CN118464281A - Miniature vacuum gauge and preparation method thereof - Google Patents

Abstract

The invention provides a miniature vacuum gauge structure and a preparation method thereof, wherein the structure sequentially comprises a substrate and a vacuum degree sensing film along the thickness direction; the vacuum degree sensing film sequentially comprises a first medium film, a metal film and a second medium film from bottom to top, wherein more than two first bulge structures are arranged on the surface of the first medium film facing the cavity, so that the contact area between gas and the vacuum degree sensing film is increased. The surface of the first medium film is provided with the first bulge structure, so that the specific surface area of the vacuum degree sensing film can be effectively increased, the heat transfer capacity of gas molecules under the high vacuum condition is greatly improved, the vacuum degree detection sensitivity in the high vacuum range is improved, and meanwhile, the high-vacuum degree sensing film has enough mechanical strength and the service performance is ensured; in addition, compared with the existing micro vacuum gauge, the invention can use smaller device volume and simpler preparation process to achieve high-sensitivity air pressure detection within the high vacuum degree range, and can reduce the cost of the whole device.

Description

Miniature vacuum gauge and preparation method thereof

Technical Field

The invention relates to the field of device design and manufacturing processes of micro-electromechanical systems, in particular to a micro vacuum gauge structure and a preparation method thereof.

Background

The miniature vacuum gauge has smaller size and is widely applied to vacuum degree detection of a vacuum chamber. In addition, because the preparation flow is matched with the semiconductor manufacturing process, the vacuum degree change can be monitored in real time by integrating and packaging the vacuum degree change in some Micro Electro-mechanical system (Micro Electro-MECHANICAL SYSTEMS, MEMS) vacuum devices. Such as MEMS acceleration sensors, gyroscopes, micromirrors, etc. with high-speed moving (displacement or vibration or rotation) parts. The micro vacuum gauge can also be used for real-time pressure evaluation and adjustment of vacuum devices through matching with getter, deflating agent and other materials.

On the one hand, achieving a wide range of measurements with a micro-gauge is inherently challenging. The miniature vacuum gauge is a device for representing the vacuum degree of the environment by using the gas heat transfer capability, the temperature of a thermosensitive area controlled by a heating circuit is transferred to a substrate below through the difference of the heat transfer capability of gas molecules under different vacuum degrees, and then the temperature difference is converted into electrical data through a thermistor and is output. Under high vacuum conditions, the gas heat transfer rate is much smaller than the solid heat transfer rate and the heat radiation rate of the supporting structure due to the smaller number of gas molecules, so that the gas pressure change in the vacuum range is harder to detect. For this reason, it is often desirable to increase the area of the vacuum sensing membrane and reduce the volume of the support structure, thereby increasing the proportion of gas heat transfer to the total heat dissipation. On the other hand, since micro-vacuum gauges often need to be integrated within the vacuum cavity of MEMS devices, their size is limited by the size of the vacuum cavity. The size of the vacuum sensing film of the micro vacuum gauge is increased to occupy the area of the MEMS device, so that the mechanical property of the cantilever structure is reduced, the challenge is brought to the cavity release process below the vacuum sensing film, the performance of the device is influenced, and the service life of the device is shortened.

However, the smaller specific surface area of the vacuum sensing film of the existing micro vacuum gauge leads to difficulty in improving the sensitivity of the device in the high vacuum range.

Disclosure of Invention

In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a micro vacuum gauge structure and a manufacturing method thereof, which are used for solving the problems that the sensitivity of a device is difficult to be improved in a high vacuum range due to a small specific surface area of a vacuum sensing film of the micro vacuum gauge structure in the prior art.

To achieve the above and other related objects, the present invention provides a micro vacuum gauge structure, including, in order from bottom to top in a thickness direction: a substrate and a vacuum sensing film;

the upper surface of the substrate is provided with a cavity, and the vacuum sensing film is suspended above the cavity;

the vacuum degree sensing film comprises the following components in sequence from bottom to top: the device comprises a first dielectric film, a metal film and a second dielectric film covering the metal film, wherein the surface of the first dielectric film facing the cavity is provided with more than two first bulge structures so as to increase the contact area between gas and a vacuum sensing film;

the micro vacuum gauge structure further comprises an even number of cantilever beams, one end of each cantilever beam is connected to the substrate, and the other end of each cantilever beam is connected to the vacuum degree sensing film, so that the cantilever Liang Xuanfu is above the cavity; and two ends of the metal film are electrically led out from the two cantilever beams and fixed on the substrate.

