CN1187626A - High-energy electronic detector - Google Patents
High-energy electronic detector Download PDFInfo
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- CN1187626A CN1187626A CN 97100239 CN97100239A CN1187626A CN 1187626 A CN1187626 A CN 1187626A CN 97100239 CN97100239 CN 97100239 CN 97100239 A CN97100239 A CN 97100239A CN 1187626 A CN1187626 A CN 1187626A
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Abstract
A high-energy electronic detector is composed of semiconductor sensor, charge sensitive pre-amplifier, pulse shaper, primary amplifier, pulse amplitude analyzer, D/A converter and instrument characteristics detector connected to output of primary amplifier, all of which are conntected by direct coupling and integrated. Its advantages include high ratio of signal to noise, wide measurement range, effective monitor to working status of each units in the instrument, and high reliability.
Description
The present invention relates to a kind of high energy electron measurement mechanism, particularly measure the sniffer of high energy electron power spectrum.
High-energy electronic detector mainly is made up of circuit such as sensor, charge-sensitive preamplifier, pulse shaping and main amplifying circuit, pulse height analyzer, D/A converters.The problem that prior art exists mainly is that measuring accuracy and energy range index are all lower, and certain level breaks down in detection, when causing non-output signal or noise to increase, also can't judge cause.Its reason mainly is: the generation noise signal was too big after the signal passages through which vital energy circulates of charge-sensitive preamplifier was washed into shape, main amplifying circuit, even had buried in oblivion the high energy electron signal, so can't measure the low energy signal.On the other hand, noise signal is a random signal, the frequency band broad.Therefore, must design one overlap the device of observation circuit duty, to guarantee the reliability of measured value.
The purpose of this invention is to provide a kind of high-energy electronic detector that has broad energy measurement scope, can detect the each several part duty.
At the problem that exists in the prior art, the structure that the present invention adopts is: semiconductor Charged Particle Telescope of being made up of the ternary semiconductor detector and relevant electronics circuit, sensor and electronics circuit are contained in the same cabinet.Each detector output terminal links to each other with the input end of corresponding different charge-sensitive preamplifier respectively, the output terminal of each prime amplifier links to each other with corresponding pulse shaping part input end respectively, the output terminal of each pulse former links to each other with corresponding main amplifier part input end, the output terminal of each main amplifier part links to each other with the pulse height analyzer input end, the output terminal of pulse height analyzer part links to each other with the input end of D/A (D/A) converter part, has connected respectively in each main amplifier part and has been used to detect the instrument characteristic test section of respectively surveying the branch road working condition.The instrument characteristic test section comprises an amplifier that is used to amplify noise signal, the output of amplifier connects a rectification circuit, the output of rectification circuit links to each other with the base stage of an emitter follower, the emitter output noise signal level of emitter follower, the circuit of pulse shaping part and main amplifier section has adopted integrated circuit, has adopted DC coupling between at different levels more.
After adopting the present invention, when high-energy electronic detector is used for the space electronic spectral measurement, can recognizes the working condition of respectively surveying branch road in time, and improve signal to noise ratio (S/N ratio), enlarge the scope of measuring.
Fig. 1 is the functional-block diagram of high-energy electronic detector embodiment of the present invention.
Fig. 2 is the circuit diagram of noise measuring circuit in the frame principle figure shown in Figure 1.
Fig. 3 is pulse shaping part and a main amplifier circuit diagram partly in the frame principle figure shown in Figure 1.
Fig. 4 is the structural representation of semiconductor transducer part among Fig. 1.
Do an introduction in detail below in conjunction with 1,2,3,4 pairs of architectural features of the present invention of accompanying drawing and embodiment:
Fig. 1 be high-energy electronic detector embodiment of the present invention functional-block diagram, be the sensor 1 that constitutes by the ternary semiconductor detector and constitute with charge preamplifier part 2, pulse shaping part 3, main amplifier 4, pulse height analyzer 5, D/A conversion 6 and the noise measuring part 7 of the corresponding branch road of detector respectively.Semiconductor transducer part 1 is to be made of as shown in Figure 4 detector D1, D2 and D3, be the ternary semiconductor Charged Particle Telescope, in high energy electron incident sensor 1, in detector D1, D2 and D3, produce different energy losses, the charge signal of its output reflection electron energy relation; The charge signal of the reflection energy of a charge that charge preamplifier is partly exported semiconductor transducer 1 amplifies and is transformed into voltage pulse signal, this pulse signal passages through which vital energy circulates is washed into to be transported to main amplifier part 4 after 3 shapings of shape part are amplified and amplifies, signal after the amplification is transported to pulse height analyzer 5,5 pairs of amplifying signals of pulse height analyzer carry out the amplitude analysis, and different amplitudes are being represented the electronics of different-energy.The output pulse of pulse height analyzer 5 is converted to voltage signal through D/A change-over circuit 6, as long as write down the size of output voltage values, just can converse the counting rate of tested high energy electron.Because the present invention is mainly used in space exploration, if can't judge when therefore detection instrument of the present invention breaks down in the space, directly have influence on the reliability of result of detection, therefore the output terminal at amplifier section 4 has increased instrument characteristic test section 7, is used to judge the duty of respectively surveying branch road.
