CN118571967A - Infrared focal plane detector, infrared focal plane detector system and preparation method - Google Patents
Infrared focal plane detector, infrared focal plane detector system and preparation method Download PDFInfo
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Abstract
The present disclosure relates to an infrared focal plane detector, system and method of making, the infrared focal plane detector comprising: a flexible curved substrate and a quantum dot detection structure; the quantum dot detection structure is positioned on one side of the light incident surface of the flexible curved surface substrate; the quantum dot detection structure is used for responding to an external infrared environment light signal and outputting an electric signal to the flexible curved surface substrate to a reading circuit of the flexible curved surface substrate. Therefore, the quantum dot detection structure is arranged on one side of the light incident surface of the flexible curved surface substrate, so that the quantum dot detection structure and the flexible curved surface substrate are effectively coupled, and further the large-scale preparation and application of the infrared focal plane detector are facilitated.
Description
Technical Field
The disclosure relates to the technical field of infrared detection, in particular to an infrared focal plane detector, a system and a preparation method.
Background
In the infrared imaging field, infrared detectors have evolved from units to multiple units and from multiple units to focal planes, forming various types of infrared detectors, which may include: the infrared detector integrated by the flexible curved surface substrate and the traditional flexible sensing functional unit provides great potential and development space for solving the array arrangement of the sensor on the flexible curved surface substrate, and becomes a focus of attention in the infrared imaging field.
However, the crystal epitaxial material used in the current infrared detector is usually a rigid material, is not easy to bend or compress, and the crystal lattice is not matched with the flexible curved surface substrate, so that the crystal epitaxial material is difficult to grow on the flexible curved surface substrate, and the large-scale preparation and application of the flexible infrared focal plane detector are limited.
Disclosure of Invention
In order to solve the above technical problems, or at least partially solve the above technical problems, the present disclosure provides an infrared focal plane detector, a system, and a method of manufacturing.
The present disclosure provides an infrared focal plane detector comprising: a flexible curved substrate and a quantum dot detection structure;
the quantum dot detection structure is positioned on one side of the light incident surface of the flexible curved substrate;
The quantum dot detection structure is used for responding to an external infrared environment light signal and outputting an electric signal to the flexible curved surface substrate to a reading circuit of the flexible curved surface substrate.
Optionally, the quantum dot detection structure includes:
The first electrodes are arranged at intervals in the plane of the flexible curved surface substrate and are electrically connected with the readout circuit;
the quantum dot infrared absorption layer is positioned on one side of the first electrode, which is away from the flexible curved surface substrate, and fills a gap between the first electrodes;
the second electrode is arranged on one side of the quantum dot infrared absorption layer, which is away from the flexible curved surface substrate.
Optionally, the quantum dot detection structure includes:
The first electrodes are arranged at intervals in the plane of the flexible curved surface substrate and are electrically connected with the readout circuit;
the N-type quantum dot layer is positioned on one side of the first electrode, which is away from the flexible curved surface substrate, and fills a gap between the first electrodes;
the quantum dot infrared absorption layer is positioned at one side of the N-type quantum dot layer, which is away from the first electrode;
the P-type quantum dot layer is positioned on one side of the quantum dot infrared absorption layer, which is away from the N-type quantum dot layer;
and the second electrode is positioned at one side of the P-type quantum dot layer, which is away from the quantum dot infrared absorption layer.
Optionally, the thickness of the N-type quantum dot layer is as follows: 5 nm-10 nm;
the thickness of the quantum dot infrared absorption layer is as follows: 200-1000 nm;
The thickness of the P-type quantum dot layer is as follows: 5nm to 10nm.
Optionally, the N-type quantum dot layer comprises at least one of bismuth selenide, bismuth sulfide, bismuth telluride, zinc oxide, and cadmium selenide;
The P-type quantum dot layer comprises at least one of poly (3-hexylthiophene), poly (3, 4-ethylenedioxythiophene) polystyrene sulfonate, 2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene and poly (triarylamine).
Optionally, the quantum dot infrared absorbing layer comprises colloidal quantum dots comprising at least one of lead sulfide, lead selenide, mercury telluride, mercury selenide, cadmium sulfide, cadmium telluride, cadmium selenide, silver sulfide, silver telluride, silver selenide, and mercury cadmium telluride.