Optionally, all the first protrusions have the same structure and are uniformly arranged in an array on the first dielectric film.

Further, the first protrusion structure is cylindrical.

Further, the height of the first protruding structures is between 10nm and 200nm, the diameter of the cross section is not more than 10 mu m, and the minimum distance between every two adjacent first protruding structures is not more than 100 mu m.

Optionally, the upper surface of the second dielectric film is provided with more than two second protruding structures so as to increase the contact area of the gas and the vacuum sensing film.

Further, all the second protrusions have the same structure and are uniformly arranged in an array on the second dielectric film.

Further, the second protrusion structure is cylindrical.

Further, the height of the second protruding structures is between 10nm and 200nm, the diameter of the cross section is not more than 10 mu m, and the minimum distance between every two adjacent second protruding structures is not more than 100 mu m.

Optionally, the micro vacuum gauge structure comprises four cantilever beams, and the four cantilever beams are uniformly arranged along the circumferential direction.

Optionally, the material of the metal film includes titanium.

The invention also provides a preparation method of the micro vacuum gauge structure, which is used for preparing the micro vacuum gauge structure, and comprises the following steps:

providing a substrate, and forming a cavity on the upper surface of the substrate;

forming a sacrificial layer on the surface of the substrate and in the cavity;

patterning the sacrificial layer to form a sacrificial layer protruding structure on the surface of the sacrificial layer, wherein the sacrificial layer protruding structure is formed above the cavity;

Forming a first dielectric film on the surface of the structure;

depositing a metal material layer on the surface of the first dielectric film, and patterning the metal material layer to form the metal film and the metal electrode;

forming a second dielectric material layer on the surface of the metal material layer;

patterning the second dielectric material layer to form an electrode window penetrating the second dielectric material layer and a release window penetrating the second dielectric material layer, the metal film and the first dielectric film;

and removing the sacrificial layer based on the release window to form a cantilever beam and a vacuum sensing film.

As described above, the micro vacuum gauge structure and the preparation method thereof of the invention can effectively increase the specific surface area of the vacuum sensing film by arranging the first bulge structure on the surface of the first dielectric film of the vacuum sensing film, greatly improve the heat transfer capability of gas molecules under high vacuum condition, improve the vacuum detection sensitivity in the high vacuum range, and simultaneously have enough mechanical strength and ensure the usability; in addition, compared with the existing micro vacuum gauge, the invention can use smaller device volume and simpler preparation process to achieve high-sensitivity air pressure detection within the high vacuum degree range, and can reduce the cost of the whole device.

Drawings

The accompanying drawings, which are included to provide a further understanding of embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. It is apparent that the drawings in the following description are only some embodiments of the invention.

Fig. 1 is a schematic top view of a micro vacuum gauge according to a first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view taken along line A-A of FIG. 1; for ease of illustration, a portion of the metal film structure on the vacuum sensing film of FIG. 1 is omitted from FIG. 2.

Fig. 3 is an enlarged view showing a partial structure of the first dielectric thin film of fig. 2.

Fig. 4 to 15 are schematic cross-sectional views corresponding to steps in the manufacturing process of the micro vacuum gauge structure according to the second embodiment of the present invention, and fig. 4 to 15 are all cut along A-A in fig. 1.

Description of element reference numerals

10. Substrate board

100. Cavity cavity

11. Vacuum degree sensing film

110. First dielectric film

111. Metal film

112. Second dielectric film

113. First bump structure

12. Cantilever beam

13. Sacrificial layer

130. Sacrificial layer bump structure

14. Metal material layer

140. Metal electrode

141. Titanium layer

142. Electrode material layer

15. A second dielectric material layer

150. Electrode window

151. Release window

Detailed Description

Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.

