CN118496162A

CN118496162A - Precursor, amphoteric ion, perovskite light absorption layer, preparation method, perovskite solar cell and electric equipment

Info

Publication number: CN118496162A
Application number: CN202310127007.9A
Authority: CN
Inventors: 贾博宇; 梁伟风; 陈国栋; 郭永胜
Original assignee: Ningde Times Future Energy Shanghai Research Institute Co ltd; Contemporary Amperex Technology Co Ltd
Current assignee: Ningde Times Future Energy Shanghai Research Institute Co ltd; Contemporary Amperex Technology Co Ltd
Priority date: 2023-02-16
Filing date: 2023-02-16
Publication date: 2024-08-16

Abstract

The application provides a precursor, zwitterions, a perovskite light absorption layer, a preparation method, a perovskite solar cell and electric equipment, wherein the perovskite light absorption layer comprises a perovskite layer and zwitterions; the amphoteric ions include cationic groups and anionic groups; wherein the cationic group comprises a nitrogen-containing heterocycle; anionic groups include carboxylate and/or sulfonate groups. According to the perovskite light absorption layer containing single-molecule zwitterions, functional groups capable of passivating various perovskite layer defects are introduced, various defects such as anion vacancies, lead ion vacancies and A-site cation vacancies which may occur in the perovskite layer are passivated, and/or interface defects between the perovskite layer and the charge transmission layer are passivated, so that the photoelectric conversion efficiency and stability of the perovskite solar cell are improved.

Description

Precursor, amphoteric ion, perovskite light absorption layer, preparation method, perovskite solar cell and electric equipment

Technical Field

The invention relates to the technical field of solar cell devices, in particular to a precursor, a zwitterionic perovskite light absorption layer, a preparation method, a perovskite solar cell and electric equipment.

Background

This section provides merely background information related to the application, which is not necessarily prior art.

Perovskite solar cells have many advantages such as good optical absorption coefficient, luminous quantum efficiency, higher defect state tolerance, long-range charge transport, low-cost manufacturing process and the like, and are widely focused on, so that the perovskite solar cells have strong application potential. Currently, the highest photoelectric conversion efficiency of a single-junction perovskite solar cell is recorded to be 25.2%, the photoelectric conversion efficiency of a perovskite solar cell and a single-crystal silicon laminated cell is recorded to be 29.15%, and the commercialization standard is achieved.

Disclosure of Invention

The application mainly solves the technical problem that the passivation technology for simultaneously passivating defects of three or more perovskite light absorption layers by one means is fresh at present.

In order to solve the technical problems, the application adopts a technical scheme that: in a first aspect, the present application provides a perovskite light absorbing layer comprising a perovskite layer and a zwitterionic; the amphoteric ions include cationic groups and anionic groups; wherein the cationic group comprises a nitrogen-containing heterocycle; anionic groups include carboxylate and/or sulfonate groups.

In one or more embodiments of the present application, by providing a perovskite light absorbing layer including single-molecule zwitterions, functional groups capable of passivating various perovskite layer defects are introduced, various defects such as anion vacancies, lead ion vacancies, a-site cation vacancies, and/or interface defects between the perovskite layer and the charge transport layer, which may occur in the perovskite layer, are passivated, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

In some embodiments, the cationic group further comprises a substituent group attached to a substitution position of the nitrogen-containing heterocycle; the chemical formula of the substituent group comprisesWherein L comprises a carbon chain with a main chain atom number of any one of 1-10 or a carbon chain containing hetero atoms, and the hetero atoms comprise one or more of O, S, N, si; m comprises an alkali metal element or NR ₄; r is an alkyl group having 1 to 5 carbon atoms.

In one or more embodiments of the present application, the cationic groups are linked to a substituent group at the nitrogen-containing heterocycle to promote the radical radius of the cationic groups, so that the cationic groups tend to be distributed at the perovskite grain boundaries, supplement the anion vacancies of the perovskite, reduce the defects of the perovskite layer, and promote the crystal quality of the perovskite layer.

In one or more embodiments of the present application, the cationic groups enhance the radical radius of the cationic groups by attaching a substituent group to the nitrogen-containing heterocycle, enhance the ability to passivate the interfacial defects between the perovskite layer and the charge transport layer, and reduce the defect density of the perovskite layer.

In some embodiments, the chemical formula of the anionic group includesWherein L comprises a carbon chain with a main chain atom number of any one of 1-10 or a carbon chain containing hetero atoms, and the hetero atoms comprise one or more of O, S, N, si.

In one or more embodiments of the present application, the radical radius of the anionic groups is increased by anionic groups comprising carbon chains or carbon chains comprising heteroatoms, such that the anionic groups tend to be distributed at perovskite grain boundaries, supplementing various defects of perovskite such as lead ion vacancies, a-site cation vacancies, etc., and improving the crystal quality of perovskite layers.

In one or more embodiments of the application, the anionic groups are promoted by the anionic groups comprising carbon chains or carbon chains comprising heteroatoms, thereby promoting the radical radius of the anionic groups, promoting the ability to passivate interfacial defects between the perovskite layer and the charge transport layer, and reducing the defect density of the perovskite layer.

In some embodiments, the chemical formula of the zwitterionic includes:

One or more of the following;

Wherein the chemical formula of Z comprises Wherein L comprises a carbon chain having any one of 1 to 10 main chain atoms or a carbon chain containing a hetero atom, the hetero atom comprises one or more of O, S, N, si, M comprises an alkali metal element or NR ₄, and R comprises an alkyl group having any one of 1 to 5 carbon atoms; the chemical formula of Y includes

In one or more embodiments of the present application, the zwitterionic species of the above chemical formula is used to participate in the perovskite light absorption layer formed, and various defects such as anion vacancies, lead ion vacancies, a-site cation vacancies, etc. may occur in the perovskite layer, and/or interface defects between the perovskite layer and the charge transport layer are passivated, which is beneficial to improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

In some embodiments, the chemical formula of the zwitterionic includes:

One or more of the following.

In one or more embodiments of the present application, the above-described specific zwitterions are provided to participate in the formation of the perovskite light-absorbing layer, to passivate various defects such as anion vacancies, lead ion vacancies, a-site cation vacancies, etc. that may occur in the perovskite layer, and/or interface defects between the perovskite layer and the charge transport layer, and to enhance the photoelectric conversion efficiency and stability of the perovskite solar cell.

In some embodiments, the perovskite layer has a chemical formula comprising ABX ₃ or a ₂CDX₆, wherein a comprises one or more of MA, FA, cs, rb; b comprises one or two of Pb and Sn; c comprises Ag ⁺; d comprises one or more of Bi ³⁺、Sb³⁺、In³⁺; x includes one or both of Br or I.

In one or more embodiments of the present application, a specific perovskite layer material is provided, and the perovskite light absorbing layer is formed together with the zwitterion provided by the present application, so that the photoelectric conversion efficiency and stability of the perovskite solar cell are improved by passivating various defects possibly occurring in the perovskite layer and/or passivating interface defects between the perovskite layer and the charge transport layer.

