CN118695737A

CN118695737A - Display device and method of manufacturing the same

Info

Publication number: CN118695737A
Application number: CN202410337970.4A
Authority: CN
Inventors: 白栋圭; 金民锡
Original assignee: Samsung Display Co Ltd
Current assignee: Samsung Display Co Ltd
Priority date: 2023-03-24
Filing date: 2024-03-25
Publication date: 2024-09-24

Abstract

The present application relates to a display device and a method of manufacturing the display device. In a method of manufacturing a display device, the method comprising: positioning a bank comprising a first central opening and a second central opening on an upper substrate; positioning a first quantum dot layer in the first central opening; positioning a second quantum dot layer in the second central opening; and irradiating light having a wavelength of 520nm or more to the second quantum dot layer.

Description

Display device and method of manufacturing the same

Cross Reference to Related Applications

The present application claims priority and rights of korean patent application No. 10-2023-0039174 filed on the korean intellectual property agency on month 3 of 2023, korean patent application No. 10-2023-0059902 filed on month 5 of 2023 and korean patent application No. 10-2023-0105628 filed on month 11 of 2023, each of which is incorporated herein by reference in its entirety.

Technical Field

Aspects of one or more embodiments relate to an apparatus and method.

Background

Mobility-based electronic devices are widely used. Recently, in addition to small electronic devices such as mobile phones, tablet Personal Computers (PCs) have been widely used as mobile electronic devices.

The mobile electronic device includes a display for providing visual information, such as images or video, to a user to support various functions. Recently, as other components for driving a display have been miniaturized, the proportion of the display in an electronic device has gradually increased, and a structure capable of being bent at an angle from a planar state has been developed.

The above information disclosed in this background section is only for enhancement of understanding of the background art and, therefore, the information discussed in this background section does not necessarily form the prior art.

Disclosure of Invention

Aspects of one or more embodiments relate to an apparatus and method, and for example, to a display apparatus and a method of manufacturing a display apparatus.

The display device may use color filters and quantum dot materials to provide a clear image. In this case, color reproducibility of light passing through the quantum dot material and the color filter may be important in forming an image similar to a real object. Aspects of one or more embodiments include a display device for providing a clear image and a method of manufacturing the display device.

Additional aspects will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the presented embodiments.

According to one or more embodiments, a method of manufacturing a display device includes: positioning a bank comprising a first central opening and a second central opening on an upper substrate; positioning a first quantum dot layer in the first central opening; positioning a second quantum dot layer in the second central opening; and irradiating light having a wavelength of 520nm or more to the second quantum dot layer.

According to some embodiments, the method may further comprise: positioning the lamp facing the upper substrate; and positioning a filter between the lamp and the second quantum dot layer.

According to some embodiments, the filter may be configured to transmit light having a wavelength of 520nm or more.

According to some embodiments, the lamp may be configured to emit white light.

According to some embodiments, the method may further comprise positioning a blocking member between the lamp and the first quantum dot layer.

According to some embodiments, the intensity of light may be 5lux or greater and 40lux or less.

According to some embodiments, the time range of irradiating light to the second quantum dot layer may be 70 hours or more to 100 hours or less.

According to some embodiments, the second quantum dot layer may include quantum dots including AIGS cores.

According to some embodiments, the first and second quantum dot layers may be provided into the first and second central openings, respectively, by using an inkjet printing method.

According to some embodiments, the method may further comprise positioning a color filter layer between the upper substrate and the dykes.

According to some embodiments, the method may further include positioning a capping layer over the first quantum dot layer and the second quantum dot layer.

According to some embodiments, a method of manufacturing a display device includes: positioning a bank comprising a first central opening and a second central opening on the light emitting panel; positioning a first quantum dot layer in the first central opening; positioning a second quantum dot layer in the second central opening; and irradiating light having a wavelength of 520nm or more to the second quantum dot layer.

According to some embodiments, the method may further comprise: positioning the lamp to face the light emitting panel; and positioning a filter between the lamp and the second quantum dot layer.

According to some embodiments, the lamp may be configured to emit white light.

According to some embodiments, a display device includes: a display panel including sub-pixels; and a color panel positioned on the display panel and including quantum dot layers positioned to correspond to the subpixels, wherein one of the quantum dot layers includes quantum dots including an AIGS core, wherein the AIGS core includes at least one of In_xGa_(1-x)P、AgIn_xGa_(1-x)S₂、AgInS₂、AgGaS₂、CuInS₂、CuInSe₂、CuGaS₂、CuGaSe₂、ZnSe and ZnTe _xSe_(1-x) (wherein x is a rational number greater than 0 and less than 1).

According to some embodiments, the light passing through the portion of the color panel where one quantum dot layer is located may be green.

According to some embodiments, the decay time τ of light passing through one quantum dot layer may be 30 or more and 80 or less.

According to some embodiments, the display device may further include a capping layer positioned on the quantum dot layer.

According to some embodiments, the display device may further include a color filter positioned to correspond to the quantum dot layer.

Other aspects, features, and characteristics of some embodiments of the present disclosure will become more apparent from the accompanying drawings, claims, and detailed description.

These general and specific embodiments may be implemented using systems, methods, computer programs, or combinations thereof.

Drawings

The above and other aspects, features and characteristics of particular embodiments will become more apparent from the following description taken in conjunction with the accompanying drawings in which:

fig. 1 is a perspective view illustrating a display device according to some embodiments;

fig. 2 is a cross-sectional view schematically illustrating the display device of fig. 1 according to some embodiments;

fig. 3 is a cross-sectional view illustrating a portion of a display device according to some embodiments;

fig. 4A-4C are cross-sectional views illustrating a method of manufacturing the color panel of fig. 3 according to some embodiments;

FIG. 4D is a graph showing the wavelength and intensity of light passing through the color filter of FIG. 4C, according to some embodiments;

FIG. 4E is a cross-sectional view illustrating a method of manufacturing the color panel of FIG. 3, according to some embodiments;

fig. 4F is a cross-sectional view illustrating a method of manufacturing a display device according to some embodiments;

fig. 5 is a cross-sectional view illustrating a display device according to some embodiments;

fig. 6A to 6D are cross-sectional views illustrating a method of manufacturing the display device of fig. 5 according to some embodiments;

Fig. 7 is a graph showing an absorption increase rate and an efficiency increase rate between the display device of fig. 3 or 5 and the existing display device;

FIG. 8 is a graph showing absorbance for each wavelength of the display device of FIG. 3 or FIG. 5 according to some embodiments; and

Fig. 9A and 9B are graphs showing the intensity of light over time when light is irradiated to the second quantum dot layer according to some embodiments.

Detailed Description

Reference will now be made in detail to aspects of some embodiments, some of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, embodiments according to the present disclosure may have different forms and should not be construed as limited to the descriptions set forth herein. Accordingly, only the embodiments are described below by referring to the drawings to explain aspects of the present specification. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. Throughout this disclosure, the expression "at least one of a, b, and c" means all of a alone, b alone, c alone, both a and b, both a and c, both b and c, a, b, and c, or any combination or variation thereof.

As the present disclosure is susceptible of various modifications and alternative embodiments, specific embodiments have been shown in the drawings and will be described in detail. The effects and features of the present disclosure and methods for achieving them will be elucidated with reference to the embodiments described in more detail below with reference to the accompanying drawings. However, the present disclosure is not limited to the following embodiments, and may be embodied in various forms.

Hereinafter, embodiments will be described in more detail with reference to the drawings, wherein identical or corresponding elements are denoted by the same reference numerals throughout, and repetitive description thereof will be omitted.

Although the terms "first," "second," etc. may be used to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element.

As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

It will be understood that the terms "comprises" and "comprising," are intended to indicate the presence of features or elements described in the specification, and are not intended to exclude the possibility that one or more other features or elements may be present or added.

It will be further understood that when a layer, region, or component is referred to as being "on" another layer, region, or component, it can be directly on the other layer, region, or component, or be indirectly on the other layer, region, or component with intervening layers, regions, or components therebetween.

The dimensions of the components in the figures may be exaggerated or reduced for convenience of explanation. For example, since the sizes and thicknesses of elements in the drawings are arbitrarily shown for convenience of explanation, the present disclosure is not limited thereto.