It should be emphasized that the term "comprises/comprising" when used herein is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.

Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments in combination with or instead of the features of the other embodiments.

As described in detail in the embodiments of the present invention, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.

For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.

In the context of the present invention, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

Please refer to fig. 1 to 15. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings rather than the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.

Example 1

As described in the background, increasing the area of the vacuum sensing film is a common technique for increasing the barometric sensitivity of a micro-gauge structure in the high vacuum range. In devices with smaller vacuum sensing films, cavity release below the support film is easy to achieve, but in larger cavity structures, complete cavity release is difficult to achieve. Under the barrier of the vacuum degree sensing film, the reaction gas or liquid is difficult to enter the central area of the vacuum degree sensing film, so that an unreleased sacrificial layer is left in the central area below the vacuum degree sensing film, the adhesion between the vacuum degree sensing film and the substrate is caused, the performance of the micro vacuum gauge is reduced, and even the device is disabled. Moreover, larger size vacuum sensing membranes can increase the mechanical load of the cantilever membrane, which can easily cause collapse of the suspended structure during manufacturing and transportation. On the other hand, the increase in volume increases the difficulty of the packaging process, thereby affecting usability. Therefore, it is necessary to provide a micro vacuum gauge structure, which can effectively increase the area of the vacuum sensing film without increasing the volume of the micro vacuum gauge structure, so that the heat transfer capability of gas molecules under high vacuum condition is greatly improved, and the sensitivity of the micro vacuum gauge structure is improved.

As shown in fig. 1 and 2, this embodiment provides a micro vacuum gauge structure, which includes, in order from bottom to top along a thickness direction: substrate 10 and vacuum degree sensing film 11:

As shown in fig. 2, a cavity 100 is formed on the upper surface of the substrate 10, and the vacuum sensing film 11 is suspended above the cavity 100;

the vacuum sensing film 11 comprises, in order from bottom to top: the device comprises a first dielectric film 110, a metal film 111 and a second dielectric film 112 covering the metal film 111, wherein the surface of the first dielectric film 110 facing the cavity 100 is provided with more than two first protruding structures 113 so as to increase the contact area between gas and the vacuum sensing film 11;

As shown in fig. 1, the micro vacuum gauge structure further includes an even number of cantilever beams 12 having one end connected to the substrate 10 and the other end connected to the vacuum sensing film 11, so that the cantilever beams 12 are suspended above the cavity 100; wherein two ends of the metal film 111 are electrically led out from the two cantilever beams 12 and fixed on the substrate 10.

In this embodiment, the first protrusion structure is disposed on the surface of the first dielectric film 110 of the vacuum sensing film 11, so that the contact area between the vacuum sensing film 11 and the gas can be effectively increased, the heat transfer capability of the cavity gas can be increased, the vacuum detection sensitivity in a high vacuum range can be improved, and the mechanical strength of the metal film 111 above the first dielectric film 110 can be ensured.

As an example, the micro vacuum gauge structure is disposed on a substrate 10, and the substrate 10 may be a silicon substrate, a glass substrate, a quartz substrate, a metal cover plate in MEMS packaging, or the like.

As an example, the material of the first dielectric thin film 110 includes at least one of silicon dioxide, silicon nitride, and silicon oxynitride. The film may be a single-layer film or a multilayer film, for example, a single-layer silicon oxide film or a single-layer silicon nitride film, or a three-layer composite structure of a silicon oxide film, a silicon nitride film, and a silicon oxide film.

As an example, the material of the second dielectric thin film 112 includes at least one of silicon dioxide, silicon nitride, and silicon oxynitride. The film may be a single-layer film or a multilayer film, for example, a single-layer silicon oxide film or a single-layer silicon nitride film, or a three-layer composite structure of a silicon oxide film, a silicon nitride film, and a silicon oxide film.

As an example, all the first bump structures 113 are identical and are uniformly arranged in an array on the first dielectric thin film 110. That is, the first bump structures 113 on the first dielectric film 110 are uniformly arranged in an array, and the arrangement mode can effectively improve the heat transfer uniformity of the vacuum sensing film, thereby improving the detection accuracy of the micro vacuum gauge structure.