Optionally, the radius of curvature of the flexible curved substrate is greater than or equal to 3 millimeters.
The present disclosure also provides an infrared focal plane detection system comprising an imaging lens and any one of the above infrared focal plane detectors;
The imaging lens is positioned on one side of the light incident surface of the infrared focal plane detector.
The present disclosure also provides a method for manufacturing an infrared focal plane detector, the method comprising:
Providing a flexible curved substrate;
Forming a quantum dot detection structure on one side of the light incident surface of the flexible curved surface substrate;
The quantum dot detection structure is used for responding to an external infrared environment light signal and outputting an electric signal to the flexible curved surface substrate to a reading circuit of the flexible curved surface substrate.
Optionally, the forming a quantum dot detection structure on the light incident surface side of the flexible curved substrate includes:
And stacking and forming a quantum dot infrared absorption layer of the quantum dot detection structure on one side of the light incident surface of the flexible curved surface substrate by adopting any one of spin coating, spray coating and drop coating.
Compared with the prior art, the technical scheme provided by the embodiment of the disclosure has the following advantages:
an infrared focal plane detector provided by an embodiment of the present disclosure includes: a flexible curved substrate and a quantum dot detection structure; the quantum dot detection structure is positioned on one side of the light incident surface of the curved substrate; the quantum dot detection structure is used for responding to an external infrared environment light signal and outputting an electric signal to the flexible curved surface substrate to a reading circuit of the flexible curved surface substrate. Therefore, the quantum dot detection structure is arranged on one side of the light incident surface of the flexible curved surface substrate, so that the quantum dot detection structure and the flexible curved surface substrate are effectively coupled, and further the large-scale preparation and application of the infrared focal plane detector are facilitated.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure.
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings that are required to be used in the description of the embodiments or the prior art will be briefly described below, and it will be obvious to those skilled in the art that other drawings may be obtained from these drawings without inventive effort.
Fig. 1 is a schematic structural diagram of an infrared focal plane detector according to an embodiment of the disclosure;
FIG. 2 is a schematic diagram of another infrared focal plane detector provided in an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of an infrared focal plane detector according to another embodiment of the present disclosure;
FIG. 4 is a schematic diagram of spectral absorption of an infrared focal plane detector according to an embodiment of the present disclosure;
FIG. 5 is a schematic diagram of an infrared focal plane detection system according to an embodiment of the disclosure;
fig. 6 is a schematic flow chart of a method for manufacturing an infrared focal plane detector according to an embodiment of the disclosure.
Wherein, 100, infrared focal plane detector; 110. a flexible curved substrate; 120. a quantum dot detection structure; 121. a first electrode; 122. a quantum dot infrared absorption layer; 123. a second electrode; 124. an N-type quantum dot layer; 125. a P-type quantum dot layer; 130. an imaging lens.
Detailed Description
In order that the above objects, features and advantages of the present disclosure may be more clearly understood, a further description of aspects of the present disclosure will be provided below. It should be noted that, without conflict, the embodiments of the present disclosure and features in the embodiments may be combined with each other.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced otherwise than as described herein; it will be apparent that the embodiments in the specification are only some, but not all, embodiments of the disclosure.
First, the drawbacks of the prior art and the improvements of the present application will be described in connection with the relevant background.
In the technical field of infrared detection, an infrared detector is a device for converting an external infrared environment light signal (also called an infrared radiation signal) into an electric signal for output, and the infrared detector is developed from a unit to a plurality of units and then from the plurality of units to a focal plane, so that a leap of detecting target thermal imaging from a point source is realized, various infrared detectors are formed, and a sufficient choice is provided for the system application of the infrared detector.
Where high resolution imaging of the infrared detector is achieved by a multi-lens system to correct for optical aberrations and flatten the projected image on a plane, this adds significant complexity, size and cost to the system, as would be affected by lens spherical aberration if a single lens were attempted to cover the real image, resulting in significant spatial mismatch of focus on the image. While the human eye includes only a simple single lens imaging system, it is capable of providing high resolution imaging with adjustable zoom capability, this excellent performance results from a curved retina that can correct spherical aberration by matching the curvature of the lens focal plane. Thus, electronic eye systems have gained increasing attention and research inspired by biological eyes with the unique advantages of pittsburgh matching curvature (Petzval-matched curvature), wide field of view, and simplified lens system, but direct fabrication of infrared detectors on flexible surfaces is complex, expensive, and limited in available instrumentation.
