CN118559900A - Rounding processing method for edge high-stress hard and brittle semiconductor material - Google Patents
Rounding processing method for edge high-stress hard and brittle semiconductor material Download PDFInfo
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- CN118559900A CN118559900A CN202410951584.4A CN202410951584A CN118559900A CN 118559900 A CN118559900 A CN 118559900A CN 202410951584 A CN202410951584 A CN 202410951584A CN 118559900 A CN118559900 A CN 118559900A
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- 239000000463 material Substances 0.000 title claims abstract description 87
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 238000003672 processing method Methods 0.000 title claims abstract description 8
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 61
- 239000010432 diamond Substances 0.000 claims abstract description 61
- 239000013078 crystal Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims description 24
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 239000011230 binding agent Substances 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000004831 Hot glue Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 238000013459 approach Methods 0.000 claims 1
- 239000007767 bonding agent Substances 0.000 claims 1
- 239000002178 crystalline material Substances 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 239000002699 waste material Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000110 cooling liquid Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
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- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The invention discloses a rounding processing method of an edge high-stress hard and brittle semiconductor material, which is characterized in that crystals of the edge high-stress hard and brittle semiconductor material to be processed are adhered to a lining plate, the lining plate is fixed on a fixed block and is fixed on a workbench of a diamond single wire cutting machine; cutting off edge stress areas from the material circular surface at positions close to the circumferential strings; the fixed block, the crystal and the lining plate are separated, the crystal and the lining plate are secondarily bonded, the crystal is fixed on a workbench of a diamond curve cutting machine, a cutting line is aligned to a cutting edge, curve cutting is carried out, and a residual stress area is cut off along a circular track line in the direction of the circle center along the diameter from the position of a perpendicular bisector perpendicular to a single-line cutting section; and separating the lining plate from the material to finish rounding of the edge high-stress hard and brittle semiconductor material. According to the invention, the diamond single-wire cutting machine is used for partially cutting the edge stress region, and the diamond curve cutting machine is used for completely cutting the residual edge stress region, so that the rapid, low-cost and low-loss cutting is realized, the edge of the cut material is complete and has no crack, the roughness is less than 50 mu m, and the processing waste can be reused.
Description
Technical Field
The invention belongs to the technical field of processing of hard and brittle semiconductor materials, and particularly relates to a rounding processing method of a hard and brittle semiconductor material with high edge stress.
Background
With the continuous development of the semiconductor industry, the quality of semiconductor products is continuously improved, and besides research on the growth process of materials, the subsequent processing of wafers is also more and more important. Taking silicon carbide semiconductor material as an example, the Mohs hardness is more than 9 and is inferior to that of diamond, the chemical stability is good, the silicon carbide semiconductor material hardly reacts with other substances at normal temperature, and the processing difficulty is great. The silicon carbide semiconductor material has very wide application prospect as a third-generation semiconductor material, and after the growth is finished, the silicon carbide semiconductor material needs to be subjected to orientation, grinding and rounding treatment so as to remove stress areas at the edge of an ingot, and then the subsequent linear cutting, chamfering, grinding and polishing processes are carried out, so that a wafer meeting the use requirements is finally obtained.
At present, a rounding process is generally adopted to remove stress areas at the edge of an ingot, namely, the stress areas at the edge of the ingot are removed by adopting a diamond grinding wheel, the problem of ingot cracking easily occurs in the process of processing, meanwhile, the diamond grinding wheel required by rounding is consumable, and is high in price, so that the cost of the rounding process is overhigh, and the polished part in the rounding process is completely abandoned, so that the material waste is serious.
Disclosure of Invention
Aiming at the problems that in the prior art, in the process of removing the edge stress area of the semiconductor material, ingot cracking, high cost and material waste are easy to occur in the rounding process, the invention provides a rounding processing method of the edge high-stress hard and brittle semiconductor material, which is characterized in that a diamond single wire cutting machine is utilized to partially cut off the edge stress area, and then a diamond curve cutting machine is utilized to completely cut off the residual edge stress area, so that quick and low-loss cutting is realized.