In the following embodiments, the x-axis, the y-axis, and the z-axis are not limited to three axes of a rectangular coordinate system, and can be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other.

While particular embodiments may be implemented differently, the particular process sequence may vary from that described. For example, two consecutively described processes may be performed substantially simultaneously, or may be performed in an order reverse to the order described.

Fig. 1 is a perspective view illustrating a display device according to some embodiments.

Referring to fig. 1, a display apparatus 1 may display an image. The display device 1 may display an image by a plurality of sub-pixels located in the display area DA. Each sub-pixel of the display device 1 may be a region that may emit light of a specific color. The display device 1 may display an image by using light emitted from a plurality of sub-pixels. For example, the sub-pixel may emit red, green, or blue light. Alternatively, the sub-pixels may emit red, green, blue or white light.

The non-display area NDA may at least partially surround the display area DA. According to some embodiments, the non-display area NDA may completely surround the display area DA (e.g., outside the periphery or footprint of the display area DA). The non-display area NDA may be an area where an image is not displayed.

As shown in fig. 1, the display area DA may have a polygonal shape including a quadrangular shape. For example, the display area DA may have a rectangular shape having a horizontal length greater than a vertical length, a rectangular shape having a horizontal length less than a vertical length, or a square shape. However, embodiments according to the present disclosure are not limited thereto. For example, according to some embodiments, the display area DA may have more than four sides and/or have one or more curved sides or edges. Alternatively, the display area DA may have any of various shapes such as an elliptical shape or a circular shape. According to some embodiments, the display device 1 may include a light emitting panel 10, a color panel 20, and a filling layer 30. The light emitting panel 10, the filler layer 30, and the color panel 20 may be stacked in a thickness direction (e.g., z direction).

The display device 1 having the above structure may be included in a mobile phone, a television, an advertisement board, a monitor, a tablet Personal Computer (PC), or a laptop computer.

Fig. 2 is a cross-sectional view schematically illustrating the display device of fig. 1.

Referring to fig. 2, the display apparatus 1 may include a first subpixel PX1, a second subpixel PX2, and a third subpixel PX3. The first, second, and third sub-pixels PX1, PX2, and PX3 may be sub-pixels emitting light of different colors. For example, the first subpixel PX1 may emit red light Lr, the second subpixel PX2 may emit green light Lg, and the third subpixel PX3 may emit blue light Lb.

The display device 1 may include a light emitting panel 10, a color panel 20, and a filling layer 30. The light emitting panel 10 may include a lower substrate 100 and light emitting devices LE. The light emitting device LE may be, for example, an organic light emitting diode. According to some embodiments, each of the first, second, and third sub-pixels PX1, PX2, and PX3 may include a light emitting device LE. For example, the first subpixel PX1 may include the first light emitting device LE1. The first light emitting device LE1 may be a first organic light emitting diode. The second subpixel PX2 may include a second light emitting device LE2. The second light emitting device LE2 may be a second organic light emitting diode. The third subpixel PX3 may include a third light emitting device LE3. The third light emitting device LE3 may be a third organic light emitting diode.

The first, second and third light emitting devices LE1, LE2 and LE3 may emit light of the same color. According to some embodiments, the first, second, and third light emitting devices LE1, LE2, and LE3 may emit blue light.

The color panel 20 may include a top substrate 400 and a filter unit FP. According to some embodiments, the filter unit FP may include a first filter unit FP1, a second filter unit FP2, and a third filter unit FP3. The light emitted by the first light emitting device LE1 may be emitted as red light Lr through the first filter unit FP 1. The light emitted by the second light emitting device LE2 may be emitted as green light Lg through the second filter unit FP 2. The light emitted by the third light emitting device LE3 may be emitted as blue light Lb through the third filter unit FP3.

The filter unit FP may include a functional layer and a color filter layer. According to some embodiments, the functional layer may include a first quantum dot layer, a second quantum dot layer, and a transmissive layer. According to some embodiments, the color filter layer may include a first color filter, a second color filter, and a third color filter. The first filter unit FP1 may include a first quantum dot layer and a first color filter. The second filter unit FP2 may include a second quantum dot layer and a second color filter. The third filter unit FP3 may include a transmissive layer and a third color filter.

The filter unit FP may be directly on the upper substrate 400. In this case, when the filter unit FP is "directly on the upper substrate 400", this may mean that the color panel 20 is manufactured by directly forming the first, second, and third filter units FP1, FP2, and FP3 on the upper substrate 400. Next, the color panel 20 may be adhered to the light emitting panel 10 such that the first, second, and third filter units FP1, FP2, and FP3 face the first, second, and third light emitting devices LE1, LE2, and LE3, respectively.

The filler layer 30 may be located between the light emitting panel 10 and the color panel 20. That is, the filler layer 30 may be above the light emitting panel 10 and below the color panel 20. The filler layer 30 may be used to attach the light emitting panel 10 to the color panel 20. According to some embodiments, the filler layer 30 may include a thermosetting or photocurable filler.

Fig. 3 is a cross-sectional view illustrating a portion of a display device according to some embodiments. Fig. 3 is a cross-sectional view taken along line A-A' of fig. 1.

Referring to fig. 3, the display apparatus 1 may include a first subpixel PX1, a second subpixel PX2, and a third subpixel PX3 in the display area DA. The first, second, and third sub-pixels PX1, PX2, and PX3 may emit different light. For example, the first subpixel PX1 may emit red light, the second subpixel PX2 may emit green light, and the third subpixel PX3 may emit blue light.

According to some embodiments, the display device 1 may comprise further sub-pixels (e.g. any suitable number of sub-pixels depending on the design and size of the display device 1). Although the first, second, and third sub-pixels PX1, PX2, and PX3 are adjacent to each other in fig. 3, according to some embodiments, the first, second, and third sub-pixels PX1, PX2, and PX3 may not be adjacent to each other.

The display device 1 may include a light emitting panel 10, a color panel 20, and a filling layer 30. The light emitting panel 10 may include a lower substrate 100 and a light emitting device positioned on the lower substrate 100 and including an emission layer 220. The light emitting device may be an organic light emitting diode. According to some embodiments, the light emitting panel 10 may include a first organic light emitting diode OLED1, a second organic light emitting diode OLED2, and a third organic light emitting diode OLED3 on the lower substrate 100. The first, second, and third organic light emitting diodes OLED1, OLED2, and OLED3 may include an emission layer 220.

The stacked structure of the light emitting panel 10 will now be described in more detail. According to some embodiments, the light emitting panel 10 may include a lower substrate 100, a first buffer layer 111, a bias electrode BSM, a second buffer layer 112, a thin film transistor TFT, a storage capacitor Cst, a gate insulating layer 113, an interlayer insulating layer 115, a planarization layer 118, a light emitting device, and an encapsulation layer 300. The thin film transistor TFT may include a semiconductor layer Act, a gate electrode GE, a source electrode SE, and a drain electrode DE. The storage capacitor Cst may include a first electrode CE1 and a second electrode CE2.

The lower substrate 100 may include a glass material, a ceramic material, a metal material, or a flexible or bendable material. When the lower substrate 100 is flexible or bendable, the lower substrate 100 may include a polymer resin such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. The lower substrate 100 may have a single-layer or multi-layer structure including the above materials, and when the lower substrate 100 has a multi-layer structure, the lower substrate 100 may further include an inorganic layer. According to some embodiments, the lower substrate 100 may have a structure including an organic material, an inorganic material, and an organic material.

A barrier layer may be further disposed between the lower substrate 100 and the first buffer layer 111. The barrier layer may prevent, reduce, or minimize penetration of impurities or contaminants, etc., from the lower substrate 100 into the semiconductor layer Act. The barrier layer may include an inorganic material such as an oxide or nitride, an organic material, or a combination of an organic material and an inorganic material, and may have a single-layer or multi-layer structure including an inorganic material and an organic material.