With the development of semiconductor manufacturing technology, a group of micro photodetectors separated by electrically interconnected metal traces can be fabricated based on mature semiconductor manufacturing technology, which is initially fabricated on a planar structured flexible substrate, and then the planar array is bent or folded to shape the hemispherical structure, and by virtue of the fabrication advantages of the flexible array, the hemispherical structured flexible substrate is integrated with conventional flexible sensing functional units, which can improve the sensitivity and dimension of the infrared detector. The sensing technology based on the flexible substrate provides great development potential and lifting space for realizing the array of the sensing functional units on the flexible substrate.
However, the infrared detector is mainly obtained by growing a crystal epitaxial material on a planar substrate, wherein the material of the planar substrate is a rigid and brittle crystal material, such as: cadmium zinc telluride (CdZeTe), gallium arsenide (GaAs), indium arsenide (InAs), indium phosphide (InP), and the like, have no bending properties, and common crystal epitaxial materials are rigid gallium arsenide (InGaAs), indium antimonide (InSb), mercury Cadmium Telluride (MCT), and the like, and in general, the crystal epitaxial materials need a substrate lattice-matched with the crystal epitaxial materials to grow, but the crystal epitaxial materials are difficult to bend or compress because the crystal epitaxial materials are not easy to bend or compress, and the crystal lattice is not matched with a flexible curved substrate, so that the crystal epitaxial materials are difficult to grow on the flexible curved substrate.
At present, the existing flexible infrared focal plane detector adopts a flip-chip bonding mode to realize the bonding of a crystal epitaxial material and a flexible curved surface substrate, so that the preparation period is long, the production rate is low, the material processing cost is high, the bonding power is low, and even when the bonding power is low, the cold bonding phenomenon can occur, thereby reducing the detection efficiency of the infrared detector, and limiting the large-scale preparation and application of the flexible infrared focal plane detector.
Aiming at least one of the problems, the embodiment of the disclosure provides an infrared focal plane detector, a system and a preparation method, wherein for the infrared focal plane detector, as colloidal quantum dots (Colloidal Quantum Dot, CQD) are infrared materials with synthesis expandability, mechanical flexibility and broad-spectrum adjustability, the effective coupling between the quantum dot detection structure and the flexible curved surface substrate can be ensured without welding by arranging the quantum dot detection structure on one side of the light inlet surface of the flexible curved surface substrate, thereby being beneficial to realizing the large-scale preparation and application of the infrared focal plane detector, such as: the method can be applied to the fields of chemical detection, wafer detection, object monitoring, national defense safety and the like.
The infrared focal plane detector, the system and the preparation method provided by the embodiment of the disclosure are exemplified below with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of an infrared focal plane detector according to an embodiment of the disclosure. Referring to fig. 1, the infrared focal plane detector includes: a flexible curved substrate 110 and a quantum dot detection structure 120; the quantum dot detection structure 120 is located at one side of the light incident surface of the flexible curved substrate 110; the quantum dot detecting structure 120 is configured to output an electrical signal to the flexible curved substrate 110 in response to an external infrared ambient light signal to a readout circuit of the flexible curved substrate 110.
The flexible curved substrate 110 is a silicon-based readout circuit substrate for carrying the quantum dot detection structure 120. Illustratively, the flexible curved substrate 110 may be made of polydimethylsiloxane, polyimide, or other materials, which are not limited herein.
Wherein the quantum dot detection structure 120 is comprised of a quantum dot material. Specifically, due to the advantages of synthesis expandability, mechanical flexibility, broad-spectrum adjustability and the like of the quantum dot material, the quantum dot detection structure 120 can be directly coupled with the flexible curved surface substrate 110, the problem that the crystal epitaxial material is difficult to grow on the flexible curved surface substrate 110 is solved, and a flip-chip bonding mode required by the existing infrared detector in preparation is not needed, so that the preparation cost of the flexible infrared focal plane detector is reduced, the yield is improved, and the large-scale preparation and application of the flexible infrared focal plane detector are facilitated.