In some embodiments, the zwitterion is dispersed in the perovskite layer, or the zwitterion is coated on at least one surface of the perovskite layer, or a portion of the zwitterion is dispersed in the perovskite layer, and another portion of the zwitterion is coated on at least one surface of the perovskite layer.

In one or more embodiments of the application, the zwitterion is dispersed in the perovskite layer, and serves as a bulk passivating agent to passivate various defects such as anion vacancies, lead ion vacancies, A-site cation vacancies and the like which may occur in the perovskite layer, so that the photoelectric conversion efficiency and stability of the perovskite solar cell are improved. In one or more embodiments of the application, the zwitterion is coated on at least one surface of the perovskite layer, and serves as an interface passivating agent to passivate interface defects between the perovskite layer and the charge transport layer, so that the photoelectric conversion efficiency and stability of the perovskite solar cell are improved. In one or more embodiments of the present application, a part of the zwitterion is dispersed in the perovskite layer, another part of the zwitterion is coated on at least one surface of the perovskite layer, a part of the zwitterion is used as a bulk passivating agent to passivate various defects such as anion vacancies, lead ion vacancies, a-site cation vacancies, etc. which may occur in the perovskite layer, and a part of the zwitterion is used as an interface passivating agent to passivate interface defects between the perovskite layer and the charge transport layer, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

In a second aspect, the present application provides a zwitterionic comprising a cationic group and an anionic group; wherein the cationic group comprises a nitrogen-containing heterocycle; anionic groups include carboxylate and/or sulfonate groups.

In some embodiments, the chemical formula of the zwitterionic includes:

One or more of the following;

In some embodiments, the chemical formula of the zwitterionic includes:

One or more of the following.

In a third aspect, the present application provides a precursor comprising a perovskite precursor liquid and a zwitterionic added to the perovskite precursor liquid; the perovskite precursor liquid is used for forming a perovskite layer; the zwitterion includes any of the zwitterions provided in the second aspect.

In one or more embodiments of the present application, by providing a precursor, the zwitterion is dispersed in the perovskite layer as a bulk passivating agent during the formation of the perovskite layer, so as to passivate various defects such as anion vacancies, lead ion vacancies, a-site cation vacancies, etc. which may occur in the perovskite layer, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

In some embodiments, the molar amount of the zwitterionic is 0.1% to 10% of the molar amount of the perovskite precursor solution.

In one or more embodiments of the application, it is within the scope of the application for the molar amount of any zwitterionic species that reduces perovskite layer defects and/or enhances perovskite quality to be a percentage of the molar amount of perovskite precursor solution. In one or more embodiments of the application, the molar quantity of the zwitterion is in the range of 0.1% -10% of the molar quantity of the perovskite precursor liquid, so that defects of the formed perovskite light absorbing layer are reduced, the quality is improved, and the photoelectric conversion efficiency and the stability of the perovskite solar cell are effectively improved.

In a fourth aspect, the present application provides a method for preparing a perovskite light absorbing layer, comprising: coating the precursor on the buried bottom interface to form a preform layer, and curing the preform layer; the precursor includes any of the precursors provided in the third aspect.

In one or more embodiments of the present application, by providing a method for preparing a perovskite light absorbing layer, the zwitterion is used as a bulk passivating agent in the formation process of the perovskite layer, so as to passivate various defects such as anion vacancies, lead ion vacancies, a-site cation vacancies and the like, which may occur in the perovskite layer, and improve the quality of the perovskite light absorbing layer and the performance stability of the functional layer.

In a fifth aspect, the present application provides a method for preparing a perovskite light absorbing layer, comprising:

forming a perovskite layer at the buried bottom interface; and

Forming a zwitterionic layer at the buried interface before forming the perovskite layer at the buried interface, and/or forming a zwitterionic layer at the surface of the perovskite layer after forming the perovskite layer at the buried interface;

Wherein the zwitterionic layer comprises a zwitterionic, including any of the zwitterionic provided by the second aspect.

In one or more embodiments of the present application, by providing a method for preparing a perovskite light absorbing layer, interface defects between a perovskite layer and a charge transport layer are passivated by forming a zwitterionic layer before and/or after a perovskite layer is formed at a buried interface, defect density of the perovskite layer is reduced, energy loss of a perovskite solar cell is reduced, and photoelectric conversion efficiency and stability of the perovskite solar cell are improved.

In some embodiments, the step of forming the zwitterionic layer includes coating a zwitterionic solution and annealing; wherein the zwitterionic solution includes a solvent and a zwitterionic added to the solvent.

In one or more embodiments of the application, the zwitterionic solution is provided such that the zwitterion can be uniformly and stably coated on the corresponding interface, and the annealing treatment means is provided such that the zwitterionic layer does not affect the product properties or stability of the substrate interface prior to formation and/or the primary product of the zwitterionic layer does not have its properties affected by other functional layers after formation.

In some embodiments, the solvent comprises one or more of methanol, isopropanol, ethanol, chlorobenzene.

In the present application, any solvent in which a zwitterionic is soluble is within the scope of the present application. In one or more embodiments of the present application, the solvent comprises one or more of methanol, isopropanol, ethanol, chlorobenzene, and is easily removed after the coating is completed, facilitating the formation of a stable performance zwitterionic layer.

In some embodiments, the concentration of the precursor solution is 0.1mg/mL-10mg/mL.

In the application, the concentration of any precursor liquid capable of forming the zwitterionic layer is within the protection scope of the application. In one or more embodiments of the present application, the concentration of the precursor solution is 0.1mg/mL to 10mg/mL, and the precursor solution in this concentration range is easy to form a zwitterionic layer with stable and uniform quality, and the solvent is easy to remove.

In a sixth aspect, the present application provides a perovskite solar cell comprising a perovskite light absorbing layer; wherein the perovskite light absorbing layer comprises any one of the perovskite light absorbing layers provided in the first aspect or a perovskite light absorbing layer prepared by any one of the precursors provided in the third aspect or a perovskite light absorbing layer prepared by any one of the preparation methods provided in the fourth or fifth aspects.

In one or more embodiments of the present application, there is provided a perovskite solar cell comprising any one of the perovskite light absorbing layers provided in the first to fifth aspects, which improves the photoelectric conversion efficiency and stability of the perovskite solar cell.

In a seventh aspect, the present application provides an electrical consumer comprising any one of the perovskite solar cells provided in the sixth aspect.

In one or more embodiments of the present application, the perovskite solar cell is used as a power source of the electric equipment to supply power to the electric equipment; or the perovskite solar cell can be used as an energy storage unit of the electric equipment. By way of example, the consumer may be a lighting element, a display element, a motor vehicle or the like.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments of the present application will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present application, and other drawings may be obtained according to the drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic diagram of a first structure of a perovskite light absorbing layer provided by the present application;

FIG. 2 is a schematic diagram of a second structure of a perovskite light absorbing layer provided by the present application;

FIG. 3 is a schematic diagram of a third structure of a perovskite light absorbing layer provided by the present application;

FIG. 4 is a fourth schematic structural view of a perovskite light absorbing layer provided by the present application;

fig. 5 is a schematic structural diagram of a perovskite solar cell provided by the application.