The bias electrode BSM may be positioned on the first buffer layer 111 to correspond to the thin film transistor TFT. According to some embodiments, a voltage may be applied to the bias electrode BSM. In addition, the bias electrode BSM may prevent external light from reaching the semiconductor layer Act. Therefore, characteristics of the thin film transistor TFT can be stabilized. The bias electrode BSM may be omitted when necessary.

The semiconductor layer Act may be located on the second buffer layer 112. The semiconductor layer Act may include amorphous silicon or polycrystalline silicon. According to some embodiments, the semiconductor layer Act may include an oxide of at least one material selected from the group consisting of indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), aluminum (Al), cesium (Cs), cerium (Ce), and zinc (Zn). In some embodiments, the semiconductor layer Act may be formed of a Zn oxide-based material, such as Zn oxide, in-Zn oxide, or Ga-In-Zn oxide. According to some embodiments, the semiconductor layer Act may be formed of an In-Ga-Zn-O (IGZO), in-Sn-Zn-O (ITZO), or In-Ga-Sn-Zn-O (IGTZO) semiconductor including a metal such as indium (In), gallium (Ga), or tin (Sn) In ZnO. The semiconductor layer Act may include a channel region, and source and drain regions on both sides of the channel region. The semiconductor layer Act may have a single-layer or multi-layer structure.

The gate electrode GE may be located on the semiconductor layer Act with the gate insulating layer 113 therebetween. The gate electrode GE may at least partially overlap with the semiconductor layer Act. The gate electrode GE may include molybdenum (Mo), aluminum (Al), copper (Cu), or titanium (Ti), and may have a single-layer or multi-layer structure. For example, the gate electrode GE may have a single layer structure including Mo. The first electrode CE1 of the storage capacitor Cst may be located on the same layer as the gate electrode GE. The first electrode CE1 and the gate electrode GE may include the same material.

Although the gate electrode GE of the thin film transistor TFT and the first electrode CE1 of the storage capacitor Cst are separately positioned in fig. 3, the storage capacitor Cst may overlap the thin film transistor TFT. In this case, the gate electrode GE of the thin film transistor TFT may be used as the first electrode CE1 of the storage capacitor Cst.

The interlayer insulating layer 115 may be disposed to cover the gate electrode GE and the first electrode CE1 of the storage capacitor Cst. The interlayer insulating layer 115 may include silicon oxide (SiO ₂), silicon nitride (SiN _x), silicon oxynitride (SiON), aluminum oxide (Al ₂O₃), titanium oxide (TiO ₂), tantalum oxide (Ta ₂O₅), hafnium oxide (HfO ₂), or zinc oxide (ZnO _x). The zinc oxide (ZnOx) may include zinc oxide (ZnO) and/or zinc peroxide (ZnO ₂).

The second electrode CE2, the source electrode SE, and the drain electrode DE of the storage capacitor Cst may be located on the interlayer insulating layer 115. Each of the second electrode CE2, the source electrode SE, and the drain electrode DE of the storage capacitor Cst may include a conductive material such as Mo, al, cu, or Ti, and may have a single-layer or multi-layer structure including the above materials. For example, each of the second electrode CE2, the source electrode SE, and the drain electrode DE may have a multi-layer structure including Ti/Al/Ti. The source electrode SE and the drain electrode DE may be connected to a source region or a drain region of the semiconductor layer Act through contact holes.

The second electrode CE2 and the first electrode CE1 of the storage capacitor Cst overlap each other (with the interlayer insulating layer 115 therebetween) to constitute the storage capacitor Cst. In this case, the interlayer insulating layer 115 may serve as a dielectric layer of the storage capacitor Cst.

The planarization layer 118 may be positioned on the second electrode CE2, the source electrode SE, and the drain electrode DE of the storage capacitor Cst. The planarization layer 118 may have a single-layer or multi-layer structure formed of an organic material, and may provide a flat top surface. Planarization layer 118 may include benzocyclobutene (BCB), polyimide, hexamethyldisiloxane (HMDSO), general purpose polymers such as polymethyl methacrylate (PMMA) or Polystyrene (PS), polymer derivatives having phenolic groups, acrylic-based polymers, imide-based polymers, aryl ether-based polymers, amide-based polymers, fluorinated polymers, p-xylyl polymers, vinyl alcohol-based polymers, or blends thereof.

The light emitting device may be located on the planarization layer 118. The light emitting device may include a pixel electrode, an emission layer 220, and an opposite electrode 230. According to some embodiments, the first, second, and third organic light emitting diodes OLED1, OLED2, and OLED3 may be located on the planarization layer 118. The first, second, and third organic light emitting diodes OLED1, OLED2, and OLED3 may include first, second, and third pixel electrodes 210R, 210G, and 210B, respectively. According to some embodiments, the first, second, and third organic light emitting diodes OLED1, OLED2, and OLED3 may commonly include an emission layer 220 and an opposite electrode 230.

The first, second and third pixel electrodes 210R, 210G and 210B may be located on the planarization layer 118. Each of the first, second, and third pixel electrodes 210R, 210G, and 210B may be connected to a thin film transistor TFT. Each of the first, second, and third pixel electrodes 210R, 210G, and 210B may be a (semi) transmissive electrode or a reflective electrode. In some embodiments, each of the first, second, and third pixel electrodes 210R, 210G, and 210B may include a reflective layer formed of Ag, mg, al, pt, pd, au, ni, nd, ir, cr or a compound thereof and a transparent or semitransparent electrode layer formed on the reflective layer. The transparent or semitransparent electrode layer may include at least one selected from the group consisting of Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), zinc oxide (ZnO), indium oxide (In ₂O₃), indium Gallium Oxide (IGO), and Aluminum Zinc Oxide (AZO). According to some embodiments, each of the first, second, and third pixel electrodes 210R, 210G, and 210B may be formed of ITO/Ag/ITO.

The pixel defining film 119 may be located on the planarization layer 118. The pixel defining film 119 may include an opening through which central portions of the first, second, and third pixel electrodes 210R, 210G, and 210B are exposed, respectively. The pixel defining film 119 may cover edges of the first, second, and third pixel electrodes 210R, 210G, and 210B. The pixel defining film 119 may increase a distance between an edge of each of the first, second, and third pixel electrodes 210R, 210G, and 210B and the opposite electrode 230 on the first, second, and third pixel electrodes 210R, 210G, and 210B to prevent arcing or the like from occurring at the edge of each of the first, second, and third pixel electrodes 210R, 210G, and 210B. The pixel defining film 119 may be formed of at least one organic insulating material selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenolic resin by using spin coating or the like.

The emission layers 220 of the first, second, and third organic light emitting diodes OLED1, OLED2, and OLED3 may include organic materials including fluorescent or phosphorescent materials that emit red, green, blue, or white light. The emission layer 220 may be formed of a low molecular weight organic material or a high molecular weight organic material. Functional layers such as a Hole Transport Layer (HTL), a Hole Injection Layer (HIL), an Electron Transport Layer (ETL), or an Electron Injection Layer (EIL) may be optionally further located under or over the emission layer 220. Although the emission layer 220 is integrally disposed over the first, second, and third pixel electrodes 210R, 210G, and 210B in fig. 3, the present disclosure is not limited thereto, and various modifications may be made. For example, the emission layer 220 may be positioned to correspond to each of the first, second, and third pixel electrodes 210R, 210G, and 210B.

Although the emission layer 220 may include layers integrally disposed over the first, second, and third pixel electrodes 210R, 210G, and 210B as described above, according to some embodiments, the emission layer 220 may include layers patterned to correspond to each of the first, second, and third pixel electrodes 210R, 210G, and 210B. In any case, the emissive layer 220 may be a first color emissive layer. According to some embodiments, the first color emission layer may be integrally disposed on the first, second, and third pixel electrodes 210R, 210G, and 210B, or may be patterned to correspond to each of the first, second, and third pixel electrodes 210R, 210G, and 210B. The first color emission layer may emit light of a first wavelength band, for example, light having a wavelength of about 450nm to about 495 nm.