Specifically, when the external infrared ambient light is incident on the infrared focal plane detector, the quantum dot detection structure 120 performs photoelectric response based on the external infrared ambient light signal, that is, converts the external infrared ambient light signal into an electrical signal, and then transmits the electrical signal to the flexible curved surface substrate 110, and the electrical signal is converted into a digital signal and read out by the (signal) readout circuit in the flexible curved surface substrate 110, so that the digital signal can be conveniently processed by other related circuits for infrared imaging.
An infrared focal plane detector provided by an embodiment of the present disclosure includes: a flexible curved substrate 110 and a quantum dot detection structure 120; the quantum dot detection structure 120 is located at one side of the light incident surface of the flexible curved substrate 110; the quantum dot detecting structure 120 is configured to output an electrical signal to the flexible curved substrate 110 in response to an external infrared ambient light signal to a readout circuit of the flexible curved substrate 110. In this way, by arranging the quantum dot detection structure 120 on the light incident surface side of the flexible curved surface substrate 110, the quantum dot detection structure 120 and the flexible curved surface substrate 110 are ensured to be effectively coupled, and further the large-scale preparation and application of the infrared focal plane detector are facilitated.
In some embodiments, fig. 2 is a schematic structural diagram of another infrared focal plane detector provided in an embodiment of the present disclosure. Referring to fig. 2 on the basis of fig. 1, the quantum dot detection structure 120 includes: the first electrodes 121 are arranged at intervals in the plane of the flexible curved substrate 110, and the first electrodes 121 are electrically connected with the readout circuit; the quantum dot infrared absorption layer 122 is positioned on one side of the first electrode 121 away from the flexible curved surface substrate 110, and fills a gap between the first electrodes 121; the second electrode 123 is disposed on a side of the quantum dot infrared absorbing layer 122 facing away from the flexible curved substrate 110.
Illustratively, taking the orientation and structure shown in fig. 2 as an example, on the side of the flexible curved substrate 110 that is curved upward, a plurality of first electrodes 121 are disposed at intervals in the upper plane of the flexible curved substrate 110, the quantum dot infrared absorption layer 122 fills the gaps between the first electrodes 121 and covers the plurality of first electrodes 121, and the second electrode 123 is located above the quantum dot infrared absorption layer 122. Thus, the light guide type infrared focal plane detector is integrally formed, the structure is simple, and the preparation complexity of the infrared focal plane detector is reduced.
The first electrode 121 is a bottom electrode of the quantum dot detecting structure 120, and is used for collecting an electrical signal (commonly called electrons) generated by photoelectric response. The first electrode 121 may be one or more of Indium Tin Oxide (ITO), fluorine-doped zinc oxide (FTO), gold, silver, copper, aluminum, and chromium, and may be stacked to a predetermined thickness by Physical Vapor Deposition (PVD) such as thermal evaporation, magnetron sputtering, or the like, or stacked to a predetermined thickness by Chemical Vapor Deposition (CVD), and the patterned first electrode 121 in an array arrangement may be prepared by a photolithographic masking process, such as a photolithography followed by etching, or a photolithography followed by lift-off process, and in other embodiments, the first electrode 121 may be prepared by other electrode materials known to those skilled in the art.
The second electrode 123 is a top electrode of the quantum dot detecting structure 120, and is used for collecting holes generated by photoelectric response. The second electrode 123 may be any one of gold, silver, copper and aluminum, and may be prepared by Physical Vapor Deposition (PVD) such as thermal evaporation, electron beam evaporation or magnetron sputtering, or may be prepared by Chemical Vapor Deposition (CVD), so long as the material for preparing the top electrode does not affect the light transmittance thereof, so as to facilitate the light transmittance of the external infrared environment, and the material for preparing the top electrode is not limited herein.
For example, the thickness of the first electrode 121 may be 5nm to 200nm, and the thickness of the second electrode 123 may be 5nm to 50nm, which is not limited herein.