As another example, the first bump structure 113 is cylindrical in shape to facilitate process implementation. As shown in fig. 3, preferably, when the first bump structure 113 is cylindrical, the height L1 of the first bump structure is between 10nm and 200nm, including end points, for example, may be 10nm, 50nm, 100nm, 200nm, etc.; the cross-sectional diameter D is not greater than 10 μm, inclusive, and may be, for example, 1 μm, 3 μm, 5 μm, 7 μm, etc.; the minimum distance L2 between two adjacent first bump structures is not greater than 100 μm, including the end point values, which may be, for example, 1 μm, 10 μm, 50 μm, 100 μm, etc.

As another preferred example, the upper surface of the second dielectric film 112 is provided with two or more second bump structures (not shown in the figure), which can further increase the contact area between the vacuum sensing film 11 and the gas based on the first bump structure, thereby increasing the heat transfer capability of the cavity gas and improving the vacuum detection sensitivity in the high vacuum range. As a preferred example, all the second protrusions have the same structure and are uniformly arranged in an array on the second dielectric film 112. That is, the second bump structures on the second dielectric film 112 are uniformly arranged in an array, and the arrangement mode can further effectively improve the heat transfer uniformity of the vacuum sensing film, thereby improving the detection accuracy of the micro vacuum gauge structure. As another preferred example, the shape of the second bump structure is cylindrical so as to facilitate process implementation, and further, when the second bump structure is cylindrical, the height of the second bump structure is between 10nm and 200nm, including end point values, for example, may be 10nm, 50nm, 100nm, 200nm, and the like; the cross-sectional diameter D is not greater than 10 μm, inclusive, and may be, for example, 1 μm, 3 μm, 5 μm, 7 μm, etc.; the minimum distance L2 between two adjacent second bump structures is not greater than 100 μm, including the end point values, which may be, for example, 1 μm, 10 μm, 50 μm, 100 μm, etc.

As another example, the dimensions (shape, size, height, etc.) and the spacing between the first bump structure 113 and the second bump structure may be the same or different, and specifically set according to actual needs.

As a preferred example, the vacuum sensing film 11 is connected to the surface of the substrate 10 by four cantilever beams 12, and the four cantilever beams 12 are uniformly arranged along the circumferential direction. The arrangement mode can reduce solid heat transfer between the vacuum degree sensing film 11 and the substrate 10 on the premise of ensuring the mechanical strength of the micro vacuum gauge structure, and can improve the shape retention of the vacuum degree sensing film, thereby improving the accuracy of the vacuum degree monitoring result.

As an example, the terminal of the metal film 111 forms a metal electrode 140, one end of which is a positive electrode and the other end of which is a negative electrode, on the substrate 10. The number of the metal electrodes 140 may be an even number of 2, 4,8, or the like, and half of them are positive electrodes and half of them are negative electrodes.

As another example, when there are four cantilever beams 12, two of the cantilever beams 12 have the metal film 111, 2 electrodes are formed by extending the terminal ends of the metal film 111 onto the substrate 10, and the other two cantilever beams have no metal film, and only the first dielectric film 110 and the second dielectric film 112 are extended onto the substrate 10, so as to achieve the supporting effect on the vacuum sensing film.

As another example, the material of the metal thin film 111 is selected from simple substances of titanium, platinum, copper, tungsten, nickel, tin, or gold, or an alloy of the above metals. As a preferred example, the metal film 111 is made of titanium, which is easier to process, lower in cost, higher in resistivity, and higher in resistivity under the same resistance and temperature change, so that the sensitivity of the vacuum gauge structure is higher, and when titanium is used as the metal film 111, the terminal end of the metal film 111 extends on the substrate 10 as an adhesion layer between the metal electrode 140 and the substrate 10, so as to improve the adhesion of the metal electrode 140.

Example two

The present embodiment provides a method for manufacturing a micro vacuum gauge structure, which can be used for manufacturing the micro vacuum gauge structure according to the first embodiment, but the micro vacuum gauge structure can also be manufactured by a method other than the first embodiment, and the preferred manufacturing method is only one of the preferred manufacturing methods, and the beneficial effects of the method can be achieved by referring to the first embodiment, and the following description is omitted.