In the drawings, the drawings are not drawn to scale.

Marking:

A 100-perovskite solar cell, a 10-conductive substrate, a 20-first transmission layer, a 30-perovskite light absorption layer, a 40-second transmission layer, a 50-metal electrode, a 31-perovskite layer, a 32-zwitterionic layer, and ZI-zwitterions.

Detailed Description

The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.

The terms "first," "second," "third," and the like in this disclosure are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", and "a third" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise. All directional indications (such as up, down, left, right, front, back … …) in the embodiments of the present application are merely used to explain the relative positional relationship, movement, etc. between the components in a particular gesture (as shown in the drawings), and if the particular gesture changes, the directional indication changes accordingly. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus.

Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.

In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices, and methods may be implemented in other manners. For example, the apparatus embodiments described above are merely illustrative, e.g., the division of elements is merely a logical functional division, and there may be additional divisions of actual implementation, e.g., multiple elements or components may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be an indirect coupling or communication connection via some interfaces, devices or units, which may be in electrical, mechanical or other form.

In addition, each functional unit in the embodiments of the present application may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in software functional units.

The photoelectric conversion efficiency and stability of perovskite solar cells are key factors in determining their commercial prospects. And factors affecting the photoelectric conversion efficiency and stability of the perovskite solar cell are various. Among them, the film quality and performance stability of the perovskite light absorbing layer are important factors affecting the photoelectric conversion efficiency and stability of the perovskite solar cell.

Defects in the perovskite light absorbing layer are important reasons for affecting the film quality and performance stability. Among them, defects of the perovskite light absorbing layer include grain boundary defects of perovskite phases and interfaces, and generated ion migration. Passivation is an effective means of improving the film quality and performance stability of the perovskite light absorbing layer. Currently, there are a variety of passivation techniques for perovskite light absorbing layers that can passivate a portion of the defects of the perovskite light absorbing layer. However, there are currently few passivation techniques that can simultaneously passivate defects of three or more perovskite light absorbing layers by one means. If the various defects of the perovskite light absorbing layer are respectively passivated by various means, new defects and/or uncertain factors are easily introduced, and the film quality and performance stability of the formed perovskite light absorbing layer are difficult to ensure. Therefore, it is necessary to provide a new effective means for improving the film quality and performance stability of the perovskite light absorbing layer, so that various defects of the perovskite light absorbing layer can be passivated by a small amount of means, the film quality and performance stability of the formed perovskite light absorbing layer can be ensured, the device performance of the perovskite solar cell containing the improvement can be improved, and the commercialization prospect of the corresponding perovskite solar cell can be improved.

Therefore, in order to improve the film quality and performance stability of the perovskite light absorption layer and promote the commercialization prospect of the perovskite solar cell, the application provides a scheme for introducing zwitterions at the interface between a perovskite phase or a charge transmission layer, wherein the zwitterions are taken as passivating agents of the phase or the interface, and can introduce functional groups capable of passivating three or more defect types in a single molecule, so that the photoelectric conversion efficiency and the stability of the perovskite solar cell are cooperatively and assisted.

The technical scheme described by the embodiment of the application is suitable for precursors, zwitterions, perovskite light absorption layers, preparation methods, perovskite solar cells and electric equipment. The perovskite solar cell disclosed by the application can be used for perovskite stacked solar cells and also can be used for silicon-perovskite stacked solar cells, and the perovskite solar cell is not limited.

The present application will be described in detail with reference to the accompanying drawings and examples.

In a first aspect, the present application provides a perovskite light absorbing layer comprising a perovskite layer and a zwitterionic. The amphoteric ions include cationic groups and anionic groups. Wherein the cationic group comprises a nitrogen-containing heterocycle; anionic groups include carboxylate and/or sulfonate groups.

In the present application, the "perovskite light absorbing layer" means a core component of a perovskite solar cell for absorbing photon energy of sunlight to generate electron-hole pairs, and separating the electron-hole pairs into free electrons and holes under the action of a built-in electric field, the holes being collected by a transparent electrode through a hole transporting layer, and the electrons being collected by a metal electrode, the transparent electrode and the metal electrode being connected into a circuit to generate photocurrent. "perovskite layer" means a layered structure formed of a perovskite material, which means a material having the same crystal structure as CaTiO3, and exhibits a cubic crystal phase in a stable state, for use as a main formation material of a perovskite light absorbing layer. "zwitterionic" means an ion or substance that reacts with both hydrogen and hydroxyl ions in a solution, i.e., a dipole ion with both positive and negative charges on the same molecule. "cationic group" means a group bearing a cation. "anionic group" means a group bearing an anion. The "nitrogen-containing heterocycle" means an organic compound having a heterocyclic structure in the molecule, and six elements constituting the ring contain at least one nitrogen element in addition to carbon elements. "carboxylate" means an acid ion of the formula"Sulfonate" means an acid ion of the formula

Specifically, in one or more embodiments of the present application, the zwitterion contains a cation group containing a nitrogen-containing heterocycle for filling anion vacancies in the perovskite precursor solution, and the anion group containing carboxylate and/or sulfonate is used for filling lead ion vacancies and/or a cation vacancies in the perovskite precursor solution, so that the perovskite light absorbing layer simultaneously passivates various defects in the presence of the zwitterion, and improves the photoelectric conversion efficiency and stability of the perovskite solar cell.

Specifically, in one or more embodiments of the present application, a zwitterionic layer is formed at least at one interface where a perovskite layer contacts a charge transport layer, so as to passivate interface defects between the perovskite layer and the charge transport layer, reduce defect density of the perovskite layer, reduce energy loss of the perovskite solar cell, and improve photoelectric conversion efficiency and stability of the perovskite solar cell, thereby improving device quality of the perovskite solar cell.

In some embodiments, the cationic group further comprises a substituent group attached to a substitution site of the nitrogen-containing heterocycle. The chemical formula of the substituent group comprisesWherein L comprises a carbon chain with a main chain atom number of any one of 1-10 or a carbon chain containing hetero atoms, and the hetero atoms comprise one or more of O, S, N, si; m comprises an alkali metal element or NR ₄; r is an alkyl group having 1 to 5 carbon atoms.

In the present application, a "substituent" means a group substituted for a hydrogen atom in an organic compound, and in one or more embodiments of the present application, a substituent means a group substituted for a hydrogen atom in a nitrogen-containing heterocycle. In one or more embodiments of the application, a "substitution position" refers to the position on the nitrogen-containing heterocycle at which the substituent is attached. In one or more embodiments of the application, the "alkali metal element" includes one or more of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), francium (Fr).