The quantum dot infrared absorption layer 122 is a quantum dot layer for performing photoelectric response, i.e., an intrinsic type quantum dot layer. Specifically, after the external infrared ambient light passes through the second electrode 123, the quantum dot infrared absorption layer 122 can generate photo-generated electron-hole pairs, then the electrons are transferred to the first electrode 121, and the holes are transferred to the second electrode 123, and since the first electrode 121 is electrically connected to the readout circuit of the flexible curved substrate 110, the electrons can be transferred to the readout circuit through the first electrode 121, and the readout circuit performs related processing on the electrons (i.e., the electrical signals).
In this way, by arranging the plurality of first electrodes 121 at intervals in the plane of the flexible curved substrate, the effective contact area between the quantum dot infrared absorption layer 122 and the flexible curved substrate 110 is increased, so that good coupling effect between the quantum dot infrared absorption layer 122 and the flexible curved substrate 110 is ensured; meanwhile, the first electrodes 121 can be connected with pixel electrodes in the flexible curved substrate 110 one to one, so that the flexible curved substrate 110 can collect a plurality of independent electrical signals, and the interval distance between the adjacent first electrodes 121 can be set according to the preparation requirement of the infrared focal plane detector, which is not limited.
In some embodiments, fig. 3 is a schematic structural diagram of yet another infrared focal plane detector provided by an embodiment of the present disclosure. On the basis of fig. 1, referring to fig. 3, the quantum dot detection structure 120 includes: the first electrodes 121 are arranged at intervals in the plane of the flexible curved substrate 110, and the first electrodes 121 are electrically connected with the readout circuit; an N-type quantum dot layer 124 located at a side of the first electrode 121 facing away from the flexible curved substrate 110 and filling a gap between the first electrodes 121; the quantum dot infrared absorption layer 122 is positioned on one side of the N-type quantum dot layer 124 away from the first electrode 121; the P-type quantum dot layer 125 is positioned on one side of the quantum dot infrared absorption layer 122 away from the N-type quantum dot layer 124; the second electrode 123 is located on a side of the P-type quantum dot layer 125 facing away from the quantum dot infrared absorption layer 122.
Illustratively, taking the orientation and structure shown in fig. 3 as an example, on the side of the flexible curved substrate 110 that is curved upward, a plurality of first electrodes 121 are disposed at intervals in the upper plane of the flexible curved substrate 110, the N-type quantum dot layer 124 fills the gaps between the first electrodes 121 and covers the plurality of first electrodes 121, and the quantum dot infrared absorbing layer 122, the P-type quantum dot layer 125, and the second electrode 123 are sequentially stacked above the N-type quantum dot layer 124. Thus, a photovoltaic type infrared focal plane detector is integrally formed.
Specifically, since the N-type quantum dot layer 124 and the P-type quantum dot layer 125 are located at opposite sides of the quantum dot infrared absorption layer 122, a PN junction can be formed between the three, on the basis that, after external infrared ambient light passes through the second electrode 123, electrons and holes generated in the quantum dot infrared absorption layer 122 are unevenly diffused, so that a built-in potential can be formed inside the photovoltaic type infrared focal plane detector, electron-hole pairs can be dissociated into free electrons and holes under the action of the built-in potential, the holes are transmitted to the second electrode 123 through the P-type quantum dot layer 125, and the electrons are transmitted to the first electrode 121 through the N-type quantum dot layer 124.
In some embodiments, the infrared focal plane detector further comprises an external power source (not shown) on the basis of fig. 2 and 3.
Wherein an external power source is connected to the second electrode 123 and the first electrode 121, respectively, for applying an operating voltage to the infrared focal plane detector. It should be noted that, by applying working voltages to the photoconductive infrared focal plane detector and the photovoltaic infrared focal plane detector, the electric signals (i.e., electrons) generated by the photoelectric response can be driven to move to the flexible curved surface substrate 110 relatively quickly, so as to form a current moving in a directional manner, so as to collect and process the electric signals in the current in time.
In addition, after the external power supply applies working voltage to the photovoltaic infrared focal plane detector, the built-in potential of the photovoltaic infrared focal plane detector can be further enhanced, the speed of electrons and holes which are dissociated into free electrons and holes by the electron-hole pair and the transmission efficiency of the electrons and the holes are improved, so that the current saturation is increased, and compared with the photoconductive infrared focal plane detector, the photovoltaic infrared focal plane detector has better signal-to-noise ratio and ensures good detection performance.