The invention is realized by the following technical scheme:
a rounding processing method of a hard and brittle semiconductor material with high stress at the edge comprises the following steps:
(1) Bonding: bonding the edge high-stress hard and brittle semiconductor material crystal to be treated on a lining plate, and fixing the other surface of the lining plate on a fixed block;
(2) Fixing: fixing the bonded material in the step (1) on a workbench of a diamond single wire cutting machine;
(3) Single wire cutting: setting technological parameters of a diamond single wire cutting machine, cutting the bonded material, and partially cutting an edge stress area from a position, close to a circumferential chord, of the round surface of the material;
(4) Transferring and fixing materials: taking down the material cut by the single wire in the step (3), separating the fixed block, the crystal and the lining plate, and enabling the crystal and the lining plate to be firmly bonded for the second time, fixing the crystal and the lining plate on a workbench of a diamond curve cutting machine and enabling the cutting line to be aligned to a cutting edge;
(5) Curve cutting: drawing a cutting track on a control interface of a diamond curve cutting machine according to the aligned knife-entering edge position during rotation fixation, establishing a cutting task, setting technological parameters of the diamond curve cutting machine, performing curve cutting on the fixed material, and cutting off a residual stress area along a circular track line along the diameter to the circle center direction from the position of a perpendicular bisector perpendicular to a single-line cutting section;
(6) And (5) after cutting, removing the material, separating the lining plate from the material, and finishing rounding the edge high-stress hard and brittle semiconductor material.
Further, the edge high-stress hard and brittle semiconductor material to be treated is one of silicon carbide, gallium arsenide, gallium nitride and aluminum nitride crystals.
Further, the binder used in the bonding in the step (1) is solid wax or hot melt adhesive; the lining plate is made of glass or ceramic; the fixed block is made of metal or ceramic.
Further, the binder used in the bonding in the step (1) is solid wax; the lining plate is made of glass; the fixed block is made of aluminum alloy.
Further, the fixing method in the step (2) is that after the lining plate is perforated, bolts and nuts are fixed, and bolts are fastened and pressed to be fixed or the mortise and tenon structure is fastened and fixed.
Further, the parameters of the single wire cutting in the step (3) are set as follows: the diameter of the diamond cutting line is 0.02-0.5 mm, the cutting line stroke is slightly larger than the stroke required by actual cutting, the cutting speed is 0.05-20 mu m/s, and the running speed of the cutting line is 3-30 m/s.
Further, in the step (5), the cutting track of the diamond curve cutting machine directly cuts a circular track line from the cutting edge, or cuts a notch from the cutting edge to the circle center along the diameter direction, and then cuts the circular track line, wherein the length of the notch is 0.1-15 mm; the cut is biased inwardly, along the exact center of the track, or outwardly with respect to the circumferential track.
Further, in the step (5), the diameter of the diamond cutting line is 0.02-0.5 mm, the cutting speed is 0.05-10 mu m/s, and the running speed of the cutting line is 3-30 m/s.
And (5) supporting the drawn cylindrical crystal by using a supporting lining plate when the cutting is close to ending until the cutting is finished.
Further, in the step (6), the lining plate is separated from the crystal material by adopting a method of heating to melt or dissolving the binder by an organic solvent.
Advantageous effects
The rounding processing method of the edge high-stress hard and brittle semiconductor material comprises the steps of firstly, partially cutting an edge stress region by using a diamond single wire cutting machine, and then, completely cutting the residual edge stress region by using a diamond curve cutting machine to realize rapid and low-loss cutting; the method has the advantages of short processing time, high speed, low cost and small processing loss, the roughness of the edge of the cut material is less than 50 mu m, the processed waste is complete and has no cracks, and the method can be used for the second time and is suitable for processing hard and brittle semiconductor materials such as silicon carbide, gallium arsenide, gallium nitride, aluminum nitride and the like.