In some embodiments, the chemical formula of the zwitterionic includes:

One or more of the following;

In one or more embodiments of the present application, specific formulas for some of the zwitterions are provided, in which the nitrogen-containing heterocycle may be a five-membered nitrogen-containing heterocycle, a six-membered nitrogen-containing heterocycle, a benzo-five-membered nitrogen-containing heterocycle, or a benzo-six-membered nitrogen-containing heterocycle. In one or more embodiments of the present application, the number of nitrogen elements in the nitrogen-containing heterocycle may be one, two, or three. In one or two embodiments of the present application, when there are two nitrogen elements in the nitrogen-containing heterocycle, the two nitrogen elements may be disposed in ortho-position, in meta-position, or in para-position. In one or more embodiments of the application, the nitrogen-containing heterocycle may further include elemental sulfur. In one or more embodiments of the present application, the nitrogen-containing heterocycle may include one sulfur element and one nitrogen element, and may further include one sulfur element and two nitrogen elements. In one or more embodiments of the present application, when the nitrogen-containing heterocycle includes one sulfur element and one nitrogen element, the sulfur element and the nitrogen element may be disposed in ortho-position, and may be disposed in meta-position. In one or more embodiments of the present application, when the nitrogen-containing heterocycle includes one sulfur element and two nitrogen elements, the sulfur element may be disposed ortho to both nitrogen elements, ortho to one nitrogen element, meta to the other nitrogen element, or meta to both nitrogen elements.

Specifically, in one or more embodiments of the present application, some double-stranded zwitterions are provided, namely chain Y, which is an anionic chain extending over N ⁺, and chain Z, which is a neutral ion chain extending from any neutral site, and such a design may passivate more types of perovskite defects.

In some embodiments, the chemical formula of the zwitterionic includes:

One or more of the following.

In the present application, MA represents methylamine, FA represents formamidine, cs represents cesium, rb represents rubidium, pb represents lead, sn represents tin, ag represents silver, bi represents bismuth, sb represents antimony, in represents indium, br represents bromine, and I represents iodine. Wherein, the A element in ABX ₃ or A ₂CDX₆ is the A element in the cation vacancy of the A site.

Referring to fig. 1 to 4, fig. 1 is a schematic first structure diagram of a perovskite light absorbing layer provided by the present application, fig. 2 is a schematic second structure diagram of a perovskite light absorbing layer provided by the present application, fig. 3 is a schematic third structure diagram of a perovskite light absorbing layer provided by the present application, and fig. 4 is a schematic fourth structure diagram of a perovskite light absorbing layer provided by the present application.

In some embodiments, the zwitterion ZI is dispersed in the perovskite layer 31, or the zwitterion ZI is coated on at least one surface of the perovskite layer 31, or a portion of the zwitterion ZI is dispersed in the perovskite layer 31, and another portion of the zwitterion ZI is coated on at least one surface of the perovskite layer 31.

In one or more embodiments of the application, referring to fig. 1, the perovskite light absorbing layer 30 includes a perovskite layer 31 and a zwitterionic ZI dispersed in the perovskite layer 31. The thickness of any perovskite layer 31 is within the scope of the present application. In one or more embodiments of the application, the perovskite layer 31 has a thickness of 200nm to 1000nm. The perovskite layer 31 may have a thickness of 200nm, 400nm, 600nm, 800nm or 1000nm, and may have a thickness of 300nm, 500nm, 700nm or 900nm, as desired.

In one or more embodiments of the application, referring to fig. 2, the perovskite light absorbing layer 30 includes a perovskite layer 31 and a zwitterionic layer 32 coated on one surface of the perovskite layer 31, the zwitterionic layer 32 including a zwitterionic ZI. In one or more embodiments of the application, the zwitterionic layer 32 is provided on the surface of the perovskite layer 31 remote from the buried interface. In one or more embodiments of the application, the zwitterionic layer 32 is provided on the surface of the perovskite layer 31 near the buried interface. The thickness of any zwitterionic layer 32 is within the scope of the present application. In one or more embodiments of the application, the thickness of zwitterionic layer 32 is from 1nm to 5nm. Illustratively, the thickness of the zwitterionic layer 32 may be 1nm, 2nm, 3nm, 4nm, or 5nm, and may also be 1.5nm, 2.5nm, 3.5nm, or 4.5nm, as desired.

In one or more embodiments of the application, referring to fig. 3, the perovskite light absorbing layer 30 includes a perovskite layer 31 and a zwitterionic layer 32 applied to two oppositely disposed surfaces of the perovskite layer 31, the zwitterionic layer 32 including a zwitterionic ZI.

In one or more embodiments of the application, referring to fig. 4, the perovskite light absorbing layer 30 includes a perovskite layer 31 and a zwitterionic layer 32 applied to two oppositely disposed surfaces of the perovskite layer 31, the zwitterionic layer 31 having the zwitterions ZI dispersed therein, the zwitterionic layer 32 including the zwitterions ZI. In one or more embodiments of the application, the perovskite light absorbing layer 30 includes a perovskite layer 31 and a zwitterionic layer 32 coated on one surface of the perovskite layer 31.

In the present application, "the zwitterions ZI are dispersed in the perovskite layer 31" means that the improvement of the zwitterion ZI to the perovskite light absorbing layer 30 is during the formation of the perovskite layer 31. "zwitterionic ZI coated on at least one surface of the perovskite layer 31" means that the zwitterionic ZI modifies the perovskite light absorbing layer 30 before and/or after the perovskite layer 31 is formed. "a portion of the zwitterionic ZI is dispersed in the perovskite layer 31, another portion of the zwitterionic ZI is coated on at least one surface of the perovskite layer 31" means that the improvement of the zwitterionic ZI with respect to the perovskite light absorbing layer 30 includes both during formation of the perovskite layer 31 and before and/or after formation of the perovskite layer 31.

In one or more embodiments of the present application, the zwitterion ZI is dispersed in the perovskite layer 31, and serves as a bulk passivating agent to passivate various defects such as anion vacancies, lead ion vacancies, a-site cation vacancies, etc. which may occur in the perovskite layer 31, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell. In one or more embodiments of the present application, the zwitterionic ZI is coated on at least one surface of the perovskite layer 31, and the zwitterionic ZI serves as an interface passivating agent to passivate the interface defect between the perovskite layer 31 and the charge transport layer, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell. In one or more embodiments of the present application, a part of the zwitterion ZI is dispersed in the perovskite layer 31, another part of the zwitterion ZI is coated on at least one surface of the perovskite layer 31, a part of the zwitterion ZI is used as a bulk passivating agent to passivate various defects such as anion vacancies, lead ion vacancies, a-site cation vacancies and the like which may occur in the perovskite layer 31, and a part of the zwitterion ZI is used as an interface passivating agent to passivate interface defects between the perovskite layer 31 and the charge transport layer, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

In some embodiments, the cationic group further comprises a substituent group attached to a substitution position of the nitrogen-containing heterocycle; the chemical formula of the substituent group comprisesWherein L comprises a carbon chain with a main chain atom number of any one of 1-10 or a carbon chain containing hetero atoms, and the hetero atoms comprise one or more of O, S, N, si; m is an alkali metal element or NR ₄; r is an alkyl group having 1 to 5 carbon atoms.

In some embodiments, the chemical formula of the anionic group includesWherein L is a carbon chain with a main chain atom number of 1-10 or a carbon chain containing hetero atoms, and the hetero atoms comprise one or more of O, S, N, si.