The opposite electrode 230 may be positioned on the emission layer 220 to correspond to the first, second, and third pixel electrodes 210R, 210G, and 210B. The opposite electrode 230 may be integrally provided in a plurality of organic light emitting diodes. According to some embodiments, the opposite electrode 230 may be a transparent or semitransparent electrode, and may include a metal thin film having a low work function including lithium (Li), calcium (Ca), aluminum (Al), silver (Ag), magnesium (Mg), or a compound thereof, or a material having a multi-layered structure such as LiF/Ca or LiF/Al. In addition, a Transparent Conductive Oxide (TCO) film such as ITO, IZO, znO or In ₂O₃ may be further located on the metal thin film.

According to some embodiments, the first light may be generated in the first emission area EA1 of the first organic light emitting diode OLED1 and may be emitted to the outside. The first emission area EA1 may be defined as a portion of the first pixel electrode 210R exposed through the opening of the pixel defining film 119. The second light may be generated in the second emission area EA2 of the second organic light emitting diode OLED2 and may be emitted to the outside. The second emission area EA2 may be defined as a portion of the second pixel electrode 210G exposed through the opening of the pixel defining film 119. The third light may be generated in the third emission area EA3 of the third organic light emitting diode OLED3 and may be emitted to the outside. The third emission area EA3 may be defined as a portion of the third pixel electrode 210B exposed through the opening of the pixel defining film 119.

The first, second and third emission areas EA1, EA2 and EA3 may be spaced apart from each other. The portion of the display area DA other than the first, second, and third emission areas EA1, EA2, and EA3 may be a non-emission area. The first, second and third emission areas EA1, EA2 and EA3 may be divided by non-emission areas. In a plan view, the first, second, and third emission areas EA1, EA2, and EA3 may be arranged in any of various arrangements such as a stripe arrangement or a pentile arrangement. In a plan view, each of the shape of the first emission area EA1, the shape of the second emission area EA2, and the shape of the third emission area EA3 may be any one of a polygonal shape, a circular shape, and an elliptical shape.

A spacer for preventing or reducing damage of the mask may be further provided on the pixel defining film 119. The spacers may be integrally provided with the pixel defining film 119. For example, the spacer and the pixel defining film 119 may be formed simultaneously in the same process using a halftone mask process.

The encapsulation layer 300 may be positioned on the light emitting device and may cover the light emitting device. Since the first, second and third organic light emitting diodes OLED1, OLED2 and OLED3 may be relatively easily damaged by external moisture or oxygen, the first, second and third organic light emitting diodes OLED1, OLED2 and OLED3 may be covered and protected by the encapsulation layer 300. The encapsulation layer 300 may cover the display area DA and may extend to the outside of the display area DA. The encapsulation layer 300 may include at least one organic encapsulation layer and at least one inorganic encapsulation layer. For example, the encapsulation layer 300 may include a first inorganic encapsulation layer 310, an organic encapsulation layer 320, and a second inorganic encapsulation layer 330.

Because the first inorganic encapsulation layer 310 extends along the structure under the first inorganic encapsulation layer 310, the top surface of the first inorganic encapsulation layer 310 may not be planar. The organic encapsulation layer 320 may cover the first inorganic encapsulation layer 310, and unlike the first inorganic encapsulation layer 310, the organic encapsulation layer 320 may have a substantially flat top surface.

Each of the first and second inorganic encapsulation layers 310 and 330 may include at least one inorganic material selected from aluminum oxide (Al ₂O₃), titanium oxide (TiO ₂), tantalum oxide (Ta ₂O₅), hafnium oxide (HfO ₂), zinc oxide (ZnO _x), silicon oxide (SiO ₂), silicon nitride (SiN _x), and silicon oxynitride (SiON). The organic encapsulation layer 320 may include a polymer-based material. Examples of polymer-based materials may include acrylic, epoxy, polyimide, and polyethylene. According to some embodiments, the organic encapsulation layer 320 may include an acrylate.

Even when a crack occurs in the encapsulation layer 300, the crack may not be connected between the first inorganic encapsulation layer 310 and the organic encapsulation layer 320 or between the organic encapsulation layer 320 and the second inorganic encapsulation layer 330 due to the above multilayer structure. Accordingly, the formation of paths through which external moisture, contaminants, or oxygen infiltrates into the display area DA may be prevented, reduced, or minimized. According to some embodiments, other layers, such as capping layers, may be located between the first inorganic encapsulation layer 310 and the opposite electrode 230, if necessary.

The color panel 20 may include a top substrate 400, a color filter layer 500, a refractive layer RL, a first capping layer CL1, a bank 600, a functional layer 700, and a second capping layer CL2. The upper substrate 400 may be positioned on the lower substrate 100, and the light emitting device is between the upper substrate 400 and the lower substrate 100. The upper substrate 400 may be positioned on the first, second, and third organic light emitting diodes OLED1, OLED2, and OLED 3.

The upper substrate 400 may include a central region CA overlapping the light emitting device. According to some embodiments, the central area CA may include a first central area CA1, a second central area CA2, and a third central area CA3. In a plan view, the first central region CA1 may overlap the first organic light emitting diode OLED1 and/or the first emission region EA 1. The second central region CA2 may overlap the second organic light emitting diode OLED2 and/or the second emission region EA2 in a plan view. In a plan view, the third central region CA3 may overlap the third organic light emitting diode OLED3 and/or the third emission region EA 3.

The upper substrate 400 may include glass, metal, or polymer resin. When the upper substrate 400 is flexible or bendable, the upper substrate 400 may include a polymer resin such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. According to some embodiments, the upper substrate 400 may have a multilayer structure including two layers each including such a polymer resin and a barrier layer including an inorganic material such as silicon oxide (SiO ₂), silicon nitride (SiN _x), or silicon oxynitride (SiON) between the two layers.

The color filter layer 500 may be located on the bottom surface of the upper substrate 400 in a direction from the upper substrate 400 to the lower substrate 100. The color filter layer 500 may include a first color filter 510, a second color filter 520, and a third color filter 530. The first color filter 510 may be located in the first central area CA 1. The second color filter 520 may be located in the second central area CA 2. The third color filter 530 may be located in the third central area CA 3. Each of the first, second, and third color filters 510, 520, and 530 may be formed of a photosensitive resin material. Each of the first, second, and third color filters 510, 520, and 530 may include a dye that generates a unique color. The first color filter 510 may transmit only light having a wavelength of 630nm to 780nm, the second color filter 520 may transmit only light having a wavelength of 495nm to 570nm, and the third color filter 530 may transmit only light having a wavelength of 450nm to 495 nm.

The color filter layer 500 may reduce reflection of external light of the display device 1. For example, when external light reaches the first color filter 510, only light having a preset wavelength may pass through the first color filter 510, and light having other wavelengths may be absorbed by the first color filter 510. Accordingly, of the external light incident on the display device 1, only light having a preset wavelength may pass through the first color filter 510, and a portion of the light may be reflected by the opposite electrode 230 and/or the first pixel electrode 210R under the first color filter 510 and may then be emitted back to the outside. Of the external light incident on the position where the first subpixel PX1 is located, only a portion is reflected to the outside, and thus, reflection of the external light can be reduced. The same description may be applied to the second color filter 520 and the third color filter 530.

The first, second, and third color filters 510, 520, and 530 may overlap each other. The first, second, and third color filters 510, 520, and 530 may overlap each other between any one of the central areas CA and the other of the central areas CA. For example, the first, second, and third color filters 510, 520, and 530 may overlap each other between the first and second central areas CA1 and CA 2. In this case, the third color filter 530 may be located between the first central area CA1 and the second central area CA 2. The first color filter 510 may extend from the first central area CA1 and overlap the third color filter 530. The second color filter 520 may extend from the second central area CA2 and overlap the third color filter 530.

The first, second, and third color filters 510, 520, and 530 may overlap between the second and third central areas CA2 and CA 3. The first color filter 510 may be positioned between the second central area CA2 and the third central area CA 3. The second color filter 520 may extend from the second central area CA2 and overlap the first color filter 510. The third color filter 530 may extend from the third central area CA3 and overlap the first color filter 510.

The first, second, and third color filters 510, 520, and 530 may overlap each other between the third central area CA3 and the first central area CA 1. The second color filter 520 may be positioned between the third central area CA3 and the first central area CA 1. The third color filter 530 may extend from the third central area CA3 and overlap the second color filter 520. The first color filter 510 may extend from the first central area CA1 and overlap the second color filter 520.