Fig. 2 is the circuit diagram of embodiment of the invention instrument characteristic test section.It comprises an amplifier A who is used to amplify noise signal, here amplifier A has adopted LT158, input signal is connected to the input end 13 of amplifier A through capacitor C 1 and resistance R 1 series arm, its output terminal 9-10 connects a rectification circuit through capacitor C4, between its input end 13 and the output terminal 9-10 and connect a resistance R 3 and capacitor C 2, R3 is used to adjust the enlargement factor of amplifier, C2 is the speed-up capacitor of signal, prevent the signal leading edge recoil, its link 11 and 12 is connected with a capacitor C3, with the noise of step-down amplifier itself.The end of link 11 connecting resistance R2, the other end ground connection of resistance R 2, the effect of resistance R 2 is to increase the circuit working electric current, makes the load capacity of circuit stronger.Another termination one rectification circuit of capacitor C4, it links to each other with the negative pole of commutation diode D1 and the positive pole of D2, the end of the negative pole connecting resistance R5 of diode D2, the positive pole of electrochemical capacitor E2 and the base stage of transistor T 1, the other end ground connection of the electrochemical capacitor E2 of diode D1, resistance R 5.Transistor T 1 constitutes the emitter follower circuit, its emitter connecting resistance R6 one end, and resistance R 6 other end connecting resistance R7 one ends and as output terminal out, the other end ground connection of resistance R 7, power positive end connects the collector of transistor T 1 through resistance R 4.Its collector also meets filter capacitor E1 and C5.
Fig. 3 is pulse shaping part and a main amplifier circuit diagram partly in the embodiment of the invention shown in Figure 1.Its circuit bank becomes: the base stage of transistor T 2 is an input end, and it joins through resistance R 8, capacitor C 6 couplings with the output signal from the prime amplifier part, and resistance R 10 scalable form the enlargement factor of circuit.Collector connects power positive end, emitter connects the negative pole of voltage stabilizing diode D3, the positive pole of stabilivolt D3 connects the base stage of transistor T 3 and an end of resistance R 9, the grounded emitter of the other end of resistance R 9 and transistor T 3, the collector of transistor T 3 connects the base stage of transistor T 8 and the negative pole of diode D4, diode D4 and D5 series connection, the positive pole of D5 links to each other with the emitter of transistor T 4 and the base stage of T7.The base stage of transistor T 4, T5 links to each other with the emitter of transistor T 6, the emitter of transistor T 4, T5 connects power positive end, the collector of transistor T 5 links to each other with the base stage of transistor T 6 and an end of resistance R 11, the grounded collector of the other end of resistance R 11 and transistor T 6, the collector of transistor T 7 connects power positive end, its emitter connects an end of resistance R 12, the other end of resistance R 12 is connected with an end of resistance R 13 and as an output terminal, the emitter of another termination transistor T 8 of resistance R 13, the grounded collector of transistor T 8.The base stage of main amplifier part transistor T 9 is an input end, its output terminal with the pulse shaping part links to each other with capacitor C 7 through resistance R 14, and link to each other with power positive end through resistance R 16, the collector of transistor T 9 and transistor T 11, the emitter of T12 and the collector of T14 connect power positive end, the emitter of transistor T 9 connects an end of the base stage and the resistance R 15 of transistor T 10, the positive pole of another terminating diode D6 of resistance R 15, the minus earth of D6, the grounded emitter of transistor T 10, its collector meets the base stage and the series diode D8 of transistor T 15, the negative pole of D7, the positive pole of D8 connects the base stage of the collector and the transistor T 14 of transistor T 11, the base stage of transistor T 11 and the base stage of T12, the emitter of T13 links to each other, the collector of transistor T 12 links to each other with the base stage of transistor T 13 and an end of resistance R 17, the other end ground connection of the collector of T13 and resistance R 17, the end of the emitter connecting resistance R18 of transistor T 14, the end of the other end connecting resistance R19 of resistance R 18 and as output terminal, the emitter of another termination transistor T 15 of resistance R 19, the grounded collector of transistor T 15.
The structural representation of semiconductor transducer part 1 as shown in Figure 4, be to constitute by semiconductor detector D1, D2, D3, it is the Au Si surface barrier detector of 300m that D1 adopts thickness, D2 and D3 adopt thickness to be the lithium-drifted silicon detector of 3500m, and the place ahead is established the thick aluminium matter light blocking layer of 15m and injected to prevent visible light.