In some embodiments, the chemical formula of the zwitterionic includes:

One or more of the following;

In some embodiments, the chemical formula of the zwitterionic includes:

One or more of the following.

In a third aspect, the present application provides a precursor comprising a perovskite precursor liquid and a zwitterionic ZI added to the perovskite precursor liquid. The perovskite precursor liquid is used to form the perovskite layer 31. The zwitterions ZI comprise cationic groups and anionic groups. Wherein the cationic group comprises a nitrogen-containing heterocycle; anionic groups include carboxylate and/or sulfonate groups.

In one or more embodiments of the application, a "precursor" is a precursor product that results in the perovskite light absorbing layer 30. "perovskite precursor liquid" means a precursor raw material for forming the perovskite layer 31.

In one or more embodiments of the present application, by providing a precursor, the zwitterion ZI is dispersed in the perovskite layer 31 as a bulk passivating agent during the formation of the perovskite layer 31, so as to passivate various defects such as anion vacancies, lead ion vacancies, a-site cation vacancies, etc. which may occur in the perovskite layer 31, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

In some embodiments, the chemical formula of the zwitterion ZI comprises:

One or more of the following;

In some embodiments, the chemical formula of the zwitterion ZI comprises:

One or more of the following.

In some embodiments, the molar amount of the zwitterionic ZI is 0.1% to 10% of the molar amount of the perovskite precursor solution.

In one or more embodiments of the present application, it is within the scope of the present application to include any molar amount of the zwitterionic ZI that reduces defects in the perovskite layer 31 and/or enhances the quality of the perovskite as a percentage of the molar amount of the perovskite precursor solution. In one or more embodiments of the present application, the molar amount of the zwitterion ZI is in the range of 0.1% -10% of the molar amount of the perovskite precursor solution, so that defects of the formed perovskite light absorbing layer 30 are reduced, quality is improved, and photoelectric conversion efficiency and stability of the perovskite solar cell are effectively improved.

Illustratively, the molar amount of the zwitterion ZI is 0.1%, 1%, 2%, 5%, 10%, and may be 3%, 4%, 6%, 7%, 8%, 9% of the molar amount of the perovskite precursor solution, and may be appropriately set as needed.

In a fourth aspect, the present application provides a method of preparing a perovskite light absorbing layer 30, comprising: coating the precursor on the buried bottom interface to form a preform layer, and curing the preform layer; the precursor includes any of the precursors provided in the third aspect.

In the present application, "buried interface" means a support structure forming the perovskite light absorbing layer 30. In one or more embodiments of the application, the buried bottom interface may be a transparent electrode or an electron transport layer or a hole transport layer. "preform layer" means an intermediate product in the process of forming the perovskite light absorbing layer 30. "curing" refers to the process of converting a material from a non-solid state to a solid state. In one or more embodiments of the application, the curing process may be an annealing process or a baking process. Wherein, the technological parameters of the annealing treatment are as follows: heat preservation is carried out for 10min to 30min under the temperature condition of 60 ℃ to 200 ℃.

In one or more embodiments of the present application, by providing a method for preparing the perovskite light absorbing layer 30, the zwitterionic ZI acts as a bulk passivating agent to passivate various defects such as anion vacancies, lead ion vacancies, a-site cation vacancies, etc. which may occur in the perovskite layer 31 during the formation of the perovskite layer 31, thereby improving the quality of the perovskite light absorbing layer 30 and the performance stability of the functional layer.

In a fifth aspect, the present application provides a method of preparing a perovskite light absorbing layer 30, comprising:

Forming a perovskite layer 31 at the buried interface; and forming a zwitterionic layer 32 at the buried interface before the perovskite layer 31 is formed at the buried interface, and/or forming a zwitterionic layer 32 at the surface of the perovskite layer 31 after the perovskite layer 31 is formed at the buried interface; wherein zwitterionic layer 32 comprises a zwitterionic ZI comprising a cationic group and an anionic group; wherein the cationic group comprises a nitrogen-containing heterocycle; anionic groups include carboxylate and/or sulfonate groups.

In one or more embodiments of the present application, the perovskite light absorbing layer 30 formed includes a perovskite layer 31 and at least one zwitterionic layer 32, the zwitterionic layer 32 may be formed before the perovskite layer 31 is formed, after the perovskite layer 31 is formed, or both before and after the perovskite layer 31 is formed.

In one or more embodiments of the present application, by providing a method for preparing the perovskite light absorbing layer 30, by forming the zwitterionic layer 32 before and/or after the perovskite layer 31 is formed at the buried interface, the interface defect between the perovskite layer 31 and the charge transport layer is passivated, the defect density of the perovskite layer 31 is reduced, the energy loss of the perovskite solar cell is reduced, and the photoelectric conversion efficiency and stability of the perovskite solar cell are improved.

In some embodiments, the step of forming the zwitterionic layer 32 includes coating a zwitterionic solution and annealing; wherein the zwitterionic solution comprises a solvent and a zwitterionic ZI added to the solvent.

In the present application, the "zwitterionic solution" means a liquid containing the zwitterion ZI as a solute. "solvent" means a liquid that dissolves the zwitterion ZI. In one or more embodiments of the application, "coating" may take the form of spin coating, spray coating, knife coating, slot coating, or roll-to-roll printing. In one or more embodiments of the present application, forming the zwitterionic layer 32 on the surface of the perovskite layer 31 after the formation of the perovskite layer 31 at the buried interface requires annealing the perovskite layer 31 after the formation of the perovskite layer 31 and before the formation of the zwitterionic layer 32 to stabilize the performance of the perovskite layer 31 and reduce the disturbance of the zwitterionic layer 32 to the perovskite layer 31 during formation. In one or more embodiments of the present application, the formation of the zwitterionic layer 32 at the buried interface prior to the formation of the perovskite layer 31 at the buried interface requires annealing or vacuum heat treatment of the zwitterionic layer 32 after the zwitterionic layer 32 is formed and prior to the formation of the perovskite layer 31. In one or more embodiments of the application, the process parameters for annealing are: heat preservation is carried out for 10min to 30min under the temperature condition of 60 ℃ to 200 ℃. Illustratively, the annealing temperature may be 60 ℃, 130 ℃, 165 ℃, 200 ℃, and 95 ℃,150 ℃, 180 ℃, as desired. For example, the annealing time may be 10min, 20min, 30min, or 15min, 25min, and may be set reasonably according to the requirement. In one or more embodiments of the application, the process parameters of the vacuum heat treatment are: heat preservation is carried out for 10min to 60min under the temperature condition of 60 ℃ to 120 ℃. For example, the temperature of the vacuum heat treatment may be 60 ℃, 75 ℃, 90 ℃, 105 ℃, 120 ℃, or 70 ℃, 80 ℃,100 ℃, 110 ℃, as appropriate. For example, the time of the vacuum heat treatment can be 10min, 20min, 30min, 40min, 50min, 60min, and can also be 15min, 25min, 35min, 45min, 55min, which are reasonably set according to the needs.