Drawings
FIG. 1 is a schematic diagram of a bonding mode of a lining plate and a crystal; 1. crystal, 2. Lining board;
FIG. 2 is a front view of the mounting of the liner-crystal combination on a diamond single wire cutting machine table; 1. crystal, lining board, fixing block, diamond single wire cutting machine workbench and fastening bolt;
FIG. 3 is a top plan view of the mounting of the liner-crystal combination on a diamond single wire cutting machine table; 1. crystal, lining board, fixing block, diamond single wire cutting machine workbench and fastening bolt;
FIG. 4 is a schematic diagram of the single wire cut and curvilinear cut trajectories of example 1; 6. cutting tracks of the diamond single-wire cutting machine, and 7, cutting tracks of the diamond curve cutting machine;
FIG. 5 is a top view of the crystal and liner of example 1; 1. crystal, 2, lining board, 8, knife-in edge;
FIG. 6 is a diagram showing the manner in which the crystal and liner of example 1 are held on the table of a diamond curve cutter; 1. crystal, lining board, fastening pressing block, fastening bolt and diamond curve cutting machine workbench;
FIG. 7 is a crystal diagram after cutting in example 1;
FIG. 8 is a graph of the edge of the crystal after cutting in example 1;
FIG. 9 is a schematic view of the track of the cutting line of example 2; 11. cutting track of diamond single wire cutting machine, 12. Cutting track of diamond curve cutting machine.
Detailed Description
The above-described matters of the present invention will be described in further detail by way of examples, but it should not be construed that the scope of the above-described subject matter of the present invention is limited to the following examples, and all techniques realized based on the above-described matters of the present invention are within the scope of the present invention.
Example 1
(1) Bonding: fig. 1 is a schematic diagram of bonding mode of a lining plate and crystals, fig. 2 is a front view of a fixing mode of a lining plate-material combination on a workbench of a diamond single wire cutting machine, and fig. 3 is a top view of a clamping mode of the lining plate on the workbench of the diamond single wire cutting machine; as shown in fig. 1-3, silicon carbide crystal 1 is adhered to a lining plate 2 made of glass material by solid wax, and the other surface of the lining plate 2 is fixed on a fixed block 3 made of aluminum alloy material;
(2) Fixing: fixing the crystal material bonded in the step (1) on a workbench 5 of a diamond single wire cutting machine, wherein the fixing method is that a fastening bolt 4 is extruded and fixed;
(3) Single wire cutting: setting technological parameters of a diamond single wire cutting machine, selecting a diamond cutting wire with the diameter of 0.35 mm, setting the running speed of the cutting wire to be 5 m/s, the cutting speed to be 0.83 mu m/s, the cutting stroke to be larger than the sum of the thickness of the material and the thickness of the lining plate to be 1mm, the cylinder air pressure of a cutting wire tensioning wheel to be 0.15MPa, and the flow rate of cooling liquid to be 0.5L/min, cutting the bonded material, wherein the cutting track 6 of the diamond single wire cutting machine is as shown in fig. 4, the length of a single wire cutting track line is 12cm, and the edge stress area is partially cut from the position of the round surface of the material close to the circumferential chord;
(4) Transferring and fixing materials: taking down the single-wire cut material in the step (3), separating the fixed block 3, the crystal 1 and the lining plate 2, fixing the crystal 1 on the new lining plate 2 by using solid wax temporary adhesive again, fixing the crystal 1 and the lining plate 2 on a diamond curve cutting machine in a top view shown in fig. 5, clamping the crystal 1 and the lining plate 2 on a diamond curve cutting machine workbench in a clamping manner shown in fig. 6, fixing the crystal 1 and the lining plate 2 on the diamond curve cutting machine workbench 10 by adopting a fastening pressing block 9 and a fastening bolt 5 again, and aligning the crystal 1 and the lining plate 2 into a knife edge 8;
(5) Curve cutting: drawing a cutting track on a control interface of a diamond curve cutting machine according to the aligned cutting edge 8 position during rotation fixation, establishing a cutting task, setting technological parameters of the diamond curve cutting machine, setting the diameter of a cutting line selected by the diamond curve cutting machine to be 0.35 mm, setting the running speed of the cutting line to be 15 m/s, the cutting speed to be 1 mu m/s, the cutting deflection to be outwards deflected, the air pressure of a cylinder of a cutting line tensioning wheel to be 0.14 MPa, the flow rate of cooling liquid to be 0.7L/min, performing curve cutting on the fixed material, and cutting a residual stress area from a vertical bisector position vertical to a single line cutting section by using a circular track line, wherein the cutting track 7 of the diamond curve cutting machine is shown in figure 4;
(6) And (3) supporting: when cutting is close to ending, in order to avoid material fracture caused by overlarge material gravity, supporting the drawn cylindrical crystal by using a supporting lining plate until the cutting is finished;
(7) And (6) after cutting, removing the material, heating the lining plate-material combination by using a large-size flat plate heating table, separating the lining plate and the material combination to finish rounding of the edge high-stress hard and brittle semiconductor material, wherein a crystal diagram after cutting is shown in fig. 7, and the edge of the crystal after cutting is shown in fig. 8.