The first, second, and third color filters 510, 520, and 530 may overlap each other to constitute the light blocking unit BP. Accordingly, the color filter layer 500 may prevent or reduce color mixing even without a separate light blocking member.

According to some embodiments, the third color filter 530 may be first stacked on the upper substrate 400. This is because the third color filter 530 may reduce the reflectivity of the display device 1 by absorbing a portion of external light incident on the upper substrate 400, and the user hardly sees the light reflected by the third color filter 530.

The refractive layer RL may be located in the central region CA. The refractive layer RL may be located in each of the first central region CA1, the second central region CA2, and the third central region CA 3. The refractive layer RL may comprise an organic material. According to some embodiments, the refractive index of the refractive layer RL may be smaller than the refractive index of the first capping layer CL 1. According to some embodiments, the refractive index of the refractive layer RL may be smaller than the refractive index of the color filter layer 500. Thus, the refractive layer RL may collect light.

The first capping layer CL1 may be located on the refractive layer RL and the color filter layer 500. According to some embodiments, the first capping layer CL1 may be located between the color filter layer 500 and the functional layer 700. The first capping layer CL1 may protect the refractive layer RL and the color filter layer 500. The first capping layer CL1 may prevent or reduce penetration of impurities such as external moisture and/or air and damage the refractive layer RL and/or the color filter layer 500. The first capping layer CL1 may include an inorganic material.

The bank 600 may be located on the first capping layer CL 1. According to some embodiments, the bank 600 may be located on the upper substrate 400. The bank 600 may be located on a bottom surface of the upper substrate 400 facing the lower substrate 100. The bank 600 may include an organic material. The bank 600 may include a light blocking material to serve as a light blocking layer when necessary. The light blocking material may include, for example, at least one of a black pigment, a black dye, black particles, and metal particles.

The dike 600 may include a plurality of openings. For example, a central opening COP may be formed in the dike 600. The central opening COP may overlap with the central area CA. According to some embodiments, the plurality of central openings COP may overlap with the central area CA. For example, the first central opening COP1 may overlap the first central area CA 1. The second central opening COP2 may overlap the second central area CA 2. The third central opening COP3 may overlap with the third central area CA 3.

The functional layer 700 may be located in the central opening COP. The functional layer 700 may fill the central opening COP. According to some embodiments, the functional layer 700 may include at least one of a color conversion material and a diffuser. According to some embodiments, the color conversion material may be a quantum dot. According to some embodiments, the functional layer 700 may include a first quantum dot layer 710, a second quantum dot layer 720, and a transmissive layer 730.

The first quantum dot layer 710 may be located in the first central opening COP1. The first quantum dot layer 710 may overlap the first central region CA 1. The first quantum dot layer 710 may fill the first central opening COP1. The first quantum dot layer 710 may overlap with the first emission area EA 1. The first subpixel PX1 may include a first organic light emitting diode OLED1 and a first quantum dot layer 710.

The first quantum dot layer 710 may convert light of a first wavelength band generated by the emission layer 220 on the first pixel electrode 210R into light of a second wavelength band. For example, when light having a wavelength of 450nm to 495nm is generated by the emission layer 220 on the first pixel electrode 210R, the first quantum dot layer 710 may convert the light into light having a wavelength of 630nm to 780 nm. Accordingly, in the first subpixel PX1, light having a wavelength of 630nm to 780nm may be emitted to the outside through the upper substrate 400. According to some embodiments, the first quantum dot layer 710 may include first quantum dots QD1, a first scatterer SC1, and a first base resin BR1. The first quantum dots QD1 and the first scatterers SC1 may be dispersed in the first base resin BR1.

The second quantum dot layer 720 may be located in the second central opening COP2. The second quantum dot layer 720 may overlap the second central region CA 2. The second quantum dot layer 720 may fill the second central opening COP2. The second quantum dot layer 720 may overlap the second emission area EA 2. The second subpixel PX2 may include a second organic light emitting diode OLED2 and a second quantum dot layer 720.

The second quantum dot layer 720 may convert light of the first wavelength band generated by the emission layer 220 on the second pixel electrode 210G into light of a third wavelength band. For example, when light having a wavelength of 450nm to 495nm is generated by the emission layer 220 on the second pixel electrode 210G, the second quantum dot layer 720 may convert the light into light having a wavelength of 495nm to 570nm and a peak wavelength of 520nm to 550 nm. Accordingly, in the second subpixel PX2, light having a wavelength of 495nm to 570nm may be emitted to the outside through the upper substrate 400. According to some embodiments, the second quantum dot layer 720 may include second quantum dots QD2, a second scatterer SC2, and a second base resin BR2. The second quantum dots QD2 and the second scatterers SC2 may be dispersed in the second base resin BR2.

The transmissive layer 730 may be located in the third central opening COP3. The transmissive layer 730 may overlap the third central area CA 3. The transmissive layer 730 may fill the third central opening COP3. The transmissive layer 730 may overlap the third emission area EA 3. The third subpixel PX3 may include a third organic light emitting diode OLED3 and a transmissive layer 730.

The transmissive layer 730 may emit light generated by the emission layer 220 on the third pixel electrode 210B to the outside without wavelength conversion. For example, when light having a wavelength of 450nm to 495nm is generated by the emission layer 220 on the third pixel electrode 210B, the transmission layer 730 may emit the light to the outside without wavelength conversion. According to some embodiments, the transmissive layer 730 may include a third diffuser SC3 and a third base resin BR3. The third scatterer SC3 may be dispersed in the third base resin BR3. According to some embodiments, the transmissive layer 730 may not include quantum dots.

At least one of the first quantum dot QD1 and the second quantum dot QD2 may include an AIGS material. The quantum dots may have a size of several nanometers, and the wavelength of the converted light may vary according to the size of the quantum dots.

According to some embodiments, the core of the quantum dot may comprise an AIGS material. For example, the core of the quantum dot may include In_xGa_(1-x)P、AgIn_xGa_(1-x)S₂、AgInS₂、AgGaS₂、CuInS₂、CuInSe₂、CuGaS₂、CuGaSe₂、ZnSe、ZnTe_xSe_(1-x) or any combination thereof. Here, x may be a rational number in a range of more than 0 and less than 1.

According to some embodiments, the quantum dots may have a core/shell structure in which one quantum dot surrounds another quantum dot. The interface between the core and the shell may have a concentration gradient in which the concentration of the element in the shell gradually decreases toward the center.

According to some embodiments, the quantum dot may have a core-shell structure including a core including nanocrystals and a shell surrounding the core. The shell of the quantum dot may serve as a protective layer that maintains semiconductor properties by preventing chemical deformation of the core and/or a charge layer that imparts electrophoretic properties to the quantum dot. The shell may have a single-layer or multi-layer structure. The interface between the core and the shell may have a concentration gradient in which the concentration of the element in the shell gradually decreases toward the center. Examples of shells of quantum dots may include oxides of metals or non-metals, semiconductor compounds, and combinations thereof.

Examples of metal or non-metal oxides may include, but are not limited to, binary compounds such as SiO₂、Al₂O₃、TiO₂、ZnO、MnO、Mn₂O₃、Mn₃O₄、CuO、FeO、Fe₂O₃、Fe₃O₄、CoO、Co₃O₄ or NiO and ternary compounds such as MgAl ₂O₄、CoFe₂O₄、NiFe₂O₄ or CoMn ₂O₄.

Examples of semiconductor compounds may include, but are not limited to CdS, cdSe, cdTe, znS, znSe, znTe, znSeS, znTeS, gaAs, gaP, gaSb, hgS, hgSe, hgTe, inAs, inP, inGaP, inSb, alAs, alP and AlSb.

The quantum dots may have a Full Width Half Maximum (FWHM) of the emission wavelength spectrum of about 45nm or less, preferably about 40nm or less, and more preferably about 30nm or less. Within this range, color purity or color reproducibility can be improved. In addition, since light emitted through the quantum dots can be emitted in all directions, an optical viewing angle can be relatively improved.