In one or more embodiments of the present application, the zwitterionic ZI may be uniformly and stably coated on the corresponding interface by providing a zwitterionic solution, the zwitterionic layer 32 may be formed without affecting the product properties or stability of the substrate interface prior to formation, and/or the primary product of the zwitterionic layer 32 may be formed without affecting the properties of other functional layers after formation by providing an annealing treatment.

In some embodiments, the chemical formula of the zwitterion ZI comprises:

One or more of the following;

In some embodiments, the chemical formula of the zwitterion ZI comprises:

One or more of the following.

In the present application, any solvent in which the zwitterion ZI is soluble is within the scope of the present application. In one or more embodiments of the present application, the solvent comprises one or more of methanol, isopropanol, ethanol, chlorobenzene, and is easily removed after coating is completed to facilitate the formation of a stable performance zwitterionic layer 32 of the zwitterion ZI.

In the present application, the concentration of any precursor solution that can form the zwitterionic layer 32 is within the scope of the present application. In one or more embodiments of the application, the concentration of the precursor solution is 0.1mg/mL-10mg/mL, and the precursor solution in this concentration range is easy to form a zwitterionic layer 32 of stable and uniform quality, and the solvent is easy to remove. For example, the concentration of the precursor solution may be 0.1mg/mL, 2.5mg/mL, 5mg/mL, 7.5mg/mL, 10mg/mL, 1.5mg/mL, 3.5mg/mL, 6.5mg/mL, 8.5mg/mL, 9mg/mL, and may be appropriately set as needed.

In a sixth aspect, referring to fig. 1-4, the present application provides a perovskite solar cell 100 comprising a perovskite light absorbing layer 30. Wherein the perovskite light absorbing layer 30 comprises any one of the perovskite light absorbing layers 30 provided in the first aspect.

In the present application, the "perovskite solar cell 100" is a solar cell using a perovskite semiconductor as a light absorbing material, and belongs to the third generation of solar cells.

In one or more embodiments of the present application, there is provided a perovskite solar cell 100 including any one of the perovskite light absorbing layers 30 provided in the first aspect to the fifth aspect, improving the photoelectric conversion efficiency and stability of the perovskite solar cell 100.

Referring to fig. 5, fig. 5 is a schematic structural diagram of a perovskite solar cell provided by the application.

In one or more embodiments of the present application, referring to fig. 5, there is provided a perovskite solar cell 100 including a conductive substrate 10, a first transport layer 20, a perovskite light absorbing layer 30, a second transport layer 40, and a metal electrode 50, which are sequentially stacked. Wherein the first transport layer 20 includes one of an electron transport layer ETL and a hole transport layer HTL, and the second transport layer 40 includes the other of the electron transport layer ETL and the hole transport layer HTL.

In one or more embodiments of the present application, the perovskite solar cell 100 is a positive device in the case where the first transport layer 20 is an electron transport layer ETL and the second transport layer 40 is a hole transport layer HTL.

In one or more embodiments of the present application, the perovskite solar cell 100 is an inversion device in the case where the first transport layer 20 is a hole transport layer HTL and the second transport layer 40 is an electron transport layer ETL.

In the present application, the "conductive substrate 10" means an electrode having high conductivity and high visible light transmittance, and as one output terminal of the perovskite solar cell 100, for example, the conductive substrate 10 may be FTO (fluorine-doped SnO ₂ transparent conductive glass, snO ₂: F), ITO (indium tin oxide transparent conductive glass), AZO (Al-doped ZnO transparent conductive glass), BZO (B-doped ZnO transparent conductive glass) and/or IZO (indium zinc oxide transparent conductive glass). "first transport layer 20" means a functional layer for collecting electrons or holes generated by absorption of photons by the perovskite light absorbing layer 30 under light conditions. "second transport layer 40" means another functional layer for collecting electrons or holes generated by absorption of photons by the perovskite light absorbing layer 30 under light conditions. The "metal electrode 50" is an electrode made of a metal material, and is required to have high conductivity and stability as the other output terminal of the perovskite solar cell 100. In one or more embodiments of the present application, the material of the metal electrode 50 may be Ag (silver), cu (copper), C (carbon), au (gold), al (aluminum), ITO (indium tin oxide transparent conductive glass), AZO (Al doped ZnO transparent conductive glass), BZO (B doped ZnO transparent conductive glass), and/or IZO (indium zinc oxide transparent conductive glass). The "electron transport layer ETL" is also called an electron collection layer, and plays an important role in transporting electrons and blocking electron-hole recombination. In one or more embodiments of the present application, the material of the electron transport layer ETL may be at least one of the following materials and derivatives thereof or doped or passivated materials thereof: [6,6] -phenyl C ₆₁ methyl butyrate (PC ₆₁ BM), [6,6] -phenyl C ₇₁ methyl butyrate (PC ₇₁ BM), Fullerene C ₆₀, fullerene C ₇₀, tin dioxide (SnO ₂) and/or zinc oxide (ZnO). The "hole transport layer HTL" is an important component of the perovskite solar cell 100, and has a main function of collecting and transporting holes, realizing effective separation of electrons and holes, and protecting the perovskite layer 31 from oxygen and water vapor, and has an important effect on cell efficiency and stability. In one or more embodiments of the present application, the material of the hole transport layer HTL may be: PTAA (poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ]), niOx (nickel oxide, x can be 1-2), meO-2PACz ([ 2- (3, 6-dimethoxy-9H-carbazol-9-yl) ethyl ] phosphonic acid), and/or Me-4PACz (4- (3, 6-dimethyl-9H-carbazol-9-yl) butyl ] phosphoric acid).

In one or more embodiments of the present application, specific structures of perovskite solar cell 100 are provided, and perovskite light absorbing layer 30 is any one of perovskite light absorbing layers 30 provided in the first aspect to the fifth aspect, which is beneficial for improving photoelectric conversion efficiency and stability of perovskite solar cell 100.

In a seventh aspect, the present application provides a powered device comprising any one of the perovskite solar cells 100 provided in the sixth aspect.

In one or more embodiments of the present application, perovskite solar cell 100 is used as a power source for the electrical equipment; or perovskite solar cell 100 may be used as an energy storage unit for the consumer described above. By way of example, the consumer may be a lighting element, a display element, a motor vehicle or the like.

The features and capabilities of the present application are described in further detail below in connection with the examples.

The chemical formulas of the compounds No.1 to No.12 provided in the examples of the present application are shown in table 1, which are involved in the formation of perovskite solar cell 100.

