CN1185651A - 一种ⅱ-ⅵ族半导体膜的制备技术 - Google Patents
一种ⅱ-ⅵ族半导体膜的制备技术 Download PDFInfo
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Abstract
本发明属于涉及ZnSe基Ⅱ－Ⅵ族半导体膜的制备技术。本发明提供了一种Ⅱ－Ⅵ族半导体膜的制备技术,这种技术可获得大面积、表面光亮的Ⅱ－Ⅵ族半导体膜。用30—50%的KOH溶液,也可用同浓度的NaOH溶液作电解液,直流电压6—15V,GaAs电阻率≤100Ω·cm。由于GaAs衬底的电阻率远大于ZnSe基超晶格层的电阻率,因此在电解液中电流集中于GaAs衬底,使之电解,而ZnSe基超晶格层不受影响。
Description
本发明属于涉及ZnSe基II-VI族半导体膜的制备技术。
ZnSe与GaAs有好的晶格匹配和可进行大面积集成的优点，因此ZnSe基量子阱或超晶格通常是生长在GaAs衬底上。但GaAs对可见光不透明，这对进行ZnSe基半导体材料在可见光，特别是蓝-绿波段的光电器件研究带来困难，因此需要在GaAs衬底上腐蚀通光窗口，使窗口上仅保留ZnSe基薄膜。采用的方法是用H2O2+NH3.H2O腐蚀GaAs的工艺(D.R.Andersen等人，Appl.phys.Lett.，48，1559(1986))，而这种腐蚀液对ZnSe基材料同样有腐蚀作用，使得窗口无法开的很大，只能在1mm2，即使这样，也出现对II-VI族膜表面的腐蚀，这就直接影响该材料的光电特性，并由于窗口孔径小，给测量带来困难。
本发明的目的是提供一种II-VI族半导体膜的制备技术，这种技术可获得大面积、表面光亮的II-VI族半导体膜。
为实现上述目的，本发明采用的技术方案是：
用30-50％的KOH溶液，也可用同浓度的NaOH溶液作电解液，直流电压6-15V，GaAs电阻率≤100Ω·cm。
由于GaAs衬底的电阻率远大于ZnSe基超晶格层的电阻率，因此在电解液中电流集中于GaAs衬底，使之电解，而ZnSe基超晶格层不受影响。
下面结合实施例对本发明作具体说明。
实施例1.外延超晶格ZnCdSe/ZnSe，GaAs衬底4Ω·cm，带有外延膜的一面用无色环氧树脂粘附于玻璃基片上，衬底作为阳极引出电极线，放入来40％KOH电解液中，直流电压8V。
实施例2.将外延II-VI族超晶格层的GaAs衬底作为阳极引出电极线，留出待电解的区域，其余用石蜡密封，其余条件同实施例1。
实施例3.电解液为40％NaOH溶液，其余条件同实施例1。
实施例4.外延超晶格ZnS/ZnSe，其余条件同实施例1。
实施例5.外延超晶格ZnTe/ZnSe，其余条件同实施例1。
实施例6.外延超晶格ZnTe/ZnS，其余条件同实施例1。
Claims (1)
1、一种II-VI族半导体膜的制备技术，其特征在于用30一50％的KOH溶液，也可用同浓度的NaOH溶液作电解液，直流电压6-15V，GaAs电阻率≤100Ω·cm。
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| Application Number | Priority Date | Filing Date | Title |
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| CN 96122294 CN1185651A (zh) | 1996-12-17 | 1996-12-17 | 一种ⅱ-ⅵ族半导体膜的制备技术 |
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| CN 96122294 CN1185651A (zh) | 1996-12-17 | 1996-12-17 | 一种ⅱ-ⅵ族半导体膜的制备技术 |
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| CN1185651A true CN1185651A (zh) | 1998-06-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101665983B (zh) * | 2008-09-01 | 2012-08-29 | 西北工业大学 | 一种硒化锌单晶体生长方法及其生长容器 |
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1996
- 1996-12-17 CN CN 96122294 patent/CN1185651A/zh active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101665983B (zh) * | 2008-09-01 | 2012-08-29 | 西北工业大学 | 一种硒化锌单晶体生长方法及其生长容器 |
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