In addition, the quantum dot has a shape generally used in the art, and is not particularly limited. More specifically, the quantum dots may have a spherical shape, a pyramid shape, a multi-arm shape, a cubic nanoparticle shape, a nanotube shape, a nanowire shape, a nanofiber shape, or a nano-plate particle shape.

The color of light emitted from the quantum dots may be controlled according to the particle size, and thus, the quantum dots may have any of various emission colors such as blue, red, or green.

The first, second, and third scatterers SC1, SC2, and SC3 may scatter light, thereby emitting more light. The first, second, and third scatterers SC1, SC2, and SC3 may increase light extraction efficiency. At least one of the first, second, and third scatterers SC1, SC2, and SC3 may include a metal or a metal oxide for uniformly scattering light. For example, at least one of the first, second, and third scatterers SC1, SC2, and SC3 may be at least one of TiO₂、ZrO₂、Al₂O₃、In₂O₃、ZnO、SnO₂、Sb₂O₃ and ITO. Further, at least one of the first, second, and third scatterers SC1, SC2, and SC3 may have a refractive index of 1.5 or more. Accordingly, the light extraction efficiency of the functional layer 700 may be improved. In some embodiments, at least one of the first scatterer SC1, the second scatterer SC2, and the third scatterer SC3 may be omitted.

Each of the first base resin BR1, the second base resin BR2, and the third base resin BR3 may include a light transmitting material. For example, at least one of the first base resin BR1, the second base resin BR2, and the third base resin BR3 may include a polymer resin such as photo-curable acrylic, benzocyclobutene (BCB), or Hexamethyldisiloxane (HMDSO).

The second capping layer CL2 may be located on the bank 600 and the functional layer 700. The second capping layer CL2 may protect the bank 600 and the functional layer 700. The second capping layer CL2 may prevent or reduce penetration of impurities such as external moisture and/or air and damage the bank 600 and/or the functional layer 700. The second capping layer CL2 may include an inorganic material.

In the display device 1 as described above, light of the second wavelength band may be emitted from the first subpixel PX1 to the outside, light of the third wavelength band may be emitted from the second subpixel PX2 to the outside, and light of the first wavelength band may be emitted from the third subpixel PX3 to the outside. That is, the display device 1 can display a full-color image.

The filler layer 30 may be located between the light emitting panel 10 and the color panel 20. According to some embodiments, the fill layer 30 may be located between the encapsulation layer 300 and the bank 600. The filler layer 30 may serve as a buffer against external pressure or the like. The filler layer 30 may include a filler. According to some embodiments, the filler layer 30 may include a thermosetting or photocurable filler. The filler may be formed of an organic material such as methyl siloxane, phenyl siloxane, or polyimide. However, embodiments according to the present disclosure are not limited thereto, and the filler may include an organic sealing agent such as polyurethane resin, epoxy resin, or acrylic resin, or an inorganic sealing agent such as silicone.

According to some embodiments, any one of the light emitting panel 10 and the color panel 20 may include a post spacer 800. For example, according to some embodiments, the color panel 20 may include post spacers 800. According to some embodiments, the light emitting panel 10 may include a post spacer 800. According to some embodiments, the post spacer 800 may not be located between the light emitting panel 10 and the color panel 20. In this case, only the filling layer 30 may be located between the light emitting panel 10 and the color panel 20. The detailed description will be provided below assuming that the color panel 20 includes the column spacers 800. The column spacer 800 may be located on the bank 600 and may face the lower substrate 100. The column spacer 800 may space the encapsulation layer 300 from the bank 600. The column spacers 800 may pass through the filler layer 30. The post spacer 800 may include an organic material. According to some embodiments, the post spacer 800 may comprise an acrylic material.

The column spacers 800 may uniformly space the light emitting device and the functional layer 700 from each other. Accordingly, the filling layer 30 may be positioned in the display area DA with a uniform thickness. In other words, the distance between the first organic light emitting diode OLED1 and the first quantum dot layer 710 may be substantially the same as the distance between the second organic light emitting diode OLED2 and the second quantum dot layer 720. In addition, the distance between the second organic light emitting diode OLED2 and the second quantum dot layer 720 may be substantially the same as the distance between the third organic light emitting diode OLED3 and the transmissive layer 730. When the column spacer 800 is omitted unlike in the present embodiment, the plurality of light emitting devices and the functional layer may not maintain uniform intervals. For example, the thickness of the filling layer 30 in the first central region CA1 may be different from the thickness of the filling layer 30 in the second central region CA 2. In this case, the brightness of the light emitted by the first organic light emitting diode OLED1 and passing through the filling layer 30 overlapping the first central area CA1 may be different from the brightness of the light emitted by the second organic light emitting diode OLED2 and passing through the filling layer 30 overlapping the second central area CA 2. According to some embodiments, the pillar spacers 800 may be arranged through the filling layer 30 such that the light emitting devices and the functional layer 700 are spaced apart from each other at intervals (e.g., uniform intervals). Further, the filling layer 30 may prevent or reduce a phenomenon in which brightness varies according to a position in the display area DA.

Fig. 4A is a cross-sectional view illustrating a method of manufacturing the color panel of fig. 3.

Referring to fig. 4A, the upper substrate 400 may be located in a chamber, and then the color filter layer 500 may be located on the upper substrate 400. In this case, the first, second, and third color filters 510, 520, and 530 may be located on each region of the upper substrate 400, and at least two of the first, second, and third color filters 510, 520, and 530 may overlap each other on the region of the upper substrate 400.

After forming the color filter layer 500, the refractive layer RL may be positioned, and then the first capping layer CL1 may be positioned on the refractive layer RL and the color filter layer 500. Next, the bank 600 may be located on the first capping layer CL 1. The bank 600 may define a first central opening COP1, a second central opening COP2, and a third central opening COP3 corresponding to the respective sub-pixels.

Fig. 4B is a cross-sectional view illustrating a method of manufacturing the color panel of fig. 3.

Referring to fig. 4B, materials for forming the first quantum dot layer 710, the second quantum dot layer 720, and the transmissive layer 730 may be provided into the first, second, and third central openings COP1, COP2, and COP3, respectively, through the nozzle NS by using an inkjet printing method. In this case, the plurality of nozzles NS may be provided to correspond to the first, second, and third center openings COP1, COP2, and COP3, respectively. In this case, the nozzle NS may supply materials (which include quantum dots of different sizes) for forming the first and second quantum dot layers 710 and 720 into the first and second central openings COP1 and COP2, respectively. Further, one of the plurality of nozzles NS may provide a material for forming the transmissive layer 730, which does not include quantum dots, into the third central opening COP3.

After the first, second, and transmissive layers 710, 720, and 730 are located in the first, second, and third central openings COP1, COP2, and COP3, respectively, the first, second, and transmissive layers 710, 720, and 730 may be cured by irradiating Ultraviolet (UV) light having a wavelength of about 395nm to the first, second, and transmissive layers 710, 720, and 730 under an atmospheric pressure (e.g., 1 atm) in a nitrogen (N ₂) atmosphere in the chamber.

Fig. 4C is a cross-sectional view illustrating a method of manufacturing the color panel of fig. 3. Fig. 4D is a graph showing the wavelength and intensity of light passing through the filter of fig. 4C.

Referring to fig. 4C and 4D, light may be irradiated onto the cured first quantum dot layer 710, second quantum dot layer 720, and transmissive layer 730 by using a lamp LS. In this case, the lamp LS may emit white light. Further, the intensity of the light emitted by the lamp LS may be 5lux or more and 40lux or less. In this case, when the intensity of light emitted by the lamp LS is less than 5lux, the energy applied to the second quantum dot layer 720 may be too small. When the intensity of light emitted by the lamp LS exceeds 40lux, the energy applied to the second quantum dot layer 720 may be too large and may damage the material in the second quantum dot layer 720.

In this case, the blocking member BC and the optical filter FT may be positioned between the lamp LS and the first, second, and transmissive layers 710, 720, and 730. For example, the blocking member BC may be positioned between the lamp LS and the first quantum dot layer 710 and between the lamp LS and the transmissive layer 730, and the filter FT may be positioned between the lamp LS and the second quantum dot layer 720. In this case, the blocking member BC may completely block the light emitted by the lamp LS. The filter FT may transmit only light having a specific wavelength among the light emitted by the lamp LS. For example, as shown in fig. 4D, the filter FT may transmit a majority of light having a wavelength of about 520nm or longer.