TABLE 1 chemical formulas of Compounds provided by examples of the application

Example 1

A zwitterionic ZI (i.e. compound No. 3 of table 1) was prepared comprising the steps of:

Step 1, compound No. 1 (680 mg,10 mmol) was added to a three-necked flask containing dichloromethane (20 mL) and air was purged with nitrogen for 30min. Propane sultone (1.22 g,10 mmol) was then slowly added dropwise and the reaction was heated at reflux overnight. After the reaction, methylene chloride was removed, and the mixture was washed with n-hexane, filtered and dried to give compound No. 2 (1.89 g, 99%). The synthetic route for this step is shown below:

Step 2, after stirring the compound No. 2 (1.89 g,10 mmol) obtained in step 1 with NaH (400 mg,60%,10 mmol) in N, N-dimethylformamide for 30min, propane sultone (1.22 g,10 mmol) was added dropwise, and the mixture was heated to 50℃to react overnight. After the reaction, N-dimethylformamide was removed, and the reaction mixture was washed with N-hexane, filtered and dried to give compound No. 3 (3.32 g, 98%). The synthetic route for this step is shown below:

Example 2

A zwitterionic ZI (i.e. compound No. 6 of table 1) was prepared and the synthetic procedure differs from example 1 in that:

Compound No. 5 (207 mg,10 mmol) was synthesized from compound No. 4 (850 mg,10 mmol) in step 1. The synthetic route for this step is shown below:

Compound No. 6 (3.51 g,10 mmol) was synthesized from compound No. 5 (207 mg,10 mmol) in step 2. The synthetic route for this step is shown below:

Example 3

A zwitterionic ZI (i.e. compound No. 9 of table 1) was prepared and the synthetic procedure differs from example 1 in that:

Compound No. 8 (207 mg,10 mmol) was synthesized from compound No. 7 (850 mg,10 mmol) in step 1. The synthetic route for this step is shown below:

Compound No. 9 (3.51 g,10 mmol) was synthesized from compound No. 8 (207 mg,10 mmol) in step 2. The synthetic route for this step is shown below:

Example 4

A zwitterionic ZI (i.e. compound No. 12 in table 1) was prepared and the synthetic procedure differs from example 1 in that:

Compound No. 11 (207 mg,10 mmol) was synthesized from compound No. 10 (850 mg,10 mmol) in step 1. The synthetic route for this step is shown below:

Compound No. 12 (3.51 g,10 mmol) was synthesized from compound No. 11 (207 mg,10 mmol) in step 2. The synthetic route for this step is shown below:

Example 5

A perovskite solar cell 100 is prepared comprising the steps of:

Step 1, providing FTO conductive glass as a conductive substrate 10, and cleaning the conductive substrate 10;

step 2, spin-coating a methanol solution of MeO-2PACz on one surface of the conductive substrate 10 treated in step 1 at a rotation speed of 3000rpm, and annealing the resultant at 100 ℃ for 30miin to obtain a hole transport layer HTL as a first transport layer 20;

Step 3, adding a No. 3 compound into the perovskite precursor liquid to obtain a precursor; wherein the molar amount of the compound No. 3 is 5% of the molar amount of the perovskite precursor liquid, and the perovskite precursor liquid of the embodiment is formed by dissolving lead iodide, formamidine iodide, cesium iodide and lead bromide in a mixed solvent of DMF and DMSO; spin-coating the precursor on the surface of the first transmission layer 20 far away from the conductive substrate 10 at a rotation speed of 3000rpm, annealing the obtained product at 100 ℃ for 30min, and cooling to room temperature to form a perovskite light absorption layer 30;

Step 4, spin-coating PC ₆₁ BM on the surface of the perovskite light absorption layer 30 far away from the conductive substrate 10 at a rotation speed of 1500rpm, annealing the obtained product at 100 ℃ for 10min, spin-coating BCP on the surface of the PC ₆₁ BM layer far away from the conductive substrate 10 at a rotation speed of 5000rpm, and annealing the obtained product at 100 ℃ for 10min to obtain an electron transport layer ETL as a second transport layer 40;

And 5, placing the product obtained in the step 4 into an evaporator, evaporating metal Cu on the surface of the second transmission layer 40, which is far away from the conductive substrate 10, to obtain a metal electrode 50, and further obtaining the perovskite solar cell 100.

Example 6

The present embodiment provides a method of manufacturing a perovskite solar cell 100, which is different from embodiment 5 in that:

the zwitterion ZI in step 3 is compound No. 6.

The remainder was the same as in example 5.

Example 7

the zwitterion ZI in step 3 is compound No. 9.

The remainder was the same as in example 5.

Example 8

in step 3, the zwitterion ZI is compound No. 12.

The remainder was the same as in example 5.

Example 9

Step 3, dissolving lead iodide, formamidine, cesium iodide and lead bromide in a mixed solvent of DMF and DMSO to form perovskite precursor liquid; the perovskite precursor solution was spin-coated on the surface of the first transfer layer 20 remote from the conductive substrate 10 at 3000rpm, and the resultant was annealed at 100 ℃ for 30min, and cooled to room temperature, to form the perovskite layer 31. Adding a No. 3 compound into methanol to form a precursor solution; the precursor solution was spin-coated on the surface of the perovskite layer 31 remote from the conductive substrate 10 at 3000rpm, and the resulting product was annealed at 100 ℃ for 30min, cooled to room temperature, to form the zwitterionic layer 32. The perovskite layer 31 and the zwitterionic layer 32 form a perovskite light absorbing layer 30.

The remainder was the same as in example 5.

Example 10

The present embodiment provides a method of manufacturing a perovskite solar cell 100, which is different from embodiment 9 in that:

the zwitterion ZI in step 3 is compound No. 6.

The remainder was the same as in example 5.

Example 11

the zwitterion ZI in step 3 is compound No. 9.

The remainder was the same as in example 5.

Example 12

in step 3, the zwitterion ZI is compound No. 12.

The remainder was the same as in example 5.

Example 13

in the step 3, adding a No. 3 compound into methanol to form a precursor solution; the precursor solution was spin-coated on the surface of the first transfer layer 20 remote from the conductive substrate 10 at 3000rpm, and the resulting product was annealed at 100 ℃ for 30min, cooled to room temperature, to form the zwitterionic layer 32. Dissolving lead iodide, formamidine, cesium iodide and lead bromide in a mixed solvent of DMF and DMSO to form perovskite precursor liquid; the perovskite precursor solution was spin-coated on the surface of the zwitterionic layer 32 remote from the conductive substrate 10 at 3000rpm, and the resulting product was annealed at 100 ℃ for 30min, cooled to room temperature, forming the perovskite layer 31. The perovskite layer 31 and the zwitterionic layer 32 form a perovskite light absorbing layer 30.

The remainder was the same as in example 9.

Example 14

In the step 3, adding a No. 3 compound into methanol to form a precursor solution; the precursor solution was spin-coated on the surface of the first transfer layer 20 remote from the conductive substrate 10 at 3000rpm, and the resulting product was annealed at 100 ℃ for 30min, cooled to room temperature, to form the zwitterionic layer 32. Dissolving lead iodide, formamidine, cesium iodide and lead bromide in a mixed solvent of DMF and DMSO to form perovskite precursor liquid; the perovskite precursor solution was spin-coated on the surface of the zwitterionic layer 32 remote from the conductive substrate 10 at 3000rpm, and the resulting product was annealed at 100 ℃ for 30min, cooled to room temperature, forming the perovskite layer 31. The precursor solution was spin-coated on the surface of the perovskite layer 31 remote from the conductive substrate 10 at 3000rpm, and the resulting product was annealed at 100 ℃ for 30min, cooled to room temperature, to form the zwitterionic layer 32. The zwitterionic layer 32, the perovskite layer 31 and the zwitterionic layer 32 form the perovskite light absorbing layer 30.