The preparation method of the present embodiment is described below with reference to the specific drawings, in which the preparation method of the present embodiment is described by taking a single-layer structure as an example of the first dielectric film and the second dielectric film, and those skilled in the art can easily think that when the first dielectric film and the second dielectric film are in a laminated structure, the stacking of the multiple-layer structure can be achieved by using the conventional process technology.

As shown in fig. 4 and 5, step S1 is first performed to provide a substrate 10, and a cavity 100 is formed on the upper surface of the substrate 10.

As an example, a substrate 10 is provided and the substrate 10 is patterned to form the cavity 100. The patterning method comprises spin coating photoresist on a substrate 10, exposing, developing, and forming a pattern to be etched on the substrate; then, liquid solvent etching or plasma etching is used to form the desired cavity 100 on the substrate; and finally removing the photoresist.

As shown in fig. 6, step S2 is performed to form a sacrificial layer 13 on the surface of the substrate 10 and in the cavity 100.

As an example, the material of the sacrificial layer 13 is one of a silicon compound, a photoresist, and a polyimide. The sacrificial layer 13 is formed by chemical vapor deposition or spin coating.

As shown in fig. 7, step S3 is performed to pattern the sacrificial layer 13 to form a sacrificial layer bump structure 130 on the surface of the sacrificial layer 13, where the sacrificial layer bump structure 130 is formed above the cavity 100. The sacrificial layer bump structure 130 is now complementary to the subsequently formed first bump structure 113.

As an example, the method of patterning the sacrificial layer 13 includes: spin coating photoresist on the surface of the structure; then exposed, developed and etched to form the desired sacrificial layer bump structure 130 on the sacrificial layer over the cavity 100; and finally removing the photoresist.

As shown in fig. 8, step S4 is performed to form a first dielectric thin film 110 on the surface of the structure. At this time, the first bump structure 113 is formed on the surface of the first dielectric film 110, which is close to the cavity 100, based on the sacrificial layer bump structure 130.

As an example, the first dielectric film 110 is formed by a deposition method, such as atmospheric pressure plasma enhanced chemical vapor deposition or low pressure chemical vapor deposition.

As shown in fig. 9 to 12, step S5 is performed to deposit a metal material layer 14 on the surface of the first dielectric film 110, and pattern the metal material layer 14 to form the metal film 111 and the metal electrode 140.

As an example, the metal material layer 14 is generally formed using a sputtering process.

As an example, a method of patterning the metal material layer includes: spin-coating photoresist on the metal material layer 14; then exposing and developing to form a pattern to be etched on the metal material layer 14; then, a plasma etching method is adopted to form a required metal film 111 and a metal electrode 140 on the metal material layer 14; and finally removing the photoresist.

Here, as shown in fig. 10, when the metal material layer 14 has a laminated structure of the titanium layer 141 and the electrode material layer 142, the electrode material layer on the vacuum sensing film needs to be removed when patterning the metal material layer 14, as shown in fig. 12.

As shown in fig. 13, step S6 is performed to form a second dielectric material layer 15 on the surface of the metal material layer 14.

As an example, the second dielectric material layer 15 is formed by a deposition method, for example, by atmospheric pressure plasma enhanced chemical vapor deposition or low pressure chemical vapor deposition.

As shown in fig. 14, step S7 is performed to pattern the second dielectric material layer 15 to form an electrode window 150 penetrating the second dielectric material layer 15, and a release window 151 penetrating the second dielectric material layer 15, the metal film 111, and the first dielectric film 110.

As shown in fig. 15, finally, step S8 is performed to remove the sacrificial layer 13 based on the release window 151, thereby forming the cantilever 12 and the vacuum sensing film 11.

As an example, the method of removing the sacrificial layer 13 includes: the resulting structure is immersed in an organic cleaning tank or placed in a plasma etching chamber, and the sacrificial layer 13 is removed by a wet or dry method to release the cavity 100.