As described above, the light passing through the filter FT may be provided only to the second quantum dot layer 720. In this case, light may be irradiated to the second quantum dot layer 720 for 70 hours or more to 100 hours or less. For example, when such light is irradiated to the second quantum dot layer 720 for 96 hours, the color reproduction rate may be increased from 125.0% to about 0.6% in the DCI-P3 evaluation, and the color reproduction rate may be increased from 89.7% to about 0.4% to about 90.1% in the BT2020 evaluation, and the color matching rate may be increased from 87.4% to about 0.4% to about 87.9% in the BT2020 evaluation, as compared to the case where such light is not irradiated to the second quantum dot layer 720. Accordingly, it was found that when light having a specific wavelength is applied to the second quantum dot layer 720 for a certain time, the color matching rate and the color reproduction rate increase.

Fig. 4E is a cross-sectional view illustrating a method of manufacturing the color panel of fig. 3.

Referring to fig. 4E, after forming the first quantum dot layer 710, the second quantum dot layer 720, and the transmissive layer 730, the second capping layer CL2 may be formed by low temperature chemical vapor deposition. Next, the color panel 20 may be manufactured by heat treatment. Next, the post spacers 800 may be located on the second capping layer CL2.

Fig. 4F is a cross-sectional view illustrating a method of manufacturing a display device according to some embodiments.

Referring to fig. 4F, the manufactured color panel 20 may be attached to the light emitting panel 10. In this case, the filler layer 30 may be located between the light emitting panel 10 and the color panel 20. The filling layer 30 formed as a resin may be located on the color panel 20 or the light emitting panel 10, and then the color panel 20 may be attached to the light emitting panel 10.

In the display device 1 manufactured as described above, the color reproducibility of light passing through the second quantum dot layer 720 and the lifetime of the display device 1 can be increased.

Fig. 5 is a cross-sectional view illustrating a display device according to some embodiments.

Referring to fig. 5, the display device 1 may include a light emitting panel 10, a color panel 20, and a filling layer 30.

The light emitting panel 10 may include a lower substrate 100 and a light emitting device positioned on the lower substrate 100 and including an emission layer 220. The light emitting device may be an organic light emitting diode. According to some embodiments, the light emitting panel 10 may include a first organic light emitting diode OLED1, a second organic light emitting diode OLED2, and a third organic light emitting diode OLED3 on the lower substrate 100. The first, second, and third organic light emitting diodes OLED1, OLED2, and OLED3 may include an emission layer 220. The light emitting panel 10 may include a lower substrate 100, a first buffer layer 111, a bias electrode BSM, a second buffer layer 112, a thin film transistor TFT, a storage capacitor Cst, a gate insulating layer 113, an interlayer insulating layer 115, a planarization layer 118, a light emitting device, and a package layer 300. The light emitting device may include first, second and third pixel electrodes 210R, 210G and 210B, an emission layer 220 and an opposite electrode 230 positioned to correspond to the first, second and third organic light emitting diodes OLED1, OLED2 and OLED3, respectively. In addition, the first, second, and third organic light emitting diodes OLED1, OLED2, and OLED3 may define first, second, and third emission areas EA1, EA2, and EA3, respectively. The layers and elements of the light emitting panel 10 are the same as or similar to those described above with reference to fig. 3, and thus, detailed description thereof will be omitted.

The color panel 20 may include a top substrate 400, a color filter layer 500, a refractive layer RL, a first capping layer CL1, a second capping layer CL2, a bank 600, and a functional layer 700. In this case, the functional layer 700 may include a first quantum dot layer 710, a second quantum dot layer 720, and a transmissive layer 730. The upper substrate 400 may include a central region CA overlapping the light emitting device. According to some embodiments, the central area CA may include a first central area CA1, a second central area CA2, and a third central area CA3. In this case, the color filter layer 500 may include first, second, and third color filters 510, 520, and 530 located in the first, second, and third central areas CA1, CA2, and CA3, respectively. In this case, the first, second, and third color filters 510, 520, and 530 may overlap each other. The first, second, and third color filters 510, 520, and 530 may overlap each other between any one of the central areas CA and the other of the central areas CA. The first, second, and third color filters 510, 520, and 530 may overlap each other to constitute the light blocking unit BP. The first quantum dot layer 710 may fill the first central opening COP1, and may include the first quantum dots QD1, the first scatterer SC1, and the first base resin BR1. Further, the second quantum dot layer 720 may fill the second central opening COP2, and may include the second quantum dots QD2, the second scatterer SC2, and the second base resin BR2. The transmissive layer 730 may fill the third central opening COP3, and may include a third diffuser SC3 and a third base resin BR3. The color panel 20 is similar to the color panel 20 described with reference to fig. 3, and thus a detailed description thereof will be omitted. In this case, the filling layer 30 may be located between the first capping layer CL1 and the second capping layer CL2.

Fig. 6A is a cross-sectional view illustrating a method of manufacturing the display device of fig. 5.

Referring to fig. 6A, a bank 600 may be located on the light emitting panel 10. In this case, the bank 600 may include openings corresponding to the first, second, and third emission areas EA1, EA2, and EA3, respectively.

Fig. 6B is a cross-sectional view illustrating a method of manufacturing the display device of fig. 5.

Referring to fig. 6B, the first quantum dot layer 710, the second quantum dot layer 720, and the transmissive layer 730 may be located in the first, second, and third central openings COP1, COP2, and COP3 of the bank 600 through the nozzle NS, respectively, by using an inkjet printing method. In this case, a plurality of nozzles NS may be provided to correspond to the first, second, and third central openings COP1, COP2, and COP3, respectively. Accordingly, the first quantum dot layer 710, the second quantum dot layer 720, and the transmissive layer 730 may be located in the first, second, and third central openings COP1, COP2, and COP3, respectively. Next, as described with reference to fig. 4B, the first quantum dot layer 710, the second quantum dot layer 720, and the transmissive layer 730 may be cured.

Fig. 6C is a cross-sectional view illustrating a method of manufacturing the display device of fig. 5.

Referring to fig. 6C, light may be emitted to the first quantum dot layer 710, the second quantum dot layer 720, and the transmissive layer 730 through the lamp LS. In this case, the lamp LS may emit white light, and the blocking member BC may block light from traveling to the first quantum dot layer 710 and the transmissive layer 730. Further, the filter FT may transmit a large portion of light having a specific wavelength or more among white light of the lamp LS. In this case, the time for which the lamp LS operates, the intensity of light emitted by the lamp LS, and the range of wavelengths of light passing through the filter FT are the same as those described with reference to fig. 4C, and thus, detailed descriptions thereof will be omitted.

Fig. 6D is a cross-sectional view illustrating a method of manufacturing the display device of fig. 5.

Referring to fig. 6D, a second capping layer CL2 may be located on the cured first quantum dot layer 710, the second quantum dot layer 720, and the transmissive layer 730. In addition, the filling layer 30 may be located on the second capping layer CL 2. According to some embodiments, the filling layer 30 may not be located on the second capping layer CL2, but may be located on the second capping layer CL2 after being located on the first capping layer CL 1. For convenience of explanation, the detailed description will be made below assuming that the filling layer 30 is located on the second capping layer CL 2.

The color filter layer 500 may be positioned on the upper substrate 400. The first, second, and third color filters 510, 520, and 530 may be positioned to correspond to the first, second, and third central areas CA1, CA2, and CA3, respectively. In this case, the first, second, and third color filters 510, 520, and 530 may overlap each other to constitute the light blocking unit BP. Further, the refractive layer RL may be located on the color filter layer 500, and then the first capping layer CL1 may be located on the refractive layer RL.

The upper substrate 400, the color filter layer 500, the refractive layer RL, and the first capping layer CL1 may be located on the filling layer 30, and the first capping layer CL1 may be fixed to the second capping layer CL2 by using the filling layer 30.

