829745A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB2203452.4A GB202203452D0 (en) 2022-03-11 2022-03-11 Sequential deposition of perovskites
GB2203452.4 2022-03-11
PCT/GB2023/050577 WO2023170429A1 (en) 2022-03-11 2023-03-10 Sequential deposition of perovskites

Publications (1)

Publication Number Publication Date
CN118829745A true CN118829745A (zh) 2024-10-22

Family

ID=81254924

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380025422.1A Pending CN118829745A (zh) 2022-03-11 2023-03-10 钙钛矿的顺序沉积

Country Status (8)

Country Link
US (1) US20250268091A1 (cg-RX-API-DMAC7.html)
EP (1) EP4490336A1 (cg-RX-API-DMAC7.html)
JP (1) JP2025509409A (cg-RX-API-DMAC7.html)
KR (1) KR20240160196A (cg-RX-API-DMAC7.html)
CN (1) CN118829745A (cg-RX-API-DMAC7.html)
AU (1) AU2023232990A1 (cg-RX-API-DMAC7.html)
GB (1) GB202203452D0 (cg-RX-API-DMAC7.html)
WO (1) WO2023170429A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118910735A (zh) * 2024-07-17 2024-11-08 安徽工程大学 一种无铅双钙钛矿单晶发光材料及其制备方法和应用
CN118890941A (zh) * 2024-09-25 2024-11-01 深圳黑晶光电技术有限公司 一种钙钛矿层制备方法、叠层太阳能电池及制备方法
WO2026080973A1 (en) * 2024-10-14 2026-04-23 The University Of Queensland Tin perovskites, methods for preparation and applications therefor
KR102925103B1 (ko) * 2025-11-05 2026-02-06 충남대학교산학협력단 무기 페로브스카이트 박막의 제조 방법, 이의 제조 방법으로 제조된 무기 페로브스카이트 박막 및 이를 포함하는 페로브스카이트 태양전지

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201208793D0 (en) 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
US10069025B2 (en) 2012-09-18 2018-09-04 Oxford University Innovation Limited Optoelectronic device
GB201412201D0 (en) 2014-07-09 2014-08-20 Isis Innovation Two-step deposition process
GB201420488D0 (en) 2014-11-18 2014-12-31 Oxford Photovoltaics Ltd Photovoltaic device
WO2016198889A1 (en) 2015-06-12 2016-12-15 Oxford Photovoltaics Limited Photovoltaic device
GB201520972D0 (en) 2015-11-27 2016-01-13 Isis Innovation Mixed cation perovskite
CN109478596B (zh) 2016-08-03 2023-07-21 南洋理工大学 卤化物钙钛矿薄膜和包含其的太阳能电池及其形成方法
GB2577492B (en) 2018-09-24 2021-02-10 Oxford Photovoltaics Ltd Method of forming a crystalline or polycrystalline layer of an organic-inorganic metal halide perovskite
US10930494B2 (en) 2019-04-09 2021-02-23 Swift Solar Inc. Vapor phase transport system and method for depositing perovskite semiconductors

Also Published As

Publication number Publication date
EP4490336A1 (en) 2025-01-15
WO2023170429A1 (en) 2023-09-14
US20250268091A1 (en) 2025-08-21
AU2023232990A1 (en) 2024-09-05
GB202203452D0 (en) 2022-04-27
JP2025509409A (ja) 2025-04-11
KR20240160196A (ko) 2024-11-08

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