Example 2
(1) Bonding: as shown in fig. 1-3, a silicon carbide crystal 1 of a high-stress hard and brittle semiconductor material with an edge to be treated is bonded on a lining plate 2 made of glass material by using a solid wax temporary adhesive, and the lining plate is fixed on a fixed block 3 made of aluminum alloy material;
(2) Fixing: fixing the crystal material bonded in the step (1) on a workbench 5 of a diamond single wire cutting machine, wherein the fixing method is that a fastening bolt 4 is extruded and fixed;
(3) Single wire cutting: setting technological parameters of a diamond single wire cutting machine, selecting a diamond cutting wire with the diameter of 0.35 mm, setting the running speed of the cutting wire to be 5 m/s, the cutting speed to be 0.83 mu m/s, the cutting stroke to be larger than the sum of the thickness of the material and the thickness of a lining plate to be 1mm, the cylinder air pressure of a cutting wire tensioning wheel to be 0.15 MPa, and the flow rate of cooling liquid to be 0.5L/min, cutting the bonded material, cutting a cutting track 11 of the diamond single wire cutting machine, and cutting an edge stress area from a part of a round surface of the material, which is close to a circumferential chord, wherein the single wire cutting wire is 9cm;
(4) Transferring and fixing materials: taking down the material cut by the single wire in the step (3), separating the fixed block 3, the crystal 1 and the lining plate 2, fixing the fixed block on the new glass lining plate 2 by using a solid wax temporary adhesive again, fixing the crystal 1 and the lining plate 2 on a diamond curve cutting machine in a top view shown in fig. 5, clamping the crystal 1 and the lining plate 2 on a diamond curve cutting machine workbench in a clamping manner shown in fig. 6, fixing the crystal 1 and the lining plate 2 on the diamond curve cutting machine workbench 10 by adopting a fastening pressing block 9 and a fastening bolt 5 again, and aligning the crystal 1 and the lining plate 2 into a knife edge 8;
(5) Curve cutting: drawing a cutting track on a control interface of a diamond curve cutting machine according to the aligned cutting edge 8 position during rotation fixation, establishing a cutting task, setting technological parameters of the diamond curve cutting machine, setting the diameter of a cutting line selected by the diamond curve cutting machine to be 0.35 mm, setting the running speed of the cutting line to be 15 m/s, the cutting speed to be 1 mu m/s, the cutting deflection to deflect outwards, the air pressure of a cylinder of a cutting line tensioning wheel to be 0.14 MPa, the flow rate of cooling liquid to be 0.7L/min, performing curve cutting on the fixed material, cutting 15 mm from a vertical bisector position vertical to a single-line cutting section according to the direction of the diameter to the circle center, and cutting a residual stress area by using a circular track line, wherein the cutting track 12 of the diamond curve cutting machine is shown in fig. 9;
(6) And (3) supporting: when cutting is close to ending, in order to avoid material fracture caused by overlarge material gravity, supporting the drawn cylindrical crystal by using a supporting lining plate until the cutting is finished;
(7) And (6) taking down the material after cutting, heating the lining plate-material combination body by using a large-size flat plate heating table, separating the lining plate from the material, and finishing rounding of the edge high-stress hard and brittle semiconductor material.