In some embodiments, based on fig. 2 and 3, the thickness of the N-type quantum dot layer 124 is: 5 nm-10 nm; the thickness of the quantum dot infrared absorbing layer 122 is: 200-1000 nm; the thickness of the P-type quantum dot layer 125 is: 5nm to 10nm.
In this way, by setting the thicknesses of the N-type quantum dot layer 124, the quantum dot infrared absorption layer 122, and the P-type quantum dot layer 125 to the above ranges, electrons and holes are facilitated to move in the corresponding directions, and the transmission efficiency of the electrons and the holes is ensured, so that the infrared focal plane detector forms a good detection effect, and specific values of the thicknesses of the N-type quantum dot layer 124, the quantum dot infrared absorption layer 122, and the P-type quantum dot layer 125 can be set according to the transmission requirements of the electrons and the holes, which are not limited herein.
In some embodiments, on the basis of fig. 3, N-type quantum dot layer 124 includes at least one of bismuth selenide, bismuth sulfide, bismuth telluride, zinc oxide, and cadmium selenide; the P-type quantum dot layer 125 includes at least one of poly (3-hexylthiophene), poly (3, 4-ethylenedioxythiophene) polystyrene sulfonate, 2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene, and polytriarylamine.
In addition, the N-type quantum dot layer 124 may be one or more of N-type quantum dot films of the intrinsic type quantum dot layer, and the P-type quantum dot layer 125 may be one or more of P-type quantum dot films of the intrinsic type quantum dot layer.
Thus, the N-type quantum dot layer 124 and the P-type quantum dot layer 125 in the embodiments of the present disclosure are formed by the above corresponding materials, so that direct coupling with the flexible curved substrate 110 is facilitated, and thus, the preparation difficulty in the preparation process of the infrared focal plane detector can be reduced, and the preparation efficiency and the yield of the infrared focal plane detector are improved.
In some embodiments, based on fig. 2 and 3, the quantum dot infrared absorbing layer 122 includes colloidal quantum dots including at least one of lead sulfide, lead selenide, mercury telluride, mercury selenide, cadmium sulfide, cadmium telluride, cadmium selenide, silver sulfide, silver telluride, silver selenide, and mercury cadmium telluride.
Wherein the quantum dot infrared absorbing layer 122 includes colloidal quantum dots of intrinsic type (colloid) and the absorption wavelength thereof is related to the reaction time and reaction temperature during the synthesis of the intrinsic type quantum dots. Specifically, in the synthesis process of the intrinsic colloidal quantum dot, the absorption wavelength and the particle size of the intrinsic colloidal quantum dot can be precisely controlled by precisely controlling the reaction time and the reaction temperature, for example: the longer the reaction time, the higher the reaction temperature, the longer the absorption wavelength and the larger the particle size of the intrinsic colloidal quantum dot. As such, the quantum dot infrared absorbing layer 122 in the embodiment of the present disclosure can cover any one of short-wave infrared, medium-wave infrared and long-wave infrared, thereby forming a monochromatic infrared focal plane detector, and herein, the absorption wavelength and the particle size of the intrinsic colloidal quantum dot are not limited.
Illustratively, fig. 4 is a schematic diagram of spectral absorption of an infrared focal plane detector provided by an embodiment of the present disclosure. Referring to fig. 4, wherein the horizontal axis X1 represents wave number (i.e., reciprocal of wavelength) in cm -1, the vertical axis Y1 represents absorbance in dimensionless units, which can be expressed in a.u. (acronym for arbitrary units); l31, L32, L33, L34 and L35 respectively represent the spectrum absorption curves of quantum dots with the wavelengths of 1.7um, 2um, 2.5um, 3um and 3.7um, which shows that quantum dots with different wave bands can be synthesized when the infrared focal plane detector is prepared, and the infrared focal plane detector with the spectrum detection range of 1.7um to 3.7um can be realized.
In some embodiments, the infrared focal plane detector further comprises, on the basis of fig. 2 and 3: data analysis and imaging circuitry (not shown) is electrically connected to the flexible curved substrate 110.