Claims (4)
1. high-energy electronic detector, it comprises Charged Particle Telescope part that the ternary semiconductor detector constitutes and charge-sensitive preamplifier part, pulse shaping part, main amplifier part, pulse height analyzer part and the D/A converter part of joining with three tunnel detectors and order respectively, and the output terminal that it is characterized in that each main amplifier part is surveyed part with the special biopsy of an instrument respectively and is connected.
2. high-energy electronic detector according to claim 1, it is characterized in that noise measuring partly comprises an amplifier that is used to amplify noise signal, the output of amplifier connects a rectification circuit, the output of rectification circuit links to each other with the base stage of an emitter follower, the emitter output noise signal level of emitter follower.
3. high-energy electronic detector according to claim 1 and 2, it is characterized in that pulse shaping partly is an integrated circuit, its circuit structure is: transistor T 2 base stages are input end, its collector connects power positive end, emitter connects the negative pole of voltage stabilizing diode D3, the positive pole of stabilivolt D3 connects the base stage of transistor T 3 and an end of resistance R 9, the grounded emitter of the other end of resistance R 9 and transistor T 3, the collector of transistor T 3 connects the base stage of transistor T 8 and the negative pole of diode D4, diode D4 and D5 series connection, the positive pole of D5 links to each other with the emitter of transistor T 4 and the base stage of T7, transistor T 4, the base stage of T5 links to each other with the emitter of transistor T 6, transistor T 4, the emitter of T5 connects power positive end, the collector of transistor T 5 links to each other with the base stage of transistor T 6 and an end of resistance R 11, the grounded collector of the other end of resistance R 1 and transistor T 6, the collector of transistor T 7 connects power positive end, its emitter connects an end of resistance R 12, the other end of resistance R 12 is connected with an end of resistance R 13 and as an output terminal, the emitter of another termination transistor T 8 of resistance R 13, the grounded collector of transistor T 8.
4. high-energy electronic detector according to claim 1 and 2, it is characterized in that main amplifier partly is an integrated circuit, its circuit structure is: the base stage of transistor T 9 is an input end, its collector and transistor T 11, the emitter of T12 and the collector of T14 connect power positive end, the emitter of transistor T 9 connects an end of the base stage and the resistance R 15 of transistor T 10, the positive pole of another terminating diode D6 of resistance R 15, the D6 minus earth, the grounded emitter of transistor T 10, its collector meets the base stage and the series diode D8 of transistor T 15, the negative pole of D7, the positive pole of D8 connects the base stage of the collector and the transistor T 14 of transistor T 11, the base stage of transistor T 11 and the base stage of T12, the emitter of T13 links to each other, the collector of transistor T 12 is connected with the base stage of transistor T 13 and an end of resistance R 17, the other end ground connection of the collector of T13 and resistance R 17, the end of the emitter connecting resistance R18 of transistor T 14, the end of the other end connecting resistance R19 of resistance R 18 and as output terminal, the emitter of another termination transistor T 15 of resistance R 19, the electrode grounding of transistor T 15.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97100239 CN1046593C (en) | 1997-01-10 | 1997-01-10 | High-energy electronic detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97100239 CN1046593C (en) | 1997-01-10 | 1997-01-10 | High-energy electronic detector |
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| Publication Number | Publication Date |
|---|---|
| CN1187626A true CN1187626A (en) | 1998-07-15 |
| CN1046593C CN1046593C (en) | 1999-11-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 97100239 Expired - Fee Related CN1046593C (en) | 1997-01-10 | 1997-01-10 | High-energy electronic detector |
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| CN (1) | CN1046593C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405733A (en) * | 2015-12-25 | 2016-03-16 | 中国航空工业集团公司北京航空制造工程研究所 | Backscattered electron receiving sensor and observation system for electron beam processing process |
| CN105738941A (en) * | 2014-12-12 | 2016-07-06 | 中国科学院空间科学与应用研究中心 | Space energy particle energy spectrum measurement device based on electrostatic deflection |
-
1997
- 1997-01-10 CN CN 97100239 patent/CN1046593C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105738941A (en) * | 2014-12-12 | 2016-07-06 | 中国科学院空间科学与应用研究中心 | Space energy particle energy spectrum measurement device based on electrostatic deflection |
| CN105738941B (en) * | 2014-12-12 | 2019-05-17 | 中国科学院国家空间科学中心 | A kind of spectral measurement device of the dimensional energy particle based on electrostatic deflection |
| CN105405733A (en) * | 2015-12-25 | 2016-03-16 | 中国航空工业集团公司北京航空制造工程研究所 | Backscattered electron receiving sensor and observation system for electron beam processing process |
| CN105405733B (en) * | 2015-12-25 | 2017-06-06 | 中国航空工业集团公司北京航空制造工程研究所 | Backscattered electron receives the observing system of sensor and electron beam process process |
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| Publication number | Publication date |
|---|---|
| CN1046593C (en) | 1999-11-17 |
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