The preparation method of the embodiment has simple process, can realize the preparation of the high-sensitivity micro vacuum gauge structure, and can effectively save the preparation cost.

In summary, the invention provides a micro vacuum gauge structure and a manufacturing method thereof, which can effectively increase the specific surface area of a vacuum sensing film by arranging a first bulge structure on the surface of a first dielectric film of the vacuum sensing film, greatly improve the heat transfer capability of gas molecules under high vacuum condition, improve the vacuum detection sensitivity in a high vacuum range, and simultaneously have enough mechanical strength and ensure the usability; in addition, compared with the existing micro vacuum gauge, the invention can use smaller device volume and simpler preparation process to achieve high-sensitivity air pressure detection within the high vacuum degree range, and can reduce the cost of the whole device. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.

The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (11)

1. The utility model provides a miniature vacuum gauge structure, its characterized in that, miniature vacuum gauge structure includes from bottom to top along thickness direction in proper order: a substrate and a vacuum sensing film;

the upper surface of the substrate is provided with a cavity, and the vacuum sensing film is suspended above the cavity;

the vacuum degree sensing film comprises the following components in sequence from bottom to top: the device comprises a first dielectric film, a metal film and a second dielectric film covering the metal film, wherein the surface of the first dielectric film facing the cavity is provided with more than two first bulge structures so as to increase the contact area between gas and a vacuum sensing film;

the micro vacuum gauge structure further comprises an even number of cantilever beams, one end of each cantilever beam is connected to the substrate, and the other end of each cantilever beam is connected to the vacuum degree sensing film, so that the cantilever Liang Xuanfu is above the cavity; and two ends of the metal film are electrically led out from the two cantilever beams and fixed on the substrate.

2. The micro vacuum gauge structure according to claim 1, wherein: all the first bulges have the same structure and are uniformly distributed on the first dielectric film in an array mode.

3. The micro vacuum gauge structure according to claim 1 or 2, wherein: the first protruding structure is cylindrical.

4. A micro vacuum gauge structure according to claim 3, wherein: the height of the first protruding structures is between 10nm and 200nm, the diameter of the cross section is not more than 10 mu m, and the minimum distance between every two adjacent first protruding structures is not more than 100 mu m.

5. The micro vacuum gauge structure according to claim 1, wherein: and more than two second bulge structures are arranged on the upper surface of the second dielectric film so as to increase the contact area of the gas and the vacuum sensing film.

6. The micro vacuum gauge structure according to claim 5, wherein: all the second bulges have the same structure and are uniformly distributed on the second dielectric film in an array mode.

7. The micro vacuum gauge structure according to claim 5 or 6, wherein: the second protruding structure is cylindrical.

8. The micro vacuum gauge structure according to claim 7, wherein: the height of the second protruding structures is between 10nm and 200nm, the diameter of the cross section is not more than 10 mu m, and the minimum distance between every two adjacent second protruding structures is not more than 100 mu m.

9. The micro vacuum gauge structure according to claim 1, wherein: the micro vacuum gauge structure comprises four cantilever beams, and the four cantilever beams are uniformly arranged along the circumferential direction.

10. The micro vacuum gauge structure according to claim 1, wherein: the material of the metal film comprises titanium.

11. A method of manufacturing a micro-gauge structure according to any one of claims 1 to 10, comprising:

providing a substrate, and forming a cavity on the upper surface of the substrate;

forming a sacrificial layer on the surface of the substrate and in the cavity;

patterning the sacrificial layer to form a sacrificial layer protruding structure on the surface of the sacrificial layer, wherein the sacrificial layer protruding structure is formed above the cavity;

Forming a first dielectric film on the surface of the structure;

depositing a metal material layer on the surface of the first dielectric film, and patterning the metal material layer to form the metal film and the metal electrode;

forming a second dielectric material layer on the surface of the metal material layer;

patterning the second dielectric material layer to form an electrode window penetrating the second dielectric material layer and a release window penetrating the second dielectric material layer, the metal film and the first dielectric film;

and removing the sacrificial layer based on the release window to form a cantilever beam and a vacuum sensing film.