The data analysis and imaging circuit comprises a signal processor. Specifically, when an object or a human body enters the detection range of the infrared focal plane detector, infrared rays (i.e., external infrared ambient light) emitted by the object or the human body are received by the quantum dot infrared absorption layer of the infrared focal plane detector and converted into electric signals, the electric signals are transmitted to the data analysis and imaging circuit through the flexible curved surface substrate 110, the signal analysis and imaging circuit performs signal amplification, filtering and other processing on the electric signals by the signal processor of the data analysis and imaging circuit, infrared imaging is performed on the basis of the processed signals, and the existence, movement, temperature change and the like of the object or the human body are determined.
In some embodiments, the radius of curvature of the flexible curved substrate 110 is greater than or equal to 3 millimeters based on fig. 2 and 3.
Specifically, by setting the curvature radius of the flexible curved substrate 110 to be greater than or equal to 3 mm, the focusing points of the incident external infrared ambient light are all on the curved focal plane of the infrared focal plane detector, so that the image distortion phenomenon is avoided, a good imaging effect is ensured, and clear imaging with a large field angle and high resolution is realized.
Wherein the thickness of the flexible curved substrate 110 is less than or equal to 50 μm. Thus, on the basis that the radius of curvature of the flexible curved substrate 110 is greater than or equal to 3mm, by setting the thickness thereof to be less than or equal to 50 μm, the imaging effect of the infrared focal plane detector can be further improved, and the arrangement can be performed according to the imaging requirement of the infrared focal plane detector, which is not limited herein.
On the basis of the foregoing implementation manners, the embodiment of the disclosure further provides an infrared focal plane detection system, and fig. 5 is a schematic structural diagram of the infrared focal plane detection system provided by the embodiment of the disclosure, and referring to fig. 5, the infrared focal plane detection system includes an imaging lens 130 and any one of the infrared focal plane detectors 100 provided by the foregoing implementation manners.
The imaging lens 130 is located on the light incident surface side of the infrared focal plane detector 100. Specifically, when the external infrared ambient light irradiates the infrared focal plane detection system, the imaging lens 130 may converge the external infrared ambient light of various incident directions to a plurality of back focal points located at the infrared focal plane detector 100, thereby forming a clear image on the plurality of back focal points.
Thus, for the mode that current infrared detector adopted multiunit imaging lens to carry out the formation of image, this disclosed embodiment can focus external infrared environment light at infrared focal plane detector 100 through a set of imaging lens 130, has reduced the required optical subassembly when infrared focal plane detection system formation of image for infrared focal plane detection system's size and weight reduce, and then practiced thrift infrared focal plane detection system's cost of preparation, convenient equipment and carry.
The embodiment of the disclosure also provides a preparation method of the infrared focal plane detector, which is used for preparing any one of the infrared focal plane detectors provided by the embodiment.
In some embodiments, fig. 6 is a schematic flow chart of a method for manufacturing an infrared focal plane detector according to an embodiment of the disclosure, and referring to fig. 6, the method includes:
S210, providing a flexible curved substrate.
For example, acetone, isopropanol and deionized water can be sequentially used for cleaning the flexible curved surface substrate, so that the flexible curved surface substrate can be cleaned for later use.
S220, forming a quantum dot detection structure on one side of the light incident surface of the flexible curved surface substrate.
The quantum dot detection structure is used for responding to an external infrared environment optical signal and outputting an electric signal to the readout circuit of the flexible curved surface substrate, and detailed description is omitted herein for the specific preparation steps of the quantum dot detection structure.
In some embodiments, S220 specifically includes the following steps based on fig. 6:
and stacking a quantum dot infrared absorption layer of a quantum dot detection structure on one side of the light incident surface of the flexible curved surface substrate by adopting any one of spin coating, spray coating and drop coating.
Specifically, compared with the prior art that bonding of a crystal epitaxial material and a flexible curved surface substrate is achieved through flip chip bonding, various adverse problems are generated, and the preparation process of the flexible infrared focal plane detector is simpler by adopting spin coating, spray coating or dripping to prepare the quantum dot infrared absorption layer to the flexible curved surface substrate, so that the preparation cost of the flexible infrared focal plane detector is effectively reduced, and the design complexity of the flexible infrared focal plane detector is reduced.