The remainder was the same as in example 5.

Comparative example 1

This comparative example provides a method of preparing a perovskite solar cell 100, which differs from example 5 in that:

No compound No. 3 was added in step 3.

The remainder was the same as in example 5.

The perovskite solar cells 100 prepared in examples 5 to 13 and the perovskite solar cell 100 prepared in comparative example 1 were tested for photoelectric conversion efficiency, and the test results are shown in table 2.

In this experimental example, the photoelectric conversion efficiency of the perovskite solar cell 100 was tested according to IEC61215 standard, the intensity of light was corrected by using a light-edge solar simulator using a crystalline silicon solar cell to achieve a solar intensity (the solar test standard is AM 1.5), and the perovskite solar cell 100 was connected to a digital source meter, and the photoelectric conversion efficiency was measured under illumination.

Table 2 results of photoelectric conversion efficiency test of perovskite solar cell 100 prepared according to the embodiment of the present application

From the analysis of the test results obtained in Table 2, it can be seen that:

(1) Comparison of the test data according to examples 5 to 14 with the test data of comparative example 1 shows that: the perovskite solar cell 100 provided by the embodiment of the application has greatly improved photoelectric conversion efficiency and stability compared with the comparative document 1.

(2) Comparison of the test data according to examples 5 to 14 shows that: in the perovskite solar cell 100 provided by the embodiment of the application, the interface between the zwitterionic ZI passivation perovskite layer 31 and the charge transport layer and/or the interface between the zwitterionic ZI passivation perovskite layer 31 and the charge transport layer are formed, so that the photoelectric conversion efficiency and the stability of the perovskite solar cell 100 are improved.

The foregoing description is only of embodiments of the present application, and is not intended to limit the scope of the application, and all equivalent structures or equivalent processes using the descriptions and the drawings of the present application or directly or indirectly applied to other related technical fields are included in the scope of the present application.

Claims

1. A perovskite light absorbing layer comprising a perovskite layer and a zwitterionic; the amphoteric ions include cationic groups and anionic groups; wherein the cationic group comprises a nitrogen-containing heterocycle; the anionic groups include carboxylate and/or sulfonate groups.

2. The perovskite light absorbing layer of claim 1, wherein the cationic group further comprises a substituent group attached to a substitution site of the nitrogen-containing heterocycle; the chemical formula of the substituent group comprisesWherein L comprises a carbon chain with a backbone number of atoms comprising any one of 1 to 10 or a carbon chain containing heteroatoms comprising one or more of O, S, N, si; m comprises an alkali metal element or NR ₄; r is an alkyl group having 1 to 5 carbon atoms.

3. The perovskite light absorbing layer of claim 1, wherein the anionic group has a formula comprisingWherein L comprises a carbon chain with a main chain atom number of any one of 1-10 or a carbon chain containing hetero atoms, and the hetero atoms comprise one or more of O, S, N, si.

4. A perovskite light absorbing layer according to any one of claims 1 to 3, wherein the chemical formula of the zwitterionic comprises:

One or more of the following;

Wherein the chemical formula of Z comprises Wherein L comprises a carbon chain having any one of a main chain atom number of 1 to 10 or a carbon chain containing a hetero atom including one or more of O, S, N, si, M comprises an alkali metal element or NR ₄, and R comprises an alkyl group having any one of a carbon atom number of 1 to 5; the chemical formula of Y includes

5. The perovskite light absorbing layer of claim 4, wherein the zwitterionic formula comprises:

One or more of the following.

6. The perovskite light absorbing layer of claim 1, wherein the perovskite layer has a chemical formula comprising ABX ₃ or a ₂CDX₆, wherein a comprises one or more of MA, FA, cs, rb; b comprises one or two of Pb and Sn; c comprises Ag ⁺; d comprises one or more of Bi ³⁺、Sb³⁺、In³⁺; x includes one or both of Br or I.

7. The perovskite light absorbing layer of claim 1, wherein the zwitterion is dispersed in the perovskite layer, or the zwitterion is coated on at least one surface of the perovskite layer, or a portion of the zwitterion is dispersed in the perovskite layer, and another portion of the zwitterion is coated on at least one surface of the perovskite layer.

8. A zwitterionic comprising a cationic group and an anionic group; wherein the cationic group comprises a nitrogen-containing heterocycle; the anionic groups include carboxylate and/or sulfonate groups.

9. The zwitterion of claim 8, wherein the cationic group further comprises a substituent group attached to a substitution site of the nitrogen-containing heterocycle; the chemical formula of the substituent group comprisesWherein L comprises a carbon chain with a main chain atom number of any one of 1-10 or a carbon chain containing hetero atoms, and the hetero atoms comprise one or more of O, S, N, si; m comprises an alkali metal element or NR ₄; r is an alkyl group having 1 to 5 carbon atoms.

10. The zwitterion of claim 8, wherein the anionic group has a formula comprisingWherein L comprises a carbon chain with a main chain atom number of any one of 1-10 or a carbon chain containing hetero atoms, and the hetero atoms comprise one or more of O, S, N, si.

11. The zwitterion according to any one of claims 8 to 10, wherein the chemical formula of the zwitterion comprises:

One or more of the following;

12. The zwitterion of claim 11, wherein the chemical formula of the zwitterion comprises:

One or more of the following.

13. A precursor comprising a perovskite precursor liquid and a zwitterionic added to the perovskite precursor liquid; the perovskite precursor liquid is used for forming a perovskite layer; the zwitterion comprises a zwitterion according to any one of claims 8 to 12.

14. The precursor according to claim 13, wherein the molar amount of the zwitterion is 0.1-10% of the molar amount of the perovskite precursor solution.

15. A method of preparing a perovskite light absorbing layer, comprising: coating a precursor on a buried bottom interface to form a preform layer, and curing the preform layer; the precursor comprises the precursor of claim 13 or 14.

16. A method of preparing a perovskite light absorbing layer, comprising:

forming a perovskite layer at the buried bottom interface; and

Forming a zwitterionic layer on the buried interface before forming a perovskite layer on the buried interface, and/or forming a zwitterionic layer on the surface of the perovskite layer after forming a perovskite layer on the buried interface;

wherein the zwitterionic layer comprises a zwitterionic comprising a zwitterionic of any one of claims 8 to 12.

17. The method of preparing a perovskite light absorbing layer as claimed in claim 16, wherein the step of forming a zwitterionic layer comprises coating a zwitterionic solution and annealing; wherein the zwitterionic solution comprises a solvent and a zwitterionic added to the solvent.

18. The method for preparing a perovskite light-absorbing layer according to claim 17, wherein the solvent comprises one or more of methanol, isopropanol, ethanol, chlorobenzene.

19. The method of claim 17, wherein the concentration of the zwitterionic solution is 0.1mg/mL to 10mg/mL.

20. A perovskite solar cell comprising a perovskite light absorbing layer; wherein the perovskite light absorbing layer comprises the perovskite light absorbing layer of any one of claims 1 to 7.

21. An electrical consumer comprising the perovskite solar cell of claim 20.