Claims (10)
1. A rounding processing method of a high-stress hard and brittle semiconductor material at the edge is characterized by comprising the following steps:
(1) Bonding: bonding the edge high-stress hard and brittle semiconductor material crystal to be treated on a lining plate, and fixing the other surface of the lining plate on a fixed block;
(2) Fixing: fixing the bonded material in the step (1) on a workbench of a diamond single wire cutting machine;
(3) Single wire cutting: setting technological parameters of a diamond single wire cutting machine, cutting the bonded material, and partially cutting an edge stress area from a position, close to a circumferential chord, of the round surface of the material;
(4) Transferring and fixing materials: taking down the material cut by the single wire in the step (3), separating the fixed block, the crystal and the lining plate, secondarily bonding the crystal and the lining plate firmly, fixing the crystal and the lining plate on a workbench of a diamond curve cutting machine, and aligning the cutting wire to a cutting edge;
(5) Curve cutting: drawing a cutting track on a control interface of a diamond curve cutting machine according to the aligned knife-entering edge position during rotation fixation, establishing a cutting task, setting technological parameters of the diamond curve cutting machine, performing curve cutting on the fixed material, and cutting off a residual stress area along a circular track line from a perpendicular bisector position perpendicular to a single-line cutting section along the diameter direction to the circle center direction;
(6) And (5) after cutting, removing the material, separating the lining plate from the material, and finishing rounding the edge high-stress hard and brittle semiconductor material.
2. The method for rounding the edge high-stress hard and brittle semiconductor material according to claim 1, wherein the edge high-stress hard and brittle semiconductor material to be treated is one of silicon carbide, gallium arsenide, gallium nitride and aluminum nitride crystals.
3. The rounding process of the edge-highly stressed and brittle semiconductor material according to claim 1, wherein the bonding agent used in the step (1) is solid wax or hot melt adhesive; the lining plate is made of glass or ceramic; the fixed block is made of metal or ceramic.
4. A rounding process of edge-highly stressed, brittle semiconductor materials according to claim 3, characterized in that the binder used in the bonding in step (1) is a solid wax; the lining plate is made of glass; the fixed block is made of aluminum alloy.
5. The method for rounding the edge high-stress hard and brittle semiconductor material according to claim 1, wherein the fixing method in the step (2) is bolt and nut fixing, bolt fastening pressing block fixing or mortise and tenon structure fastening fixing after the lining plate is punched.
6. The method for rounding edge highly stressed and brittle semiconductor material according to claim 1, wherein the parameters of single wire cutting in step (3) are set as follows: the diameter of the diamond cutting line is 0.02-0.5 mm, the cutting line stroke is slightly larger than the stroke required by actual cutting, the cutting speed is 0.05-20 mu m/s, and the running speed of the cutting line is 3-30 m/s.
7. The method for rounding the edge high-stress brittle semiconductor material according to claim 1, wherein in the step (5), the diamond curve cutting machine cuts a circular trace line directly from the cutting edge or cuts a notch from the cutting edge to the center of a circle along the diameter direction, and then cuts the circular trace line, and the length of the notch is 0.1-15 mm; the cut is biased inwardly, along the exact center of the track, or outwardly with respect to the circumferential track.
8. The method for rounding the edge highly stressed and brittle semiconductor material according to claim 1, wherein the diamond cutting line in the step (5) has a diameter of 0.02-0.5 mm, a cutting speed of 0.05-10 μm/s and a cutting line running speed of 3-30 m/s.
9. The method of rounding an edge highly stressed and brittle semiconductor material according to claim 1, wherein step (5) supports the drawn cylindrical crystal with a support liner as the cut approaches the end of the cut.
10. The method of rounding an edge-highly stressed, brittle semiconductor material according to claim 1, wherein step (6) separates the backing plate from the crystalline material by melting with heat or dissolving the binder with an organic solvent.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410951584.4A CN118559900A (en) | 2024-07-16 | 2024-07-16 | Rounding processing method for edge high-stress hard and brittle semiconductor material |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410951584.4A CN118559900A (en) | 2024-07-16 | 2024-07-16 | Rounding processing method for edge high-stress hard and brittle semiconductor material |
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| CN118559900A true CN118559900A (en) | 2024-08-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202410951584.4A Pending CN118559900A (en) | 2024-07-16 | 2024-07-16 | Rounding processing method for edge high-stress hard and brittle semiconductor material |
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| Country | Link |
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| CN (1) | CN118559900A (en) |
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- 2024-07-16 CN CN202410951584.4A patent/CN118559900A/en active Pending
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