Illustratively, the thickness of the quantum dot infrared absorption layer may be 200nm to 1000nm, such as: the thickness of the quantum dot infrared absorption layer can be 200nm, 400nm, 600nm or other thickness values, in other embodiments, the thickness of the quantum dot infrared absorption layer can be in other numerical ranges or numerical sizes, and can be set according to the imaging requirements of the infrared focal plane detector, and the quantum dot infrared absorption layer is not limited herein.
It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing is merely a specific embodiment of the disclosure to enable one skilled in the art to understand or practice the disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown and described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. An infrared focal plane detector, comprising: a flexible curved substrate and a quantum dot detection structure;
the quantum dot detection structure is positioned on one side of the light incident surface of the flexible curved substrate;
The quantum dot detection structure is used for responding to an external infrared environment light signal and outputting an electric signal to the flexible curved surface substrate to a reading circuit of the flexible curved surface substrate.
2. The infrared focal plane detector of claim 1, wherein the quantum dot detection structure comprises:
The first electrodes are arranged at intervals in the plane of the flexible curved surface substrate and are electrically connected with the readout circuit;
the quantum dot infrared absorption layer is positioned on one side of the first electrode, which is away from the flexible curved surface substrate, and fills a gap between the first electrodes;
the second electrode is arranged on one side of the quantum dot infrared absorption layer, which is away from the flexible curved surface substrate.
3. The infrared focal plane detector of claim 1, wherein the quantum dot detection structure comprises:
The first electrodes are arranged at intervals in the plane of the flexible curved surface substrate and are electrically connected with the readout circuit;
the N-type quantum dot layer is positioned on one side of the first electrode, which is away from the flexible curved surface substrate, and fills a gap between the first electrodes;
the quantum dot infrared absorption layer is positioned at one side of the N-type quantum dot layer, which is away from the first electrode;
the P-type quantum dot layer is positioned on one side of the quantum dot infrared absorption layer, which is away from the N-type quantum dot layer;
and the second electrode is positioned at one side of the P-type quantum dot layer, which is away from the quantum dot infrared absorption layer.
4. An infrared focal plane detector as recited in claim 3, wherein,
The thickness of the N-type quantum dot layer is as follows: 5 nm-10 nm;
the thickness of the quantum dot infrared absorption layer is as follows: 200-1000 nm;
The thickness of the P-type quantum dot layer is as follows: 5nm to 10nm.
5. The infrared focal plane detector of claim 3, wherein the N-type quantum dot layer comprises at least one of bismuth selenide, bismuth sulfide, bismuth telluride, zinc oxide, and cadmium selenide;
The P-type quantum dot layer comprises at least one of poly (3-hexylthiophene), poly (3, 4-ethylenedioxythiophene) polystyrene sulfonate, 2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene and poly (triarylamine).
6. An infrared focal plane detector according to claim 2 or 3, characterized in that,
The quantum dot infrared absorption layer comprises colloidal quantum dots, wherein the colloidal quantum dots comprise at least one of lead sulfide, lead selenide, mercury telluride, mercury selenide, cadmium sulfide, cadmium telluride, cadmium selenide, silver sulfide, silver telluride, silver selenide and mercury cadmium telluride.
7. The infrared focal plane detector of claim 1, wherein the radius of curvature of the flexible curved substrate is greater than or equal to 3 millimeters.
8. An infrared focal plane detection system comprising an imaging lens and an infrared focal plane detector as claimed in any one of claims 1 to 7;
The imaging lens is positioned on one side of the light incident surface of the infrared focal plane detector.
9. A method of making an infrared focal plane detector, the method comprising:
Providing a flexible curved substrate;
Forming a quantum dot detection structure on one side of the light incident surface of the flexible curved surface substrate;
The quantum dot detection structure is used for responding to an external infrared environment light signal and outputting an electric signal to the flexible curved surface substrate to a reading circuit of the flexible curved surface substrate.
10. The method for manufacturing an infrared focal plane detector according to claim 9, wherein forming a quantum dot detection structure on the light incident surface side of the flexible curved substrate comprises:
And stacking and forming a quantum dot infrared absorption layer of the quantum dot detection structure on one side of the light incident surface of the flexible curved surface substrate by adopting any one of spin coating, spray coating and drop coating.
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