Accordingly, the efficiency of the display device 1 may be improved, the color reproducibility of light passing through the second quantum dot layer 720 may be improved, and the lifetime of the display device 1 may be increased.

Fig. 7 is a graph showing an absorption increase rate and an efficiency increase rate between the display device of fig. 3 or 5 and the existing display device.

Referring to fig. 7, since the display device 1 uses quantum dots including an AIGS core, the light absorption rate may be higher than that of the existing quantum dots. For example, depending on the thickness of the quantum dot, the optical absorption of the core of the quantum dot may be at least 10% higher than the optical absorption of the InP core. Accordingly, the display device 1 including the quantum dot having the AIGS core can efficiently absorb light. Further, since the display device 1 uses quantum dots including AIGS cores, efficiency can be improved. For example, depending on the thickness of the quantum dots, the efficiency of the display device 1 using quantum dots including an AIGS core may be at least 20% higher than the efficiency of the display device using quantum dots including an InP core.

Fig. 8 is a graph showing an absorbance for each wavelength of the second quantum dot layer of fig. 3 or 5.

Referring to fig. 8, the absorbance of each wavelength of the second quantum dot layer may be higher than that of an existing second quantum dot layer including quantum dots such as InP cores. That is, when the second quantum dot layer includes quantum dots having AlGS cores, the absorbance of light having a wavelength of 550nm or less may be higher than that of light having a wavelength of 550nm or less of the existing quantum dot layer.

Fig. 9A and 9B are graphs showing the intensity of light over time when light is irradiated to the second quantum dot layer.

Referring to fig. 9A and 9B, as described above, when light emitted by the lamp is transmitted through the filter and irradiated to the second quantum dot layer, the decay time of light of each wavelength may be longer than that when light is not irradiated.

In the above case, the experimental method may include irradiating laser light to the second quantum dot layer to excite electrons of the quantum dots and measuring light generated from the quantum dots outside the second quantum dot layer. In this case, the graphs of fig. 9A and 9B show the relative intensity (arbitrary unit) of light measured outside the second quantum dot layer over time. The laser light may have a short wavelength of about 300nm, and the wavelengths of light generated from the quantum dots, passing through the second quantum dot layer, and then being measured may be 520nm and 534nm.

It has been found that, assuming that the wavelengths of light generated from the quantum dots and passing through the second quantum dot layer are 520nm and 534nm, the decay time of light of each wavelength when light is irradiated to the second quantum dot layer is longer than that when light is not irradiated.

From the graphs of fig. 9A and 9B obtained by the above experiment, τ of the decay time of light emitted from the second quantum dot layer including the AIGS quantum dot core can be calculated. In this case, τ of the decay time of the light emitted from the second quantum dot layer can be calculated by a separate procedure by receiving data according to time and the measured relative intensity of the light. In this case, τ of the decay time of the light emitted from the second quantum dot layer refers to the average lifetime of the second quantum dot layer (for example, the average lifetime of the light emitted from the second quantum dot layer when the light is irradiated to the second quantum dot layer).

In the above case, τ of the decay time of light emitted from the second quantum dot layer including the AIGS quantum dot core may be about 30 or more and 60 or less. Further, the decay time τ of light emitted from the second quantum dot layer that includes the AIGS quantum dot core and to which light is irradiated may be about 45 or more and 80 or less.

The display device according to some embodiments may improve green matching rate and improve energy efficiency.

According to the method of manufacturing a display device according to some embodiments, a display device having relatively improved color matching rate and relatively improved energy efficiency may be manufactured.

An electronic or electrical device and/or any other related device or component according to some embodiments of the invention described herein may be implemented using any suitable hardware, firmware (e.g., application specific integrated circuits), software, or a combination of software, firmware, and hardware. For example, the various components of the devices may be formed on one Integrated Circuit (IC) chip or on separate IC chips. In addition, various components of these devices may be implemented on a flexible printed circuit film, tape Carrier Package (TCP), printed Circuit Board (PCB), or formed on one substrate. Additionally, the various components of these devices may be processes or threads running on one or more processors in one or more computing devices, executing computer program instructions, and interacting with other system components to perform the various functions described herein. The computer program instructions are stored in a memory, such as, for example, random Access Memory (RAM), which may be implemented in a computing device using a standard memory device. The computer program instructions may also be stored in other non-transitory computer readable media such as, for example, a CD-ROM, flash drive, etc. In addition, those skilled in the art will recognize that the functionality of various computing devices may be combined or integrated into a single computing device, or that the functionality of a particular computing device may be distributed to one or more other computing devices, without departing from the spirit and scope of embodiments in accordance with the present disclosure.

It should be understood that the embodiments described herein are to be considered in descriptive sense only and not for purposes of limitation. The description of features or aspects within each embodiment should generally be considered to be applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope as defined by the following claims and their equivalents.

Claims

1. A method of manufacturing a display device, the method comprising:

positioning a bank comprising a first central opening and a second central opening on an upper substrate;

Positioning a first quantum dot layer in the first central opening;

Positioning a second quantum dot layer in the second central opening; and

Light having a wavelength of 520nm or more is irradiated to the second quantum dot layer.

2. The method of claim 1, further comprising:

positioning a lamp facing the upper substrate; and

A filter is positioned between the lamp and the second quantum dot layer.

3. The method of claim 2, wherein the optical filter is configured to transmit the light having a wavelength of 520nm or greater.

4. The method of claim 2, wherein the lamp is configured to emit white light.

5. The method of claim 2, further comprising positioning a blocking member between the lamp and the first quantum dot layer.

6. The method of claim 1, wherein the intensity of the light is in the range from 5lux to 40 lux.

7. The method of claim 1, wherein the time for irradiating the light to the second quantum dot layer is in a range of 70 hours to 100 hours.

8. The method of claim 1, wherein the second quantum dot layer comprises quantum dots comprising AIGS cores.

9. The method of claim 1, wherein the first and second quantum dot layers are provided into the first and second central openings, respectively, by using an inkjet printing method.

10. The method of claim 1, further comprising positioning a color filter layer between the upper substrate and the dykes.

11. The method of claim 1, further comprising positioning a capping layer over the first quantum dot layer and the second quantum dot layer.

12. A method of manufacturing a display device, the method comprising:

Positioning a bank comprising a first central opening and a second central opening on the light emitting panel;

Positioning a first quantum dot layer in the first central opening;

Positioning a second quantum dot layer in the second central opening; and

13. The method of claim 12, further comprising:

Positioning a lamp facing the light emitting panel; and

A filter is positioned between the lamp and the second quantum dot layer.

14. The method of claim 13, wherein the optical filter is configured to transmit the light having a wavelength of 520nm or greater.

15. The method of claim 13, wherein the lamp is configured to emit white light.

16. The method of claim 13, further comprising positioning a blocking member between the lamp and the first quantum dot layer.

17. The method of claim 12, wherein the intensity of light is in the range of 5lux to 40 lux.

18. The method of claim 12, wherein the time period for irradiating the light to the second quantum dot layer is in the range of 70 hours to 100 hours.

19. The method of claim 12, wherein the second quantum dot layer comprises quantum dots comprising AIGS cores.

20. The method of claim 12, further comprising positioning a capping layer over the first quantum dot layer and the second quantum dot layer.

21. A display device, comprising:

a display panel including sub-pixels; and

A color panel on the display panel and including a quantum dot layer corresponding to the sub-pixels,

Wherein one of the quantum dot layers comprises a quantum dot comprising an AIGS core,

Wherein the AIGS core includes at least one of In_xGa_(1-x)P、AgIn_xGa_(1-x)S₂、AgInS₂、AgGaS₂、CuInS₂、CuInSe₂、CuGaS₂、CuGaSe₂、ZnSe and ZnTe _xSe_(1-x),

Where x is a rational number greater than 0 and less than 1.

22. The display device of claim 21, wherein light passing through a portion of the color panel where the one quantum dot layer is located is green.

23. The display device of claim 21, wherein the decay time τ of light passing through the one quantum dot layer is in the range of 30 to 80.

24. The display device of claim 21, further comprising a capping layer on the quantum dot layer.

25. The display device of claim 21, further comprising a color filter corresponding to the quantum dot layer.